JPH0194998A - Photochemical treatment of waste water - Google Patents
Photochemical treatment of waste waterInfo
- Publication number
- JPH0194998A JPH0194998A JP25139687A JP25139687A JPH0194998A JP H0194998 A JPH0194998 A JP H0194998A JP 25139687 A JP25139687 A JP 25139687A JP 25139687 A JP25139687 A JP 25139687A JP H0194998 A JPH0194998 A JP H0194998A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor
- waste water
- hydrogen peroxide
- oxidizing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002351 wastewater Substances 0.000 title claims abstract description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims abstract description 17
- 239000007800 oxidant agent Substances 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 7
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 20
- 239000004408 titanium dioxide Substances 0.000 claims description 10
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004065 wastewater treatment Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052753 mercury Inorganic materials 0.000 abstract description 3
- 229910052736 halogen Inorganic materials 0.000 abstract description 2
- 150000002367 halogens Chemical class 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract description 2
- 229920000642 polymer Polymers 0.000 abstract description 2
- 229910052724 xenon Inorganic materials 0.000 abstract description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 abstract 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000005297 pyrex Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002903 organophosphorus compounds Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- 229950011008 tetrachloroethylene Drugs 0.000 description 2
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 2
- MLIWQXBKMZNZNF-KUHOPJCQSA-N (2e)-2,6-bis[(4-azidophenyl)methylidene]-4-methylcyclohexan-1-one Chemical compound O=C1\C(=C\C=2C=CC(=CC=2)N=[N+]=[N-])CC(C)CC1=CC1=CC=C(N=[N+]=[N-])C=C1 MLIWQXBKMZNZNF-KUHOPJCQSA-N 0.000 description 1
- -1 .OH1.OH2.02'' Chemical class 0.000 description 1
- DQFYEOSNKPKZBH-UHFFFAOYSA-N OO.[O-2].[O-2].[Ti+4] Chemical compound OO.[O-2].[O-2].[Ti+4] DQFYEOSNKPKZBH-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- OEBRKCOSUFCWJD-UHFFFAOYSA-N dichlorvos Chemical compound COP(=O)(OC)OC=C(Cl)Cl OEBRKCOSUFCWJD-UHFFFAOYSA-N 0.000 description 1
- 239000010840 domestic wastewater Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002896 organic halogen compounds Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000000575 pesticide Substances 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Landscapes
- Catalysts (AREA)
- Treatment Of Water By Oxidation Or Reduction (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は廃水の光化学的処理方法に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a method for photochemical treatment of wastewater.
（従来の技術及び発明が解決しようとする問題点） 従来、工場廃水、生活廃水などの廃水はろ過。(Problems to be solved by conventional technology and invention) Traditionally, wastewater such as factory wastewater and domestic wastewater is filtered.
沈降分離、湿式酸化処理、曝気酸化法、生物処理などの
操作の１種又は２種以上組合わせて用いて浄化処理され
ている。しかし、これらの方法では分解したり、除去し
たりすることが困難な物質が多数あり、また、一般に効
率が低く、かつ、大がかりな装置もしくは広大な面積を
必要とするものが多い。Purification treatment is performed using one or a combination of two or more of the following operations: sedimentation separation, wet oxidation treatment, aerated oxidation method, biological treatment, etc. However, there are many substances that are difficult to decompose or remove using these methods, and the efficiency is generally low, and many of them require large-scale equipment or a large area.
（問題点を解決するための手段）
本発明者らはこのような従来の廃水の処理方法の難点を
克服するため種々検討を重ねた結果、半導体粉末を光照
射することによって半導体の表面に強力な酸化力と還元
力を生じさせることができるが、この作用により、従来
困難であった多くの有機物や無機物を分解し、またある
種の無機物を沈殿させることができること、さらにこの
半導体の作用は酸化剤の存在下で一層促進しうることを
見出し、この知見に基づき本発明を完成するに至った。(Means for Solving the Problems) The present inventors have conducted various studies to overcome the difficulties of conventional wastewater treatment methods, and have found that by irradiating the semiconductor powder with light, the surface of the semiconductor can be strongly irradiated with light. It is possible to generate strong oxidizing and reducing powers, and this action can decompose many organic and inorganic substances, which was previously difficult, and precipitate certain inorganic substances. It was discovered that the process could be further promoted in the presence of an oxidizing agent, and based on this finding, the present invention was completed.
すなわち本発明は、半導体に酸化剤の存在下て光照射し
、廃水中の有害物質を分解することを特徴とする光化学
的廃水の処理方法を提供するものである。That is, the present invention provides a photochemical wastewater treatment method characterized by irradiating a semiconductor with light in the presence of an oxidizing agent to decompose harmful substances in the wastewater.
本発明において、半導体は廃水中の有害物質の分解反応
によって消費されることなく繰り返し使うことができ、
光触媒作用を奏しているということができる。In the present invention, the semiconductor can be used repeatedly without being consumed by the decomposition reaction of harmful substances in wastewater,
It can be said that it has a photocatalytic effect.
半導体の光触媒作用は、光照射によって半導体の表面に
生ずる電子と正孔が、水及び水中の溶存酸素と反応して
生ずる・ＯＨ１・ＯＨ２，０２″′等のラジカル種の働
きによると考えられる。The photocatalytic effect of semiconductors is thought to be due to the action of radical species such as .OH1.OH2.02'', which are generated when electrons and holes generated on the surface of the semiconductor by light irradiation react with water and dissolved oxygen in the water.
本発明において用いることのできる半導体は紫外光の一
部あるいは可視光を吸収できるように、そのバンドギャ
ップエネルギーがおよそ３．９ｅＶより小さくなければ
ならない。さらに伝導帯の電子により酸化剤が活性化さ
れるように、伝導帯のエネルギーレベルが十分に負でな
ければならない（０，５Ｖ ｖｓ ＮＨＥより負）。ま
た水溶液中での光照射によって溶解しない酸化物半導体
が望ましい、このような半導体としては二酸化チタン、
三酸化タングステン、酸化亜鉛が挙げられる。The semiconductor that can be used in the present invention must have a bandgap energy of less than approximately 3.9 eV so that it can absorb a portion of ultraviolet light or visible light. Furthermore, the energy level in the conduction band must be sufficiently negative (more negative than 0.5V vs NHE) so that the oxidant is activated by the conduction band electrons. In addition, oxide semiconductors that do not dissolve when exposed to light in an aqueous solution are desirable; examples of such semiconductors include titanium dioxide,
Examples include tungsten trioxide and zinc oxide.
本発明において半導体は、どのような形態で用いてもよ
いが、例えば半導体を粉末として廃水中に懸濁させて用
いることも、また高分子膜中に固定して用いることもで
きる。さらに半導体粉末をメンブランフィルタ−等の丈
夫な高分子フィルター中につめて用いることもできる。In the present invention, the semiconductor may be used in any form; for example, the semiconductor may be used as a powder suspended in waste water or fixed in a polymer membrane. Furthermore, the semiconductor powder can also be packed into a durable polymer filter such as a membrane filter.
また酸化剤としては、過酸化水素、次亜塩素酸、過ヨウ
素酸カリウムなどの無機過酸化物か好ましく用いられ、
過酸化水素が特に好ましく用いられる。過酸化水素は市
販の３５％溶液を用いることができる。酸化剤が多すぎ
ても少なすぎても分解効率は悪くなる。適量は対象物の
濃度によって異なり、対象物と等モル濃度から１００倍
までの濃度が適当である。As the oxidizing agent, inorganic peroxides such as hydrogen peroxide, hypochlorous acid, and potassium periodate are preferably used.
Hydrogen peroxide is particularly preferably used. A commercially available 35% solution of hydrogen peroxide can be used. If there is too much or too little oxidizing agent, the decomposition efficiency will deteriorate. The appropriate amount varies depending on the concentration of the target substance, and a concentration ranging from equimolar to 100 times that of the target substance is suitable.
本発明において光照射には半導体のバンドギャップ以上
のエネルギーに相当する波長の光を含む光源を用いなけ
ればならない０例えば半導体が二酸化チタンであや場合
には、４１３ｎｍより短波長光を有する光源でなければ
ならない。また三酸化タングステンでは４５９ｎｍより
短波長光を有する光源でなければならない。このような
光源としては高圧水銀灯、キセノンランプ、ハロゲ・ン
ランプ等が挙げられる。In the present invention, for light irradiation, a light source containing light with a wavelength corresponding to an energy greater than or equal to the band gap of the semiconductor must be used.For example, if the semiconductor is made of titanium dioxide, the light source must have a wavelength shorter than 413 nm. Must be. Further, for tungsten trioxide, the light source must have a wavelength shorter than 459 nm. Examples of such light sources include high-pressure mercury lamps, xenon lamps, and halogen lamps.
照射時間は廃水中の有害物質濃度、光の強度などにより
異なり、有害物質が実質上分解されるまでの時間である
が通常５〜２０ｍｗ／ｃｍ″で、１０分〜１時間である
。The irradiation time varies depending on the concentration of harmful substances in the wastewater, the intensity of light, etc., and is usually 10 minutes to 1 hour at 5 to 20 mw/cm'' until the harmful substances are substantially decomposed.
本発明方法では分解容器に紫外光を透過できる石英ガラ
スを使う必要はなく、通常の耐熱ガラス（パイレックス
ガラス（商品名））の容器を用いることができる。In the method of the present invention, it is not necessary to use quartz glass that can transmit ultraviolet light as the decomposition container, and a container made of ordinary heat-resistant glass (Pyrex glass (trade name)) can be used.
本発明方法により分解できる物質は非常に多く、従来の
方法で処理できるものはもちろん、他の方法では分解し
たり、除去したりすることが困難な物質も分解すること
ができる。例えば有機ハロゲン化合物、界面活性剤、有
機リン化合物、フェノール類、金属キレートなどが挙げ
られるが、これらは本発明方法で分解できる物質の一例
であり、これに限られるものではない０分解が完全に行
われると有機物は炭酸ガスになり、完全に無害化される
。There are a wide variety of substances that can be decomposed by the method of the present invention, and it is possible to decompose not only those that can be treated by conventional methods, but also substances that are difficult to decompose or remove by other methods. For example, organic halogen compounds, surfactants, organic phosphorus compounds, phenols, metal chelates, etc. are examples of substances that can be decomposed by the method of the present invention, and are not limited to these substances. Once this is done, the organic matter turns into carbon dioxide gas, making it completely harmless.
（作用）
光照射によつて半導体の表面に水及び水中の溶存酸素と
反応してラジカル種が生じるが、これらラジカル種は反
応性が大きく、有機物と反応してこれを分解すると考え
られる。過酸化水素などの酸化剤はこのようなラジカル
種を多量に生ぜしめ、分解の効率を飛躍的に向上させる
作用を有する。(Function) Radical species are generated on the surface of the semiconductor by light irradiation by reacting with water and dissolved oxygen in the water, but these radical species are highly reactive and are thought to react with organic substances and decompose them. Oxidizing agents such as hydrogen peroxide generate a large amount of such radical species and have the effect of dramatically improving the efficiency of decomposition.
従来過酸化水素や塩素をこれらが吸収できるきわめて短
波長の光で照射して、直接に励起することにより、ラジ
カル種を生ずる方法が知られている。これに対して、本
発明の方法では過酸化水素（酸化剤）が光を吸収する必
要はなく、半導体が光を吸収できればよい。従って過酸
化水素が吸収する短波長の紫外光を用いる必要はなく、
より長波長の光を用いて本発明を行うことができる。Conventionally, a method is known in which radical species are generated by directly exciting hydrogen peroxide or chlorine by irradiating them with extremely short wavelength light that they can absorb. In contrast, in the method of the present invention, it is not necessary for hydrogen peroxide (oxidizing agent) to absorb light, and it is sufficient that the semiconductor can absorb light. Therefore, there is no need to use short wavelength ultraviolet light that hydrogen peroxide absorbs.
The invention can be practiced using longer wavelength light.
（発明の効果）
本発明方法によれば廃水中の、従来法では処理困難であ
ったような有害物質まで高効率で分解することができる
。さらに本発明方法においては光源として太陽光、ある
いは消費電力の小さい光源を用いて行うことができ、コ
ストが低廉となる。(Effects of the Invention) According to the method of the present invention, it is possible to decompose with high efficiency even harmful substances in wastewater that are difficult to treat using conventional methods. Furthermore, in the method of the present invention, sunlight or a light source with low power consumption can be used as the light source, resulting in low cost.
さらに照射時間を長くとる必要もないことも運転コスト
の低廉化に寄与する。Furthermore, there is no need to take a long irradiation time, which also contributes to lower operating costs.
また、本発明方法は過酸化水素や塩素を直接励起する方
法に比べてコストが低く、またエネルギーの高い紫外光
を用いる場合のような危険性がない利点がある。また全
体の分解の効率も他の方法に比べてきわめて大きい。Furthermore, the method of the present invention has the advantage that it is less expensive than methods that directly excite hydrogen peroxide or chlorine, and does not pose the dangers that occur when using high-energy ultraviolet light. The overall decomposition efficiency is also extremely high compared to other methods.
（実施例） 次に本発明を実施例に基づきさらに詳細に説明する。(Example) Next, the present invention will be explained in more detail based on examples.
実施例１
３０ｄ容のパイレックスガラス製のバイアスビンに５０
ｐｐｍのトリクロロエチレンを含む水溶液２３Ｔｒ１ｉ
ｌを加え、これに過酸化水素の３５％水溶液０．０１ｍ
１を加え、さらに二酸化チタン粉末（粒径１．３ｐ）３
０ｍｇを加えた。これを攪拌して二酸化チタンを懸濁さ
せながら、５００Ｗの高圧水銀灯でパイレックスガラス
製窓付きの水フィルターを通して照射した。１０分間照
射後に、残留トリクロロエチレンをヘッドスペース法に
よりガスクロマトグラフで分析した結果、トリクロロエ
チレンは最初の濃度の８％に減少していた。比較のため
に、上記と同条件の実験を二酸化チタンの存在しない状
態で行った結果、トリクロロエチレンは最初の濃度の９
５％てあった。また過酸化水素を加えないて、二酸化チ
タンのみ用いた場合には、同様の実験でトリクロロエチ
レンは８０％に減少した。Example 1 A 30 d capacity Pyrex glass bias bottle contains 50
Aqueous solution 23Tr1i containing ppm trichlorethylene
1 m of a 35% aqueous solution of hydrogen peroxide.
1 and then titanium dioxide powder (particle size 1.3p) 3
0 mg was added. While stirring to suspend the titanium dioxide, it was irradiated with a 500 W high-pressure mercury lamp through a water filter with a Pyrex glass window. After irradiation for 10 minutes, residual trichlorethylene was analyzed by gas chromatography using a headspace method, and the result showed that the trichlorethylene concentration had decreased to 8% of the initial concentration. For comparison, we conducted an experiment under the same conditions as above without the presence of titanium dioxide, and found that trichlorethylene had an initial concentration of 9.
It was 5%. Furthermore, when only titanium dioxide was used without adding hydrogen peroxide, trichlorethylene was reduced to 80% in a similar experiment.
実施例２
トリクロロエチレンの４ｐｐｍ溶液を用いた以外は実施
例１と全く同様にして、過酸化水素及び二酸化チタンを
加えて、５分間照射した。トリクロロエチレンは最初の
濃度の８％に減少した。Example 2 Hydrogen peroxide and titanium dioxide were added and irradiated for 5 minutes in the same manner as in Example 1 except that a 4 ppm solution of trichlorethylene was used. Trichlorethylene was reduced to 8% of the original concentration.
実施例３
二酸化チタンの代わりに、二酸化タングステン６０１１
ｇを用いた以外は実施例１と全く同様にして、過酸化水
素を加えて、２０分間光照射した。Example 3 Tungsten dioxide 6011 instead of titanium dioxide
Hydrogen peroxide was added and irradiated with light for 20 minutes in the same manner as in Example 1 except that g was used.
トリクロロエチレンは最初の濃度の５０％に減少した。Trichlorethylene was reduced to 50% of the original concentration.
実施例４
トリクロロエチレンの代わりに、テトラクロロエチレン
の２５ｐｐｍ水溶液を用いた以外は実施例１と全く同様
にして、過酸化水素及び二酸化チタンを加えて、１０分
間照射した。テトラクロロエチレンが最初の濃度の１２
％に減少した。Example 4 Hydrogen peroxide and titanium dioxide were added and irradiated for 10 minutes in the same manner as in Example 1 except that a 25 ppm aqueous solution of tetrachlorethylene was used instead of trichlorethylene. The initial concentration of tetrachlorethylene is 12
%.
実施例５
有機リン農薬であるジメチル−２，２−ジクロロビニル
ホスフェートを２２ｐｐｍ含む水溶液３ｍｌ中に二酸化
チタン粉末１５ｍｇを懸濁させ、３５％の過酸化水素水
０．０１ｍ１を加えた。これを実施例１と同様にして５
分間照射した。照射後の試料をクロロホルムで抽出して
、ガスクロマトグラフで分析した結果、有機リン化合物
は検出できなかった。比較のために、過酸化水素を加え
ずに。Example 5 15 mg of titanium dioxide powder was suspended in 3 ml of an aqueous solution containing 22 ppm of dimethyl-2,2-dichlorovinyl phosphate, an organophosphorous pesticide, and 0.01 ml of 35% hydrogen peroxide solution was added. This was done in the same way as in Example 1.
Irradiated for minutes. As a result of extracting the irradiated sample with chloroform and analyzing it with a gas chromatograph, no organic phosphorus compounds could be detected. For comparison, without adding hydrogen peroxide.
同様の実験を行ったところ、５分間の照射で、上記の化
合物は最初の濃度の４５％であった。A similar experiment was performed and after 5 minutes of irradiation, the above compound was at 45% of its initial concentration.
Claims (5)
害物質を分解することを特徴とする光化学的廃水処理方
法。(1) A photochemical wastewater treatment method characterized by irradiating a semiconductor with light in the presence of an oxidizing agent to decompose harmful substances in wastewater.
酸化亜鉛である特許請求の範囲第１項記載の方法。(2) The method according to claim 1, wherein the semiconductor is titanium dioxide, tungsten trioxide, or zinc oxide.
記載の方法。(3) The method according to claim 1, wherein the oxidizing agent is hydrogen peroxide.
て用いる特許請求の範囲第１項記載の方法。(4) The method according to claim 1, in which the semiconductor powder is suspended in wastewater or fixed on a support.
第１項記載の方法。(5) The method according to claim 1, wherein the irradiation light is ultraviolet light and visible light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25139687A JPH0194998A (en) | 1987-10-05 | 1987-10-05 | Photochemical treatment of waste water |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25139687A JPH0194998A (en) | 1987-10-05 | 1987-10-05 | Photochemical treatment of waste water |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0194998A true JPH0194998A (en) | 1989-04-13 |
Family
ID=17222221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25139687A Expired - Lifetime JPH0194998A (en) | 1987-10-05 | 1987-10-05 | Photochemical treatment of waste water |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0194998A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01119394A (en) * | 1987-11-02 | 1989-05-11 | Ebara Res Co Ltd | Treatment of water by photocatalyst |
| US5166466A (en) * | 1990-05-30 | 1992-11-24 | Yamaha Corporation | Musical tone control information input manipulator for electronic musical instrument |
| US5547655A (en) * | 1994-11-28 | 1996-08-20 | Chou; Tse-Chaun | Recovery and regeneration of sulfuric acid |
| JP2002263502A (en) * | 2001-03-07 | 2002-09-17 | Daicel Chem Ind Ltd | Method for oxidizing olefins and method for manufacturing epoxy compound |
| JP2003321313A (en) * | 2002-02-27 | 2003-11-11 | National Institute Of Advanced Industrial & Technology | Sterilizing system by ultraviolet/visible light-active catalyst |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6354992A (en) * | 1986-08-27 | 1988-03-09 | Oji Paper Co Ltd | Photochemical treatment of pulp waste water |
-
1987
- 1987-10-05 JP JP25139687A patent/JPH0194998A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6354992A (en) * | 1986-08-27 | 1988-03-09 | Oji Paper Co Ltd | Photochemical treatment of pulp waste water |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01119394A (en) * | 1987-11-02 | 1989-05-11 | Ebara Res Co Ltd | Treatment of water by photocatalyst |
| JPH0255117B2 (en) * | 1987-11-02 | 1990-11-26 | Ebara Sogo Kenkyusho Kk | |
| US5166466A (en) * | 1990-05-30 | 1992-11-24 | Yamaha Corporation | Musical tone control information input manipulator for electronic musical instrument |
| US5547655A (en) * | 1994-11-28 | 1996-08-20 | Chou; Tse-Chaun | Recovery and regeneration of sulfuric acid |
| JP2002263502A (en) * | 2001-03-07 | 2002-09-17 | Daicel Chem Ind Ltd | Method for oxidizing olefins and method for manufacturing epoxy compound |
| JP2003321313A (en) * | 2002-02-27 | 2003-11-11 | National Institute Of Advanced Industrial & Technology | Sterilizing system by ultraviolet/visible light-active catalyst |
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