JPH02116734U - - Google Patents
Info
- Publication number
- JPH02116734U JPH02116734U JP2592789U JP2592789U JPH02116734U JP H02116734 U JPH02116734 U JP H02116734U JP 2592789 U JP2592789 U JP 2592789U JP 2592789 U JP2592789 U JP 2592789U JP H02116734 U JPH02116734 U JP H02116734U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- deposited
- inclined surface
- holding mechanism
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 210000000078 claw Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Description
第１図は本考案の一実施例によるプラズマ気相
成長装置の縦断面図、第２図ａは本考案の一実施
例の部分詳細を示す断面図、同図ｂは本考案の他
の実施例の部分詳細を示す縦断面図、第３図は本
考案の他の実施例によるプラズマ気相成長装置の
主要部の縦断面図、第４図は従来のプラズマ気相
成長装置の縦断面図、第５図ａ，ｂはそれぞれ従
来のプラズマ気相成長装置の部分詳細を示す断面
図である。
１０１，２０１……真空チヤンバ、１０２，２
０２，３０２，５０２……トレイ、１０３，２０
３……電極板、１０４，２０４……ガス吹出し口
、１０５，２０５……ヒーター、１０６，２０６
……ロータリーポンプ、１０７，２０７……ター
ボ分子ポンプ、１０８，２０８……ＲＦ電源、１
０９，２０９……ヒーター用電源、１１０，２１
０……マスフローコントローラ、１１１，２１１
……オリフイス、１１２，２１２……ストツプバ
ルブ、１１３，２１３，３１３，５１３……ガラ
ス基板、１１４，４１４……基板固定用凹部、２
１５……基板固定用バネ爪、３１６，４１６……
膜、３１７……エツジ、３１８……バツクプレー
ト、４１９，５１９……ストツパ。
FIG. 1 is a longitudinal sectional view of a plasma vapor phase growth apparatus according to an embodiment of the present invention, FIG. 2 a is a sectional view showing partial details of an embodiment of the present invention, and FIG. FIG. 3 is a vertical cross-sectional view of the main part of a plasma vapor phase growth apparatus according to another embodiment of the present invention, and FIG. 4 is a vertical cross-sectional view of a conventional plasma vapor phase growth apparatus. , and FIGS. 5a and 5b are cross-sectional views showing partial details of a conventional plasma vapor phase growth apparatus. 101,201...vacuum chamber, 102,2
02,302,502...Tray, 103,20
3...Electrode plate, 104,204...Gas outlet, 105,205...Heater, 106,206
...Rotary pump, 107,207...Turbo molecular pump, 108,208...RF power supply, 1
09,209...Power supply for heater, 110,21
0...Mass flow controller, 111, 211
... Orifice, 112, 212 ... Stop valve, 113, 213, 313, 513 ... Glass substrate, 114, 414 ... Recess for fixing substrate, 2
15... Spring claw for fixing the board, 316, 416...
Membrane, 317...edge, 318...back plate, 419,519...stopper.
Claims (1)
定して成膜を行うプラズマ化学気相成長装置にお
いて、前記被堆積基板の保持機構が傾斜面を有し
且つ該傾斜面に前記被堆積基板を保持する手段を
有することを特徴とするプラズマ化学気相成長装
置。 ２ 前記傾斜面に設けられた被堆積基板の保持機
構が突起状物であり、且つその高さが前記被堆積
基板の厚みよりも低いものであることを特徴とす
る請求項１記載のプラズマ化学気相成長装置。 ３ 前記傾斜面に設けられた被堆積基板の保持機
構が該被堆積基板を落とし込む凹部であり、且つ
その深さが該被堆積基板の厚さよりも浅いもので
ある事を特徴とする請求項１記載のプラズマ化学
気相成長装置。[Claims for Utility Model Registration] 1. A plasma chemical vapor deposition apparatus for forming a film by fixing a substrate to be deposited to a holding mechanism for the substrate, wherein the holding mechanism for the substrate to be deposited has an inclined surface; A plasma chemical vapor deposition apparatus comprising means for holding the substrate to be deposited on the inclined surface. 2. The plasma chemistry according to claim 1, wherein the holding mechanism for the substrate to be deposited provided on the inclined surface is a protrusion, and the height thereof is lower than the thickness of the substrate to be deposited. Vapor phase growth equipment. 3. Claim 1, wherein the holding mechanism for the substrate to be deposited provided on the inclined surface is a recess into which the substrate to be deposited is dropped, and the depth thereof is shallower than the thickness of the substrate to be deposited. The described plasma chemical vapor deposition apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2592789U JPH02116734U (en) | 1989-03-06 | 1989-03-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2592789U JPH02116734U (en) | 1989-03-06 | 1989-03-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02116734U true JPH02116734U (en) | 1990-09-19 |
Family
ID=31247092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2592789U Pending JPH02116734U (en) | 1989-03-06 | 1989-03-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02116734U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8826854B2 (en) | 2009-01-09 | 2014-09-09 | Shin-Etsu Chemical Co., Ltd. | Direct-current plasma CVD apparatus and method for producing diamond using the same |
-
1989
- 1989-03-06 JP JP2592789U patent/JPH02116734U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8826854B2 (en) | 2009-01-09 | 2014-09-09 | Shin-Etsu Chemical Co., Ltd. | Direct-current plasma CVD apparatus and method for producing diamond using the same |
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