JPH01309201A - Luminous diode lighting apparatus - Google Patents
Luminous diode lighting apparatusInfo
- Publication number
- JPH01309201A JPH01309201A JP63138995A JP13899588A JPH01309201A JP H01309201 A JPH01309201 A JP H01309201A JP 63138995 A JP63138995 A JP 63138995A JP 13899588 A JP13899588 A JP 13899588A JP H01309201 A JPH01309201 A JP H01309201A
- Authority
- JP
- Japan
- Prior art keywords
- recesses
- metal base
- emitting diode
- light
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 29
- 238000007373 indentation Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920003020 cross-linked polyethylene Polymers 0.000 description 1
- 239000004703 cross-linked polyethylene Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Fastening Of Light Sources Or Lamp Holders (AREA)
- Lighting Device Outwards From Vehicle And Optical Signal (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Securing Globes, Refractors, Reflectors Or The Like (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
童呈上生肌尻分互
本発明は、発光ダイオードを光源とする照明具に関し、
自動車用の各種の照明具、たとえばストップランプ、ヘ
ッドランプ、テールランプ、ターンシグナルランプ、パ
ーキングランプ、就中ハイマウントストップランプとし
て好適な発光ダイオード照明具に関するものである。[Detailed description of the invention] The present invention relates to a lighting device using a light emitting diode as a light source.
The present invention relates to a light emitting diode lighting device suitable for various lighting devices for automobiles, such as stop lamps, headlamps, tail lamps, turn signal lamps, parking lamps, and especially high-mounted stop lamps.
鴛漣ヱυえ度
従来より、自動車の各種照明具の発光源としては、専ら
フィラメントランプが用いられてきているが、フィラメ
ントランプは消費電力が比較的多く、そのため発熱が著
しいので断線し易く、しかもランプ自体が大きくかつ重
い欠点がある。Traditionally, filament lamps have been used exclusively as the light source for various automobile lighting devices, but filament lamps consume a relatively large amount of power and therefore generate significant heat, making them easy to break. Moreover, the lamp itself has the disadvantage of being large and heavy.
フィラメントランプの有する上記の問題を解決するため
に、フィラメントランプに代わって多数個の゛発光ダイ
オードを用いる提案がある。発光ダイオードはフィラメ
ントランプよりも低電圧・低電流で発光するために消費
電力が非常に少なく、且つ断線するようなことはないの
で半永久的に使用することができ、しかもランプ自体が
軽くがっ小さくなるなど数々の長所がある。In order to solve the above-mentioned problems of filament lamps, there has been a proposal to use a large number of light emitting diodes instead of filament lamps. Light emitting diodes emit light at a lower voltage and current than filament lamps, so they consume very little power, and they do not break, so they can be used semi-permanently, and the lamp itself is light and small. It has many advantages such as:
゛を すべき５ ウ
しかし個々の発光ダイオードは、発光耀度が低く、しか
もその発光が散乱して前方に効率良く光を取り出すこと
ができないので前方への照明度が余り高くない。そのた
め室内の少照明に用いる場合には支障はないが、自動車
のストップランプ用などとしては不適当であると認識さ
れていた。その理由は、自動車用ストップランプは十分
な明るさの光を放出して他人に充分な注意力を喚起さし
得る必要がある。従来の発光ダイオード照明具は、個々
の発光ダイオードにつき反射鏡と集光レンズとを備えた
樹脂モールド加工を施し、かくして得た樹脂モールド発
光ダイオードの多数個を個々に電気絶縁板に取付けて結
線したものであるために生産能率が悪く、コスト高の問
題もあった。5) However, individual light-emitting diodes have low luminosity, and furthermore, the luminescence is scattered and cannot be efficiently extracted forward, so the illumination intensity toward the front is not very high. Therefore, although there is no problem when using it for indoor lighting with a small amount of light, it was recognized that it was unsuitable for use in automobile stop lamps, etc. The reason for this is that automobile stop lamps must be able to emit light of sufficient brightness to alert others. Conventional light-emitting diode lighting devices are made by molding each light-emitting diode with a reflecting mirror and a condensing lens, and then individually attaching a large number of the resin-molded light-emitting diodes to an electrically insulating board and wiring them together. Because it was a product, production efficiency was low and there were also problems with high costs.
＋１ 占を”するための
上記の事情に鑑みて、本発明は安価に生産可能であり、
しかも種々の用途に好適な発光ダイオード照明具を提供
しようとするものである。+1 In view of the above circumstances for fortune-telling, the present invention can be produced at low cost,
Furthermore, the present invention aims to provide a light emitting diode lighting device suitable for various uses.
すなわち本発明は、しぼり加工により設けた多数の窪み
を有する絶縁金属基板の各窪みの底部に発光ダイオード
が設置されており、該窪みの側壁面は反射面となってお
り、かつ隣接する発光ダイオード間を結ぶボンディング
・ワイヤが位置する絶縁金属基板の部分にもしぼり加工
により富みを設けてなることを特徴とする発光ダイオー
ド照明具である。That is, in the present invention, a light emitting diode is installed at the bottom of each recess of an insulated metal substrate having a large number of recesses formed by a drawing process, and the side wall surface of the recess is a reflective surface, and the adjacent light emitting diode This light-emitting diode lighting device is characterized in that the portion of the insulated metal substrate where the bonding wire connecting between the two is located is also provided with a richness by embossing.
又肌色立■
本発明の発光ダイオード照明具は、従来品のように個々
の発光ダイオードにつき反射鏡付きの樹脂モールド加工
を施し、ついで樹脂モールド発光ダイオードの多数個を
個々に電気絶縁板に取付けて結線するのではなく、前記
のしぼり加工により設けた発光ダイオード設置用窪みと
ボンディング・ワイヤ設置用窪みとを有し、しかも発光
ダイオード設置用窪みの側壁面は反射面となっている絶
縁金属基板を用いるものである。上記の絶縁金属基板は
、大量生産に適した構造を有し、したがって本発明の発
光ダイオード照明具は大量生産された咳板と樹脂モール
ド加工されていない発光ダイオードとを用いて流れ作業
にて安価に組み立て生産できる。しかも各発光ダイオー
ドからの放出光は、窪みの側壁面の反射面により反射さ
れて前方に効果的に放出される。In addition, the light-emitting diode lighting device of the present invention is made by molding each light-emitting diode with a reflective mirror like conventional products, and then individually attaching a large number of resin-molded light-emitting diodes to an electrically insulating board. Instead of connecting wires, an insulated metal substrate is used, which has a recess for installing a light emitting diode and a recess for installing a bonding wire, which are formed by the above-mentioned drawing process, and the side wall surface of the recess for installing a light emitting diode is a reflective surface. It is used. The above-mentioned insulated metal substrate has a structure suitable for mass production. Therefore, the light emitting diode lighting device of the present invention can be manufactured at low cost by assembly line work using mass produced cough plates and light emitting diodes that are not resin-molded. It can be assembled and produced. Moreover, the light emitted from each light emitting diode is reflected by the reflective surface of the side wall surface of the recess and is effectively emitted forward.
絶縁金属基板にボンディング・ワイヤ設置用窪みを設け
ない場合には、隣接する発光ダイオード間を結ぶボンデ
ィング・ワイヤは、少なくともその一部は必然的に絶縁
金属基板の表面より出っ張ることになる。このために発
光ダイオード照明具の組み立て作業中に上記出っ張り部
分が他所に引っ掛かって切断する問題が屡々あったが、
本発明においては、ボンディング・ワイヤ設置用窪みが
絶縁金属基板表面に設けされているので、ボンディング
・ワイヤを該富み内に配線することで上記した切断事故
が発生し難くなる。If the insulated metal substrate is not provided with a recess for installing the bonding wire, at least a portion of the bonding wire connecting adjacent light emitting diodes will inevitably protrude from the surface of the insulated metal substrate. For this reason, during the assembly work of light-emitting diode lighting equipment, there was often a problem that the above-mentioned protruding part got caught in other places and was cut off.
In the present invention, since the recess for installing the bonding wire is provided on the surface of the insulated metal substrate, the above-described cutting accident is less likely to occur by wiring the bonding wire within the recess.
実施■
以下、本発明の発光ダイオード照明具を図面に基づいて
説明する。Implementation (2) Hereinafter, the light emitting diode lighting device of the present invention will be explained based on the drawings.
第１図は本発明実施例の絶縁金属基板の上面図、第２図
は第１図の絶縁金属基板の一部断面図、第３図は比較例
の絶縁金属基板の一部断面図、第４図は第１図の実施例
の電気回路図例である。1 is a top view of an insulated metal substrate according to an example of the present invention, FIG. 2 is a partial sectional view of the insulated metal substrate of FIG. 1, and FIG. 3 is a partial sectional view of an insulated metal substrate of a comparative example. FIG. 4 is an example of an electrical circuit diagram of the embodiment shown in FIG.
第１図〜４図において、互いに対応する部分は同一の数
字で示す。In FIGS. 1 to 4, mutually corresponding parts are indicated by the same numerals.
第１図〜第４図において、１はしぼり加工により設けた
発光ダイオード設置用の窪み１１とボンディング・ワイ
ヤ設置用の窪み１２とを有する絶縁金属基板、２は各窪
み１１の底部に設置された発光ダイオード、３は抵抗で
ある。絶縁金属基板１はアルミニウム、銅、鉄、ステン
レス、ニッケルなどの金属からなる金属基板層１３、エ
ポキシ樹脂、ガラス繊維入りのエポキシ樹脂、ポリエチ
レン、架橋ポリエチレン、ポリイミド、などの絶縁性材
料からなる電気絶縁層１４、およびアルミニウム、銅、
金、ニッケルなどの導電性金属からなる電極パターン１
５とリードパターン１７とからなっており、かつしぼり
加工により設けた前記の多数の窪み１１および窪み１２
を有する。In FIGS. 1 to 4, 1 is an insulated metal substrate having a depression 11 for installing a light emitting diode and a depression 12 for installing a bonding wire, which are formed by drawing process, and 2 is installed at the bottom of each depression 11. A light emitting diode, 3 is a resistor. The insulating metal substrate 1 includes a metal substrate layer 13 made of metal such as aluminum, copper, iron, stainless steel, or nickel, and an electrically insulating layer 13 made of an insulating material such as epoxy resin, epoxy resin containing glass fiber, polyethylene, crosslinked polyethylene, or polyimide. layer 14, and aluminum, copper,
Electrode pattern 1 made of conductive metal such as gold or nickel
5 and a lead pattern 17, and the aforementioned large number of depressions 11 and depressions 12 provided by squeeze processing.
has.
電極パターン１５は、窪み１１の側壁面１６の一部並び
に底部とを覆い、第２図に示す実施例においては、その
先端部は隣接する発光ダイオードが設置されている窪み
１１に連なる窪み１２にまで延びている。隣接する発光
ダイオード２同士は電極パターン１５を介してボンディ
ングワイヤ５によって電気的に接続されている。第２図
および第３図のＸ−Ｘ線は、絶縁金属基板１の表面を示
すが、第３図においてはボンディングワイヤ５はその一
部が該表面より出っ張っているのに対して第２図におい
ては窪み１２の存在によってボンディングワイヤ５を絶
縁金属基板１の表面より下位に配線することができる。The electrode pattern 15 covers a part of the side wall surface 16 and the bottom of the recess 11, and in the embodiment shown in FIG. It extends to Adjacent light emitting diodes 2 are electrically connected to each other by bonding wires 5 via electrode patterns 15. The X-X line in FIGS. 2 and 3 shows the surface of the insulated metal substrate 1. In FIG. 3, a part of the bonding wire 5 protrudes from the surface, whereas in FIG. In this case, the presence of the recess 12 allows the bonding wire 5 to be wired below the surface of the insulated metal substrate 1.
なお発光ダイオード２として、たとえば表面積０．０４
〜０．１６ｍｍ”、高さ１０〜４００μｍ程度の寸法の
もの使用する場合、窪み１１および窪み１２の各深さは
、それぞれ上記Ｘ−Ｘ面から０．２〜０．５ｍｍ程度、
および０．０５〜Ｑ、 ２ｍｍ程度である。Note that the light emitting diode 2 has a surface area of 0.04, for example.
~0.16 mm'' and a height of approximately 10 to 400 μm, the depth of each of the recesses 11 and 12 is approximately 0.2 to 0.5 mm from the X-X plane, respectively.
and 0.05~Q, about 2mm.
絶縁金属基板１は、金属層、電気絶縁層、および導電性
金属層とからなる素板材を用い、たとえば導電性金属層
をパターンエツチング処理して電極バター４ン１５とリ
ードパターン１７を残して他部の除去し、ついでしぼり
加工して多数の窪み１１および１２を設けることにより
作製することができる。かくして得た絶縁金属基板１の
各窪み１１の底部に発光ダイオード２をその裏面電極が
窪み１１の底部の電極パターン１５と電気的に接触する
ようにたとえば導電性接着剤を用いて接続設置し、発光
ダイオード２の表面電極と隣接する電極パターン１５と
をボンディングワイヤ５によって接続し、ついで必要に
応じて絶縁金属基板１の全表面、または少なくとも窪み
１１および１２とボンディングワイヤ５とを光透過性の
有機高分子、たとえばポリカーボネートやエポキシ樹脂
にてマスクする。The insulated metal substrate 1 is made of a blank material consisting of a metal layer, an electrically insulating layer, and a conductive metal layer. For example, the conductive metal layer is pattern-etched, leaving only the electrode butter 4 15 and the lead pattern 17. It can be manufactured by removing a portion and then performing a squeezing process to provide a large number of depressions 11 and 12. A light emitting diode 2 is connected to the bottom of each depression 11 of the thus obtained insulated metal substrate 1 using, for example, a conductive adhesive so that its back electrode is in electrical contact with the electrode pattern 15 at the bottom of the depression 11. The surface electrode of the light emitting diode 2 and the adjacent electrode pattern 15 are connected by a bonding wire 5, and then, if necessary, the entire surface of the insulated metal substrate 1, or at least the recesses 11 and 12, and the bonding wire 5 are bonded with a light-transmitting material. Mask with an organic polymer such as polycarbonate or epoxy resin.
電気絶縁層１３を透明な絶縁性材料、たとえばエポキシ
樹脂、ポリカーボネート、ポリメチルメタクリレートな
どにて形成し、金属基板層１２の構成材料として表面が
清浄でしかも平滑であって良好な光反射作用をなす前記
金属の１種にて形成しておくと、窪み１１の側壁面１６
を構成する金Ｎ基板層１２の表面自体が反゛射面として
の作用をなす。あるいは必要に応じて窪み１１の側壁面
１６の表面に光反射性のフェス、ペイント、白色レジス
トなどの塗布したり、あるいは金属を草着するなどして
側壁面１６の光反射性を良好にすることができる。The electrical insulating layer 13 is formed of a transparent insulating material such as epoxy resin, polycarbonate, polymethyl methacrylate, etc., and as a constituent material of the metal substrate layer 12, the surface is clean and smooth and has a good light reflecting effect. If it is made of one of the metals mentioned above, the side wall surface 16 of the recess 11
The surface of the gold-N substrate layer 12 itself acts as a reflective surface. Alternatively, if necessary, coat the surface of the side wall surface 16 of the recess 11 with a light reflective surface, paint, white resist, etc., or apply metal to the surface to improve the light reflective property of the side wall surface 16. be able to.
発光ダイオード２から放出された光は、窪み１１の側壁
面１６で反射して絶縁金属基板１の前方方向に放射され
、必要に応じて絶縁金属基板１の前方に適当なレンズ板
を設置して平行光として前方に放出される。The light emitted from the light emitting diode 2 is reflected by the side wall surface 16 of the recess 11 and radiated in the forward direction of the insulated metal substrate 1. If necessary, an appropriate lens plate is installed in front of the insulated metal substrate 1. It is emitted forward as parallel light.
第４図において、多数の発光ダイオード２と１個の抵抗
３とが直列接続されたものの多数列が互いにリード部１
７を介して並列接続されている。In FIG. 4, a large number of light emitting diodes 2 and one resistor 3 are connected in series, and a large number of rows are connected to each other at a lead portion 1.
They are connected in parallel via 7.
発光ダイオード２としては、市販品を用いてよく、その
発光色にも別に特定はなく、たとえば自動車のストップ
ランプに使用する場合は赤色、ターンシグナルランプの
場合は黄色、緑色の信号燈では緑色など、用途に応じて
所望の発光色のものを選択すればよい。日本工業規格及
びアメリカ自動車技術協会の光度規準を満たすと言う観
点からは、できるだけ発光輝度の高いものを使用するこ
とが好ましい。特に本発明の発光ダイオード照明具を自
動車のストップランプ、特にハイマウントストップラン
プとして使用する場合には、発光ダイオード２としてた
とえば特願昭６１−９２８９５号明細書に記載されてい
るもの、すなわち活性層のキャリア濃度が１０ＩＳ〜１
０２０原子数／ｃｄ、特に１０”〜１０″原子数／ ｃ
ｔでダブルへテロ構造を有するものを使用することが好
ましい。前記明細書に記載の発光ダイオードは通常の発
光ダイオードよりも低電圧で高い発光輝度が得られ、低
電圧で稼働することにより熱の発生量が少なくなると共
にチップにおける発光輝度の不良が少なく量産が可能と
なりコストを低くすることができ、本発明の発光ダイオ
ード照明具に最適である。As the light-emitting diode 2, a commercially available product may be used, and the color of the light emitted by it is not particularly specified.For example, it may be red when used in a stop lamp of a car, yellow when used as a turn signal lamp, green when used as a green signal light, etc. , the desired luminescent color may be selected depending on the application. From the viewpoint of satisfying the luminous intensity standards of the Japanese Industrial Standards and the American Society of Automotive Engineers, it is preferable to use a material with as high luminance as possible. In particular, when the light-emitting diode lighting device of the present invention is used as a stop lamp for an automobile, especially a high-mounted stop lamp, the light-emitting diode 2 may be one described in Japanese Patent Application No. 61-92895, that is, an active layer. The carrier concentration is 10IS~1
020 atoms/cd, especially 10"~10" atoms/c
It is preferable to use one having a double heterostructure in t. The light-emitting diode described in the above specification can obtain higher luminance at a lower voltage than a normal light-emitting diode, and by operating at a lower voltage, it generates less heat and has fewer defects in luminance in the chip, making it easier to mass-produce. This makes it possible to reduce costs, making it ideal for the light emitting diode lighting device of the present invention.
光里傅処来
本発明の発光ダイオード照明具は、本発明の主要部部品
の生産、並びにそれら部品から本発明の組み立ての全て
につき連続化が可能であるので、低コストでの大量生産
が可能である。Since the light-emitting diode lighting device of the present invention has been produced since the present invention, the production of the main parts of the present invention and the assembly of the present invention from those parts can all be carried out continuously, so mass production at low cost is possible. be.
第１図は本発明実施例の絶縁金属基板の上面図、第２図
は第１図の絶縁金属基板の一部断面図、第３図は比較例
の絶縁金属基板の一部断面図、第４図は第１図の実施例
の電気回路図例である。
１：絶縁金属基板、１１：発光ダイオード設置用の窪み
、１２：ボンディング・ワイヤ設置用の窪み、１３：金
属基板層、１４１気絶縁層、１５：電極パターン、１６
：窪み１１の傾斜面、１７：リードパターン、２：各窪
み１１の底部に設置された発光ダイオード、３：抵抗、
５：ボンディングワイヤ。
特許出願人 三菱電線工業株式会社1 is a top view of an insulated metal substrate according to an example of the present invention, FIG. 2 is a partial sectional view of the insulated metal substrate of FIG. 1, and FIG. 3 is a partial sectional view of an insulated metal substrate of a comparative example. FIG. 4 is an example of an electrical circuit diagram of the embodiment shown in FIG. 1: Insulated metal substrate, 11: Recess for installing light emitting diode, 12: Recess for installing bonding wire, 13: Metal substrate layer, 141 Insulating layer, 15: Electrode pattern, 16
: sloped surface of the depression 11, 17: lead pattern, 2: light emitting diode installed at the bottom of each depression 11, 3: resistor,
5: Bonding wire. Patent applicant Mitsubishi Cable Industries, Ltd.
Claims (1)
属基板の各窪みの底部に発光ダイオードが設置されてお
り、該窪みの側壁面は反射面となっており、かつ隣接す
る発光ダイオード間を結ぶボンディング・ワイヤが位置
する絶縁金属基板の部分にもしぼり加工により窪みを設
けてなることを特徴とする発光ダイオード照明具。1. A light emitting diode is installed at the bottom of each indentation of an insulated metal substrate that has a large number of indentations formed by squeezing processing, and the side wall surface of the indentation is a reflective surface and connects adjacent light emitting diodes. A light emitting diode lighting device characterized in that a recess is also provided in the portion of the insulated metal substrate where the bonding wire is located by drawing processing.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13899588A JP2547072B2 (en) | 1988-06-06 | 1988-06-06 | Light emitting diode lighting |
| US07/267,851 US4935665A (en) | 1987-12-24 | 1988-11-07 | Light emitting diode lamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13899588A JP2547072B2 (en) | 1988-06-06 | 1988-06-06 | Light emitting diode lighting |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01309201A true JPH01309201A (en) | 1989-12-13 |
| JP2547072B2 JP2547072B2 (en) | 1996-10-23 |
Family
ID=15235023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13899588A Expired - Fee Related JP2547072B2 (en) | 1987-12-24 | 1988-06-06 | Light emitting diode lighting |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2547072B2 (en) |
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|---|---|---|---|---|
| JPH11163412A (en) * | 1997-11-25 | 1999-06-18 | Matsushita Electric Works Ltd | Led illuminator |
| WO2004001862A1 (en) * | 2002-06-19 | 2003-12-31 | Sanken Electric Co., Ltd. | Semiconductor light emitting device, method for producing the same and reflector for semiconductor light emitting device |
| WO2005029600A1 (en) * | 2003-09-24 | 2005-03-31 | Rohm Co., Ltd. | Chip type led |
| EP1385217A3 (en) * | 2002-07-25 | 2005-04-20 | Matsushita Electric Works, Ltd. | Photoelectric device-part |
| JP2005303211A (en) * | 2004-04-15 | 2005-10-27 | Stanley Electric Co Ltd | Flat surface irradiation-type light emitting diode (led) |
| JP2006303190A (en) * | 2005-04-20 | 2006-11-02 | Matsushita Electric Works Ltd | Light emitting device |
| JP2007067449A (en) * | 2002-06-19 | 2007-03-15 | Sanken Electric Co Ltd | Semiconductor light-emitting device |
| JP2007081430A (en) * | 2002-06-19 | 2007-03-29 | Sanken Electric Co Ltd | Semiconductor light emitting device, method for producing it and reflector for semiconductor light emitting device |
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| WO2020100416A1 (en) * | 2018-11-15 | 2020-05-22 | 株式会社ジャパンディスプレイ | Illumination device and display device |
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-
1988
- 1988-06-06 JP JP13899588A patent/JP2547072B2/en not_active Expired - Fee Related
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|---|---|---|---|---|
| JPH11163412A (en) * | 1997-11-25 | 1999-06-18 | Matsushita Electric Works Ltd | Led illuminator |
| JP4572892B2 (en) * | 2002-06-19 | 2010-11-04 | サンケン電気株式会社 | Semiconductor light emitting device, method of manufacturing the same, and reflector for semiconductor light emitting device |
| WO2004001862A1 (en) * | 2002-06-19 | 2003-12-31 | Sanken Electric Co., Ltd. | Semiconductor light emitting device, method for producing the same and reflector for semiconductor light emitting device |
| JP4572891B2 (en) * | 2002-06-19 | 2010-11-04 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP2007067449A (en) * | 2002-06-19 | 2007-03-15 | Sanken Electric Co Ltd | Semiconductor light-emitting device |
| JP2007081430A (en) * | 2002-06-19 | 2007-03-29 | Sanken Electric Co Ltd | Semiconductor light emitting device, method for producing it and reflector for semiconductor light emitting device |
| CN100338786C (en) * | 2002-06-19 | 2007-09-19 | 三垦电气株式会社 | Semiconductor light emitting device, method for producing the same and reflector for semiconductor light emitting device |
| US7429757B2 (en) | 2002-06-19 | 2008-09-30 | Sanken Electric Co., Ltd. | Semiconductor light emitting device capable of increasing its brightness |
| EP1385217A3 (en) * | 2002-07-25 | 2005-04-20 | Matsushita Electric Works, Ltd. | Photoelectric device-part |
| WO2005029600A1 (en) * | 2003-09-24 | 2005-03-31 | Rohm Co., Ltd. | Chip type led |
| US7323704B2 (en) | 2003-09-24 | 2008-01-29 | Rohm Co., Ltd. | Chip type led |
| CN100391015C (en) * | 2003-09-24 | 2008-05-28 | 罗姆股份有限公司 | Chip type LED |
| JP4665209B2 (en) * | 2004-04-15 | 2011-04-06 | スタンレー電気株式会社 | Flat illumination LED |
| JP2005303211A (en) * | 2004-04-15 | 2005-10-27 | Stanley Electric Co Ltd | Flat surface irradiation-type light emitting diode (led) |
| CN100435336C (en) * | 2004-10-18 | 2008-11-19 | 夏普株式会社 | Semiconductor light emitting device, backlight device for liquid crystal display |
| JP2006303190A (en) * | 2005-04-20 | 2006-11-02 | Matsushita Electric Works Ltd | Light emitting device |
| WO2020100416A1 (en) * | 2018-11-15 | 2020-05-22 | 株式会社ジャパンディスプレイ | Illumination device and display device |
| JP2020085938A (en) * | 2018-11-15 | 2020-06-04 | 株式会社ジャパンディスプレイ | Luminaire and display device |
| CN114334930A (en) * | 2021-12-30 | 2022-04-12 | 惠州市艾斯谱光电有限公司 | Lighting lamp and lamp panel thereof |
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| Publication number | Publication date |
|---|---|
| JP2547072B2 (en) | 1996-10-23 |
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