JPH01310356A - Cleaning liquid and cleaning method for automatic developing machine for engraving of planographic printing plate - Google Patents
Cleaning liquid and cleaning method for automatic developing machine for engraving of planographic printing plateInfo
- Publication number
- JPH01310356A JPH01310356A JP14239388A JP14239388A JPH01310356A JP H01310356 A JPH01310356 A JP H01310356A JP 14239388 A JP14239388 A JP 14239388A JP 14239388 A JP14239388 A JP 14239388A JP H01310356 A JPH01310356 A JP H01310356A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- acid
- developing machine
- automatic developing
- cleaning liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 72
- 239000007788 liquid Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000007524 organic acids Chemical class 0.000 claims description 8
- 150000002222 fluorine compounds Chemical class 0.000 claims description 6
- 125000001153 fluoro group Chemical class F* 0.000 claims 2
- 239000002253 acid Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000001988 toxicity Effects 0.000 abstract description 2
- 231100000419 toxicity Toxicity 0.000 abstract description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 3
- 229910052731 fluorine Inorganic materials 0.000 abstract 3
- 239000011737 fluorine Substances 0.000 abstract 3
- 239000003599 detergent Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 239000000203 mixture Substances 0.000 description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 7
- 239000012459 cleaning agent Substances 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000007921 spray Substances 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- -1 polyoxyethylene Polymers 0.000 description 3
- JOOXCMJARBKPKM-UHFFFAOYSA-N 4-oxopentanoic acid Chemical compound CC(=O)CCC(O)=O JOOXCMJARBKPKM-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- DXIGZHYPWYIZLM-UHFFFAOYSA-J tetrafluorozirconium;dihydrofluoride Chemical compound F.F.F[Zr](F)(F)F DXIGZHYPWYIZLM-UHFFFAOYSA-J 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- ILKULJZMELENNS-UHFFFAOYSA-N (2-amino-1-hydroxy-2-methyl-1-phosphonopropyl)phosphonic acid Chemical compound CC(C)(N)C(O)(P(O)(O)=O)P(O)(O)=O ILKULJZMELENNS-UHFFFAOYSA-N 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- GQLPWHMYJOSZCR-UHFFFAOYSA-N (diphosphonoamino)phosphonic acid Chemical compound OP(O)(=O)N(P(O)(O)=O)P(O)(O)=O GQLPWHMYJOSZCR-UHFFFAOYSA-N 0.000 description 1
- CEGRHPCDLKAHJD-UHFFFAOYSA-N 1,1,1-propanetricarboxylic acid Chemical compound CCC(C(O)=O)(C(O)=O)C(O)=O CEGRHPCDLKAHJD-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- GLULCKCBVYGUDD-UHFFFAOYSA-N 2-phosphonobutane-1,1,1-tricarboxylic acid Chemical compound CCC(P(O)(O)=O)C(C(O)=O)(C(O)=O)C(O)=O GLULCKCBVYGUDD-UHFFFAOYSA-N 0.000 description 1
- ASZZHBXPMOVHCU-UHFFFAOYSA-N 3,9-diazaspiro[5.5]undecane-2,4-dione Chemical compound C1C(=O)NC(=O)CC11CCNCC1 ASZZHBXPMOVHCU-UHFFFAOYSA-N 0.000 description 1
- QJZYHAIUNVAGQP-UHFFFAOYSA-N 3-nitrobicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1C2C=CC1C(C(=O)O)C2(C(O)=O)[N+]([O-])=O QJZYHAIUNVAGQP-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- IMQLKJBTEOYOSI-GPIVLXJGSA-N Inositol-hexakisphosphate Chemical compound OP(O)(=O)O[C@H]1[C@H](OP(O)(O)=O)[C@@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@@H]1OP(O)(O)=O IMQLKJBTEOYOSI-GPIVLXJGSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- IMQLKJBTEOYOSI-UHFFFAOYSA-N Phytic acid Natural products OP(O)(=O)OC1C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C1OP(O)(O)=O IMQLKJBTEOYOSI-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- KPVWDKBJLIDKEP-UHFFFAOYSA-L dihydroxy(dioxo)chromium;sulfuric acid Chemical compound OS(O)(=O)=O.O[Cr](O)(=O)=O KPVWDKBJLIDKEP-UHFFFAOYSA-L 0.000 description 1
- XQRLCLUYWUNEEH-UHFFFAOYSA-N diphosphonic acid Chemical compound OP(=O)OP(O)=O XQRLCLUYWUNEEH-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229960004275 glycolic acid Drugs 0.000 description 1
- 239000004021 humic acid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229940040102 levulinic acid Drugs 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- MBKDYNNUVRNNRF-UHFFFAOYSA-N medronic acid Chemical compound OP(O)(=O)CP(O)(O)=O MBKDYNNUVRNNRF-UHFFFAOYSA-N 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- YOYLLRBMGQRFTN-SMCOLXIQSA-N norbuprenorphine Chemical compound C([C@@H](NCC1)[C@]23CC[C@]4([C@H](C3)C(C)(O)C(C)(C)C)OC)C3=CC=C(O)C5=C3[C@@]21[C@H]4O5 YOYLLRBMGQRFTN-SMCOLXIQSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 235000002949 phytic acid Nutrition 0.000 description 1
- 239000000467 phytic acid Substances 0.000 description 1
- 229940068041 phytic acid Drugs 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000008237 rinsing water Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010802 sludge Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 description 1
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Printing Plates And Materials Therefor (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は平版印刷版製版用自動現像機の改良された洗浄
液とそれを用いた洗浄方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improved cleaning solution for an automatic developing machine for planographic printing plate making and a cleaning method using the same.
感光性平版印刷版(以下PS版という)を多量に現像処
理する場合、一般に自動現像機が使用されている。この
自動現像機は、一般にPS版を搬送する装置と、現像液
槽およびスプレー装置からなり、露光済みのPS版を水
平に搬送しながら、ポンプで汲み上げた現像液をスプレ
ーノズルから吹付けて現像処理するものである。その他
現像液が満たされた現像処理槽中に液中ガイドロールな
どによってPS版を浸漬搬送させて現像処理する方法も
知られている。When developing a large quantity of photosensitive lithographic printing plates (hereinafter referred to as PS plates), an automatic developing machine is generally used. This automatic developing machine generally consists of a device for transporting the PS plate, a developer tank, and a spray device, and while the exposed PS plate is transported horizontally, the developer pumped up by a pump is sprayed from a spray nozzle to develop it. It is something to be processed. Other methods are also known in which the PS plate is immersed and conveyed in a developing tank filled with a developing solution using a submerged guide roll or the like.
このような自動現像機処理においては、経済的な観点か
ら現像液をくり返し循環使用しているので、現像液中に
溶出した感光層成分の濃度が徐々に高くなり、それに伴
って現像液中にカスやヘドロが生じて、現像槽の周辺や
現像液ei環系の配管中に堆積して種々問題を生じてい
た。In this type of automatic processor processing, the developer is recycled repeatedly from an economical point of view, so the concentration of the photosensitive layer components eluted into the developer gradually increases, and as a result, the concentration of the photosensitive layer components dissolved in the developer increases. Dirt and sludge are generated and deposited around the developer tank and in the piping of the developer EI ring system, causing various problems.
また、一般に0−キノンジアジド化合物を主成分とする
感光層を有するPS版の現像液としては、現像後の非画
線部に親水性を付与するために珪酸塩のアルカリ水溶液
がよく用いられているが、このような現像液は現像機の
運転停止時の乾燥や液ハネにより、自動現像機のスプレ
ーパイプ内や現像槽とその周辺に水不溶性のシリカとし
て析出し易く、単に美観上の問題だけでなく、様々なト
ラブルの原因となっていた。Additionally, as a developing solution for a PS plate having a photosensitive layer containing an 0-quinonediazide compound as a main component, an alkaline aqueous solution of silicate is often used to impart hydrophilicity to the non-image area after development. However, such developer tends to precipitate as water-insoluble silica in the spray pipe of an automatic processor, in and around the developer tank due to drying or splashing when the developer is stopped, and this problem is simply an aesthetic problem. Instead, it caused various problems.
以上のような自動現像機を用いて多量の現像液を循環再
使用する方式の欠点を解決する方法として、露光された
PS版の露光面に一定量の新しい現像液を供給して、現
像した後、現像液を除去し、該現像液を廃棄する方法(
以下使い捨て現像方式という)が特開昭48−2950
5号、特開昭55−32044号公報および米国特許第
4.222.656号明細書に開示されているが、この
種の自動現像機においても長期間使用している間に汚れ
を生ずることはまぬがれなかった。As a method to solve the drawbacks of the above-mentioned method of circulating and reusing a large amount of developer using an automatic developing machine, a fixed amount of new developer is supplied to the exposed surface of the exposed PS plate for development. After that, the developer is removed and the developer is discarded (
(hereinafter referred to as the disposable development method) was published in Japanese Patent Application Laid-Open No. 48-2950.
No. 5, Japanese Unexamined Patent Publication No. 55-32044, and U.S. Pat. No. 4,222,656 disclose that even in this type of automatic developing machine, stains occur during long-term use. I couldn't escape.
更には、長期間に亘って多量のPS版を処理する場合、
特開昭58−95349号公報に開示されているような
現像液補充方式が提案されているが、現像液の能力を検
出するセンサーに汚れが堆積して、正確な値を示さなく
なり、安定して正確な補充ができなくなることがあった
。Furthermore, when processing a large number of PS versions over a long period of time,
A developer replenishment method such as that disclosed in Japanese Patent Application Laid-open No. 58-95349 has been proposed, but dirt accumulates on the sensor that detects the capacity of the developer, causing it to no longer show accurate values and becoming unstable. In some cases, accurate refilling could not be performed.
以上のような問題点を解決するため、従来より1週間〜
1ケ月毎に自動現像機から現像液などの処理薬品を回収
して、自動現像機を水洗することが行われてきた。しか
し、自動現像機の使用期間が長くなるにしたがって汚れ
が落ちに(くなり、洗浄に多くの時間を費していた。特
に現像液が珪酸塩のアルカリ水溶液からなる場合、析出
したシリカは水不溶性であり水洗浄は全く困難であった
。In order to resolve the above problems, it will take one week to
Processing chemicals such as developer solution have been collected from automatic processors every month, and the automatic processors have been washed with water. However, as the period of use of the automatic developing machine increases, the dirt becomes difficult to remove, and a lot of time is spent cleaning it.Especially when the developing solution consists of an alkaline aqueous solution of silicate, the precipitated silica is removed by water. It was insoluble and water washing was quite difficult.
そこで従来より、硫酸や塩酸などの強酸を含有する自動
現像機用洗浄剤が一部で使われているが、これでも洗浄
性は不十分であった。しかもこれら洗浄剤のpHは1以
下であるため、ステンレス製の現像槽やスプレーパイプ
が腐食されるという問題もあった。Therefore, cleaning agents for automatic processors containing strong acids such as sulfuric acid and hydrochloric acid have been used in some cases, but even these agents have insufficient cleaning properties. Moreover, since the pH of these cleaning agents is less than 1, there is also the problem that stainless steel developer tanks and spray pipes are corroded.
そこで本発明の目的はPS版の自動現像機の洗浄を容易
にする洗浄剤および洗浄方法を提供することであり、更
に詳しくはステンレスなどの自動現像機の部材を侵すこ
とのない洗浄液および洗浄方法を提供することである。Therefore, an object of the present invention is to provide a cleaning agent and a cleaning method that facilitate the cleaning of an automatic processor for PS plates, and more specifically, a cleaning agent and a cleaning method that do not attack the parts of the automatic processor such as stainless steel. The goal is to provide the following.
本発明者等は、上記問題点を解決すべく鋭意検討した結
果、微量の弗化水素酸またはその塩を含有する。洗浄液
が上記目的を達成する上で極めて有効であることを見出
し、本発明を完成するに至った。As a result of intensive studies by the present inventors to solve the above problems, the composition contains a trace amount of hydrofluoric acid or a salt thereof. The inventors have discovered that a cleaning liquid is extremely effective in achieving the above object, and have completed the present invention.
即ち、本発明は弗化水素酸もしくは弗酸塩の中から選ば
れた少くとも一種の弗素化合物を0.005〜5重量%
含有することを特徴とする、平版印刷版製版用自動現像
機およびその部材を洗浄するための洗浄液を提供するも
のである。That is, the present invention contains 0.005 to 5% by weight of at least one fluorine compound selected from hydrofluoric acid or fluorine salts.
The present invention provides a cleaning liquid for cleaning an automatic developing machine for planographic printing plate making and its members, which is characterized by containing:
本発明はまた、弗化水素酸もしくは弗酸塩の中から選ば
れた少くとも一種の弗素化合物を0.005〜5重量%
と少くとも一種の有機酸を含有することを特徴とする、
平版印刷版製版用自動現像機およびその部材を洗浄する
ための洗浄液を提供するものである。The present invention also provides 0.005 to 5% by weight of at least one fluorine compound selected from hydrofluoric acid or fluorine salts.
and at least one organic acid,
The present invention provides an automatic developing machine for planographic printing plate making and a cleaning liquid for cleaning its members.
本発明はさらに上記洗浄液を用いることを特徴とする、
平版印刷版製版用自動現像機およびその部材の洗浄方法
を提供するものである。The present invention is further characterized in that the above-mentioned cleaning liquid is used.
The present invention provides an automatic developing machine for planographic printing plate making and a method for cleaning its members.
本発明の洗浄液を特徴づける弗素化合物のうち、弗化水
素酸としては、弗化水素酸そのもの、またはヘキサフル
オロジルコン酸、ヘキサフルオロバナジン酸、テトラフ
ルオロタングステン酸、ヘキサフルオロチタン酸、ヘキ
サフルオロコバルト酸、ヘキサフルオロ硼素酸およびテ
トラフルオロ亜鉛酸などに含まれる遊離の弗化水素酸が
用いられる。Among the fluorine compounds that characterize the cleaning solution of the present invention, examples of hydrofluoric acid include hydrofluoric acid itself, hexafluorozirconic acid, hexafluorovanadic acid, tetrafluorotungstic acid, hexafluorotitanic acid, and hexafluorocobaltic acid. Free hydrofluoric acid contained in hexafluoroboric acid, tetrafluorozinc acid, and the like is used.
このうち、ヘキサフルオロジルコン酸やヘキサフルオロ
硼素酸が取扱い上安全で好ましい。更に弗酸塩としては
、弗化ナトリウム、弗化カリウム、弗化リチウム、弗化
カルシウム、弗化マグネシウム、弗化アンモニウム、弗
化水素カリウム、弗化水素ナトリウムおよび弗化水素ア
ンモニウムなどが挙げられる。Among these, hexafluorozirconic acid and hexafluoroboric acid are safe and preferred in terms of handling. Furthermore, examples of the fluoride salt include sodium fluoride, potassium fluoride, lithium fluoride, calcium fluoride, magnesium fluoride, ammonium fluoride, potassium hydrogen fluoride, sodium hydrogen fluoride, and ammonium hydrogen fluoride.
洗浄剤中の弗素化合物の好ましい濃度は0.005〜5
重量%であり、更に好ましくは0.01〜1重量%であ
る。これよりも低い濃度では洗浄効果が十分得られず、
また、これよりも高い濃度では洗浄効果が飽和してしま
い、また、その毒性に留意する必要があり、特に、洗浄
後の水洗水が多量に必要となり、その廃液処理コストが
大きくなってしまう。The preferred concentration of fluorine compounds in the cleaning agent is 0.005-5
It is % by weight, more preferably 0.01 to 1% by weight. If the concentration is lower than this, the cleaning effect will not be sufficient.
Furthermore, if the concentration is higher than this, the cleaning effect will be saturated, and it is necessary to pay attention to its toxicity.In particular, a large amount of rinsing water will be required after cleaning, and the cost for processing the waste liquid will increase.
更に本発明の洗浄剤には、pHを酸性に保ち、洗浄力を
強化するため、有機酸や無機酸などの酸性物質を併用す
ることができる。ただし、ステンレスが腐蝕されないよ
う、pH1以上が好ましく、この為には有機酸を使用す
るのが有利である。Further, the cleaning agent of the present invention may contain an acidic substance such as an organic acid or an inorganic acid in order to maintain the pH at an acidic level and strengthen the cleaning power. However, in order to prevent corrosion of stainless steel, the pH is preferably 1 or more, and for this purpose it is advantageous to use an organic acid.
また有機酸を併用することにより、弗化物の濃度を低く
しても強い洗浄力を持たせることができる。これに用い
られる有機酸としては、シュウ酸、クエン酸、酢酸、ヒ
ドロキシ酢酸、酒石酸、マレイン酸、リンゴ酸、コハク
酸、アジピン酸、アゼライン酸、セパチン酸、ピメリン
酸、レブリン酸、乳酸、ゲルタール酸、マロン酸、フマ
ール酸、イタコン酸、プロパントリカルボン酸、蟻酸、
酪酸、フミン酸、フィチン酸および5−スルホサリチル
酸などが挙げられる。Further, by using an organic acid in combination, strong cleaning power can be provided even if the concentration of fluoride is lowered. Organic acids used for this include oxalic acid, citric acid, acetic acid, hydroxyacetic acid, tartaric acid, maleic acid, malic acid, succinic acid, adipic acid, azelaic acid, cepacic acid, pimelic acid, levulinic acid, lactic acid, and geltaric acid. , malonic acid, fumaric acid, itaconic acid, propanetricarboxylic acid, formic acid,
Examples include butyric acid, humic acid, phytic acid and 5-sulfosalicylic acid.
また、3.3−ジホスホノペンタンージカルボン酸、ア
ミノトリ (メチレンホスホン酸)、メチレンジホスホ
ン酸、l−ヒドロキシエタン1.1=ジホスホン酸、2
−アミノ−2−メチル−1−ヒドロキシプロパン−1,
1−ジホスホン酸、2−ホスホノブタントリカルボン酸
−1,2,4ニトリロトリホスホン酸、N−カルボキシ
メチルアミノ−N、N−ジ(メチレンホスホン酸)およ
びヘキサメチレンジアミン−テトラ(メチレンホスホン
酸)などの有機ホスホン酸も用いられる。Also, 3.3-diphosphonopentane dicarboxylic acid, aminotri(methylenephosphonic acid), methylene diphosphonic acid, l-hydroxyethane 1.1=diphosphonic acid, 2
-amino-2-methyl-1-hydroxypropane-1,
1-diphosphonic acid, 2-phosphonobutanetricarboxylic acid-1,2,4 nitrilotriphosphonic acid, N-carboxymethylamino-N,N-di(methylenephosphonic acid) and hexamethylenediamine-tetra(methylenephosphonic acid), etc. Organic phosphonic acids are also used.
更に無機酸としては、塩酸、硫酸、硝酸、リン酸、塩素
酸、過塩素酸、亜硫酸、チオ硫酸、パーオキシ硫酸、亜
硝酸、亜リン酸、メタリン酸、ピロリン酸、バナジン酸
、およびタングステン酸が用いられる。Further inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, chloric acid, perchloric acid, sulfurous acid, thiosulfuric acid, peroxysulfuric acid, nitrous acid, phosphorous acid, metaphosphoric acid, pyrophosphoric acid, vanadic acid, and tungstic acid. used.
これらの酸性物質のうち、有機酸はステンレスの腐食が
少ないので特に好ましい。特に好ましいのはシュウ酸、
クエン酸である。これらの酸性物質の洗浄液への好まし
い添加量は0.01〜IO重量%であり、更に好ましく
は、0.5〜5重量%である。Among these acidic substances, organic acids are particularly preferred because they cause less corrosion of stainless steel. Particularly preferred is oxalic acid,
It is citric acid. The amount of these acidic substances added to the cleaning solution is preferably 0.01 to IO% by weight, more preferably 0.5 to 5% by weight.
本発明の洗浄液には更に、界面活性剤、有機溶剤、染料
および消泡剤を添加することができる。A surfactant, an organic solvent, a dye, and an antifoaming agent can be further added to the cleaning solution of the present invention.
このうち、界面活性剤が洗浄作用を促進する上で有効で
あり、ノニオン型界面活性剤、アニオン型界面活性剤な
どが好ましく用いられる。好ましいノニオン型面活性剤
としては、ポリオキシエチレンアルキルフェニルエーテ
ル、ポリオキシエチレンポリオキシプロピレンブロック
ポリマーである。Among these, surfactants are effective in promoting the cleaning action, and nonionic surfactants, anionic surfactants, and the like are preferably used. Preferred nonionic surfactants include polyoxyethylene alkylphenyl ether and polyoxyethylene polyoxypropylene block polymer.
界面活性剤の好ましい添加量は、洗浄液全量に対して、
0.0001〜5重量%であり、特に好ましい範囲は0
.005〜1重量%である。The preferred amount of surfactant added is:
It is 0.0001 to 5% by weight, and a particularly preferable range is 0.0001 to 5% by weight.
.. 0.005 to 1% by weight.
本発明の洗浄液は濃厚液として調製しておき、使用前に
適当な濃度に希釈して使用することもできる。The cleaning solution of the present invention can be prepared as a concentrated solution and diluted to an appropriate concentration before use.
本発明の洗浄液を用いて、28版の自動現像機を洗浄す
る方法としては、現像液を排出した後必要に応じて水洗
してから本洗浄液を自動現像機の現像部に仕込んで、温
度lO℃〜45℃、好ましくは20℃〜35℃で10分
〜60分間洗浄液を循環する方法がとられる。また、こ
の方法で洗浄液に浸りにくい部材や特に汚れの堆積が激
しい部材については、その部材を取り外して洗浄するこ
ともできる。特に、特開昭58−95349号公報記載
の補充装置を装備した自動現像機の補充コントロールセ
ンサーには、汚れが固着して補充異常をひき起こすこと
があるが、このセンサーを取り外して本発明の洗浄液に
約20分間浸漬することにより、汚れがきれいに除去で
きて元通り補充コントロールを正確に行えるようにでき
る。A method for cleaning a 28-plate automatic processor using the cleaning solution of the present invention is to drain the developer, wash with water if necessary, and then charge the cleaning solution into the developing section of the automatic processor at a temperature of lO A method is used in which the cleaning solution is circulated at a temperature of 10 to 60 minutes at a temperature of 10 to 45 degrees Celsius, preferably 20 to 35 degrees Celsius. In addition, with this method, members that are difficult to soak in the cleaning liquid or members that have a particularly large accumulation of dirt can be removed and cleaned. In particular, dirt may stick to the replenishment control sensor of an automatic processor equipped with the replenishment device described in JP-A-58-95349, causing replenishment abnormalities. By immersing it in the cleaning solution for about 20 minutes, dirt can be thoroughly removed and replenishment control can be performed accurately.
更に本発明の洗浄液は、自動現像機の現像浴の洗浄だけ
でなく、水洗浴、リンス浴、保護ガム浴など自動現像機
を構成する各浴の洗浄にも好適に用いることができる。Further, the cleaning liquid of the present invention can be suitably used not only for cleaning the developing bath of an automatic developing machine, but also for cleaning each bath constituting the automatic developing machine, such as a water washing bath, a rinsing bath, and a protective gum bath.
以下、実施例により本発明をより具体的に説明する。し
かし、本発明は以下の具体例により何等制限されるもの
ではない。Hereinafter, the present invention will be explained in more detail with reference to Examples. However, the present invention is not limited in any way by the following specific examples.
実施例1
砂目室て処理したlSS材用ルミニウム板40℃に保っ
た2重量%の水酸化す) +Jウム溶液に1分間浸漬し
、エツチング処理を行った。次いで水洗機硫酸−クロム
酸混液に約1分間浸漬して純アルミニウム表面を露出さ
せた。これを30℃に保った20重量%の硫酸中に浸漬
し、直流電圧15V、電流密度2A/dm”で3分間陽
極酸化処理を行い、水洗、乾燥した。かくして処理した
アルミニウム板上に、下記組成の感光性組成物溶液を2
g/m’(乾燥重量)となるように塗布し、乾燥してP
S版を得た。Example 1 A aluminum plate for ISS material treated in a grain chamber was immersed for 1 minute in a 2% by weight hydroxide solution kept at 40°C to perform etching treatment. Next, the pure aluminum surface was exposed by immersing it in a water washer sulfuric acid-chromic acid mixture for about 1 minute. This was immersed in 20% by weight sulfuric acid kept at 30°C, anodized for 3 minutes at a DC voltage of 15V and a current density of 2A/dm, washed with water, and dried. A photosensitive composition solution of the composition 2
g/m' (dry weight), dry and P
I got the S version.
日豆化既上栗■裂J
メチルエチルケトン ・・・・・・50gシ
クロヘキサノン ・・・・・・40gこの
ようにして得られたポジ型PS版を透明陽画フィルムを
通して3KHのメタルハライドランプを用いて60秒間
露光した。Methyl ethyl ketone...50 g Cyclohexanone...40 g The positive PS plate thus obtained was exposed through a transparent film for 60 seconds using a 3KH metal halide lamp. did.
次に下記に示すような自動現像機、現像液およびリンス
液を用いて現像処理を行った。Next, development processing was performed using an automatic developing machine, a developer, and a rinsing solution as shown below.
(1)自動現像機
現像浴とそれに続くリンス浴を備え、露光済みのPS版
を水平搬送する駆動装置と、各処理浴の処理液を貯溜槽
→ポンプ−スプレーノズル−貯溜槽と循環させる装置お
よび現像浴への補充装置を有する自動現像機であり、現
像浴の貯溜槽はオーバー70−により過剰の処理液を排
出する機構となっている。(1) Automatic processor Equipped with a developing bath and a subsequent rinsing bath, a drive device that horizontally transports the exposed PS plate, and a device that circulates the processing solution of each processing bath from storage tank to pump to spray nozzle to storage tank. This is an automatic developing machine having a replenishing device for the developing bath, and the developing bath storage tank has a mechanism for discharging excess processing liquid through an over 70-.
この場合の現像液の補充は、現像浴の途中の位置にPS
版感光層の非画像部感光層の溶出度合を測定するセンサ
ーを設け、溶出度合が所定のレベルに低下した時に自動
的に一定量の現像補充液が補充される機構となっている
。In this case, to replenish the developer, place a PS in the middle of the developer bath.
A sensor is provided to measure the degree of elution of the photosensitive layer in the non-image area of the plate photosensitive layer, and a certain amount of developer replenisher is automatically replenished when the degree of elution falls to a predetermined level.
(2)現像液
下記現像液原液を水にて7倍希釈しその211を上記現
像浴に仕込んだ。現像液のpHは13.9であった。(2) Developer Solution The following developer solution stock solution was diluted 7 times with water, and 211 was added to the above developer bath. The pH of the developer was 13.9.
JIS3号珪酸す) IJウム水溶液 ・・・・・・3
32g水酸化カリウム(48重量%水溶液)・・・19
1g純 水
・・・・・・688 g(3)現像補充液
補充検出センサーの測定値に基き、下記組成の補充液原
液と水とを1:4の割合で混合し、必要量補充した。JIS No. 3 silicate) IJum aqueous solution...3
32g potassium hydroxide (48% by weight aqueous solution)...19
1g pure water
...688 g (3) Based on the measured value of the developer replenisher replenishment detection sensor, a replenisher stock solution with the following composition and water were mixed at a ratio of 1:4, and the required amount was replenished.
(組 成)
JIS3号珪酸す) IJウム水溶液 ・・・・・・2
38g水酸化カリウム(48重量%水溶液)・・・・3
28g純 水 ・
・・・・・645 g(4)界面活性剤を含むリンス液
下記組成からなるリンス液(pH約6.0)8βをリン
ス浴に仕込んだ。リンス浴は1週間毎に新液と交換した
。(Composition) JIS No. 3 silicate) IJum aqueous solution...2
38g potassium hydroxide (48% by weight aqueous solution)...3
28g pure water ・
...645 g (4) Rinse liquid containing surfactant A rinse liquid (pH approximately 6.0) 8β having the following composition was charged into a rinse bath. The rinse bath was replaced with fresh solution every week.
(組 成)
リン酸(85重量%水溶液) ・・・・・・2.4
g水酸化ナトリウム ・・・・・・・・1
g水
・・・・985 g以上の条件で1003mmX800
mmのサイズのPS版を毎日35枚ずつ3週間処理を行
ったところ、現像液の能力が低下したので、現像液を新
液に交換し同様の処理を続けた。3週間を1ラウンドと
して、10ラウンドが終了した時点で現像浴槽に汚れが
目立ってきた。また補充検出センサーにも汚れが付着し
たためか、補充がやや不安定となる傾向にあった。そこ
で下記組成の自動現像機洗浄液Aを準備した。pHは2
.0を示した。(Composition) Phosphoric acid (85% by weight aqueous solution) 2.4
g Sodium hydroxide ・・・・・・・・・1
g water
...1003mm x 800 under conditions of 985 g or more
When processing 35 mm-sized PS plates every day for 3 weeks, the capacity of the developer decreased, so the developer was replaced with a new solution and the same processing was continued. One round was three weeks long, and after the 10th round, dirt became noticeable in the developing bath. Additionally, the replenishment detection sensor tended to become somewhat unstable, probably due to dirt attached to it. Therefore, automatic processor cleaning solution A having the following composition was prepared. pH is 2
.. It showed 0.
(組 成)
シュウ酸・・・=20 g
純 水 ・・・・・・1.
000g自動現像機から現像液を排出した後、水を約2
01入れて予備水洗し、水洗水を排出してから、前述の
洗浄液Aを201現像浴に満たし、これを室温で約30
分間循環した。洗浄液Aを回収した後、水約201で後
水洗した。これにより現像浴の各所に付着していた汚れ
が溶解除去された。(Composition) Oxalic acid...=20 g Pure water...1.
After draining the developer from the 000g automatic developing machine, add approximately 2.0 g of water.
01, pre-rinsed with water, drained the washing water, filled the 201 developing bath with the above-mentioned cleaning solution A, and heated it at room temperature for about 30 min.
It circulated for minutes. After collecting the cleaning liquid A, it was washed with about 20 liters of water. As a result, the stains adhering to various parts of the developing bath were dissolved and removed.
またこの洗浄作業の間、補充検出センサーを取り外して
プラスチック製の容器に入れた洗浄液入に室温で約20
分間浸漬したところ、ステンレスのきれいな面が現われ
た。センサーを水洗後その電気抵抗を測定したところ、
洗浄前よりも下がって未使用センサーの抵抗値と同じ値
を示した。Also, during this cleaning process, remove the replenishment detection sensor and add it to the cleaning solution container in a plastic container for approximately 20 minutes at room temperature.
After soaking for a minute, a clean stainless steel surface appeared. After washing the sensor with water, we measured its electrical resistance.
The resistance value was lower than before cleaning, and the resistance value was the same as that of an unused sensor.
比較例−1
下記組成の洗浄液Bを準備した。pHは1.0以下であ
った。Comparative Example-1 Cleaning liquid B having the following composition was prepared. The pH was below 1.0.
(組 或)
リン酸(85%) ・・・・・・・・・・70g
塩酸(36%) ・・・・・・・・・・54g純
水 ・・・・・・1.0
0 0 g洗浄液Aのかわりに洗浄液Bを用いた以外
は実施例1と全く同じ処理を行ったところ約30分間の
循環洗浄では自動現像機の汚れは完全には除去できず、
かなり残っていた。そこで更に約30分間循環洗浄した
ところ、汚れの付着量はやや減少したものの、まだ完全
には洗浄できていなかった。(Group or) Phosphoric acid (85%) 70g
Hydrochloric acid (36%) ・・・・・・・・・54g Pure water ・・・・・・1.0
When the same process as in Example 1 was carried out except that cleaning liquid B was used instead of cleaning liquid A, the stains on the automatic developing machine could not be completely removed by circulating cleaning for about 30 minutes.
There was quite a bit left. Then, when circulating cleaning was continued for about 30 minutes, the amount of dirt adhered to the surface decreased slightly, but it was still not completely cleaned.
しかし、現像浴のステンレス材部が洗浄剤已による腐食
のため褐色に変色しはじめたので洗浄を中止した。次に
補充検出センサーを洗浄液已に室温で約20分間浸漬し
たが、ステンレスに付着した汚れの除去は不十分であり
洗浄後の抵抗値も未使用センサーの値まで回復させるこ
とができなかった。However, the stainless steel part of the developing bath began to turn brown due to corrosion from the cleaning agent, so cleaning was discontinued. Next, the replenishment detection sensor was immersed in the cleaning solution at room temperature for about 20 minutes, but the removal of the stains adhering to the stainless steel was insufficient and the resistance value after cleaning could not be restored to the value of the unused sensor.
実施例2
下記組成の洗浄液Cを準備した。p)lは2.5を示し
た。Example 2 A cleaning liquid C having the following composition was prepared. p) l showed 2.5.
洗浄液Aの代りに上記洗浄液Cを用いたほかは実施例1
と全く同じ処理を行ったところ、実施例1と同様の洗浄
効果が得られた。Example 1 except that the above cleaning liquid C was used instead of cleaning liquid A.
When the same treatment as in Example 1 was performed, the same cleaning effect as in Example 1 was obtained.
(発明の効果)
本発明によれば、自動現像機の洗浄を容易に行うことが
でき、しかも洗浄液による部材の腐食を極めて低く抑え
ることができる。(Effects of the Invention) According to the present invention, it is possible to easily clean an automatic developing machine, and corrosion of members caused by cleaning liquid can be suppressed to an extremely low level.
さらに、有機酸を併用することにより、洗浄力を低下さ
せることなく、洗浄液の部材腐食性を一層低減するとか
できる。Furthermore, by using an organic acid in combination, it is possible to further reduce the corrosivity of the cleaning liquid to components without reducing the cleaning power.
Claims (4)
とも一種の弗素化合物を0.005〜5重量%含有する
ことを特徴とする、平版印刷版製版用自動現像機および
その部材を洗浄するための洗浄液。(1) An automatic developing machine for lithographic printing plate making, which is characterized by containing 0.005 to 5% by weight of at least one kind of fluorine compound selected from hydrofluoric acid or fluorine salts, and its members. Cleaning liquid for cleaning.
とも一種の弗素化合物を0.005〜5重量%と、少く
とも一種の有機酸を含有することを特徴とする、平版印
刷版製版用自動現像機およびその部材を洗浄するための
洗浄液。(2) Lithographic printing characterized by containing 0.005 to 5% by weight of at least one fluorine compound selected from hydrofluoric acid or fluorine salts and at least one organic acid. A cleaning liquid for cleaning automatic plate-making machines and their parts.
、平版印刷版製版用自動現像機およびその部材の洗浄方
法。(3) A method for cleaning an automatic developing machine for planographic printing plate making and its members, characterized by using the cleaning liquid according to claim 1.
、平版印刷版製版用自動現像機およびその部材の洗浄方
法。(4) A method for cleaning an automatic developing machine for planographic printing plate making and its members, characterized by using the cleaning liquid according to claim 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63142393A JP2533792B2 (en) | 1988-06-09 | 1988-06-09 | Cleaning solution for automatic developing machine for lithographic printing plate making and cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63142393A JP2533792B2 (en) | 1988-06-09 | 1988-06-09 | Cleaning solution for automatic developing machine for lithographic printing plate making and cleaning method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01310356A true JPH01310356A (en) | 1989-12-14 |
JP2533792B2 JP2533792B2 (en) | 1996-09-11 |
Family
ID=15314314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63142393A Expired - Fee Related JP2533792B2 (en) | 1988-06-09 | 1988-06-09 | Cleaning solution for automatic developing machine for lithographic printing plate making and cleaning method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2533792B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0618506A1 (en) * | 1993-03-31 | 1994-10-05 | Morton International, Inc. | Stripping solution for photopolymerised resist stencils |
JP2006080501A (en) * | 2004-08-10 | 2006-03-23 | Toshiba Corp | Cleaning solution and method of cleaning semiconductor substrate |
US7896970B2 (en) | 2004-08-10 | 2011-03-01 | Kabushiki Kaisha Toshiba | Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process |
CN103046061A (en) * | 2012-12-22 | 2013-04-17 | 黄山金瑞泰科技有限公司 | Cleaning agent for development equipment and use method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107478A (en) * | 1973-02-15 | 1974-10-12 |
-
1988
- 1988-06-09 JP JP63142393A patent/JP2533792B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107478A (en) * | 1973-02-15 | 1974-10-12 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0618506A1 (en) * | 1993-03-31 | 1994-10-05 | Morton International, Inc. | Stripping solution for photopolymerised resist stencils |
US5529887A (en) * | 1993-03-31 | 1996-06-25 | Morton International, Inc. | Water soluble fluoride-containing solution for removing cured photoresist and solder resist mask |
JP2006080501A (en) * | 2004-08-10 | 2006-03-23 | Toshiba Corp | Cleaning solution and method of cleaning semiconductor substrate |
US7896970B2 (en) | 2004-08-10 | 2011-03-01 | Kabushiki Kaisha Toshiba | Semiconductor substrate cleaning liquid and semiconductor substrate cleaning process |
CN103046061A (en) * | 2012-12-22 | 2013-04-17 | 黄山金瑞泰科技有限公司 | Cleaning agent for development equipment and use method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2533792B2 (en) | 1996-09-11 |
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