JPH02106077A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH02106077A JPH02106077A JP63258991A JP25899188A JPH02106077A JP H02106077 A JPH02106077 A JP H02106077A JP 63258991 A JP63258991 A JP 63258991A JP 25899188 A JP25899188 A JP 25899188A JP H02106077 A JPH02106077 A JP H02106077A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- scattering
- photoelectric conversion
- photo
- transparent conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 238000000149 argon plasma sintering Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000284 extract Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000003190 augmentative effect Effects 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- RWDBMHZWXLUGIB-UHFFFAOYSA-N [C].[Mg] Chemical compound [C].[Mg] RWDBMHZWXLUGIB-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、透光性基板上に透明電橋を介して形成される
非晶質または多結晶半導体層を光電変損層とする太陽電
池等の光電変換装置に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a solar cell in which a photoelectric loss layer is an amorphous or polycrystalline semiconductor layer formed on a transparent substrate via a transparent electric bridge. The present invention relates to photoelectric conversion devices such as the following.
光電変換装置として最もよく知られているのは非晶質シ
リコン（以下ａ−５ＩＧＨと記す）を用いた太陽電池で
ある。第２図はそのような太陽電池の単位素子を示し、
ガラス基板ｌ上に熱ＣＶＤ法等の手法で透明導電膜から
なる第一電極２を形成し、これを基体としてその上にｐ
形ａ −３１：Ｃ！Ｈ膜３ドープしないａ−ＳＩ：Ｈ膜
４およびｎ形ａ −Ｓｉ：Ｈ膜５を順次プラズマＣＶＤ
等の手法により積層し、さらにその上部には、金属から
なる第二電極（裏面反射電極）６を蒸着やスパッタリン
グ等の手法により形成したものである。この太陽電池に
ガラス基板から入力した光７は非晶質半導体層 （主と
してａ−５ｉ：Ｈ膜４）で吸収され、残った長波長光は
第二電極６で反射、散乱され、反射光７１として再び非
晶質半導体層に吸収される。これらの光によって生ずる
光電流は第一電極２の端部に備えられた端子２１と第二
電極６から取出される。この場合光を散乱させて非晶質
半導体層での吸収率を高めるため、透明導電膜からなる
第一電極２の表面に凹凸を形成し、それに応じて第二電
−−ｎ形ａ−５１＋Ｈ膜５との界面も凹凸となるように
しである。The most well-known photoelectric conversion device is a solar cell using amorphous silicon (hereinafter referred to as a-5IGH). Figure 2 shows a unit element of such a solar cell,
A first electrode 2 made of a transparent conductive film is formed on a glass substrate l by a method such as a thermal CVD method, and a p
Form a-31:C! H film 3 undoped a-SI:H film 4 and n-type a-Si:H film 5 are sequentially plasma CVD
A second electrode (rear surface reflective electrode) 6 made of metal is formed on top of the layer by a method such as vapor deposition or sputtering. The light 7 input into this solar cell from the glass substrate is absorbed by the amorphous semiconductor layer (mainly the a-5i:H film 4), and the remaining long wavelength light is reflected and scattered by the second electrode 6, and the reflected light 71 It is absorbed into the amorphous semiconductor layer again. Photocurrent generated by these lights is taken out from the terminal 21 provided at the end of the first electrode 2 and the second electrode 6. In this case, in order to scatter light and increase the absorption rate in the amorphous semiconductor layer, irregularities are formed on the surface of the first electrode 2 made of a transparent conductive film, and the second electrode 2 is accordingly The interface with the film 5 is also made uneven.
第３図は、第２図に示したような太陽電池の単位素子を
複数個配列し、第二電極の端部を隣接素子の第一電極の
端部に接触させることによって各素子を直列接続した充
電変換装置である。この装置では裏面の第二電極を腐食
より守るために、絶縁性樹脂層１１と耐水性フィルム１
２により封止されている。Figure 3 shows a method in which a plurality of solar cell unit elements as shown in Figure 2 are arranged, and each element is connected in series by bringing the end of the second electrode into contact with the end of the first electrode of an adjacent element. This is a charging conversion device. In this device, an insulating resin layer 11 and a water-resistant film 1 are used to protect the second electrode on the back side from corrosion.
It is sealed by 2.
従来装置においては、ガラス基板上に形成された透明導
電膜よりなる第−ｍ掻の表面形状により入射した光７お
よび反射光７１の散乱度が決定され、また裏面金属電極
と非晶質半導体層の反射率により反射光をいかに利用出
来るかが決定されていた。In the conventional device, the degree of scattering of the incident light 7 and the reflected light 71 is determined by the surface shape of the -mth layer made of a transparent conductive film formed on a glass substrate, and the degree of scattering of the incident light 7 and the reflected light 71 is determined by the surface shape of the -mth layer made of a transparent conductive film formed on a glass substrate. How the reflected light can be used was determined by the reflectance of the light.
しかし、散乱度を向上させるため第一電極の表面凹凸を
大きくしすぎると、ピンホール等の欠陥が発生し、また
大面積にわたって均一なものを得ることが難しいという
問題があった。さらには、アルミニウム等の銀に比して
安価な金属を第二電極６に用いた場合は、その反射率は
４０〜５０％と低くなってしまうといった問題があった
。However, if the surface irregularities of the first electrode are made too large in order to improve the degree of scattering, defects such as pinholes occur, and it is difficult to obtain a uniform surface over a large area. Furthermore, when a metal such as aluminum, which is cheaper than silver, is used for the second electrode 6, there is a problem that the reflectance thereof becomes as low as 40 to 50%.
本発明の！１ｌｆｉは、第一電極の表面の凹凸化および
非晶質半導体層と第二電極の界面の反射率に依存するこ
となく、第−電橋側から入射した光の散乱および反射に
よる利用率を高めた光電変換装置を提供することにある
。The invention! 1lfi increases the utilization rate by scattering and reflecting light incident from the first electric bridge side, without depending on the unevenness of the surface of the first electrode or the reflectance of the interface between the amorphous semiconductor layer and the second electrode. An object of the present invention is to provide a photoelectric conversion device.
上記の課題の解決のために、本発明は、透光性１＆板上
に透明導電材料よりなる第一電極を介して形成された半
導体層を光電変換層とし、半導体層の反第一電極側に設
けられた第二電極と第−電極から充電変換出力を取出す
光電変換装置において、第二電極が透明導電材料よりな
り、その第二電極の反半導体層側に透光性絶縁樹脂層を
介して光散乱性表面を有する白色板を備えたものとする
。In order to solve the above-mentioned problems, the present invention provides a semiconductor layer formed on a transparent substrate through a first electrode made of a transparent conductive material as a photoelectric conversion layer, and a side of the semiconductor layer opposite to the first electrode. In a photoelectric conversion device that extracts charge conversion output from a second electrode and a second electrode provided in A white plate with a light-scattering surface is provided.
第二電極が第一電極同様透明導電材料よりなるので、半
導体層で吸収しきれなかった光は第二電極を透過し、さ
らに透光性絶縁樹脂層を透過したのち、光散乱性表面に
おいて完全に散乱し、その大部分が反射する。散乱反射
光は逆の径路を通って大部分斜め方向から半導体層に入
射し、長い光学径路を通って半導体層に吸収され、光電
変換に寄与する。Since the second electrode is made of a transparent conductive material like the first electrode, the light that cannot be completely absorbed by the semiconductor layer is transmitted through the second electrode, and then through the light-transmitting insulating resin layer, where it is completely absorbed by the light-scattering surface. , and most of it is reflected. Most of the scattered reflected light passes through the opposite path and enters the semiconductor layer from an oblique direction, passes through a long optical path, is absorbed by the semiconductor layer, and contributes to photoelectric conversion.
（実施例〕
第１図は本発明の一実施例を示し、第２図と共通の部分
には同一の符号が付されている。ガラス基板１の上には
Ｓｎｏｗ、 Ｉ Ｔ Ｏ、ＺｎＯなどの透明導電膜に
よりなる第−電１階蒸着、熱ＣＶＤ、スパッタリングな
どの手法で表面平坦に形成し、その上にｐ形ａ−５＋Ｃ
：Ｈ膜３．ドープしないａ −５ＩＧＨ膜４およびｎ形
のａ−３ｔ：Ｈ膜５を順次プラズマＣｖＤ、光ＣＶＤあ
るいは熱ＣＶＤ等の作成方法により積層する。これら非
晶質半導体層の第二電極８としてＳｎＯ，、Ｉ Ｔ Ｏ
４ｎＯなどの透明導電膜を蒸着。(Embodiment) Fig. 1 shows an embodiment of the present invention, and the same parts as in Fig. 2 are given the same reference numerals.On the glass substrate 1 are materials such as Snow, ITO, ZnO, etc. A transparent conductive film is formed to have a flat surface by methods such as first-stage vapor deposition, thermal CVD, and sputtering, and a p-type a-5+C film is formed on the transparent conductive film.
:H film 3. An undoped a-5 IGH film 4 and an n-type a-3t:H film 5 are sequentially laminated by a forming method such as plasma CVD, optical CVD, or thermal CVD. As the second electrode 8 of these amorphous semiconductor layers, SnO, ITO
Deposit a transparent conductive film such as 4nO.
スパッタリング、印刷等の手法で形成する。この透明な
第二電極の背面にエチレンビニールアセテ−） ＩＶ
Ａ） 、あるいはポリビニルブチラール（ＰＶＢ）等の
透光性の封止用樹脂層９とふっ素糸白色樹脂、ポリプロ
ピレン、ポリエチレン、ポリ弗化ビニール、酸化マグネ
シウムなどからなる光散乱性表面をもつ白色板１０を圧
着加熱することにより太陽電池の単位電池ができ上がる
。Formed using methods such as sputtering and printing. Ethylene vinyl acetate (IV) is placed on the back of this transparent second electrode.
A) or a white plate 10 having a light-scattering surface made of a transparent sealing resin layer 9 such as polyvinyl butyral (PVB) and a fluorine thread white resin, polypropylene, polyethylene, polyvinyl fluoride, magnesium oxide, etc. By pressing and heating, a solar cell unit cell is completed.
このような太陽電池では、ガラス基板１より入射した光
７は第一電極２を直進して透過し、非晶質半導体層、特
に１ｉｉａ−５ｔ：Ｈ膜４で吸収され、吸収されずにこ
の非晶質半導体層を透過した光は封止用樹脂層９を透過
し、光散乱性白色板１０の表面で反射する。白色板ＩＯ
をふっ素糸樹脂より作成したときは白色板表面での光の
散乱率は９０％、炭素マグネシウム粉末、あるいはＰＴ
Ｆ［！粉末を固めて作成した板の場合には光の散乱率は
１００％となる。In such a solar cell, light 7 incident from the glass substrate 1 passes straight through the first electrode 2, is absorbed by the amorphous semiconductor layer, especially the 1iia-5t:H film 4, and is not absorbed. The light that has passed through the amorphous semiconductor layer passes through the sealing resin layer 9 and is reflected on the surface of the light-scattering white plate 10. white board IO
When made from fluorine thread resin, the light scattering rate on the white board surface is 90%, and when made from carbon magnesium powder or PT.
F [! In the case of a plate made by solidifying powder, the light scattering rate is 100%.
これは、第２図に示した従来の太陽電池の表面凹凸の第
一電極２および第二電橋６表面での散乱率の和より大き
い。This is larger than the sum of the scattering rates on the surfaces of the first electrode 2 and the second electric bridge 6 of the surface unevenness of the conventional solar cell shown in FIG.
第４図は第二電極としてＭ層を用いた太陽電池Ａ、Ａｇ
１ｌｉを用いた太陽電池Ｂと比較して本発明の実施例と
して第二電極の封止用樹脂９としてＥＶＡ、白色板１０
としてふっ素糸樹脂板を用いた太陽電池Ｃ１および白色
板としてＭｇＯ板を用いた太陽電池りの短絡電流密度を
示す、第４図より明らかなように、通常用いられるｕｇ
面電極を有する太陽電池はもとより、高反射金属である
Ａｇを裏面電極として用いた太陽電池の場合も、本発明
の実施例の太陽電池に短絡電流で及ばないことがわかる
。Figure 4 shows solar cell A, Ag using M layer as the second electrode.
In comparison with solar cell B using 1li, as an example of the present invention, EVA is used as the sealing resin 9 of the second electrode, and a white plate 10 is used.
As is clear from Figure 4, which shows the short-circuit current density of the solar cell C1 using a fluorocarbon resin plate as the white plate and the solar cell C1 using an MgO plate as the white plate, the commonly used ug
It can be seen that not only solar cells having a surface electrode but also solar cells using Ag, which is a highly reflective metal, as a back electrode are not as short-circuit current as the solar cells of the examples of the present invention.
第５図は太陽電池の単位素子を直列接続した光電変換装
置を示す、この場合は、バターニングされた非晶質シリ
コン層の間隙より入射する光も裏面の白色板１０で散乱
反射するため、発電に有効に利用することが可能となる
効果がある。同時に第３図に示した従来装置の絶縁性樹
脂層１１と耐水性フィルム１２と同様、封止用樹脂層９
と白色板１０が第二電極８および非晶質シリコン半導体
層の腐食等に対する保護の効果も同時に有する。FIG. 5 shows a photoelectric conversion device in which unit elements of solar cells are connected in series. In this case, since the light incident from the gap between the patterned amorphous silicon layers is also scattered and reflected by the white plate 10 on the back side, This has the effect of making it possible to use it effectively for power generation. At the same time, similar to the insulating resin layer 11 and water-resistant film 12 of the conventional device shown in FIG.
At the same time, the white plate 10 also has the effect of protecting the second electrode 8 and the amorphous silicon semiconductor layer from corrosion.
以上の実施例では、光電変換層として非晶質シリコンお
よび非晶質シリコンカーバイトを用いたが、非晶質シリ
コンゲルマニウムあるいは多結晶シリコン層を用いるこ
ともできる。また光散乱性白色板として樹脂中にＭ板を
埋め込んだものを用いると耐水性が向上し、特性の安定
化に有利である。In the above embodiments, amorphous silicon and amorphous silicon carbide were used as the photoelectric conversion layer, but an amorphous silicon germanium or polycrystalline silicon layer may also be used. Further, if a light-scattering white plate in which an M plate is embedded in a resin is used, the water resistance is improved and it is advantageous for stabilizing the characteristics.
本発明によれば、光電変換装置の半導体層の反光入射側
に設けられる第二電極も透光性とし、半導体層および第
二電極を透過した光も反射させるために透光性絶縁樹脂
層を介して光散乱性表面を有する白色板を設けたもので
、光の散乱率が１００％に近いため光を金属第二電極で
反射させる場合、あるいは透明第一電極の表面に凹凸を
設けた場合に比して特性の向上が著しい。According to the present invention, the second electrode provided on the anti-light incident side of the semiconductor layer of the photoelectric conversion device is also transparent, and the transparent insulating resin layer is provided to reflect the light transmitted through the semiconductor layer and the second electrode. A white plate with a light-scattering surface is provided through the electrode, and the light scattering rate is close to 100%, so the light is reflected by the metal second electrode, or the surface of the transparent first electrode is provided with irregularities. The characteristics are significantly improved compared to the previous one.
第１図に本発明の一実施例の太陽電池単位素子の断面図
、第２図は従来の太陽電池単位素子の断面図、第３図は
従来の直列接続太陽電池からなる光電変換装置の断面図
、第４図は本発明の実施例の太陽電池と比較例の太陽電
池の短絡電流密度を示すグラフ、第５図は本発明の一実
施例の太陽電池を直列接続した光電変換装置の断面図で
ある。
ｌニガラス基板、２：透明第一電極、３：ｐ形ａ−３Ｉ
Ｃ：Ｈ膜、４ ： ｌ １ｔａ−５ｉ：Ｈ膜、５＝ｎ形
ａ−５ｌ：Ｈ膜、７：光、８：透明第二電極、９：封止
ノ
第３図
第１図
〃
第２図
第４図FIG. 1 is a cross-sectional view of a solar cell unit element according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of a conventional solar cell unit element, and FIG. 3 is a cross-sectional view of a conventional photovoltaic conversion device consisting of series-connected solar cells. Figure 4 is a graph showing the short-circuit current density of a solar cell according to an example of the present invention and a solar cell according to a comparative example, and Figure 5 is a cross section of a photoelectric conversion device in which solar cells according to an example of the present invention are connected in series. It is a diagram. l glass substrate, 2: transparent first electrode, 3: p-type a-3I
C: H film, 4: l 1ta-5i: H film, 5 = n-type a-5l: H film, 7: light, 8: transparent second electrode, 9: sealing Fig. 3 Fig. 1 Figure 2 Figure 4
Claims (1)
して形成された半導体層を光電変換層とし、半導体層の
反第一電極側に設けられた第二電極と第一電極から光電
変換出力を取出すものにおいて、第二電極が透明導電材
料よりなり、その第二電極の反半導体層側に透光性絶縁
樹脂層を介して光散乱性表面を有する白色板を備えたこ
とを特徴とする光電変換装置。1) A semiconductor layer formed on a transparent substrate via a first electrode made of a transparent conductive material is used as a photoelectric conversion layer, and a second electrode and a first electrode provided on the opposite side of the semiconductor layer to the first electrode are used as a photoelectric conversion layer. In a device that extracts photoelectric conversion output, the second electrode is made of a transparent conductive material, and a white plate having a light scattering surface is provided on the side opposite to the semiconductor layer of the second electrode via a transparent insulating resin layer. Features of photoelectric conversion device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63258991A JPH02106077A (en) | 1988-10-14 | 1988-10-14 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63258991A JPH02106077A (en) | 1988-10-14 | 1988-10-14 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02106077A true JPH02106077A (en) | 1990-04-18 |
Family
ID=17327836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63258991A Pending JPH02106077A (en) | 1988-10-14 | 1988-10-14 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02106077A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009035112A1 (en) * | 2007-09-12 | 2009-03-19 | Mitsubishi Materials Corporation | Composite membrane for super straight solar cell, process for producing the composite membrane for super straight solar cell, composite membrane for substraight solar cell, and process for producing the composite membrane for substraight solar cell |
| JP2009289946A (en) * | 2008-05-29 | 2009-12-10 | Kyocera Corp | Thin-film solar cell module |
| JP2011507223A (en) * | 2007-12-07 | 2011-03-03 | クラレイ ユーロップ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Photovoltaic module with reflective adhesive film |
| WO2012073806A1 (en) * | 2010-11-30 | 2012-06-07 | ダイキン工業株式会社 | Solar cell system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5870581A (en) * | 1981-10-21 | 1983-04-27 | Sharp Corp | Solar battery device |
| JPS59144178A (en) * | 1983-02-07 | 1984-08-18 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
-
1988
- 1988-10-14 JP JP63258991A patent/JPH02106077A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5870581A (en) * | 1981-10-21 | 1983-04-27 | Sharp Corp | Solar battery device |
| JPS59144178A (en) * | 1983-02-07 | 1984-08-18 | Semiconductor Energy Lab Co Ltd | Photoelectric converter |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009035112A1 (en) * | 2007-09-12 | 2009-03-19 | Mitsubishi Materials Corporation | Composite membrane for super straight solar cell, process for producing the composite membrane for super straight solar cell, composite membrane for substraight solar cell, and process for producing the composite membrane for substraight solar cell |
| US8921688B2 (en) | 2007-09-12 | 2014-12-30 | Mitsubishi Materials Corporation | Composite film for superstrate solar cell having conductive film and electroconductive reflective film formed by applying composition containing metal nanoparticles and comprising air pores of preset diameter in contact surface |
| JP2011507223A (en) * | 2007-12-07 | 2011-03-03 | クラレイ ユーロップ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Photovoltaic module with reflective adhesive film |
| JP2009289946A (en) * | 2008-05-29 | 2009-12-10 | Kyocera Corp | Thin-film solar cell module |
| WO2012073806A1 (en) * | 2010-11-30 | 2012-06-07 | ダイキン工業株式会社 | Solar cell system |
| JP2012134464A (en) * | 2010-11-30 | 2012-07-12 | Daikin Ind Ltd | Solar cell system |
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