JPH0154319B2 - - Google Patents

Info

Publication number
JPH0154319B2
JPH0154319B2 JP10247382A JP10247382A JPH0154319B2 JP H0154319 B2 JPH0154319 B2 JP H0154319B2 JP 10247382 A JP10247382 A JP 10247382A JP 10247382 A JP10247382 A JP 10247382A JP H0154319 B2 JPH0154319 B2 JP H0154319B2
Authority
JP
Japan
Prior art keywords
graphite
quartz crucible
graphite frame
frame
pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10247382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58223689A (ja
Inventor
Hiroshi Yamazaki
Katsumi Hoshina
Shigeru Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP10247382A priority Critical patent/JPS58223689A/ja
Publication of JPS58223689A publication Critical patent/JPS58223689A/ja
Publication of JPH0154319B2 publication Critical patent/JPH0154319B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP10247382A 1982-06-15 1982-06-15 石英ルツボ支持部材 Granted JPS58223689A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10247382A JPS58223689A (ja) 1982-06-15 1982-06-15 石英ルツボ支持部材

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10247382A JPS58223689A (ja) 1982-06-15 1982-06-15 石英ルツボ支持部材

Publications (2)

Publication Number Publication Date
JPS58223689A JPS58223689A (ja) 1983-12-26
JPH0154319B2 true JPH0154319B2 (enrdf_load_stackoverflow) 1989-11-17

Family

ID=14328416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10247382A Granted JPS58223689A (ja) 1982-06-15 1982-06-15 石英ルツボ支持部材

Country Status (1)

Country Link
JP (1) JPS58223689A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
JPH02145496A (ja) * 1988-11-25 1990-06-04 Komatsu Denshi Kinzoku Kk 半導体単結晶引上装置

Also Published As

Publication number Publication date
JPS58223689A (ja) 1983-12-26

Similar Documents

Publication Publication Date Title
JP4108782B2 (ja) 核上に単結晶シリコンカーバイドを形成するための装置および方法
JP2002170780A (ja) ルツボおよびそれを使用した多結晶シリコンの成長方法
JP4569957B2 (ja) 多結晶半導体製造用ルツボ及び多結晶半導体製造方法
EP0525765A1 (en) Apparatus for growing single crystals
JP2020090403A (ja) 単結晶育成用ルツボ、単結晶製造方法及び単結晶
JPH0154319B2 (enrdf_load_stackoverflow)
JPS58190892A (ja) シリコン単結晶引上げ用黒鉛るつぼ
JP4110611B2 (ja) 単結晶製造装置
JP4926633B2 (ja) 単結晶引上げ方法
JP4509258B2 (ja) 単結晶の成長装置および製造方法
JPH089520B2 (ja) 薄膜単結晶の製造方法
JPH0748200A (ja) 単結晶の製造方法
JPH0315550Y2 (enrdf_load_stackoverflow)
JPH0255399B2 (enrdf_load_stackoverflow)
JPS5895693A (ja) 単結晶引上げ用黒鉛ルツボ
JP2766897B2 (ja) 単結晶成長装置
JPH0519337Y2 (enrdf_load_stackoverflow)
JP2781856B2 (ja) 化合物半導体単結晶の製造方法
JPS6217496Y2 (enrdf_load_stackoverflow)
JPS6021900A (ja) 化合物半導体単結晶製造装置
JPH1095688A (ja) 単結晶体の製造方法
JP2000053490A (ja) 溶融ポット支持用支持ルツボ
JPS6339552B2 (enrdf_load_stackoverflow)
JPH0742194B2 (ja) 単結晶の製造装置
JPH08208372A (ja) 単結晶引上げ用黒鉛部品