JPH0133357B2 - - Google Patents
Info
- Publication number
- JPH0133357B2 JPH0133357B2 JP54084223A JP8422379A JPH0133357B2 JP H0133357 B2 JPH0133357 B2 JP H0133357B2 JP 54084223 A JP54084223 A JP 54084223A JP 8422379 A JP8422379 A JP 8422379A JP H0133357 B2 JPH0133357 B2 JP H0133357B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording
- metal
- present
- recording material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 37
- 239000011368 organic material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 59
- 239000000126 substance Substances 0.000 description 20
- -1 Aromatic sulfonic acids Chemical class 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- ISAKRJDGNUQOIC-UHFFFAOYSA-N Uracil Chemical compound O=C1C=CNC(=O)N1 ISAKRJDGNUQOIC-UHFFFAOYSA-N 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 2
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- OPTASPLRGRRNAP-UHFFFAOYSA-N cytosine Chemical compound NC=1C=CNC(=O)N=1 OPTASPLRGRRNAP-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- RWQNBRDOKXIBIV-UHFFFAOYSA-N thymine Chemical compound CC1=CNC(=O)NC1=O RWQNBRDOKXIBIV-UHFFFAOYSA-N 0.000 description 2
- 229940035893 uracil Drugs 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- UOFGSWVZMUXXIY-UHFFFAOYSA-N 1,5-Diphenyl-3-thiocarbazone Chemical compound C=1C=CC=CC=1N=NC(=S)NNC1=CC=CC=C1 UOFGSWVZMUXXIY-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- UHGULLIUJBCTEF-UHFFFAOYSA-N 2-aminobenzothiazole Chemical compound C1=CC=C2SC(N)=NC2=C1 UHGULLIUJBCTEF-UHFFFAOYSA-N 0.000 description 1
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 1
- LRSASMSXMSNRBT-UHFFFAOYSA-N 5-methylcytosine Chemical compound CC1=CNC(=O)N=C1N LRSASMSXMSNRBT-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 229940104302 cytosine Drugs 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229920000205 poly(isobutyl methacrylate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical compound [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 150000003560 thiocarbamic acids Chemical class 0.000 description 1
- 150000003583 thiosemicarbazides Chemical class 0.000 description 1
- 229940113082 thymine Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
Description
本発明は高密度エネルギー光の照射によつて熱
的に変形する記録層を有する記録材料に関するも
のである。
レーザ光等の高密度エネルギー光が照射される
とその記録層が高密度エネルギー光の熱によつて
融解、蒸発、凝集などの熱的な変形を生じ、その
変形した領域の光学的な特性が変化することによ
つて情報が記録される熱的(ヒート・モード)記
録材料が知られている。このような熱的記録材料
への記録方法における高密度エネルギー光の照射
方法としては、たとえば記録すべき情報を電気的
な時系列信号に変換し、その信号に応じてレーザ
光の強度を変調し、その変調したレーザ光を記録
材料上を走査させる方法や、2次元的な光学的情
報体を介してストロボ光によつて平面的に照射す
るかレーザ光などの走査によつて照射する方法な
どがあるが、きわめて短時間の照射のみで熱的な
変形を起こさせてしまうものが多く、照射すなわ
ち記録の完了であつて現像などの後処理が不要な
ものが一般である。
このような熱的記録材料の記録層としては金
属、染料、プラスチツク等の安価な材料を用いる
ことができるが、記録感度の高いものとしては特
定の金属を用いるものや各種の層構成のものが知
られている。たとえば特公昭46−40479号公報に
は記録層がゲルマニウム、ビスマス、セレンの三
層から構成されるものが記録されている。こゝで
ゲルマニウム層はビスマス層の照射光に対する反
射率を低下させるものであり、セレン層は蒸発し
易い層であり、いずれもビスマス単層の場合より
も少ないエネルギーによつて主なる記録層である
ビスマス層の熱的な変形を促進させる。さらに反
射減少ないし反射防止をするための層は特開昭50
−151151号公報や特公昭51−14263号公報にも記
載されている。また記録層とその支持体との間の
熱伝導を減少させる層を設けたものは特開昭50−
126237号公報や特開昭51−16026号公報に記載さ
れている。また本発明者等の出願による特開昭51
−78236号公報および特開昭52−20821号公報には
金属硫化物、金属ふつ化物あるいは金属酸化物を
金属と重層あるいは混合した記録層が記載されて
おり、また特開昭53−83617号公報には、ハロゲ
ン化物を金属と重層あるいは混合した記録層が記
載されている。本発明者はさらに鋭意研究を重ね
た結果上述の各記録材料より同等以上の高感度の
新しい記録材料を見出し、本発明に結びついたも
のである。
本発明の目的は高感度の熱的記録材料を提供す
ることである。また本発明の目的は記録画質のす
ぐれた高感度の熱的記録材料を提供することであ
る。また本発明の目的は公害発生の危険のない高
感度の記録材料を提供することである。さらに本
発明の目的は安価でしかも製造工程の少ない高感
度の記録材料を提供することである。
すなわち本発明は、基板上に設けられた高密度
エネルギー光の照射により熱的変形を生ずる記録
層が第1層として金属、第2層として有機物、第
3層として金属を蒸着により順次積層してなる記
録層であることを特徴とする記録材料である。
本発明において蒸着とは、通常の抵抗加熱方式
による真空蒸着はもちろん;電子ビーム加熱方式
の真空蒸着、スパツタリング、イオンプレーテイ
ング及びプラズマデポジツシヨン等を含む方法の
ことである。
本発明に用いられる基板としてはプラスチツク
ス、紙、ガラス等従来より知られている一般の記
録材料の基板と同じものでよい。また高密度エネ
ルギー光とは集束されたレーザ光がストロボ光の
ごとき光であり記録材料の記録層を熱的に変形さ
せるものであればよい。熱的変形とは融解、蒸発
凝集、その他の熱が原因となつて起きる変形であ
り、その変形の結果非変形領域とは光学的な諸特
性たとえば透過率、反射率、光散乱性などに容易
に検知しうる差異を有する程度の変形であればよ
い。
本発明に用いられる金属としては各種のものが
可能であり、たとえば特開昭52−20821号公報に
開示されているものでよく、特に実用性の点から
Mg、Mn、Cu、Zn、Al、In、Sn、Biなどがよ
い。とりわけ低触点、仮反射率のものとしてIn、
Sn、Biなどが好ましい金属である。これらの金
属は単独であるいは2個以上または合金の状態で
本発明に用いられる。また第1層に使用する金属
と第3層として使用する金属は同一でもよいし、
異つていてもよい。
本発明に用いられる有機物質としては各種のも
のがある。それらの有機物質として必要な条件は
少なくとも常温で固体で真空蒸着が可能な性質を
有することである。融点、昇華温度などは可能な
限り低いことが好ましいが、その物質の蒸着前あ
るいは蒸着後の安定性のよいものが好ましい。し
かしながら有機物質の場合はその融点、昇華温度
は350℃程度のものが多いのでほとんどのものを
用いることができる。たとえば有機カルボン酸は
本発明に用いられる好ましい有機物質であり、ベ
ヘン酸、ステアリン酸、パルミチン酸、ミリスチ
ン酸などで例示される高級脂肪酸、フタール酸、
イソフタール酸、ピロメリツト酸、アニス酸、ク
マリン酸、ケイ皮酸などで例示される芳香環を有
するカルボン酸、フマール酸、コハク酸、セバシ
ン酸、シユウ酸、ピメリン酸などで例示される多
価カルボン酸、その他アビエチン酸などが好まし
いものである。これらの酸の塩およびエステル類
も同様に好ましいものである。またスルフアニル
酸のごとき芳香族スルホン酸も好ましい有機物質
である。高分子化合物も好ましい有機物質であ
り、たとえばポリメタクリル酸、ポリスチレン、
ナイロン、ポリビニルアルコール、ポリエチレン
オキサイド、メチルセルロース、ポリビニルブチ
ラール、ポリメタアクリル酸メチル、ポリメタア
クリル酸イソブチル、ポリエチレン、ロジン樹脂
などがある。有機非環式硫黄化合物も好ましい有
機物質であり、たとえばチオ尿素およびその誘導
体、ジチゾンなどのチオセミカルバジドおよびそ
の誘導体、ジエチルジチオカルバミン酸などのチ
オカルバミン酸およびその誘導体、チオベンゾフ
エノンおよびその誘導体がある。窒素あるいは硫
黄を有するヘテロ環化合物も好ましい有機物質で
あり、たとえばベンツイミダゾール、2−メルカ
プトベンツイミダゾール等のイミダゾールおよび
その誘導体、ベンツトリアゾール等のトリアゾー
ルおよびその誘導体、メルカプト、フエニルテト
ラゾール等のテトラゾールおよびその誘導体等、
ベンツチアゾール、2メルカプトベンツチアゾー
ル、2−アミノベンツチアゾールなどのチアゾー
ルおよびその誘導体がある。さらに、核酸中に含
まれるピリミジン塩基であるシトシン、ウラシ
ル、チミン、5−メチルシトシン、オキシメチル
シトシンは、無毒性であり、好ましく用いられ
る。
これらの有機物質は単独であるいは適当な組み
合せで本発明に用いられる。
以下に図面により本発明の記録材料を説明す
る。第1図〜第4図は、従来からよく知られてい
る熱的記録材料の断面図であり、第5図は本発明
の記録材料の1例の断面図である。各図を通し
て、1は基板、2は金属層、3は反射防止層、4
は有機物層、5は金属と無機物又は有機物の混合
層である。
本発明の記録材料(第5図)において、基板1
に接して第1層の金属2が設けられており、上記
第1層の上に第2層の有機物4が設けられ、さら
に第2層上に第3層の金属6が設けられている。
本発明の記録材料(第5図)における第1層の
金属2は、公知の記録材料(第1図〜第4図)の
金属2もしくは金属と無機化合物あるいは有機化
合物の混合層5と同様に主として記録材料の光学
濃度を決定するものである。
第1層の金属2の膜厚は、100〜5000A、好ま
しくは200〜2000Aであるが、金属の光学的性質
やその他の物理的、化学的性質、製造条件、ある
いは記録材料の用途に応じて、適当に決定するこ
とができる。
本発明において、第2層の有機物4、第3層の
金属6は第1層上に順次積層することにより、記
録に要する高密度エネルギー光に対する反射率を
低下することができ、照射した光を記録層が有効
に吸収することができる。
有機物と金属とを順次積層することにより反射
率が低下する理由はかならずしも明らかではない
が、第2層の有機物4の上に第3層の金属6を蒸
着により設ける際に、有機物と金属とが何らかの
相互作用を起こしているか、もしくは、有機物上
に金属を蒸着することにより、金属が微少な島状
に分散するかして、反射率が低下するものと考え
られる。
第2層、第3層の膜厚は、有機物の種類、金属
の種類、製造条件等により異なるが、記録材料の
反射率が最低になるように適当に選ぶことができ
る。
第2層の有機物4の膜厚としては10A〜
3000A、好ましくは50A〜500Aであり、第3層の
金属6の膜厚は10A〜2000A、好ましくは30A〜
500Aである。
上記第1層金属、第2層有機物、第3層金属
は、いわゆる層状構造ではなく、島状構造、一部
互に反応したような構造でもよく、均一な層状で
ある必要はない。
有機物は一般に熱伝導性が悪いために、光が照
射された領域から逃げにくいので吸収された熱が
有効にその領域の記録物質の熱的変形に利用され
る。また熱的に変形した領域の記録物質は有機物
質のために容易に小さい球状に凝集するので記録
痕跡は非照射部との境界が明瞭であるので解像度
の良好な記録がなされる。
また、本発明の記録層を構成する金属及び有機
物はほとんど毒性はなく、安価であり、全て蒸着
により製造することができるので製造プロセスも
簡単となり高感度の記録材料を得ることが可能で
ある。
以下、実施例により、本発明を説明するが、本
発明はこれらによつて限定されるものではない。
実施例 1
厚さ100μのポリエチレンテレフタレート基板
上に、真空度5×10-5torrでSnを300A蒸着した。
次いで同一真空装置内でポリエチレン(三洋化成
製、サンワツクス)を300A蒸着し、さらにSnを
100A蒸着して本発明試料を作成した。比較試料
1としてSnを300A蒸着しただけの試料、比較試
料2としてSn300A蒸着し、次にポリエチレン
300A蒸着した試料を用意した。
これらの記録材料にアルゴンイオンレーザ光
(波長5145A)を25mm径に集光して走査速度19
m/secで照射し熱的変形を起こさせて照射部の
透過濃度を低下させることにより記録をおこなつ
た。この記録に要するレーザ光の最小出力強度
(以下閾値と称する)を求め、この閾値の大小で
各記録材料の相対的な感度評価を行つた。本発明
による記録材料は比較試料1、比較試料2に比べ
て記録に要する閾値が1/3より小さいから、本発
明によつて3倍以上の感度上昇が得られた。第1
表に上記の結果及び、可視光に対する透過濃度を
示す。
The present invention relates to a recording material having a recording layer that is thermally deformed by irradiation with high-density energy light. When irradiated with high-density energy light such as a laser beam, the recording layer undergoes thermal deformation such as melting, evaporation, and aggregation due to the heat of the high-density energy light, and the optical characteristics of the deformed area change. Thermal (heat mode) recording materials in which information is recorded by changes are known. As a method of irradiating high-density energy light in such a recording method on a thermal recording material, for example, the information to be recorded is converted into an electrical time-series signal, and the intensity of the laser light is modulated according to the signal. , a method of scanning the recording material with the modulated laser light, a method of irradiating the recording material with a two-dimensional optical information carrier, and irradiating the recording material with strobe light or scanning laser light, etc. However, in many cases thermal deformation occurs after only a very short period of irradiation, and in general, irradiation, that is, recording is complete, and post-processing such as development is not required. Inexpensive materials such as metals, dyes, and plastics can be used as the recording layer of such thermal recording materials, but materials with high recording sensitivity include those using specific metals and those with various layer configurations. Are known. For example, Japanese Patent Publication No. 46-40479 discloses a recording layer composed of three layers of germanium, bismuth, and selenium. Here, the germanium layer reduces the reflectance of the bismuth layer to irradiated light, and the selenium layer is a layer that evaporates easily, and both can be used as the main recording layer with less energy than in the case of a single bismuth layer. Accelerate thermal deformation of certain bismuth layers. Furthermore, a layer for reducing or preventing reflection was developed in JP-A-50
It is also described in Publication No.-151151 and Japanese Patent Publication No. 51-14263. In addition, a layer provided with a layer for reducing heat conduction between the recording layer and its support was disclosed in Japanese Patent Application Laid-Open No.
It is described in Publication No. 126237 and Japanese Unexamined Patent Publication No. 16026/1983. Also, the patent application filed in 1973 by the present inventors, etc.
-78236 and JP-A-52-20821 disclose recording layers in which metal sulfides, metal fluorides, or metal oxides are layered or mixed with metal, and JP-A-53-83617 describes describes a recording layer in which a halide is layered or mixed with a metal. As a result of further intensive research, the present inventors discovered a new recording material with a sensitivity equal to or higher than that of the above-mentioned recording materials, which led to the present invention. It is an object of the present invention to provide a highly sensitive thermal recording material. Another object of the present invention is to provide a highly sensitive thermal recording material with excellent recording image quality. Another object of the present invention is to provide a highly sensitive recording material without the risk of causing pollution. A further object of the present invention is to provide a highly sensitive recording material that is inexpensive and requires fewer manufacturing steps. That is, in the present invention, the recording layer, which is provided on a substrate and undergoes thermal deformation when irradiated with high-density energy light, is formed by sequentially stacking a metal as the first layer, an organic material as the second layer, and a metal as the third layer by vapor deposition. This is a recording material characterized by a recording layer consisting of: In the present invention, evaporation refers to methods including vacuum evaporation using an ordinary resistance heating method, vacuum evaporation using an electron beam heating method, sputtering, ion plating, plasma deposition, and the like. The substrate used in the present invention may be the same as the substrate of conventionally known general recording materials such as plastic, paper, glass, etc. Further, the high-density energy light may be a focused laser light such as a strobe light that thermally deforms the recording layer of the recording material. Thermal deformation refers to deformation caused by melting, evaporation and agglomeration, or other forms of heat. It is sufficient that the deformation is such that it has a detectable difference. Various metals can be used as the metal used in the present invention, and for example, metals disclosed in Japanese Patent Application Laid-Open No. 52-20821 may be used.
Mg, Mn, Cu, Zn, Al, In, Sn, Bi, etc. are preferable. In particular, those with low touch point and temporary reflectance,
Preferred metals include Sn and Bi. These metals may be used alone, in combination of two or more, or in the form of an alloy in the present invention. Further, the metal used for the first layer and the metal used for the third layer may be the same,
They can be different. There are various organic substances that can be used in the present invention. The necessary conditions for these organic substances are that they are solid at least at room temperature and have properties that allow vacuum deposition. It is preferable that the melting point, sublimation temperature, etc. be as low as possible, but it is preferable that the substance has good stability before or after vapor deposition. However, in the case of organic substances, their melting point and sublimation temperature are often around 350°C, so almost any organic substance can be used. For example, organic carboxylic acids are preferred organic substances used in the present invention, including higher fatty acids such as behenic acid, stearic acid, palmitic acid, myristic acid, phthalic acid,
Carboxylic acids with aromatic rings, such as isophthalic acid, pyromellitic acid, anisic acid, coumaric acid, and cinnamic acid; polycarboxylic acids, such as fumaric acid, succinic acid, sebacic acid, oxalic acid, and pimelic acid. , abietic acid and the like are preferred. Salts and esters of these acids are likewise preferred. Aromatic sulfonic acids such as sulfanilic acid are also preferred organic materials. Polymeric compounds are also preferred organic materials, such as polymethacrylic acid, polystyrene,
Examples include nylon, polyvinyl alcohol, polyethylene oxide, methyl cellulose, polyvinyl butyral, polymethyl methacrylate, polyisobutyl methacrylate, polyethylene, and rosin resin. Organic acyclic sulfur compounds are also preferred organic substances, such as thiourea and its derivatives, thiosemicarbazides and their derivatives such as dithizone, thiocarbamic acids and their derivatives such as diethyldithiocarbamic acid, thiobenzophenones and their derivatives. . Heterocyclic compounds containing nitrogen or sulfur are also preferred organic substances, such as imidazoles and their derivatives such as benzimidazole and 2-mercaptobenzimidazole, triazoles such as benztriazole and their derivatives, tetrazoles such as mercapto and phenyltetrazole, and their derivatives. derivatives etc.
There are thiazoles and their derivatives such as benzthiazole, 2-mercaptobenzthiazole, and 2-aminobenzthiazole. Furthermore, pyrimidine bases contained in nucleic acids, such as cytosine, uracil, thymine, 5-methylcytosine, and oxymethylcytosine, are nontoxic and are preferably used. These organic substances may be used alone or in appropriate combinations in the present invention. The recording material of the present invention will be explained below with reference to the drawings. 1 to 4 are cross-sectional views of conventionally well-known thermal recording materials, and FIG. 5 is a cross-sectional view of one example of the recording material of the present invention. Throughout each figure, 1 is a substrate, 2 is a metal layer, 3 is an antireflection layer, 4
5 is an organic material layer, and 5 is a mixed layer of metal and inorganic or organic material. In the recording material of the present invention (FIG. 5), the substrate 1
A first layer of metal 2 is provided in contact with the first layer, a second layer of organic material 4 is provided on the first layer, and a third layer of metal 6 is provided on the second layer. The metal 2 of the first layer in the recording material of the present invention (FIG. 5) is similar to the metal 2 or the mixed layer 5 of metal and an inorganic compound or an organic compound in the known recording material (FIGS. 1 to 4). It mainly determines the optical density of the recording material. The film thickness of the first layer of metal 2 is 100 to 5000A, preferably 200 to 2000A, but it may vary depending on the optical properties of the metal, other physical and chemical properties, manufacturing conditions, or the use of the recording material. , can be determined appropriately. In the present invention, by sequentially laminating the organic substance 4 of the second layer and the metal 6 of the third layer on the first layer, it is possible to reduce the reflectance of the high-density energy light required for recording, and to reduce the reflectance of the irradiated light. The recording layer can absorb effectively. The reason why the reflectance decreases when an organic substance and a metal are sequentially laminated is not necessarily clear, but when the third layer of metal 6 is provided on the second layer of organic substance 4 by vapor deposition, the organic substance and metal are It is thought that the reflectance decreases due to some kind of interaction, or because the metal is vapor-deposited on the organic substance, causing the metal to be dispersed into minute islands. The thicknesses of the second and third layers vary depending on the type of organic material, type of metal, manufacturing conditions, etc., but can be appropriately selected so that the reflectance of the recording material is minimized. The thickness of the second layer of organic substance 4 is 10A~
3000A, preferably 50A to 500A, and the thickness of the third layer metal 6 is 10A to 2000A, preferably 30A to
It is 500A. The first layer metal, the second layer organic substance, and the third layer metal do not have a so-called layered structure, but may have an island structure or a structure in which they partially react with each other, and do not need to have a uniform layered structure. Since organic substances generally have poor thermal conductivity, it is difficult for the light to escape from the irradiated area, so the absorbed heat is effectively used to thermally deform the recording material in that area. Further, since the recording material in the thermally deformed area is an organic substance, it easily aggregates into small spheres, so the boundary between the recording trace and the non-irradiated area is clear, so that recording with good resolution can be achieved. Furthermore, the metals and organic substances constituting the recording layer of the present invention have almost no toxicity, are inexpensive, and can be manufactured entirely by vapor deposition, which simplifies the manufacturing process and makes it possible to obtain a highly sensitive recording material. The present invention will be explained below with reference to Examples, but the present invention is not limited thereto. Example 1 On a polyethylene terephthalate substrate with a thickness of 100 μm, 300 A of Sn was vapor-deposited at a vacuum degree of 5×10 −5 torr.
Next, polyethylene (manufactured by Sanyo Kasei, Sanwax) was evaporated at 300A in the same vacuum equipment, and Sn was further deposited.
A sample of the present invention was prepared by vapor deposition at 100A. Comparative sample 1 is a sample in which Sn is vapor-deposited at 300A, comparative sample 2 is a sample in which Sn is vapor-deposited at 300A, and then polyethylene is vapor-deposited.
A sample with 300A vapor deposition was prepared. Argon ion laser light (wavelength 5145A) was focused on these recording materials to a diameter of 25 mm, and the scanning speed was 19.
Recording was performed by irradiating at m/sec to cause thermal deformation and lowering the transmission density of the irradiated area. The minimum output intensity of the laser beam required for this recording (hereinafter referred to as threshold value) was determined, and the relative sensitivity of each recording material was evaluated based on the magnitude of this threshold value. Since the recording material according to the present invention has a threshold value required for recording smaller than 1/3 of Comparative Sample 1 and Comparative Sample 2, an increase in sensitivity of more than 3 times was obtained by the present invention. 1st
The above results and the transmission density for visible light are shown in the table.
【表】
実施例 2
厚さ100μのポリエチレンテレフタレート基板
上に、真空度5×10-5torrでSnを300A蒸着した。
次いで同一真空装置内でウラシルを200A蒸着し、
さらにInを80A蒸着した。比較試料3として、Sn
を300A蒸着し、その上にGeSをさらに200A蒸着
した試料を用意した。
実施例1と同様の方法で感度評価を行つたとこ
ろ、第2表に示すごとく本発明の試料は閾値が
100mW、比較試料3は125mWであり、本発明の
記録材料の方が20%以上高感度であつた。[Table] Example 2 On a polyethylene terephthalate substrate with a thickness of 100 μm, 300 A of Sn was vapor-deposited at a vacuum degree of 5×10 −5 torr.
Next, 200A of uracil was deposited in the same vacuum device,
Furthermore, In was vapor-deposited at 80A. As comparative sample 3, Sn
A sample was prepared in which GeS was evaporated for 300A and GeS was further evaporated for 200A on top of it. Sensitivity evaluation was performed in the same manner as in Example 1, and as shown in Table 2, the samples of the present invention had a threshold value.
100 mW, and comparative sample 3 had a power of 125 mW, indicating that the recording material of the present invention had a higher sensitivity by 20% or more.
第1図〜第4図は公知の記録材料の断面図、第
5図は本発明の記録材料の層構成を示す断面図で
ある。
図中、1は基板、2は金属層、3は金属もしく
は無機物もしくは有機物の反射防止層、4は有機
物層、5は金属と無機物または有機物の混合層、
6は本発明の第3層としての金属層を示す。
1 to 4 are cross-sectional views of known recording materials, and FIG. 5 is a cross-sectional view showing the layer structure of the recording material of the present invention. In the figure, 1 is a substrate, 2 is a metal layer, 3 is a metal or inorganic or organic antireflection layer, 4 is an organic layer, 5 is a mixed layer of metal and inorganic or organic material,
6 indicates a metal layer as the third layer of the present invention.
Claims (1)
射により熱的変形を生ずる記録層が、第1層とし
て金属、第2層として有機物、第3層として金属
を蒸着により順次積層してなり、第1層及び第3
層の金属はMg、Mn、Cu、Zn、Al、In、Sn及び
Biからなる群から選ばれかつ膜厚がそれぞれ200
〜2000A及び30〜500Aであり、第2層の膜厚が
50〜500Aであることを特徴とする記録材料。1. A recording layer provided on a substrate that causes thermal deformation when irradiated with high-density energy light is formed by sequentially stacking a metal as the first layer, an organic material as the second layer, and a metal as the third layer by vapor deposition. 1st layer and 3rd layer
The layer metals are Mg, Mn, Cu, Zn, Al, In, Sn and
Bi selected from the group consisting of Bi and each having a film thickness of 200
~2000A and 30~500A, and the thickness of the second layer is
Recording material characterized by being 50-500A.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8422379A JPS568294A (en) | 1979-07-03 | 1979-07-03 | Recording material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8422379A JPS568294A (en) | 1979-07-03 | 1979-07-03 | Recording material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS568294A JPS568294A (en) | 1981-01-28 |
JPH0133357B2 true JPH0133357B2 (en) | 1989-07-12 |
Family
ID=13824472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8422379A Granted JPS568294A (en) | 1979-07-03 | 1979-07-03 | Recording material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568294A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121149A (en) * | 1981-12-22 | 1983-07-19 | Fujitsu Ltd | Recording medium |
JPS59168948A (en) * | 1983-03-16 | 1984-09-22 | Konishiroku Photo Ind Co Ltd | Optical information recording medium |
JPS6078786A (en) * | 1983-10-05 | 1985-05-04 | Dainippon Printing Co Ltd | Optical recording material |
JPS60147391A (en) * | 1984-01-11 | 1985-08-03 | Pioneer Electronic Corp | Optical-type information recording medium |
WO2010062723A2 (en) * | 2008-11-03 | 2010-06-03 | Brigham Young University | Data storage media containing magnesium metal layer |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53141040A (en) * | 1977-05-16 | 1978-12-08 | Hitachi Ltd | Information recording material |
JPS5454606A (en) * | 1977-10-11 | 1979-05-01 | Canon Inc | Recording medium |
JPS5522961A (en) * | 1978-08-07 | 1980-02-19 | Fuji Photo Film Co Ltd | Thermal recording material |
-
1979
- 1979-07-03 JP JP8422379A patent/JPS568294A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS568294A (en) | 1981-01-28 |
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