JPH0197074A - Infrared ray image pickup device - Google Patents
Infrared ray image pickup deviceInfo
- Publication number
- JPH0197074A JPH0197074A JP62255156A JP25515687A JPH0197074A JP H0197074 A JPH0197074 A JP H0197074A JP 62255156 A JP62255156 A JP 62255156A JP 25515687 A JP25515687 A JP 25515687A JP H0197074 A JPH0197074 A JP H0197074A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- memory
- wall
- temperature
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003331 infrared imaging Methods 0.000 claims description 7
- 238000003384 imaging method Methods 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 17
- 239000007787 solid Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は２次元アレイの固体撮像素子を用いた赤外線
撮像装置における。装置内部からの赤外線輻射による信
号レベルの不均一の補正に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an infrared imaging device using a two-dimensional array of solid-state imaging devices. This invention relates to correction of signal level non-uniformity due to infrared radiation from inside the device.
第２図は固体撮像素子を用いた従来の赤外線撮像装置の
一部を示した構成図である。図において。FIG. 2 is a block diagram showing part of a conventional infrared imaging device using a solid-state imaging device. In fig.
（１）は被写体からの赤外光を集光する赤外線レンズ。(1) is an infrared lens that focuses infrared light from the subject.
（２）は固体撮像素子を内蔵した赤外線検出器であり。(2) is an infrared detector with a built-in solid-state image sensor.
（３）は赤外線検出器（２）が十分な感度を得られるよ
うに冷却するための冷却器である。（４）は赤外線検出
器（２）の出力信号中のビデオ信号分のみを抽出するサ
ンプルホールド回路であシ、サンプルホールド回路（４
）の出力はビデオ信号として出力される。(3) is a cooler for cooling the infrared detector (2) so that it can obtain sufficient sensitivity. (4) is a sample and hold circuit that extracts only the video signal from the output signal of the infrared detector (2).
) is output as a video signal.
第３図は前記赤外線検出器（２）の構造と、赤外光の入
射経路を示した図であシ、 （２ａ）は赤外線を検出す
る固体撮像素子、 （２ｂ）は冷却器（３）によって固
体撮像素子（２ａ）を液体窒素温度付近まで冷却するた
めに断熱効果を得るだめの真空デユワ、 （２ｃ）は赤
外の入射方向を制限するためのコールドシールド、 （
２ａ）は赤外を透過する真空デニワの窓である。Figure 3 is a diagram showing the structure of the infrared detector (2) and the incident path of infrared light, (2a) is a solid-state image sensor that detects infrared light, (2b) is a cooler (3). (2c) is a vacuum dewar to obtain a heat insulating effect to cool the solid-state image sensor (2a) to near the temperature of liquid nitrogen; (2c) is a cold shield to limit the direction of incidence of infrared light;
2a) is a vacuum Deniwa window that transmits infrared light.
コールドシールド（２Ｃ）の開口部の寸法は、第３図に
示すように赤外線レンズ（１）を通して入射する赤外光
が固体撮像素子（２ａ）の受光面の端においてクランな
いような寸法に設定されている。The dimensions of the opening of the cold shield (2C) are set so that the infrared light entering through the infrared lens (1) does not clank at the edge of the light-receiving surface of the solid-state image sensor (2a), as shown in Figure 3. has been done.
第４図は固体撮像素子（２ａ）の受光面の中央と端の画
素に入射する赤外線の経路を示した図であるが、固体撮
像素子（２ａ）の受光面寸法が大きくなると図中の破線
で示すような経路で装置内壁（５）からの赤外線の輻射
を受ける。FIG. 4 is a diagram showing the path of infrared rays incident on pixels at the center and edge of the light-receiving surface of the solid-state image sensor (2a). The device receives infrared radiation from the inner wall (5) of the device through a path as shown in FIG.
第５図は固体撮像素子（２ａ）中の１画素に入射する赤
外線の経路範囲を示した図でｔｊシ１図中斜線を施した
面Ｓ１は固体撮像素子（２ａ）から距離Ｒの面において
、固体撮像素子（２ａ）中の微少面積Ｓｄの１画素に入
射する装置内壁＜５１からの赤外線が通過する領域の面
積であ’）ｅ Ｓｏは赤外線レンズ（１）を通して被
写体から入射する赤外線が通過する領域の面積である。Figure 5 is a diagram showing the path range of infrared rays incident on one pixel in the solid-state image sensor (2a), and the shaded surface S1 in Figure 1 is at a distance R from the solid-state image sensor (2a). , So is the area of the area through which the infrared rays from the device inner wall < 51 pass, which are incident on one pixel with a small area Sd in the solid-state image sensor (2a). This is the area of the area through which it passes.
コールドシールドは固体撮像素子（２ａ）と同様に液体
窒素温度付近まで冷却されるため、その赤外線放射量は
非常に小さく、装置内壁（５）の赤外線放射量に比べて
無視できる。従って。Like the solid-state image sensor (2a), the cold shield is cooled to near the temperature of liquid nitrogen, so the amount of infrared radiation it emits is extremely small and can be ignored compared to the amount of infrared radiation from the inner wall (5) of the device. Therefore.
ある画素と面８１中の微小面積ａｓとを結んだ直線と、
固体撮像素子（２ａ）の受光面と垂直な方向とのなす角
をθとすると、上記画素の出力信号のうち装置内部から
輻射される赤外線による信号外ｖ１は０）式となる。A straight line connecting a certain pixel and a minute area as in the surface 81,
If the angle between the light-receiving surface of the solid-state image sensor (2a) and the perpendicular direction is θ, the signal v1 due to the infrared rays radiated from the inside of the device among the output signals of the pixels is expressed by equation 0).
ただし、（１）式中におけるＲ（λ）は固体撮像素子（
２ａ）中の各画素の分光感度であり、 Ｎ（λ、Ｔ）は
温度Ｔにおける装置内壁（５）の分光放射輝度である。However, R(λ) in equation (1) is the solid-state image sensor (
2a) is the spectral sensitivity of each pixel in N(λ, T) is the spectral radiance of the device inner wall (5) at temperature T.
ｖｌの値は固体撮像素子（２ａ）中における各画素の位
置によって異なシ、中央の画素が１番大きく端の画素は
ど小さい。The value of vl varies depending on the position of each pixel in the solid-state image sensor (2a), with the center pixel having the largest value and the end pixels having the smallest value.
第６図は画素の位置と、各成分による信号外との関係を
表わした図である。第６図（ａ）は固体撮像素子の受光
面を表わし、同図（ｂ）は同図（ａ）において斜線を施
した中央の１ラインの各画素の出力信号のうち、装置内
部からの赤外ｆｌＡ＠射による信号外ｖ１を表わした図
であり、中央の画素の信号レベルは端の画素の信号レベ
ルよりも大きい。同図（Ｃ）は赤外線レンズ（１）を通
して被写体から入射する赤外線による信号外ＶＱである
。同図（ｄ）は、実際の固体撮像素子（２ａ）の中央１
ラインの出力信号であＪ’ｓｖｏとｖｌが加算された信
号が出力される。FIG. 6 is a diagram showing the relationship between the pixel position and the outside of the signal due to each component. Figure 6(a) shows the light-receiving surface of the solid-state image sensor, and Figure 6(b) shows the red and red signals from inside the device among the output signals of each pixel in the hatched center line in Figure 6(a). It is a diagram showing a signal outside v1 due to outside flA@ radiation, and the signal level of the center pixel is higher than the signal level of the edge pixels. (C) of the same figure shows an extra-signal VQ caused by infrared rays incident from the subject through the infrared lens (1). Figure (d) shows the center 1 of the actual solid-state image sensor (2a).
A signal obtained by adding J'svo and vl is output as a line output signal.
従来の撮像装置のビデオ信号は、上記のように被写体か
ら放射される赤外線による信号の他に。The video signals of conventional imaging devices include, in addition to signals from infrared rays emitted from the subject as described above.
装置内部からの赤外線輻射による信号外が加算されてい
るため、均一温度の被写体を撮像しても画素の位置によ
って信号レベルが異なるうえ、装置内部の温度変化によ
って信号レベルも変化するという問題点があった。Since the extra signal due to infrared radiation from inside the device is added, there is a problem that even if an object with a uniform temperature is imaged, the signal level differs depending on the pixel position, and the signal level also changes depending on the temperature change inside the device. there were.
この発明は、このような問題点を解決するためになされ
たもので、装置内部からの赤外線輻射の影響を自動的に
補正して、均一で、装置内部の温度に影響されないビデ
オ信号を得ることを目的とするものである。This invention was made to solve these problems, and it is possible to automatically correct the influence of infrared radiation from inside the device to obtain a uniform video signal that is not affected by the temperature inside the device. The purpose is to
この発明に係る撮像装置は、装置内壁の温度を検出する
温度センサと、その検出温度によって固体撮像素子の各
画素の信号中における装置内壁からの赤外線輻射による
信号外を求める手段と、固体撮像素子の出力信号から前
記装置内壁からの赤外線輻射による信号外を減算する減
算器を設けたものである。The imaging device according to the present invention includes: a temperature sensor that detects the temperature of the inner wall of the device; a means for determining an outside signal due to infrared radiation from the inner wall of the device in a signal of each pixel of the solid-state image sensor based on the detected temperature; A subtracter is provided for subtracting an extra signal due to infrared radiation from the inner wall of the device from the output signal of the device.
この発明においては、装置内壁の温度を測定し。 In this invention, the temperature of the inner wall of the device is measured.
その温度によって固体撮像素子の各画素における装置内
壁からの赤外線輻射による信号外を求め。Based on the temperature, the signal outside of each pixel of the solid-state image sensor due to infrared radiation from the inner wall of the device is determined.
その信号外を固体撮像素子の出力信号から減算するとと
ｋよシ装置内壁からの赤外線輻射の影響を除去する。By subtracting the outside signal from the output signal of the solid-state image pickup device, the influence of infrared radiation from the inner wall of the device is removed.
第１図はこの発明による赤外線撮像装置の一実施例を示
す構成図であり、＋ＩＩは赤外線レンズ、（２）は赤外
線検出器、（３）は赤外線検出器を冷却する冷却器、（
４）は出力信号中のビデオ信号外のみを抽出するサンプ
ルホールド回路であシ、上記（ｔ１〜（４）は従来装置
と同じである。（６）は装置内壁（５）の温度を検出す
るための温度センサー、（７）は温度センサー（６）の
信号をディジタル信号に変換して出力するＡカ変換器、
（８）は温度を変数として前記（１）式におけるｆＲｃ
λ）・Ｎ（λ、Ｔ） ｄλ の値をあらかじめ記憶して
おく第１のメモリーである。（９）はアドレスカウンタ
ーで、固体撮像素子（２ａ）中の各画素のアドレスを決
定する。Ｑｌは各アドレスに対応した前記（１）Ｓｄ−
ｃｏ！４θ
式中におけるｆ８．−１−ｄｓの値をあらかじめ記憶し
ておく第２のメモリーである。αυは第１のメモリー（
８）と第２のメモリー（１（Ｉの値を乗算する乗算器で
あり、０ｚは乗算器の出力信号をアナログ信号に変換す
るＤ／Ａ変換器である。αｊはサンプルホールド回路（
４）の出力信号からい変換器α２の出力信号を減算する
減算器である。FIG. 1 is a configuration diagram showing an embodiment of an infrared imaging device according to the present invention, +II is an infrared lens, (2) is an infrared detector, (3) is a cooler for cooling the infrared detector, (
4) is a sample and hold circuit that extracts only the outside of the video signal from the output signal, and the above (t1 to (4)) are the same as the conventional device. (6) detects the temperature of the inner wall (5) of the device. (7) is an A converter that converts the signal of the temperature sensor (6) into a digital signal and outputs it.
(8) is fRc in the above equation (1) using temperature as a variable.
λ)·N(λ, T) This is the first memory in which the value of dλ is stored in advance. (9) is an address counter that determines the address of each pixel in the solid-state image sensor (2a). Ql is the above (1) Sd- corresponding to each address.
co! f8 in the 4θ formula. This is a second memory in which the value of -1-ds is stored in advance. αυ is the first memory (
8) and the second memory (1 (It is a multiplier that multiplies the value of I, 0z is a D/A converter that converts the output signal of the multiplier into an analog signal. αj is a sample and hold circuit (
This subtracter subtracts the output signal of the converter α2 from the output signal of 4).
上記のように構成された赤外線撮像装置においては、温
度センサー（６）で測定され、 Ａ／’［）変換器（７
）においてディジタル信号に変換された温度測定値を第
１のメモリー（８）のアドレスに加えることにより第１
のメモ＋） −（８）の出力として前記（！）式中にお
けるｆＲＣλ）・Ｎ（λ、Ｔ） ｄλの値が得られる。In the infrared imaging device configured as described above, the temperature is measured by the temperature sensor (6), and the temperature is measured by the A/'[) converter (7
) by adding the temperature measurement value converted into a digital signal to the address of the first memory (8).
The value of fRCλ)·N(λ, T) dλ in the above formula (!) is obtained as the output of +)−(8).
一方。on the other hand.
アドレスカウンター（９）の出力を第２のメモリー〇〇
のアドレスに加えることにより各画素に対応する従って
９乗算器αυにおいて第１のメモＩＪ −＋８１の出力
と、第２のメモリー〇〇の出力とを乗算することにより
各画素に対応した前記（１）式のｖｌ 、つまり装置内
部から輻射される赤外線による信号分が得られる。これ
をＤ／Ａ変換器αりによりアナログ信号に変換すること
により、第６図（１））と同じ信号が得られる。従って
、サンプルホールド回路（４）の出力信号からＤ／Ａ変
換器（１３の出力信号を減算器αｊにより減算すること
によ抄、装置内壁（５）からの赤外線輻射による信号分
を除去することができる。By adding the output of the address counter (9) to the address of the second memory 〇〇, the output of the first memory IJ - +81 and the output of the second memory 〇〇 correspond to each pixel. By multiplying by , vl of the above equation (1) corresponding to each pixel, that is, the signal component due to infrared rays radiated from inside the device is obtained. By converting this into an analog signal using a D/A converter α, the same signal as in FIG. 6(1)) can be obtained. Therefore, by subtracting the output signal of the D/A converter (13) from the output signal of the sample and hold circuit (4) using the subtractor αj, the signal due to infrared radiation from the inner wall (5) of the device can be removed. Can be done.
−〔発明の効果〕
以上のようにこの発明によれば、装置内壁の温度を検出
して装置内壁からの赤外線輻射による各画素の信号分を
求める手段を設け、その信号を固体撮像素子の出力信号
から減算するように構成したので、装置内壁の赤外線輻
射による影響を除去することができる。- [Effects of the Invention] As described above, according to the present invention, a means is provided to detect the temperature of the inner wall of the device and obtain a signal of each pixel due to infrared radiation from the inner wall of the device, and the signal is outputted from the solid-state image sensor. Since it is configured to be subtracted from the signal, the influence of infrared radiation from the inner wall of the device can be removed.
第１図はこの発明による赤外線撮像装置の一実施例を示
す構成図、第２図は従来の赤外線撮像装置の構成図、第
３図は赤外線検出器の構成図、′第４図は固体撮像素子
に入射する赤外線の経路を示す図、第５図は固体撮像素
子の１画素に入射する赤外線の経路範囲を示した図、第
６図は各入射成分による固体撮像素子の出力信号の例を
示す図である。
図において、 （２ａ）は固体撮像素子、 （２ｃ
）はコールドシールド、（３）は冷却器、（５）は装置
内壁、（６）は温度センサー、（８）は第１のメモリー
、（９１はアドレスカウンター、ａｌは第２のメモリー
、ａυは乗算器、 （１３は減算器である。
なお、各図中、同一符号は同一または相当部分を示す。Fig. 1 is a block diagram showing an embodiment of an infrared imaging device according to the present invention, Fig. 2 is a block diagram of a conventional infrared imaging device, Fig. 3 is a block diagram of an infrared detector, and Fig. 4 is a solid-state imaging device. Figure 5 is a diagram showing the path of infrared rays incident on the element, Figure 5 is a diagram showing the path range of infrared rays incident on one pixel of the solid-state image sensor, and Figure 6 is an example of the output signal of the solid-state image sensor due to each incident component. FIG. In the figure, (2a) is a solid-state image sensor, (2c
) is the cold shield, (3) is the cooler, (5) is the inner wall of the device, (6) is the temperature sensor, (8) is the first memory, (91 is the address counter, al is the second memory, aυ is A multiplier (13 is a subtracter. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
像素子と、上記固体撮像素子に入射する赤外光の経路を
制限するコールドシールドと、装置内壁の温度を検出す
る温度センサーと、装置内壁の温度を変数として上記固
体撮像素子の感度と装置内壁の放射輝度の乗算値を記憶
した第１のメモリーと、上記固体撮像素子の各画素のア
ドレスを決めるアドレスカウンターと、上記各画素が装
置内壁から受ける赤外線量の相対値を上記各画素のアド
レスに対応して記憶した第２のメモリーと、上記第１の
メモリーと第２のメモリーの出力値を乗算する乗算器と
、上記乗算器により得られる乗算値を固体撮像素子の出
力値から減算する減算器とを備えたことを特徴とする赤
外線撮像装置。A solid-state image sensor that is cooled to a low temperature by a cooler to detect infrared rays, a cold shield that restricts the path of infrared light that enters the solid-state image sensor, a temperature sensor that detects the temperature of the inner wall of the device, and a temperature sensor that detects the temperature of the inner wall of the device. a first memory that stores the multiplication value of the sensitivity of the solid-state image sensor and the radiance of the inner wall of the apparatus using temperature as a variable; an address counter that determines the address of each pixel of the solid-state image sensor; a second memory that stores the relative value of the amount of infrared rays received corresponding to the address of each pixel; a multiplier that multiplies the output values of the first memory and the second memory; An infrared imaging device comprising: a subtracter that subtracts a multiplied value from an output value of a solid-state imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62255156A JPH0197074A (en) | 1987-10-09 | 1987-10-09 | Infrared ray image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62255156A JPH0197074A (en) | 1987-10-09 | 1987-10-09 | Infrared ray image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0197074A true JPH0197074A (en) | 1989-04-14 |
Family
ID=17274845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62255156A Pending JPH0197074A (en) | 1987-10-09 | 1987-10-09 | Infrared ray image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0197074A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589876A (en) * | 1993-09-28 | 1996-12-31 | Nec Corporation | Infrared imaging device readily removing optical system contributory component |
| JPH0968604A (en) * | 1995-06-06 | 1997-03-11 | Hughes Missile Syst Co | Solid catadioptric lens |
-
1987
- 1987-10-09 JP JP62255156A patent/JPH0197074A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5589876A (en) * | 1993-09-28 | 1996-12-31 | Nec Corporation | Infrared imaging device readily removing optical system contributory component |
| JPH0968604A (en) * | 1995-06-06 | 1997-03-11 | Hughes Missile Syst Co | Solid catadioptric lens |
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