JPH02116118A - Thin-film formation device - Google Patents
Thin-film formation deviceInfo
- Publication number
- JPH02116118A JPH02116118A JP63269738A JP26973888A JPH02116118A JP H02116118 A JPH02116118 A JP H02116118A JP 63269738 A JP63269738 A JP 63269738A JP 26973888 A JP26973888 A JP 26973888A JP H02116118 A JPH02116118 A JP H02116118A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrate holder
- plasma
- auxiliary electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 230000008020 evaporation Effects 0.000 claims abstract description 12
- 239000012495 reaction gas Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は良質な薄膜を形成する装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an apparatus for forming high-quality thin films.
従来、真空蒸着時に反応ガスを導入し、蒸発物と基板の
前方に設けられたコイルに高周波（１３，５６Ｍ）Ｉｚ
）を印加して発生されるプラズマと反応させて膜を形成
するイオンブレーティング法は良く知られている。Conventionally, a reactive gas is introduced during vacuum evaporation, and a high frequency (13,56M) Iz is applied to the evaporated material and a coil provided in front of the substrate.
The ion blating method, in which a film is formed by reacting with the plasma generated by applying a
〔発明が解決しようとする課題］
イオンブレーティングにおいては反応ガスを真空室全体
に導入するために高周波プラズマを発生するときの圧力
を上げると、プラズマが不安定になり易く、また蒸発を
行うために、真空室内を低圧にする必要がある。また、
イオンブレーティングではプラズマと基板との間が離れ
ている場合に、イオン化や反応が不十分になることが考
えられる。[Problem to be solved by the invention] In ion blating, when the pressure is increased when generating high-frequency plasma to introduce a reactive gas into the entire vacuum chamber, the plasma tends to become unstable and evaporation occurs. To do this, it is necessary to maintain a low pressure inside the vacuum chamber. Also,
In ion blating, if there is a distance between the plasma and the substrate, ionization and reaction may become insufficient.
本発明の目的はプラズマ（主にグロー放電）を基板上に
起こすことによってプラズマと蒸発物の反応を促進し、
高速で成膜でき、かつ良質な薄膜を形成できる装置を提
供することにある。The purpose of the present invention is to promote the reaction between plasma and evaporated matter by generating plasma (mainly glow discharge) on a substrate,
The object of the present invention is to provide an apparatus capable of forming a thin film at high speed and of high quality.
前記目的を達成するため、本発明に係る薄膜形成装置に
おいては、真空室内に、蒸発物を放出する蒸発源と、基
板を保持する基板ホルダとを対向させて配設し、プラズ
マ発生用補助電極を前記基板ホルダに隣接させて設置し
、該補助電極と基板ホルダとにより形成される特定の空
間内に反応ガスを供給する配管系を装備したものである
。In order to achieve the above object, in the thin film forming apparatus according to the present invention, an evaporation source that emits evaporated material and a substrate holder that holds a substrate are disposed facing each other in a vacuum chamber, and an auxiliary electrode for plasma generation is provided. is installed adjacent to the substrate holder, and is equipped with a piping system for supplying a reaction gas into a specific space formed by the auxiliary electrode and the substrate holder.
直流あるいは高周波のプラズマ中に分子や原子を通過さ
せると、プラズマとの相互作用により原子や分子は反応
物と未反応物になる。雨音の比は成膜条件によっても変
化するが、イオンブレーティングでは未反応物をゼロに
することは難しい。When molecules or atoms are passed through a direct current or high-frequency plasma, the atoms and molecules become reactants and unreactants due to interaction with the plasma. The ratio of rain sounds changes depending on the film formation conditions, but it is difficult to reduce the amount of unreacted substances to zero in ion blating.
本発明によれば、基板付近に高濃度のグロー放電プラズ
マを発生させることによって蒸発物とプラズマの反応を
より促進することができるようになるため、良質かつ高
速で薄膜が形成できることになる。According to the present invention, by generating highly concentrated glow discharge plasma near the substrate, it becomes possible to further promote the reaction between the evaporated material and the plasma, so that a thin film can be formed with good quality and at high speed.
以下１本発明の詳細な説明する。第１図は本発明の一実
施例の装置を示す図である。Hereinafter, one aspect of the present invention will be explained in detail. FIG. 1 is a diagram showing an apparatus according to an embodiment of the present invention.
装置の真空室１には基板３を保持する加熱ヒータ付基板
ホルダ２と、蒸発物６を放出する蒸発源５とが対向して
配設されている。また、基板ホルダ２にはプラズマ発生
用補助電極４が基板３を取囲むように設置され、基板ホ
ルダ２と補助電極４との間は電気的にバイアス（高周波
あるいは直流）を印加する電源Ｖユが接続されている。In a vacuum chamber 1 of the apparatus, a substrate holder 2 with a heater for holding a substrate 3 and an evaporation source 5 for emitting an evaporated material 6 are disposed facing each other. Further, an auxiliary electrode 4 for plasma generation is installed on the substrate holder 2 so as to surround the substrate 3, and a power supply V unit that applies electrical bias (high frequency or direct current) is connected between the substrate holder 2 and the auxiliary electrode 4. is connected.
前記蒸発源５はタングステンヒータの加熱により蒸発物
６を放出するものであり、蒸発′ｔＡ５と基板ホルダ２
との間にはバイアスを印加する電源■２が接続されてい
る。さらに、補助電極４と基板ホルダ２とにより形成さ
れる特定の空間Ｓ内に反応ガスを供給するため、補助電
極４にはガス吹出口４ａが設けられ、該ガス吹出口４ａ
にはバルブ８を介してガス導入管７が接続しである。ま
た基板ホルダ２の前方位置にはシャッタ９が設置されて
いる。The evaporation source 5 emits evaporation material 6 by heating with a tungsten heater, and the evaporation source 5 and the substrate holder 2
A power supply (2) for applying a bias is connected between the two. Furthermore, in order to supply a reaction gas into a specific space S formed by the auxiliary electrode 4 and the substrate holder 2, the auxiliary electrode 4 is provided with a gas outlet 4a.
A gas introduction pipe 7 is connected through a valve 8. Further, a shutter 9 is installed at a position in front of the substrate holder 2.
この装置によって、−例としてＡＱＮ薄膜を形成する場
合を具体的に説明する。A case in which an AQN thin film is formed using this apparatus will be specifically described as an example.
まず、拡散ポンプあるいはターボポンプと油回転ポンプ
を用いて真空室１内をＩ Ｘ １０−’Ｔｏｒｒ以下ま
で排気する。次に、補助電極４のガス吹出口４ａにガス
を導入するためにバルブ９を開き、高純度のＮ２ガスを
補助電極４と基板ホルダ２とにより形成される特定の空
間Ｓ内に導入し、真空室１内全体の真空度をＩ×１０″
−’ Ｔｏｒｒ程度に設定する。この状態で補助電極４
と基板ホルダ２との間に３００〜４００ｖの直流電圧を
印加してグロー放電を基板３の周辺に起こし、同時に蒸
発源５からＡＱ（蒸発物６）を蒸発させる。その後、シ
ャッタｌＯを開き、基板ホルダ２上に取り付けられたシ
リコン基板３上に１ｉＮ膜を成長させる。First, the inside of the vacuum chamber 1 is evacuated to below I.times.10-' Torr using a diffusion pump or a turbo pump and an oil rotary pump. Next, the valve 9 is opened to introduce gas into the gas outlet 4a of the auxiliary electrode 4, and high-purity N2 gas is introduced into the specific space S formed by the auxiliary electrode 4 and the substrate holder 2. The degree of vacuum in the entire vacuum chamber 1 is I x 10''
-' Set to about Torr. In this state, the auxiliary electrode 4
A direct current voltage of 300 to 400 V is applied between the substrate holder 2 and the substrate holder 2 to cause glow discharge around the substrate 3, and at the same time, AQ (evaporated matter 6) is evaporated from the evaporation source 5. Thereafter, the shutter IO is opened and a 1iN film is grown on the silicon substrate 3 mounted on the substrate holder 2.
本実施例ではこの状態で約１０分間膜形成を行った。こ
のようにして形成されｔ；−ＡＱＮ膜の膜厚は約１−で
あり、その構造は六方晶、Ｃ軸配向膜であった。この場
合には基板３の加熱は行っていない。In this example, film formation was performed in this state for about 10 minutes. The thickness of the t;-AQN film thus formed was approximately 1-, and its structure was a hexagonal, C-axis oriented film. In this case, the substrate 3 is not heated.
なお、約３００°Ｃに加熱されたサファイヤ基板を用い
たときにはエピタキシャル膜が得られた。Note that an epitaxial film was obtained when a sapphire substrate heated to about 300°C was used.
また、この膜の電気機械結合係数を測定しさところ約５
％という値が得られた。この値はマグネトロンスパッタ
法によって製造されたＡＱＮ薄膜と同等かそれ以上の値
である。また、薄膜の組成をＸ線マイクロアナライザで
測定したところほぼ１：１であった・
このように本発明によって低温で良質の薄膜が得られる
ことが分かる。もちろん、この装置によってプラズマを
発生させる反応ガス（以下、プラズマガスという）をＮ
２、蒸発物をボロン（Ｂ）とすれば８Ｎを合成できるし
、プラズマガスを０□、蒸発物をＺｎとすればＺｎＯの
ような酸化物も合成できるし。In addition, the electromechanical coupling coefficient of this film was measured and was approximately 5.
A value of % was obtained. This value is equal to or greater than that of an AQN thin film manufactured by magnetron sputtering. Furthermore, when the composition of the thin film was measured using an X-ray microanalyzer, it was found to be approximately 1:1. Thus, it can be seen that a high quality thin film can be obtained at low temperatures by the present invention. Of course, the reaction gas (hereinafter referred to as plasma gas) that generates plasma by this device is N
2. If the evaporated material is boron (B), 8N can be synthesized, and if the plasma gas is 0□ and the evaporated material is Zn, oxides such as ZnO can also be synthesized.
プラズマガスとしてＣＨい蒸発物をＴｉとすればＴｉＣ
のような炭化物も合成できることはいうまでもない。If the plasma gas is CH and the evaporated material is Ti, it is TiC.
It goes without saying that carbides such as can also be synthesized.
本発明はこのように基板周辺に発生させたグロー放電に
よるプラズマと蒸発物との反応を促進することによって
、低温で良質な薄膜を形成でき、機能性誘電体薄膜や半
導体膜等への応用も可能であるという効果を有する。The present invention can form high-quality thin films at low temperatures by promoting the reaction between plasma and evaporated substances caused by glow discharge generated around the substrate, and can be applied to functional dielectric thin films, semiconductor films, etc. It has the effect that it is possible.
第１図は本発明による一実施例の薄膜形成装置を示す断
面図である。
１・・・真空室 ２・・・基板ホルダ３・
・・基板 ４・・・補助電極５・・・蒸
発源 ６・・・蒸発物７・・・ガス導入管
８・・・バルブ９・・・シャッタFIG. 1 is a sectional view showing a thin film forming apparatus according to an embodiment of the present invention. 1... Vacuum chamber 2... Substrate holder 3.
... Substrate 4 ... Auxiliary electrode 5 ... Evaporation source 6 ... Evaporated material 7 ... Gas introduction pipe 8 ... Valve 9 ... Shutter
Claims (1)
保持する基板ホルダとを対向させて配設し、プラズマ発
生用補助電極を前記基板ホルダに隣接させて設置し、該
補助電極と基板ホルダとにより形成される特定の空間内
に反応ガスを供給する配管系を装備したことを特徴とす
る薄膜形成装置。(1) In a vacuum chamber, an evaporation source that emits evaporated matter and a substrate holder that holds a substrate are arranged facing each other, and an auxiliary electrode for plasma generation is installed adjacent to the substrate holder, and the auxiliary electrode A thin film forming apparatus characterized by being equipped with a piping system for supplying a reaction gas into a specific space formed by a substrate holder and a substrate holder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63269738A JPH02116118A (en) | 1988-10-25 | 1988-10-25 | Thin-film formation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63269738A JPH02116118A (en) | 1988-10-25 | 1988-10-25 | Thin-film formation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02116118A true JPH02116118A (en) | 1990-04-27 |
Family
ID=17476473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63269738A Pending JPH02116118A (en) | 1988-10-25 | 1988-10-25 | Thin-film formation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02116118A (en) |
-
1988
- 1988-10-25 JP JP63269738A patent/JPH02116118A/en active Pending
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