TWI248108B - Gas distribution system for a CVD processing chamber - Google Patents

Abstract

The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a film on a substrate comprising: providing a chemical vapor deposition chamber, introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface and generating a plasma of the processing gases. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.

Description

1248108 A7 _____ B7 -___^•^im''mataKmmm^^m ......... __||Μ__ ___·|·|«·_·_·· V. Description of invention () Field of the invention: The present invention is generally related to an apparatus and method for processing a semiconductor substrate. More specifically, the invention relates to a method and apparatus for high density plasma chemical vapor deposition of a film onto a substrate. BACKGROUND OF THE INVENTION: Plasma tools for semiconductor processes, such as chemical vapor deposition (CVD), etching, reactive ion etching, etc., typically use an inductive coupling or capacitor of a plasma generator to lightly couple to a processing chamber to collide and maintain an electrical Pulp. One of the advantages of the inductor Lima and the capacitor light-weight plasma is that the inductor is made of a plasma with a small bias on the substrate, which reduces the possible damage to the substrate. In addition, the inductively coupled plasma has a higher ion density, thereby providing a higher deposition rate and an average free path, while also operating at a lower pressure than the capacitively coupled plasma. These excellent properties allow for internal sputtering and/or deposition during processing. Recently, high density plasma (HDP) CVD processes have been used to provide a combination of chemical reactions and physical sputtering. The HDP-CVD process enhances the decomposition of the reactive gas by applying radio frequency (RF) energy to the reaction zone near the surface of the substrate, thereby creating a plasma of highly reactive ion species. The high reactivity of the released species reduces the energy required for the chemical reaction to occur, thereby reducing the temperature required for these processes. The goal in most HDP-CVD processes is to deposit a film of uniform thickness over the entire surface of the substrate while providing good gap fill between the circuitry and other features formed on the substrate. Deposition uniformity and gap filling for plasma generator source architecture, source RF generator power, bias RF production page 3 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) (please read first On the back: ^Important and fill out this page) · I--11,-------Ling' Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1248108 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing A7 V. Description of the invention () The power of the generator, the change of the flow rate of the treatment gas and the design of the treatment gas nozzle are quite sensitive. The nozzle design includes the symmetry of the nozzle distribution, the number of nozzles, and the mouth of the nozzle placed on the substrate during processing. The price of the product and the lateral position of the nozzle relative to the surface of the substrate. These variables vary with respect to changes in the processing performed in the tool and with respect to process gas changes. Figure 1 is a cross-sectional view of a HDP_C^D chamber for depositing various films on a substrate. An example of an HDP-CVD chamber is the Ultima HDP_CVD system available from Applied Materials, Inc. of Santa Barbara, California. In general, the HDP-CVD chamber 1〇〇 includes a chamber seal 1〇2, a substrate support member 104, a gas inlet i〇6, a gas exhaust 1 and a double coil paste generator. 1 1 〇. The chamber seal 丨〇 2 is typically mounted on a system platform or a single stone, and an upper cover n2 seals the upper portion of the chamber seal 1 〇 2 . A dome 114, typically made of a ceramic such as alumina (A12〇3), is placed over the cover 112. The two-coil plasma generator n〇 typically includes a first and a second coil 11 6 , 1 18 and a first and a second RF power source, and the 1 20 ' 1 22 are electrically connected to the first and the first Two coils ij 6, 丨丨 8. In order to provide a high density plasma, the first coil 116 is placed beside the dome 114 while the second coil 1 18 is placed on the dome 1 14 . The gas inlet 1 〇 6 typically contains a plurality of gas nozzles 124 that are disposed in the region of the chamber within the environment of the substrate support member. Typically, the gas nozzle 124 extends from the inner surface of the chamber to a distance from the substrate which is positioned on the substrate support 104 to provide a uniform distribution of process gas to the substrate during processing. The gas vent 108 includes a gas outlet 126 and a pump 128 for venting from the chamber and controlling the pressure in the chamber during processing. For deposition processing, page 4 of this paper is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) · .1— ------------- (please read first) Note on the back and fill out this page)

• ι_1 ϋ ϋ I Jun 5, Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives, Printing 1248108 Description of the Invention (The gas system is introduced via the gas inlet i 〇6 and the plasma of the processing gas is generated in the chamber to Electrochemical vapor deposition. The deposition typically occurs on all surfaces exposed to the process gas, including the inner surface of the chamber, such as the dome 1 1 4, because the virtual flow of birds, you, , 'the milk m line at the same flow rate It is introduced through the gas nozzles 1 2 4 of the same length, and the 6 corpses of the larvae are inserted into the chamber for uniform gas distribution. The door water % water (HDP) treatment has become an important process for the manufacture of integrated circuits. HDP The treatment can be used to advantageously deposit a film on the substrate or a film whose last name is on the substrate to form an integrated circuit. Regarding other depositions and the name of the person, the importance of contamination is in the processing environment. In HDP processing, because tantalum density plasma typically creates high temperatures in the processing chamber. Unwanted mobile ions and metal contaminants that are driven away from the chamber components as the temperature in the processing chamber increases. It seems to increase. Therefore, the amount of particles in the treatment environment is harmfully high. Particle contamination in the room can be controlled by periodically cleaning the chamber with a plasma of a cleaning gas, typically a fluorine compound. The cleaning gas system is selected based on the ability to bind the precursor gas and the deposition material formed on the chamber component to form a stable product that can be discharged from the chamber to clean the processing environment. In high density plasma reactors, most contain The fluorine (ie NF3, CF4 and C2F6) cleaning gas systems are highly decomposed and can quickly bind the deposition material to form a stable product that can be discharged from the chamber. Typically, the surface of the chamber is cleaned and then coated prior to the deposition process. The outer layer is dried to protect the surfaces from the treatment gas. The dried outer layer is typically deposited by depositing the material onto the surface of the chamber before the substrate is introduced into the chamber for processing. This step is typically performed by depositing a The film is applied to the fifth page of this paper scale for China National Fresh (CNS) A4 specifications (210 X 297 mm) --ϋ ϋ n ϋ ϋ ϋ ϋ ϋ « 0 1 III ·ϋ I I θ,· ϋ ·ϋ II ·1 ϋ _ (Please read the note on the back and fill out this page) into 1248108 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description ( Rows are applied to form the inner surface of the treated area in accordance with a deposition process. As a processing example, a decane gas can be introduced into the chamber and oxidized according to the following equation to deposit a layer of silica.

SiH4 + 〇2 — Si02 + 2H2 Equation 1 In a 200mm substrate application, a deposition process is typically performed using a source RF power of approximately 50,000 watts and a bias RF power of approximately 2,500 watts. This drying step prior to deposition was carried out using a source RF of about 45 watts and a bias RF of about 1600 watts. In a 3 mm substrate application, the deposition process is typically performed using a source rf of about 10,125 watts and an offset RF of about 5625 watts. The drying step prior to deposition is performed using a source RF of about $2 watt power and a bias rf source of about 3600 watts. After processing a plurality of substrates, the dried coating is removed or cleaned from the inner surface of the chamber and the material deposited on the dried coating, and a new dry coating is applied to the inner surface of the foot to provide a Clean, stable environment for handling the next batch of substrates. The problem encountered with HDP-CVD chamber deposition is that when the chamber is used to deposit a fluorine-based film, such as fluorine glass (FSG), the fluorine in the plasma diffuses, and the dry coating and attack the ceramic (gossip) 2〇3) Dome. The fluorine atoms reaching the ceramic dome react with the ceramic to form Ah 〇 xFy (where 乂 and y are integers) on the surface of the circle I. The darkening of the dome and the treatment drift were analyzed by secondary ion mass spectrometry (SIMS) due to the formation of AL2〇xFy on the dome. The Al2〇xFy formation on the top of the dome changes the electrical properties of the dome material and results in a processing drift on the uniformity of the shell, the deposition rate, the fluorine concentration, and the uniformity of the sniper in the chamber. Because of the processing drift, non-uniform processing occurs on page 6 of the substrate ———— (please read the notes on the back and fill out this page) tr---------5 1248108

On the surface, one substrate and the other substrate are different from each other. (Please read the phonetic on the back first? Then fill out this page.) As a solution to the drift problem and prevent the diffusion of fluorine atoms through the dry coating, a thick dry layer (&gt; 00 angstroms) is used to process each base. It was deposited before the material. The thick dry layer lengthens the time required for the fluorine atoms to diffuse through the dried layer and to the top of the figure. However, when the treatment time is long enough, the fluorine atoms can still diffuse through the dried layer to form Al2?xFy on the dome and cause process drift. Furthermore, too much time is spent on depositing and removing thick dry layers. The dry layer must be removed after several substrates have been treated to ensure that fluorine atoms do not diffuse through the dry layer and form A12〇xFy on the dome, and that a new dry layer must be processed before the next batch of substrate Deposited. The excess time spent in depositing and removing thick dry layers is another major disadvantage of system yield reduction. Another problem associated with the deposition of erbium-doped glass using the HDP-CVD chamber is that current gas distribution systems do not provide uniform dopant transport across the surface of the substrate, resulting in depositional densities on the surface of the substrate that have differences in material properties. glass. In general, the homogeneity in processing is desirable to maintain product quality. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives. Therefore, there is a need for an apparatus and method for depositing thin films on substrates while eliminating dome contamination caused by fluorine and other gases, and handling drift problems. We would like an apparatus and method for increasing the yield by reducing the time required to form and remove the dried layer on the inner surface of the dome. More preferably, a method and apparatus are provided to provide uniform doping to the entire surface of the substrate to complete the doped glass film. Page 7 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 1248108 A7 V. Invention Description () The purpose of the invention and the general invention are generally provided by species &amp; 彳 彳, 里 与 and 10,000 The method is used for depositing a film on a substrate, and at the same time reducing the pollution of the dome and the deposition of the dome, the deposition rate, and the gas at the time of processing. The problem of processing drift caused by the uniformity of the ash. The apparatus and method are increased in yield by the same time as the time required to form a dry coating on the inner surface of the dome and remove it. The invention provides a device for depositing a film on a substrate, the device comprises a processing chamber, an i-material support member is disposed in the chamber, a first gas inlet, and a first-prepared gambling person Rolling with the inlet, a plasma generator and a gas vent. The first gas population transports the first gas at a first distance from the inner surface of the chamber, and the second gas inlet delivers a second distance shorter than the first distance from the inner surface of the chamber. A relatively partial pressure is generated adjacent to the inner surface of the chamber to substantially reduce the deposition of the first gas to the inner surface. For example, it is used to deposit a gas glass (10) (7), the first gas contains ruthenium tetrafluoride and oxygen, and the second gas, ruthenium contains decane and argon. Because of the higher partial pressure created by the rare gas, the produced W is hindered from the cesium ion from the first gas to prevent deposition and diffusion through the dry support to the inner surface of the chamber, for example to ceramics. The dome, the elimination of the problem of processing drift caused by the dome rat dye. Alternatively, the first gas is placed in a corner of the substrate different from the first gas inlet relative to the surface of the substrate. also. In addition, the dream of the present invention is increased by reducing the time required to form a dry coating on the inner surface of the dome and removing it for a long time. The present invention also provides a device for dispensing a gas transfer body in a processing chamber, the device comprising a first gas inlet for transporting the first strip of 'R thieves' to leave the eighth page of the paper within the chamber. Applicable to China National Standard (CNS) A4 specification (21〇χ 297 mm) (please read the note on the back and fill in this page) --------^---------ft Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 1248108 A7 B7 V. Invention Description () (Please read the back note first and then fill out this page) Surface first distance, and a second gas inlet, from the indoor surface A second gas is delivered at a distance that is closer to the first distance. Since the second gas system is introduced closer to the inner surface than the first gas, the second gas creates a higher partial pressure adjacent to the indoor surface, and reduces the inclusion of the first gas species in the deposit on the inner surface. . Alternatively, the first gas inlet is disposed at an angle different from the second gas inlet relative to a surface of the substrate to accomplish the same goal, particularly when the nozzle length is from the interior surface. When the size is limited. Another aspect of the present invention provides a method for depositing a film onto a substrate, comprising the steps of: providing a chemical vapor deposition chamber, introducing a first gas and a second gas into the chamber and generating a processing gas Plasma. The first gas system is introduced at a first distance from the indoor surface via a first gas inlet, and the second gas system is introduced at a second distance from the indoor surface via the second gas inlet, the second distance being less than the first distance. Therefore, the second gas creates a higher partial pressure on the inner surface adjacent to the chamber to reduce deposition of the first gas on the inner surface. Alternatively, the first gas system is introduced at an angle different from the second gas relative to the surface of the substrate to accomplish the same purpose. Preferably, the first gas system is angled toward the substrate while the second gas system is angled toward the dome. Another aspect of the invention provides a method of distributing a gas within a processing chamber, the method comprising: introducing a first gas via a first gas inlet at a first distance from an interior surface, and a second distance from the indoor surface at a distance, introducing a second gas through the second gas inlet, wherein the second gas creates a higher partial pressure on the adjacent indoor surface to reduce the first gas page 9 Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 1248108 A7 B7 V. Description of invention () Deposited on the inner surface. Alternatively, the first gas system is introduced at an angle different from the second gas relative to the surface of the substrate. The above-mentioned features, advantages and objects of the present invention are understood by reference to the specific embodiments of the present invention, which are illustrated in the accompanying drawings. It is to be understood, however, that the invention is not limited by BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view of an HDP-CVD chamber for depositing various films on a substrate. Figure 2 is a cross-sectional view of the processing tool 10 of the present invention. Figure 3 is a partial cross-sectional view of the substrate support and processing set for the substrate support. Figure 4 is a cross-sectional view through a chamber of the present invention showing a gas distribution assembly 300. Figure 5 is a cross-sectional view of the first gas passage 316 having a nozzle 302 disposed therein. Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperative, Figure 6 shows a cross-sectional view of the second gas passage 318. Figure 7 is a cross-sectional view of the central gas feed tube 3 1 2 disposed through the dome 3 2 . Figure 8 is an exploded view of the base plate 33 of the cover assembly and the gas distribution ring 310. Figure 9 is a perspective view of another embodiment of the gas distribution ring 410 according to the present invention. Page 10 The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 1248108 A7 B7 V. Description of the Invention () Figure. (Please read the note on the back and then fill out this page.) Figure 10 is a partial cross-sectional view of a multi-layer gas distribution ring 410 showing a second annular gas passage 4 16 and an oblique nozzle. 4 0 2. Figure number comparison description: 10 treatment tool 12 chamber body 14 cover assembly 16 substrate support 18 chamber wall 20 inner soil treatment zone 22 concentric exhaust passage 24 substrate entry 埠 26 support 埠 28 channel 30 distal plasma source 33 Substrate 62 Energy transfer assembly 64 Temperature control assembly 66 Cylindrical side wall 68 Flat top 70 Junction 72 Top coil 74 Side coil 76 RF power supply 78 RF power supply 80 Heating plate 82 Cooling plate 86 Thermal plate 230 Electrostatic clamp 232 Support 236 Dielectric material 240 pinholes 246 ceramic washers 248 ceramic caps 300 gas distribution components 302 gas nozzles 304 gas nozzles 306 side nozzles 308 gas paths 3 10 gas distribution rings 3 12 gas feeds 3 14 suitable materials economic ministry intellectual property bureau employee consumption cooperatives printed 11 pages of paper size applicable to China National Standard (CNS) A4 specification (210 X 297 mm) Ϊ248108 V. Invention description (3 1 6 gas channel 320 channel 324 0 ring 330 defining hole 338 〇 ring 342 path 352 gas source 356 Line 360 Gas Controller 364 Gas Source 368 Line 372 Gas Controller 402 Nozzle 410 Valve Ring Invention Detailed description: 318 322 326 3 3 6 340 350 354 358 362 366 370 374 404 Gas channel 〇 ring seal 0-ring 埠 channel gas controller gas source line gas controller gas source line nozzle (please read the back first Note: Please fill out this page again) Ministry of Economic Affairs Intellectual Property Bureau Employees Consumption Cooperative Printed Figure 2 is a cross-sectional view of the processing tool of the present invention. Preferably, the tool is a high-density electric Mongolian chemical vapor deposition chamber. The tool comprises a king body 12, a lid assembly 14, and a substrate support member 16 defining a ventable seal member for performing substrate processing. The chamber master 12 is preferably a single machined structure having a chamber wall 18 within its definition The ring treatment zone 2〇X and its lower end define a concentric exhaust gas passage 22. The chamber body 12 defines at least one substrate entry port 24 that is selectively sealed by a slit valve magazine 26. , where the cantilever mounting substrate support handles the approximate number of packages 第 side page 12 This paper scale applies to China National Standard (CNS) A4 specifications (210 X 297 mm) i — ί! set·! _丨! 4' 1248108 Ministry of Economic Affairs Intellectual Property Bureau employees Co., Ltd. Printing A7 V. Inventive Note () is installed via this raft. I #, r, 衮 衮 衮 衮 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及<side end. Two other side sills (not shown) are disposed on the substrate support member 16 above the gas passages in the wall 18 on opposite sides of the soil. :: ’ ’ and is connected to the cleaning of the gas-containing gas formed by the remote electropolymer source 3, such as being decomposed. The second entry channel 28 into the chamber enters the chamber from the side sill. The crying n system is provided to direct the gas to the reaction e domain, which has a large number of components in the child area. The upper surface of the chamber wall 18 defines a substantially flat landing zone, and the lid assembly cover assembly 14 is formed by a cover or a plurality of 0-ring grooves formed on the upper surface of the chamber wall 18 to accommodate one or more of the crucibles. The ring forms a hermetic seal between the chamber body main body 12 and the substrate 33. The chamber cover assembly 14 generally includes an energy transfer dome 32, an energy transfer assembly 62 1 - temperature control group # 64, supported on a substrate 33 that is held by the drum keys. The substrate 33 defines an inner ring passage, and a towel is provided with a gas distribution ring. A ring-shaped ring groove is formed on the top of the valve ring to receive the worm: a ring-shaped ring to seal the dome 32 and the top of the valve ring. The cover assembly picks up the actual seal of the power slurry processing area and the energy delivery system to drive the search. A cover is preferably provided over the entire cover assembly to enclose the various components. The dome 3 2 generally includes a cylindrical side wall 66. One end of the side wall is closed by the flat roof 68. The cylindrical side wall 66 is substantially perpendicular to the upper surface of the substrate support τ ί 6 and the flat top portion 6 8 is substantially parallel to the surface of the substrate support 16 . The junction 70 between the side wall and the top is rounded to provide a curved inner wall of the negative 3 . Dome 3 2 is made of dielectric material, which is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). (Please read the notes on the back and fill in the tribute first) -------- Order ---------^ 1248108 A7 B7

Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description () energy transferability, preferably ceramics such as alumina (A1203). Two separate powered RF coils, a top coil 72 and a side coil are wound around the exterior of the dielectric dome dome 32. The side coils 74 are preferably shielded from ground by M1 to reduce electrical crosstalk between the coils 72 and 74. Lines 72 and 74 are supplied by two variable frequency rf sources 76 and 78. Each power supply includes a control circuit that measures the reflected power and adjusts the digitally controlled synthesizer in the RF generation to sweep the frequency. Typically starting with 1 to minimize reflected power. When the plasma is ignited, the state of the circuit changes because the plasma acts as a resistance parallel to the coil. At this point, the rf generator continues to sweep ' until it reaches the minimum reflected power point again. The power rain circuit is designed such that each set of windings resonates at or near the frequency of reaching the minimum reflected power point such that the winding voltage is high enough to drive sufficient current to maintain the plasma. Therefore, even if the circuit resonance point in the process changes, the frequency adjustment protects the system from approaching resonance. In this way, frequency fading eliminates the need for circuit adjustment and impedance matching by changing the value of the impedance matching component (such as capacitance or inductance). Each power supply ensures that the desired power is delivered to the load, regardless of impedance mismatch, or even a continuously varying impedance mismatch due to changes in plasma impedance. To ensure that the correct power is delivered to the load, each rf produces a crying body that consumes reflected power and increases the output power so that the transmitted power is maintained at the desired level. An RF matching network is typically used to transfer power to the plasma. When the substrate being processed is properly adjusted, the dual coil configuration can control the radial ion density distribution in the reaction chamber and produce a uniform ion density across the surface of the substrate. Uniform ions on the surface of the substrate for uniform deposition of the wafer and the 14th page of the paper obtained iir China national g^NS) A4 specifications (210 x 297 liters) ---------------- -----------^ Λ (Read the first note on the back of the page and fill in this page) ___ 1248108 A7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (pore filling efficiency contribution And assist in alleviating the plasma charging of the oxide layer of the device due to the uneven density of the plasma. When the coil is applied to the device, the uniform plasma density and deposition characteristics can be greatly improved. The dome 32 includes one at the same time. The temperature control component 64 is adapted to adjust the dome temperature in various processing cycles, that is, the deposition cycle and the cleaning cycle. The temperature control component generally comprises a heating plate 80 and a cooling plate 82 adjacent to each other and preferably has a thin film heat conduction. A material, such as Graf〇il, is disposed therebetween. Preferably, a Grafoil layer of about 4 mils to 8 mils is disposed therebetween. A thermally conductive plate 86, such as an A1N plate, has a groove on its lower surface for enclosing Thin foil 72. A second layer of Graf〇il, preferably about 1 to 4 mils thick Disposed between the heat conducting plate 86 and the heating plate 80. A third heat conducting layer is disposed between the coil 72 and the dome dome 32. The third layer is preferably a layer of Chr〇merics having about 4 to 8 mils. The thickness of the heat conducting layer allows heat to easily enter and exit the dome. Preferably, the dome is heated during cleaning and the dome is cooled during processing. The cooling plate 82 includes one or more fluid passages formed therein through which flow There is a cooling liquid such as water. The water passage in the cooling plate is preferably connected in series to the cooling passage formed in the chamber body. A press-lock type rubber hose with a quick release member supplies water to the chamber body, and the cover In the cooling line, the return line has a visible flow meter with an interlocking flow switch. The flow meter is corrected by the work chamber at a pressure of about 60 psi 〇 8 gpm. The temperature sensor is mounted on the dome. The heating plate 80 preferably has one or more resistive heating elements disposed therein for providing heat to the dome during the cleaning phase. Preferably, the heating plate is on page 15 -------------Book---- — — — (Please read the notes on the back and fill out this page) 1248108 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 5, Invention Description (made of cast aluminum, however, other materials known in the field are also It can be used. A controller is connected to the temperature control _, 且, and pieces to adjust the temperature of the dome. 耩 Direct conduction, heating plate ^ and cold plate 82 are used to control the dome temperature. Controlled in , ϋ K, improved between wafer wafers: repeated: 'deposition adhesion, and has been found to reduce the spalling in the chamber or: sub-number. Depending on the processing requirements, the dome temperature is substantially maintained by the spoon 100. (: to about 200 Χ: within the range., Gangmen has shown that the higher the cleaning rate (etching rate), the better the adhesion of the film to the substrate can be achieved at a higher _ top/dish level. The figure is a cross-sectional view of a substrate for a substrate support, a dental component and a treatment group for supporting the substrate. Preferably, the substrate ^ soil support '仵〗 6 comprises an electrostatic chuck 2 electrostatic central disk 230 Including - support body u and fangs 23 ^, preferably integrated with a conductive material to make money 'materials' (four) with high thermal quality ^ good conductability, :: 吏 get heat from the wafer is easy to absorb, - cooling The upper surface, the anodized aluminum or the anodized aluminum is used for the support body 232, because it has a high thermal conductivity of about 2.37 watts/cm, C, and the W + conductor wafer The support body 232 may comprise other metal materials such as stainless steel or nickel, and the support fa 232 may comprise other non-conductive materials or the entire support 232 may comprise a non-conductive or semiconductor material. In another embodiment, the support eye 232 comprises a ceramic monolith. In this [wood structure, the ceramic plate can be The inductive-conductive member is built therein. The conductive member may comprise a metal member, a green printed metallization, a mesh screen, etc. a smooth layer; the germanium material 236 covers the upper surface 238 of the support m 232 for processing It is also known that a substrate or wafer W. Preferably, a voltage of about 700 volts is applied by a DC source (not shown). Page 16 This paper scale applies to the Chinese National Standard (CNS). A4 specifications (21〇χ 297 mm---------- see ------ 丨定---------5 (Read the first note on the back and fill out this page L248l〇8 V. Description of the invention (A7 B7 substrate supporting jaw assembly 23 0 to generate electrostatic attraction, so that wafer w is lost near the upper surface of support 232. Support body 232 contains lift lock hole 24〇, to allow the lift pin to extend through the support body, and (4) the substrate on the substrate support member to actuate the substrate transfer. One is extended from the outer surface of the support body 232 to support a ceramic collar 246 and % Women's flange 234, the collar prevents or prohibits the plasma contact in the processing chamber or the electrostatic chuck. The m 248 acts as a jacket to cover or protect the support. The lateral surface of the body support 232 is not subjected to plasma during processing. The ceramic cover 248 simultaneously clamps the collar 2 to the flange 234. Returning to Fig. 2, the substrate support member 6 partially extends through The side gusset 26' formed in the emperor 18 is mounted on the chamber wall 18 of the flange 46 to provide a substantially circular substrate receiving surface 2 to the center of the chamber. The substrate support 16 Also included is a temperature control system that maintains the temperature of the substrate during processing. The temperature control system preferably includes a fluid channel 49 within the substrate support, the communication system is coupled to a source of thermal fluid (not shown) and a For example, a microprocessor controller (not shown). Alternatively, other heating or cooling methods such as resistance heating can be used to control the substrate temperature during processing. When the substrate support 16 is positioned in the chamber, the outer walls 50 of the substrate support 16 and the inner wall 52 of the i define an annular fluid passage 22 that is substantially uniform over the entire circumference of the substrate support 16. Preferably, the passage U and the exhaust port 54 may be substantially concentric with the substrate receiving surface of the support. The exhaust bee 54 is positioned substantially centrally below the substrate receiving portion of the support substrate support 16 to uniformly draw gas through the passage 22 and out of the chamber. This allows a more uniform gas to flow over the entire surface of the substrate, and is radially downward and this paper size applies to the Chinese National Standard (CNS) A4 specification (1⁄2 x 297 public)

- — — — — I — I — III — HI! — ! — ^ « — — — — —— I— ^ (Please read the notes on the back and fill out this page) 12481〇8 x Inventions () Outward, after the middle of t zhongwan "to show Shao's exhaust 埠 54. Uniformly deposited film; Yishan A ^ zoom g, hunting pressure and residual time uniformity 3 疋 treatment room, ancient, closeness. “Yes, for example, the position of the substrate is different from that of the pump 、,”: Include: “Double-blade throttle valve assembly 56' (5) Read 58 and – Full-wheel back/Pile stack is installed on the obliquely lower part of the chamber body to The pressure control inside the room. The double-leaf η...the knife k is supplied, and the blade, that is, the flow valve assembly 56 and the gate valve 58 are disposed between the main body of the chamber main body 1 2, the wind, the ninth, the R. 2 and the full-wheeled pump 60, to allow The barrier through the gate 58 and/or the 戋 戋 拴 在 在 在 在 在 在 在 由 由 由 由 由 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 A 16 second engine pump is preferred, but any other pressure that can be accomplished in the chamber can be used. A front pipe 57 is connected to the , , , &quot; code pump to the seed and downstream position. This provides an inverse pumping force. The tube is then connected to a remote host pump, typically a rough pump. The 59 series is formed in the pump pile to mount the flange 61 of the front tube. In the cleaning of the room, the cleaning gas system flows into the chamber at a high speed, thereby increasing the pressure in the chamber. Therefore, in one aspect of the invention, the turbine pump is separated from the chamber by the gate valve 58 and the main pump is used for cleaning. At the time, maintain the pressure in the room. When the substrate is processed in the chamber, the vacuum pump vents the chamber to a pressure of about 4 soils in the range of about 6 Torr, and a metered process gas or process gas stream is supplied to the chamber via the gas distribution assembly. The chamber pressure is directly controlled by measuring the chamber pressure and feeding this information to a controller that opens and closes the valves to adjust the pumping speed. The gas flow rate and concentration are directly on page 18. This paper size applies to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) (please read the back of the paper first > then fill in this page) ----! !订---!!4 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 1248108 A7 B7 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printing 5, invention description (by the mass flow controller, via - provided in the processing program The software set point is controlled. By measuring the flow rate of the gas drawn through the exhaust port 54, a mass flow controller (not shown) on the inlet gas supply can also be used to maintain the chamber. Desirable pressure and gas concentration. The gas distribution assembly 300 will be described below with reference to Figures 4 to 8. Figure 4 is a cross-sectional view through a chamber of the present invention showing the gas distribution assembly 3 (8). The gas distribution system includes an annular gas distribution ring 31〇 disposed between the lower portion of the dome and the upper surface of the vertical body, and a pair of center gas feed portions 312 passing through the upper end of the dome. The gas system is installed around the dome. Gas nozzles 302, 304 are introduced into the chamber, The nozzle is located at the bottom of the dome 32, and the centering gas nozzle 306 is positioned above the dome. The gas system is introduced into the chamber through a gas nozzle 3〇2, 3〇4 mounted on the circumference. The bottom of the dome 32, and a pair of intermediate gas nozzles 3〇6 are located in the top plate portion of the dome. One advantage of this architecture is that most of the different gases can be introduced into the chamber from selected locations within the chamber via nozzles 302'304 and 306. Additionally, other gases such as oxygen' or a combination of, for example, oxygen and SF4 may be introduced along the side nozzle 306 via a gas passage 3遒8 disposed adjacent the nozzle 3〇6 and other than being introduced into the chamber. Gas mixing. In general, the gas distribution ring 3丨〇 comprises a plurality of aluminum or other suitable material 314 having a majority formed therein γ埠&gt; for receiving the spray p angle and with one or more gas passages 316, Preferably, at least two of the separated vents are formed in the gas ring to supply at least two gases into the chamber. Each 埠 311 is connected to a gas distribution channel formed in the ring (3 16 or 3 18 In an embodiment of the invention, They can be connected to the channel page 19 This paper scale applies to the Chinese national standard (CNWA4 specification (210 X 297 public)) ------------- (please read the notes on the back and fill in This page) / V. Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed 12481〇8 Description of the invention ('The material can be connected to another channel. This configuration allows separate gases such as hi and 〇2 to be introduced into the chamber, for example. Figure 5 is a cross-sectional view 'showing the first gas-passing 316 connected to - 埠3 14 disposed therein with a nozzle π. As shown, the gas passage 316 is formed in the wall of the chamber body. The upper surface, and preferably the entire circumference of the chamber wall. The annular gas ring has a first set of ports 32 〇 that are longitudinally seated within the ring, and the lanyard is connected to each of the ports provided with a gas distribution in the vent. When the t gas ring system is positioned on the gas channel, the path is in communication with the channel. The valve ring is sealed to the upper surface of the chamber wall, and is placed through the two-part "0 shape % 322, 324, from the channel to the outside # to prevent gas &amp; leak to 1: inside #. A polyamine fluoroacetate (Ρ ΓΡΕ), such as a furon or other similar product, is placed in a groove 32 8 in the channel to prevent gas leakage into the chamber. The nozzles 302, 034 disposed in the crucible 314 are preferably threaded and mated with the threads (to provide a seal therebetween and provide a quick and easy replacement. A defined aperture 330 is located at the end of each nozzle And can be selected to provide a desired distribution of gas within the chamber. Figure 6 shows a cross-sectional view of the second gas passage 318. The second gas passage 3 18 is formed over the annular gas distribution ring and Similarly disposed in the annular structure, in the circumference of the gas distribution ring, a horizontal placement path 323 connects the first gas to the first or most enthalpy formed in the gas ring, and other gases are disposed therein. a nozzle. The second gas passage includes a portion formed by a cover portion of the cover. The cover is supported by the dome 3 2 and sealed by the substrate 3 to the top end. The gas ring 3 10 is interlocked to the hinge to the chamber. Substrate 3 3 on the main body. Page 20 (Read the first note on the back and fill out this page) Book · 1248108 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed Β 7 Β 7 V. Invention Description () One of the advantages of the present invention The air distribution ring can be easily removed and There are a number of rafts that form a ring that receives and positions the nozzle tip at various angles to replace 'making the gas distribution condition adjustable. In other words, in some applications, it can facilitate some gas nozzles up to one of the chambers. Angle, or 'inversely it can be down in the chamber. The crucible formed in the gas distribution ring can be milled so that a desired angle can be selected to provide the desired processing result. In addition, at least two gas passages are made It is possible to separately transport at least two gases into the chamber to allow for greater control of the reactions occurring between the various gases. Furthermore, the gas reaction in the gas distribution assembly can be prevented by separately transporting the gas into the chamber. Figure 7 A cross-sectional view 'shows a central gas feed Shao 3 ί 2 disposed through the dome 3 2 . The upper gas feed 3 1 2 is preferably an oblique structure having a bottom 334 disposed on the dome The upper end and an italic body 336 are disposed in the groove; the two are formed in the groove in the dome. The two separated 〇-shaped rings 336, 3 3 8, one is below the italic 3 3 6 and one is italic 3 3 6 side facing the next 'use Providing a sealable contact between the gas feed 312 and the dome of the chamber. A 340 is formed in the lower portion of the body of the upper gas feed portion to receive the nozzle 306 for transporting gas to the chamber. At least one gas path 342 It is to be placed through the gas feeding portion 312 to transport the gas into the path. For example, the gas of oxygen can be transported along the side with, for example, SiH4 gas. The figure 8 shows the substrate base handle of the cap assembly and the gas distribution ring 310. Fig. 1 channel 350 is formed on the lower portion of the substrate substrate 3 3 to accommodate the gas distribution ring 3 10 . The gas distribution ring 3 10 is rivet or attached to the substrate 3 3 . The board is hinged to the main body of the chamber. Page 21 This paper scale applies to the Chinese National Standard (CNS) A4 specification (21〇X 297 mm) --------I---------- II ^ ---IIIII 1 ^ —II (Read the first note on the back and fill out this page) 1248108

Returning to Figure 4, a first 翕w rolling source 3 52 and a first gas controller two gas source 358 and a second gas control first desired gas entering the gas distribution 3 5 4 controlling the first gas In the case of Minnan, the r. rite, the work and the road 3 56 enter the first gas passage 3 16 formed in the chamber wall. Similarly, the controller 360 is supplied to the third gas source 364 via a conduit 362, and a third gas source 364 and a third gas controller 366 are supplied to the third gas via line 368 to The third nozzle 3〇6 on the top of the chamber...the fourth gas source 307 and the fourth atmosphere 虱to虱 372 are supplied to the gas path 308 via line 374.细士笙 - &gt; 秘+心^,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Upper part. According to the present invention, for the deposition of fluorine-containing glass (FSG), SiF4 and oxygen are introduced into the chamber through the nozzle 304, and nitrogen is introduced into the chamber through the nozzle 3〇2. Since the spray 〇 2 is shorter than the mouth 3G4, the gas introduced through the nozzle 302 creates a higher partial pressure on the inner surface of the dome, and prevents the passage of the gas. The gas introduced by the nozzle 3〇4 is deposited on the inner surface of the dome. When applied to the FSG process gas, the higher portion of the pressure on the inner surface of the dome reduces the deposition of fluorine on the inner surface. The length of the nozzle 3〇2 required to provide a higher partial pressure of the inner surface of the dome is determined by the length of the nozzle 304 and by the flow rate of the process gas from each of the nozzles 3〇2 and 3〇4. Preferably, the process gas flow rate is between about 50 sccm and about 80 sccm. Preferably, the process gas system is supplied to the chamber to provide about 1 : 1 of gas from the nozzle 302 and gas from the nozzle 304. The ratio. Typically, when the nozzles 302 and 304 are on page 22, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (please read the back of the back sheet and fill out this page) · I- -----Order----——i^ Printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative! 2481〇8 A7 B7, invention description () (please read the back of the note first and then fill in this page) When the flow rate is the same, the length of the nozzle 3 〇 2 which is longer than the length of the nozzle 304 is in the ratio of about 0. 24 to about 0.85. In general, for a typical 2 mm substrate processing chamber, the length of the nozzle 304 is between about 2 · 5 5 忖 to about 3 〇 5 、, and the length of the nozzle 302 is about 1.75 吋 to about 2.55. between. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives. Another consideration for determining the length of the nozzle 302 is that the nozzle 3〇2 must provide sufficient gas flow to the surface of the substrate being treated to maintain uniform processing. Therefore, the distance from the tip of the nozzle 302 to the substrate relative to the distance from the tip of the nozzle go# to the material becomes a factor determining the length of the nozzle 302. Typically, for a 200 mm substrate processing chamber, the tip of the nozzle 304 is placed on a substrate that is approximately 0.5 to 2.5 inches away from the substrate support (i.e., at the tip of the nozzle 3, 2, 3, 04 and the base) The distance between the planes of the material surface). For the same 200 mm chamber, the horizontal offset distance between nozzle 302 and the edge of the substrate is typically from about 0.5 Torr to about 3 Torr. For example, in a 200 mm substrate processing chamber, wherein the substrate is placed about 1.78 Å away from the plane containing the nozzle 3〇4 and the tip of the nozzle 302, the length of the nozzle 302 is about 2 55 忖, and the length of the nozzle 304 is about 3.05 吋, And the horizontal offset distance of the nozzle 3 〇2 is about 1.45 Å away from the edge of the substrate, and the horizontal offset distance of the nozzle 304 is about 0.9 离开 away from the edge of the substrate. As another example, the length of the nozzle 3〇2 is about 1.75吋 and the length of the nozzle 304 is about 2.55吋, and the horizontal offset distance of the nozzle 3〇2 from the edge of the substrate is about 2.5 5吋, the nozzle 3 〇4 The horizontal offset distance from the edge of the substrate is about 1.45 Å. The flow rate of the process gas from the nozzle 3〇2 and the nozzle 3〇4 is the same, at about 5 〇SCCm and about 8 〇sec. For example, the substrate is processed in the aforementioned processing chamber for the following parameters. The paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 12481〇8

The Intellectual Property Office of the Ministry of Economic Affairs, the Consumers' Cooperative, printed the Shen and FSG's to cause a substantially uniform deposition on the substrate, and there was no processing drift caused by the diffusion of fluorine into the dome. The length of the mouth 3 〇 2 is i 7 $ leaves and the length of the nozzle 304 is about 3 · 〇 5 吋. The substrate is placed about 1.78 inches below the tip of nozzle nozzle 302 and nozzle 304. SiF4 and oxygen were introduced into the chamber via nozzle 304 at about 56 Sccm, while SiH4 and oxygen were introduced via nozzle 022 at about 66 sCCm. The power supplied to the first coil is about 1 500 watts and the power supplied to the second coil is about 2 〇 watts. At the time of the deposition process, the temperature of the substrate was maintained at about 4 Torr, while the temperature of the dome was maintained at 1200 °C. The substrate support is biased to 8 watts. The chamber pressure system was maintained at 8 mTorr. With the above parameters, the deposition process produces a uniform and sufficient FSG deposit&apos; with a k value as low as 3.4. The deposited FSg film is stable and meets the characteristics of all desired films. The hard body (i.e., ceramic dome) is not impacted by fluorine atoms, and no fluorine atoms can completely diffuse through a dry layer of about 1 angstrom thick. As a result, no treatment drift occurred during the treatment because no fluorine diffused through to form Ah 〇 xFy on the dome. Fig. 9 is a perspective view showing another embodiment of the gas distribution ring 4 according to the present invention. The multi-layer gas distribution ring 410 is substantially similar to the structure of the gas distribution ring 3, except for the structure of the gas nozzles 402 and 404. The gas distribution ring 4 10 as shown in Figure 9 includes a first set of nozzles 404 which are similar to the nozzles 3 〇 4 and the second set of nozzles 402 which are angled obliquely toward the chamber dome. Nozzles 402 and 404 are disposed in another configuration in which three nozzles 4〇4 are disposed between adjacent oblique nozzles 402. The first set of nozzles 404 are coupled to a first annular passage (not shown) formed in the gas distribution ring 410, and the second set of nozzles 402 are coupled to a second annular passage formed in the gas distribution ring (shown On page 24 of the first page, the paper size applies to the Chinese National Standard (CNS) A4 specification (21〇X 297 public) ------------i I i I ------ -^ , ---- (Please read the notes on t-face and fill out this page) • ά

). Although 罘9 illustrates a preferred configuration of nozzle 4〇2 and nozzle 4〇4, other configurations of nozzles for which multiple layers of gas are desired may be incurred by the present invention. ^48108 卜第10图 is a partial cross-sectional view of the gas distribution ring 41 0, which shows a second ring of dead body passage: 416 and - oblique nozzle 402. Preferably, the angle of inclination α measured by the plane containing the valve ring 41 is about 15 degrees to about 6 degrees toward the dome of the chamber. As shown in Fig. 10, the angle α is about 45 degrees. Another embodiment of the present invention provides a &apos;group nozzle example that is diagonally inclined by the second mouthpiece (i.e., toward the substrate). Preferably, the bevel angle of the first set of nozzles 4〇4 is about 〇 to about 25 degrees, from about 0 degrees to about 25 degrees from the gas distribution ring 41G toward the substrate. (I, 斜 oblique = = gas distribution ring refers to the treatment gas introduced into the treatment room, with the middle of the thick expansion map at the end, used to introduce the process gas through the oblique direction. According to the example, the deposition of gas with glass (called And the oxygen system is introduced into the stem by the angle 404, and the SiH4 and the ammonia are distributed through the nozzle 4 due to the intermediate thick diffusion pattern, such as gas and phosphorus oxygen, which are distributed on the entire surface of the substrate, thereby improving the deposition uniformity. The multi-layer gas distribution loop is completed at the same time as the gas distribution ring 31 prevents the ceramic dome from being attacked by the gas, because the oblique spray is applied: the I is close to the ceramic dome surface, and the introduction of the processing gas 4 is higher than that through the nozzle 4〇4. Partial pressure. For example, as applied to #, the SiH qi volume on the inner surface of the dome is on the inner surface, preventing the gas from being infused into the voles by the gas...=force causing the dome to blacken, Prevents deposition in the chamber during processing. Ip. Page 25 This paper scale applies to China National Standard (CNS) A4 specifications.

-------ti---- (Please read the note on the back and fill out this page) ϋ 1 I 1248108 A7 _B7__ V. Description of invention () Handling drift of drift and uniformity of plating. Another advantage of the multi-layer gas distribution ring 410 is that the dry layer is deposited at a faster rate because the distance between the inner surface of the ceramic dome and the nozzle for introducing dry gas is reduced. While the invention has been described with respect to the preferred embodiments of the present invention, the scope of the invention is defined by the scope of the following claims. (Please read the notes on the back and fill out this page.) Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives. Page 26 This paper scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm).

Claims (1)

Monthly Repair (More) Original D8 Patent Case Revision 6. Application Patent Range 1. A device for depositing a film on a substrate, comprising at least: a) a processing chamber; b) a plurality of inlets disposed in one a gas distribution ring, wherein the inlets are in a coplanar relationship in the processing chamber; c) one or more first gas nozzles provide a first gas at a first distance from the indoor surface, wherein the first gas Or a plurality of first gas nozzles are respectively disposed in an inlet; and .d) or a plurality of second gas nozzles provide a second gas at a second distance from the indoor surface, wherein the one or more second Gas nozzles are respectively disposed in an inlet. 2. The apparatus of claim 1, wherein the second gas creates a higher portion of pressure adjacent the interior surface to prevent deposition of the first gas on the inner surface of the chamber. 3. The apparatus of claim 1, wherein the processing chamber comprises a high density plasma chemical vapor deposition chamber. Printed by the Intellectual Property Office of the Ministry of Economic Affairs and the Consumers' Cooperatives (please read M on the back of the page and then fill in the page). 4. The device of claim 1, wherein the first gas comprises SiF4 and the second The gas contains SiH4. 5. The apparatus of claim 1, wherein the ratio of the second distance to the first distance is between 0.24 and 0.85. Page 27 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) A8B8C8D8 1248108 VI. Scope of Application The three gas nozzles are placed above the substrate support in a center-aligned manner. 12. The apparatus of claim 1, wherein the one or more first gas nozzles are positioned at different angles to the one or more second gas nozzles. 13. The apparatus of claim 1, wherein the one or more first gas nozzles are at an oblique angle from a surface of the substrate to be treated, and the one or more second gas nozzles are positioned In a plane parallel to the surface of the substrate. 14. An apparatus for distributing a gas in a substrate processing chamber, comprising at least a plurality of inlets disposed on a gas distribution ring, wherein the gas inlets are in common in the substrate processing chamber a planar relationship; b) - or a plurality of first gas nozzles providing a first gas at a first distance from the interior surface, wherein the one or more first gas nozzles are respectively disposed in an inlet; and c) one or The plurality of second gas nozzles provide a second gas at a second distance from the indoor surface, wherein the one or more second gas nozzles are respectively disposed in an inlet, and wherein the second gas is created adjacent to the indoor surface A higher portion of the pressure prevents the first gas from depositing on the inner surface. Page 29 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) ------------------ 丨丨 丨丨丨丨 丨丨丨丨 丨丨-line (please read the note on the back and fill out this page) Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A8 B8 C8 D8 1248108 VI. Patent application scope 15. Equipment as described in claim 14 The ratio between the second distance and the first distance is between 0.24 and 0.85. The apparatus of claim 14, wherein the one or more first gas nozzles are positioned above the substrate support and the one or more second gas nozzles are positioned Around the substrate support. The apparatus of claim 14, wherein the one or more first gas nozzles are disposed at different angles from the one or more second gas nozzles. The apparatus of claim 14, wherein the one or more first gas nozzles are at an oblique angle from a surface of the substrate to be treated, and the one or more second gas nozzles are positioned at In a plane parallel to the surface of the substrate. 19. A method of depositing a film on a substrate in a chemical vapor deposition chamber. The method comprises at least the steps of: a) passing a first gas through a first or a plurality of first distances away from the interior surface of the chamber Introducing a gas nozzle; b) introducing a second gas through a second distance from the indoor surface at a second distance or a plurality of second gas nozzles, wherein the second gas is adjacent to the 30th page of the paper scale applicable to the Chinese national standard ( CNS)A4 specification (210 X 297 mm) ------_ :------------% • nn ϋ n I n I an ϋ n ϋ I n II line _ (please First, read the precautions on the back and fill in this!! The Ministry of Economic Affairs, Intellectual Property Bureau, Staff and Consumer Cooperatives, printed A8 B8 C8 D8 1248108 6. Create a higher part of the pressure on the inner surface of the patent application room to prevent this A gas is deposited on the inner surface; and (please first read the back of the note and then fill out this page) C) Produce the plasma of the process gas. 20. The method of claim 19, further comprising the step of: d) coating the inner surface of the chamber with a dry coating prior to step a). 21. The method of claim 19, wherein the ratio of the second distance to the first distance is between 0.24 and 0.85. 22. The method of claim 19, wherein the first gas is introduced at an angle different from the second gas relative to the surface of the substrate. The method of claim 19, wherein the first gas is introduced at a flow rate between 50 sccm and 80 sccm, and wherein the second gas system is introduced at a flow rate between 5 Osccm and 80 sccm. The method of claim 19, wherein the first gas comprises SiF4 and the second gas comprises SiH4. The method of claim 19, wherein the first gas comprises SiF4 and oxygen and the second gas comprises SiH4 and argon. 26· A method for treating gas separately in a treatment chamber, comprising at least the steps: Page 31 This paper scale applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 48 12 108 Six A8 B8 C8 D8 Patent application </RTI> </ RTI> introducing a first gas at a first distance from the indoor surface via one or more first gas nozzles; and b) at a second distance from the indoor surface via one or more second gas nozzles A second gas is introduced, wherein the τ硪弗-rolling body creates a higher partial pressure at the adjacent indoor surface to prevent the first gas volume from being on the inner surface. The method of claim 26, wherein the ratio between the second distance and the first distance is between 0. 24 and 〇 85. 28. The method of claim 26, wherein the second gas system is introduced at an angle different from the second gas relative to the surface of the substrate. The method of claim 26, wherein the first gas system is introduced at a flow rate between 50 sccm and 80 sccm, and wherein the second gas system is 50 sccm. A flow rate between 80 sccm was introduced. The method of claim 26, wherein the first gas comprises SiF4 and oxygen and the second gas comprises SiH4 and argon. Page 32 This paper scale applies to China National Standard (CNS) A4 specification (21〇x 297 public) i 111111--— I — ----- line (please read the following on the back of the page)