JPS63239181A - Method for measuring diameter of crystal in cz furnace - Google Patents
Method for measuring diameter of crystal in cz furnaceInfo
- Publication number
- JPS63239181A JPS63239181A JP7274287A JP7274287A JPS63239181A JP S63239181 A JPS63239181 A JP S63239181A JP 7274287 A JP7274287 A JP 7274287A JP 7274287 A JP7274287 A JP 7274287A JP S63239181 A JPS63239181 A JP S63239181A
- Authority
- JP
- Japan
- Prior art keywords
- camera
- diameter
- ccd camera
- ring
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 5
- 230000004927 fusion Effects 0.000 claims abstract description 19
- 239000007788 liquid Substances 0.000 claims description 16
- 238000005259 measurement Methods 0.000 claims description 15
- 239000000155 melt Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発11は、単結晶インゴットを製造するC2炉内の
結晶直径推定方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) This issue 11 relates to a method for estimating a crystal diameter in a C2 furnace for producing a single crystal ingot.
(従来技術)
現在のCZ炉は大容量化の途を辿っており、計測器等の
装備も多くなってきている。計測器機の精度が悪いと大
容量のCZ炉であるがゆえに多大のロスが発生する。殊
に炉内における結晶直径の精度の良い把握は、歩留りを
向上させるために重要である。なお、この計測は、専ら
一次元CCDカメラを使用して結晶直径の把握を行って
いる。(Prior Art) Current CZ furnaces are on the way to increasing their capacity, and are increasingly equipped with measuring instruments and the like. If the accuracy of the measuring instruments is poor, a large amount of loss will occur because the CZ furnace has a large capacity. In particular, accurately grasping the crystal diameter in the furnace is important for improving the yield. Note that in this measurement, a one-dimensional CCD camera is exclusively used to determine the crystal diameter.
(発明が解決しようとする問題点)
しかし、これまでの結晶直径測定においては、計測精度
が不充分であり、大きな径大ロスか生じる。この計測精
度低下要因の一つに、液面位置の変動という問題がある
。つまり、Si単結晶化が進むにつれてCZ炉内の液面
位置が下って行き(CCDカメラと液面との距離が大き
くなって行き)、この結果、カメラの倍率か変化して計
測精度の低下を招いている。またワイヤ振れによってC
CDカメラと測定対象物(例えばフュージョンリング)
との相対位置か変化することにも依る。(Problems to be Solved by the Invention) However, in the conventional crystal diameter measurement, the measurement precision is insufficient and a large diameter loss occurs. One of the causes of this reduction in measurement accuracy is the problem of fluctuations in the liquid level position. In other words, as Si single crystallization progresses, the liquid level in the CZ furnace decreases (the distance between the CCD camera and the liquid surface increases), and as a result, the camera magnification changes and measurement accuracy decreases. is inviting. Also, due to wire deflection, C
CD camera and measurement target (e.g. fusion ring)
It also depends on the change in relative position.
(問題点を解決するだめの手段)
本発明は上記問題点を解決するためになされたもので、
下記技術手段を採用する。(Means for Solving the Problems) The present invention has been made to solve the above problems.
The following technical measures will be adopted.
すなわち、゛斜め上方に設置され且つ水平及び垂直方向
に移動可能な一次元CCDカメラにより結晶と融液との
境界のフュージョンリングを計測し、このフュージョン
リングの径が最大に表われる位置へ前記一次元CCDカ
メラを水平移動させ、この移動位置及び同位置における
一次元CODカメラの角度から液面高さを計測し、この
計測値に基いて一次元CCDカメラを、同カメラとフ二
一ジョシリングの距離が一定値となるように前記一次元
CCDカメラを垂直移動し、フュージョンリングの径測
定を行うことを、その特徴とする。That is, ``a one-dimensional CCD camera installed diagonally above and movable horizontally and vertically measures the fusion ring at the boundary between the crystal and the melt, and moves the primary to the position where the diameter of this fusion ring is maximized. The original CCD camera is moved horizontally, the liquid level height is measured from this movement position and the angle of the one-dimensional COD camera at the same position, and based on this measurement value, the one-dimensional CCD camera is moved between the camera and the one-dimensional COD camera. The one-dimensional CCD camera is vertically moved so that the distance becomes a constant value, and the diameter of the fusion ring is measured.
(作用)
上記技術手段に依れば、一次元CCDカメラを、フュー
ジョンリングが最大に現われる位置に移動するため、ワ
イヤ振れに甚く誤差を吸収できることになり、誤差の出
ない位置において一次元CCDカメラの位置及びその角
度から液面位置な゛測定することになり、液面の変動量
の把握が正確となり、この変動量に合わせて一次元CC
Dカメラを垂直方向に移動させることにより、一次元C
CDカメラとフュージョンリングとの距離を常に一定に
保たせることが可能となり、カメラ倍率変動を伴わない
結晶直径の推定値が得られる。(Function) According to the above technical means, since the one-dimensional CCD camera is moved to the position where the fusion ring appears to the maximum, it is possible to absorb a large error due to wire runout, and the one-dimensional CCD camera is moved to the position where the fusion ring appears to the maximum. The liquid level position is measured from the camera position and its angle, making it possible to accurately grasp the amount of fluctuation in the liquid level.
By moving the D camera in the vertical direction, one-dimensional C
It becomes possible to always keep the distance between the CD camera and the fusion ring constant, and an estimated value of the crystal diameter can be obtained without fluctuations in camera magnification.
(実施例) 以下、図面に基いて本発明を詳述する。(Example) Hereinafter, the present invention will be explained in detail based on the drawings.
第1図は本発明を実施するための設備装置の概略図であ
って、lはCZ炉、2はカーボンヒータ、3はルツボ、
4はSi融液、5はSiインゴット、6はワイヤ、7は
一次元CCDカメラ、8はパルスモータ、9はコンピュ
ータである。FIG. 1 is a schematic diagram of equipment for carrying out the present invention, where l is a CZ furnace, 2 is a carbon heater, 3 is a crucible,
4 is a Si melt, 5 is a Si ingot, 6 is a wire, 7 is a one-dimensional CCD camera, 8 is a pulse motor, and 9 is a computer.
そして上記一次元CCDカメラ7をSiインゴット(以
下「結晶」と称する。)5及びSi融液4に向け、例え
ば第2図に示すように走査線文の位置を設定すると、一
次元CCDカメラ7内のCCD素子には、各素子に対応
する炉内の輝度か反映され、第3図に示すような輝度分
布が得られる。上記輝度分布は二次元CCDカメラを用
いた場合、リング状の高輝度部分が表われるのであって
、該高輝度部分はフュージョンリングFと称せられてい
る。本発明はこのフュージョンリングFの径測定を利用
して成立する。Then, the one-dimensional CCD camera 7 is directed toward the Si ingot (hereinafter referred to as "crystal") 5 and the Si melt 4, and the position of the scanning line pattern is set, for example, as shown in FIG. The brightness inside the furnace corresponding to each element is reflected on the CCD elements inside, and a brightness distribution as shown in FIG. 3 is obtained. When a two-dimensional CCD camera is used in the above-mentioned brightness distribution, a ring-shaped high-brightness portion appears, and this high-brightness portion is called a fusion ring F. The present invention is realized using this measurement of the diameter of the fusion ring F.
まず、第4図に示すように炉の中心線に向う方向に一次
元CCDカメラ7を前後進させて繰り返し炉内をサーチ
し、一次元CCDカメラの最適位置を決める。具体的に
は、この操作はワイヤ振れに伴う一次元CCDカメラ7
の位置ずれを吸収するために行われるもので、第2図に
示すフュージョンリングFの径dか最大に表われる位置
へ一次元CCDカメラ7を第4図、第5図におけるX軸
方向に水平移動させるのであるが、何回かのデータを取
って、コンピュータ処理により最適位置を決める。First, as shown in FIG. 4, the one-dimensional CCD camera 7 is moved back and forth in the direction toward the center line of the furnace to repeatedly search the inside of the furnace to determine the optimum position of the one-dimensional CCD camera. Specifically, this operation is performed using the one-dimensional CCD camera 7 due to wire deflection.
The one-dimensional CCD camera 7 is moved horizontally in the X-axis direction in FIGS. 4 and 5 to the position where the diameter d of the fusion ring F shown in FIG. 2 is maximized. To move it, data is collected several times and the optimal position is determined through computer processing.
次に、液面位置の測定について説明する。上記した操作
によって一次元CCDカメラ7が適正位置に移動された
ならば、一次元CCDカメラ7の移動量xと一次元CC
Dカメラ7の角度αによって液面変動量Zを求める。Next, measurement of the liquid level position will be explained. If the one-dimensional CCD camera 7 is moved to the proper position by the above operation, the moving amount x of the one-dimensional CCD camera 7 and the one-dimensional CC
The amount of liquid level fluctuation Z is determined by the angle α of the D camera 7.
すなわち、第6図から明らかなように Z=Xtanα となり、その時点での液面位置か定まる。In other words, as is clear from Figure 6, Z=Xtanα Then, the liquid level position at that point is determined.
そして、このように測定された液面位置の把握により、
結晶5の径測定を行う。By understanding the liquid level position measured in this way,
Measure the diameter of crystal 5.
すなわち、上記の液面変動量2分だけ一次元CCDカメ
ラを垂直方向に移動させ一次元CCDカメラ7と液面と
の距離を一定にし、該一次元CCDカメラ7でフュージ
ョンリングの直径を測定する。That is, the one-dimensional CCD camera is moved in the vertical direction by the above-mentioned liquid level fluctuation amount of 2 minutes to keep the distance between the one-dimensional CCD camera 7 and the liquid level constant, and the diameter of the fusion ring is measured with the one-dimensional CCD camera 7. .
(発明の効果) 本発明を実施したところ、下記の効果が確認された。(Effect of the invention) When the present invention was implemented, the following effects were confirmed.
■ワイヤ振れによる計測誤差バラツキは、CCDカメラ
を繰返し前後にサーチし、カメラ最適位置を求めること
により計測誤差バラツキが減少された。■Measurement error variations due to wire deflection were reduced by repeatedly searching the CCD camera back and forth to find the optimal camera position.
■液面位置計測が回旋となり、CCDカメラと液面間距
離を一定にすることでカメラ倍率変動か減少し、第6図
に示すように従来CCDカメラによる直径計測誤差1.
hmあったバラツキか、前記■と合わせて0.4+mm
の計測精度に改善され歩留りが向上した。■The liquid level position measurement is circular, and by keeping the distance between the CCD camera and the liquid level constant, the camera magnification fluctuation is reduced, and as shown in Figure 6, the diameter measurement error by the conventional CCD camera is 1.
hm variation, 0.4+mm in combination with the above ■
The measurement accuracy has been improved and the yield rate has increased.
■計測精度の向上により従来不安定たった制御精度も安
定した。■ Improved measurement accuracy has stabilized control accuracy, which was previously unstable.
第1図は、本発明方法を実施する装置の概略図、第2図
はSiインゴットに対する一次元CODカメラの走査線
説明図、第3図はフュージョンリングの説明図、第4図
は一次元CCDカメラの水平移動説明図、第5図は液面
変動量を計算するための図式、第6図は本発明効果を説
明するグラフである。
■・・・CZ炉 7・・・一次元CCDカメラF・・
・フュージョンリング
特許出願人 九州電子金属株式会社
特許出願人 大阪チタニウム製造株式会社代 理 人
弁理士 森 正 澄第1図
第2図
s5図
〔1)Fig. 1 is a schematic diagram of an apparatus for implementing the method of the present invention, Fig. 2 is an explanatory diagram of scanning lines of a one-dimensional COD camera for a Si ingot, Fig. 3 is an explanatory diagram of a fusion ring, and Fig. 4 is an explanatory diagram of a one-dimensional CCD camera. FIG. 5 is a diagram for explaining the horizontal movement of the camera, FIG. 5 is a diagram for calculating the amount of liquid level fluctuation, and FIG. 6 is a graph for explaining the effects of the present invention. ■...CZ furnace 7...One-dimensional CCD camera F...
・Fusion Ring Patent Applicant Kyushu Electronic Metals Co., Ltd. Patent Applicant Osaka Titanium Manufacturing Co., Ltd. Agent Patent Attorney Masa Sumi Mori Figure 1 Figure 2 Figure s5 [1]
Claims (1)
一次元CCDカメラにより結晶と融液との境界のフュー
ジョンリングを計測し、このフュージョンリングの径が
最大に表われる位置へ前記一次元CCDカメラを水平移
動させ、この移動位置及び同位置における一次元CCD
カメラの角度から液面高さを計測し、この計測値に基い
て一次元CCDカメラを、同カメラとフュージョンリン
グの距離が一定値となるように前記一次元CCDカメラ
を垂直移動し、フュージョンリングの径測定を行うこと
を特徴とするCZ炉内の結晶直径測定方法。A one-dimensional CCD camera installed diagonally above and movable in horizontal and vertical directions measures the fusion ring at the boundary between the crystal and the melt, and moves the one-dimensional CCD camera to the position where the diameter of this fusion ring is maximized. is horizontally moved, and the one-dimensional CCD at this moving position and the same position is
The liquid level height is measured from the angle of the camera, and based on this measurement value, the one-dimensional CCD camera is vertically moved so that the distance between the camera and the fusion ring is a constant value, and the fusion ring is moved vertically. A method for measuring the diameter of a crystal in a CZ furnace, the method comprising: measuring the diameter of a crystal in a CZ furnace.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7274287A JPS63239181A (en) | 1987-03-26 | 1987-03-26 | Method for measuring diameter of crystal in cz furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7274287A JPS63239181A (en) | 1987-03-26 | 1987-03-26 | Method for measuring diameter of crystal in cz furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63239181A true JPS63239181A (en) | 1988-10-05 |
Family
ID=13498116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7274287A Pending JPS63239181A (en) | 1987-03-26 | 1987-03-26 | Method for measuring diameter of crystal in cz furnace |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63239181A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63307189A (en) * | 1987-06-08 | 1988-12-14 | Mitsubishi Metal Corp | Device for pulling up single crystal |
JPH01317191A (en) * | 1988-06-15 | 1989-12-21 | Mitsubishi Metal Corp | Device for measuring diameter in single crystal pulling device |
JPH02180790A (en) * | 1988-12-28 | 1990-07-13 | Sumitomo Metal Ind Ltd | Method and device for measuring vibration of molten metal surface |
JPH03279803A (en) * | 1990-03-29 | 1991-12-11 | Shin Etsu Handotai Co Ltd | Method and instrument for diameter measurement for automatic crystal growth control |
US5653799A (en) * | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
US5656078A (en) * | 1995-11-14 | 1997-08-12 | Memc Electronic Materials, Inc. | Non-distorting video camera for use with a system for controlling growth of a silicon crystal |
US5846318A (en) * | 1997-07-17 | 1998-12-08 | Memc Electric Materials, Inc. | Method and system for controlling growth of a silicon crystal |
US5922127A (en) * | 1997-09-30 | 1999-07-13 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
US6171391B1 (en) | 1998-10-14 | 2001-01-09 | Memc Electronic Materials, Inc. | Method and system for controlling growth of a silicon crystal |
JP2015129062A (en) * | 2014-01-07 | 2015-07-16 | 信越半導体株式会社 | Method of adjusting camera position of camera for detecting diameter of silicon single crystal and camera position adjusting jig |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027686A (en) * | 1983-07-19 | 1985-02-12 | Fujitsu Ltd | Apparatus for manufacturing single crystal |
JPS61122188A (en) * | 1984-11-20 | 1986-06-10 | Toshiba Mach Co Ltd | Apparatus for pulling up semiconductor single crystal |
-
1987
- 1987-03-26 JP JP7274287A patent/JPS63239181A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027686A (en) * | 1983-07-19 | 1985-02-12 | Fujitsu Ltd | Apparatus for manufacturing single crystal |
JPS61122188A (en) * | 1984-11-20 | 1986-06-10 | Toshiba Mach Co Ltd | Apparatus for pulling up semiconductor single crystal |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63307189A (en) * | 1987-06-08 | 1988-12-14 | Mitsubishi Metal Corp | Device for pulling up single crystal |
JPH01317191A (en) * | 1988-06-15 | 1989-12-21 | Mitsubishi Metal Corp | Device for measuring diameter in single crystal pulling device |
JPH02180790A (en) * | 1988-12-28 | 1990-07-13 | Sumitomo Metal Ind Ltd | Method and device for measuring vibration of molten metal surface |
JPH03279803A (en) * | 1990-03-29 | 1991-12-11 | Shin Etsu Handotai Co Ltd | Method and instrument for diameter measurement for automatic crystal growth control |
US5653799A (en) * | 1995-06-02 | 1997-08-05 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
US5665159A (en) * | 1995-06-02 | 1997-09-09 | Memc Electronic Materials, Inc. | System for controlling growth of a silicon crystal |
US5656078A (en) * | 1995-11-14 | 1997-08-12 | Memc Electronic Materials, Inc. | Non-distorting video camera for use with a system for controlling growth of a silicon crystal |
US5846318A (en) * | 1997-07-17 | 1998-12-08 | Memc Electric Materials, Inc. | Method and system for controlling growth of a silicon crystal |
US5922127A (en) * | 1997-09-30 | 1999-07-13 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
US6053974A (en) * | 1997-09-30 | 2000-04-25 | Memc Electronic Materials, Inc. | Heat shield for crystal puller |
US6171391B1 (en) | 1998-10-14 | 2001-01-09 | Memc Electronic Materials, Inc. | Method and system for controlling growth of a silicon crystal |
JP2015129062A (en) * | 2014-01-07 | 2015-07-16 | 信越半導体株式会社 | Method of adjusting camera position of camera for detecting diameter of silicon single crystal and camera position adjusting jig |
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