JPH02103951A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH02103951A
JPH02103951A JP25770588A JP25770588A JPH02103951A JP H02103951 A JPH02103951 A JP H02103951A JP 25770588 A JP25770588 A JP 25770588A JP 25770588 A JP25770588 A JP 25770588A JP H02103951 A JPH02103951 A JP H02103951A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
region
regions
si
2a
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25770588A
Inventor
Yasuaki Inoue
Takashi Ipposhi
Tadashi Nishimura
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To suppress the occurrence of a bird's beak and to expand element forming regions by providing a compound forming rate larger than that in other parts by oxidizing isolating regions of Si single crystal layers after the formation of a polycrystal part or an amorphous part.
CONSTITUTION: A single crystal Si 2 and SiO33 are provided on an insulating substrate 1. A window is provided at a region 4a corresponding to an element isolating region. Double-layer masks of Si3N44 having said region 4a and resist 5 are provided on the insulating substrate 1. Si ion beams B are implanted, and a specified region 2a is made amorphous. The entire resist 5 is removed, and annealing is performed at about 600°C. Then the region 2a is made to be the polycrystalline region. Then, the entire resist is removed, and heat treatment is performed in O2. At this time, the compound forming rate of the polycrystalline or amorphous region 2a is larger than that of other single crystal regions. Therefore oxidization is made to progress quickly along the thickness. The occurrence of a bird's beak is effectively suppressed. Element isolating regions having the required thickness are formed. The element forming regions 2a and 2b are separated each other.
COPYRIGHT: (C)1990,JPO&Japio
JP25770588A 1988-10-13 1988-10-13 Manufacture of semiconductor device Pending JPH02103951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25770588A JPH02103951A (en) 1988-10-13 1988-10-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25770588A JPH02103951A (en) 1988-10-13 1988-10-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH02103951A true true JPH02103951A (en) 1990-04-17

Family

ID=17309967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25770588A Pending JPH02103951A (en) 1988-10-13 1988-10-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH02103951A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7192840B2 (en) 2002-10-30 2007-03-20 Oki Electric Industry Co., Ltd. Semiconductor device fabrication method using oxygen ion implantation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7192840B2 (en) 2002-10-30 2007-03-20 Oki Electric Industry Co., Ltd. Semiconductor device fabrication method using oxygen ion implantation

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