JPH01175148A - Shadow mask - Google Patents

Shadow mask

Info

Publication number
JPH01175148A
JPH01175148A JP33219387A JP33219387A JPH01175148A JP H01175148 A JPH01175148 A JP H01175148A JP 33219387 A JP33219387 A JP 33219387A JP 33219387 A JP33219387 A JP 33219387A JP H01175148 A JPH01175148 A JP H01175148A
Authority
JP
Japan
Prior art keywords
shadow mask
shape
large hole
electron beam
long sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33219387A
Other languages
Japanese (ja)
Inventor
Kazuo Shirakawa
白川 和男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP33219387A priority Critical patent/JPH01175148A/en
Publication of JPH01175148A publication Critical patent/JPH01175148A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To eliminate distortion and obtain a good-quality screen by forming the opening shape on the large hole side located on the display side of each hole into a shape protruded arc-wise outwardly for at least one or more end sections of long sides. CONSTITUTION:To prevent an electron beam with an angle from being cut off, the opening shape on the large hole side of a shadow mask is formed in a shape protruded arc-wise outwardly at both ends or one end of both long sides of a rectangle. A through hole having a large hole diameter and protruded arc-wise outwardly at both ends of both long sides is formed, with the thickness on the large hole side: 0.25mm, slot length L1: 700mm, main slot width S1: 0.19mm, large hole diameter R: 0.50mm, distance S'' to the top: 0.1mm, vertical distance L' of protruded section: 0.1mm. Many through holes are aligned at the vertical distance M1: 0.825mm and the horizontal distance M2: 0.95mm to obtain the shadow mask, and an electron beam shape shown in the figure can be obtained.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 CRT、カラーテレビ等の各種表示装置に用いられるシ
ャドウマスクに係る。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to shadow masks used in various display devices such as CRTs and color televisions.

〈従来の技術〉 従来の技術につき、簡単に説明する。<Conventional technology> The conventional technology will be briefly explained.

第4図は、従来の通常のシャドウマスクの部分平面図で
ある。また、第5図は、同A線による部分断面図であり
、第6図は、同B線にある部分断面図であり、第7図は
、同C線による部分断面図である。
FIG. 4 is a partial plan view of a conventional conventional shadow mask. 5 is a partial sectional view taken along line A, FIG. 6 is a partial sectional view taken along line B, and FIG. 7 is a partial sectional view taken along line C.

従来のシャドウマスクは、端部では肉厚が厚くなってい
る。この様なシャドウマスクにおいて電子ビームが斜行
して入ってくると、例え電子銃側に位置する小孔側から
入射しても、その肉厚が厚い部分で反射し、透過しない
Conventional shadow masks have thicker walls at the edges. If an electron beam enters obliquely in such a shadow mask, even if it enters from the small hole side located on the electron gun side, it will be reflected by the thick part and will not pass through.

従って、この様なシャドウマスクの特に外縁部に於ける
電子ビームの透過パターンは、第8図の様に、外側に向
かった端部に於いて欠けているパターンとなっている。
Therefore, the electron beam transmission pattern particularly at the outer edge of such a shadow mask is a pattern that is missing at the outer edge, as shown in FIG.

〈発明が解決しようとする問題点〉 上述の様なシャドウマスクにおいては、小孔側から入射
しても、その肉厚が厚い部分で反射し、透過しない。
<Problems to be Solved by the Invention> In the shadow mask as described above, even if light enters from the small hole side, it will be reflected by the thick portion and will not be transmitted.

従って、この様、なシャドウマスクの、特に外縁部に於
ける電子ビームの透過パターンは、外側に向かった端部
に於いて欠けているパターンとなっている。
Therefore, the electron beam transmission pattern of such a shadow mask, particularly at the outer edge, becomes a missing pattern at the outer edge.

従って、シャドウマスクの中央部と端部において相当程
度輝度が違っている。
Therefore, there is a considerable difference in brightness between the center and end portions of the shadow mask.

また、この輝度を補う為、第9図に示す様に、透孔の横
巾を広げる、ブリッヂ中を狭くする、透孔の矩形をより
矩形にする(レクタンギラー)、等の手段によってより
シャドウマスクの透過率上げることが行なわれいる、し
かしながら下記の理由によって採用は困難であったり、
実用上効果が無い。
In order to compensate for this brightness, as shown in Figure 9, the shadow mask can be improved by increasing the width of the hole, narrowing the middle of the bridge, making the rectangular shape of the hole more rectangular (rectangular shape), etc. However, due to the following reasons, it is difficult to adopt
It has no practical effect.

(1)透孔の横巾を広げると、蛍光スクリーン面を作成
時に、蛍光体を含む感光性樹脂を塗布したのち、ンヤド
ウマスクを介して露光現像し、次に現像して、赤、青、
緑の蛍光体パターンを形成して、蛍光スクリーンを作る
がこのとき透孔の横巾が広いと、その蛍光体の三種がだ
ぶった蛍光面スクリーンが形成されてしまう、又、だぶ
りまで行かなく、ギリギリに形成されたとしても、電子
ビームによって発光すべき蛍光体パターンと共にそれと
隣接する蛍光体パターンを発色させやすくなる。
(1) When the width of the through hole is widened, when creating the fluorescent screen surface, a photosensitive resin containing phosphor is applied, exposed and developed through a mask, and then developed.
A phosphor screen is made by forming a green phosphor pattern, but if the width of the through hole is wide, a phosphor screen will be formed in which the three types of phosphor overlap, or the phosphor screen will not overlap. Even if the phosphor pattern is formed just in time, the phosphor pattern to be emitted by the electron beam and the phosphor pattern adjacent thereto are likely to be colored.

(2)ブリッヂ中を狭くする法ではシャドウマスクの機
械的強度が低下し、シャドウマスクをプレス成形時に伸
びや変形を生じたり、電子ビームの照射により熱変形等
によって色ずれ等が発生しゃすくなる。
(2) The method of narrowing the bridge reduces the mechanical strength of the shadow mask, making it more likely that the shadow mask will stretch or deform during press molding, or cause color shift due to thermal deformation due to electron beam irradiation. .

(3)透孔の配列間隔(ピッチ)を細かくすると、(1
1と同じ透孔の横巾を広げたことと同じようなトラブル
が発生する。
(3) If the arrangement interval (pitch) of the through holes is made finer, (1
The same problem as in 1 will occur if the width of the through hole is widened.

(4)透孔より矩形にする法では、たしかに正面から見
た場合に透過率は高いが、カラーブラウン管の四隅部で
は電子ビームの照、射はある角度で照射されるため、大
孔側で電子ビームが一部透過せず第10図の様な電子ビ
ーム透過形状となる。
(4) In the method of making the hole rectangular, it is true that the transmittance is high when viewed from the front, but since the electron beam is irradiated at a certain angle at the four corners of the color cathode ray tube, the large hole side Part of the electron beam is not transmitted, resulting in an electron beam transmission shape as shown in FIG.

また、小孔側に長辺の端部の一つ以上を弧状に外方へ突
出させた形状のシャドウマスクが実開昭55−1387
57号公報で公知である。しかし、この公報p様に小孔
側に弧状突出部を設けても、上述の様な問題点は解決す
るものではない。
In addition, a shadow mask with one or more long sides protruding outward in an arc shape on the side of the small hole was developed in U.S. Pat. No. 55-1387.
It is publicly known from Publication No. 57. However, even if an arcuate protrusion is provided on the side of the small hole as in this publication, the above-mentioned problems cannot be solved.

〈問題を解決する為の手段〉 本発明は、角度をもった電子ビームが遮断されるのを防
止する為には、小孔側を変更するのは効果が薄く、大孔
側を変更するのが効果が大きいことを見い出し、発明し
たものである。つまり、シャドウマスクの大孔側の開口
形状を矩形の両長辺の両端又は片端を弧状に外方へ突出
させた形状としたものである。
<Means for Solving the Problem> In the present invention, in order to prevent an angled electron beam from being blocked, changing the small hole side is less effective, and changing the large hole side is less effective. It was discovered and invented that it is highly effective. That is, the shape of the opening on the large hole side of the shadow mask is a rectangular shape with both ends or one end of both long sides protruding outward in an arc shape.

この様なシャドウマスクは、蛍光体側の大孔部の開口形
状が矩形の両長辺の両端又はマスク中心より外側に向う
端を弧状に外方へ突出させた形状のものである。なお、
本発明による弧状とは、完全な円弧のみを示すものでは
なく、近位的に円弧に類似した曲線形状等をも含む。
In such a shadow mask, the opening shape of the large hole on the phosphor side is rectangular with both ends of both long sides or the end facing outward from the center of the mask protruding outward in an arc shape. In addition,
The arc shape according to the present invention does not mean only a complete circular arc, but also includes a curved shape that is proximally similar to a circular arc.

また、大孔部の主スロット巾SIに対して相対する突出
部の頂部までの距離S゛はSl>S’であり、かつ板厚
の1八ないし1倍とするのが望ましい。
Further, the distance S' from the top of the protruding portion opposite to the main slot width SI of the large hole portion satisfies Sl>S' and is desirably 18 to 1 times the plate thickness.

〈作用〉 本発明の様なシャドウマスクを用いると、小孔側から入
射した電子ビームがほとんど大孔側へ貫き、歪みの無い
形で、しかも開口率をあまり変える事をなくする事が出
来る。
<Function> When a shadow mask such as that of the present invention is used, most of the electron beam incident from the small hole side penetrates to the large hole side, and it is possible to do so without distortion and without changing the aperture ratio too much.

〈実施例〉 本発明の実施例を、詳細に述べる。第1図は、本実施例
の平面図である。金属薄板をエツチングにより、大孔側
が、板厚to、25mm 、スロント長L0゜700m
m主スロッ主スロツト巾190mm 、大孔径R0,5
00mmそれに相当する突出部の頂部までの距離S’0
.100mm、突出部のタテ方向の距離L’ 0.10
0+nmの矩形の両長辺の両端を弧状に外方へ突出させ
た形状の大孔径もった透孔であり、それが縦間隔M10
.825mm、横間隔MtO,’950mmで多数配列
されたシャドウマスクを得た。本実施例では、第2図の
様な電子ビーム形状を得る事が出来、この斜め方向によ
る透過率を測定した結果、従来品の垂直透過率で20.
9%、同品の23°の斜光角度での透過率で19.4%
、本例の23°の斜光角度での透過率で20.5%とい
う結果となった。
<Examples> Examples of the present invention will be described in detail. FIG. 1 is a plan view of this embodiment. By etching a thin metal plate, the large hole side has a plate thickness of 25 mm and a front length L0° of 700 m.
m Main slot Main slot width 190mm, large hole diameter R0,5
00mm, the corresponding distance to the top of the protrusion S'0
.. 100mm, vertical distance of protrusion L' 0.10
It is a through hole with a large diameter in the shape of a 0+nm rectangle with both long sides protruding outward in an arc shape, and it has a vertical spacing of M10.
.. A large number of shadow masks were obtained with a width of 825 mm and a horizontal interval MtO of 950 mm. In this example, an electron beam shape as shown in Fig. 2 can be obtained, and the transmittance in the oblique direction was measured, and the vertical transmittance of the conventional product was 20.
9%, the transmittance of the same product at an oblique light angle of 23° is 19.4%
In this example, the transmittance at an oblique light angle of 23° was 20.5%.

また、別の実施例を第3図で示すと、これはシャドウマ
スクの中央より外側に向かって端部にだけ上述と同じ値
の弧状の突出部があるものを用いたが、上側に近い特性
を得る事が出来た。
Another example is shown in FIG. 3. In this case, a shadow mask having arcuate protrusions having the same values as those described above only at the ends toward the outside from the center of the shadow mask was used. I was able to obtain

〈発明の効果〉 本発明の様なシャドウマスクを用いると、小孔側から入
射した電子ビームが、殆ど全て大孔側に透過する事とな
る。この結果、透過ビームパターンが表示として有利な
形状となって、歪みがなくなり、良質な画面が得られる
<Effects of the Invention> When a shadow mask such as that of the present invention is used, almost all of the electron beam incident from the small hole side is transmitted to the large hole side. As a result, the transmitted beam pattern has a shape that is advantageous for display, eliminates distortion, and provides a high-quality screen.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の一実施例を示す平面図、第2図は、
同電子ビーム透過形状、第3図は、別な実施例を示す平
面図である。第4図は、従来例を示す平面図、第5図は
、同A線による断面図、第6図は、同B線による断面図
、第7図は、同C線による断面図、第8図は、同電子ビ
ーム透過形状、第9図は、別の従来例を示す平面図、第
10図は、同電子ビーム透過形状である。 l・・・大孔側開口形状 2・・・小孔側開口形状 3・・・電子ビーム透過形状 第2図 第3図 佃9 第4図 第5図 第6図 第7図 第8図  第9図 第10図
FIG. 1 is a plan view showing an embodiment of the present invention, and FIG. 2 is a plan view showing an embodiment of the present invention.
FIG. 3 is a plan view showing another embodiment of the electron beam transmission shape. 4 is a plan view showing the conventional example, FIG. 5 is a cross-sectional view taken along line A, FIG. 6 is a cross-sectional view taken along line B, FIG. 7 is a cross-sectional view taken along line C, and FIG. The figure shows the same electron beam transmission shape, FIG. 9 is a plan view showing another conventional example, and FIG. 10 shows the same electron beam transmission shape. l...Large hole side opening shape 2...Small hole side opening shape 3...Electron beam transmission shape Figure 2 Figure 3 Tsukuda 9 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10

Claims (1)

【特許請求の範囲】 1)各孔の表示側に位置する大孔側の開口形状が、少な
くとも長辺の端部の一つ以上を弧状に外方へ突出させた
形状であるシャドウマスク。 2)両方の長辺の両方の端部に弧状の突出がある事を特
徴とする特許請求の範囲第1項記載のシャドウマスク。 3)シャドウマスクの中央より外側に向かった端部に弧
状の突出がある事を特徴とする特許請求の範囲第1項記
載のシャドウマスク。
[Scope of Claims] 1) A shadow mask in which the opening shape of the large hole located on the display side of each hole is such that at least one or more of the long sides thereof protrudes outward in an arc shape. 2) The shadow mask according to claim 1, characterized in that there are arcuate protrusions at both ends of both long sides. 3) The shadow mask according to claim 1, characterized in that there is an arcuate protrusion at an end portion extending outward from the center of the shadow mask.
JP33219387A 1987-12-28 1987-12-28 Shadow mask Pending JPH01175148A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33219387A JPH01175148A (en) 1987-12-28 1987-12-28 Shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33219387A JPH01175148A (en) 1987-12-28 1987-12-28 Shadow mask

Publications (1)

Publication Number Publication Date
JPH01175148A true JPH01175148A (en) 1989-07-11

Family

ID=18252212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33219387A Pending JPH01175148A (en) 1987-12-28 1987-12-28 Shadow mask

Country Status (1)

Country Link
JP (1) JPH01175148A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01320738A (en) * 1988-06-21 1989-12-26 Matsushita Electron Corp Color picture tube
JPH04112741U (en) * 1991-03-20 1992-09-30 村田機械株式会社 Machine tool thermal displacement error reduction device
US5280215A (en) * 1990-11-22 1994-01-18 Kabushiki Kaisha Toshiba Shadow mask for color cathode ray tube
KR20030038251A (en) * 2001-11-10 2003-05-16 엘지.필립스디스플레이(주) Shadowmask for Color CRT
US7459840B2 (en) 2005-04-15 2008-12-02 Samsung Sdi Co., Ltd. Shadow mask for cathode ray tube (CRT)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376741A (en) * 1976-12-20 1978-07-07 Toshiba Corp Shadow mask its fabrication
US4518892A (en) * 1980-05-12 1985-05-21 Buckbee Mears Company Television picture tube with aperture mask having recesses therein

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376741A (en) * 1976-12-20 1978-07-07 Toshiba Corp Shadow mask its fabrication
US4518892A (en) * 1980-05-12 1985-05-21 Buckbee Mears Company Television picture tube with aperture mask having recesses therein

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01320738A (en) * 1988-06-21 1989-12-26 Matsushita Electron Corp Color picture tube
US5280215A (en) * 1990-11-22 1994-01-18 Kabushiki Kaisha Toshiba Shadow mask for color cathode ray tube
US5411822A (en) * 1990-11-22 1995-05-02 Kabushiki Kaisha Toshiba Shadow mask for color cathode ray tube, shadow mask printing negative plate used for manufacture of the shadow mask, and method and manufacturing the negative plate
EP0715331A2 (en) 1990-11-22 1996-06-05 Kabushiki Kaisha Toshiba Negative plate used for manufacture of a shadow mask, and method for manufacturing the negative plate
EP0715331A3 (en) * 1990-11-22 1997-05-28 Toshiba Kk Negative plate used for manufacture of a shadow mask, and method for manufacturing the negative plate
JPH04112741U (en) * 1991-03-20 1992-09-30 村田機械株式会社 Machine tool thermal displacement error reduction device
KR20030038251A (en) * 2001-11-10 2003-05-16 엘지.필립스디스플레이(주) Shadowmask for Color CRT
US7459840B2 (en) 2005-04-15 2008-12-02 Samsung Sdi Co., Ltd. Shadow mask for cathode ray tube (CRT)

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