JPH0160952B2 - - Google Patents
Info
- Publication number
- JPH0160952B2 JPH0160952B2 JP58227096A JP22709683A JPH0160952B2 JP H0160952 B2 JPH0160952 B2 JP H0160952B2 JP 58227096 A JP58227096 A JP 58227096A JP 22709683 A JP22709683 A JP 22709683A JP H0160952 B2 JPH0160952 B2 JP H0160952B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- channel
- substrate
- electrically floating
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 35
- 238000007667 floating Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 238000005036 potential barrier Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 240000001973 Ficus microcarpa Species 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/373,972 US4473836A (en) | 1982-05-03 | 1982-05-03 | Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays |
| JP58227096A JPS60120558A (ja) | 1983-12-02 | 1983-12-02 | 集積可能な光検出器素子 |
| EP84303983A EP0164464B1 (en) | 1982-05-03 | 1984-06-13 | Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58227096A JPS60120558A (ja) | 1983-12-02 | 1983-12-02 | 集積可能な光検出器素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60120558A JPS60120558A (ja) | 1985-06-28 |
| JPH0160952B2 true JPH0160952B2 (enrdf_load_html_response) | 1989-12-26 |
Family
ID=16855425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58227096A Granted JPS60120558A (ja) | 1982-05-03 | 1983-12-02 | 集積可能な光検出器素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60120558A (enrdf_load_html_response) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282049A (ja) * | 1988-05-09 | 1989-11-13 | Kanto Kasei Kogyo Kk | 車輛用立体薄型マーク |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3018342B2 (ja) * | 1989-02-20 | 2000-03-13 | スズキ株式会社 | 幌付自動車の幌取付構造 |
| CN105518861B (zh) * | 2013-06-20 | 2018-10-02 | 斯坦舍有限公司 | 用于cmos传感器的栅控电荷调制器件 |
-
1983
- 1983-12-02 JP JP58227096A patent/JPS60120558A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282049A (ja) * | 1988-05-09 | 1989-11-13 | Kanto Kasei Kogyo Kk | 車輛用立体薄型マーク |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60120558A (ja) | 1985-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4473836A (en) | Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays | |
| US6512547B1 (en) | Solid-state imaging device and method of detecting optical signals using the same | |
| US5608243A (en) | Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range | |
| EP1711968B1 (en) | Phototransistor | |
| CA1298389C (en) | High dynamic range charge-coupled device | |
| US5317174A (en) | Bulk charge modulated device photocell | |
| US4427990A (en) | Semiconductor photo-electric converter with insulated gate over p-n charge storage region | |
| US5306931A (en) | CCD image sensor with improved antiblooming characteristics | |
| JPS6149822B2 (enrdf_load_html_response) | ||
| US4686555A (en) | Solid state image sensor | |
| JPS61120466A (ja) | 半導体光検出素子 | |
| US4589003A (en) | Solid state image sensor comprising photoelectric converting film and reading-out transistor | |
| US3704376A (en) | Photo-electric junction field-effect sensors | |
| US3985449A (en) | Semiconductor color detector | |
| Kadura et al. | 1T pixel sensor based on FDSOI transistor optical back biasing | |
| KR960002100B1 (ko) | 전하결합소자형 이미지센서 | |
| Zhang et al. | Performance of the floating gate/body tied NMOSFET photodetector on SOI substrate | |
| KR20080023774A (ko) | 씨모스 이미지 센서의 포토 다이오드 | |
| EP0118568A1 (en) | Semiconductor image pickup device | |
| GB1592373A (en) | Photodetector | |
| JPH0160952B2 (enrdf_load_html_response) | ||
| US3329823A (en) | Solid state thin film photosensitive device with tunnel barriers | |
| US4321614A (en) | Radiant energy sensor with blooming control | |
| CA1173542A (en) | Integrable large dynamic range photodetector element for linear and are a integrated circuit imaging arrays | |
| US4140909A (en) | Radiation detector |