JPH0136990B2 - - Google Patents
Info
- Publication number
- JPH0136990B2 JPH0136990B2 JP20892683A JP20892683A JPH0136990B2 JP H0136990 B2 JPH0136990 B2 JP H0136990B2 JP 20892683 A JP20892683 A JP 20892683A JP 20892683 A JP20892683 A JP 20892683A JP H0136990 B2 JPH0136990 B2 JP H0136990B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- cutting
- cleavage
- wafer
- cutting tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005520 cutting process Methods 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 24
- 238000003776 cleavage reaction Methods 0.000 claims description 23
- 230000007017 scission Effects 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 24
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Dicing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58208926A JPS60102786A (ja) | 1983-11-09 | 1983-11-09 | 棒状単結晶体製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58208926A JPS60102786A (ja) | 1983-11-09 | 1983-11-09 | 棒状単結晶体製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60102786A JPS60102786A (ja) | 1985-06-06 |
JPH0136990B2 true JPH0136990B2 (enrdf_load_stackoverflow) | 1989-08-03 |
Family
ID=16564411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58208926A Granted JPS60102786A (ja) | 1983-11-09 | 1983-11-09 | 棒状単結晶体製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60102786A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2524896Y2 (ja) * | 1987-02-17 | 1997-02-05 | 日本電気株式会社 | 円形化合物半導体基板 |
KR101990013B1 (ko) * | 2019-01-16 | 2019-06-17 | 김멋진 | 절단용 블레이드 및 이를 이용한 절단장치 |
-
1983
- 1983-11-09 JP JP58208926A patent/JPS60102786A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60102786A (ja) | 1985-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3532100B2 (ja) | レーザ割断方法 | |
USRE39001E1 (en) | Laser cutting method for forming magnetic recording head sliders | |
US20020066186A1 (en) | Safety razor | |
US5439723A (en) | Substrate for producing semiconductor wafer | |
US4661201A (en) | Preferential etching of a piezoelectric material | |
CN1122518A (zh) | 形成部分分离薄膜元件条的方法 | |
US4498451A (en) | Cutting articles along known planes | |
JPH04262589A (ja) | 光半導体装置の製造方法 | |
EP0951980B1 (en) | Apparatus for cleaving crystals | |
JPH0136990B2 (enrdf_load_stackoverflow) | ||
JPH11224865A (ja) | 酸化物単結晶基板のレーザによる切断方法 | |
JP2013026517A (ja) | 半導体光素子を作製する方法、及び半導体光素子 | |
JPH0983081A (ja) | 半導体レーザ素子の製造方法 | |
JPS5874600A (ja) | 単結晶板の劈開方法 | |
JPH02132844A (ja) | 化合物半導体ウェハの分割方法 | |
US6077720A (en) | Method for fabricating semiconductor laser facets using combined cleave and polish technique | |
JPS59200437A (ja) | 割断方法 | |
JP2005101120A (ja) | 化合物半導体ウェハ及びその劈開方法 | |
JPH0447459B2 (enrdf_load_stackoverflow) | ||
JPH05172709A (ja) | ミクロトーム用ダイヤモンドナイフおよびその製造方法 | |
JPH11329325A (ja) | メッシュおよび薄片試料の作製方法 | |
JP4797276B2 (ja) | 単結晶インゴットの切断方法 | |
JPH01166593A (ja) | 半導体レーザの劈開方法 | |
JPS6226183B2 (enrdf_load_stackoverflow) | ||
JPS5820772B2 (ja) | ぜい性材料の加工方法 |