JPH02105445A - Resin-sealed type semiconductor device - Google Patents
Resin-sealed type semiconductor deviceInfo
- Publication number
- JPH02105445A JPH02105445A JP63258719A JP25871988A JPH02105445A JP H02105445 A JPH02105445 A JP H02105445A JP 63258719 A JP63258719 A JP 63258719A JP 25871988 A JP25871988 A JP 25871988A JP H02105445 A JPH02105445 A JP H02105445A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- resin
- insulating film
- semiconductor element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 12
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 7
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は樹脂封止型半導体装置に関し、特にボンディン
グ・ワイヤ長が長寸法である半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed semiconductor device, and particularly to a semiconductor device in which the bonding wire length is long.
第３図は従来の樹脂封止型半導体装置の断面図で、゛リ
ード・フレームのアイランド２ａ上の半導体素子１は、
電極とインナー・リード２ｂ間をワイヤ・ボンダーでボ
ンディング・ワイヤ３でボンディング接続された後、モ
ールド成形用金型内において熱硬化性樹脂５で封止され
たものである。FIG. 3 is a cross-sectional view of a conventional resin-sealed semiconductor device, in which the semiconductor element 1 on the island 2a of the lead frame is
After the electrode and the inner lead 2b are bonded and connected with a bonding wire 3 using a wire bonder, the electrode and the inner lead 2b are sealed with a thermosetting resin 5 in a molding die.
〔幣恵霜熟、ス〜ン九ゴ１ｂ島）
上述した従来の樹脂封止型半導体装置は、樹脂封入時の
樹脂５の流れによりワイヤに加わる外力をワイヤ３の剛
性のみで受は止めているため、ワイヤ長が長寸法になる
とワイヤ３が変形する（以下ワイヤ流れという）傾向が
顕著になり、ワイヤ３どうしが接触するとかワイヤ３と
その隣接するインナー・リード２ｂとが接触するとか、
接着していたワイヤ３とインナー・リード２ｂが切れて
しまうという不良を発生する欠点がある。一般にこのワ
イヤ流れ、は、Ｘ線撮影により観察すると、ワイヤ３の
張られた方向が、樹脂５の流れる方向に対して垂直に近
いものほど顕著である。 本発明の目的は、上記の情況
に鑑み、ワイヤ流れ効果を緩和し得る構造の樹脂封止型
半導体装置を提供することである。[Shimoju Shime, Sunkyugo 1b Island] The conventional resin-encapsulated semiconductor device described above uses only the rigidity of the wire 3 to absorb the external force applied to the wire due to the flow of the resin 5 during resin encapsulation. Therefore, as the wire length increases, there is a noticeable tendency for the wire 3 to deform (hereinafter referred to as wire flow), and the wires 3 may come into contact with each other or the wire 3 and its adjacent inner lead 2b may come into contact with each other.
There is a drawback that the bonded wire 3 and inner lead 2b are broken, which causes a defect. Generally, when observed by X-ray photography, this wire flow is more pronounced as the direction in which the wire 3 is stretched is closer to perpendicular to the direction in which the resin 5 flows. In view of the above circumstances, an object of the present invention is to provide a resin-sealed semiconductor device having a structure that can alleviate the wire flow effect.
本発明によれば、樹脂封止型半導体装置は、半導体素子
と、前記半導体素子の電極とインナー・リードとを接続
するボンデインク・ワイヤと、前記ボンディング・ワイ
ヤの表面を被覆する絶縁フィルムと、前記絶縁フィルム
を介し前記半導体素子をボンディング・ワイヤおよびイ
ンナー・リードと共に樹脂封止する熱硬化性樹脂とを含
んで構成される。According to the present invention, a resin-sealed semiconductor device includes: a semiconductor element; a bonding wire connecting an electrode of the semiconductor element to an inner lead; an insulating film covering a surface of the bonding wire; and a thermosetting resin for resin-sealing the semiconductor element together with bonding wires and inner leads via an insulating film.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例を示す樹脂封止型半導体装置
の断面図である。本実施例によれは、樹脂封止型半導体
装置は、リードフレームのアイランド２ａ上に搭載され
た半導体素子１と、その電極パッドとリードフレームの
インナーリード２ｂとを結ぶボンディング・ワイヤ３と
、このワイヤ３を覆うように形成された絶縁フィルム４
と、これらを封止する熱硬化性樹脂５とを含む。この絶
縁フィルム４によるワイヤ３表面の被覆は、ワイヤ・ボ
ンディング後のワイヤ３上を絶縁フィルム４で覆い、こ
れを赤外線ヒーターによって２００℃以上に加熱しワイ
ヤ３と接着させることにより完了する。これに用いる絶
縁フィルム４は熱可塑性で厚み５０μｍ程度の樹脂材か
、または、熱可塑性接着剤をコーティングした厚み３５
μｍ程度のものであればよい。FIG. 1 is a sectional view of a resin-sealed semiconductor device showing an embodiment of the present invention. According to this embodiment, the resin-sealed semiconductor device includes a semiconductor element 1 mounted on an island 2a of a lead frame, bonding wires 3 connecting the electrode pads of the semiconductor element 1 to inner leads 2b of the lead frame, and Insulating film 4 formed to cover wire 3
and a thermosetting resin 5 for sealing these. Covering the surface of the wire 3 with the insulating film 4 is completed by covering the wire 3 after wire bonding with the insulating film 4, and heating this to 200° C. or higher with an infrared heater to bond it to the wire 3. The insulating film 4 used for this is either a thermoplastic resin material with a thickness of about 50 μm or a thermoplastic adhesive coated with a thickness of 35 μm.
It may be of the order of μm.
第２図は本発明の他の実施例を示す（Ｍ脂封止型半導体
装置の断面図である。本実施例によれば、絶縁フィルム
４はワイヤ３とインナー・リード２は覆うが、半導体素
子１上からは除かれる。このように穴あき絶縁フィルム
６を使用すると、絶縁フィルムとワイヤとを接着させる
ために要する時間を短縮できるという利点がある。FIG. 2 shows another embodiment of the present invention (this is a cross-sectional view of an M-type resin-sealed semiconductor device. According to this embodiment, the insulating film 4 covers the wires 3 and the inner leads 2, but the semiconductor It is removed from above the element 1. Using the perforated insulating film 6 in this way has the advantage that the time required to bond the insulating film and the wire can be shortened.
以上説明したように、本発明によれば、樹脂封止型半導
体装置は、ボンディング・ワイヤ上にこれと接着する絶
縁フィルムを有しているので、樹脂封入時の樹脂流れが
ワイヤに及ぼす外力をワイヤ上の絶縁フィルムが受ける
ことになるので、ワイヤ長が長寸法であっても、ワイヤ
流れは発生しない。従って従来はワイヤ流れのため不良
となったものまたは製造不可能であったものが良品とし
て製造できる効果を生じる。さらに、従来はワイヤ長が
長寸法にならないようにリードフレームを設計する必要
があったが、本発明によればワイヤ長が長寸法であって
も良いので、リードフレームの設計工数を削減できるほ
か、一つの半導体素子を基本として縮小した素子を組立
てる時、縮小前と同一のリードフレームを使用できると
いう効果も併せもたすこともできる。As explained above, according to the present invention, the resin-sealed semiconductor device has an insulating film on the bonding wire that adheres to the bonding wire, so that the external force exerted on the wire by the resin flow during resin encapsulation is reduced. Since the insulating film on the wire will be affected, wire drift will not occur even if the wire length is long. Therefore, it is possible to manufacture a product as a non-defective product, which was conventionally defective or unmanufacturable due to wire flow. Furthermore, in the past, it was necessary to design a lead frame so that the wire length was not a long dimension, but according to the present invention, the wire length can be a long dimension, which reduces lead frame design man-hours. In addition, when assembling a reduced-sized semiconductor element based on one semiconductor element, it is also possible to use the same lead frame as before the reduction.
リード、３・・・ボンディング・ワイヤ、４・・・絶縁
フィルム、５・・・熱硬化性樹脂、６・・・穴あき絶縁
フィルム。Lead, 3... Bonding wire, 4... Insulating film, 5... Thermosetting resin, 6... Perforated insulating film.
Claims (1)
ドとを接続するボンディング・ワイヤと、前記ボンディ
ング・ワイヤの表面を被覆する絶縁フィルムと、前記絶
縁フィルムを介し前記半導体素子をボンディング・ワイ
ヤおよびインナー・リードと共に樹脂封止する熱硬化性
樹脂とを含むことを特徴とする樹脂封止型半導体装置。A bonding wire that connects a semiconductor element, an electrode and an inner lead of the semiconductor element, an insulating film that covers the surface of the bonding wire, and a bonding wire that connects the semiconductor element to the inner lead through the insulating film. A resin-sealed semiconductor device comprising a thermosetting resin that is resin-sealed together with a lead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63258719A JPH02105445A (en) | 1988-10-13 | 1988-10-13 | Resin-sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63258719A JPH02105445A (en) | 1988-10-13 | 1988-10-13 | Resin-sealed type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02105445A true JPH02105445A (en) | 1990-04-18 |
Family
ID=17324140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63258719A Pending JPH02105445A (en) | 1988-10-13 | 1988-10-13 | Resin-sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02105445A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128673A (en) * | 1978-03-29 | 1979-10-05 | Kyushu Nippon Electric | Semiconductor |
| JPS61112358A (en) * | 1984-11-07 | 1986-05-30 | Toshiba Corp | Semiconductor device |
-
1988
- 1988-10-13 JP JP63258719A patent/JPH02105445A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128673A (en) * | 1978-03-29 | 1979-10-05 | Kyushu Nippon Electric | Semiconductor |
| JPS61112358A (en) * | 1984-11-07 | 1986-05-30 | Toshiba Corp | Semiconductor device |
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