JPH0198166U - - Google Patents
Info
- Publication number
- JPH0198166U JPH0198166U JP1987193395U JP19339587U JPH0198166U JP H0198166 U JPH0198166 U JP H0198166U JP 1987193395 U JP1987193395 U JP 1987193395U JP 19339587 U JP19339587 U JP 19339587U JP H0198166 U JPH0198166 U JP H0198166U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- processing apparatus
- plasma processing
- insulating surface
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000977 initiatory effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000007666 vacuum forming Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は本考案装置の実施例を示す概要図、ま
た第２図は非接地電極の具体例の斜視図である。
１……被処理物、２……非接地電極、３……絶
縁表面、４……巻取りロール、５……接地電極、
６……真空容器、７……ガイドロール。
FIG. 1 is a schematic diagram showing an embodiment of the device of the present invention, and FIG. 2 is a perspective view of a specific example of a non-grounded electrode. 1... Workpiece, 2... Non-grounded electrode, 3... Insulated surface, 4... Winding roll, 5... Grounded electrode,
6...Vacuum container, 7...Guide roll.
Claims (1)
極２と接地電極５とよりなる電極対の少なくとも
１対と、該電極対の一方の電極の表面に長尺被処
理物１を接触通過させるためのガイドロール７群
を含む被処理物誘導機構とを装設してなり、上記
真空容器内の真空形成手段、プラズマ発生ガス導
入手段および非接地電極へのプラズマ発生用電圧
印加手段を有するプラズマ処理装置において、被
処理物が接触する電極面に少なくとも該接触開始
部分３を含んで絶縁表面を形成したことを特徴と
するプラズマ処理装置。 ２ 絶縁表面が、被処理物導入側の電極端縁から
前記接触開始部分までの間を含んで形成される実
用新案登録請求の範囲第１項記載のプラズマ処理
装置。 ３ 絶縁表面が、更に被処理物送出側の電極端縁
から被処理物の離脱開始部分までの間を含んで形
成される実用新案登録請求の範囲第２項記載のプ
ラズマ処理装置。 ４ 前記絶縁表面の長さが電極長さの１／４以下
である実用新案登録請求の範囲第１項〜第３項の
何れかに記載のプラズマ処理装置。 ５ 前記絶縁表面の厚さが少なくとも０．１mmで
ある実用新案登録請求の範囲第１項〜第４項の何
れかに記載のプラズマ処理装置。[Claims for Utility Model Registration] 1. At least one pair of electrodes consisting of a non-grounded electrode 2 and a grounded electrode 5 facing each other in a vacuum container 6, and a long length on the surface of one electrode of the pair of electrodes. It is equipped with a workpiece guiding mechanism including 7 groups of guide rolls for allowing the workpiece 1 to pass through in contact with the workpiece 1, and is equipped with a vacuum forming means in the vacuum container, a plasma generating gas introducing means, and a plasma generating means to the non-grounded electrode. A plasma processing apparatus having a generating voltage applying means, characterized in that an insulating surface including at least the contact initiation portion 3 is formed on the electrode surface with which the object to be processed comes into contact. 2. The plasma processing apparatus according to claim 1, wherein the insulating surface is formed including the area from the edge of the electrode on the side where the object to be treated is introduced to the contact start portion. 3. The plasma processing apparatus according to claim 2, wherein the insulating surface is formed to further include the area from the edge of the electrode on the object to be processed sending side to the part from which separation of the object to be processed begins. 4. The plasma processing apparatus according to any one of claims 1 to 3, wherein the length of the insulating surface is 1/4 or less of the length of the electrode. 5. The plasma processing apparatus according to any one of claims 1 to 4, wherein the thickness of the insulating surface is at least 0.1 mm.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987193395U JPH0198166U (en) | 1987-12-22 | 1987-12-22 | |
| US07/214,179 US4968918A (en) | 1987-07-06 | 1988-07-01 | Apparatus for plasma treatment |
| EP88110707A EP0298420B1 (en) | 1987-07-06 | 1988-07-05 | Apparatus for plasma treatment |
| DE3887933T DE3887933T2 (en) | 1987-07-06 | 1988-07-05 | Plasma processing device. |
| KR1019880008345A KR950001541B1 (en) | 1987-07-06 | 1988-07-06 | Apparatus for plasma treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987193395U JPH0198166U (en) | 1987-12-22 | 1987-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0198166U true JPH0198166U (en) | 1989-06-30 |
Family
ID=31484183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987193395U Pending JPH0198166U (en) | 1987-07-06 | 1987-12-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0198166U (en) |
-
1987
- 1987-12-22 JP JP1987193395U patent/JPH0198166U/ja active Pending
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