JPH01320738A - Color picture tube - Google Patents
Color picture tubeInfo
- Publication number
- JPH01320738A JPH01320738A JP15327588A JP15327588A JPH01320738A JP H01320738 A JPH01320738 A JP H01320738A JP 15327588 A JP15327588 A JP 15327588A JP 15327588 A JP15327588 A JP 15327588A JP H01320738 A JPH01320738 A JP H01320738A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- diameter opening
- small diameter
- center
- long side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000010894 electron beam technology Methods 0.000 abstract description 29
- 238000005530 etching Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 235000011511 Diospyros Nutrition 0.000 description 2
- 244000236655 Diospyros kaki Species 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Landscapes
- Electrodes For Cathode-Ray Tubes (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、多数のスロットを有する角型シャドウマスク
を色選別手段とするカラー受像管にかかり、シャドウマ
スクの電子ビーム透過率を高めて効率の改善を図るとと
もに、局部ドーミングの発生を防止したものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a color picture tube that uses a rectangular shadow mask having a large number of slots as a color selection means, and improves efficiency by increasing the electron beam transmittance of the shadow mask. This aims to prevent local doming from occurring.
従来の技術
一般に、多数のスロットを有する角型シャドウマスク〈
以下単にマスクという）は、第９図およびそのＡ−Ａ断
面の第１０図に示すように構成されており、各スロット
はマスク長辺方向（Ｘ方向）に略平行な短径方向軸と、
マスク短辺方向（Ｘ方向）に略平行な長径方向軸とを有
する長円形ないし矩形状に形成されている。すなわち、
電子銃側の面に長円形の径小開口部１を有し、蛍光体ス
クリーン側に矩形状の径大開口部２を有している。かか
るスロットのＸ方向配列間にはブリッジ部３があり、径
小開口部１と径大開口部２との間には傾斜した側壁部４
がある。そして、側壁部４の径小開口部側の端縁４０は
ナイフェツジとなされている。Conventional technology In general, a rectangular shadow mask with a large number of slots is used.
The mask (hereinafter simply referred to as a mask) is configured as shown in FIG. 9 and its A-A cross section in FIG.
It is formed into an elliptical or rectangular shape having a long axis direction substantially parallel to the short side direction (X direction) of the mask. That is,
It has an oval small-diameter opening 1 on the electron gun side, and a rectangular large-diameter opening 2 on the phosphor screen side. A bridge portion 3 is provided between the X-direction arrangement of the slots, and an inclined side wall portion 4 is provided between the small diameter opening 1 and the large diameter opening 2.
There is. The end edge 40 of the side wall portion 4 on the side of the small diameter opening is formed into a knife edge.
側壁部４の二つの長辺部分のうち、電子銃から放射され
た電子ビーム５に沿う側の長辺部分、すなわち、マスク
中心を通るマスク短辺方向″軸から遠い方の長辺部分を
外側テーパ部分、４１、他方の長辺部分を内側テーパ部
分４２と呼称すると、外側テーパ部分４１の傾斜角φ０
は、特開昭５９−８６１３５号公報等に開示されている
ように、電子ビーム５の入射角θ０よりも大きくなるよ
うに形成されている。なお、かかるスロットはマスク素
材たる鋼板の表裏両面側からフォトエツチング加工を施
すことによって得られる。Of the two long sides of the side wall 4, the long side along the electron beam 5 emitted from the electron gun, that is, the long side that is farther from the mask short side direction'' axis passing through the center of the mask, is placed on the outside. When the tapered portion 41 and the other long side portion are referred to as the inner tapered portion 42, the inclination angle φ0 of the outer tapered portion 41 is
is formed to be larger than the incident angle θ0 of the electron beam 5, as disclosed in Japanese Patent Laid-Open No. 59-86135. Incidentally, such slots are obtained by photo-etching both the front and back sides of a steel plate that is a mask material.
ところで近年、カラー受像管が大型化し、フェース面お
よびマスクの偏平度合いが高められるに伴い、マスクに
局部ドーミングが起こりやす（なってきた。これは電流
密度の高い電子ビームがマスクに射突することによって
生じる熱変形であって、これを防止すべ（マスク素材た
る鋼板の板厚を従来の０．１５〜０．１８ｍｍから０．
２〜０．３順に増したり、熱伝導を良好にしたりしてい
る。However, in recent years, as color picture tubes have become larger and the face surface and mask have become more flat, local doming has become more likely to occur on the mask. This is caused by electron beams with high current density hitting the mask. Thermal deformation caused by this should be prevented.
It increases in the order of 2 to 0.3 and improves heat conduction.
しかし板厚を増すと、電子ビームの入射角θ０を確保す
るための傾斜角φ０をより太き（しなければならず、そ
うすると、径大開口部２および側壁部４の幅も太き（な
り、実質的な板厚が小さくなる。そのうえ、マスクの厚
肉化や大型化に伴ってマスク成形時のプレス圧が増すた
め、従来の薄肉マスクのように端縁４０をナイフェツジ
にしておくと、端縁４０に成形特破損を生じ、径小開口
部１が刃こぼれを生じたように不規則的に変形する。そ
してこのようなことになると、マスクの品位を低下させ
るのみならず、マスクを光学マスクとして露光形成され
る蛍光体スクリーンの品位も著しく低下することになる
。However, when the plate thickness is increased, the inclination angle φ0 must be made thicker to ensure the incident angle θ0 of the electron beam, and in this case, the width of the large-diameter opening 2 and the side wall portion 4 also becomes thicker. , the actual plate thickness becomes smaller.Furthermore, as the mask becomes thicker and larger, the press pressure during mask molding increases, so if the edge 40 is made knife-edge like a conventional thin-walled mask, Special molding damage occurs at the edge 40, and the small-diameter opening 1 is irregularly deformed, as if the blade is chipped.When this happens, it not only degrades the quality of the mask, but also damages the mask. The quality of the phosphor screen formed by exposure as an optical mask is also significantly degraded.
そこで、マスクのスロット形成時のエツチング条件を制
御し、第１１図に示すように径小開口部１側の端縁４３
．４４をステップ６が生じるように立ち上がらせ、同端
縁における肉厚を増して機械的強度を高めている。なお
、ブリッジ部３はマスクの曲面成形時に機械的強度を維
持させるためのもので、電子ビームの透過率を高めるた
めにはできるだけ小さい方がよい。安定にプレス成形す
るのに必要なブリッジ部幅は板厚の約１／２である。Therefore, by controlling the etching conditions when forming the slot in the mask, as shown in FIG.
．． 44 is raised so that step 6 occurs, and the wall thickness at the same end edge is increased to increase mechanical strength. Note that the bridge portion 3 is for maintaining mechanical strength during molding of the curved surface of the mask, and is preferably as small as possible in order to increase the transmittance of the electron beam. The width of the bridge portion required for stable press forming is approximately 1/2 of the plate thickness.
一方、マスクのＹ方向周辺領域に位置するスロットであ
っても、それに対する電子ビームの入射角はかなり太き
（なるので、Ｘ方向周辺領域に位置するスロットと同程
度の傾斜をブリッジ部に設けることが望ましい。しかし
、ビーム透過率の低下をきたすのでそのような傾斜は付
与できず、マスク周辺領域に位置すスロットは、第１２
図ないし第１４図に示すような形状に形成している。On the other hand, even if the slot is located in the peripheral region of the mask in the Y direction, the incident angle of the electron beam to it is quite large (this is why the bridge section is provided with the same slope as the slot located in the peripheral region in the X direction). However, such an inclination cannot be provided because it would reduce the beam transmittance, and the slots located in the peripheral area of the mask are
It is formed into a shape as shown in FIGS.
この場合、径小開口部１例の両端縁４３．４４によって
形成されるステップ６の高さが、第１４図に示すように
エツチング進行度の高い長辺中央でもっとも低くなり、
長辺の端部においてはブリッジ部３との関係から、板厚
の約１／２の位置まで立ち上がる。なお、ブリッジ部３
の外側テーパ部分３１は、内側テーパ部分３２よりも急
な傾斜面になっているので、電子ビームの透過率を高め
ることができる。In this case, the height of the step 6 formed by both end edges 43 and 44 of one example of the small diameter opening is lowest at the center of the long side where the etching progress is high, as shown in FIG.
At the end of the long side, it rises to a position of approximately 1/2 of the plate thickness due to the relationship with the bridge portion 3. In addition, the bridge part 3
Since the outer tapered portion 31 has a steeper slope than the inner tapered portion 32, the transmittance of the electron beam can be increased.
第１５図およびその断面形状を示す第１６図ないし第１
８図を参照すると、ステップ高さが低い長辺中央での端
縁４３を通過した電子ビーム５はカットされることな（
（第１７図）蛍光体スクリーンに向かうことができる。Figure 15 and Figures 16 to 1 showing its cross-sectional shape.
Referring to Figure 8, the electron beam 5 passing through the edge 43 at the center of the long side where the step height is low is not cut (
(FIG. 17) Can be directed to a phosphor screen.
しかし、ＡＩ Ａ１＋Ａ２−Ａ２の各断面では、第１
６図および第１８図に示すようにブリッジ部３の外側テ
ーパ部分３１が内側テーパ部分３２に比べて太き（、そ
の分、端縁４５，４６でのステップ高さが端縁４７．４
８でのステップ高さよりも低くなる。しかし、化学的な
エツチング法を適用したスロットの形成では、端縁４５
，４６，４７．４８の各ステップ高さが、ブリッジ部３
との関係で板厚の約１／２に相当する高さまで立ち上が
るので、端縁４５．４７によって電子ビーム５の一部分
がカットされることになる。このため、径小開口部１を
通過して蛍光体スクリーンに至った電子ビームにより生
成されるビームスポットの形状が、影となる部分５１．
５２の影響によって、マスク中心を通るマスク短辺方向
軸（Ｙ方向中心軸）から遠い方の長辺の端部でカットさ
れ、第１９図に示すような柿の種子形のビームスポット
７になる。However, in each cross section of AI A1+A2-A2, the first
As shown in FIGS. 6 and 18, the outer tapered portion 31 of the bridge portion 3 is thicker than the inner tapered portion 32 (so that the step height at the edges 45 and 46 is larger than the edge 47.4).
It will be lower than the step height at 8. However, when forming a slot using a chemical etching method, the edge 45
, 46, 47.48, the bridge part 3
Since it rises to a height corresponding to about 1/2 of the plate thickness, a part of the electron beam 5 is cut by the edge 45, 47. Therefore, the shape of the beam spot generated by the electron beam that has passed through the small-diameter aperture 1 and reached the phosphor screen is different from the shadow portion 51.
52, the beam spot 7 is cut at the end of the long side far from the mask short side direction axis (Y direction central axis) passing through the mask center, resulting in a persimmon seed-shaped beam spot 7 as shown in FIG. .
内側テーパ部分３２に比べて外側テーノく部分３１の傾
斜が大きいので、ビームスポット７が力・ソトされる部
分は、マスク中心を通るマスク長辺方向軸（Ｘ方向中心
軸）から遠い部分５３よりも、近い部分５４の方が大き
い。そして、ビームスポット７がこのように歪むと、本
来の電子ビームの中心軸７１に対して実効的な輝度中心
軸７２が△χだけＹ方向中心軸側へずれ込む。と（に板
厚０．２５ｍｍのマスクを用いた偏平度の高いフェイス
面を有する１１０°広角偏向型カラー受像管ともなると
、電子ビームのマスクへの入射角θ０が大きくなるので
、△χの量は優に３０μｍを越えてしまう。Since the inclination of the outer tapered portion 31 is larger than that of the inner tapered portion 32, the portion where the beam spot 7 is applied force and tension is farther from the portion 53 that is farther from the long side direction axis of the mask (center axis in the X direction) passing through the center of the mask. Also, the closer portion 54 is larger. When the beam spot 7 is distorted in this way, the effective brightness central axis 72 is shifted toward the central axis in the Y direction by Δχ with respect to the original central axis 71 of the electron beam. In the case of a 110° wide-angle deflection type color picture tube with a highly flat face using a mask with a plate thickness of 0.25 mm, the incident angle θ0 of the electron beam on the mask becomes large, so the amount of △χ easily exceeds 30 μm.
ブラックマトリックス方式のカラー受像管の場合、実効
的な輝度中心のずれによって蛍光体スクリーンに対する
実効的ビームランデイング位置が常にΔχだけＹ方向中
心軸側へすれ込むことになるので、Ｙ方向中心軸側への
ビームランディング裕度が、その反対方向へのビームラ
ンディング裕度に比べて小さくなる。しかも現実には、
第２０図に示す赤（Ｒ）、緑（Ｇ）、青（Ｂ）の各色蛍
光体ストライプの間隔（ピッチ）と、これに対応する赤
（Ｒ）、緑（Ｇ）、青（Ｂ）のビームスポットのピッチ
とが同一ではないので、ビームランディング位置が大き
くずれるとき、と（に局部ドーミングが生じたとき、Ｒ
，Ｇ、８３色の発光むらを生じ、色純度が著しく低下す
るのであって、このビームランディング裕度の減少分は
、実効的な輝度中心のずれ量△χに相当する。・発明が
解決しようとする課題
前述のように、偏平度の高いフェイス面を有するカラー
受像管におけるマスクには局部ドーミングが起こりやす
く、その対策としてマスクの板厚を増しているものの、
スロットの形成時に生じるステップが高（なり、ビーム
スポットの端部がカットされてビームランディング裕度
が減少するのである。In the case of a black matrix type color picture tube, the effective beam landing position with respect to the phosphor screen always slips toward the center axis in the Y direction by Δχ due to a shift in the effective brightness center. The beam landing latitude in the opposite direction is smaller than the beam landing latitude in the opposite direction. Moreover, in reality,
The spacing (pitch) of each color phosphor stripe of red (R), green (G), and blue (B) shown in Fig. 20 and the corresponding pitch of each color phosphor stripe of red (R), green (G), and blue (B) Since the pitch of the beam spot is not the same, when the beam landing position deviates greatly and when local doming occurs in (R
.・Problems to be solved by the invention As mentioned above, local doming is likely to occur in the mask of a color picture tube having a highly flat face, and as a countermeasure to this problem, the thickness of the mask has been increased.
The step that occurs when forming the slot becomes high, cutting the edge of the beam spot and reducing the beam landing margin.
したがって、本発明の目的とするところは前述のように
相反関係にあるマスクの厚肉化およびビームランディン
グ裕度の向上を両立させ得るカラー受像管を提供するこ
とにある。Therefore, an object of the present invention is to provide a color picture tube that can achieve both the above-mentioned contradictory effects of increasing the thickness of the mask and improving the beam landing margin.
鐸
柵題無を解決するための手段
本発明は、電子銃と蛍光体スクリーンとの間に、前記蛍
光体スクリーンに近接して配設された角形シャドウマス
クのスロットが、マスク長辺方向に略平行な短径方向軸
およびマスク短辺方向に略平行な長径方向軸を有して前
記電子銃例の面に径小開口部を、そして、前記蛍光体ス
クリーン側の面に径大開口部をそれぞれ有し、前記径小
開口部と前記径大開口部との間に傾斜した側壁部を有し
てなるカラー受像管において、前記径小開口部の二つの
長辺のうち、マスク中心を通るマスク短辺方向軸から遠
い方のものを、同長辺の中央部から少なくとも一つの端
部へいくに従って径小開口部径を広げる方向へ屈曲せし
める。Means for Solving the Problem with the Barrier The present invention provides that the slot of a rectangular shadow mask disposed between an electron gun and a phosphor screen in close proximity to the phosphor screen is approximately parallel to the long side of the mask. A small diameter opening is provided on the surface of the electron gun, and a large diameter opening is provided on the surface facing the phosphor screen, with a short axis parallel to the mask and a long axis substantially parallel to the short side direction of the mask. In a color picture tube having an inclined side wall between the small diameter opening and the large diameter opening, one of the two long sides of the small diameter opening passes through the center of the mask. The mask that is farther from the axis in the short side direction is bent in a direction that widens the diameter of the small diameter opening from the center of the long side toward at least one end.
作用
このように構成されたカラー受像管においては、マスク
のスロットのステップ部で電子ビームがカットされたと
しても、電子ビームをカットす＝ ９−
る側の径小開口部の径が拡大されているので、スロット
を通過した後の電子ビームがスロットの投影として蛍光
体スクリーンに到達することにより生成されるビームス
ポットの形状が、柿の種形に端部でカットされることが
な（なり、左右対称性の良好なビームスポットを得るこ
とができる。このため、ビームスポットの幾何学的中心
軸と、実効的な輝度中心軸とを合致させることができ、
ビームランディング裕度を高めることができる。In the color picture tube constructed in this way, even if the electron beam is cut by the step part of the slot of the mask, the diameter of the small-diameter opening on the side that cuts the electron beam is enlarged. Therefore, the shape of the beam spot generated when the electron beam passes through the slot and reaches the phosphor screen as a projection of the slot will not be cut at the end in the shape of a persimmon seed. A beam spot with good left-right symmetry can be obtained. Therefore, the geometric center axis of the beam spot can be matched with the effective brightness center axis,
Beam landing latitude can be increased.
実施例
つぎに、本発明を図示した実施例とともに詳しく説明す
る。Embodiments Next, the present invention will be explained in detail with reference to illustrated embodiments.
第１図は本発明の一実施例を示すもので、径小開口部１
のＹ方向中心軸から遠い方の長辺が、この長辺の中央部
から一つの端部へいくに従って径小開口部径を広げる方
向に屈曲している。第１図のＡ−Ａ断面を示す第２図を
参照するさ、端縁４３のステップ高さが比較的低いので
、径小開口部１の短径Ｗを通過する電子ビーム５は、カ
ットされることなく蛍光体スクリーンへ向かうことかで
きる。また、Ｂ−Ｂ断面を示す第３図を参照すると、径
小開口部１の短径がＷ＋ｄＷと、中央部の短径Ｗよりも
ｄＷだけ広がるので、径小開口部での拡大量と端縁４３
との関係は、ステップ高さをｔｓ。FIG. 1 shows an embodiment of the present invention, in which a small diameter opening 1
The long side farther from the center axis in the Y direction is bent in a direction that widens the diameter of the small opening as it goes from the center of the long side to one end. Referring to FIG. 2 showing the A-A cross section of FIG. 1, since the step height of the edge 43 is relatively low, the electron beam 5 passing through the short diameter W of the small diameter opening 1 is not cut. You can walk directly to the phosphor screen without having to worry about it. Also, referring to FIG. 3 showing the B-B cross section, the short axis of the small diameter opening 1 is W + dW, which is wider than the short axis W at the center by dW, so the amount of expansion in the small diameter opening and the end Rim 43
The relationship with ts is the step height.
電子ビーム５の入射角を００とするとき、ｄＷ＝ｔｓｔ
ａｎθｏ −−（１）となるよう、長辺端
部位置Ｂでの径小開口部９の短径を決めである。ここで
、長辺端部位置Ｂにおける端縁４７で電子ビームがカッ
トされたとしても、必要とする電子ビームの幅Ｗは確保
できるので、径小開口部を通過した電子ビームの蛍光面
スクリーンへの投影であるビームスポットの形状は、柿
の種形とならずに左右対称性の良好なものとなり、ビー
ムスポットの幾何学的中心軸と、実効的な輝度゛中心軸
とを合致させることができる。When the incident angle of the electron beam 5 is 00, dW=tst
The short axis of the small diameter opening 9 at the long side end position B is determined so that anθo --(1). Here, even if the electron beam is cut at the edge 47 at the long side end position B, the required width W of the electron beam can be secured, so that the electron beam that has passed through the small diameter aperture is directed to the phosphor screen. The shape of the beam spot, which is a projection of can.
２９インチ１１０°偏向型の、偏平度の高いフェイス面
を有するカラー受像管に、板厚０．２８ ｍｍのマスク
を組み込んだところ、電子ビームのマスクへの入射角（
Ｘ軸方向成分）がθｏ＝３４度となるとき、ｄＷ二〇、
０６ｍｍとすることによって、蛍光体スクリーン上で左
右対称性の良好なビームスポットが得られ、ビームラン
ディング裕度を向上せしめ得ることを確認した。When a mask with a plate thickness of 0.28 mm was installed in a 29-inch 110° deflection type color picture tube with a highly flat face, the incident angle of the electron beam on the mask (
When the X-axis direction component) is θo = 34 degrees, dW20,
It was confirmed that by setting the diameter to 0.06 mm, a beam spot with good left-right symmetry could be obtained on the phosphor screen, and the beam landing margin could be improved.
第５図および第６図は、従来のマスクにおけるＸ方向中
心軸近傍でのスロットと、これを通過した電子ビームに
よるビームスポットとを示したものである。そして、両
図に対比して描いた第７図および第８図は、本発明の他
の実施例を示すもので、板厚０．２８ｎｖｎのマスクを
使用している。電子ビームの入射角（Ｘ軸方向成分）が
２７度のとき、径小開口部の拡大された端部４７での短
径拡大量ｄＷを、ｄＷαＯ；０３ｎｗｎとしたとき、左
右対称性の良好なビームスポットが得られた。FIGS. 5 and 6 show a slot near the center axis in the X direction in a conventional mask and a beam spot of an electron beam passing through the slot. 7 and 8, which are drawn in comparison with these two figures, show another embodiment of the present invention, in which a mask with a plate thickness of 0.28 nvn is used. When the incident angle of the electron beam (X-axis direction component) is 27 degrees, and the short diameter expansion amount dW at the enlarged end 47 of the small diameter opening is dWαO; A beam spot was obtained.
なお、ｄＷの量は、マスクの曲率半径やステップ高さに
もよるが、板厚の１／２以下であれば十分である。Note that the amount of dW depends on the radius of curvature of the mask and the step height, but it is sufficient if it is 1/2 or less of the plate thickness.
発明の効果
本発明によると、偏平度の高い曲面を有する厚肉のマス
クを使用し、そのスロットを通過して蛍光体スクリーン
に到達した電子ビームによるビームスポットの形状を、
左右対称性の良好なものとなし得、実効的な輝度中心軸
と幾何学的中心軸とを合致させることができる。このた
め、ビームランディング裕度を高め得、かつ、局部ドー
ミング発生時のようなダイナミック特性においても色純
度の低下を抑制できる。さらに、マスクのスロット形状
によってビームスポットの形状を制御できるので、厚肉
マスクにおけるスロットをエツチングにより形成すると
き′、ブリッジ部に近い部分のテーパ一部を深くエツチ
ングする要がな（、エツチングを容易ならし得る利点も
ある。Effects of the Invention According to the present invention, a thick mask having a highly flat curved surface is used, and the shape of the beam spot created by the electron beam passing through the slot and reaching the phosphor screen is
Good left-right symmetry can be achieved, and the effective brightness central axis and geometrical central axis can be matched. Therefore, the beam landing margin can be increased, and a decrease in color purity can be suppressed even in dynamic characteristics such as when local doming occurs. Furthermore, since the shape of the beam spot can be controlled by the shape of the slot in the mask, when forming a slot in a thick mask by etching, there is no need to deeply etch the taper part near the bridge (this makes etching easier). There are also benefits that can be gained.
第１図は本発明を実施したカラー受像管に使用されるマ
スクの一部分を拡大した平面図、第２図は第１図のＡ−
Ａ断面図、第３図は同Ｂ＝Ｂ断面図、第４図は同Ｃ−Ｃ
断面・図、第５図は従来のマスクの一部分を拡大した平
面図、第６図は同マスクを使用したカラー受像管によっ
て得られるビームスポットの平面図、第７図は本発明の
他の実施例におけるマスクの一部分の平面図、第８図は
同一 １３＝
実施例のカラー受像管によって得られるビームスポット
の平面図、第９図は従来のマスクの一部分の斜視図、第
１０図は第９図のＡ−Ａ断面図、第１１図は従来のマス
クの一部分の斜視図、第１２面図、第１５図は従来のマ
スクの一部分の平面図、第１６図は第１５図のＡ、−Ａ
、断面図、第１７図は同Ｃ−Ｃ断面図、第１８図は同Ａ
２’−Ａ２断面図、第１９図は従来のカラー受像管によ
って得られるビームスポットの平面図、第２０図は同カ
ラー受像管の局部ドーミング時における蛍光面とビーム
スポットとの関係を示す図である。
１・・・・・・径小開口部、２・・・・・・径大開口部
、３・・・・・・ブリッジ部、４・・・・・・側壁部、
５・・・・・・電子ビーム、６・・・・・・ステップ。FIG. 1 is an enlarged plan view of a portion of a mask used in a color picture tube embodying the present invention, and FIG.
A sectional view, Fig. 3 is the same B=B sectional view, and Fig. 4 is the same C-C.
5 is an enlarged plan view of a part of a conventional mask, FIG. 6 is a plan view of a beam spot obtained by a color picture tube using the same mask, and FIG. 7 is another embodiment of the present invention. A plan view of a portion of the mask in the example, FIG. 8 is the same. 13= A plan view of the beam spot obtained by the color picture tube of the example, FIG. 9 is a perspective view of a portion of the conventional mask, and FIG. 11 is a perspective view of a portion of a conventional mask, a twelfth side view, FIG. 15 is a plan view of a portion of a conventional mask, and FIG. A
, a sectional view, FIG. 17 is a sectional view taken along line CC, and FIG. 18 is a sectional view taken along line A
2'-A2 sectional view, FIG. 19 is a plan view of a beam spot obtained by a conventional color picture tube, and FIG. 20 is a diagram showing the relationship between the fluorescent screen and the beam spot during local doming of the same color picture tube. be. 1... Small diameter opening, 2... Large diameter opening, 3... Bridge part, 4... Side wall part,
5...Electron beam, 6...Step.
Claims (1)
リーンに近接して配設された角形シャドウマスクのスロ
ットが、マスク長辺方向に略平行な短径方向軸およびマ
スク短辺方向に略平行な長径方向軸を有して前記電子銃
側の面に径小開口部を、そして、前記蛍光体スクリーン
側の面に径大開口部をそれぞれ有し、前記径小開口部と
前記径大開口部との間に傾斜した側壁部を有してなるカ
ラー受像管において、前記径小開口部の二つの長辺のう
ち、マスク中心を通るマスク短辺方向軸から遠い方のも
のが、同長辺の中央部から少なくとも一つの端部へいく
に従って径小開口部径を広げる方向に屈曲してなること
を特徴とするカラー受像管。A slot of a rectangular shadow mask disposed close to the phosphor screen between the electron gun and the phosphor screen has a minor diameter axis approximately parallel to the long side direction of the mask and approximately parallel to the short side direction of the mask. a long diameter axis, a small diameter opening on the surface facing the electron gun, and a large diameter opening on the surface facing the phosphor screen, the small diameter opening and the large diameter opening. In a color picture tube having an inclined side wall section between the two long sides of the small diameter opening, the one farther from the mask short side direction axis passing through the center of the mask has the same length. A color picture tube characterized in that the side is bent in a direction in which the diameter of the small diameter opening increases from the center of the side toward at least one end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153275A JP2633303B2 (en) | 1988-06-21 | 1988-06-21 | Color picture tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63153275A JP2633303B2 (en) | 1988-06-21 | 1988-06-21 | Color picture tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01320738A true JPH01320738A (en) | 1989-12-26 |
| JP2633303B2 JP2633303B2 (en) | 1997-07-23 |
Family
ID=15558903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63153275A Expired - Lifetime JP2633303B2 (en) | 1988-06-21 | 1988-06-21 | Color picture tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2633303B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0715331A2 (en) | 1990-11-22 | 1996-06-05 | Kabushiki Kaisha Toshiba | Negative plate used for manufacture of a shadow mask, and method for manufacturing the negative plate |
| WO2000045413A1 (en) * | 1999-01-26 | 2000-08-03 | Dai Nippon Printing Co., Ltd. | Shadow mask for crt |
| EP1117120A2 (en) * | 2000-01-13 | 2001-07-18 | Matsushita Electronics Corporation | Cathode ray tube |
| US6313574B1 (en) | 1998-07-16 | 2001-11-06 | Nec Corporation | Shadow mask with specifically shaped apertures |
| US6388370B1 (en) | 1999-07-15 | 2002-05-14 | Matsushita Electric Industrial Co., Ltd. | Cathode ray tube |
| US6577047B2 (en) | 1999-12-21 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Cathode ray tube |
| KR100505094B1 (en) * | 2002-05-29 | 2005-08-03 | 엘지.필립스 디스플레이 주식회사 | Structure of slot feature for shadow mask |
| EP1648015A2 (en) * | 2004-10-14 | 2006-04-19 | Dai Nippon Printing Co., Ltd. | Shadow mask |
| US7170220B2 (en) | 2004-10-15 | 2007-01-30 | Dai Nippon Printing Co., Ltd. | Shadow mask with slots having a front side opening with an inclined from side edge |
| US7301267B2 (en) | 2004-10-18 | 2007-11-27 | Dai Nippon Printing Co., Ltd. | Shadow mask having a slot structure that permits electron beams to enter at increased angles |
| US7459840B2 (en) | 2005-04-15 | 2008-12-02 | Samsung Sdi Co., Ltd. | Shadow mask for cathode ray tube (CRT) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61177353U (en) * | 1985-04-22 | 1986-11-05 | ||
| JPH01175148A (en) * | 1987-12-28 | 1989-07-11 | Toppan Printing Co Ltd | Shadow mask |
-
1988
- 1988-06-21 JP JP63153275A patent/JP2633303B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61177353U (en) * | 1985-04-22 | 1986-11-05 | ||
| JPH01175148A (en) * | 1987-12-28 | 1989-07-11 | Toppan Printing Co Ltd | Shadow mask |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0715331A2 (en) | 1990-11-22 | 1996-06-05 | Kabushiki Kaisha Toshiba | Negative plate used for manufacture of a shadow mask, and method for manufacturing the negative plate |
| US6313574B1 (en) | 1998-07-16 | 2001-11-06 | Nec Corporation | Shadow mask with specifically shaped apertures |
| NL1012471C2 (en) * | 1998-07-16 | 2002-05-14 | Nec Corp | Color cathode ray tube. |
| KR100348509B1 (en) * | 1998-07-16 | 2002-08-13 | 닛폰 덴키(주) | Color Cathode-Ray Tube |
| WO2000045413A1 (en) * | 1999-01-26 | 2000-08-03 | Dai Nippon Printing Co., Ltd. | Shadow mask for crt |
| US6803710B1 (en) | 1999-01-26 | 2004-10-12 | Dai Nippon Printing Co., Ltd. | Shadow mask with curved and rectangular slots |
| US6388370B1 (en) | 1999-07-15 | 2002-05-14 | Matsushita Electric Industrial Co., Ltd. | Cathode ray tube |
| US6577047B2 (en) | 1999-12-21 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Cathode ray tube |
| US6566795B2 (en) | 2000-01-13 | 2003-05-20 | Matsushita Electric Industrial Co., Ltd. | Cathode ray tube having apertured shadow mask |
| EP1117120A2 (en) * | 2000-01-13 | 2001-07-18 | Matsushita Electronics Corporation | Cathode ray tube |
| EP1117120B1 (en) * | 2000-01-13 | 2008-02-27 | Matsushita Electric Industrial Co., Ltd. | Cathode ray tube |
| KR100505094B1 (en) * | 2002-05-29 | 2005-08-03 | 엘지.필립스 디스플레이 주식회사 | Structure of slot feature for shadow mask |
| EP1648015A2 (en) * | 2004-10-14 | 2006-04-19 | Dai Nippon Printing Co., Ltd. | Shadow mask |
| EP1648015A3 (en) * | 2004-10-14 | 2008-04-23 | Dai Nippon Printing Co., Ltd. | Shadow mask |
| US7170220B2 (en) | 2004-10-15 | 2007-01-30 | Dai Nippon Printing Co., Ltd. | Shadow mask with slots having a front side opening with an inclined from side edge |
| US7301267B2 (en) | 2004-10-18 | 2007-11-27 | Dai Nippon Printing Co., Ltd. | Shadow mask having a slot structure that permits electron beams to enter at increased angles |
| US7459840B2 (en) | 2005-04-15 | 2008-12-02 | Samsung Sdi Co., Ltd. | Shadow mask for cathode ray tube (CRT) |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2633303B2 (en) | 1997-07-23 |
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