JPH0142512B2 - - Google Patents
Info
- Publication number
- JPH0142512B2 JPH0142512B2 JP57207284A JP20728482A JPH0142512B2 JP H0142512 B2 JPH0142512 B2 JP H0142512B2 JP 57207284 A JP57207284 A JP 57207284A JP 20728482 A JP20728482 A JP 20728482A JP H0142512 B2 JPH0142512 B2 JP H0142512B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic flux
- superconducting
- quantum
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 31
- 230000004907 flux Effects 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 5
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000005404 monopole Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
Description
【発明の詳細な説明】
本発明は、超伝導薄膜の残留量子磁束を除去す
る方法とこの方法を実施するための装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for removing residual quantum flux in superconducting thin films and an apparatus for implementing this method.
超伝導薄膜は、超低磁場を必要とする物性実
験、磁場測定器のドリフトのない較正などに広く
使用されている。 Superconducting thin films are widely used in physical property experiments that require ultra-low magnetic fields and in drift-free calibration of magnetic field measuring instruments.
従来、超伝導薄膜にトラツプされている残留量
子磁束を除去する方法として、ヒートフラツシユ
（Heat Flush）法がある。超伝導薄膜を一方の端
部から徐々に液体ヘリウム内に浸漬してゆくと、
薄膜にトラツプされている量子磁束は冷却されて
いる部分から冷却されていない部分（常伝導の部
分）に向つて移動し、薄膜の端部から残留量子磁
束を排出する。 Conventionally, there is a heat flush method as a method for removing residual quantum magnetic flux trapped in superconducting thin films. When a superconducting thin film is gradually immersed in liquid helium from one end,
The quantum magnetic flux trapped in the thin film moves from the cooled part to the uncooled part (normally conductive part), expelling the residual quantum magnetic flux from the edge of the thin film.
このヒートフラツシユ法は、現在のところ超伝
導薄膜から残留量子磁束を除去する優れた方法と
して知られているが、残留量子磁束を完全に除去
することはできない。 Although this heat flash method is currently known as an excellent method for removing residual quantum magnetic flux from superconducting thin films, it cannot completely remove residual quantum magnetic flux.
本発明者は超伝導薄膜の微小領域をレーザー光
で加熱し、この加熱領域を薄膜の端部に向つて移
動させることにより残留量子磁束を除去できるこ
とを見出した。このレーザー光加熱により従来の
ヒートフラツシユ法に比べて熱勾配が格段（約30
倍）に大きくなり、そのため残留量子磁束を効果
的に除去できるものと考えられる。 The present inventor has discovered that residual quantum magnetic flux can be removed by heating a minute region of a superconducting thin film with laser light and moving this heated region toward the edge of the thin film. This laser light heating creates a much greater thermal gradient (approximately 30
It is considered that the residual quantum magnetic flux can be effectively removed.
本発明はこの知見に基づくものであつて、冷却
している超伝導薄膜の微小領域（膜厚の二乗程度
の面積）を加熱して常伝導化し、この加熱領域を
薄膜の端に向つて移動することにより、その常伝
導化領域に含まれる量子磁束を薄膜外に排出させ
る。 The present invention is based on this knowledge, and involves heating a micro region (an area approximately the square of the film thickness) of a cooling superconducting thin film to make it normal conductive, and moving this heated region toward the edge of the thin film. By doing so, the quantum magnetic flux contained in the normal conduction region is discharged to the outside of the thin film.
添付図面により本発明を説明する。 The invention will be explained with reference to the accompanying drawings.
第１図は本発明の方法を実施するための装置の
一例を示す。１は超伝導薄膜であつて、内径50
mm、長さ150mmのステンレス製円筒内壁に厚さ
50μｍの鉛の薄層をメツキ又はスパツタリングに
より形成している。２は冷却手段であつて、液体
ヘリウムを充填するデユアージヤーである。３は
駆動手段（図示せず）により上下方向にも回転方
向にも動ける走査装置である（スキヤンスピード
10mm／sec、位置決定精度±50μｍ）。４はオプチ
カルフアイバーであつて、走査装置の先端の一方
の端に取付けられ、アルゴンイオンレーザー源
（図示せず）からのレーザー光を導入する。５は
量子磁束検知手段であつて、走査装置の先端の他
方の端に取付けた超伝導量子干渉素子（SQUID）
５′に接続されている。 FIG. 1 shows an example of an apparatus for carrying out the method of the invention. 1 is a superconducting thin film with an inner diameter of 50
mm, length 150mm stainless steel cylinder inner wall thickness
A thin layer of 50 μm lead is formed by plating or sputtering. Reference numeral 2 is a cooling means, which is a dual jar filled with liquid helium. 3 is a scanning device that can be moved both vertically and rotationally by a driving means (not shown) (scan speed
10mm/sec, positioning accuracy ±50μm). An optical fiber 4 is attached to one end of the tip of the scanning device and introduces laser light from an argon ion laser source (not shown). 5 is a quantum magnetic flux detection means, which is a superconducting quantum interference device (SQUID) attached to the other end of the tip of the scanning device.
5'.
この第１図の装置を用いて次の操作手順により
超伝導薄膜１から残留量子磁束を除去する。 Using the apparatus shown in FIG. 1, residual quantum magnetic flux is removed from the superconducting thin film 1 by the following operating procedure.
円筒容器を液体ヘリウムで冷却する。この場
合、ヒートフラツシユ法を用いて冷却すること
により、残留量子磁束をできるだけ減らしてお
くのがよい。 Cool the cylindrical container with liquid helium. In this case, it is preferable to reduce residual quantum magnetic flux as much as possible by cooling using a heat flash method.
この冷却している円筒容器にトラツプされて
いる残留量子磁束の位置及び量子数を、超伝導
量子干渉素子５′により検出し、小型計算機
（図示せず）に記憶する。 The position and quantum number of the residual quantum magnetic flux trapped in the cooled cylindrical container are detected by the superconducting quantum interference element 5' and stored in a small computer (not shown).
つぎに、残留量子磁束の存在する領域をレー
ザー光（直径約50μｍのスポツト）で加熱して
常伝導化し、この加熱領域（スポツト）を走査
装置３を用いて容器の開放端まで誘導する。 Next, the region where the residual quantum magnetic flux exists is heated with laser light (a spot with a diameter of about 50 μm) to make it normal conductive, and this heated region (spot) is guided to the open end of the container using the scanning device 3.
超伝導量子干渉素子５′を用いて残留量子磁
束の分布を調べ、当初の分布と比較し、必要に
応じて、の操作を繰り返し、残留量子磁束
を排除する。 The distribution of the residual quantum magnetic flux is investigated using the superconducting quantum interference element 5', compared with the initial distribution, and if necessary, the operation is repeated to eliminate the residual quantum magnetic flux.
上記の如く、本発明は冷却している超伝導磁気
遮蔽体の微小領域をレーザー光で加熱して常伝導
スポツトを形成するので、熱勾配が格段に大きく
とれ、残留量子磁束を確実にその加熱領域（常伝
導スポツト）にとられることができ、そしてこれ
を薄膜の端部に向つて連れ出すことにより、残留
量子磁束を薄膜から確実に排除できる。 As described above, the present invention uses a laser beam to heat a micro region of a superconducting magnetic shield that is being cooled to form a normal conduction spot, so the thermal gradient can be made significantly larger, and the residual quantum magnetic flux can be reliably heated. region (normal conduction spot), and by bringing it out towards the edge of the thin film, the residual quantum flux can be reliably expelled from the thin film.
本発明によつて残留量子磁束を完全に排除され
た超伝導薄膜が、新たな量子磁束を発生する場合
には、磁気モノポールの通過以外にあり得ないの
で、そのような薄膜と組合せれば第１図の装置は
モノポール検出器としても有用である。 If a superconducting thin film from which residual quantum magnetic flux has been completely eliminated according to the present invention can generate new quantum magnetic flux, it can only occur through the passage of a magnetic monopole, so if it is combined with such a thin film, The device of FIG. 1 is also useful as a monopole detector.
なお、本発明に用いる超伝導薄膜の形状は応用
目的に応じて適宜選択すればよく、例えばモノポ
ール検出器として使用する場合には板状でもよ
い。また、薄膜は鉛以外に、例えば錫、インジウ
ム、半田、ニオブなど超伝導材料から適宜選択で
きる。又、薄膜とせずに超伝導材料自体をレーザ
ー加熱走査に適した形にして使用してもよい。 Note that the shape of the superconducting thin film used in the present invention may be appropriately selected depending on the application purpose; for example, when used as a monopole detector, it may be plate-shaped. Further, the thin film can be appropriately selected from superconducting materials other than lead, such as tin, indium, solder, and niobium. Alternatively, the superconducting material itself may be used in a form suitable for laser heating scanning without forming it into a thin film.
第１図は本発明方法を実施するための装置の一
例を示す。
（図中の符号）、１……超伝導薄膜（円筒容器
の内壁に形成）、２……冷却手段（デユア・ジヤ
ー）、３……走査装置、４……オプチカルフアイ
バー、５……量子磁束検知手段。
FIG. 1 shows an example of an apparatus for carrying out the method of the invention. (Symbols in the figure), 1... Superconducting thin film (formed on the inner wall of the cylindrical container), 2... Cooling means (dua-jaa), 3... Scanning device, 4... Optical fiber, 5... Quantum magnetic flux Detection means.
Claims (1)
て常伝導化し、この加熱領域を前記の薄膜の端に
向つて移動することにより、加熱領域に含まれて
いる量子磁束を薄膜から排出することを特徴とす
る超伝導磁気薄膜の残留量子磁束の除去方法。 ２ 超伝導薄膜を冷却する手段、薄膜の微小領域
を加熱する手段、量子磁束を検知する手段及び前
記の加熱手段と前記の量子磁束検知手段とを薄膜
表面に沿つて動かす手段を備えたことを特徴とす
る超伝導薄膜の残留量子磁束の除去装置。 ３ 前記の超伝導薄膜が一端で開放している円筒
容器の内壁に形成されている特許請求の範囲第２
項に記載の装置。 ４ レーザー光により加熱する特許請求の範囲第
１項に記載の方法。 ５ 前記の量子磁束検知手段が超伝導量子干渉素
子を含む特許請求の範囲第２項に記載の装置。[Claims] 1. By heating a minute region of a superconducting thin film that is being cooled to make it normal conductive, and moving this heated region toward the edge of the thin film, the quanta contained in the heated region are A method for removing residual quantum magnetic flux from a superconducting magnetic thin film, characterized by ejecting magnetic flux from the thin film. 2. A means for cooling the superconducting thin film, a means for heating a minute region of the thin film, a means for detecting quantum magnetic flux, and a means for moving the heating means and the quantum magnetic flux detecting means along the surface of the thin film. Features: A device for removing residual quantum magnetic flux from superconducting thin films. 3. Claim 2, wherein the superconducting thin film is formed on the inner wall of a cylindrical container that is open at one end.
The equipment described in section. 4. The method according to claim 1, which involves heating with laser light. 5. The device according to claim 2, wherein the quantum magnetic flux sensing means includes a superconducting quantum interference device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207284A JPS5996785A (en) | 1982-11-25 | 1982-11-25 | Method for removing residual quantum magnetic flux of superconductive thin film and device therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57207284A JPS5996785A (en) | 1982-11-25 | 1982-11-25 | Method for removing residual quantum magnetic flux of superconductive thin film and device therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5996785A JPS5996785A (en) | 1984-06-04 |
| JPH0142512B2 true JPH0142512B2 (en) | 1989-09-13 |
Family
ID=16537244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57207284A Granted JPS5996785A (en) | 1982-11-25 | 1982-11-25 | Method for removing residual quantum magnetic flux of superconductive thin film and device therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5996785A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0433180A1 (en) * | 1989-12-15 | 1991-06-19 | Fujitsu Limited | Device for eliminating trap of magnetic flux in a superconduction circuit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07240539A (en) * | 1994-02-25 | 1995-09-12 | Chodendo Sensor Kenkyusho:Kk | Trapped magnetic flux removing method of superconductive magnetic shielding body |
| JP3962385B2 (en) | 2004-03-11 | 2007-08-22 | 株式会社日立製作所 | Immunoassay device and immunoassay method |
-
1982
- 1982-11-25 JP JP57207284A patent/JPS5996785A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0433180A1 (en) * | 1989-12-15 | 1991-06-19 | Fujitsu Limited | Device for eliminating trap of magnetic flux in a superconduction circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5996785A (en) | 1984-06-04 |
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