JPH0196383A - Method for plating transparent conductive film pattern - Google Patents
Method for plating transparent conductive film patternInfo
- Publication number
- JPH0196383A JPH0196383A JP25315887A JP25315887A JPH0196383A JP H0196383 A JPH0196383 A JP H0196383A JP 25315887 A JP25315887 A JP 25315887A JP 25315887 A JP25315887 A JP 25315887A JP H0196383 A JPH0196383 A JP H0196383A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transparent conductive
- conductive film
- plating
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000007772 electroless plating Methods 0.000 claims abstract description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 8
- 239000011521 glass Substances 0.000 abstract description 20
- 239000003795 chemical substances by application Substances 0.000 abstract description 6
- 230000000873 masking effect Effects 0.000 abstract description 6
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- -1 palladium ions Chemical class 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1896—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by electrochemical pretreatment
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Liquid Crystal (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶パネルなど透明な無機ガラス、有機フィ
ルム上に形成される透明導電膜パターン上へ選択的にめ
っきを施す方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for selectively plating a transparent conductive film pattern formed on a transparent inorganic glass or organic film such as a liquid crystal panel. .
透明導電膜パターン上の所定部分をパラジウムを含む活
性液で陽極電解しパラジウムイオンを析出させた後、無
電解めっきを行うことにより、所望とする透明導電膜パ
ターン上へ選択的にめっきを形成する方法を提供するも
のである。A predetermined portion of the transparent conductive film pattern is anodically electrolyzed with an active solution containing palladium to deposit palladium ions, and then electroless plating is performed to selectively form plating on the desired transparent conductive film pattern. The present invention provides a method.
液晶パネルにおいては、大型化、高密度化に伴い高信頼
性実装法として、端子部のメタライズがなされている。In liquid crystal panels, metallization of terminal portions is being used as a highly reliable mounting method as the size and density of liquid crystal panels increases.
従来液晶パネル基板としては、ソーダガラス、硬質ガラ
スなどの無機材料、ポリエステル、ポリエーテルサルフ
ォン樹脂等の有機材料がある。このような基板上に酸化
スズ又は、ＩＴＯなどの透明導電膜は、スパッタ、蒸着
、ＣＶＤ法などより形成された後、フォトリソグラフィ
ーにより所定のパターンにエツチングされる０次に透明
導電膜上にメタライズする方法としては、蒸着、スパッ
タなどのドライめっき法と、ウェットめっき法がある。Conventional liquid crystal panel substrates include inorganic materials such as soda glass and hard glass, and organic materials such as polyester and polyether sulfone resin. A transparent conductive film such as tin oxide or ITO is formed on such a substrate by sputtering, vapor deposition, CVD, etc., and then metalized on the zero-order transparent conductive film that is etched into a predetermined pattern by photolithography. Methods for this include dry plating methods such as vapor deposition and sputtering, and wet plating methods.
しかし、ドライめっき法は、装置が高価なものとなり、
またバッチ処理のため量産性に欠けるなどの問題がある
。一般的には処理コストが安価で自由形状のものにメタ
ライズ可能なウェットめワき法がとられている。ガラス
基板上に形成された透明導電股上のウェットめっきは、
めっき性。However, dry plating requires expensive equipment and
In addition, there are problems such as a lack of mass productivity due to batch processing. In general, a wet finishing method is used, which has low processing costs and allows metallization into free-form shapes. The wet plating on the transparent conductive crotch formed on the glass substrate is
Plating properties.
密着性などの点で優れている無電解めっきが採用されて
いる。これらの無電解めっき法は、被めっき物を樹脂、
酸洗い後、塩化スズ、塩化パラジウムを含む触媒付与液
に浸漬しその後、フン化物を含む活性液へ浸漬する。こ
の活性液の浸漬は、ガラス基板および透明導電膜上に付
着した触媒（パラジウム）を活性化させる他、ガラス基
板に付着した触媒をＮＷｄさせるものである。その後、
無電解ニッケルめっき、無電解銅めっきを施すことによ
り透明導電股上のみに選択的にめっきがなされるもので
あった。Electroless plating is used because it has excellent adhesion. In these electroless plating methods, the object to be plated is resin,
After pickling, it is immersed in a catalyst-imparting solution containing tin chloride and palladium chloride, and then in an activation solution containing fluoride. This immersion in the active liquid activates the catalyst (palladium) attached to the glass substrate and the transparent conductive film, and also causes the catalyst attached to the glass substrate to become NWd. after that,
By applying electroless nickel plating and electroless copper plating, only the transparent conductive crotch was selectively plated.
しかし、これら一連の工程の中で、選択性を出す活性液
は、フン化物が含有されているためガラス基板を浸す問
題があった。また、耐薬品性のある硬質ガラス基板では
、ガラス面にもめっきが析出してしまうなど選択性の点
で問題があった０本発明は、これら問題点を解決するた
めに行われたものである。However, in this series of steps, the active liquid that provides selectivity contains fluoride, which has the problem of immersing the glass substrate. In addition, with chemical-resistant hard glass substrates, there were problems with selectivity, such as plating depositing on the glass surface.The present invention was made to solve these problems. be.
本発明は、上記問題点を解決するため、透明導電膜パタ
ーンの所定部分を塩化パラジウムを含む活性液中で陽極
添加電解を行い、活性液中のパラジウムイオンを透明導
電膜（酸化スズ、ＩＴＯなど）上にパラジウムを完全に
析出させた後、無電解めっきを行うことにより、ガラス
基板をいためずかつ、選択性良好な透明導電膜上へのめ
っきを形成する方法を見出したものである。In order to solve the above-mentioned problems, the present invention performs anodic electrolysis on a predetermined portion of a transparent conductive film pattern in an active solution containing palladium chloride, and transfers palladium ions in the active solution to a transparent conductive film (such as tin oxide, ITO, etc.). ) We have discovered a method for forming plating on a transparent conductive film with good selectivity without damaging the glass substrate by performing electroless plating after completely depositing palladium on the glass substrate.
以下、本発明の実施について第１図をもとに説明する。 Hereinafter, implementation of the present invention will be explained based on FIG.
第１図は、液晶パネルの外部端子部分の斜視図である。FIG. 1 is a perspective view of an external terminal portion of a liquid crystal panel.
１は硬質ガラス基板、２は硬質ガラス上に蒸着法で形成
された複数のＩＴＯ透明電極膜、３は半田付は接合する
ためのメタライズ端子部分、４はめっき析出防止のため
のマスキング剤、５は透明電極端子間を短絡させるため
のＩＴＯ透明導電膜である。1 is a hard glass substrate, 2 is a plurality of ITO transparent electrode films formed by vapor deposition on hard glass, 3 is a metallized terminal part for soldering, 4 is a masking agent for preventing plating precipitation, 5 is an ITO transparent conductive film for short-circuiting between transparent electrode terminals.
まず、ガラス基板ｌ上に透明導電膜２をパターニングし
、メタライズ不要部分をマスキング剤４によりマスクし
、次いでこれらを脱脂、酸洗いし水洗後、塩化パラジウ
ムを主成分とする活性液（カニゼン社製レソドシューマ
）中で透明電極を陽極に電解処理した。First, a transparent conductive film 2 is patterned on a glass substrate 1, and parts that do not require metallization are masked with a masking agent 4, and then these are degreased, pickled, and washed with water. The transparent electrode was electrolytically treated as an anode in a resodosummer.
電解電圧 １．５〜３■
温 度 室温
時 間 １〜３分
陰 極 カーボン
次に水洗後、無電解ニッケルめっき（カニゼン社製品Ｓ
−６８０）５０℃、７分間のめっきして約０．５ミクロ
ンのＮｉ −Ｐ被膜を透明電極上に選択的に形成した。Electrolytic voltage: 1.5 to 3 ■ Temperature: Room temperature time: 1 to 3 minutes Cathode electrode Carbon, then washed with water, electroless nickel plating (Kanigen product S
-680) A Ni-P film of about 0.5 micron was selectively formed on the transparent electrode by plating at 50° C. for 7 minutes.
その後、透明電極間を繋ぐ端子５を切断し、マスキング
剤を除去した後、２５０℃、３０分の熱処理を行った。Thereafter, the terminal 5 connecting the transparent electrodes was cut, the masking agent was removed, and then heat treatment was performed at 250° C. for 30 minutes.
このようにして得られた無電解めっきは、透明電極パタ
ーンの所定部分に良好なめっき被膜を形成し、また、ガ
ラス基板の損傷も全く見られなかった。The electroless plating thus obtained formed a good plating film on a predetermined portion of the transparent electrode pattern, and no damage to the glass substrate was observed.
本発明の実施例では、透明絶縁基板に硬質ガラスを用い
たが、ソーダガラス、石英ガラス９．などの無機材料、
また、ポリエステルなどの有機フィルムであっても同様
な効果を得ることが可能である。In the embodiment of the present invention, hard glass was used for the transparent insulating substrate, but soda glass, quartz glass, etc. Inorganic materials such as
Further, the same effect can be obtained even with an organic film such as polyester.
以上詳述したように、本発明によれば、所望とする透明
Ｒ電膜パターン上のメタライズをする場合、透明Ｒ電膜
パターン部分を塩化パラジウムを含む活性液中で陽極電
解処理を行いパラジウムを付着させた後無電解めっきを
施すことにより、処理によるガラス基板に損傷を与える
ことなく、選択的な無電解めっき被膜を形成することが
でき、信軌性の高い液晶パネルなどの実装を可能とした
ものでその効果は大きい。As detailed above, according to the present invention, when metallizing a desired transparent R electrical film pattern, the transparent R electrical film pattern is subjected to anodic electrolysis treatment in an active solution containing palladium chloride to remove palladium. By applying electroless plating after adhesion, a selective electroless plating film can be formed without damaging the glass substrate during processing, making it possible to mount high-fidelity liquid crystal panels, etc. The effect is great.
第１図は液晶パネル外部端子部の斜視図である。 ｌ・・・ガラス基板（透明絶縁基板） ２・・・透明電極（ＩＴＯ膜） ３・・・透明電極メタライズ必要部分 ４・・・マスキング剤 ５・・・透明電極間を結ぶ端子（ＩＴＯ膜）以上 出願人 セイコー電子工業株式会社 ８１図 FIG. 1 is a perspective view of the external terminal section of the liquid crystal panel. l...Glass substrate (transparent insulating substrate) 2...Transparent electrode (ITO film) 3... Part where transparent electrode metallization is required 4... Masking agent 5... Terminal (ITO film) connecting between transparent electrodes or more Applicant: Seiko Electronics Industries Co., Ltd. Figure 81
Claims (1)
部分を、パラジウムを含む活性液中で電解処理を行いパ
ラジウムを付着させた後、無電解めっき液を施すことを
特徴とする透明導電膜パターン上へのめっき方法。A transparent conductive film pattern formed on a transparent insulating substrate, wherein a predetermined portion of the transparent conductive film pattern is electrolytically treated in an active solution containing palladium to adhere palladium, and then an electroless plating solution is applied. Top plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25315887A JPH0196383A (en) | 1987-10-07 | 1987-10-07 | Method for plating transparent conductive film pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25315887A JPH0196383A (en) | 1987-10-07 | 1987-10-07 | Method for plating transparent conductive film pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0196383A true JPH0196383A (en) | 1989-04-14 |
Family
ID=17247338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25315887A Pending JPH0196383A (en) | 1987-10-07 | 1987-10-07 | Method for plating transparent conductive film pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0196383A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720211B2 (en) | 1999-05-18 | 2004-04-13 | Sharp Kabushiki Kaisha | Method for fabricating electric interconnections and interconnection substrate having electric interconnections fabricated by the same method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119111A (en) * | 1981-12-31 | 1983-07-15 | エヌ ベー フイリップス フルーイランペンフアブリケン | Method of metallizing partly electrically conductive nonmetallic pattern |
| JPS62134990A (en) * | 1985-12-06 | 1987-06-18 | シチズン時計株式会社 | Surface treatment of circuit substrate |
-
1987
- 1987-10-07 JP JP25315887A patent/JPH0196383A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58119111A (en) * | 1981-12-31 | 1983-07-15 | エヌ ベー フイリップス フルーイランペンフアブリケン | Method of metallizing partly electrically conductive nonmetallic pattern |
| JPS62134990A (en) * | 1985-12-06 | 1987-06-18 | シチズン時計株式会社 | Surface treatment of circuit substrate |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6720211B2 (en) | 1999-05-18 | 2004-04-13 | Sharp Kabushiki Kaisha | Method for fabricating electric interconnections and interconnection substrate having electric interconnections fabricated by the same method |
| US6750475B1 (en) | 1999-05-18 | 2004-06-15 | Sharp Kabushiki Kaisha | Method for fabricating electric interconnections and interconnection substrate having electric interconnections fabricated by the same method |
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