JPH0191423A - Surface treating device - Google Patents
Surface treating deviceInfo
- Publication number
- JPH0191423A JPH0191423A JP24782987A JP24782987A JPH0191423A JP H0191423 A JPH0191423 A JP H0191423A JP 24782987 A JP24782987 A JP 24782987A JP 24782987 A JP24782987 A JP 24782987A JP H0191423 A JPH0191423 A JP H0191423A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- nozzle
- reaction
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000012495 reaction gas Substances 0.000 claims abstract description 11
- 238000004381 surface treatment Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 abstract description 23
- 230000005284 excitation Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 238000005086 pumping Methods 0.000 abstract 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は固体表面を処理するドライプロセス装置に係り
、特に半導体素子製造に好適な無損偏の処理を可能とす
る表面処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dry process apparatus for treating the surface of a solid, and particularly to a surface treatment apparatus that enables lossless processing suitable for manufacturing semiconductor devices.
従来の装置は特開昭６１−２２５８１９号に記載のよう
にレーザー光を反応槽外部から導入し、ノズル近傍に集
光することでノズル内反応ガスの励起を行なっていた。In the conventional apparatus, as described in Japanese Patent Application Laid-Open No. 61-225819, a laser beam is introduced from outside the reaction tank and focused near the nozzle to excite the reaction gas in the nozzle.
しかしこのレーザー光によって、ノズル内反応ガスと同
時に余分な反応槽内残留ガスも同時に励起され１反応の
選択性が悪くなる点について配慮されていなかった。However, no consideration was given to the fact that this laser light simultaneously excites the reactant gas in the nozzle and the excess residual gas in the reaction tank, resulting in poor selectivity for one reaction.
上記従来技術は反応槽内残留ガスに対する配慮がされて
おらず、レーザー光によりノズル内部の反応ガスばかり
でなく、反応槽内の残留ガスも同時に励起されるため、
特定の反応だけを選択するという反応の制御性が悪いと
いう問題があった。The above conventional technology does not take into account the residual gas in the reaction tank, and the laser beam excites not only the reaction gas inside the nozzle but also the residual gas in the reaction tank at the same time.
There was a problem in that the controllability of the reaction was poor because only a specific reaction was selected.
本発明の目的は光によって励起する部分を、ノズル内部
に限定することにより、不要な反応槽内残留ガスの励起
を防ぎ、反応の制御性を高め、さらには反応ガスの励起
効率も高めることにある。The purpose of the present invention is to prevent unnecessary excitation of the residual gas in the reaction tank by limiting the part excited by light to the inside of the nozzle, to improve controllability of the reaction, and to also increase the excitation efficiency of the reaction gas. be.
上記目的はノズル内部に光源を備えることにより達成さ
れる。The above object is achieved by providing a light source inside the nozzle.
ノズル内部に備えられた光源からの光はノズル外部には
ほとんどもれない。そのため励起されるのはノズル内部
の反応ガスだけであり、反応槽内残留ガスは励起される
ことはない。Almost no light from the light source provided inside the nozzle leaks to the outside of the nozzle. Therefore, only the reaction gas inside the nozzle is excited, and the gas remaining in the reaction tank is not excited.
以下１本発明の一実施例を第２図により説明する。反応
槽１０内にはサセプタ８が設けられ、それに基板７が取
付けられており、基板の温度はヒータ９により任意の温
度に設定できるようになっている。基板に対向するよう
に反応ガスを噴出させるためのノズル２が、反応ガス導
管３に取付けられている。反応槽１０の内部は、ノズル
２から噴出したガス流を自由膨張流１２とするため、排
気口１１を介して真空ポンプで排気されている。An embodiment of the present invention will be described below with reference to FIG. A susceptor 8 is provided in the reaction tank 10 and a substrate 7 is attached to it, and the temperature of the substrate can be set to an arbitrary temperature by a heater 9. A nozzle 2 for ejecting a reactive gas so as to face the substrate is attached to a reactive gas conduit 3. The inside of the reaction tank 10 is evacuated by a vacuum pump through an exhaust port 11 in order to convert the gas flow ejected from the nozzle 2 into a free expansion flow 12 .
第１図にノズル２の断面図を示す。ノズル２の内部には
低圧水銀灯１が取付けられており、電極６より電流を供
給する。水銀灯の電極付近は、冷却水導入口４．冷却水
出口５を通して水冷を施しており、水銀灯の過熱を防い
でいる。FIG. 1 shows a sectional view of the nozzle 2. A low-pressure mercury lamp 1 is attached inside the nozzle 2, and current is supplied from an electrode 6. Near the electrode of the mercury lamp is the cooling water inlet 4. Water cooling is provided through the cooling water outlet 5 to prevent the mercury lamp from overheating.
反応ガスにはＣＱ ｚを１０％混合したＨａを用いる。Ha mixed with 10% CQz is used as the reaction gas.
反応ガスは反応ガス導管３からノズル２に導かれ、ノズ
ル内において低圧水銀灯１からの光で励起される。その
結果、ＣＱｚは分解し、活性種であるＣＱが生じる。Ｃ
Ｑを含むガスはオリフィス１３から噴出し、自由膨張流
１２となる。こうして得られた活性種の自由膨張流１２
は基板７に吹きつけられ、基板表面で反応し、表面処理
を行なう、特に基板としてＰをドープしたＳｉ基板を用
いることでエツチングを行なうことが可能である。なお
基板をノズルに対して走査できる機構を取付けることに
より、大きな基板に対する均一な処理を行なうことも可
能である。The reactant gas is led from the reactant gas conduit 3 to the nozzle 2 and is excited within the nozzle by light from the low pressure mercury lamp 1. As a result, CQz is decomposed and CQ, which is an active species, is generated. C
The gas containing Q is ejected from the orifice 13 and becomes a free expansion flow 12. The free expanding flow 12 of active species thus obtained
is sprayed onto the substrate 7, reacts on the surface of the substrate, and performs surface treatment. In particular, etching can be performed by using a P-doped Si substrate as the substrate. By attaching a mechanism that can scan the substrate with respect to the nozzle, it is also possible to uniformly process large substrates.
第３図は本発明の別の実施例を示す図である。FIG. 3 is a diagram showing another embodiment of the present invention.
第１図と異なり反応ガスを噴出するノズル２が複数備付
いている。各ノズルにＤ２ランプを取付け。Unlike FIG. 1, a plurality of nozzles 2 are provided to eject reactive gas. Attach a D2 lamp to each nozzle.
５ｉＨａと０２の混合ガスを流すことで大きな基板に対
して５ｉＯｚ膜を形成することが可能である。またこの
装置においては各ノズルに異なった光源を取付け、ある
いは異なった反応ガスを供給することで、より複雑な表
面処理を行なうことも可能である。By flowing a mixed gas of 5iHa and 02, it is possible to form a 5iOz film on a large substrate. Furthermore, in this apparatus, more complex surface treatments can be performed by attaching different light sources to each nozzle or supplying different reaction gases.
なお、本発明は上述した実施例に限定されるものではな
い。表面処理に用いる活性種としては光励起によって分
解または反応した分子ばかりでなく、ＨＦやＸｅ等の振
動励起または電子励起分子を用いることも可能である。Note that the present invention is not limited to the embodiments described above. As the active species used for surface treatment, it is possible to use not only molecules decomposed or reacted by optical excitation, but also vibrationally excited or electronically excited molecules such as HF and Xe.
本発明によれば、ノズル内反応ガスのみがノズル内に取
付けられた光源からの光によって励起され、基板に向け
て噴出されるので、反応槽内残留ガスを光励起すること
がなく１反応の制御性を高めることができ、さらに反応
ガスの励起効率も高められる。According to the present invention, only the reaction gas inside the nozzle is excited by the light from the light source installed inside the nozzle and is ejected toward the substrate, so one reaction can be controlled without optically exciting the residual gas inside the reaction tank. In addition, the excitation efficiency of the reaction gas can also be improved.
第１図は本発明の一実施例に用いられるノズルの断面図
、第２図、第３図は本発明の実施例の断面図である。
１・・・低圧水銀灯、２・・・ノズル、３・・・反応ガ
ス導管、４・・・冷却水導入口、５・・・冷却水出口、
６・・・電極。
７・・・基板、８・・・サセプタ、９・・・ヒータ、１
０・・・反応槽、１１・・・排気口、１２・・・自由膨
張流、１３・・・第 １ 口
名 ２ 口FIG. 1 is a sectional view of a nozzle used in an embodiment of the present invention, and FIGS. 2 and 3 are sectional views of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Low-pressure mercury lamp, 2...Nozzle, 3...Reactant gas conduit, 4...Cooling water inlet, 5...Cooling water outlet,
6...electrode. 7... Substrate, 8... Susceptor, 9... Heater, 1
0...Reaction tank, 11...Exhaust port, 12...Free expansion flow, 13...1st name 2 ports
Claims (1)
基板支持体と、反応槽の壁を貫通し先端に噴出方向が基
板支持体に向かうノズルを有する反応ガス導管を備え、
該ノズル内部に光源を備えたことを特徴とする表面処理
装置。1. A reaction tank that can be evacuated, a substrate support disposed inside the reaction tank, and a reaction gas conduit that penetrates the wall of the reaction tank and has a nozzle at its tip whose ejection direction is directed toward the substrate support,
A surface treatment device comprising a light source inside the nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24782987A JPH0191423A (en) | 1987-10-02 | 1987-10-02 | Surface treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24782987A JPH0191423A (en) | 1987-10-02 | 1987-10-02 | Surface treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0191423A true JPH0191423A (en) | 1989-04-11 |
Family
ID=17169290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24782987A Pending JPH0191423A (en) | 1987-10-02 | 1987-10-02 | Surface treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0191423A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007049128A (en) * | 2005-07-12 | 2007-02-22 | Seiko Epson Corp | Film forming device |
| JP2010510670A (en) * | 2006-11-21 | 2010-04-02 | アプライド マテリアルズ インコーポレイテッド | Independent radiant gas and gas reaction kinetics preheated for precursor dissociation control in low temperature CVD systems |
-
1987
- 1987-10-02 JP JP24782987A patent/JPH0191423A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007049128A (en) * | 2005-07-12 | 2007-02-22 | Seiko Epson Corp | Film forming device |
| JP2010510670A (en) * | 2006-11-21 | 2010-04-02 | アプライド マテリアルズ インコーポレイテッド | Independent radiant gas and gas reaction kinetics preheated for precursor dissociation control in low temperature CVD systems |
| US8663390B2 (en) | 2006-11-21 | 2014-03-04 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
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