JPH01500052A - Device for detecting the condition of a material, especially the adsorption of gases or liquids on that material - Google Patents

Device for detecting the condition of a material, especially the adsorption of gases or liquids on that material

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Publication number
JPH01500052A
JPH01500052A JP50512386A JP50512386A JPH01500052A JP H01500052 A JPH01500052 A JP H01500052A JP 50512386 A JP50512386 A JP 50512386A JP 50512386 A JP50512386 A JP 50512386A JP H01500052 A JPH01500052 A JP H01500052A
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Prior art keywords
electrode assembly
detection device
assembly
piezoelectric
mirror
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Japanese (ja)
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ヴェネーマ,アドリアヌス
Original Assignee
ネデルランツェ オルガニサティ ヴォール テッゲパスト―ナテゥールヴェーテンシャペリック オンデルズク ティーエヌオー
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Publication of JPH01500052A publication Critical patent/JPH01500052A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02Analysing fluids
    • G01N29/022Fluid sensors based on microsensors, e.g. quartz crystal-microbalance [QCM], surface acoustic wave [SAW] devices, tuning forks, cantilevers, flexural plate wave [FPW] devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00Indexing codes associated with group G01N29/00
    • G01N2291/02Indexing codes associated with the analysed material
    • G01N2291/025Change of phase or condition
    • G01N2291/0256Adsorption, desorption, surface mass change, e.g. on biosensors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2291/00Indexing codes associated with group G01N29/00
    • G01N2291/04Wave modes and trajectories
    • G01N2291/042Wave modes
    • G01N2291/0423Surface waves, e.g. Rayleigh waves, Love waves

Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 材料の状態特にその材料のガス 又は液体の吸着を検出する装置 圧電気材料において弾性表面波(いわゆるレイリー波)が約2〜3μmの深さで 発生し得ることが知られている。そのような材料では伝播速度が約103m7’ sで、波長がマグニチュード1μmオーダーにできるので、マグニチュードI  GHzオーダーの振動が電気回路から対応する機械振動へ転換し得る。伝播速度 が遅い場合には小型の遅延回路を構成でき、このようにして電気機械フィルター が得られる。[Detailed description of the invention] The condition of the material, especially the gas in that material Or a device that detects adsorption of liquid. In piezoelectric materials, surface acoustic waves (so-called Rayleigh waves) occur at a depth of approximately 2 to 3 μm. It is known that this can occur. In such materials the propagation velocity is approximately 103 m7' s, the wavelength can be made to the magnitude of 1 μm order, so the magnitude is I. Vibrations on the order of GHz can be transferred from electrical circuits to corresponding mechanical vibrations. propagation speed is slow, a small delay circuit can be constructed, and in this way an electromechanical filter is obtained.

上記の波を励起し再び電気振動を呼び起すのにいわゆる組合せ式変換器が利用で きる。この変換器は圧電気ウェハーの表面上の二つの櫛歯状の金属箔からなる電 極からなり、その電極の歯は、歯のピッチの4分の1に等しい幅を有して挿入さ れている。弾性波は歯に直交する方向に発生され、その波長は歯のピッチに等し い。その振幅と共振の尖鋭度は歯数により増大する。So-called combinational transducers can be used to excite the above waves and bring them back into electric vibrations. Wear. This transducer consists of two comb-shaped metal foils on the surface of a piezoelectric wafer. consisting of a pole, the teeth of which are inserted with a width equal to one quarter of the pitch of the teeth. It is. The elastic wave is generated in the direction perpendicular to the tooth, and its wavelength is equal to the pitch of the tooth. stomach. Its amplitude and resonance sharpness increase with the number of teeth.

この点の詳細は、刊行物A、Venema in ’rt jdachrif  tNERG 405(1975) 135に記載されている。Further details on this point can be found in Publication A, Venema in’rt jdachrif tNERG 405 (1975) 135.

米国特許第4.312,228号では、2つの合成電極を有する圧電気ウェハー からなる装置が記載され。No. 4,312,228 discloses a piezoelectric wafer with two composite electrodes. A device consisting of is described.

その電極の間の部分がガス又は液体を吸着する層で覆われている。この層は圧電 気材料の振動の仕方に影響を与え、その結果として弾性波の伝播速度にも影響を 与える。この層の特性が例えば他の物質の吸着によって変化すると電極組立体間 の伝達時間に影響する。電極組立体は例えば層条件及び従って弾性波の伝達時間 の変化があるので多かれ少なかれ調整が外れるであろう発振回路に含ませること ができる。The area between the electrodes is covered with a layer that adsorbs gas or liquid. This layer is piezoelectric It affects the way air materials vibrate, and as a result, it also affects the propagation speed of elastic waves. give. If the properties of this layer change, for example due to the adsorption of other substances, the electrode assembly may transmission time. The electrode assembly depends on e.g. the layer conditions and therefore the propagation time of the acoustic waves. be included in an oscillator circuit that will be more or less out of adjustment due to changes in Can be done.

吸着物質の特性に関する情報はそこから誘導される。Information regarding the properties of the adsorbent is derived therefrom.

このような装置は他の表面層の変化やあるいは異なった種類の表面層を相互に比 較することにも使える。Such devices can detect changes in other surface layers or compare different types of surface layers with each other. It can also be used to compare.

この公知の装置には表面層の非常に微少な変化を検知できないという欠陥がある 。つまり弾性波の伝達時間の僅かな変動は発振器の実質的な脱調をもたらさない からである。このように波の伝達時間の測定が可能ではあるが、そのためには、 多くの場合。This known device has the drawback of not being able to detect very small changes in the surface layer. . In other words, slight variations in the travel time of elastic waves do not result in substantial detuning of the oscillator. It is from. Although it is possible to measure the propagation time of waves in this way, in order to do so, In many cases.

装置を実用目的上不適とする複雑で高価な装置となってしまう。This results in a complex and expensive device that makes the device unsuitable for practical purposes.

本発明の目的は、公知の装置よりも実質的に高感度の装置を提供することである 。It is an object of the invention to provide a device that is substantially more sensitive than known devices. .

本発明による装置は材料の条件特にこの材料の上のガス又は液体の吸着を決定す るために、少なくともその近くに圧電気特性を有する平らな面からなる基材と、 その面上に設けられ、薄い金属層で、互いに噛み合った(社)歯形をなす層から なる電極組立体からなり、その組立体が前記圧電気材に櫛歯と直交する方向に弾 性波を発生させるために適当な周波数を有する交流電圧が印加されるようになっ ており、さらに前記層fの組立体の横に配されている。その条件が決定されるべ き材料からなる少なくとも1つの表面層とからなり、その特徴は、櫛形電極組立 体の両側に、その組立体で生起される弾性波用のミラーが配され、そのミラーが 、前記電極の歯と平行に展がる実質的に直線状の面形状で形成されてなりかつ前 記ミラー間に反射される波が仮に前記表面層が所与の関連条件にあると前記電極 組立体で位相が一致するように電極組立体から一定の距離を置いて配されており 、前記層が少なくとも電極組立体と前記ミラーの1つとの間に設けられているこ とにある。The device according to the invention determines the material conditions, in particular the adsorption of gases or liquids on this material. a substrate consisting of a flat surface having piezoelectric properties at least in the vicinity thereof; A thin metal layer is formed on the surface, forming a tooth-shaped layer that interlocks with each other. The assembly consists of an electrode assembly that is elastically applied to the piezoelectric material in a direction perpendicular to the comb teeth. An alternating current voltage with an appropriate frequency is now applied to generate sexual waves. and is further arranged next to the assembly of said layer f. The conditions must be determined. and at least one surface layer of a comb-shaped electrode assembly. Mirrors for the elastic waves generated by the assembly are placed on both sides of the body, and the mirrors , formed of a substantially linear surface shape extending parallel to the teeth of the electrode, and If the surface layer is in a given relevant condition, the waves reflected between the mirrors will be reflected between the electrodes. It is placed at a certain distance from the electrode assembly to ensure phase matching in the assembly. , the layer is provided between at least the electrode assembly and one of the mirrors; There it is.

この構造は光学分野で知られる干渉計と比較することができ、電極組立体とミラ ーとの間の僅かな伝達時間差に極度に敏感である。伝達時間の差で異った波は位 相が一致しなくなり、電気回路によってインピーダンスの変化として感知され電 気振動を起すこの装置ではエネルギーストックが変化するのでそのような変化は 容易に検知される。This structure can be compared to an interferometer known in the optical field, and consists of an electrode assembly and a mirror. is extremely sensitive to slight differences in transmission time between The waves differ in position due to the difference in propagation time. The phases are no longer matched, which is sensed by the electrical circuit as a change in impedance and generates a current. In this device that generates air vibrations, the energy stock changes, so such changes easily detected.

更に第2の同じような電極組立体を、第1の組立体から関連条件下で異なった波 がそこでも位相が一致するような距離を保って設けることも出来、この第2の組 立体は電気計測回路に接続される。この場合、その関連が、振動の位相が一致す る距離とポイントであれば、振動の中心点と考え得る電極組立体のポイントとな る。Furthermore, a second similar electrode assembly is exposed to different waves under relevant conditions from the first assembly. It is also possible to maintain a distance such that the phases match even there, and this second set The solid is connected to an electrical measurement circuit. In this case, the relationship is that the vibrations are in phase. If the distance and point are the same, then the point of the electrode assembly can be considered as the center of vibration. Ru.

前記ミラーは特に1表面層の関連条件における弾性波の4分の1波長の整数倍の 相互距離を有する複数の平行線からなり、その整数は実質的に完全な反射が得ら れるように選択されている。Said mirror has an integer multiple of a quarter wavelength of an elastic wave in particular in the relevant conditions of one surface layer. Consists of a number of parallel lines with mutual distances, an integral number of which results in virtually perfect reflection. selected to be used.

前記ミラーの線は圧電気材料の表面に設けた金属層又は前記表面に刻んだ浅い溝 で形成できる。The mirror line may be a metal layer provided on the surface of the piezoelectric material or a shallow groove cut into the surface. It can be formed by

特に圧電気材の表面は、関連回路が集積される半導体基材による被覆層の形にす ることができる。In particular, the surface of the piezoelectric material is formed in the form of a covering layer of a semiconductor substrate on which related circuits are integrated. can be done.

本発明を図面を参照して更に詳細に説明する。The present invention will be explained in more detail with reference to the drawings.

第1図は本発明の装置の基本形の輪隔図。FIG. 1 is an annular diagram of the basic form of the device of the present invention.

第2図は第1図の1部の拡大図。Figure 2 is an enlarged view of a portion of Figure 1.

第3図は他の実施例の対応図である。FIG. 3 is a corresponding diagram of another embodiment.

本発明の装置は圧電気材料のウェハー1あるいは少なくとも適当な基材上に設け た圧電気被覆層からなり、被覆層1の場合には、数μmの浸透深さを有する所謂 レイリー波を形成するのに充分な厚みを有している。The device of the invention is mounted on a wafer 1 of piezoelectric material or at least on a suitable substrate. In the case of coating layer 1, the so-called piezoelectric coating layer has a penetration depth of several μm. It has sufficient thickness to form Rayleigh waves.

ウェハー1の上には所謂組合せ電極組立体2が設けである。その組立体の1部は 第2図で広大して示しである。前記組立体の下のウェハ一部分は圧電気材である 必要はなく、もし圧電気材でない場合には組立体2のと、ころに圧電気材被覆層 を設ければよい。A so-called combination electrode assembly 2 is provided on the wafer 1 . Part of the assembly is It is shown enlarged in Figure 2. A portion of the wafer below the assembly is piezoelectric. It is not necessary, and if the piezoelectric material is not used, a piezoelectric material coating layer is applied to the assembly 2 and the rollers. All you have to do is set it up.

第2図で示すように1組立体2はそれぞれが複数の歯5を有する2つの電極3か ら成る。その歯50幅は、異なった電極3と4の2つの歯5の空間の曙に等しい 。若し適当な交流電圧がこの電極に印加されると、ウェハー1の表面に歯5と直 交する伝播方向を有する弾性波が生起される。励起周波数は、圧電気柱内の伝播 速度から歯幅又は歯のピッチの4倍となり、この点において文献例えばA、Ve nema 1nTijdachrift NERG 40.5(1975) 1 35 を参照できる。As shown in FIG. 2, an assembly 2 consists of two electrodes 3 each having a plurality of teeth 5. It consists of The width of the teeth 50 is equal to the width of the space between the two teeth 5 of different electrodes 3 and 4. . If a suitable alternating current voltage is applied to this electrode, the teeth 5 will appear directly on the surface of the wafer 1. Elastic waves with intersecting propagation directions are generated. The excitation frequency is propagated within the piezoelectric column. The speed is four times the tooth width or tooth pitch, and in this respect the literature such as A, Ve nema 1nTijdachrift NERG 40.5 (1975) 1 35 can be referred to.

このような組立体で得られる波長は組立体製造の精度に依存する。半導体集積回 路用に開発されたエツチング技術により極めて精密な電極組立体の製造が可能に なり、1μm単位の波長即ち数GHzの周波数(圧電気材中の伝播速度が3.1 0’m/s )が可能となる。The wavelengths obtainable with such an assembly depend on the precision of assembly manufacture. semiconductor integrated circuit Etching technology developed for road use enables manufacturing of extremely precise electrode assemblies Therefore, the wavelength of 1 μm unit, that is, the frequency of several GHz (the propagation speed in the piezoelectric material is 3.1 0'm/s) is possible.

このことは、ウェハー1上で比較的に非常に小さい通路長に弾性波の非常に沢山 の波長を含むことを意味する。This results in a very large number of elastic waves on the wafer 1 with a relatively very small path length. This means that it includes wavelengths of

組立体2の両側のウェハー1の上に複数の線7が設けられるが、その線は蒸着金 属層又は表面に刻設した細い溝から成る。組立体2に直近の線と組立体2の中心 点との距離は半波長の整数倍に等しく、セットになった谷線の間隔は4分の1波 長の整数倍に等しい。この線は弾性波に対しミラーとして作用する。単線7では 完全な反射を発生せず、4分の1波長の整数倍で平行に複数設けることでより良 好な反射を行う。実際には、何10本かの線が実質的に完全々反射を行う。電極 組立体2から発生する弾性波はミラー線7で反射し1組立体2の中心から放出さ れる波と位相が一致する。そしてこれが干渉計として作用し、調整条件において はエネルギーのマキシマムストレージが生じる。しかし1反射波が組立体2の中 心で位相が一致するように屈かないと、このエネルギーが急速に減衰して、これ が電極組立体2をなす電気回路内で対応する容易に検出されるインピーダンス変 動として感知される。組立体2は第2図に繊組立体の中間にあるものとして示し である。A plurality of lines 7 are provided on the wafer 1 on either side of the assembly 2, which lines are made of evaporated gold. It consists of thin grooves carved into the layer or surface. Line closest to assembly 2 and center of assembly 2 The distance to the point is equal to an integer multiple of a half wavelength, and the interval between the set valley lines is 1/4 wave. Equal to an integer multiple of length. This line acts as a mirror for the elastic waves. On single line 7 It is better to avoid complete reflection and to install multiple units in parallel at integral multiples of a quarter wavelength. Perform good reflexes. In practice, some 10 lines are substantially completely reflective. electrode The elastic waves generated from the assembly 2 are reflected by the mirror wire 7 and emitted from the center of the assembly 2. The phase matches that of the wave that is generated. This then acts as an interferometer, and under the adjustment conditions results in maximum storage of energy. However, 1 reflected wave is inside assembly 2. If you don't bend your mind to match the phase, this energy will quickly decay and this corresponds to an easily detected impedance change in the electrical circuit forming the electrode assembly 2. It is perceived as motion. Assembly 2 is shown in FIG. 2 as being in the middle of the textile assembly. It is.

これはしかし、編組立体7間の距離がギ波長の全数を合せたものである限りは必 要ではないことは云う迄もない。This is, however, necessary as long as the distance between the knitting assemblies 7 is equal to the total number of wavelengths. Needless to say, it is not important.

ウェハー1の表面上の少なくとも線7と電極組立体2との間には、圧電気材の弾 性の態様に影響を与えるよう゛に表面層8が設けられている。前記の干渉計調整 はこの表面層に設けた圧電気材に発生する波長に適合するように行われる。A piezoelectric material is provided between at least the wire 7 on the surface of the wafer 1 and the electrode assembly 2. A surface layer 8 is provided to influence the behavior. Interferometer adjustment as described above is performed to match the wavelength generated in the piezoelectric material provided on this surface layer.

表面層8の条件が変ると、圧電気材の振動態様も変化され、振動条件への障害へ とつながる。そのような変動は例えば層が他の物質を吸着しその質量が増大した ときに生じる。層8に吸着され、極く微量であっても実質的に振動の平衡状態を 乱すに充分なガス、又は液体を検出することができるようになっている。When the conditions of the surface layer 8 change, the vibration mode of the piezoelectric material also changes, causing disturbances to the vibration conditions. Connect with. Such fluctuations can occur, for example, when a layer adsorbs other substances and its mass increases. Occasionally occurs. It is adsorbed to layer 8, and even if it is only a very small amount, it will substantially maintain the vibrational equilibrium state. Enough gas or liquid can be detected to cause disturbance.

電極組立体2の1側方にのみ層8を設けることはできるカ2.第1図に示すよう に対称形に配するのがよい、その理由は感度が向上するからである。2. It is possible to provide the layer 8 on only one side of the electrode assembly 2. As shown in Figure 1 It is preferable to arrange them symmetrically to each other, as this improves sensitivity.

第3図は他の実施例を示し、第2の電極組立体2′が設けられ第1の組立体2と 同じ位相の一致が行われる。組立体2′は電気計測回路と接続され9組立体2は 唯弾性振勤め励起にのみ機能する。FIG. 3 shows another embodiment in which a second electrode assembly 2' is provided and the first assembly 2 is connected to the second electrode assembly 2'. Same phase matching is done. Assembly 2' is connected to the electrical measuring circuit; 9 assembly 2 is It functions only for elastic vibrational excitation.

このように、極微の濃度を有するガス及び/又は液体に感応する検知器を得るこ とが容易となる。表面層8の態様に影響する他の現象も検知できることは云う迄 もない。In this way, it is possible to obtain a detector that is sensitive to gases and/or liquids with minute concentrations. This makes it easier. It goes without saying that other phenomena affecting the aspect of the surface layer 8 can also be detected. Nor.

場合によっては半導体基材上に設けた圧電気層lを使用するのもよい、その基材 に電気振動を生起させるのに用いられる及び発生するずれを測定するための集積 回路を形成するのである。In some cases, it is also possible to use a piezoelectric layer provided on a semiconductor substrate; an integrated circuit used to generate electrical vibrations and to measure the deviations that occur. It forms a circuit.

lシフ邑−2゜ 国際調査報告 ’ ANNEX To ThE r’MTZRNATIONN−5EJR国RE FORT 0NUS−A−412146724/10/78 Nonel Sifu-eup-2゜ international search report ’ ANNEX To ThE r’MTZRNATIONNN-5EJR 国RE FORT 0NUS-A-412146724/10/78 None

Claims (1)

【特許請求の範囲】 1)材料の状態特にその材料へのガス又は液体の吸着を検出する装置であって, 少なくともその近傍に圧電気特性を有する平らな面を備えた基材と,前記面上に 設けられ,相互に歯を噛み合せた2つの櫛形の薄い金属層からなる前記圧電気の 基材に,櫛歯と直交する方向に弾性波を発生させるために適当な周波数を有する 交流電圧が印加されるようになってる電極組立体と,さらに前記面上の前記組立 体の横に配されその条件が決定されるべき材料からなる少なくとも1つの表面層 とからなるとともに,櫛形電極組立体の両側に,その組立体で生起される弾性波 用のミラーが配され,そのミラーが,前記電極の歯と平行に展がる実質的には直 線状をなす面形状に形成されてなり,前記ミラー間に反射される波が,前記表面 層が所与の関連条件にあるとき前記電極組立体で位相が一致するように電極組立 体から一定の距離で配され,かつ前記表面層が少なくとも電極組立体と前記ミラ ーの1つとの間に設けられていることを特徴とする検出装置。 2)第2の同様の電極組立体が第1の電極組立体から,関連条件において異なつ た波がそこでも位相一致するような距離で設けられ更に電気計測回路に接続され ていることを特徴とする特許請求の範囲第1項記載の検出装置。 3)前記ミラーが特に前記表面層の関連条件において,弾性波の4分の1波長の 1整数倍の相互距離を有する複数の平行線からたり,その数が実質的に完全な反 射が得られるように選定されることを特徴とする特許請求の範囲第1項又は第2 項記載の検出装置。 4)前記ミラー線が圧電気材表面に設けた金属層からなることを特徴とする特許 請求の範囲第1項から第3項のいずれか1つに記載の検出装置。 5)前記ミラー線が圧電気材表面に刻設した浅い溝からなることを特徴とする特 許請求の範囲第1項から第3項のいずれか1つに記載の検出装置。 6)前記圧電気材の表面が関連回路を集積した半導体基材上に被覆層として形成 されていることを特徴とする特許請求の範囲第1項から第5項のいずれか1つに 記載の検出装置。[Claims] 1) A device for detecting the condition of a material, especially the adsorption of gas or liquid to the material, a base material having a flat surface having piezoelectric properties at least in the vicinity thereof; The piezoelectric device consists of two comb-shaped thin metal layers with interlocking teeth. The base material has an appropriate frequency to generate elastic waves in a direction perpendicular to the comb teeth. an electrode assembly to which an alternating voltage is applied; and further said assembly on said surface. at least one surface layer of material placed next to the body and whose conditions are to be determined and an elastic wave generated by the comb-shaped electrode assembly on both sides of the comb-shaped electrode assembly. a substantially straight mirror extending parallel to the teeth of the electrode; The wave reflected between the mirrors is formed into a linear surface shape, and the waves reflected between the mirrors are Electrode assembly such that the layers are in phase with said electrode assembly when in a given relative condition. the surface layer is disposed at a certain distance from the body, and the surface layer includes at least the electrode assembly and the mirror. A detection device characterized in that it is provided between one of the following. 2) a second similar electrode assembly differs from the first electrode assembly in relevant conditions; The waves are placed at such a distance that their phases match there as well, and are further connected to an electrical measurement circuit. A detection device according to claim 1, characterized in that: 3) If the mirror has a wavelength of a quarter wavelength of an elastic wave, especially in the relevant conditions of the surface layer, from two or more parallel lines having mutual distances that are an integral multiple of one Claim 1 or 2 is selected such that the Detection device described in section. 4) A patent characterized in that the mirror wire is composed of a metal layer provided on the surface of a piezoelectric material. A detection device according to any one of claims 1 to 3. 5) A special feature characterized in that the mirror wire consists of shallow grooves carved on the surface of the piezoelectric material. A detection device according to any one of claims 1 to 3. 6) The surface of the piezoelectric material is formed as a coating layer on a semiconductor substrate in which related circuits are integrated. Any one of claims 1 to 5, characterized in that Detection device as described.
JP50512386A 1985-09-26 1986-09-26 Device for detecting the condition of a material, especially the adsorption of gases or liquids on that material Pending JPH01500052A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8502634 1985-09-26
NL8502634A NL8502634A (en) 1985-09-26 1985-09-26 APPARATUS FOR DETERMINING THE CONDITION OF A MATERIAL, IN PARTICULAR THE ADSORPTION OF A GAS OR LIQUID ON THIS MATERIAL.

Publications (1)

Publication Number Publication Date
JPH01500052A true JPH01500052A (en) 1989-01-12

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JP50512386A Pending JPH01500052A (en) 1985-09-26 1986-09-26 Device for detecting the condition of a material, especially the adsorption of gases or liquids on that material

Country Status (4)

Country Link
EP (1) EP0239608A1 (en)
JP (1) JPH01500052A (en)
NL (1) NL8502634A (en)
WO (1) WO1987002134A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005331326A (en) * 2004-05-19 2005-12-02 Japan Radio Co Ltd Elastic wave sensor
JPWO2004086028A1 (en) * 2003-03-26 2006-06-29 一司 山中 Sensor head, gas sensor and sensor unit

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4905701A (en) * 1988-06-15 1990-03-06 National Research Development Corporation Apparatus and method for detecting small changes in attached mass of piezoelectric devices used as sensors
GB8922601D0 (en) * 1989-10-06 1989-11-22 Rolls Royce Plc Thermal piezoelectric microbalance and method of using the same
GB2244557A (en) * 1990-06-01 1991-12-04 Marconi Gec Ltd Acoustic wave biosensor
DE19850803A1 (en) 1998-11-04 2000-05-11 Bosch Gmbh Robert Sensor arrangement and a method for determining the density and viscosity of a liquid
DE19850801A1 (en) * 1998-11-04 2000-05-11 Bosch Gmbh Robert Method and device for operating a microacoustic sensor arrangement

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121467A (en) * 1977-05-31 1978-10-24 The United States Of America As Represented By The Secretary Of The Army Non-destructive technique for surface wave velocity measurement
US4312228A (en) * 1979-07-30 1982-01-26 Henry Wohltjen Methods of detection with surface acoustic wave and apparati therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2004086028A1 (en) * 2003-03-26 2006-06-29 一司 山中 Sensor head, gas sensor and sensor unit
JP2005331326A (en) * 2004-05-19 2005-12-02 Japan Radio Co Ltd Elastic wave sensor

Also Published As

Publication number Publication date
EP0239608A1 (en) 1987-10-07
NL8502634A (en) 1987-04-16
WO1987002134A1 (en) 1987-04-09

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