JPH01320236A - Cover glass for solid-state image pickup element - Google Patents
Cover glass for solid-state image pickup elementInfo
- Publication number
- JPH01320236A JPH01320236A JP63154349A JP15434988A JPH01320236A JP H01320236 A JPH01320236 A JP H01320236A JP 63154349 A JP63154349 A JP 63154349A JP 15434988 A JP15434988 A JP 15434988A JP H01320236 A JPH01320236 A JP H01320236A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- solid
- state image
- cover glass
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006059 cover glass Substances 0.000 title claims abstract description 27
- 238000002834 transmittance Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 6
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 229910011255 B2O3 Inorganic materials 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 239000006185 dispersion Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- 229910052916 barium silicate Inorganic materials 0.000 description 2
- HMOQPOVBDRFNIU-UHFFFAOYSA-N barium(2+);dioxido(oxo)silane Chemical compound [Ba+2].[O-][Si]([O-])=O HMOQPOVBDRFNIU-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000005304 optical glass Substances 0.000 description 2
- 206010040925 Skin striae Diseases 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Landscapes
- Glass Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はビデオカメラ等に使用される固体撮像素子を保
護するカバーガラスに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cover glass for protecting a solid-state image sensor used in a video camera or the like.
近年、CCD型やMOS型の固体撮像素子は、小型、軽
量、低消gl電力といった特徴から、イメージセンサと
して撮像管からの移行が進んでいる。In recent years, CCD-type and MOS-type solid-state image sensors have been increasingly replacing image pickup tubes as image sensors due to their characteristics such as small size, light weight, and low extinguishing power.
特にカメラ一体型VTRへの搭載を機に固体撮像素子へ
の依存率が高くなっている。In particular, the dependence on solid-state image sensors is increasing as they are installed in camera-integrated VTRs.
固体撮像素子は、受・光素子であるLSIチップをアル
ミナセラミックパッケージ内に納め、その受光面に色分
解モザイクフィルタを重ねてワイヤボンディングし、さ
らにその上にカバーガラスをエポキシ樹脂またはガラス
フリットを用いて封着した構造となっている。ここで用
いられるカバーガラスは、アルミナセラよツクパッケー
ジとの気密封着によυL8ILSIチップするだけでな
く受光面へ効率的に光信号を導入するため、内部欠陥の
ない光学−的に均質な材質特性が要求される。A solid-state image sensor has an LSI chip, which is a light-receiving and light-receiving device, housed in an alumina ceramic package, and a color separation mosaic filter is layered on the light-receiving surface and wire bonded, and a cover glass is placed on top using epoxy resin or glass frit. It has a sealed structure. The cover glass used here is made of an optically homogeneous material with no internal defects, in order to not only connect the υL8ILSI chip to the alumina ceramic package by hermetically sealing it, but also to efficiently introduce optical signals to the light receiving surface. characteristics are required.
従来、この種のカバーガラスにはソーダ石灰系の白板ガ
ラスを研磨したもの、または無アルカリバリウム、シリ
ケートガラスが用いられていた。Conventionally, this type of cover glass has been made of polished soda lime-based white plate glass, or alkali-free barium or silicate glass.
固体撮像素子のチップは、高解濃度化の要輔からしだい
に画素数を増加させる方向にあり、すでに光学系寸法2
/3インチ型で有効画素@38万に達するものが製品化
されている。チップ面檀を変えずに画素数を増加させれ
ば、一画素ろたυの入射光量は減少し、感度の低下をま
ねく。Solid-state imaging device chips are gradually increasing the number of pixels due to the need for higher resolution and density, and the optical system size is already 2.
A 3-inch model with an effective pixel count of 380,000 has been commercialized. If the number of pixels is increased without changing the chip size, the amount of light incident on each pixel υ will decrease, leading to a decrease in sensitivity.
一方、固体撮像素子の出力端子に現われる信号電圧1−
1.150〜500771vと比較的大きい。このため
ビデオカメラなどではカメラ全体のS/N比も固体撮像
素子の性能に依存するところが大きい0したがって固体
撮像素子に生じるノイズを小さくできれば、光電変換後
の増幅器のゲインを上げるなどの方法によって、感度金
子げることなく小型化・?gJ画素化が実現できる。On the other hand, the signal voltage 1- appearing at the output terminal of the solid-state image sensor
It is relatively large at 1.150 to 500771v. For this reason, in video cameras and the like, the S/N ratio of the entire camera is highly dependent on the performance of the solid-state image sensor. Therefore, if the noise generated in the solid-state image sensor can be reduced, by increasing the gain of the amplifier after photoelectric conversion, etc. Miniaturization without loss of sensitivity? gJ pixelization can be realized.
不発明者は、固体撮像素子に生ずるノイズには暗電流ム
シなど素子自体に起因するもののほかにカバーガラスの
光学特注に起因するノイズのめることを見い出した。す
なわち、棺々のガラスについて調査した結果、紫外義金
吸収しにくいガラスをカバーガラスとして用いた万が、
固体撮1j素子のノイズが小さくなることが判明した。The inventors have discovered that the noise generated in a solid-state image pickup device includes not only noise caused by the device itself such as dark current bugs, but also noise caused by the optical customization of the cover glass. In other words, as a result of investigating the glass used in the coffins, it was found that in the unlikely event that glass that does not absorb ultraviolet radiation was used as the cover glass,
It has been found that the noise of the solid-state sensor 1j element is reduced.
その機構は明らかではないが、ガラスが紫外線を吸収す
ると第2図に示すように400〜500 nmにピーク
を有する螢光を発し、この螢光が暗信号時のノイズにな
ると考えられる。また、この螢光は減衰の時定数が大き
いため、残光となって固体撮像素子に入9好ましくない
。Although the mechanism is not clear, when glass absorbs ultraviolet rays, it emits fluorescence having a peak at 400 to 500 nm, as shown in FIG. 2, and it is thought that this fluorescence becomes noise during dark signals. Further, since this fluorescent light has a large decay time constant, it becomes an afterglow and enters the solid-state image sensor, which is undesirable.
従来用いられていたソーダ石灰ガラス、バリウムシリケ
ートガラスは、紫外線を吸収しやすく、上記したような
ノイズの発生が見られ、高画素数固体撮像素子のカバー
ガラスとして使用するには難点がある。Conventionally used soda lime glass and barium silicate glass tend to absorb ultraviolet rays and generate noise as described above, making it difficult to use them as cover glasses for solid-state imaging devices with a high number of pixels.
また、固体撮像素子への入射光がカバーガラスによりて
屈折・分散すると受光面上の像を不鮮明にするので、固
体撮像素子のカバーガラスには、屈折率ができるだけ低
く、分散も小さいガラスを用いることがitしい。In addition, if the light incident on the solid-state image sensor is refracted and dispersed by the cover glass, the image on the light-receiving surface will become unclear, so the cover glass of the solid-state image sensor should be made of glass with the lowest possible refractive index and small dispersion. It's so cool.
本発明は、上記事情を考慮してなされたものでガラスに
起因する固体撮像素子のノイズ発生がない固体撮像素子
用カバーガラスを提供することを目的とする。The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide a cover glass for a solid-state image sensor that does not generate noise in the solid-state image sensor due to glass.
C8題を解決するための手段と作用〕
本発明は、少なくとも重量百分率で、5I0250〜7
5%、B2O55〜20%、A−ez03 0.2〜1
6%r Fa21s 50〜200 ppmを含有する
ガラスであって、屈折率(nd )が1,52以下\ア
ツベ数(νd)が55以上、平均線膨張係数が35〜6
5 X 10”/’Cの範囲内にあり、かつ波長300
nmにおける透過率が肉厚2I!lで30%以上でちる
ことを特徴とする固体撮像素子用カバーガラスである。Means and operation for solving problem C8] The present invention provides at least a weight percentage of 5I0250-7.
5%, B2O55-20%, A-ez03 0.2-1
Glass containing 6% rFa21s 50 to 200 ppm, with a refractive index (nd) of 1.52 or less, an Atsbe number (νd) of 55 or more, and an average linear expansion coefficient of 35 to 6.
Within the range of 5 x 10"/'C and wavelength 300
Transmittance at nm is 2I thick! The present invention is a cover glass for a solid-state image sensor, which is characterized by a film thickness of 30% or more.
ガラスの光学特性において、分散は光の波長による屈折
率の変動を意味するものであるが、これはガラス中の単
結合酸素の外殻電子が励起状態へ遷移することによって
生じる光の吸収と密接に関係している。つまシ紫外部に
おける吸収が大きくなるほど分散も大きくなる傾向がり
シ、螢光発生の抑制1分散の制御の両面から紫外線透過
率の高いガラスが、固体撮像素子用のカバーガラスに適
している。すなわち、肉厚2龍のガラスで、波長300
nmにおける透過率が30%未満では、外部入射光によ
るガラスの螢光発生が顕著となシ好ましくない。In the optical properties of glass, dispersion refers to the variation in the refractive index depending on the wavelength of light, and this is closely related to the absorption of light caused by the transition of the outer shell electrons of single-bonded oxygen in the glass to an excited state. is related to. As the absorption in the ultraviolet region increases, the dispersion tends to increase as well.Glass with high ultraviolet transmittance is suitable for use as a cover glass for solid-state imaging devices from the viewpoints of suppressing fluorescence generation and controlling dispersion. In other words, the glass has a wall thickness of 2 dragons, and the wavelength is 300.
If the transmittance in nm is less than 30%, it is undesirable because fluorescence in the glass will be noticeable due to external incident light.
分散については、アツベ数(νd)で55以上であるこ
とが望ましい。アツベ数が55未画では、光の波長によ
る屈折率差からカバーガラス中での色分離を生じ、解像
度を低下させる原因となる。Regarding the dispersion, it is desirable that the Abbe number (vd) is 55 or more. When the Abbe number is less than 55, color separation occurs in the cover glass due to the difference in refractive index depending on the wavelength of light, which causes a decrease in resolution.
また、屈折率が高いガラスでは大気との屈折率差によっ
て生じる光の反射損失が大きくなり、受光素子への入射
光量が減衰するので、屈折率は低い方がよい。上記基本
組成を有するガラスで屈折率(7Jd )が1.52を
越えるガラスでは紫外域での吸収が高くなるので好まし
くない。Further, in glass having a high refractive index, the reflection loss of light caused by the difference in refractive index with the atmosphere becomes large, and the amount of light incident on the light receiving element is attenuated, so the lower the refractive index is, the better. Glasses having the above basic composition and having a refractive index (7Jd) exceeding 1.52 are not preferred because their absorption in the ultraviolet region becomes high.
平均線膨張係数は、アルミナセラミックパッケージとの
封着性を良好に保つために35〜65×10−’/Cの
範囲内にあることが必要である。The average coefficient of linear expansion needs to be within the range of 35 to 65 x 10-'/C in order to maintain good sealing with the alumina ceramic package.
次にガラスの基本組成を上記範囲に限定した理由全説明
する。Next, the reason for limiting the basic composition of the glass to the above range will be fully explained.
SiO2は、50−未満では平均線膨張係数が大きくな
りアルミナセラミックパッケージとの気密封着に支障を
きたし、75%を越えるとガラスの溶融性が悪化する。If SiO2 is less than 50%, the average coefficient of linear expansion becomes large, causing problems in hermetic sealing with the alumina ceramic package, and if it exceeds 75%, the meltability of the glass deteriorates.
B20.は、5%未満では溶融性が悪くなり、20%を
越えると化学的耐久性が悪化し、長期使用期間中に表面
にウェザリングを生じ、画像を不鮮明にする。Aノ20
3は10.5%未満ではガラスが分相を生じ、成形が困
難となり、16%を越えると脈理が発生して均質なガラ
スが得られなくなる。B20. If it is less than 5%, the melting properties will be poor, and if it exceeds 20%, the chemical durability will deteriorate, causing weathering on the surface during long-term use and making the image unclear. A no 20
If 3 is less than 10.5%, the glass will undergo phase separation, making it difficult to form, and if it exceeds 16%, striae will occur and a homogeneous glass will not be obtained.
以上のような構成成分を含有するガラスでは、”201
が200 ppmを越えると紫外線透過率が低下し、螢
光発生が顕著となυノイズの発生が増加する。一般にF
e2O,含有量が少ない程、紫外線透過率は改善される
ことが知られているoしかしながら、微量でガラスの特
性に大きな影響を与える不純物成分を完全に除去するの
は非常に困難である。このためFe2O3が50 pp
m未満というような高純度なガラスを得るためには、原
料・設備にかかるコストの著しい上昇をまねくので好ま
しくない。For glasses containing the above-mentioned constituents, “201
If it exceeds 200 ppm, the ultraviolet transmittance decreases, the generation of fluorescence becomes noticeable and the generation of υ noise increases. Generally F
It is known that the lower the e2O content, the better the ultraviolet transmittance. However, it is extremely difficult to completely remove impurity components that have a large effect on the properties of glass even in trace amounts. Therefore, Fe2O3 is 50 pp
In order to obtain a glass with a high purity of less than m, it is not preferable because it causes a significant increase in the cost of raw materials and equipment.
以下本発明の実施例について説明する。戊辰に本発明に
係る固体撮像素子用カバーガラスの実施例と無アルカリ
バリウムシリケートガラスからなる従来例との組成およ
び各特性の測定結果を示す。Examples of the present invention will be described below. In the following, we will show the composition and measurement results of each characteristic of an example of the cover glass for a solid-state image sensor according to the present invention and a conventional example made of alkali-free barium silicate glass.
表中のガラス組成はFl!203を除いて重量%、Fe
2O3は重量ppmで示しである。なお、R20はアル
カリ金属酸化物、ROはアルカリ土類金属酸化物を表わ
す。また紫外線透過率は、肉厚1.011nmおよび2
.0 mに研磨したガラス板の波長300 rlmにお
ける分光透過率を、螢光強度は餐光分光光度計を用い、
波長360 nmの紫外線を照射した時に発生する螢光
量の相対値を表示した。耐水性は日本光学硝子工業会規
格の光学ガラスの化学的耐久性の測定法により測定した
減量率で示した。The glass composition in the table is Fl! Weight % except 203, Fe
2O3 is given in ppm by weight. Note that R20 represents an alkali metal oxide, and RO represents an alkaline earth metal oxide. In addition, the ultraviolet transmittance is 1.011 nm and 2.
.. The spectral transmittance at a wavelength of 300 rlm of a glass plate polished to 0 m was measured, and the fluorescence intensity was measured using a light spectrophotometer.
The relative value of the amount of fluorescence generated when irradiated with ultraviolet light with a wavelength of 360 nm is displayed. Water resistance was expressed as a weight loss rate measured by the method for measuring chemical durability of optical glass specified by the Japan Optical Glass Industry Association.
さらに、実際に固体撮像素子のカバーガラスとして用い
たときの計測として、有効画素数38万のCODチップ
前面に肉厚1龍に研磨した各ガラスを封止して固体撮像
素子の8/N比の変化を調べた。表中には従来例ガラス
を用いたものを基準とした場合の8/N比の改轡幅をd
Bで示した。Furthermore, as a measurement when actually used as a cover glass for a solid-state image sensor, each piece of glass polished to a wall thickness of 1 dragon was sealed on the front surface of a COD chip with an effective pixel count of 380,000, and the 8/N ratio of the solid-state image sensor was measured. We investigated changes in In the table, the width of modification of 8/N ratio when using conventional glass as standard is d.
Indicated by B.
下表および第1図に示す分光透過率曲線から明らかなよ
うに、本発明の実施例ガラスは従来例ガラスに比較して
紫外線透過率が侵れ、紫外線照射後の螢光発生も1/2
〜/1oと少ない。このためカバーガラスの螢光に起因
する不要信号が低減できる。このほか本実施例のガラス
は、低屈折率・低分散であり1特に高画素数固体撮像素
子で問題となる受光面へ入射する光の損失や色分離はほ
とんど問題にならない。このような個々のガラス特性が
固体撮像素子に与える影響は決して大きなものとは言え
ないが、これらの相剰的な作用によって固体撮像素子の
ノイズ低減、感度向上に効果があるものと考えられる。As is clear from the table below and the spectral transmittance curve shown in Figure 1, the example glass of the present invention has lower ultraviolet transmittance than the conventional glass, and the fluorescence generation after ultraviolet irradiation is halved.
It is as small as ~/1o. Therefore, unnecessary signals caused by fluorescence of the cover glass can be reduced. In addition, the glass of this embodiment has a low refractive index and low dispersion, so that loss of light incident on the light receiving surface and color separation, which are problems especially in solid-state image sensors with a large number of pixels, are hardly a problem. Although such individual glass characteristics cannot be said to have a large influence on the solid-state image sensor, it is thought that their mutual effects are effective in reducing noise and improving the sensitivity of the solid-state image sensor.
この結果、本実施例ガラスを用いた固体撮像素子の8/
N比は、従来例ガラス使用の場合に較べて3〜8dB向
上した。As a result, the solid-state image sensor using the glass of this example was 8/8
The N ratio was improved by 3 to 8 dB compared to the conventional glass case.
また、本実施例ガラスは、ア/I/ミナセラミックパッ
ケージとの封着にエポキシ樹脂を用いることを考慮して
アルカリ成分の含有量を必要最小限に抑えである。これ
によってガラス中のアルカリ成分がエポキシ樹脂を劣化
させるのを防ぎ、ガラス自体の化学的耐久性も向上する
ので、上記のような優れた特性を長期間維持することが
できる。In addition, in the glass of this example, the content of alkaline components is kept to the minimum necessary in consideration of the use of epoxy resin for sealing with the A/I/Mina ceramic package. This prevents the alkali components in the glass from deteriorating the epoxy resin and improves the chemical durability of the glass itself, making it possible to maintain the above-mentioned excellent properties for a long period of time.
以上説明したように本発明の固体撮像素子用カバーガラ
スは、
■紫外線透過率が高く、外部入射光による螢光発生が少
ない。As explained above, the cover glass for a solid-state image pickup device of the present invention has (1) high ultraviolet transmittance and less generation of fluorescence due to externally incident light;
■低屈折率であるため、光の反射損失が小さい。■Low refractive index, so light reflection loss is small.
■低分散であるため、色分離を生じにくい。■Low dispersion, so color separation is less likely to occur.
といった特徴を有する。It has the following characteristics.
このため、本発明に係るカバーガラスを用いた固体mf
ffi素子は、カバーガラスに起因するノイズの発生が
小さく、高画素化に伴う感度の低下も小きく抑えられる
などの効果がある。For this reason, solid mf using the cover glass according to the present invention
The ffi element has effects such as generating less noise due to the cover glass and suppressing a decrease in sensitivity due to an increase in the number of pixels.
したがって、本発明の固体撮像素子用カバーガラスは、
高画素数固体撮像索子のカバーガラスとして極めて好適
したものである。Therefore, the cover glass for a solid-state image sensor of the present invention is
It is extremely suitable as a cover glass for a solid-state imaging device with a high pixel count.
第1図は本発明の実施例ガラスおよび従来例ガラスの紫
外域における分光透過特性を示す曲線図、第2図は従来
例ガラスへの照射紫外線と発生する螢光との関係を示す
曲線図でおる。
第 1 図
波 長 (nm)
第 2 刃
波 長 <hm)Fig. 1 is a curve diagram showing the spectral transmission characteristics in the ultraviolet region of the example glass of the present invention and the conventional glass, and Fig. 2 is a curve diagram showing the relationship between the ultraviolet rays irradiated to the conventional glass and the generated fluorescence. is. Figure 1 Wavelength (nm) 2nd blade wavelength <hm)
Claims (1)
_2O_3 5〜20%、Al_2O_3 0.2〜1
6%、Fe_2O_3 50〜200ppmを含有する
ガラスであつて、屈折率(nd)が1.52以下、アッ
ベ数(νd)が55以上、平均線膨張係数が35〜65
×10^−^7/℃の範囲内にあり、かつ波長300n
mにおける透過率が肉厚2mmで30%以上であること
を特徴とする固体撮像素子用カバーガラス。At least in weight percentage, SiO_2 50-70%B
_2O_3 5-20%, Al_2O_3 0.2-1
6%, Fe_2O_3 50 to 200 ppm, the refractive index (nd) is 1.52 or less, the Abbe number (νd) is 55 or more, and the average linear expansion coefficient is 35 to 65.
×10^-^7/℃ and wavelength 300n
A cover glass for a solid-state image sensor, characterized in that the transmittance at m is 30% or more at a wall thickness of 2 mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63154349A JP2634063B2 (en) | 1988-06-22 | 1988-06-22 | Cover glass for solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63154349A JP2634063B2 (en) | 1988-06-22 | 1988-06-22 | Cover glass for solid-state imaging device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01320236A true JPH01320236A (en) | 1989-12-26 |
JP2634063B2 JP2634063B2 (en) | 1997-07-23 |
Family
ID=15582221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63154349A Expired - Lifetime JP2634063B2 (en) | 1988-06-22 | 1988-06-22 | Cover glass for solid-state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2634063B2 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006093925A (en) * | 2004-09-22 | 2006-04-06 | Olympus Corp | Image pick-up unit and its manufacturing method |
WO2007094373A1 (en) * | 2006-02-14 | 2007-08-23 | Nippon Sheet Glass Company, Limited | Glass composition |
JP2008280235A (en) * | 2007-04-09 | 2008-11-20 | Olympus Corp | Optical glass and optical device using the same |
WO2009044874A1 (en) | 2007-10-05 | 2009-04-09 | Olympus Corporation | Optical glass, and optical device having the optical glass |
WO2009044873A1 (en) | 2007-10-05 | 2009-04-09 | Olympus Corporation | Optical glass, and optical device having the optical glass |
JP2010184816A (en) * | 2009-01-16 | 2010-08-26 | Asahi Glass Co Ltd | Window glass of solid-state image sensor package |
JP2010248046A (en) * | 2009-04-17 | 2010-11-04 | Nippon Electric Glass Co Ltd | Glass |
JP2014208586A (en) * | 2009-07-08 | 2014-11-06 | 日本電気硝子株式会社 | Glass sheet |
US20190004294A1 (en) * | 2015-08-19 | 2019-01-03 | Sony Semiconductor Solutions Corporation | Image pickup device and image pickup apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5792544A (en) * | 1980-11-26 | 1982-06-09 | Sumita Kogaku Glass Seizosho:Kk | Glass of low expansion |
JPS5849640A (en) * | 1981-09-18 | 1983-03-23 | Ohara Inc | Face glass for camera tube |
JPS6021830A (en) * | 1983-07-15 | 1985-02-04 | Nippon Electric Glass Co Ltd | Ultraviolet ray transmissive glass useful for sealing alumina |
JPS60239342A (en) * | 1984-05-08 | 1985-11-28 | シヨツト グラス テクノロジース インコーポレーテツド | Low expandable alkali-free borosilicate glass useful for photomask |
JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
-
1988
- 1988-06-22 JP JP63154349A patent/JP2634063B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5792544A (en) * | 1980-11-26 | 1982-06-09 | Sumita Kogaku Glass Seizosho:Kk | Glass of low expansion |
JPS5849640A (en) * | 1981-09-18 | 1983-03-23 | Ohara Inc | Face glass for camera tube |
JPS6021830A (en) * | 1983-07-15 | 1985-02-04 | Nippon Electric Glass Co Ltd | Ultraviolet ray transmissive glass useful for sealing alumina |
JPS60239342A (en) * | 1984-05-08 | 1985-11-28 | シヨツト グラス テクノロジース インコーポレーテツド | Low expandable alkali-free borosilicate glass useful for photomask |
JPS6265954A (en) * | 1985-09-18 | 1987-03-25 | Nippon Electric Glass Co Ltd | Borosilicate glass for sealing alumina |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006093925A (en) * | 2004-09-22 | 2006-04-06 | Olympus Corp | Image pick-up unit and its manufacturing method |
WO2007094373A1 (en) * | 2006-02-14 | 2007-08-23 | Nippon Sheet Glass Company, Limited | Glass composition |
JP2008280235A (en) * | 2007-04-09 | 2008-11-20 | Olympus Corp | Optical glass and optical device using the same |
US8178454B2 (en) | 2007-04-09 | 2012-05-15 | Olympus Corporation | Optical glass and optical apparatus using the same |
WO2009044874A1 (en) | 2007-10-05 | 2009-04-09 | Olympus Corporation | Optical glass, and optical device having the optical glass |
WO2009044873A1 (en) | 2007-10-05 | 2009-04-09 | Olympus Corporation | Optical glass, and optical device having the optical glass |
JP2010184816A (en) * | 2009-01-16 | 2010-08-26 | Asahi Glass Co Ltd | Window glass of solid-state image sensor package |
JP2010248046A (en) * | 2009-04-17 | 2010-11-04 | Nippon Electric Glass Co Ltd | Glass |
JP2014208586A (en) * | 2009-07-08 | 2014-11-06 | 日本電気硝子株式会社 | Glass sheet |
US20190004294A1 (en) * | 2015-08-19 | 2019-01-03 | Sony Semiconductor Solutions Corporation | Image pickup device and image pickup apparatus |
US10962747B2 (en) * | 2015-08-19 | 2021-03-30 | Sony Semiconductor Solutions Corporation | Image pickup device and image pickup apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2634063B2 (en) | 1997-07-23 |
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