JPH0150212B2 - - Google Patents

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Publication number
JPH0150212B2
JPH0150212B2 JP56138875A JP13887581A JPH0150212B2 JP H0150212 B2 JPH0150212 B2 JP H0150212B2 JP 56138875 A JP56138875 A JP 56138875A JP 13887581 A JP13887581 A JP 13887581A JP H0150212 B2 JPH0150212 B2 JP H0150212B2
Authority
JP
Japan
Prior art keywords
trans
liquid crystal
cyclohexen
alkylcyclohexyl
nematic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56138875A
Other languages
Japanese (ja)
Other versions
JPS5839629A (en
Inventor
Shigeru Sugimori
Tetsuhiko Kojima
Masakazu Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JNC Corp
Original Assignee
Chisso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chisso Corp filed Critical Chisso Corp
Priority to JP13887581A priority Critical patent/JPS5839629A/en
Priority to US06/358,794 priority patent/US4422951A/en
Priority to DE8282301631T priority patent/DE3260570D1/en
Priority to EP82301631A priority patent/EP0062470B1/en
Publication of JPS5839629A publication Critical patent/JPS5839629A/en
Priority to HK440/89A priority patent/HK44089A/en
Publication of JPH0150212B2 publication Critical patent/JPH0150212B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は広い温度範囲で液晶相を示し、かつ低
粘性の新規な液晶物質に関する。 液晶表示素子は液晶物質が持つ光学異方性及び
誘電異方性を利用したものであるが、その表示模
式によつてTN型(ねじれネマチツク型)、DS型
(動的散乱型)、ゲスト・ホスト型、DAP型など
各種の方式に分けられ、夫々の使用に適する液晶
物質の性質は異なる。しかしいずれの液晶物質も
水分、空気、熱、光等に安定であることが必要で
あることは共通しており、又、室温を中心として
出来るだけ広い温度範囲で液晶を示し、更に表示
素子の種類によつて異なる最適な誘電異方性値
(△ε)を有する様にしなければならない。しか
し現在のところ単一化合物ではこの様な条件を満
たす物質はなく、数値の液晶化合物や非液晶化合
物を混合して得られる液晶組成物を使用している
のが現状である。最近は特に低温(−20℃程度)
から高温(80〜90℃位)にわたつて動作する表示
素子が要求される様になつて来ているので、より
広い温度範囲ですぐれた動作特性を持つた液晶組
成物が要望されている。 本発明の目的はこの様な液晶組成物の一成分と
して有用な、特に低温特性を改善するに適した新
規な液晶化合物を提供することにある。 即ち、本発明は一般式 (上式に於いてRは水素又は炭素数1〜10のアル
キル基を示す。) で表わされる4′−トランス−4″−アルキルシクロ
ヘキシル)シクロヘキサン−1′−イル−ベンゼン
誘導体である。 本発明の()式の化合物は小さい正の誘電異
方性を示し、液晶温度範囲が広く、特に高い透明
点(N−I点又はSm−I点)を持つており、な
おかつ低粘性の化合物であるので、低温から高温
まで広い温度範囲で動作する液晶組成物を得るの
に極めて有用な化合物である。 つぎに本発明の化合物の製造法を示すと、まず
ブロムベンゼン誘導体と金属マグネシウムを反応
させて、フエニルマグネシウムブロミド誘導体と
し、これを4−トランス−4′−アルキルシクロヘ
キシル)シクロヘキサノン(対応するシクロヘキ
サノールを無水クロム酸で酸化することにより得
られる)と反応させて1′−ヒドロキシ−4′−(ト
ランス−4″−アルキルシクロヘキシル)シクロヘ
キシル−ベンゼン誘導体とする。次にこれを硫酸
水素カリウムを触媒として脱水して4′−(トラン
ス−4″−アルキルシクロヘキシル)シクロヘキセ
ン−1′−イル−ベンゼン誘導体を製造した。 以下を化学式で示すと 以下、実施例、比較例により本発明の化合物の
製造法及び使用例について更に詳細に説明する。 比較例 1 〔4′(トランス−4″−ペンチルシクロヘキシル)
シクロヘキセン−1′−イル−ベンゼンの製造〕 マグネシウム切片3.6g(0.148モル)を3つ口
フラスクに入れ、4−ブロモベンゼン23.2g
(0.14モル)をテトラヒドロフランに溶かした溶
液80mlを、窒素気流中で反応温度を30〜35℃に保
ち、撹拌しながらゆつくり滴下して行くと反応し
て3時間でマグネシウムは溶けて均一になりフエ
ニルマグネシウムブロミドを生ずる。これに4−
(トランス−4′−ペンチルシクロヘキシル)シク
ロヘキサノンの29.5g(0.118モル)をテトラヒ
ドロフランに溶かして50mlとしたものを、反応温
度を5〜10℃に保ちつつなるべく速かに滴下す
る。滴下後、35℃まで昇温し30分間撹拌し、つい
で3N塩酸100mlを加える。反応液を分液斗にと
り200mlのn−ペンタンで3回抽出後、合わせた
n−ヘプタン層を水で洗液が中性になるまで洗浄
してからn−ヘプタンを減圧留去する。残留した
油状物は1′−ヒドロキシ−4′−(トランス−4″−ア
ルキルシクロヘキシル)シクロヘキセン−ベンゼ
ンである。 これに硫酸水素カリウム17gを加え窒素気流中
160℃で2時間脱水する。冷却後300mlのn−ヘプ
タンを加えてから硫酸水素カリウムを別し、n
−ヘプタン層を洗液が中性になるまで水洗する。
次いでn−ヘプタンを減圧留去し、残る油状物を
Zn−ヘプタンで再結晶して得られるのが目的の
4′−(トランス−4″−ペンチルシクロヘキシル)
シクロヘキセン−1′−イル−ベンゼンである。こ
のものは結晶−スメクチツク(C−Sm)点69.8
℃、スメクチツク−ネマチツク(Sm−N)点
83.9℃、ネマチツク−透明(N−I)点111.8℃、
収量19.5g、収率42%であつた。 比較例 2〜4 比較例1に示した方法と同様にして、つぎの式
で示す化合物の置換基R1の異なつたものを製造
した。その結果を比較例1の結果と共に第1表に
示す。
The present invention relates to a novel liquid crystal material that exhibits a liquid crystal phase over a wide temperature range and has low viscosity. Liquid crystal display elements utilize the optical anisotropy and dielectric anisotropy of liquid crystal materials, and depending on their display format, there are TN type (twisted nematic type), DS type (dynamic scattering type), guest type, etc. There are various types such as host type and DAP type, and the properties of the liquid crystal materials suitable for each type of use are different. However, all liquid crystal materials have in common that they must be stable against moisture, air, heat, light, etc., and they must exhibit liquid crystallinity over as wide a temperature range as possible, centering on room temperature, and furthermore, they must be stable against moisture, air, heat, light, etc. It must be made to have an optimum dielectric anisotropy value (Δε) that varies depending on the type. However, at present, there is no single compound that satisfies these conditions, and the current situation is to use liquid crystal compositions obtained by mixing numerical liquid crystal compounds and non-liquid crystal compounds. Especially low temperatures recently (about -20℃)
Since there is an increasing demand for display elements that operate at high temperatures (approximately 80 to 90° C.), there is a need for liquid crystal compositions that have excellent operating characteristics over a wider temperature range. An object of the present invention is to provide a novel liquid crystal compound useful as a component of such a liquid crystal composition, particularly suitable for improving low-temperature properties. That is, the present invention is based on the general formula (In the above formula, R represents hydrogen or an alkyl group having 1 to 10 carbon atoms.) It is a 4'-trans-4''-alkylcyclohexyl)cyclohexan-1'-yl-benzene derivative represented by the following formula. This invention The compound of the formula () exhibits small positive dielectric anisotropy, has a wide liquid crystal temperature range, has a particularly high clearing point (N-I point or Sm-I point), and is a low viscosity compound. Therefore, it is an extremely useful compound for obtaining liquid crystal compositions that operate in a wide temperature range from low to high temperatures. , a phenylmagnesium bromide derivative, which is reacted with 4-trans-4'-alkylcyclohexyl)cyclohexanone (obtained by oxidizing the corresponding cyclohexanol with chromic anhydride) to give 1'-hydroxy-4'- (trans-4″-alkylcyclohexyl)cyclohexyl-benzene derivative. Next, this was dehydrated using potassium hydrogen sulfate as a catalyst to produce a 4'-(trans-4''-alkylcyclohexyl)cyclohexen-1'-yl-benzene derivative. The chemical formula is shown below. Hereinafter, the manufacturing method and usage examples of the compound of the present invention will be explained in more detail with reference to Examples and Comparative Examples. Comparative example 1 [4′ (trans-4″-pentylcyclohexyl)
Production of cyclohexen-1'-ylbenzene] Place 3.6 g (0.148 mol) of magnesium pieces in a three-necked flask, and add 23.2 g of 4-bromobenzene.
(0.14 mol) dissolved in tetrahydrofuran, the reaction temperature was maintained at 30-35℃ in a nitrogen stream, and the reaction was slowly dripped while stirring. The magnesium was dissolved and became homogeneous in 3 hours. This produces phenylmagnesium bromide. 4-
29.5 g (0.118 mol) of (trans-4'-pentylcyclohexyl)cyclohexanone dissolved in tetrahydrofuran to make 50 ml is added dropwise as quickly as possible while maintaining the reaction temperature at 5 to 10°C. After dropping, the temperature was raised to 35°C, stirred for 30 minutes, and then 100ml of 3N hydrochloric acid was added. The reaction solution was taken into a separatory funnel and extracted three times with 200 ml of n-pentane.The combined n-heptane layers were washed with water until the washings became neutral, and then the n-heptane was distilled off under reduced pressure. The remaining oil is 1'-hydroxy-4'-(trans-4''-alkylcyclohexyl)cyclohexene-benzene. To this, 17 g of potassium hydrogen sulfate was added and the mixture was heated in a nitrogen stream.
Dehydrate at 160℃ for 2 hours. After cooling, add 300ml of n-heptane, remove potassium hydrogen sulfate, and add n-heptane.
- Wash the heptane layer with water until the washing solution becomes neutral.
Next, n-heptane was distilled off under reduced pressure, and the remaining oil was
The desired product is obtained by recrystallizing with Zn-heptane.
4′-(trans-4″-pentylcyclohexyl)
Cyclohexen-1'-yl-benzene. This one has a crystal-smectic (C-Sm) point of 69.8
°C, Smektik-Nematic (Sm-N) point
83.9℃, nematic clear (N-I) point 111.8℃,
The yield was 19.5 g, 42%. Comparative Examples 2 to 4 Compounds represented by the following formulas with different substituents R 1 were produced in the same manner as in Comparative Example 1. The results are shown in Table 1 together with the results of Comparative Example 1.

【表】 実施例 1 〔4−〔4″−(トランス−4−プロピルシクロ
ヘキシル)シクロヘキセン−1″−イル〕ビフエ
ニル(()式でR=C3H7のもの)の製造〕 マグネシウム切片3.6g(0.148モル)を3つ口
フラスコに入れ、4−ブロモビフエニル34.5g
(0.148モル)をテトラヒドロフランに溶かした溶
液100mlを、窒素気流中で反応温度を30〜35℃に
保ち、撹拌しながらゆつくり滴下して行くと反応
して3時間でマグネシウムは溶けて均一になり、
ビフエニルマグネシウムプロミドを生ずる。これ
に4−(トランス−4′−プロピルシクロヘキシル)
シクロヘキサノンの26.2g(0.118モル)をテト
ラヒドロフランに溶かして50mlとしたものを、反
応温度を5〜10℃に保ちつつなるべく速かに滴下
する。滴下後、35℃まで昇温し30分間撹拌し、つ
いで3N塩酸100mlを加える。反応液を分液斗に
とり100mlのトルエンで3回抽出後、合わせたト
ルエン層を水で洗液が中性になるまで洗浄してか
らトルエンを減圧留去する。残留した油状物は4
−〔1″−ヒドロキシ−4″−(トランス−4−プロ
ピルシクロヘキシル)シクロヘキシル〕ビフエニ
ルである。 これに硫酸水素カリウム15gを加え窒素気流中
160℃で2時間脱水する。冷却後500mlのトルエン
を加えてから硫酸水素カリウムを別し、トルエ
ン層を洗液が中性になるまで水洗する。次いでト
ルエンを減圧留去し、残留物をn−ヘプタンで再
結晶して得られるのが目的の4−〔4″−(トランス
−4−プロピルシクロヘキシル)シクロヘキセ
ン−1″−イル〕ビフエニルである。このものは結
晶−スメクチツク(C−Sm)点98.2℃、スメク
チツク−ネマチツク(Sm−N)点217.4℃、ネマ
チツク−透明(N−I)点265.8℃、収量9.4g、
収率20%であつた。このものが目的物であること
はNMRスペクトル、IR吸収スペクトル、元素分
析で確認した。 実施例 2(使用例) トランス−4−プロピル−(4′シアノフエニル)
シクロヘキサン 28% トランス−4−ペンチル−(4′−シアノフエニル)
シクロヘキサン 43% トランス−4−ヘプチル−(4′−シアノフエニル)
シクロヘキサン 29% なる組成の液晶組成物のネマチツク温度範囲は−
3〜52℃、誘電異方性値△εは10.5、しきい値電
圧は1.53V、飽和電圧は2.12Vである。 この液晶組成物90部に実施例1で製造した4−
〔4″−(トランス−4−プロピルシクロヘキシ
ル)シクロヘキセン−1″−イル〕ビフエニルを10
部加えた液晶混合物のネマチツク温度範囲は−5
〜+78℃に広がり、△εは+9.2、しきい電圧は
1.62V、飽和電圧は2.35Vと上昇しているが、粘
度は23.1cpであつた。 比較例 5 トランス−4−プロピル−(4′−シアノフエニル)
シクロヘキサン 28% トランス−4−ペンチル−(4′−シアノフエニル)
シクロヘキサン 43% トランス−4−ヘプチル−(4′−シアノフエニル)
シクロヘキサン 29% なる組成の液晶組成物のネマチツク温度範囲は−
3〜52℃、誘電異方性値△εは10.5、しきい値電
圧は1.53V、飽和電圧は2.12Vである。 この液晶組成物90部に比較例1で製造した4′−
(トランス−4″−ペンチルシクロヘキシル)シク
ロヘキセン−1′−イル−ベンゼン10部を加えた液
晶混合物のネマチツク温度範囲は−5〜58℃、△
εは+9.0、しきい電圧は1.60V、飽和電圧は
2.30V、粘度は23cpであつた。
[Table] Example 1 [Production of 4-[4″-(trans-4-propylcyclohexyl)cyclohexen-1″-yl]biphenyl (formula () where R=C 3 H 7 )] 3.6 g of magnesium slices (0.148 mol) into a three-necked flask, and 34.5 g of 4-bromobiphenyl
(0.148 mol) dissolved in tetrahydrofuran was slowly added dropwise while stirring in a nitrogen stream while keeping the reaction temperature at 30-35°C. The reaction occurred and the magnesium was dissolved and became homogeneous in 3 hours. ,
Produces biphenylmagnesium bromide. To this, 4-(trans-4'-propylcyclohexyl)
26.2 g (0.118 mol) of cyclohexanone was dissolved in tetrahydrofuran to make 50 ml and added dropwise as quickly as possible while maintaining the reaction temperature at 5 to 10°C. After dropping, the temperature was raised to 35°C, stirred for 30 minutes, and then 100ml of 3N hydrochloric acid was added. The reaction solution is placed in a separator and extracted three times with 100 ml of toluene. The combined toluene layers are washed with water until the washings become neutral, and the toluene is distilled off under reduced pressure. The remaining oil is 4
-[1″-hydroxy-4″-(trans-4-propylcyclohexyl)cyclohexyl]biphenyl. Add 15g of potassium hydrogen sulfate to this and place in a nitrogen stream.
Dehydrate at 160℃ for 2 hours. After cooling, add 500 ml of toluene, separate the potassium hydrogen sulfate, and wash the toluene layer with water until the washing liquid becomes neutral. The toluene is then distilled off under reduced pressure, and the residue is recrystallized from n-heptane to obtain the desired 4-[4''-(trans-4-propylcyclohexyl)cyclohexen-1''-yl]biphenyl. This product has a crystal-smectic (C-Sm) point of 98.2°C, a smectic-nematic (Sm-N) point of 217.4°C, a nematic-transparent (N-I) point of 265.8°C, and a yield of 9.4 g.
The yield was 20%. The identity of this product was confirmed by NMR spectrum, IR absorption spectrum, and elemental analysis. Example 2 (Usage example) Trans-4-propyl-(4'cyanophenyl)
Cyclohexane 28% trans-4-pentyl-(4'-cyanophenyl)
Cyclohexane 43% trans-4-heptyl-(4'-cyanophenyl)
The nematic temperature range of a liquid crystal composition with a composition of 29% cyclohexane is -
The temperature is 3 to 52°C, the dielectric anisotropy value Δε is 10.5, the threshold voltage is 1.53V, and the saturation voltage is 2.12V. To 90 parts of this liquid crystal composition, 4-
[4″-(trans-4-propylcyclohexyl)cyclohexen-1″-yl]biphenyl 10
The nematic temperature range of the liquid crystal mixture added is -5
It spreads to ~+78℃, △ε is +9.2, and the threshold voltage is
Although the saturation voltage increased to 1.62V and 2.35V, the viscosity was 23.1cp. Comparative Example 5 Trans-4-propyl-(4'-cyanophenyl)
Cyclohexane 28% trans-4-pentyl-(4'-cyanophenyl)
Cyclohexane 43% trans-4-heptyl-(4'-cyanophenyl)
The nematic temperature range of a liquid crystal composition with a composition of 29% cyclohexane is -
The temperature was 3 to 52°C, the dielectric anisotropy value Δε was 10.5, the threshold voltage was 1.53V, and the saturation voltage was 2.12V. 90 parts of this liquid crystal composition was added with 4'-
The nematic temperature range of the liquid crystal mixture containing 10 parts of (trans-4″-pentylcyclohexyl)cyclohexen-1′-yl-benzene is -5 to 58°C, △
ε is +9.0, threshold voltage is 1.60V, saturation voltage is
The voltage was 2.30V and the viscosity was 23 cp.

Claims (1)

【特許請求の範囲】 1 一般式 (上式中Rは水素又は炭素数1〜10を有するアル
キル基を示す) で表わされる4′−(トランス−4″−アルキルシク
ロヘキシル)シクロヘキセン−1′−イル−ベンゼ
ン誘導体。 2 一般式 (上式中Rは水素又は素素数1〜10を有するアル
キル基を示す) で表わされる4′−(トランス−4″−アルキルシク
ロヘキシル)シクロヘキセン−1′−イル−ベンゼ
ン誘導体を少くとも一種含有することを特徴とす
る液晶組成物。
[Claims] 1. General formula (In the above formula, R represents hydrogen or an alkyl group having 1 to 10 carbon atoms.) 4'-(trans-4''-alkylcyclohexyl)cyclohexen-1'-yl-benzene derivative. 2 General formula (In the above formula, R represents hydrogen or an alkyl group having a prime number of 1 to 10.) Contains at least one 4'-(trans-4''-alkylcyclohexyl)cyclohexen-1'-yl-benzene derivative represented by A liquid crystal composition characterized by:
JP13887581A 1981-04-02 1981-09-03 4'-(trans-4"-alkylcyclohexyl)cyclohexene-1'-yl-benzene derivative Granted JPS5839629A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13887581A JPS5839629A (en) 1981-09-03 1981-09-03 4'-(trans-4"-alkylcyclohexyl)cyclohexene-1'-yl-benzene derivative
US06/358,794 US4422951A (en) 1981-04-02 1982-03-16 Liquid crystal benzene derivatives
DE8282301631T DE3260570D1 (en) 1981-04-02 1982-03-29 Liquid crystal benzene derivatives
EP82301631A EP0062470B1 (en) 1981-04-02 1982-03-29 Liquid crystal benzene derivatives
HK440/89A HK44089A (en) 1981-04-02 1989-05-25 Liquid crystal benzene derivatives

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13887581A JPS5839629A (en) 1981-09-03 1981-09-03 4'-(trans-4"-alkylcyclohexyl)cyclohexene-1'-yl-benzene derivative

Publications (2)

Publication Number Publication Date
JPS5839629A JPS5839629A (en) 1983-03-08
JPH0150212B2 true JPH0150212B2 (en) 1989-10-27

Family

ID=15232147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13887581A Granted JPS5839629A (en) 1981-04-02 1981-09-03 4'-(trans-4"-alkylcyclohexyl)cyclohexene-1'-yl-benzene derivative

Country Status (1)

Country Link
JP (1) JPS5839629A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109735347A (en) * 2019-01-29 2019-05-10 中节能万润股份有限公司 It is a kind of anti-, trans- 4- phenyl -4 '-amyl -3(E) alkene-dicyclic hexane liquid crystal monomer preparation method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360011A (en) * 1986-08-28 1988-03-16 Sumitomo Metal Ind Ltd Monitoring method for rolling mill

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6360011A (en) * 1986-08-28 1988-03-16 Sumitomo Metal Ind Ltd Monitoring method for rolling mill

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109735347A (en) * 2019-01-29 2019-05-10 中节能万润股份有限公司 It is a kind of anti-, trans- 4- phenyl -4 '-amyl -3(E) alkene-dicyclic hexane liquid crystal monomer preparation method

Also Published As

Publication number Publication date
JPS5839629A (en) 1983-03-08

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