JPH0138373B2 - - Google Patents

Info

Publication number
JPH0138373B2
JPH0138373B2 JP58073212A JP7321283A JPH0138373B2 JP H0138373 B2 JPH0138373 B2 JP H0138373B2 JP 58073212 A JP58073212 A JP 58073212A JP 7321283 A JP7321283 A JP 7321283A JP H0138373 B2 JPH0138373 B2 JP H0138373B2
Authority
JP
Japan
Prior art keywords
lid
welding
pair
electrode
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58073212A
Other languages
Japanese (ja)
Other versions
JPS59198735A (en
Inventor
Hisashi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58073212A priority Critical patent/JPS59198735A/en
Publication of JPS59198735A publication Critical patent/JPS59198735A/en
Publication of JPH0138373B2 publication Critical patent/JPH0138373B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K11/00Resistance welding; Severing by resistance heating
    • B23K11/002Resistance welding; Severing by resistance heating specially adapted for particular articles or work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Description

【発明の詳細な説明】 (1) 発明の技術分野 本発明はシーム溶接法、詳しくは平行移動方式
シーム溶接機を用いるシーム溶接において溶接電
極がパツケージ基体上のふたに最初に接触する時
および離脱する時にスパークが発生することを防
止する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a seam welding method, more specifically, to a seam welding method using a parallel movement type seam welding machine, when a welding electrode first contacts a lid on a package base and when it is removed. This invention relates to a method for preventing sparks from occurring when

(2) 技術の背景 半導体パツケージにふたを取り付ける方法の一
つとしてシーム溶接法がある。第1図は半導体パ
ツケージ(以下には単にパツケージという)の断
面図で、同図において、1はパツケージ基体、2
はパツケージ基体1にろう付けされたシールフレ
ーム、3はふた、4は半導体チツプ、5は半導体
チツプ4の接続用のワイヤ、6はパツケージ基体
1内の配線層を介してワイヤ5に接続された外リ
ードをそれぞれ示す。
(2) Technical background Seam welding is one method of attaching a lid to a semiconductor package cage. Figure 1 is a cross-sectional view of a semiconductor package (hereinafter simply referred to as a package), in which 1 is a package base, 2
is a seal frame brazed to the package base 1, 3 is a lid, 4 is a semiconductor chip, 5 is a wire for connecting the semiconductor chip 4, and 6 is connected to the wire 5 via a wiring layer in the package base 1. The outer leads are shown respectively.

ふた3はシーム溶接機によつてシールフレーム
2に溶接されるが、そのためのシーム溶接機とし
て平行移動方式シーム溶接機を使用した場合のシ
ーム溶接法は第2図に平面図で示され、図示しな
い治具に固定されたパツケージは、第2図aに矢
印で示す方向に動かされ、このとき溶接電極7
(以下単に電極という)の間に例えば8ボルト、
140〜180アンペア程度のパワーが加えられる。電
極7は、コバールまたは42アロイで作られたふた
3に接触して平行移動して、ふた3とシールフレ
ーム2との接触部に発生するモジユール熱によつ
てふた3は溶融され、コバールまたはアロイ42で
作られたシールフレーム2に溶接される。
The lid 3 is welded to the seal frame 2 by a seam welding machine, and the seam welding method when a parallel movement seam welding machine is used as the seam welding machine is shown in a plan view in Fig. 2. The package fixed to the non-contact jig is moved in the direction shown by the arrow in FIG.
(hereinafter simply referred to as electrodes), for example, 8 volts between
Approximately 140 to 180 amperes of power can be applied. The electrode 7 contacts the lid 3 made of Kovar or 42 alloy and moves in parallel, and the lid 3 is melted by the module heat generated at the contact area between the lid 3 and the seal frame 2, and the lid 3 is made of Kovar or alloy. Welded to the seal frame 2 made of 42.

ふた3の長辺のすべてが溶接され溶接電極7が
ふた3から離脱すると、治具を第2図bに矢印
で示す如くに90゜回してパツケージの向きを変え
る。
When all the long sides of the lid 3 are welded and the welding electrode 7 is removed from the lid 3, the jig is turned 90 degrees as shown by the arrow in FIG. 2b to change the orientation of the package.

次いで第2図cに示される如く電極7,7間の
間隔を拡げ、矢印の方向にパツケージを移動し
ふた3の短辺をシールフレーム2に溶接する。
Next, as shown in FIG. 2c, the gap between the electrodes 7, 7 is widened, the package is moved in the direction of the arrow, and the short side of the lid 3 is welded to the seal frame 2.

上記の工程は空気中でも可能であるが、酸化を
防ぐためにドライボツクスと呼称される密封チエ
ンバ内で行なわれる。
Although the above steps can be carried out in air, they are carried out in a sealed chamber called a dry box to prevent oxidation.

上記した溶接法は第3図の正面図に模式的に示
され、最初電極7は実線で示される位置で電極7
が最初にふた3の縁と接触するときに溶接電流が
ONになり、パツケージを矢印の方向に動か
し、電極7がふた3の反対側の縁部に来たときの
位置は図に点線で示し、この位置から電極7が離
脱すると溶接電流がOFFになる。
The welding method described above is schematically shown in the front view of FIG.
When the first contact with the edge of the lid 3, the welding current
When the package cage is moved in the direction of the arrow and the electrode 7 reaches the opposite edge of the lid 3, the position is shown by the dotted line in the figure. When the electrode 7 is removed from this position, the welding current is turned OFF. .

(3) 従来技術と問題点 溶接電極がふたに最初接触するときおよびふた
から離脱するとき電極7はふた3の縁部のみと接
触しており、電流径路が制限されてスパークが発
生する。そのときの状態は第4図に示されるが、
矢印で示す方向に飛行するスパークによつて、シ
ールフレーム2とふた3の端縁部分が線8で示さ
れる部分に沿つて欠けることがある。そうなる
と、後の溶接によつてふた3がシールフレーム2
に溶接されても、この欠けた部分の密封は不完全
でその部分から封入したN2ガスがもれたりまた
は外からの湿気がパツケージ内に入ることにな
り、半導体パツケージの製造歩留りおよび製品の
信頼性に悪影響を及ぼす。
(3) Prior Art and Problems When the welding electrode first contacts the lid and when it separates from the lid, the electrode 7 contacts only the edge of the lid 3, which limits the current path and generates sparks. The situation at that time is shown in Figure 4,
Sparks flying in the direction indicated by the arrows may cause the edge portions of the seal frame 2 and lid 3 to chip along the line 8. In that case, the lid 3 will be attached to the seal frame 2 by later welding.
Even if the chip is welded, the sealing of this chipped part is incomplete, and the sealed N2 gas may leak from that part or moisture from the outside can enter the package, resulting in a reduction in the manufacturing yield of the semiconductor package and the quality of the product. Adversely affects reliability.

(4) 発明の目的 本発明は上記従来の問題点に鑑み、半導体パツ
ケージのふたをパツケージ基体にろう付けされた
シールフレームに溶接する平行移動方式シーム溶
接機を用いるシーム溶接において、電極がふたの
縁部分と接触するときおよびふたから離脱すると
きスパークが発生することの防止されるシーム溶
接方法を提供することを目的とする。
(4) Purpose of the Invention In view of the above-mentioned conventional problems, the present invention has been made to solve the above-mentioned problems in the conventional art. It is an object of the present invention to provide a seam welding method in which generation of sparks is prevented when contacting the edge portion and when separating from the lid.

(5) 発明の構成 そしてこの目的は本発明によれば、半導体パツ
ケージ基体に取り付けられたシールフレーム上の
金属のふたを載置し、該ふたの対向する2辺に一
対の溶接電極を接触させたまま移動させてシーム
溶接を行うに際して、該一対の溶接電極間に低電
圧を印加した状態で該一対の溶接電極を該ふたに
接触させた後、該一対の溶接電極間に印加する電
圧を上げて溶接を行い、該一対の溶接電極間に印
加する電圧を下げて低電圧にした状態で該一対の
溶接電極を該ふたから離脱させることを特徴とす
るシーム溶接法を提供することによつて達成され
る。
(5) Structure of the Invention According to the present invention, a metal lid is placed on a seal frame attached to a semiconductor package base, and a pair of welding electrodes are brought into contact with two opposing sides of the lid. When seam welding is performed by moving the pair of welding electrodes while the pair of welding electrodes is still moving, the pair of welding electrodes are brought into contact with the lid while a low voltage is applied between the pair of welding electrodes, and then the voltage applied between the pair of welding electrodes is By providing a seam welding method characterized in that the voltage applied between the pair of welding electrodes is lowered to a low voltage and the pair of welding electrodes are separated from the lid. will be achieved.

(6) 発明の実施例 本願発明者は、上記従来技術の問題点を解決す
るために第5図aに矩形波とbの正弦波に示され
るスロープ電流を通電することを考えた。横軸に
は時間(T)を、縦軸には電流(I)をとる第5図
は、電極7に流される電流波形であるが、溶接電
極がふたに最初に接触する時点A付近ではスパー
クを発生しえない弱い電流を流し、次いで溶接に
必要な電流を流す。また溶接電極がふたから離脱
する時点をBとすると、Bに近ずく直前において
電極値をスパークすることのないよう弱くして0
にもつて行く。
(6) Embodiments of the Invention In order to solve the above-mentioned problems of the prior art, the inventor of the present application considered applying a slope current as shown by a rectangular wave in FIG. 5a and a sine wave in b. Figure 5, which plots time (T) on the horizontal axis and current (I) on the vertical axis, shows the waveform of the current flowing through the electrode 7. Around point A, when the welding electrode first contacts the lid, there is a spark. A weak current that cannot generate the welding is applied, and then the current necessary for welding is applied. Also, if the point at which the welding electrode separates from the lid is B, then just before it approaches B, the electrode value should be weakened to 0 to prevent sparking.
I'll go there too.

このようなスロープ電流を流すことによつて、
すなわち溶接電極がふたに最初に接触する時点A
付近および溶接電極がふたから離脱する時点Bに
おいて、電極7に流す電流の値をスパークが発生
しえない弱い値に抑えることによつて、電極7が
ふた3の縁と接触するときのスパークの発生を防
止することが可能になる。
By passing such a slope current,
That is, the point A when the welding electrode first contacts the lid.
By suppressing the value of the current flowing through the electrode 7 to a weak value that does not generate sparks near the welding electrode and at the time B when the welding electrode separates from the lid, sparks when the electrode 7 contacts the edge of the lid 3 are reduced. It becomes possible to prevent the occurrence.

上記の如きスロープ電流は第6図に示す装置に
よつて得られる。パツケージが固定される治具9
は、通常のXY駆動系の軸10とかみ合い、軸1
0はモータ11によつて図に見て左右方向(X方
向)に駆動可能である。軸10はモータ11をこ
えてエンコーダー12に連結され、軸10のX方
向移動、従つて治具9のX方向動きはエンコーダ
ー12に伝えられ、エンコーダー12はフオトセ
ンサー13によつて検知され、検知の結果は信号
として電源14に送られ、電源14が電極7へ流
される電流を制御する。ふた3のX方向の長さを
前以つて測定しておくと、電極がふたに接触して
離脱するまで電流値は自動的に制御されることに
なる。Y方向の動きについては、パツケージの向
きが90゜変えられるだけであるので上記と全く同
様の原理で電流値や制御されうるので、第2図a
とcに示されるシーム溶接において、電極がふた
に接触し、離脱するときのスパークの発生を予防
することが可能となる。
A slope current as described above is obtained by the apparatus shown in FIG. Jig 9 where the package cage is fixed
meshes with axis 10 of the normal XY drive system, and axis 1
0 can be driven by a motor 11 in the left and right direction (X direction) as seen in the figure. The shaft 10 is connected to an encoder 12 via a motor 11, and the movement of the shaft 10 in the X direction, and hence the movement of the jig 9 in the X direction, is transmitted to the encoder 12, which is detected by a photo sensor 13, The result is sent as a signal to the power supply 14, which controls the current flowing to the electrode 7. If the length of the lid 3 in the X direction is measured in advance, the current value will be automatically controlled until the electrode contacts and separates from the lid. Regarding movement in the Y direction, since the direction of the package is simply changed by 90 degrees, the current value and control can be controlled using the same principle as above, so Figure 2 a
In the seam welding shown in and c, it is possible to prevent the generation of sparks when the electrode contacts and separates from the lid.

(7) 発明の効果 以上詳細に説明した如く、本発明の方法によれ
ば、平行移動方式による半導体装置にふたを溶接
するシーム溶接において、電極がふたの縁部と接
触するとき、すなわち電流がON、OFFになると
きのスパークの発生が防止され、半導体パツケー
ジの製造歩留りと信頼性の向上に効果大である。
(7) Effects of the Invention As explained in detail above, according to the method of the present invention, in seam welding for welding a lid to a semiconductor device using the parallel movement method, when the electrode contacts the edge of the lid, that is, when the current is This prevents the generation of sparks when turning on and off, which is highly effective in improving the manufacturing yield and reliability of semiconductor packages.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は半導体パツケージの断面図図、第2図
は平行移動方式によるシーム溶接を説明するため
の半導体パツケージの平面図、第3図はシーム溶
接における電極と半導体パツケージの配置を示す
正面図、第4図は第1図の半導体パツケージのふ
たとシールフレームの拡大図、第5図は本発明の
方法に用いられるスロープ電流の線図、第6図は
本発明の方法を実施する装置の配置図である。 1……パツケージ基体、2……シールフレー
ム、3……ふた、4……半導体チツプ、5……ワ
イヤ、6……外リード、7……溶接電極、8……
欠け線、9……治具、10……軸、11……モー
タ、12……フオトセンサー、13……エンコー
ダ、14……電極。
FIG. 1 is a sectional view of a semiconductor package, FIG. 2 is a plan view of the semiconductor package to explain seam welding using the parallel movement method, and FIG. 3 is a front view showing the arrangement of electrodes and semiconductor packages in seam welding. FIG. 4 is an enlarged view of the lid and sealing frame of the semiconductor package shown in FIG. 1, FIG. 5 is a diagram of the slope current used in the method of the present invention, and FIG. 6 is the arrangement of equipment for carrying out the method of the present invention. It is a diagram. DESCRIPTION OF SYMBOLS 1...Package base, 2...Seal frame, 3...Lid, 4...Semiconductor chip, 5...Wire, 6...Outer lead, 7...Welding electrode, 8...
Missing line, 9... Jig, 10... Axis, 11... Motor, 12... Photo sensor, 13... Encoder, 14... Electrode.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体パツケージ基体に取り付けられたシー
ルフレーム上の金属のふたを載置し、該ふたの対
向する2辺に一対の溶接電極を接触させたまま移
動させてシーム溶接を行うに際して、該一対の溶
接電極間に低電圧を印加した状態で該一対の溶接
電極を該ふたに接触させた後、該一対の溶接電極
間に印加する電圧を上げて溶接を行い、該一対の
溶接電極間に印加する電圧を下げて低電圧にした
状態で該一対の溶接電極を該ふたから離脱させる
ことを特徴とするシーム溶接法。
1. When performing seam welding by placing a metal lid on a seal frame attached to a semiconductor package base and moving a pair of welding electrodes while keeping them in contact with two opposing sides of the lid, After bringing the pair of welding electrodes into contact with the lid with a low voltage applied between the electrodes, welding is performed by increasing the voltage applied between the pair of welding electrodes, and applying it between the pair of welding electrodes. A seam welding method characterized in that the pair of welding electrodes is separated from the lid while the voltage is lowered to a low voltage.
JP58073212A 1983-04-26 1983-04-26 Seam welding process Granted JPS59198735A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58073212A JPS59198735A (en) 1983-04-26 1983-04-26 Seam welding process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58073212A JPS59198735A (en) 1983-04-26 1983-04-26 Seam welding process

Publications (2)

Publication Number Publication Date
JPS59198735A JPS59198735A (en) 1984-11-10
JPH0138373B2 true JPH0138373B2 (en) 1989-08-14

Family

ID=13511622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58073212A Granted JPS59198735A (en) 1983-04-26 1983-04-26 Seam welding process

Country Status (1)

Country Link
JP (1) JPS59198735A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010201509A (en) * 2010-06-21 2010-09-16 Akim Kk Welding failure detection method, seam welding failure detection device, and seam welding device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4926397B2 (en) * 2004-12-15 2012-05-09 株式会社Fts Welding control device for seam welding machine
JP2007075857A (en) * 2005-09-14 2007-03-29 Nippon Dempa Kogyo Co Ltd Seam welding machine
CN113996992B (en) * 2021-11-17 2024-04-19 新疆冶金建设(集团)有限责任公司 Mounting and positioning auxiliary tool for guardrail of window protection with adjustable height

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5744437A (en) * 1980-09-01 1982-03-12 Toyo Seikan Kaisha Ltd Manufacture of cover capable to open easily

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5744437A (en) * 1980-09-01 1982-03-12 Toyo Seikan Kaisha Ltd Manufacture of cover capable to open easily

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010201509A (en) * 2010-06-21 2010-09-16 Akim Kk Welding failure detection method, seam welding failure detection device, and seam welding device

Also Published As

Publication number Publication date
JPS59198735A (en) 1984-11-10

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