JPH02111873A - Knudsen-type vaporization source device for vapor deposition device - Google Patents
Knudsen-type vaporization source device for vapor deposition deviceInfo
- Publication number
- JPH02111873A JPH02111873A JP25975988A JP25975988A JPH02111873A JP H02111873 A JPH02111873 A JP H02111873A JP 25975988 A JP25975988 A JP 25975988A JP 25975988 A JP25975988 A JP 25975988A JP H02111873 A JPH02111873 A JP H02111873A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- net
- refrigerant container
- cooling
- fixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007740 vapor deposition Methods 0.000 title claims description 4
- 230000008016 vaporization Effects 0.000 title abstract 3
- 238000009834 vaporization Methods 0.000 title abstract 3
- 238000001816 cooling Methods 0.000 claims abstract description 23
- 239000003507 refrigerant Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000001704 evaporation Methods 0.000 claims description 31
- 230000008020 evaporation Effects 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000007738 vacuum evaporation Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 2
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 240000000731 Fagus sylvatica Species 0.000 description 1
- 235000010099 Fagus sylvatica Nutrition 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、分子線エピタキシー装置のような真空蒸着装
置において、蒸発材料を蒸発させる装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an apparatus for evaporating evaporation materials in a vacuum evaporation apparatus such as a molecular beam epitaxy apparatus.
［従来の技術］
従来、この種の真空蒸着装置に使用される蒸発゛源装置
の形式には、大別して二種あり、電子衝撃型と抵抗加熱
型である。前者は、いわゆるカウフマン型エレクトロン
ビームガンに代表されるもので、例えば第４図において
２の符号で示すように、電子銃８を備え、ここから発射
された電子線を磁場による電磁偏向の手段で坩堝に誘導
し、そこの蒸発材料に照射して、蒸発させる形式のもの
である。高融点材料の蒸発に、使用される。また、後者
は、いわゆるクヌードセン型セルに代表されるもので、
例えば、第４図において、３の符号で示すように、坩堝
９の周囲にヒータ１０を配置し、この加熱によって坩堝
の中の材料を加熱、蒸発させる形式のものである。[Prior Art] Conventionally, there are two types of evaporation source devices used in this type of vacuum evaporation device: an electron impact type and a resistance heating type. The former type is typified by the so-called Kaufmann-type electron beam gun, which is equipped with an electron gun 8, as shown by the symbol 2 in FIG. In this type of method, the evaporative material is irradiated and evaporated. Used for evaporating high melting point materials. The latter type is represented by the so-called Knudsen cell,
For example, as shown by reference numeral 3 in FIG. 4, a heater 10 is placed around a crucible 9, and the material in the crucible is heated and evaporated by this heating.
なお、第４図において、１は、真空槽、４は基板ホルダ
、５は、それに装着された基板であり、真空蒸着により
、この表面に薄膜が形成される。６は、シュラウドと呼
ばれる液体窒禦等の冷媒を用いた冷却装置で、蒸発源か
ら発射された特定の分子を両舌させるのに使用される。In FIG. 4, 1 is a vacuum chamber, 4 is a substrate holder, and 5 is a substrate attached thereto, on the surface of which a thin film is formed by vacuum deposition. 6 is a cooling device called a shroud that uses a refrigerant such as liquid nitrogen, and is used to make specific molecules emitted from an evaporation source into both sides.
［発明が解決しようとする課題］
このような真空蒸着装置では、真空槽を１０−５〜１０
−１２Ｔｏｒｒというきわめて真空度の高い雰囲気の中
で真空蒸着を実行しなければならず、そのため、真空雰
囲気を形成するため、真空槽１の内部を数百度の温度に
加熱した状態で、その中を排気する、いわゆるベーキン
グと称する熱処理を併用した排気、減圧手段がとられる
。[Problem to be solved by the invention] In such a vacuum evaporation apparatus, the vacuum chamber has a temperature of 10-5 to 10
Vacuum deposition must be carried out in an extremely high vacuum atmosphere of −12 Torr. Therefore, in order to create a vacuum atmosphere, the inside of the vacuum chamber 1 is heated to a temperature of several hundred degrees. Evacuation and pressure reduction means are used in combination with a heat treatment called baking.
これまで、真空蒸着の対象としてきた金属、半導体等は
、何れもこのベーキングを行なうための熱処理温度より
融点が高く、蒸発前に真空槽１の中で他の要素と共にこ
のベーキング処理を行なうことが可能であった。Until now, metals, semiconductors, etc. that have been subjected to vacuum evaporation have melting points higher than the heat treatment temperature for baking, so it is possible to perform this baking treatment together with other elements in the vacuum chamber 1 before evaporation. It was possible.
ところが、融点が相当低い樹脂等が真空蒸着の蒸発材料
として用いられるようになり、その中には前記ベーキン
グ温度はもとより、常温より融点の低い物質もある。こ
うした材料を蒸発させるためには、前記ベーキング中も
蒸発材料を常温以下の温度に保持し、蒸発を実行すると
きに、蒸発に必要な温度に速やかに加熱する手段をとら
なければならない。However, resins and the like having considerably low melting points have come to be used as evaporation materials for vacuum deposition, and some of these materials have melting points lower than the baking temperature as well as room temperature. In order to evaporate such materials, it is necessary to maintain the evaporation material at a temperature below room temperature during the baking process, and to quickly heat it to the temperature required for evaporation when performing evaporation.
しかし、従来使用されている前記蒸発源装置では、比較
的融点の低い材料に使用されるクヌードセン型セルでも
、蒸発材料を常温以上の温度に加熱することはできても
、蒸発材料をそれ以下の温度に冷却し、必要なときに加
熱するための機能は存していない。However, in the conventional evaporation source device, even in the Knudsen type cell used for materials with relatively low melting points, although it is possible to heat the evaporation material to a temperature above room temperature, it is possible to heat the evaporation material to a temperature lower than that. No functionality exists to cool to temperature and heat when required.
そこで本発明は、前記従来の問題点を解決し、摂氏零下
百数十度以下の温度から摂氏数百度の範囲で温度制御が
可能な蒸発源装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and to provide an evaporation source device that can control the temperature in the range from 100 degrees Celsius or lower to several hundred degrees Celsius.
［課題を解決するための手段］
すなわち、前記本発明の目的は、蒸発材料を収納する坩
堝９と、この坩堝９を囲むようＱｉ３ ｆｉｔされた加
熱手段を備えてなる蒸着装置用クヌードセン型蒸発源装
置において、坩堝９の基部に冷媒容器１１を設け、同冷
媒容器１１に真空系外から液体窒素等の冷媒を供給する
配管１２ａ１１２ｂを接続し、前記冷媒容器１１に、熱
伝導良好な金属線を筒状に編成した冷却ネット１３を連
結し、坩堝９の周囲をこの冷却ネット１３で囲み込むと
共に、その外側に前記加熱手段を配置したことを特徴と
する真空蒸着用クヌードセン型蒸発源装置により達成さ
れる。[Means for Solving the Problems] That is, an object of the present invention is to provide a Knudsen type evaporation source for a vapor deposition apparatus, which comprises a crucible 9 for storing an evaporation material, and a heating means Qi3 fitted to surround the crucible 9. In the apparatus, a refrigerant container 11 is provided at the base of the crucible 9, a pipe 12a112b for supplying a refrigerant such as liquid nitrogen from outside the vacuum system is connected to the refrigerant container 11, and a metal wire with good heat conduction is connected to the refrigerant container 11. Achieved by a Knudsen type evaporation source device for vacuum evaporation, characterized in that cooling nets 13 arranged in a cylindrical shape are connected, the crucible 9 is surrounded by the cooling nets 13, and the heating means is arranged outside of the crucible 9. be done.
［作 用コ
前記本発明による蒸発源装置では、冷媒容器１１に連結
された熱伝導良好な金属線による冷却ネット１３が、坩
堝９の周囲を取り囲んでいおり、その外側にヒータｌＯ
等の加熱手段が配置されているので、前記冷媒容器ｔｉ
に供給された冷媒は、前記冷却ネット１１を介して坩堝
から熱を奪う。また、加熱手段１０は、熱伝導良好な前
記冷却ネッ）１３を介して坩堝９に熱を伝達する。従っ
て、加熱、冷却の何れの場合も熱の伝達が円滑におこな
われ、もって加熱、冷却による温度制御が広い範囲で可
能となり、しかもその温度変化も迅速に行い得る。[Function] In the evaporation source device according to the present invention, a cooling net 13 made of a metal wire with good heat conduction and connected to a refrigerant container 11 surrounds the crucible 9, and a heater lO is placed outside of the cooling net 13.
Since heating means such as
The coolant supplied to the crucible removes heat from the crucible via the cooling net 11. Further, the heating means 10 transmits heat to the crucible 9 via the cooling net 13 which has good heat conduction. Therefore, heat transfer is carried out smoothly in both heating and cooling, making it possible to control temperature over a wide range by heating and cooling, and to change the temperature quickly.
さらに、坩堝９を冷却ネット１１が囲むよう形成されて
いるため、このから坩堝９を引き抜くことによって簡単
に坩堝９をセルから分離し、逆に上記冷却ネッ）１１の
坩堝９を嵌め込むことによって、坩堝９を簡便にセット
できる。Furthermore, since the crucible 9 is formed so as to be surrounded by the cooling net 11, the crucible 9 can be easily separated from the cell by pulling out the crucible 9, and conversely, by fitting the crucible 9 into the cooling net 11, , the crucible 9 can be easily set.
［実 施 例コ
次に、本発明の実施例について、図面を参照しながら、
詳細に説明する。[Example] Next, an example of the present invention will be described with reference to the drawings.
Explain in detail.
坩堝９を嵌め込んで支持するためのリング状の坩堝ホル
ダ１４が円筒形のフレームＩ５の上端に設けられている
。第２図に示すように、このフレーム１５は、フランジ
２２ ａ、 ２２ ｂｓ２２ｃ１ フランジ２２ａ、
２２ｂを連結したタイロッド２０．２０及びベローズ２
１からなるベローフランジ１７の中に収納され、トラン
スファーロッド１６によって、第２図のおいて上下に駆
動される。A ring-shaped crucible holder 14 for fitting and supporting the crucible 9 is provided at the upper end of the cylindrical frame I5. As shown in FIG. 2, this frame 15 includes flanges 22a, 22bs22c1, flange 22a,
Tie rod 20.20 and bellows 2 connected with 22b
1, and is driven vertically in FIG. 2 by a transfer rod 16.
前記ベローフランジ１７の上端のフランジ２２ａには、
フランジ１９ ａｓ １９ ｂｌｌ ９ ｃを備える
ロードロツタユニット１８が連結され、その上端のフラ
ンジ１９ａが真空蒸着を行なうための真空槽（図示せず
）に連結される。そして、前記トランスファーロッド１
６の操作により、坩堝９がこの真空槽に導入または退出
させられる。なお、フランジ１９ｂ、１９ｃは、坩堝９
をこの蒸発源装置に着脱する等の操作を行なうためのも
ので、ここにも他のユニットが結合される。The flange 22a at the upper end of the bellows flange 17 includes:
A load rotor unit 18 having flanges 19 as 19 bll 9 c is connected, and a flange 19a at the upper end thereof is connected to a vacuum chamber (not shown) for performing vacuum deposition. Then, the transfer rod 1
By the operation 6, the crucible 9 is introduced into or removed from the vacuum chamber. Note that the flanges 19b and 19c are connected to the crucible 9.
This unit is used to perform operations such as attaching and detaching the evaporation source to and from the evaporation source device, and other units are also connected here.
前記フレーム１５の中にあって、前記坩堝ホルダ１４の
下には、窒化硼素等の耐熱性材料からなるヒータサポー
ト２３が坩堝９を囲むように配置され、これにヒータ１
０が螺旋状に固定されている。このヒータ１０のリード
線１０ａは、前記ベローフランジ１７の外に引き出され
、電源（図示せず）に接続される。さらに前記ヒータｌ
Ｏの外側には、円筒形の反射筒２４が設けられている。A heater support 23 made of a heat-resistant material such as boron nitride is disposed in the frame 15 and below the crucible holder 14 so as to surround the crucible 9.
0 is fixed in a spiral shape. A lead wire 10a of this heater 10 is drawn out from the bellows flange 17 and connected to a power source (not shown). Furthermore, the heater l
A cylindrical reflecting tube 24 is provided outside the O.
前記フレーム１５の中にあって、ヒータ１０の下には、
ステンレス等からなる円筒形の冷媒容器１１が配置され
、これにはベローフランジ１７の外からその中に液体窒
素等の冷媒を供給するための供給配管１２ａと、これを
排出するための排出配管１２ｂとが連結されている。Inside the frame 15 and below the heater 10,
A cylindrical refrigerant container 11 made of stainless steel or the like is disposed, and includes a supply pipe 12a for supplying a refrigerant such as liquid nitrogen into the bellows flange 17 from outside, and a discharge pipe 12b for discharging the refrigerant. are connected.
この冷媒容器１１の上端には、円柱形の突起を上方に突
出した熱伝導良好な、例えば無酸素銅等からなる冷却ブ
ロック２５が固着され、その前記突起部に、熱伝導良好
な、例えば銅線等を円筒形に組成した冷却ネット１３の
下端が固着されている。この冷却ネット１３は、坩堝９
の外径に適合する形状に整えられ、その上端は円周部が
坩堝ホルダ１４に固着され、この上端と前記冷却ブロッ
ク２５に固着された前記下端との間が前記ヒータ１０の
内側に配置されている。前記坩堝ホルダ１４に坩堝９を
嵌め込んだとき、前記冷却ネット１３が坩堝の外周を密
着した状態で取り囲む。At the upper end of this refrigerant container 11, a cooling block 25 made of, for example, oxygen-free copper with good thermal conductivity and having a cylindrical protrusion projecting upward is fixed. The lower end of a cooling net 13 made of wires etc. in a cylindrical shape is fixed. This cooling net 13 is connected to the crucible 9
The circumference of the upper end is fixed to the crucible holder 14, and the space between this upper end and the lower end fixed to the cooling block 25 is arranged inside the heater 10. ing. When the crucible 9 is fitted into the crucible holder 14, the cooling net 13 tightly surrounds the outer periphery of the crucible.
このように、冷却ネット１３が坩堝９を囲むように形成
されているため、坩堝９を坩堝ホルダ１４に着脱するこ
とによって直ちに坩堝９の交換が可能である。すなわち
、この交換は、ロードロックユニット１８の中で簡便に
、かつ、すばやく行なうことができる。２７は、このと
きに、トランスファーロッド等で坩堝９を保持するため
の、掛は具である。In this way, since the cooling net 13 is formed to surround the crucible 9, the crucible 9 can be replaced immediately by attaching and detaching the crucible 9 to the crucible holder 14. That is, this exchange can be performed easily and quickly within the load lock unit 18. 27 is a hook for holding the crucible 9 with a transfer rod or the like at this time.
２６は、前記坩堝９の下に挿入された熱電対で、その測
温接点が坩堝９の下端に当てられ、坩堝９の温度を測定
する。この熱電対２６の基準接点側は、ベローフランジ
１８から外側に引き出され、測定器（図示せず）に引き
出される。Reference numeral 26 denotes a thermocouple inserted under the crucible 9, and its temperature measuring junction is applied to the lower end of the crucible 9 to measure the temperature of the crucible 9. The reference junction side of this thermocouple 26 is drawn out from the bellows flange 18 and drawn out to a measuring device (not shown).
第３図は、第１図と第２図に示すような蒸発源装置を使
用して、坩堝９を加熱、冷却したとき、前記熱電対２６
にで示された坩堝９の底部における時間−温度の変化を
示したものである。FIG. 3 shows the thermocouple 26 when the crucible 9 is heated and cooled using the evaporation source device shown in FIGS. 1 and 2.
This figure shows the time-temperature change at the bottom of the crucible 9 indicated by .
ここでは、まず、坩堝９をヒータ１０で加熱した後、ヒ
ータｌＯを止めて、冷媒容器１１に冷媒として導入した
液体窒素により冷却した。なおこの場合、坩堝９には石
英硝子製のものを用いた。Here, first, the crucible 9 was heated with the heater 10, then the heater IO was stopped, and the crucible was cooled with liquid nitrogen introduced as a refrigerant into the refrigerant container 11. In this case, the crucible 9 was made of quartz glass.
この結果から明かなように、この実施例では、坩堝９を
−１５７，３°Ｃから３３８．０℃の範囲で温度制御す
ることができた。As is clear from this result, in this example, the temperature of the crucible 9 could be controlled within the range of -157.3°C to 338.0°C.
［発明の効果コ
以上説明した通り、本発明によれば、蒸発源を摂氏零下
百数十度以下の温度から摂氏数百度の範囲で温度制御す
ることが可能な蒸発源装置を提供することができ、もっ
て、常温あるいはそれより低い融点を有する蒸発材料に
対しても、簡便でかつ温度の応答の速い蒸発源装置とし
て適用できる。また、坩堝９の交換も簡便に行える。[Effects of the Invention] As explained above, according to the present invention, it is possible to provide an evaporation source device capable of controlling the temperature of the evaporation source in the range from a hundred and a few dozen degrees Celsius below to several hundred degrees Celsius. Therefore, it can be applied as a simple evaporation source device with quick temperature response even to evaporation materials having a melting point at room temperature or lower. Furthermore, the crucible 9 can be replaced easily.
第１図は、本発明の実施例を示す蒸発源装置の要部桁断
側面図、第２図は、同蒸発源装置の縦断側面図、第３図
は、同実施例による坩堝の時間−温度変化を示すグラフ
、第４図は、真空蒸着装置の全体を示す概略図である。
９・・・坩堝 ＩＯ・・・ヒータ １１・・・冷媒容器
１２ａ１１２ｂ・・・冷媒を供給する配管 １３・・・
冷却ネット
特許出願人 株式会社日本ビーチツク
代 理 人 弁理士 北條 和由
手
続
補
正
魯
事件の表示
昭和６３年特許願第２５９７５９号
発明の名称
蒸着装置用クヌードセン型蒸発源装置
補正をする者
事件との関係 特許出願人
住 所 茨城県勝田市大字勝倉１３１６番地の３氏
名 株式会社日本ビーチツク
４、代理人
住 所 茨城県水戸市五軒町三丁目３番４０号補正の
対象
あるのを削詠しますFIG. 1 is a sectional side view of essential parts of an evaporation source device showing an embodiment of the present invention, FIG. 2 is a longitudinal sectional side view of the same evaporation source device, and FIG. 3 is a time-sectional view of a crucible according to the embodiment. FIG. 4, a graph showing temperature changes, is a schematic diagram showing the entire vacuum evaporation apparatus. 9... Crucible IO... Heater 11... Refrigerant container 12a112b... Piping for supplying refrigerant 13...
Cooling Net Patent Applicant Nippon Beech Tsuku Co., Ltd. Agent Patent Attorney Kazuyoshi Hojo Indication of the Procedural Amendment Ro Case 1986 Patent Application No. 259759 Title of the Invention Relationship with the Knudsen Type Evaporation Source Device Amendment Case for Vapor Deposition Apparatus Patent applicant address: Mr. 3, 1316 Katsukura, Katsuta City, Ibaraki Prefecture
Name: Nippon Beach Tsuku 4 Co., Ltd., Agent address: 3-3-40 Gokenmachi, Mito City, Ibaraki Prefecture Subject to amendment is deleted.
Claims (1)
置された加熱手段を備えてなる蒸着装置用クヌードセン
型蒸発源装置において、坩堝９の基部に冷媒容器１１を
設け、同冷媒容器１１に真空系外から液体窒素等の冷媒
を供給する配管１２ａ、１２ｂを接続し、前記冷媒容器
１１に、熱伝導良好な金属線を筒状に編成した冷却ネッ
ト１３を連結し、坩堝９の周囲をこの冷却ネット１３で
囲み込むと共に、その外側に前記加熱手段を配置したこ
とを特徴とする真空蒸着用クヌードセン型蒸発源装置。In a Knudsen type evaporation source device for a vapor deposition apparatus comprising a crucible 9 for storing an evaporation material and a heating means arranged to surround the crucible 9, a refrigerant container 11 is provided at the base of the crucible 9, and a refrigerant container 11 is provided at the base of the crucible 9. Pipes 12a and 12b for supplying a refrigerant such as liquid nitrogen from outside the vacuum system are connected, and a cooling net 13 made of metal wires with good heat conduction is connected to the refrigerant container 11 to surround the crucible 9. A Knudsen type evaporation source device for vacuum evaporation, characterized in that it is surrounded by the cooling net 13 and the heating means is arranged outside of the cooling net 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25975988A JPH02111873A (en) | 1988-10-15 | 1988-10-15 | Knudsen-type vaporization source device for vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25975988A JPH02111873A (en) | 1988-10-15 | 1988-10-15 | Knudsen-type vaporization source device for vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02111873A true JPH02111873A (en) | 1990-04-24 |
| JPH0516400B2 JPH0516400B2 (en) | 1993-03-04 |
Family
ID=17338564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25975988A Granted JPH02111873A (en) | 1988-10-15 | 1988-10-15 | Knudsen-type vaporization source device for vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02111873A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5168543A (en) * | 1991-04-05 | 1992-12-01 | The Boeing Company | Direct contact heater for vacuum evaporation utilizing thermal expansion compensation means |
| WO2003079420A1 (en) * | 2002-03-19 | 2003-09-25 | Innovex. Inc. | Evaporation source for deposition process and insulation fixing plate, and heating wire winding plate and method for fixing heating wire |
| JP2014237885A (en) * | 2013-06-10 | 2014-12-18 | 長州産業株式会社 | Vapor deposition source |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140048824A1 (en) | 2012-08-15 | 2014-02-20 | Epistar Corporation | Light-emitting device |
-
1988
- 1988-10-15 JP JP25975988A patent/JPH02111873A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5168543A (en) * | 1991-04-05 | 1992-12-01 | The Boeing Company | Direct contact heater for vacuum evaporation utilizing thermal expansion compensation means |
| WO2003079420A1 (en) * | 2002-03-19 | 2003-09-25 | Innovex. Inc. | Evaporation source for deposition process and insulation fixing plate, and heating wire winding plate and method for fixing heating wire |
| JP2014237885A (en) * | 2013-06-10 | 2014-12-18 | 長州産業株式会社 | Vapor deposition source |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0516400B2 (en) | 1993-03-04 |
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