JPH01319975A - Blue light-emitting device - Google Patents
Blue light-emitting deviceInfo
- Publication number
- JPH01319975A JPH01319975A JP63152577A JP15257788A JPH01319975A JP H01319975 A JPH01319975 A JP H01319975A JP 63152577 A JP63152577 A JP 63152577A JP 15257788 A JP15257788 A JP 15257788A JP H01319975 A JPH01319975 A JP H01319975A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- schottky
- negative electrode
- electrode
- blue light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 46
- 239000010432 diamond Substances 0.000 claims abstract description 46
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 12
- 239000007772 electrode material Substances 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
- 239000010937 tungsten Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 230000001788 irregular Effects 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0033—Devices characterised by their operation having Schottky barriers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）産業上の利用分野
この発明は、電界の印加により青色に発光する青色発光
デバイスに関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a blue light emitting device that emits blue light upon application of an electric field.
（ｂ）従来の技術
バルク状または薄膜状に形成したダイヤモンドの対向す
る２側面のそれぞれにショットキ負電極とオーミ、り正
電極とを接触させ、これに電界を印加すると青色に発光
することが知られている。(b) Conventional technology It is known that when an electric field is applied to a Schottky negative electrode and an ohmic or positive electrode on each of the two opposing sides of a diamond formed in the form of a bulk or thin film, it emits blue light. It is being
この青色発光は、Ｐ型結晶体であるダイヤモンドに負電
極から電子を注入することによって生じる電子−正孔結
合が原因である。負電極をショットキ電極とするのは負
電極をエミッタ電極として負電極から電子を注入し、ダ
イヤモンド内部で強制的に電子−正孔結合を行わせるた
めである。一般に負電極を構成する材料としては、ダイ
ヤモンドとショットキ接合するタングステンなどの金属
材料が用いられる。また、正電極としてはＴｉ （チ
タン）等、ダイヤモンドとの関係でオーミック電極を構
成する材料が選ばれる。This blue light emission is caused by electron-hole coupling that occurs when electrons are injected from the negative electrode into diamond, which is a P-type crystal. The reason why the negative electrode is a Schottky electrode is to use the negative electrode as an emitter electrode and inject electrons from the negative electrode to force electron-hole bonding inside the diamond. Generally, a metal material such as tungsten, which forms a Schottky bond with diamond, is used as a material constituting the negative electrode. Further, as the positive electrode, a material such as Ti (titanium), which constitutes an ohmic electrode, is selected due to its relationship with diamond.
（Ｃ）発明が解決しようとする課題
しかしながら、従来のダイヤモンドを用いた青色発光デ
バイスでは、ショッＩ・キ負電極をダイヤモンドの一方
の側面に平面状に構成していたため、ショットキ負電極
とダイヤモンドとの接触面積が十分でなく、また接触面
が平坦であるために電界集中がなかった。このため、シ
ョットキ電極からダイヤモンドへの電子の注入効率を向
上することができず、高輝度な青色発光を得ることがで
きない欠点があった。(C) Problems to be Solved by the Invention However, in conventional blue light-emitting devices using diamond, the Schottky negative electrode was configured in a planar manner on one side of the diamond. Since the contact area was not sufficient and the contact surface was flat, there was no electric field concentration. For this reason, the efficiency of electron injection from the Schottky electrode into the diamond cannot be improved, and there is a drawback that high-intensity blue light emission cannot be obtained.
この発明の目的は、ショットキ負電極とダイヤモンドと
の接触面の形状を工夫することにより、接触面積を広く
するとともに、十分な電界集中を得、ショットキ負電極
からダイヤモンドへの電子の注入効率を向上することに
よって電子−正孔結合の効率を向上して鮮明かつ高輝度
の青色発光を得ることができる青色発光デバイスを提供
することにある。The purpose of this invention is to widen the contact area and obtain sufficient electric field concentration by devising the shape of the contact surface between the Schottky negative electrode and the diamond, thereby improving the efficiency of electron injection from the Schottky negative electrode to the diamond. It is an object of the present invention to provide a blue light emitting device which can improve the efficiency of electron-hole coupling and thereby obtain clear and high brightness blue light emission.
（ｄ１課題を解決するための手段
この発明の青色発光デバイスは、バルク状または薄膜状
のダイヤモンドの対向する２側面にそれぞれショットキ
負電極とオーミック正電極とを接続したデバイスにおい
て、前記ショットキ負電極とダイヤモンドとの接合面を
角部のある凹凸形状にしたことを特徴とする。(Means for Solving Problem d1) The blue light emitting device of the present invention is a device in which a Schottky negative electrode and an ohmic positive electrode are connected to two opposing sides of a diamond in the form of a bulk or a thin film. The joint surface with the diamond is characterized by an uneven shape with corners.
また、前記ダイヤモンドに代えてバルク状または薄膜状
の青色発光半導体を用いることもできる（ｅ）作用
この発明においては、バルク状または薄膜状のダイヤモ
ンドの一方の側面とショットキ電極との接触面が角部の
ある凹凸状となっているために、ダイヤモンドの一方の
側面に全面に渡ってショットキ負電極が平面的に接触す
る場合に比較して接触面積は増加する。また、その接触
面の形状が角部のある凹凸状であるため、接触界面の尖
鋭部において電界集中を生じる。これらのことから、シ
ョットキ負電極とダイヤモンドの側面との接触面積の拡
大と、電子注入時における電界集中とｋこより、電子の
注入効率が向上する。In addition, a bulk or thin film blue light emitting semiconductor may be used instead of the diamond. (e) Effect In this invention, the contact surface between one side of the bulk or thin film diamond and the Schottky electrode is at an angle Since the diamond has an uneven shape, the contact area increases compared to a case where the Schottky negative electrode contacts one side surface of the diamond in a planar manner over the entire surface. Further, since the shape of the contact surface is uneven with corners, electric field concentration occurs at the sharp portion of the contact interface. For these reasons, the electron injection efficiency is improved by expanding the contact area between the Schottky negative electrode and the side surface of the diamond and by concentrating the electric field during electron injection.
ｉｆ）実施例
第１図は、この発明の実施例である青色発光デバイスの
概略の構成を示す図である。if) Example FIG. 1 is a diagram showing a schematic configuration of a blue light emitting device which is an example of the present invention.
青色発光デバイス１１を構成する薄膜状ダイヤモンド１
は、厚さｔを数１００μｍ程度にして形成されている。Thin film diamond 1 constituting blue light emitting device 11
is formed with a thickness t of approximately several 100 μm.
このダイヤモンド１の一方の側面にショットキ負電極２
が形成され、対向する側面にはオーミック正電極３が形
成されている。各電極は蒸着等によりダイヤモンド表面
につけられる。ショットキ負電極２にはダイヤモンドと
ショットキ接合するタングステンなどの電極材料を用い
、オーミック電極３にはチタンなどの電極材料を用いる
ことができる。Schottky negative electrode 2 on one side of this diamond 1
are formed, and an ohmic positive electrode 3 is formed on the opposing side surface. Each electrode is applied to the diamond surface by vapor deposition or the like. The Schottky negative electrode 2 can be made of an electrode material such as tungsten that forms a Schottky junction with diamond, and the ohmic electrode 3 can be made of an electrode material such as titanium.
第２図は、上記ダイヤモンドの一方の側面を示す要部の
拡大斜視図である。FIG. 2 is an enlarged perspective view of essential parts showing one side of the diamond.
ダイヤモンド１においてショットキ負電極２が形成され
る側面には、模型断面形状の微小凹部４が多数形成され
ている。微小凹部４の幅℃および深さｄはともに数μｍ
程度である。ダイヤモンド１の側面に微小凹部４を形成
する方法としては公知のＲＩＥ法（リアクティブ・イオ
ン・エツチング法）などのイオンビームエツチング法（
例えばＮ＋Ｎ、Ｅｆｒｅｎ＋ｏｗ他” Ｉｏｎ ｂｅａ
ｍ ａｓｓｉｓｔｅｄ ｅｔｃｈｉｎｇ ｏｆｄｉａｍ
ｏｎｄ″： Ｊ、 Ｖａｃ、 Ｓｃｉ 、 Ｔｅｃｈｎ
ｏｌ 、 ［１３（１） ＋ Ｊａｎ／Ｆｅｂ１９８５
に示されている）を用いることができる。On the side surface of the diamond 1 where the Schottky negative electrode 2 is formed, a large number of minute recesses 4 having a model cross-sectional shape are formed. The width °C and depth d of the minute recess 4 are both several μm.
That's about it. As a method for forming the minute recesses 4 on the side surface of the diamond 1, an ion beam etching method such as the well-known RIE method (reactive ion etching method) is used.
For example, N+N, Efren+ow, etc.” Ion bea
m assisted etching ofdiam
ond″: J, Vac, Sci, Techn
ol, [13(1) + Jan/Feb1985
) can be used.
このようにして多数の微小凹部４が形成されたダイヤモ
ンド１の一方の側面に対して真空蒸着法などによりタン
グステンなどの電極材料をつける、これによってダイヤ
モンドの薄膜材１の一方の側面はタングステンなどの電
極材料により被覆されるが同時に、微小凹部４内もその
電極で埋まる。なお、ダイヤモンド１の他方の側面には
真空蒸着等によりチタンなどの電極材料を用いてオーミ
ック正電極３が形成される。An electrode material such as tungsten is applied by vacuum evaporation to one side of the diamond 1 in which a large number of minute recesses 4 are formed in this way. It is covered with the electrode material, but at the same time, the inside of the minute recess 4 is also filled with the electrode. Incidentally, an ohmic positive electrode 3 is formed on the other side of the diamond 1 using an electrode material such as titanium by vacuum evaporation or the like.
以上のようにして構成された青色発光デバイス１１に対
して電圧を印加すると、ショットキ負電極２からダイヤ
モンド１の内部に電子が注入され電子−正孔結合が行わ
れる。この電子−正孔結合の結果、ダイヤモンドのバン
ドギャップに基づく青色が発光する。このとき、ショッ
トキ負電極２とダイヤモンドとの接触面は凹凸状でｉる
ために、接触面が平坦である場合に比べて接触面積が大
きくなる。まな、第３図は、微小凹部４を埋めて。When a voltage is applied to the blue light emitting device 11 configured as described above, electrons are injected from the Schottky negative electrode 2 into the diamond 1 and electron-hole coupling occurs. As a result of this electron-hole coupling, blue light is emitted based on the band gap of diamond. At this time, since the contact surface between the Schottky negative electrode 2 and the diamond is uneven, the contact area becomes larger than when the contact surface is flat. In Figure 3, the minute recess 4 is filled.
いるショットキ負電極２の微小凹部である。この微小凸
部５は模型形状を呈することから、青色発光デバイス１
１に電圧が印加された際、微小凸部の先端部分において
電界集中を生じる。このようにショットキ負電極２とダ
イヤモンド１との接触面積が広いこと、およびショット
キ負電極２の微小凸部５の先端部分において電界集中を
生じることによりショットキ負電極２からダイヤモンド
１への電子の注入効率が向上し、高輝度の青色発光を得
ることができる。This is a minute recess in the Schottky negative electrode 2. Since this minute convex portion 5 has a model shape, the blue light emitting device 1
When a voltage is applied to 1, an electric field is concentrated at the tip of the minute convex portion. In this way, electrons are injected from the Schottky negative electrode 2 into the diamond 1 due to the wide contact area between the Schottky negative electrode 2 and the diamond 1 and the concentration of electric field at the tip of the minute convex portion 5 of the Schottky negative electrode 2. Efficiency is improved and high-intensity blue light emission can be obtained.
なお、ダイヤモンド１はバルク状であってもよく、また
ダイヤモンドに代えてＺｎ５ｅ、ＺｎＳおよびＳｉＣな
どの青色発光半導体を用いても良い。２また、本実施例
では微小凸部を模型形状に形成したが、これらを第４図
（Ａ）または（Ｂ）に示すように角錐形または円錐形に
しても良く、また同図（Ｃ）に示すような立方体や直方
体形状にすることも可能である。Note that the diamond 1 may be in a bulk form, and a blue light-emitting semiconductor such as Zn5e, ZnS, and SiC may be used instead of diamond. 2 In addition, in this example, the minute convex portions were formed in a model shape, but they may be shaped into a pyramidal or conical shape as shown in FIG. 4(A) or (B). It is also possible to make it into a cube or rectangular parallelepiped shape as shown in the figure.
（ａ発明の効果
この発明によれば、ショットキ負電極とダイヤモンドと
の接触面積が大きくなり、またショットキ負電極の微小
凸部は尖鋭形状のような角部のある凹凸状に形成されて
いるため電圧印加時にはその角部において電界集中を生
じる。これら接触面積の拡大および電界集中によりショ
ットキ負電極からダイヤモンドへの電子の注入効率が大
きく向上し、高輝度かつ鮮明な青色発光を得ることがで
きる。(a) Effects of the invention According to this invention, the contact area between the Schottky negative electrode and the diamond is increased, and the minute convex portions of the Schottky negative electrode are formed in an uneven shape with sharp corners. When a voltage is applied, an electric field is concentrated at the corners.By expanding the contact area and concentrating the electric field, the injection efficiency of electrons from the Schottky negative electrode into the diamond is greatly improved, and high brightness and clear blue light emission can be obtained.
また、Ｚｎ５ｅ、ＺｎＳおよびＳｉＣ等の青色発光半導
体を用いた場合にも、接触面積の拡大および電界集中に
よりショットキ負電極からダイヤモン・ドへの電子の注
入効率が大きく向上し、高輝度かつ鮮明な青色発光を得
ることができる。Furthermore, when blue-emitting semiconductors such as Zn5e, ZnS, and SiC are used, the efficiency of electron injection from the Schottky negative electrode to the diamond is greatly improved by expanding the contact area and concentrating the electric field, resulting in high brightness and clear brightness. Blue light emission can be obtained.
第１図はこの発明の実施例である青色発光デバイスの構
成を示す図、第２図は同青色発光デバイスの一部を構成
するダイヤモンドの要部を示す拡大斜視図、第３図は同
青色発光デバイスのショットキ負電極の微小凸部を示す
図である。また第４図（Ａ）〜（Ｃ）は何れもこの発明
の他の実施例における微小凸部の形状を示す図である。
１−ダイヤモンド、
２−ショットキ負電極、
３−オーミック正電極、
４−微小凹部、
５−微小凸部、
１１−青色発光デバイス。
出願人 平木 昭夫 （外２名）Fig. 1 is a diagram showing the configuration of a blue light emitting device that is an embodiment of the present invention, Fig. 2 is an enlarged perspective view showing the main part of a diamond that constitutes a part of the blue light emitting device, and Fig. 3 is a diagram showing the same blue light emitting device. FIG. 3 is a diagram showing minute convex portions of a Schottky negative electrode of a light emitting device. Moreover, FIGS. 4(A) to 4(C) are all diagrams showing the shapes of minute convex portions in other embodiments of the present invention. 1-Diamond, 2-Schottky negative electrode, 3-Ohmic positive electrode, 4-Micro recess, 5-Micro protrusion, 11-Blue light emitting device. Applicant Akio Hiraki (2 others)
Claims (2)
２側面にそれぞれショットキ負電極とオーミック正電極
とを接続したデバイスにおいて、前記ショットキ負電極
とダイヤモンドとの接合面を角部のある凹凸形状にした
ことを特徴とする青色発光デバイス。(1) In a device in which a Schottky negative electrode and an ohmic positive electrode are connected to two opposing sides of a bulk or thin film diamond, the bonding surface between the Schottky negative electrode and the diamond has an uneven shape with corners. A blue light emitting device characterized by:
の青色発光半導体を用いた請求項１記載の青色発光デバ
イス。(2) The blue light emitting device according to claim 1, wherein a bulk or thin film blue light emitting semiconductor is used in place of the diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15257788A JP2716732B2 (en) | 1988-06-21 | 1988-06-21 | Blue light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15257788A JP2716732B2 (en) | 1988-06-21 | 1988-06-21 | Blue light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01319975A true JPH01319975A (en) | 1989-12-26 |
| JP2716732B2 JP2716732B2 (en) | 1998-02-18 |
Family
ID=15543513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15257788A Expired - Lifetime JP2716732B2 (en) | 1988-06-21 | 1988-06-21 | Blue light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2716732B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10144474A (en) * | 1996-11-15 | 1998-05-29 | Kobe Steel Ltd | Light emitting element having diamond film and plane panel display |
| KR100480745B1 (en) * | 1998-03-10 | 2005-05-16 | 삼성전자주식회사 | Method of manufacturing of diamond field emitter |
-
1988
- 1988-06-21 JP JP15257788A patent/JP2716732B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10144474A (en) * | 1996-11-15 | 1998-05-29 | Kobe Steel Ltd | Light emitting element having diamond film and plane panel display |
| KR100480745B1 (en) * | 1998-03-10 | 2005-05-16 | 삼성전자주식회사 | Method of manufacturing of diamond field emitter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2716732B2 (en) | 1998-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5138237A (en) | Field emission electron device employing a modulatable diamond semiconductor emitter | |
| US4683399A (en) | Silicon vacuum electron devices | |
| CA1194082A (en) | Cathode ray tube with semiconductor cathode having deflection electrodes | |
| ATE35480T1 (en) | SEMICONDUCTOR DEVICE FOR GENERATION OF AN ELECTRON BEAM. | |
| JPH0461729A (en) | Micro-size vacuum tube | |
| JPH01319975A (en) | Blue light-emitting device | |
| KR920015621A (en) | Vacuum microelectronic ballistic transistor and method of manufacturing the same | |
| JPS63257158A (en) | Electron emitting element | |
| US3916227A (en) | Piezoelectric igniter with a magnetic striking mechanism | |
| JPH05145118A (en) | Light emitting device | |
| JPS63119131A (en) | Electron emitting element | |
| JP3005023B2 (en) | Semiconductor electron-emitting device and driving method thereof | |
| GB1303659A (en) | ||
| GB1303660A (en) | ||
| JPH03266333A (en) | Solid-state electron emitting device | |
| JPS61194887A (en) | Semiconductor laser | |
| JPH07263746A (en) | Light emitting diode and manufacture of it | |
| JPS5847714Y2 (en) | Schottky barrier field effect transistor | |
| JP2000243217A (en) | Semiconductor diamond electron emitting element | |
| JPH04245135A (en) | Vacuum tube with optically excited electric field emission cathode | |
| JPS611069A (en) | Light emitting diode | |
| RU2089004C1 (en) | Vacuum transistor | |
| JPS62137886A (en) | Optical fiber structure | |
| JP3003214B2 (en) | Semiconductor device | |
| JPS58132981A (en) | Zener diode |