JPH01309959A - Functional deposit film-forming device by sputtering method - Google Patents

Abstract

PURPOSE:To form a uniform and homogeneous deposit film on a base body surface having fine pores by using a combination of a cylindrical target and a plate like target as a target for film-forming material at the time of forming a functional deposit film on the base body surface by a sputtering method. CONSTITUTION:A holder 5 to which a base body 6 to be subjected to functional deposit film formation is attached is fixed to the inside of a vacuum vessel, and a cylindrical target 1 is disposed in front of the above holder 5 and also a plate like target 1' is disposed so that it closes one opening of the target 1. After the inside of the vacuum tank is evacuated, a sputtering gas, such as Ar, is supplied through an inlet valve 11, and then, a high-frequency voltage is impressed from an electric power source 7 on the cylindrical target 1 and also a high-frequency voltage is impressed by means of an electric power source 7' on the plate like target 1', by which a high-density plasma is produced in the cylindrical target 1. By this method, Ar ions in the plasma are allowed to sputter both targets 1, 1', and the uniform and homogeneous deposit film can be formed on the surface of the base body 6.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to an improvement of a functional deposited film forming apparatus using a sputtering method. More specifically, the present invention relates to an apparatus for forming a functional deposited film using a sputtering method, which includes a cylindrical film-forming raw material target and a flat film-forming raw material target.

[Description of prior art]

In recent years, in multilayer film formation in semiconductor processes, lower temperatures and less damage during film formation are required for device characteristics, and research and development has been carried out to meet these demands. Under these circumstances, the so-called facing target sputtering method is attracting attention. FIG. 4 shows a conventional facing target sputtering method. In this method, between the opposing targets (102 and 102)
A magnetic field 101 is applied approximately perpendicularly. Therefore, electrons in the plasma are captured by the magnetic field, increasing the plasma density.

The substrate 104 to be deposited is the target 102.10.
Since it is installed away from the plasma generation area between the two, it has the advantage that the base body is not exposed to plasma. In addition, since the sputtered particles are obliquely incident, if the step on the surface of the substrate has a small aspect ratio, good step coverage can be achieved, and
Since it is possible to discharge up to 1000 nm, it has advantages such as less contamination of impurities into the film.

However, the above conventional method has the following problems.

That is, (1) When processing a circular substrate such as a Si wafer in a single wafer process, it is necessary to sufficiently increase the target area or rotate the wafer in order to improve the film thickness distribution. In addition, (2) since the direction of incidence of sputtered particles is almost limited to a plane perpendicular to the two coupe nodules and oblique to the substrate, it is possible to Modification differs depending on the pore surface,
There are many cases where the etching speed becomes uneven.
To solve this problem, it is necessary to rotate the base body. Further, although it is possible to discharge at an i31 level of 10-'Torr, it is impossible to discharge at a level of 10-'Torr in a higher vacuum.

[Purpose of the invention]

The present invention eliminates the two problems of the conventional facing target sputtering method in a film deposition apparatus, and deposits micropores in a desired state on the surface of a film-forming substrate having micropores. The main purpose is to provide a device that enables the formation of a homogeneous deposited film with uniform characteristics.

Another object of the present invention is to control the direction and number of flying sputtered particles by controlling the direction and number of flying sputtered particles, and applying the film-forming material target to the surface of the film-forming substrate having micropores. It is an object of the present invention to provide an apparatus that enables the formation of a highly versatile functional deposited film by filling the micropores with a film deposited in a desired state.

[Structure and effects of the invention]

The present invention eliminates the above-mentioned problems in the conventional deposited film forming apparatus using the sputtering method and achieves the above object. Functional compost M
This is an i-film forming device.

That is, "a film-forming raw material target (A) with a cylindrical inner surface and a film-forming raw material target (B) with a flat plate-like inner surface are provided in a film-forming chamber, and the target (B) is connected to one opening of the target (A). The base body is provided perpendicularly to the cough central axis at a position extending from the apparent central axis of the target (A), and the diameter of the target (A) is and means for controlling the number of sputtered particles flying from the targets (A) and (B) toward the surface of the substrate at l.

The apparatus of the present invention having such a configuration improves the film thickness distribution, and also increases the plasma density in the space surrounded by the cylindrical film-forming raw material target and the flat film-forming raw material target, thereby increasing the film-forming rate. It also enables discharge in a high vacuum region (10-' Torr range), and allows the incident direction of sputtered particles to fly from the entire circumference direction and from the direction perpendicular to the substrate.

Furthermore, according to the apparatus of the present invention, since a cylindrical film-forming raw material target amount and a flat film-forming raw material target are used in a magnetic field applied in one direction, the film thickness distribution of the deposited film is The aspect ratio is improved by not rotating the substrate, and the plasma is generated at a higher density, and the sputtered particles are completely incident and perpendicularly incident on the surface of the substrate from the entire circumferential direction of the upper space of the substrate. The film can be deposited without depending on the direction of the stepped shape on the substrate surface, and a desired film with high versatility can be formed at a high film deposition rate.

The apparatus of the present invention will be explained below with reference to the embodiments shown in FIGS. 1 to 3. FIG.

The apparatus of the present invention has the configuration shown in FIGS. 1 and 2 (
Hereinafter, this will be referred to as "device example 1." ) or the configuration shown in FIG. 3 (hereinafter referred to as "device example 2"). However, these are only examples, and the present invention is not limited to these examples.

Figure 1 shows an example of a functional deposited film forming apparatus using the sputtering method of the present invention, and Figure 2 shows the configuration of a cylindrical film-forming raw material target in the apparatus shown in Figure 1. is schematically shown.

In FIGS. 1 and 2, 1 is a cylindrical film-forming raw material target provided in a vacuum container, and 1' is a flat film-forming raw material target 7), which is located at one side of the target l. The target plate is provided so as to close the opening and form a plasma generation space inside. As shown in FIG. 2, the cylindrical target 1 includes a water-cooled jacket 4 provided to cover the outer circumferential surface of the target laser I, and a permanent magnet provided to cover the outer circumferential surface of the water-cooled jacket. It has 2. Further, the flat target plate is also provided with a water-cooled pipe 4' covering the outer surface thereof. 5 is a substrate holder that holds the substrate 6, and includes heating means (for heating or cooling the substrate).
(heater) or cooling means (currently not shown).

The base 6 is installed on the surface of the base holder at a position that is an extension of the apparent central axis of the cylindrical target 1 and perpendicular to the central axis.

Reference numerals 7 and 7' denote power supply systems that apply RF power to the cylindrical target 1 and the flat target 1', respectively. Reference numeral 10 denotes an exhaust valve provided in an exhaust pipe, one end of which is connected to the turbomolecular pump 8 and the rotary pump 9 and opened to the outside of the system, and the other end of which is opened to the vacuum vessel. Reference numeral 11 denotes a gas introduction valve provided in a sputtering gas introduction pipe whose one end communicates with a sputtering gas supply source and whose other end opens into the vacuum container. 3 is a shield plate that shields the plasma generation space formed by being surrounded by the three targets 1 and 1'.

Deposited film formation by apparatus example 1 configured as described above is as follows:
For example, this is done as follows. That is, the exhaust pump (
After sufficiently evacuating the inside of the vacuum chamber by operating the turbo molecular pump 8 and/or rotary pump 9), a sputtering gas such as Ar gas is introduced from the gas introduction pipe through the gas introduction valve 11 until the pressure within the chamber is 102. ~IO-'Torr level is introduced.

High frequency power is applied to the cylindrical target 1 from a high frequency power source 7, and a high frequency power source 7' is also applied to the flat target 1'.
When higher frequency power is applied, plasma is generated within the cylindrical target 1. Electrons in the generated plasma are captured by the magnetic field applied by the permanent magnet 2, and a magnetron discharge is generated on the flat target 1' to generate high-density plasma. Further, positive ions in the plasma, such as Ar', are accelerated by a sheath near the targets and sputter both targets, and the spuck particles fly onto the surface of the substrate 6, resulting in the formation of a film deposit thereon. The resulting deposited film is homogeneous with a uniform thickness and has uniform properties. In addition, by adjusting the applied power to the flat target 1' side, the number of particles incident on the substrate 6 from the vertical direction can be controlled.
At the same time, by controlling the number of spackle particles incident from the cylindrical target 1 in an oblique direction, it becomes possible to form a film in an appropriate amount depending on the aspect ratio of the micropores on the substrate.

FIG. 3 shows a rotary arm 12 in which a permanent magnet 2 provided outside a cylindrical target l is connected to a drive motor 13 in the device example 1 shown in FIGS. 1 and 2. if
This is another example of the 'AU of the present invention, which is configured to be attached to a 4Q stone and rotated during film formation.

According to the device example 2, the magnetic field forming the lines of magnetic force is changed in the circumferential direction of the cylindrical target 1, thereby improving target efficiency and forming a desired deposited film at a high film deposition rate.

Further, in the device example 2, the flat target 1' can be rotated in the same manner as the cylindrical target 1, and in that case, the above-mentioned effects are further improved.

In either case of device examples 1 and 2 explained above,
It is possible to perform bias sputtering by applying RF power to the side of the base 6 to form a sheath potential near the surface of the base 6.

Furthermore, in both apparatus examples 1 and 2, if the film formation target used is a dielectric material such as metal, it is possible to use a DC power source as the plasma generation power source. Effects of the Invention [IQ] The apparatus of the present invention improves the film thickness distribution and further increases the plasma density in the space surrounded by the cylindrical film-forming raw material target and the flat film-forming raw material target to form a film. A device that improves speed, enables discharge in a high vacuum region (10-' Torr level), and allows sputtered particles to fly in the direction of incidence from all around the circumference and perpendicular to the substrate. It is.

Furthermore, according to the apparatus of the present invention, since a cylindrical film-forming raw material target and a flat film-forming raw material target are used in a magnetic field applied in one direction, the film thickness distribution of the deposited film is different from that of the substrate. This is improved by eliminating rotation, and plasma is generated at a higher density, and the flying spuck particles are completely incident and perpendicularly incident on the surface of the substrate from the entire circumferential direction of the upper space of the substrate, so the aspect ratio is improved. The film can be deposited without depending on the direction of the step shape on the surface of the substrate, and a desired film with great versatility can be formed at a high film deposition rate.

[Brief explanation of the drawing]

FIG. 1 schematically shows an example of a functional deposited film forming apparatus using the sputtering method of the present invention, and FIG.
FIG. 2 is an explanatory diagram of the configuration of a cylindrical film-forming source r [target in the apparatus of FIG. 1]. FIG. 3 schematically shows another example of the functional deposited film forming apparatus using the sputtering method of the present invention. FIG. 4 schematically shows a deposited film forming apparatus using a conventional facing target sputtering method. 1 to 3, 1... Cylindrical film forming raw material target, 1'... Flat film forming material target, 2... Permanent magnet, 3... Shield plate, 4 .4'
. . . Water cooling jacket, 5 . . . Substrate holder equipped with heating means and cooling means for the substrate, 6 . . . Substrate, 7
．． 7'...RF (high frequency) power supply, 8...Turbo molecular pump, 9...Rotary pump, ]0...Exhaust valve, 11...Gas 4-person valve, 12...Magnet rotating arm , 13... Drive motor 6 Regarding FIG. 4, 101... Applied magnetic field, 102...
Target, 103... Shield plate, 104... Substrate, 105... Heater, 106... High frequency power supply, 107... Exhaust valve, 108... Gas introduction valve. % 2 L

Claims (3)

[Claims] (1) An apparatus for forming a functional deposited film using a sputtering method, which includes a film-forming raw material target (A) with a cylindrical inner surface and a flat film-forming raw material target (B) in a film-forming chamber. B) is provided to close one opening of the target (A), and the base is provided at a position extending from the apparent central axis of the target (A) perpendicular to the central axis. and comprising means for generating lines of magnetic force parallel to the diameter of the target (A),
An apparatus for forming a functional deposited film using a sputtering method, comprising means for controlling the number of sputtered particles flying from the targets (A) and (B) toward the surface of the substrate. (2) The apparatus according to claim 1, further comprising means for rotating lines of magnetic force parallel to the diameter of the target (A) in the circumferential direction of the target (A). (3) The method according to claim 1, further comprising means for fixing the lines of magnetic force so as to be parallel to the diameter of the target (A), and means for rotating the targets (A) and (B). equipment.