JPH0199227A - Hybrid integrated circuit structure - Google Patents

Abstract

PURPOSE:To raise heat sink property and to improve high frequency characteristic by placing a semiconductor chip of a heat generator on a heat sink substrate having heat sink property, and forming wiring conductors of film of a material having low permittivity. CONSTITUTION:A film 20 of a material having low permittivity has wiring conductors 26. Chip components 11-1, 11-2 are placed on the film 20. The film 20 is engaged on a heat sink substrate 12 on which a semiconductor chip 10 is placed, and the chip 20 is engaged within a recess 23. A ceiling plate 24 is adhered fixedly by an elastic connector 14 in a relatively upward resiliently deformed state. Thus, the heat sink property is raised, and high frequency characteristic is improved.

Description

[Detailed Description of the Invention] [Summary] The purpose of the present invention is to provide a substrate with excellent heat dissipation properties and a substrate with excellent heat dissipation properties, and to make it possible to improve heat dissipation properties and high frequency characteristics and improve electrical connections regarding hybrid integrated circuit structures. A mounted semiconductor chip, a chip-shaped elastic connector mounted on the top surface of the semiconductor chip and having conductivity in the thickness direction and insulation in the surface direction, and a semiconductor chip having the depth dimension described above on the bottom surface. It has a recess with a top plate portion that is slightly smaller than the combined thickness of the chip and the elastic connector and has a shape corresponding to the semiconductor chip, and has an electrode conductor projecting from the bottom surface of the top plate portion, and further It consists of a film body made of a material with a low dielectric constant and having a wiring conductor, and a chip component mounted on the film body, and the film body is placed in the recess on the heat dissipation board on which the semiconductor chip is mounted. The semiconductor chip is fitted, and the top plate is adhesively fixed in a state in which it is relatively elastically deformed upward by the elastic connector, and the electrode conductor is connected to the top plate by the elastic force of the top plate itself. The elastic connector is pressed so that the electrode pads on the semiconductor chip and the electrode conductors are electrically connected via the elastic connector.

[Industrial application field] The present invention relates to hybrid integrated circuit structures.

Hybrid integrated circuit structures are moving toward large-scale integration, and this requires improvements in heat dissipation and high frequency characteristics, as well as improvements in connection work.

[Conventional technology]

A conventional hybrid integrated circuit structure is shown in FIG. In the figure, 1 is a semiconductor chip and 2 1.2 2 are chip components, both of which are mounted on a common ceramic substrate 3.

Each electrode pad 4 on the upper surface of the semiconductor chip 1 and the electrode pad 5 on the ceramic substrate 3 around the semiconductor chip 1 are connected by wires 6.

Reference numeral 7 denotes a wiring conductor, which is formed on the ceramic substrate 3.

[Problems to be Solved by the Invention] In the above-mentioned hybrid integrated circuit structure, its heat dissipation and high frequency characteristics are determined by the ceramic substrate 3, and it is necessary to respond to the improvement of both of the above characteristics with large-scale integration. The problem was that it couldn't be done.

Furthermore, with large-scale integration, there is a problem in that the number of man-hours required for wire bonding connection increases.

SUMMARY OF THE INVENTION An object of the present invention is to provide a hybrid integrated circuit structure capable of improving heat dissipation and high frequency characteristics, and improving electrical connections.

[Means for solving problems]

The hybrid integrated circuit structure of the present invention includes a substrate with excellent heat dissipation,
A semiconductor chip mounted on the heat dissipation board, a chip-shaped elastic connector mounted on the top surface of the semiconductor chip and having conductivity in the thickness direction and insulation in the surface direction, and a The dimensions are slightly smaller than the combined thickness of the semiconductor chip and the elastic connector, and the shape has a recess with a top plate corresponding to the semiconductor chip,
and a film body made of a material with a low dielectric constant, which has an electrode conductor protruding from the lower surface of the top plate part and further has a wiring conductor, and a chip component mounted on the film body,
A state in which the film body is placed on a heat dissipation board on which the semiconductor chip is mounted, the semiconductor chip is fitted into the recess, and the top plate portion is relatively elastically deformed upward by the elastic connector. The electrode conductor is pressed against the elastic connector by the elastic force of the top plate itself, and the electrode pad on the semiconductor chip and the electrode conductor are electrically connected via the elastic connector. The structure consists of:

[Effect]

The heat dissipation substrate improves heat dissipation, and the film body made of a material with a low dielectric constant improves high frequency characteristics.

By using an elastic connector and determining the depth of the recess in the film body as described above, electrical connection between the electrode pads of the semiconductor chip and the electrode conductor becomes easy.

These make it possible to solve various problems associated with increasing the scale of hybrid integrated circuits.

〔Example〕

FIG. 1 is a sectional view showing a part of a hybrid integrated circuit structure according to an embodiment of the present invention, and FIG. 2 is an exploded view of the structure.

In each figure, 10 is a semiconductor depth, and 11-1 and 11-2 are chip components.

Reference numeral 12 denotes a substrate with excellent heat dissipation, specifically a fully bent plate.

There is an adhesive layer 13 on the upper surface of the heat dissipation board 12 , and the semiconductor chip 10 is adhered to this adhesive layer 13 and attached to the heat dissipation board 12 .
It is equipped with.

14 is an elastic connector, and as shown in FIGS. 3 and 4, a large number of metal wire pieces 16 are provided through a silicone rubber plate 15 in its thickness direction and exposed on the top and bottom surfaces. The structure is conductive in the thickness direction and insulating in the surface direction.

The elastic connector 14 has the same planar shape as the semiconductor chip 10, and the metal wire piece 16 has the same planar shape as the semiconductor chip 10.
They are arranged in the same arrangement as the electrode pads 17 on the top surface of No.

This elastic connector 14 is mounted on the upper surface of the semiconductor dip 10 with the lower end of each metal wire piece 16 in contact with the corresponding electrode pad 17.

Note that the pitch p of the metal wire pieces 16 can be reduced to about 0.1M, and even if the pitch of the electrode pads 17 is small, it can be applied.

Reference numeral 20 denotes a polyimide film body, which has a two-layer structure consisting of a polyimide base film 21 and a polyimide cover film 22 above it.

A recess 23 with a top plate portion is formed in the film body 20.

The top plate portion 24 is formed from the cover film 22.

This top plate portion 24 is thin and flexible.

The film body 20 has the same shape as the heat dissipation board 12, and the recess 23 is formed to correspond to the mounting portion of the semiconductor chip 10 on the heat dissipation board 12.

Each recess 23 has a shape corresponding to the shape of the semiconductor chip 10. The depth dimension d is determined to be slightly smaller than the dimension t which is the sum of the thickness dimension tt of the semiconductor chip 10 and the thickness dimension t2 of the elastic connector 14.

Reference numeral 25 denotes a plurality of electrode conductors, which are provided on the lower surface of the top plate portion 24 so as to protrude from the periphery of the recessed portion 23 into the interior of the four portions 23, as shown in FIG. FIG. 5 shows the arrangement of the electrode conductors 25 with the top plate portion 24 removed. Further, in FIG. 5, the elastic connector 14 is also omitted, and each electrode conductor 25
is formed so that the tip portion 25a faces the electrode pad 17. Regarding the elastic connector 14, the tip of each electrode conductor 25 faces the upper end of the metal wire piece 16 whose lower end is in contact with the electrode pad 17.

26 is a wiring conductor, which is formed on the top surface or inside the film body 20.

On the film body 20 having the above structure, the chip component 11-+
, 11-2 is soldered and installed.

With the semiconductor chip 10 fitted into the recess 23, the film body 20 covers the lower surface of the base film 21 with the adhesive layer 1.
3 and fixed with adhesive.

The tip portion 25a of each electrode conductor 25 is in contact with the upper end of the metal wire piece 16 of the elastic connector 14.

In this case, since d<t, the top plate portion 24 is relatively pushed upward by the elastic connector 15 and is elastically deformed as if slightly inflated. The downward force F1 is in a stored state.

Each electrode conductor 25 is pressed downward by the force F1 stored in the inner body of the top plate portion 24, and the tip portion 25a is pressed against and in contact with the upper end of the corresponding metal wire piece 16.
It is electrically connected reliably to the piece 1a 16.

As a result, the electrode pad 1 on the top surface of the semiconductor chip 10
7 and an electrode conductor 25 are connected via an elastic connector 14.

The above hybrid integrated circuit structure has the following effects.

■ Good heat dissipation.

The main heating element in the hybrid integrated circuit structure is the semiconductor chip 10.
It is. This semiconductor chip 10 is mounted on a heat dissipation board 2 which is a bent metal plate, and the heat conductivity of this heat dissipation board 2 is higher than that of a ceramic substrate. Therefore, the heat of the semiconductor chip 10 is efficiently dissipated through the heat dissipation substrate 2, and the heat dissipation performance is improved, and even when integrated on a large scale, the semiconductor chip 10 has sufficient heat dissipation performance.

■ Good high frequency characteristics.

The wiring conductor 26 is formed on the polyimide film body 20. The dielectric constant of polyimide is about 4, which is lower than the dielectric constant of ceramic (about 9). Therefore, the above-described hybrid integrated circuit structure has higher frequency characteristics than the conventional one.

Therefore, even when integrated on a large scale, hybrid integrated circuits have excellent high frequency characteristics and are suitable for high-speed signals.

■ Connection is improved.

The electrode pad 17 of the semiconductor chip 10 and the electrode conductor 25 are electrically connected via the elastic connector 14.
The electrical connection between the two is a suppressive contact.

A plurality of electrical connections for each semiconductor chip 10 are made at once, regardless of the number of connection points, by folding the film body 20 and adhering it to the heat dissipation substrate 12, as will be described later. Therefore, the above-mentioned electrical connection is much more labor intensive than the conventional wire-V bonding method.

Furthermore, since the elastic connector 14 is used, high-density wiring with narrow intervals between connection points is possible.

Further, since the electrical connection is made by pressure contact using the elastic connector 14, it is easier to replace the semiconductor chip 10 when the semiconductor chip 10 breaks down compared to other connection means.

Further, the pressing force 27 is obtained by the elastic force F1 stored in the top plate part 24 itself, and no special presser metal fittings are used, and the electrical connection structure is simple in this respect as well.

■ Good manufacturing workability.

As described later, the semiconductor chip 10 and the chip component 11-
1 and 112 on separate members, and finally, the two members are assembled. Therefore, the work of mounting the semiconductor chip 10 and the work of mounting the chip components 11-1 and 112 can be performed concurrently, which improves manufacturing efficiency and reduces manufacturing costs.

Next, reference will be made to FIG. 6 for a method of manufacturing the above hybrid integrated circuit structure.

As for the semiconductor chip 10, as shown in FIG.
Glue and install. Next, as shown in the same figure (8),
An elastic connector 14 is mounted on the semiconductor chip 10.

On the other hand, regarding chip parts 11-+ and 11-2,
It is mounted on the polyimide film body 20 shown in (C) of the same figure by soldering or the like, as shown in (D) of the same figure.

As shown in FIG. 1E, the polyimide film body 20 is placed on the heat dissipation substrate 12 with its recess 23 fitted with the semiconductor chip 10. Since d<t, the top plate portion 24
contacts the elastic connector 14, and the film body 20
A gap Q is formed between and the heat dissipation board 12.

In this state, a pressure F2 indicated by an arrow 28 is applied to adhesively fix the film body 20 to the heat dissipation substrate 12. At this time, the top plate part 24 is pushed up relatively and deformed elastically, and at this time, the above-mentioned elastic force F1 is stored in the top plate part 24, and this elastic force F1 causes the electrode conductor 25 to move to the elastic connector 1.
Pushed to 4. Therefore, no presser fitting is required.

In addition, for electrical connection, place the film body 20 and glue J"
This is done in batches during the filtering process.

In addition, the mounting of the semiconductor chip 10, the chip component 11-+
, 11-2 and the combination of the semiconductor chip 10 and the chip components 111, 11-2 can be carried out simultaneously, and the manufacturing workability is also improved compared to the conventional one.

Finally, a method for manufacturing the polyimide film body 20 will be explained with reference to FIG. 7.

First, as shown in FIG. 3A, an adhesive H30 is formed on the upper surface of the base film 21 having a thickness of tl.

Next, as shown in FIG. 2B, an opening 31 having a shape corresponding to the shape of the semiconductor chip 10 is formed in a predetermined portion of the base film 21 using a punch.

Next, as shown in the same figure (C), the base film 21
Copper foil 32 is pasted on the top surface of.

Next, as shown in FIG. 3D, a resist is applied to the upper surface of the copper foil 32 to form a resist layer 33.

Next, as shown in FIG. 3E, the upper resist layer is patterned, and the lower surface is masked with tape 34.

Next, as shown in Figure (F), the copper foil 32 is etched, and as shown in Figure (G), the resist and tape 34 are etched.
is removed, and the base film 21 with the electrode conductor 25 and the wiring conductor 26 is separated.

On the other hand, as shown in Figure (H), an adhesive layer 35 is formed on the lower surface of the cover film 22 with a thickness of t2, and holes are punched at predetermined locations as shown in Figure (1). Open 36.

This cover film 22 and the above-mentioned base film 21 are pasted together as shown in FIG.

〔Effect of the invention〕

As explained above, according to the present invention, the semiconductor chip, which is a heating element, has heat dissipation properties! 4 mounted on the lt board
Since it is made of 14-piece construction, it is possible to improve heat dissipation.

Since the wiring conductor is formed of a film body made of a material with a low dielectric constant, it is possible to improve high frequency characteristics. As a result, heat dissipation becomes more apparent due to large-scale integration! It is possible to solve both the problems of 1 and high frequency characteristics, and large-scale integration can be realized.

Furthermore, since the electrical connection with the electrode pads of the semiconductor chip is made via the elastic connector, higher density wiring is possible than with wire bonding, and connection workability is improved. Furthermore, replacement work when a semiconductor chip breaks down becomes easier.

Further, since the pressing contact force is obtained from the force stored in the top plate itself due to the elastic deformation of the top plate, there is no need for metal fittings to apply the pressing force, and the connection structure can be simplified.

Furthermore, since the semiconductor chip is mounted on the heat dissipation board and the chip components are mounted on the film body, which are separate members, it is possible to improve productivity by performing the above-mentioned mounting operations in parallel.

[Brief explanation of the drawing]

Fig. 1 is a cross-sectional view of a part of an embodiment of the present invention, Fig. 2 is an exploded view of the embodiment shown in Fig. 1, and Fig. 3 is an elastic material shown in Figs. FIG. 4 is a perspective view of the connector; FIG. 4 is an enlarged sectional view of a portion thereof; FIG. 5 is a diagram showing the arrangement of electrode conductors in correspondence with the semiconductor chip; FIG. 6 is a manufacturing process for the hybrid integrated circuit structure shown in FIG. 1. FIG. 7 is a diagram showing the manufacturing process of the film body in FIGS. 1, 2, and 6, and FIG. 8 is a diagram showing a conventional example. In the figure, 1'0 is a semiconductor chip, 11-1.112 is a deep part, 12 is a heat dissipation board, 13 is an adhesive layer, 14 is an elastic connector, 15 is a silicone rubber plate, 16 is a metal wire piece, and 17 is a Electrode pad, 20 is a polyimide film body, 21 is a base film, 22 is a cover film, 23 is a top plate A/J recess, 24 is a top plate, 25 is an electrode conductor, 25a is a tip, 2G is for wiring A conductor, 27 indicates an arrow indicating force, and 28 indicates an arrow indicating pressure. Work θ S + Pussy 2 Ko + 2 ph'iP Sakakimi diagram Figure 4 Male figure 5 Book Refreshment of the guard's body Figure 1 Figure 2 Figure 8

Claims (1)

[Claims] A substrate (12) with excellent heat dissipation properties, and a semiconductor chip (10) mounted on the heat dissipation substrate (12).
A chip-shaped elastic connector (14) mounted on the top surface of the semiconductor chip (10) and having conductivity in the thickness direction and insulation in the surface direction, and a depth dimension (d) on the bottom surface thereof. ) is slightly smaller than the combined thickness dimension (t) of the semiconductor chip and the elastic connector, and has a recess (23) with a top plate portion whose shape corresponds to the semiconductor chip, and the top plate portion (24) ) protrudes from the bottom surface of the electrode conductor (2
5) and further includes a wiring conductor (26) and a film body (20) made of a material with a low dielectric constant;
Chip parts (11-_1, 11-_2) mounted on 0)
), and the film body (20) is the semiconductor chip (10).
The recess (23) is placed on the heat dissipation board (12) on which the
The semiconductor chip (10) is fitted therein, and the top plate (24) is adhesively fixed in a state in which it is relatively elastically deformed upward by the elastic connector (14), and the electrode conductor (25) is pressed against the elastic connector (14) by the elastic force (F_1, 27) of the top plate itself, and the electrode pad (17) on the semiconductor chip (10) and the electrode conductor (25) are pressed together. A hybrid integrated circuit structure characterized in that it is electrically connected via the elastic connector (14).