JPH02106981A - Perfect adhesion type image sensor - Google Patents
Perfect adhesion type image sensorInfo
- Publication number
- JPH02106981A JPH02106981A JP63261022A JP26102288A JPH02106981A JP H02106981 A JPH02106981 A JP H02106981A JP 63261022 A JP63261022 A JP 63261022A JP 26102288 A JP26102288 A JP 26102288A JP H02106981 A JPH02106981 A JP H02106981A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photodetector
- receiving element
- image sensor
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 9
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 4
- 239000013585 weight reducing agent Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- GSDLWVWZLHUANO-UHFFFAOYSA-N zinc;manganese(2+);disulfide Chemical compound [S-2].[S-2].[Mn+2].[Zn+2] GSDLWVWZLHUANO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、画像を原寸大で読取る完全密着型イメージセ
ンサ、特に結像用のロッドレンズを省略して光源と受光
素子とを一体化した完全密着型イメージセンサに関する
ものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention is a fully contact type image sensor that reads images in actual size, and in particular, a light source and a light receiving element are integrated by omitting a rod lens for imaging. This relates to a fully contact type image sensor.
（従来の技術）
従来、このような分野の技術としては、日経メカニカル
（１９８６−１２−１＞日経マグロウヒル社「光路が短
い密着型イメージセンサＯＡ機器小型化の切り札に、Ｐ
、７１−７８に記載されるものがあった。以下、その構
成を図を用いて説明する。(Conventional technology) Conventionally, as a technology in this field, Nikkei Mechanical (1986-12-1>Nikkei McGraw-Hill Co., Ltd.) "Contact image sensor with short optical path is the trump card for downsizing OA equipment,"
, 71-78. The configuration will be explained below using figures.
第２図は従来の密着型イメージセンサの一構成例を示す
図である。FIG. 2 is a diagram showing an example of the configuration of a conventional contact type image sensor.
この密着型イメージセンサは、原稿１を照射するための
発光ダイオード（以下、ＬＥＤという）アレイ２、結像
用のロッドレンズアレイ３、及び光／電気変換用の受光
素子４より構成されているる。そして、ＬＥＤアレイ２
からの出射光で原稿１を照射すると、その原稿１の画像
がロッドレンズアレイ３を通して受光素子４に結像され
、その受光素子４で電気信号に変換されて読み出される
。This contact image sensor is composed of a light emitting diode (hereinafter referred to as LED) array 2 for illuminating a document 1, a rod lens array 3 for imaging, and a light receiving element 4 for optical/electrical conversion. . And LED array 2
When the original 1 is irradiated with light emitted from the original 1, an image of the original 1 is formed on the light receiving element 4 through the rod lens array 3, and is converted into an electric signal by the light receiving element 4 and read out.
この種の密着型イメージセンサでは、ロッドレンズアレ
イ３を用いて原稿１の画像を原刈大で読取るので、縮小
光学系を用いたイメージセンサと比べて、光路が大幅に
短くなり、複写機やファクシミリ等の画像読取装置を小
型化できる。This type of close-contact image sensor uses the rod lens array 3 to read the image of the document 1 in a large-scale manner, so compared to an image sensor using a reduction optical system, the optical path is much shorter, and it can be used in copying machines and Image reading devices such as facsimiles can be downsized.
ところが、ロッドレンズアレイ３を用いているので、小
型、軽量化の点で充分満足できるものではなかった。そ
こで、ロッドレンズアレイ３を省略した完全密着型イメ
ージセンサが提案されている。However, since the rod lens array 3 is used, it is not completely satisfactory in terms of size and weight reduction. Therefore, a complete contact type image sensor in which the rod lens array 3 is omitted has been proposed.
第３図は従来の完全密着型イメージセンサの一構成例を
示す図である。FIG. 3 is a diagram showing an example of the configuration of a conventional complete contact type image sensor.
この完全密着型イメージセンサは、ＬＥＤアレイ１０及
びセンサ本体２０より構成されている。This complete contact type image sensor is composed of an LED array 10 and a sensor main body 20.
センサ本体２０は、ガラス基板２１を有し、そのガラス
基板２１の底面に、電極２２、アモルファスシリコン（
以下、ａ−３ｉという）からなる受光素子２３、透明電
極２４、及び電極２５が積層状態に形成されている。受
光素子２３等の中央には光通過用の窓２６が設けられ、
さらにそれらの受光素子２３等が透明保護層２７で覆わ
れている。The sensor main body 20 has a glass substrate 21, and an electrode 22 and amorphous silicon (
A light receiving element 23 (hereinafter referred to as a-3i), a transparent electrode 24, and an electrode 25 are formed in a laminated state. A window 26 for light passage is provided in the center of the light receiving element 23, etc.
Furthermore, those light receiving elements 23 and the like are covered with a transparent protective layer 27.
この透明保護層２７の下には、原稿２８が置かれる。そ
して、ＬＥＤアレイ１０により、ガラス基板２１、窓２
６及び透明保護層２７を通して原稿２８を照射すると、
その原稿２８の画像が透明保護層２７を通して受光素子
２３で電気信号に変換される。An original 28 is placed under this transparent protective layer 27. Then, the LED array 10 connects the glass substrate 21 and the window 2.
When the original 28 is irradiated through 6 and the transparent protective layer 27,
The image of the original 28 is converted into an electrical signal by the light receiving element 23 through the transparent protective layer 27.
この完全密着型のイメージセンサでは、ロッドレンズア
レイを省略したので、小型、軽量化が図れると共に、ロ
ッドレンズアレイ内での光景損失がないので、受光素子
２３の出力も大きくなり、信号対雑音比（Ｓ／Ｎ比）が
向上する。In this fully contact type image sensor, the rod lens array is omitted, so it can be made smaller and lighter, and since there is no sight loss within the rod lens array, the output of the light receiving element 23 is also increased, and the signal-to-noise ratio is (S/N ratio) is improved.
（発明が解決しようとする課Ｍ）
しかしながら、第３図の完全密着型イメージセンサでは
、光源であるＬＥＤアレイ１０と、受光素子２３側のセ
ンサ本体２０とが、個別に構成されているため、小型、
軽量化に限界があった。その上、ユニットとしてイメー
ジセンサを組立てる場合、ＬＥＤアレイ１０とセンサ本
体２０との取付は位置の調整を行わなければならず、そ
の調整が煩雑であり、しかも調整不十分なときには、受
光素子２３への入射光量が少なくなって読取り精度が低
下し、それらを解決することが困難であった。(Problem M to be Solved by the Invention) However, in the fully contact type image sensor shown in FIG. small size,
There were limits to weight reduction. Furthermore, when assembling the image sensor as a unit, the positions of the LED array 10 and the sensor main body 20 must be adjusted, and the adjustment is complicated. The amount of incident light decreases and the reading accuracy decreases, making it difficult to solve these problems.
本発明は、前記従来技術が持っていた課題として、小型
、軽量化に限界がある点、及び光源とセンサ本体との取
付は位置の調整の煩雑さの点について解決した完全密着
型イメージセンサを提供するものである。The present invention provides a fully contact image sensor that solves the problems of the prior art, such as the limitations in size and weight reduction, and the complexity of adjusting the position of the light source and sensor body. This is what we provide.
（課題を解決するための手段）
本発明は前記課題を解決するために、光を照射して画像
を原寸大で電気的に読取る完全密着型イメージセンサに
おいて、このイメージセンサを少なくとも、素子搭載用
の基板と、前記基板上に形成された受光素子と、前記受
光素子内の所定領域に形成された穴と、前記穴内に形成
された発光素子と、前記受光素子及び発光素子上に被着
された透光性の保護膜とで、構成したものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention provides a complete contact type image sensor that irradiates light and electrically reads an image in its original size. a substrate, a light receiving element formed on the substrate, a hole formed in a predetermined area in the light receiving element, a light emitting element formed in the hole, and a light receiving element deposited on the light receiving element and the light emitting element. It is composed of a transparent protective film and a transparent protective film.
（作用）
本発明によれば、以上のように完全密着型イメージセン
サを構成したので、同一基板上に形成された発光素子及
び受光素子は、一体止による小型、軽量化を向上させる
働きをする。さらに、発光素子が形成される穴は、その
発光素子と受光素子間における配置関係を製造プロセス
の段階において高精度に設定可能にさせ、組立て作業時
における位置調整を不要にさせる働きをする。従って、
前記課題を除去できるのである。(Function) According to the present invention, since the fully contact type image sensor is configured as described above, the light emitting element and the light receiving element formed on the same substrate work to improve the size and weight reduction by integrally fixing them. . Furthermore, the hole in which the light-emitting element is formed allows the positional relationship between the light-emitting element and the light-receiving element to be set with high precision during the manufacturing process, and serves to eliminate the need for position adjustment during assembly work. Therefore,
The above problem can be eliminated.
（実施例）
第１図（１）、（２＞は本発明の一実施例を示すもので
、同図（１）は完全密着型イメージセンサの１ドツト分
の概略平面図、及び同図（２）はそのＡ−Ａ線断面図で
ある。(Example) Figures 1 (1) and (2) show an example of the present invention, and Figure 1 (1) is a schematic plan view of one dot of a fully contact type image sensor, and Figure 1 (1) is a schematic plan view of one dot of a fully contact type image sensor. 2) is a sectional view taken along line A-A.
この完全密着型イメージセンサは、ガラス板、樹脂板、
絶縁被覆された金属板等の絶縁性の基板３０を有し、そ
の基板３０上には、クロム等からなる共通電極３１が形
成されている。この共通電極３１は、基板３０が透光性
の材料で作られている場合には、非透光性の遮光材料で
形成される。This fully contact type image sensor can be used with glass plates, resin plates,
It has an insulating substrate 30 such as an insulated metal plate, and a common electrode 31 made of chromium or the like is formed on the substrate 30. If the substrate 30 is made of a light-transmitting material, the common electrode 31 is formed of a non-light-transmitting light-shielding material.
共通電極３１上には、光を電気に変換するための水素化
アモルファスシリコン（ａ−８ｉ：Ｈ）等からなる膜状
の受光素子３２がプラズマＣＶＤ（化学的気相成長）、
エレクトロン・サイクロトロン・レゾナンス（ＥＣＲ）
ＣＶＤ、光ＣＶＤ、スパッタ等で形成されている。受光
素子３２上には、酸化インジウムスズ（ＩＴＯ）等から
なる透光性の受光素子用個別電極３３がスパッタ等で形
成されている。これらの共通電極（金属）３１／受光素
子（半導体）３２／個別電極（金属）３３という積層構
造により、受光素子機能が発揮される。On the common electrode 31, a film-like light receiving element 32 made of hydrogenated amorphous silicon (a-8i:H) or the like for converting light into electricity is formed by plasma CVD (chemical vapor deposition) or the like.
Electron Cyclotron Resonance (ECR)
It is formed by CVD, photo-CVD, sputtering, or the like. On the light-receiving element 32, a light-transmitting individual electrode 33 for the light-receiving element made of indium tin oxide (ITO) or the like is formed by sputtering or the like. The laminated structure of common electrode (metal) 31/light receiving element (semiconductor) 32/individual electrode (metal) 33 provides the light receiving element function.
受光素子３２の例えば中央に位置する箇所の個別電極３
３及び受光素子３２には、発光素子形成用の六３４がエ
ツチング等で形成されている。受光素子３２及び別個電
極３３上には、ポリイミド樹脂等からなる透光性の絶縁
膜３４がプラズマＣＶＤ、スパッタ等により被着され、
その絶縁膜３４を介して六３４内に発光素子３５が形成
されている。発光素子３５は、電気を光に変換するため
のもので、ジンクサルファイド・マンガン（ＺｎＳ：Ｍ
ｎ＞等からなり、蒸着、スパッタ等で形成され、その上
に、絶縁膜３６が選択的に被着されている。これらの絶
縁膜３３．３６で発光素子３５をはさんだ構造により、
発光素子としての機能を発揮する。発光材料として例え
ばＺｎＳ ：Ｍｎを用いた場合、そのＺｎＳ：Ｍｎの発
光する光における発光ピークの波長が可視領域なので、
受光素子３２を形成する例えばａ−３ｉ：Ｈの怒度が可
視光領域でピークを持つのと適合する。なお、絶縁膜３
４は、受光素子３２と発光素子３５とを電気的に絶縁す
る機能を有すると共に１発光素子材料としてＺｎＳ：Ｍ
ｎ系を用いた時には発光素子（即ち、エレクトロルミネ
センス（ＥＬ）素子）自体の絶縁膜として機能する。Individual electrode 3 at a location located, for example, in the center of light receiving element 32
3 and the light receiving element 32, a six 34 for forming a light emitting element is formed by etching or the like. A light-transmitting insulating film 34 made of polyimide resin or the like is deposited on the light-receiving element 32 and the separate electrode 33 by plasma CVD, sputtering, or the like.
A light emitting element 35 is formed inside the device 634 with the insulating film 34 interposed therebetween. The light emitting element 35 is for converting electricity into light and is made of zinc sulfide manganese (ZnS:M
n>, etc., and is formed by vapor deposition, sputtering, etc., and an insulating film 36 is selectively deposited thereon. Due to the structure in which the light emitting element 35 is sandwiched between these insulating films 33 and 36,
It functions as a light emitting element. For example, when ZnS:Mn is used as a luminescent material, the wavelength of the emission peak of the light emitted by ZnS:Mn is in the visible range, so
This is compatible with the fact that, for example, the intensity of a-3i:H forming the light receiving element 32 has a peak in the visible light region. Note that the insulating film 3
4 has a function of electrically insulating the light-receiving element 32 and the light-emitting element 35, and also uses ZnS:M as a light-emitting element material.
When an n-based material is used, it functions as an insulating film of the light emitting element (ie, electroluminescence (EL) element) itself.
絶縁膜３４．３６上には、ＩＴＯ等からなる透光性の発
光素子用個別電極３７が蒸着、スパッタ等で形成されて
いる。発光素子３２、発光素子３５、及び個別電極３７
等の上には、それらを保護するためのポリイミド樹脂等
からなる透光性の絶縁性保護膜３８が被着され、その保
護膜３８と対向して原稿３９がセットされる。On the insulating films 34 and 36, light-transmitting individual electrodes 37 for light emitting elements made of ITO or the like are formed by vapor deposition, sputtering, or the like. Light emitting element 32, light emitting element 35, and individual electrode 37
A light-transmitting insulating protective film 38 made of polyimide resin or the like is applied to protect the originals 39 , and an original 39 is set facing the protective film 38 .
次に、動作を説明する。Next, the operation will be explained.
先ず、共通電極３１は受光素子３２と発光素子３５に対
して兼用に使うためにグラウンドに接続し、受光素子用
個別電極３３に負の電圧を、発光素子用個別電極３７に
正の電圧をそれぞれ印加する。すると、発光素子３５が
発光し、その出射光が第１図（２）の矢印で示すように
、絶縁膜３６、個別電極３７及び保ＩＭ３８を通して原
稿３９を照射する。原稿３つの画像は、保護膜３８、個
別電極３７及び絶縁膜３４を通して受光素子３２で電気
信号に変換され、読み出される。First, the common electrode 31 is connected to the ground in order to be used for both the light receiving element 32 and the light emitting element 35, and a negative voltage is applied to the individual electrode 33 for the light receiving element, and a positive voltage is applied to the individual electrode 37 for the light emitting element. Apply. Then, the light emitting element 35 emits light, and the emitted light irradiates the original 39 through the insulating film 36, the individual electrodes 37, and the protective IM 38, as shown by the arrow in FIG. 1(2). The images of the three originals are converted into electrical signals by the light receiving element 32 through the protective film 38, the individual electrodes 37, and the insulating film 34, and are read out.
本実施例では、次のような利点を有している。This embodiment has the following advantages.
（ａ） 基板３０上に受光素子３２を形成し、その受
光索子３２の六３４内に発光素子３６を形成してそれら
を一体化しているので、センサユニット全体の小型、軽
量化を著しく向上できる。(a) Since the light-receiving element 32 is formed on the substrate 30 and the light-emitting element 36 is formed within the 634 of the light-receiving cable 32 to integrate them, the overall size and weight of the sensor unit is significantly improved. can.
（ｂ） 受光素子３２と発光素子３５とが同一基板３
０上に形成されているため、製造プロセス時において受
光素子３２と発光素子３６を的確な配置位置で精度良く
形成できる。従って、従来のような光源と受光素子との
組立て作業時における位置調整という煩雑な作業が省略
でき、製造工程を簡素化できると共に、光軸合致精度の
向上により、信頼性を高めることができる。(b) The light receiving element 32 and the light emitting element 35 are on the same substrate 3
0, it is possible to form the light receiving element 32 and the light emitting element 36 with high precision at the correct position during the manufacturing process. Therefore, the complicated work of position adjustment during assembly of the light source and light-receiving element, which is conventional, can be omitted, the manufacturing process can be simplified, and reliability can be increased by improving the precision of alignment of the optical axes.
（ｃ） 発光素子３５と原稿３９との距離が短くなる
ので、原稿３９への入射光が強くなり、Ｓ／Ｎ比が著し
く向上する。その上、受光素子３２の六３４内に絶縁Ｍ
３４を介して発光素子３５が形成されているため、光量
損失が少なくて光の出射効率が高く、低消費電力化も期
待できる。(c) Since the distance between the light emitting element 35 and the original 39 is shortened, the light incident on the original 39 becomes stronger, and the S/N ratio is significantly improved. Moreover, there is an insulation M in the six 34 of the light receiving element 32.
Since the light emitting element 35 is formed through the light emitting element 34, there is little light loss, the light output efficiency is high, and low power consumption can be expected.
（ｄ） 共通電極３１は、受光素子３２及び発光素子
３５に兼用されているため、電極本数を削減できる。(d) Since the common electrode 31 is used for both the light receiving element 32 and the light emitting element 35, the number of electrodes can be reduced.
なお、本発明は図示の実施例に限定されず、種々の変形
が可能である。その変形例としては、例えば次のような
ものがある。Note that the present invention is not limited to the illustrated embodiment, and various modifications are possible. Examples of such modifications include the following.
（ｉ） 受光素子３２及び発光素子３５は、図示以外
の種々の材料で形成できる。(i) The light receiving element 32 and the light emitting element 35 can be formed of various materials other than those shown.
例えば、第４図は第１図（２）における発光素子箇所の
断面図であるが、この図に示すように、発光素子３５Ａ
をアモルファス・シリコン・カーバイド（ａ−８ｉＣ）
からなる３層のｐ−１−ｎ接合、あるいはｎ−１−ｐ接
合で構成してもよい。For example, FIG. 4 is a cross-sectional view of the light emitting element location in FIG. 1 (2), and as shown in this figure, the light emitting element 35A
Amorphous silicon carbide (a-8iC)
It may be constructed of a three-layer p-1-n junction or an n-1-p junction.
この場合、絶縁ｗＡ３４を形成した後、六３４の低部の
絶縁膜３４をエツチングして共通電極３１の一部を露出
させ、その上に発光素子３５ＡをプラズマＣＶＤ、スパ
ッタ等により形成し、さらにその上に個別電極３７を形
成すればよい。なお、ａ−８ｉＣは、発光する光におけ
る発光ピークの波長が可視領域なので、受光材料として
例えばａ −３ｉ ：Ｈの感度が可視光領域でピークを
持つのと適合する。In this case, after forming the insulating wA 34, the insulating film 34 at the lower part of the 634 is etched to expose a part of the common electrode 31, and the light emitting element 35A is formed thereon by plasma CVD, sputtering, etc. Individual electrodes 37 may be formed thereon. Note that a-8iC has an emission peak wavelength in the visible region, so it is compatible with the sensitivity of a-3i:H, which has a peak in the visible light region, as a light-receiving material.
（ｉｉ） 共通電極３１及び個別電極３３．３７は、
受光索子３２及び発光素子３５の配置状態や形状等の変
更に応じて、種々の配置や形状に変形できる。(ii) The common electrode 31 and the individual electrodes 33.37 are
According to changes in the arrangement and shape of the light-receiving cable 32 and the light-emitting element 35, various arrangements and shapes can be obtained.
（発明の効果）
以上詳細に説明したように、本発明によれば、基板上に
受光素子を形成し、その受光素子の穴内に発光素子を形
成した一体構造であるため、全体の小型、軽量化を著し
く向上できると共に、発光素子と受光素子を的確な配置
位置で精度良く形成でき、それによって製造工程の簡素
化と信頼性の向上が図れる。発光素子と原稿との距離が
短くなるので、Ｓ／Ｎ比が著しく向上し、その上、受光
素子の穴内に発光素子が形成されているため、出射効率
が高く、低消費電力化も期待できる。さらに、共通電極
は発光素子及び受光素子に兼用されているため、電極本
数の削減という効果も期待できる。(Effects of the Invention) As described in detail above, according to the present invention, the integrated structure includes a light-receiving element formed on a substrate and a light-emitting element formed in the hole of the light-receiving element. In addition, the light-emitting element and the light-receiving element can be formed with high accuracy in the correct arrangement position, thereby simplifying the manufacturing process and improving reliability. Since the distance between the light emitting element and the document is shortened, the S/N ratio is significantly improved.In addition, since the light emitting element is formed within the hole of the light receiving element, output efficiency is high and power consumption can be expected to be reduced. . Furthermore, since the common electrode is used for both the light emitting element and the light receiving element, an effect of reducing the number of electrodes can be expected.
第１図（１）、（２）は本発明の実施例を示すもので、
同図（１）は完全密着型イメージセンサの概略の平面図
、及び同図（２）は同図（１）のＡ−Ａ線断面図、第２
図は従来の密着型イメージセンサの構成図、第３図は従
来の完全密着型スメージセンサの構成図、第４図は第１
図（２）の発光素子箇所の断面図である９
３０・・・・・・基板、３１・・・・・・共通電極、３
２・・・・・・受光素子、３３．３７・・・・・・個別
電極、３４・・・・・・穴、３５．３５Ａ・・・・・・
発光素子、３８・・・・・・保護膜、３９・・・・・・
原稿。Figures 1 (1) and (2) show embodiments of the present invention.
Figure (1) is a schematic plan view of a fully contact type image sensor, and Figure (2) is a cross-sectional view taken along line A-A in Figure (1).
The figure is a block diagram of a conventional contact type image sensor, Figure 3 is a block diagram of a conventional full contact type smage sensor, and Figure 4 is a block diagram of a conventional full contact type image sensor.
9 is a cross-sectional view of the light emitting element in Figure (2) 30...Substrate, 31...Common electrode, 3
2... Light receiving element, 33.37... Individual electrode, 34... Hole, 35.35 A...
Light emitting element, 38... Protective film, 39...
Manuscript.
Claims (1)
イメージセンサにおいて、 素子搭載用の基板と、前記基板上に形成された光／電気
変換用の受光素子と、 前記受光素子内の所定領域に形成された穴と、前記穴内
に形成された電気／光変換用の発光素子と、 前記受光素子及び発光素子上に被着された透光性の保護
膜とを、 備えたことを特徴とする完全密着型イメージセンサ。[Scope of Claims] A fully contact image sensor that irradiates light and electrically reads an image in its original size, comprising: a substrate for mounting an element; a light-receiving element for optical/electrical conversion formed on the substrate; , a hole formed in a predetermined area within the light-receiving element, a light-emitting element for electricity/light conversion formed in the hole, and a transparent protective film deposited on the light-receiving element and the light-emitting element. A fully contact image sensor that is equipped with the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26102288A JPH0758767B2 (en) | 1988-10-17 | 1988-10-17 | Perfect contact image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26102288A JPH0758767B2 (en) | 1988-10-17 | 1988-10-17 | Perfect contact image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02106981A true JPH02106981A (en) | 1990-04-19 |
| JPH0758767B2 JPH0758767B2 (en) | 1995-06-21 |
Family
ID=17355960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26102288A Expired - Lifetime JPH0758767B2 (en) | 1988-10-17 | 1988-10-17 | Perfect contact image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0758767B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009283941A (en) * | 2008-05-21 | 2009-12-03 | Gwangju Inst Of Science & Technology | Reflective optical sensor device |
-
1988
- 1988-10-17 JP JP26102288A patent/JPH0758767B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009283941A (en) * | 2008-05-21 | 2009-12-03 | Gwangju Inst Of Science & Technology | Reflective optical sensor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0758767B2 (en) | 1995-06-21 |
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