JPH0139206B2 - - Google Patents
Info
- Publication number
- JPH0139206B2 JPH0139206B2 JP55502160A JP50216080A JPH0139206B2 JP H0139206 B2 JPH0139206 B2 JP H0139206B2 JP 55502160 A JP55502160 A JP 55502160A JP 50216080 A JP50216080 A JP 50216080A JP H0139206 B2 JPH0139206 B2 JP H0139206B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- contact
- resistance
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 29
- 239000010931 gold Substances 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 229910052763 palladium Inorganic materials 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000005275 alloying Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 229910052790 beryllium Inorganic materials 0.000 description 8
- HOHAQBNFPZHTJB-UHFFFAOYSA-N beryllium gold Chemical compound [Be].[Au] HOHAQBNFPZHTJB-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- -1 Therefore Chemical compound 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910018731 Sn—Au Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- YTQAOBAJRIBHLX-UHFFFAOYSA-N germanium palladium Chemical compound [Pd]=[Ge] YTQAOBAJRIBHLX-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/079,451 US4366186A (en) | 1979-09-27 | 1979-09-27 | Ohmic contact to p-type InP |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56501227A JPS56501227A (US07122547-20061017-C00032.png) | 1981-08-27 |
| JPH0139206B2 true JPH0139206B2 (US07122547-20061017-C00032.png) | 1989-08-18 |
Family
ID=22150652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55502160A Expired JPH0139206B2 (US07122547-20061017-C00032.png) | 1979-09-27 | 1980-08-22 |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04154511A (ja) * | 1990-10-15 | 1992-05-27 | Kawasaki Steel Corp | リングの包装方法と包装装置 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4414561A (en) * | 1979-09-27 | 1983-11-08 | Bell Telephone Laboratories, Incorporated | Beryllium-gold ohmic contact to a semiconductor device |
| US4471005A (en) * | 1983-01-24 | 1984-09-11 | At&T Bell Laboratories | Ohmic contact to p-type Group III-V semiconductors |
| US4816881A (en) * | 1985-06-27 | 1989-03-28 | United State Of America As Represented By The Secretary Of The Navy | A TiW diffusion barrier for AuZn ohmic contacts to p-type InP |
| US5015603A (en) * | 1988-06-17 | 1991-05-14 | The United States Of America As Represented By The Secretary Of The Navy | TiW diffusion barrier for AuZn ohmic contact to P-Type InP |
| US5036023A (en) * | 1989-08-16 | 1991-07-30 | At&T Bell Laboratories | Rapid thermal processing method of making a semiconductor device |
| JPH03137081A (ja) * | 1989-10-23 | 1991-06-11 | Sumitomo Electric Ind Ltd | ｐ型ｃＢＮのオーム性電極形成方法 |
| JPH03167877A (ja) * | 1989-11-28 | 1991-07-19 | Sumitomo Electric Ind Ltd | ｎ型立方晶窒化硼素のオーム性電極及びその形成方法 |
| US5240877A (en) * | 1989-11-28 | 1993-08-31 | Sumitomo Electric Industries, Ltd. | Process for manufacturing an ohmic electrode for n-type cubic boron nitride |
| US5100835A (en) * | 1991-03-18 | 1992-03-31 | Eastman Kodak Company | Shallow ohmic contacts to N-GaAs |
| TW456058B (en) * | 2000-08-10 | 2001-09-21 | United Epitaxy Co Ltd | Light emitting diode and the manufacturing method thereof |
| US9065010B2 (en) * | 2011-06-28 | 2015-06-23 | Universal Display Corporation | Non-planar inorganic optoelectronic device fabrication |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3214654A (en) * | 1961-02-01 | 1965-10-26 | Rca Corp | Ohmic contacts to iii-v semiconductive compound bodies |
| NL276932A (US07122547-20061017-C00032.png) * | 1961-04-14 | |||
| US3942244A (en) * | 1967-11-24 | 1976-03-09 | Semikron Gesellschaft Fur Gleichrichterbau Und Elektronik M.B.H. | Semiconductor element |
| US3598997A (en) * | 1968-07-05 | 1971-08-10 | Gen Electric | Schottky barrier atomic particle and x-ray detector |
| US3620847A (en) * | 1969-05-05 | 1971-11-16 | Us Air Force | Silicon solar cell array hardened to space nuclear blast radiation |
| US3616406A (en) * | 1969-11-03 | 1971-10-26 | Bell Telephone Labor Inc | Preparation of glue layer for bonding gold to a substrate |
| CA926030A (en) * | 1970-05-05 | 1973-05-08 | Mayer Alfred | Connections for high temperature power rectifier |
| US3768151A (en) * | 1970-11-03 | 1973-10-30 | Ibm | Method of forming ohmic contacts to semiconductors |
| US3850688A (en) * | 1971-12-29 | 1974-11-26 | Gen Electric | Ohmic contact for p-type group iii-v semiconductors |
| JPS539712B2 (US07122547-20061017-C00032.png) * | 1972-05-18 | 1978-04-07 | ||
| FR2230078B1 (US07122547-20061017-C00032.png) * | 1973-05-18 | 1977-07-29 | Radiotechnique Compelec | |
| US4022931A (en) * | 1974-07-01 | 1977-05-10 | Motorola, Inc. | Process for making semiconductor device |
| US4011583A (en) * | 1974-09-03 | 1977-03-08 | Bell Telephone Laboratories, Incorporated | Ohmics contacts of germanium and palladium alloy from group III-V n-type semiconductors |
| US4068022A (en) * | 1974-12-10 | 1978-01-10 | Western Electric Company, Inc. | Methods of strengthening bonds |
| JPS51146180A (en) * | 1975-06-11 | 1976-12-15 | Mitsubishi Electric Corp | Iii-v family compound semi-conductor electric pole formation |
| US4064621A (en) * | 1976-09-16 | 1977-12-27 | General Motors Corporation | Cadmium diffused Pb1-x Snx Te diode laser |
| JPS5950106B2 (ja) * | 1976-10-15 | 1984-12-06 | 株式会社東芝 | 半導体素子の電極構造 |
| GB1574525A (en) * | 1977-04-13 | 1980-09-10 | Philips Electronic Associated | Method of manufacturing semiconductor devices and semiconductor devices manufactured by the method |
| US4258375A (en) * | 1979-04-09 | 1981-03-24 | Massachusetts Institute Of Technology | Gax In1-x Asy P1-y /InP Avalanche photodiode and method for its fabrication |
| US4260429A (en) * | 1980-05-19 | 1981-04-07 | Ses, Incorporated | Electrode for photovoltaic cell |
-
1979
- 1979-09-27 US US06/079,451 patent/US4366186A/en not_active Expired - Lifetime
-
1980
- 1980-08-22 DE DE8080901830T patent/DE3071336D1/de not_active Expired
- 1980-08-22 JP JP55502160A patent/JPH0139206B2/ja not_active Expired
- 1980-08-22 WO PCT/US1980/001079 patent/WO1981000932A1/en active IP Right Grant
-
1981
- 1981-04-08 EP EP80901830A patent/EP0037401B1/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04154511A (ja) * | 1990-10-15 | 1992-05-27 | Kawasaki Steel Corp | リングの包装方法と包装装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1981000932A1 (en) | 1981-04-02 |
| DE3071336D1 (en) | 1986-02-20 |
| JPS56501227A (US07122547-20061017-C00032.png) | 1981-08-27 |
| EP0037401A4 (en) | 1983-07-26 |
| EP0037401A1 (en) | 1981-10-14 |
| EP0037401B1 (en) | 1986-01-08 |
| US4366186A (en) | 1982-12-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6614115B2 (en) | Enhancement of carrier concentration in As-containing layers | |
| Chu et al. | Thin‐film junctions of cadmium telluride by metalorganic chemical vapor deposition | |
| JPH0634405B2 (ja) | 薄膜光起電力デバイス | |
| JP3408413B2 (ja) | 半導体の製造方法及び半導体装置 | |
| JPH0139206B2 (US07122547-20061017-C00032.png) | ||
| JP3583451B2 (ja) | 半導体デバイスの作製方法 | |
| US4179534A (en) | Gold-tin-gold ohmic contact to N-type group III-V semiconductors | |
| JPS62122183A (ja) | 半導体装置 | |
| JPS61500466A (ja) | 光検出器 | |
| US4414561A (en) | Beryllium-gold ohmic contact to a semiconductor device | |
| US4179308A (en) | Low cost high efficiency gallium arsenide homojunction solar cell incorporating a layer of indium gallium phosphide | |
| Werthen et al. | Ohmic contacts to n‐GaAs using low‐temperature anneal | |
| US20050179046A1 (en) | P-type electrodes in gallium nitride-based light-emitting devices | |
| US5063174A (en) | Si/Au/Ni alloyed ohmic contact to n-GaAs and fabricating process therefor | |
| JP2522892B2 (ja) | ＺｎＳｅ層上にオ―ム接点を設ける方法 | |
| JPH0616501B2 (ja) | デバイスの製造方法 | |
| EP0625801B1 (en) | Process for fabricating an ohmic electrode | |
| JP3348015B2 (ja) | ノンアロイ用電極コンタクト層の作製方法 | |
| Lee et al. | Rapid thermal annealing of Be+‐implanted In0. 52Al0. 48As | |
| Okamoto et al. | Fabrication of GaAs‐Mo‐Si structures by metalorganic chemical vapor deposition and laser annealing | |
| JP2929084B2 (ja) | 化合物半導体低接触抵抗電極の形成方法 | |
| JP2599391B2 (ja) | 半導体発光素子の製造方法および半導体発光素子 | |
| JPH0581197B2 (US07122547-20061017-C00032.png) | ||
| JP2940831B2 (ja) | ｐ型ＩＩ−ＶＩ族化合物半導体 | |
| JP2746241B2 (ja) | アロイ・オーミック・コンタクト電極及びその形成方法 |
