JPH0142916B2 - - Google Patents

Info

Publication number
JPH0142916B2
JPH0142916B2 JP58139258A JP13925883A JPH0142916B2 JP H0142916 B2 JPH0142916 B2 JP H0142916B2 JP 58139258 A JP58139258 A JP 58139258A JP 13925883 A JP13925883 A JP 13925883A JP H0142916 B2 JPH0142916 B2 JP H0142916B2
Authority
JP
Japan
Prior art keywords
crucible
magnetic field
single crystal
pulling
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58139258A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6033297A (ja
Inventor
Hidekazu Taji
Mitsuhiro Yamato
Masaharu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP58139258A priority Critical patent/JPS6033297A/ja
Publication of JPS6033297A publication Critical patent/JPS6033297A/ja
Publication of JPH0142916B2 publication Critical patent/JPH0142916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58139258A 1983-07-29 1983-07-29 単結晶半導体引上装置 Granted JPS6033297A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58139258A JPS6033297A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58139258A JPS6033297A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Publications (2)

Publication Number Publication Date
JPS6033297A JPS6033297A (ja) 1985-02-20
JPH0142916B2 true JPH0142916B2 (enExample) 1989-09-18

Family

ID=15241101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58139258A Granted JPS6033297A (ja) 1983-07-29 1983-07-29 単結晶半導体引上装置

Country Status (1)

Country Link
JP (1) JPS6033297A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036391A (ja) * 1983-08-05 1985-02-25 Toshiba Corp 単結晶引上装置
JPS60221392A (ja) * 1984-04-16 1985-11-06 Toshiba Corp 単結晶生成方法
KR0149287B1 (ko) * 1995-04-17 1998-10-15 심상철 실리콘 단결정 제조장치 및 그를 이용한 실리콘 단결정의 제조방법

Also Published As

Publication number Publication date
JPS6033297A (ja) 1985-02-20

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