JPH01304692A - Film el element - Google Patents
Film el elementInfo
- Publication number
- JPH01304692A JPH01304692A JP63131699A JP13169988A JPH01304692A JP H01304692 A JPH01304692 A JP H01304692A JP 63131699 A JP63131699 A JP 63131699A JP 13169988 A JP13169988 A JP 13169988A JP H01304692 A JPH01304692 A JP H01304692A
- Authority
- JP
- Japan
- Prior art keywords
- delta
- luminous layer
- film
- light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、薄膜ＥＬ（エレクトロ・ルミネッセンス）素
子で、特に高効率、高輝度で発光させることができる薄
膜ＥＬ素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film EL (electroluminescence) device, and particularly to a thin film EL device that can emit light with high efficiency and high brightness.
薄膜ＥＬ素子の一般的な構成は第２図に示すようになっ
ていて、透明基板１上に透明導電膜２、第１の絶縁膜３
、発光層４、第２の絶縁膜５が順次積層され、さらに透
明導電膜２と第２の絶縁膜５にそれぞれ固着した電極６
ａ、６ｂとからなっており、画電極６ａ、６ｂに強電界
を印加することにより発光層４が発光し、その光を透明
基板１側より取り出すようになっている。The general structure of a thin film EL element is as shown in FIG.
, a light-emitting layer 4, and a second insulating film 5 are sequentially laminated, and furthermore, an electrode 6 is fixed to the transparent conductive film 2 and the second insulating film 5, respectively.
The light emitting layer 4 emits light by applying a strong electric field to the picture electrodes 6a and 6b, and the light is extracted from the transparent substrate 1 side.
この種の薄膜ＥＬ素子において発光輝度を高めるには発
光層４内の移動電荷を多くする必要があり、このための
手段として、従来は、発光層４に、高誘電率の絶縁膜を
隣接させていた。In order to increase the luminance of this type of thin film EL element, it is necessary to increase the amount of mobile charge within the light emitting layer 4. Conventionally, as a means for this purpose, an insulating film with a high dielectric constant is placed adjacent to the light emitting layer 4. was.
一般に誘電率が高い絶縁膜は抵抗率が低いため、絶縁膜
よりリーク電流が生じやすく、発光効率が減少してしま
うという問題があった。Generally, an insulating film with a high dielectric constant has a low resistivity, so leakage current is more likely to occur than an insulating film, resulting in a reduction in luminous efficiency.
本発明は上記のことにかんがみなされたもので、高効率
、高輝度で発光させることができる薄膜ＥＬ素子を提供
することを目的とするものである。The present invention was conceived in view of the above, and an object of the present invention is to provide a thin film EL element that can emit light with high efficiency and high brightness.
上記目的を達成するために、本発明に係る薄膜ＥＬ素子
は、発光層の両側に絶縁層を積層し、この両絶縁膜の外
側に電極を取付けてなる薄膜ＥＬ素子において、発光層
の少なくとも片側の絶縁膜との間にＺｎＳ、−δ（０＜
δ＜１）層を積層した構成となっている。In order to achieve the above object, a thin film EL device according to the present invention is a thin film EL device in which insulating layers are laminated on both sides of a light emitting layer, and electrodes are attached to the outside of both of the insulating films, at least one side of the light emitting layer. ZnS, -δ(0<
It has a structure in which δ<1) layers are laminated.
両電極に強電界を印加すると発光層が発光するが、この
ときのリーク電流は抑制され、また発光層における移動
電荷の発生は効率がよく得られる。When a strong electric field is applied to both electrodes, the light-emitting layer emits light, but the leakage current at this time is suppressed, and the generation of mobile charges in the light-emitting layer can be achieved with high efficiency.
本発明の実施例を第１図に基づいて説明する。 An embodiment of the present invention will be described based on FIG.
なおこの実施例において、上記従来例と同一部材は同一
符号を付して説明を省略する。In this embodiment, the same members as those in the conventional example described above are designated by the same reference numerals, and the explanation thereof will be omitted.
発光層４は母材をＺ ｎ Ｓ ｓ発光中心不純物をＭｎ
とした結晶薄膜、すなわちＺｎＳ：Ｍｎ薄膜にて構成し
てあり、またこの発光層４の両側に積層される第１．第
２の絶縁膜３，５はＳｉ３Ｎ４にて構成する。そしてこ
の両絶縁膜３゜５と発光層４の間にＺｎＳ、−δ（ただ
し０゛＜δ＜１）７．８を積層する。In the light emitting layer 4, the base material is ZnSs and the luminescent center impurity is Mn.
It is composed of a crystalline thin film, that is, a ZnS:Mn thin film, and the first . The second insulating films 3 and 5 are made of Si3N4. Then, ZnS, -δ (where 0<δ<1) 7.8 is laminated between both of the insulating films 3.5 and the light emitting layer 4.
上記構成において、両電極６ａ、６ｂに強電界を印加す
ることにより発光層４が発光し、その光は透明基板１よ
り取り出される。In the above configuration, the light emitting layer 4 emits light by applying a strong electric field to both electrodes 6a and 6b, and the light is extracted from the transparent substrate 1.
このとき、発光層４の両側に位置する第１゜第２の絶縁
膜３，５はＳｉ３Ｎ４にて構成され、これは高抵抗、低
誘電率であることにより、この絶縁膜３，５からのリー
ク電流は抑制される。At this time, the first and second insulating films 3 and 5 located on both sides of the light emitting layer 4 are made of Si3N4, which has a high resistance and a low dielectric constant, so that the insulating films 3 and 5 are Leakage current is suppressed.
また発光層４の母材となるＺｎＳの一部がＺｎＳ、−δ
となることにより、発光層４における移動電荷の発生は
効率よく得られる。In addition, part of the ZnS that is the base material of the light emitting layer 4 is ZnS, -δ
By doing so, the generation of mobile charges in the light emitting layer 4 can be efficiently obtained.
上記のことから、上記構成の薄膜ＥＬ素子は高効率、高
輝度で発光される。From the above, the thin film EL element having the above structure emits light with high efficiency and high brightness.
本発明の上記実施例における薄膜ＥＬ素子と従来の構成
のそれと、電圧に対する発生電荷の大きさと、電圧に対
する輝度を比較すると第３図、第４図に示すようになる
。Comparisons between the thin film EL device according to the above embodiment of the present invention and that of the conventional structure are shown in FIGS. 3 and 4 in terms of the magnitude of the generated charge with respect to voltage and the luminance with respect to voltage.
その結果、本発明の実施例による薄膜ＥＬ素子は、従来
のものに対して同一電圧で発生電荷が高くなり、また輝
度も高くなった。As a result, the thin film EL device according to the embodiment of the present invention generated a higher charge at the same voltage and also had higher brightness than the conventional device.
なお上記実施例ではＺｎＳ１−δ層を発光層４の両側に
積層した例を示したが、これは発光層４のどちらか一方
側に積層するようにしてもよい。この場合も両側に積層
する場合と略同様の作用効果を得ることができる。In the above embodiment, an example was shown in which the ZnS1-δ layer was laminated on both sides of the light emitting layer 4, but it may be laminated on either side of the light emitting layer 4. In this case as well, substantially the same effects as in the case of laminating on both sides can be obtained.
本発明によれば、絶縁層３．５からのリーク電流が抑制
されると共に、発光層４における移動電荷の発生が効率
よく得られることにより、高効率、高輝度で発光させる
ことができる。According to the present invention, leakage current from the insulating layer 3.5 is suppressed and mobile charges are efficiently generated in the light emitting layer 4, so that light can be emitted with high efficiency and high brightness.
第１図は本発明の実施例を示す断面図、第２図は従来例
を示す断面図、第３図は電圧に対する発生電荷を示す線
図、第４図は電圧に対する輝度を示す線図である。
３．５は絶縁層、４は発光層、６ａ、６ｂは電極、７，
８はＺｎ５ｓ−δ（０＜δ＜１）層。
出願人 株式会社 小 松 製 作 所代理人 弁
理士 米 原 正 章Fig. 1 is a sectional view showing an embodiment of the present invention, Fig. 2 is a sectional view showing a conventional example, Fig. 3 is a diagram showing generated charge versus voltage, and Fig. 4 is a diagram showing luminance versus voltage. be. 3.5 is an insulating layer, 4 is a light emitting layer, 6a, 6b are electrodes, 7,
8 is a Zn5s-δ (0<δ<1) layer. Applicant Komatsu Manufacturing Co., Ltd. Representative Patent Attorney Masaaki Yonehara
Claims (1)
層３、５の外側に電極６ａ、６ｂを取付けてなる薄膜Ｅ
Ｌ素子において、発光層４の少なくとも片側の絶縁層と
の間にＺｎＳ＿１＿−δ（０＜δ＜１）層７、８を積層
したことを特徴とする薄膜ＥＬ素子。A thin film E in which insulating layers 3 and 5 are laminated on both sides of a light emitting layer 4, and electrodes 6a and 6b are attached to the outside of both insulating layers 3 and 5.
A thin film EL element characterized in that ZnS_1_-δ (0<δ<1) layers 7 and 8 are laminated between the light emitting layer 4 and an insulating layer on at least one side of the L element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63131699A JPH01304692A (en) | 1988-05-31 | 1988-05-31 | Film el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63131699A JPH01304692A (en) | 1988-05-31 | 1988-05-31 | Film el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01304692A true JPH01304692A (en) | 1989-12-08 |
Family
ID=15064134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63131699A Pending JPH01304692A (en) | 1988-05-31 | 1988-05-31 | Film el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01304692A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0414398U (en) * | 1990-05-28 | 1992-02-05 | ||
| JPH0414397U (en) * | 1990-05-28 | 1992-02-05 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61284092A (en) * | 1985-06-07 | 1986-12-15 | アルプス電気株式会社 | Thin film el display element |
-
1988
- 1988-05-31 JP JP63131699A patent/JPH01304692A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61284092A (en) * | 1985-06-07 | 1986-12-15 | アルプス電気株式会社 | Thin film el display element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0414398U (en) * | 1990-05-28 | 1992-02-05 | ||
| JPH0414397U (en) * | 1990-05-28 | 1992-02-05 |
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