JPS5855292A - Laser recording medium - Google Patents

Laser recording medium

Info

Publication number
JPS5855292A
JPS5855292A JP56154099A JP15409981A JPS5855292A JP S5855292 A JPS5855292 A JP S5855292A JP 56154099 A JP56154099 A JP 56154099A JP 15409981 A JP15409981 A JP 15409981A JP S5855292 A JPS5855292 A JP S5855292A
Authority
JP
Japan
Prior art keywords
recording
recording medium
oxide film
absorption layer
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56154099A
Other languages
Japanese (ja)
Inventor
Yoshihiro Asano
浅野　義曠
Hironori Yamazaki
裕基 山崎
Akira Morinaka
森中　彰
Bunjiro Tsujiyama
辻山　文治郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56154099A priority Critical patent/JPS5855292A/en
Publication of JPS5855292A publication Critical patent/JPS5855292A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G11B7/2535—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polyesters, e.g. PET, PETG or PEN
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
    • G11B7/2536—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polystyrene [PS]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

PURPOSE:To obtain a laser recording medium having a high sensitivity and a high contrast and capable of high-speed recording by low output of a semiconductor laser by providing an oxide film on the back side of a laser absorption layer. CONSTITUTION:A 200Angstrom or less thick oxide film (e.g., of SiO, TaO2, Bi2O5, etc.) is formed by a vapor deposition method, etc. on a base plate 1 (e.g., of acryl (PMMA), polystyrene, polyethylene terephthalate, etc.). Then, a lasers absorption layer 3 (e.g., of Te, Bi, etc.) of a thickness of 300Angstrom , for example, is formed on the oxide film by a vapor deposition method to obtain an objective recording medium. By irradiation of laser beames 4 onto the recording medium, the laser absorption layer 3 is melted and vaporized to form holes.

Description

【発明の詳細な説明】 本発明は集光したレーデ光の熱作用によシ、その照射部
を融解・蒸発することによ多情報の記録を行なうに適し
たレーデ記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a Rade recording medium suitable for recording a large amount of information by melting and evaporating the irradiated area by the thermal action of focused Rade light.

一般に、レーデ光の熱的効果を利用した記録は、高密度
・大容量記録が可能なこと、現像処理が不要なため実時
間記録・即′再生ができること、追加記録が可能なこと
、高コントラストの記録が可能なことなどの利点を有す
る。従うて、大容ｌファイルメ七りとしての利用が検討
されている。しかし、記録装置の小型化、安定化、低価
格化を計るためには、記録再生光源として半導体レーデ
を用いる必要がある。この半導体レーデの出力はガスレ
ーデなどと比較すると低いため、高速で記録するために
は記録媒体としても高感度な媒体が要求される。In general, recording using the thermal effect of Rede light is capable of high-density and large-capacity recording, does not require development processing, allowing real-time recording and immediate playback, enables additional recording, and has high contrast. It has advantages such as being able to record. Accordingly, its use as a large-capacity l-file medium is being considered. However, in order to reduce the size, stability, and cost of recording devices, it is necessary to use a semiconductor radar as a recording/reproducing light source. Since the output of this semiconductor radar is lower than that of a gas radar, a highly sensitive recording medium is required in order to record at high speed.

従来、このような記録に用いる媒体としてはＲｈ、　Ｂ
ｌ、　Ｔ・などの金属薄膜、Ａｍ、Ｔ曝＋　８＠などか
らなるカルコグナイトガラス薄膜、フルオレセインなど
の色素薄膜が知られている。これらはレーデ光を吸収し
て昇温し、融解・蒸発によシ薄膜に孔をあけ情報を記録
する媒体である。Conventionally, the media used for such recording are Rh, B
Metal thin films such as 1, T, etc., chalcognitite glass thin films made of Am, T-exposed +8@, etc., and pigment thin films such as fluorescein are known. These media absorb Rede light, heat up, melt and evaporate, and create holes in the thin film to record information.

そしてζ記録感度を向上させるため、熱伝導率の小さい
ｆ２スチ、りを基板として用いたシあるいは記録層と基
板との間に断熱層として用いることによｐ熱の基板側へ
の流出を防ぐ構成がとられている。しかし、２０　ｍＷ
以下の半導体レーデで高速記録を行なうには感度が不十
分である。また、記録層を薄くシ、融解・蒸発部分の熱
容量を小さくすることによシ感度の向上が計られるが、
記録層が薄くなると再生時のコントラストが低下し、ま
九金属薄膜では表面酸化が膜内部に達しやす〈記録媒体
の寿命を短くする欠点がある。In order to improve the recording sensitivity, f2 steel, which has low thermal conductivity, is used as the substrate, or by using it as a heat insulating layer between the recording layer and the substrate, preventing the leakage of p-heat to the substrate side. The structure is taken. However, 20 mW
The following semiconductor radars have insufficient sensitivity for high-speed recording. Sensitivity can also be improved by making the recording layer thinner and reducing the heat capacity of the melting and evaporating parts.
When the recording layer becomes thinner, the contrast during reproduction decreases, and in metal thin films, surface oxidation tends to reach the inside of the film (this has the disadvantage of shortening the life of the recording medium).

本発明は低出力の半導体レーデを用いて高速記録が可能
な高感度を有し、かつコントラストの高いレーデ記録媒
体を提供することを目的とし、記録層の背後に極めて薄
い酸化物膜を設けることを特甲としている。The purpose of the present invention is to provide a radar recording medium with high sensitivity and high contrast that enables high-speed recording using a low-output semiconductor radar, and by providing an extremely thin oxide film behind the recording layer. is regarded as special armor.

以下図面に基づいて本発明の詳細な説明する。The present invention will be described in detail below based on the drawings.

第１図は本発明記録媒体の一例を示す図であって、１は
透光性を有する！ラスチアり基板、２は酸化物膜、３は
レーデ光吸収層である。４は記録・再生用レーデ光であ
シ、基板越しに集光可能な集光レンズによ〕吸収層上で
約１μｍ径のス／、トに絞シ込まれる。FIG. 1 is a diagram showing an example of the recording medium of the present invention, and 1 has translucency! A rusted substrate, 2 an oxide film, and 3 a Rede light absorption layer. Reference numeral 4 is a recording/reproducing radar beam, which is focused on the absorption layer into a beam with a diameter of about 1 μm by a condensing lens capable of condensing the beam through the substrate.

基板１としてはアクリｋ　−（ＰＭＭＡ）　、／リスチ
レン、ぼりエチレンテレフタレート、Ｉリカー−ネート
などの板を用いることができ、酸化物膜２としてはＳｔ
Ｏ，〒＊０２＊　ｉｔ、ｏ３．　ＣａＯ−８１０２など
の蒸着膜を２００１以下の膜厚で用いることができる。As the substrate 1, a plate made of acrylate (PMMA), /listyrene, ethylene terephthalate, I-licarnate, etc. can be used, and as the oxide film 2, a plate made of St.
O, 〒*02* it, o3. A deposited film such as CaO-8102 can be used with a film thickness of 2001 nm or less.

レーデ光吸収層３としてはＴ・、　ＢＩなどの金属薄膜
、あるいはムｍ、Ｔ・などからなるカルコダンガラス薄
膜、あるいはＴ・、　Ｂｉなどの金属を含有させ九二硫
化炭素！ラズマ重合膜を用いることができる。The Rede light absorbing layer 3 may be a metal thin film such as T. or BI, or a chalcodan glass thin film consisting of Mumm, T., etc., or carbon 9 disulfide containing a metal such as T. or Bi. A lasma polymerized membrane can be used.

この媒体に記録用レーデ光４を照射すると吸収層３が融
解・蒸発し孔が形成される。孔の形成される過程は複雑
でちゃ、不明な点も多いが吸収層３と基板１との界面状
態が孔形成に影響を与えると考えられる。このことは、
例えばＪ、Ｖａ＠、８ｃ１．Ｔ＠ｅｈｎｏ１．＋１８（
１）　ＩＰ、６８＊（１９８１）の文献に記載されてい
る。つｔｂ、吸収層３が融解したのみでは孔は形成され
ず、この融解した部分が基板１から切シ離される必要が
ある。When this medium is irradiated with a recording radar beam 4, the absorption layer 3 melts and evaporates, forming holes. Although the process of forming pores is complicated and there are many unknown points, it is thought that the state of the interface between the absorption layer 3 and the substrate 1 influences the formation of pores. This means that
For example, J, Va@, 8c1. T@ehno1. +18(
1) Described in the document IP, 68* (1981). However, holes are not formed simply by melting the absorbing layer 3, and the melted portion needs to be separated from the substrate 1.

吸収層Ｓと基板１との界面に酸化物膜２を設けることに
よシ、吸、収層３の融解した部分に働く界面応力の大き
さが変化し、融解部分は周辺に引張られ、孔の周辺に盛
シ上がシとして残留し孔が形成されやすくなる。従って
、酸化物膜２を設けることによシ１．酸化物膜２がな込
場合より記録感度が向上する。By providing the oxide film 2 at the interface between the absorption layer S and the substrate 1, the magnitude of the interfacial stress acting on the melted portion of the absorption layer 3 changes, and the melted portion is pulled toward the periphery and the pores are closed. The embossment remains as a ridge around the area, and holes are likely to be formed. Therefore, by providing the oxide film 2, 1. Recording sensitivity is improved compared to when the oxide film 2 is rounded.

なお、酸化物膜２は厚くすると吸収層３に発生し九熱が
基板１側に流出し、感度が低下するため２００Ｘ以下で
用いる必要がある。Note that if the oxide film 2 is made thicker, the nine heat generated in the absorption layer 3 will flow out to the substrate 1 side, resulting in a decrease in sensitivity, so it must be used at 200X or less.

第２図は本発明の他の一例を示す図で、５はノラスチ、
り膜、ｆツズマ重合膜、有機蒸着膜など低熱伝導率の材
料からなる断熱層である。FIG. 2 is a diagram showing another example of the present invention, in which 5 indicates Noraschi;
This is a heat insulating layer made of a material with low thermal conductivity, such as a carbon fiber film, an f-Tuzma polymer film, or an organic vapor-deposited film.

この場合も、第１図の場合と同様に酸化物膜２の効果に
よシ孔が形成されやすくなる。In this case as well, holes are likely to be formed due to the effect of the oxide film 2, as in the case of FIG.

以下実施例を中心に述べる。Examples will be mainly described below.

（実施例１） アクーリル基板上にＳ量Ｏを５０Ｘ蒸着し、この上に３
００芙のＴ・を蒸着した。この媒体を波長８３０　ｎｍ
ＯＧｍＡｍ半導体レーデで書き込み、読み出しを行なっ
た結果を第３図に示す。媒体上のレーデ／臂ワ６　ｍＷ
　、ビーム径り、Ｓ　ｔｓｒｔ＊　Ｘ　１．６　Ｊｌｍ
で書き込み、０．６ｍＷのレーデパワで読み出した。(Example 1) S amount O was evaporated at 50X on an acrylic substrate, and 3
T.00 was deposited. This medium has a wavelength of 830 nm.
FIG. 3 shows the results of writing and reading with the OGmAm semiconductor radar. Rede/Archive on Media 6 mW
, beam diameter, S tsrt* X 1.6 Jlm
It was written with a power of 0.6 mW and read with a radar power of 0.6 mW.

第３図の横軸は半導体レーデのノ臂ルス巾を、縦軸は再
生信号出力（記録前後の反射光強度Ｒ＠。In Fig. 3, the horizontal axis represents the arm width of the semiconductor radar, and the vertical axis represents the reproduction signal output (reflected light intensity R@ before and after recording).

８の差）を表わしている０図中、曲１１ａはｓｉ。In the diagram 0, which represents the difference of 8, song 11a is si.

膜を設けた場合、曲線すは８１０膜がない場合の特性を
示す０曲線ａでは記録閾値が低くなるとともにレーデ１
４ルス巾の増加に伴なう信号出力の増加が急峻である。When a film is provided, the curve 810 shows the characteristics when there is no film, and the recording threshold becomes low and the radar 1
4. The signal output increases sharply as the pulse width increases.

従うて、高速で書き込みができるとともに、読み出し時
のレーザーダヮも高くできるため再生時のコントラスも
高くすることができ丸。Therefore, in addition to being able to write at high speed, the laser beam during reading can also be made high, making it possible to increase the contrast during playback.

（実施例２） 実施例１　Ｏ８１０Ｏ代わ’）　Ｋ　５０１　ＯＴ＠０
２蒸着膜を用いた。　ＳｔＯの場合と比較すると記録閾
値はわずかに増えたが曲線の立上）は急峻であった。(Example 2) Example 1 O810O replacement') K 501 OT@0
2 vapor-deposited films were used. Compared to the case of StO, the recording threshold increased slightly, but the rise of the curve was steeper.

（実施例３） 実施例１の８１０の代わシにＣｍ０−８１０ｚを５０Ｘ
蒸着した。ＳｔＯと同様の記録特性が得られた。(Example 3) Cm0-810z was used at 50X instead of 810 in Example 1.
Deposited. Recording characteristics similar to those of StO were obtained.

（実施例４） ガラス基板上に二硫化炭素プラズマ重合膜を０、２　ｐ
ｕｓ重合し、その上に８１０を５０１蒸着し、さらに丁
・を２００芙蒸着した。実施例１と同じ条件で記録特性
を測定した結′果を第４図に示す。(Example 4) Carbon disulfide plasma polymerized film was deposited on a glass substrate at 0, 2p
After polymerization, 501 layers of 810 were deposited thereon, and 200 layers of 810 were further deposited. The recording characteristics were measured under the same conditions as in Example 1, and the results are shown in FIG.

曲線Ｃは８１０膜がある場合、曲ａｄＦｉ引０膜がない
場合である。１１１０　＠がある場合に記録閾値の低下
が観られる。ま九、Ｔ・膜厚を増加させた場合、８１０
　ｇがないと記録閾値が大巾に増加するのに対し、８１
０膜があるとＴ＠膜厚４００１ｆｉで閾値はほとんど変
化しなかった。Ｔｅ膜厚が増すと信号出力は大きくなる
ため高コント２ストの再生が可能でＴｏ−）た。Curve C is the case when there is an 810 film and when there is no curved adFi 0 film. When there is 1110@, a decrease in the recording threshold is observed. 9. If T/film thickness is increased, 810
While the recording threshold increases significantly without g, 81
When there was a 0 film, the threshold value hardly changed at T@film thickness of 4001fi. As the Te film thickness increases, the signal output increases, making high contrast reproduction possible.

（実施例５） 実施例４０Ｔ＠膜の代わ）にム−１゜丁・９゜を３００
又蒸着した。！Ｊ施例４と同じ記録特性が得られた。(Example 5) Example 40T@instead of membrane) was adjusted to 300°
It was also vapor deposited. ! The same recording characteristics as in Example J were obtained.

（実施例６） 実施例４０Ｔ・膜の代わシにＴ・含有二硫化炭素グッズ
マ重合膜を３００膜重合した。Ｔ・含有量は９０マｏ１
幅とした。記録特性は実施例４と同様であう丸。(Example 6) In place of the Example 40T membrane, 300 T-containing carbon disulfide goods polymer membranes were polymerized. T・Content is 90 mao1
Width. The recording characteristics are the same as those of Example 4, as indicated by the circles.

（実施例７） 実施例４のＴ・膜の代わ）にＢ１を２００１蒸増加した
が記録特性曲線の立上シが急峻であシ、高コントラスト
の再生が可能であった。(Example 7) Although B1 was increased by 2001 points (instead of the T film in Example 4), the rise of the recording characteristic curve was steep, and high contrast reproduction was possible.

（実施例８） 実施例６の媒体を３００−の直径のディスク上に作製し
丸。このディスクを１８０　Ｏｒ、ｐ、ｍで回転し、媒
体上ノ臂ワー６　ｍＷ　、ビーム径１．６＊ｍｘ１．６
μｍの半導体レーデで記録を行なった。レーデノ譬ワ１
　ｍＷで読み出しを行なったところディスクの内周、外
周と４再生信号出力の雑音化は４０４８以上であう九。(Example 8) The medium of Example 6 was prepared on a 300-diameter disk. This disk was rotated at 180 Or, p, m, the arm power on the medium was 6 mW, and the beam diameter was 1.6*m x 1.6.
Recording was performed with a μm semiconductor radar. Leden parable 1
When reading was performed at mW, the noise level of the inner and outer circumferences of the disk and the output of the four reproduced signals was 4048 or more.9.

以上説明したように、酸化物膜をレーデ光吸収層の背後
に設けることによシ記録閾値が低く、しかも鋭い記録閾
値を有する媒体が得られる。As explained above, by providing an oxide film behind the Radhe light absorption layer, a medium having a low recording threshold and a sharp recording threshold can be obtained.

酸化物膜の効果は吸収層の融解部分を孔の周辺に押しヤ
シ孔を形成しやすくすることで感度向上に寄与する。そ
して酸化物膜の膜厚は２００芙以下と極めて薄く、とく
に５０Ｘ程度のときは膜が島状になると考えられ基板側
への熱の流出には影響を与えない、を九、孔を形成しや
すくする動量１は吸収層が厚くなった場合も顕著に生じ
るため高コントラストの記録ができる。The effect of the oxide film is to push the melted portion of the absorption layer around the pores, making it easier to form palm pores, thereby contributing to improved sensitivity. The thickness of the oxide film is extremely thin, less than 200mm, and especially when it is about 50x, the film is considered to be island-like and does not affect the flow of heat to the substrate side.9) Holes are formed. The amount of movement 1 that facilitates recording occurs significantly even when the absorbing layer becomes thick, so that recording with high contrast can be achieved.

従って、半導体レーデにょ）高速で高コントラストの記
録が可能な媒体が得られるという利点がある。Therefore, there is an advantage that a medium capable of high-speed, high-contrast recording (semiconductor radar) can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明レーデ記録媒体の一例を示す断面拡大図
、第２図線本発明レーデ記録媒体の他の一例を示す断面
拡大図、第３図、第４図はそれぞれ本発明レーデ記録媒
体の記録特性例を示す曲線図である。 １・・・基板、２・−酸化物膜、Ｓ・・・レーデ光吸収
層、４・・・記録・再生用レーデ光、５用断熱層。FIG. 1 is an enlarged cross-sectional view showing an example of the Rede recording medium of the present invention, FIG. 2 is an enlarged cross-sectional view showing another example of the Rede recording medium of the present invention, and FIGS. 3 and 4 are respectively the Rede recording medium of the present invention. FIG. 3 is a curve diagram showing an example of recording characteristics. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Oxide film, S... Rade light absorption layer, 4... Rade light for recording/reproduction, 5 heat insulation layer.

Claims (1)

【特許請求の範囲】[Claims] レーデ光を照射し、その照射部分を融解変形または蒸発
させるととによって記録するレーデ記録媒体において、
レーデ光を吸収する吸収層の背後に酸化物膜を設けるこ
とを特徴とするレーデ記録媒体。In a Rade recording medium that records by irradiating Rade light and melting and deforming or evaporating the irradiated part,
A Radeh recording medium characterized in that an oxide film is provided behind an absorption layer that absorbs Radeh light.
JP56154099A 1981-09-29 1981-09-29 Laser recording medium Pending JPS5855292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56154099A JPS5855292A (en) 1981-09-29 1981-09-29 Laser recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56154099A JPS5855292A (en) 1981-09-29 1981-09-29 Laser recording medium

Publications (1)

Publication Number Publication Date
JPS5855292A true JPS5855292A (en) 1983-04-01

Family

ID=15576888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56154099A Pending JPS5855292A (en) 1981-09-29 1981-09-29 Laser recording medium

Country Status (1)

Country Link
JP (1) JPS5855292A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038745A (en) * 1983-08-09 1985-02-28 Nec Corp Optical recording medium and optical recording and reproducing method
JPS6045955A (en) * 1983-06-02 1985-03-12 オプチカル・ストラヘ・インテルナチオナル　ホランド Optical recording element
US5244770A (en) * 1991-10-23 1993-09-14 Eastman Kodak Company Donor element for laser color transfer
CN108415107A (en) * 2018-03-07 2018-08-17 上海道助电子科技有限公司 A kind of anti-reflection film making technology on composite board surface

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146221A (en) * 1976-05-31 1977-12-05 Asahi Chemical Ind Image forming material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146221A (en) * 1976-05-31 1977-12-05 Asahi Chemical Ind Image forming material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045955A (en) * 1983-06-02 1985-03-12 オプチカル・ストラヘ・インテルナチオナル　ホランド Optical recording element
JPS6038745A (en) * 1983-08-09 1985-02-28 Nec Corp Optical recording medium and optical recording and reproducing method
US5244770A (en) * 1991-10-23 1993-09-14 Eastman Kodak Company Donor element for laser color transfer
CN108415107A (en) * 2018-03-07 2018-08-17 上海道助电子科技有限公司 A kind of anti-reflection film making technology on composite board surface
CN108415107B (en) * 2018-03-07 2020-07-14 上海道助电子科技有限公司 Process for manufacturing surface antireflection film of plate containing polymethyl methacrylate

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