JPH01298544A - Optical information recording medium - Google Patents
Optical information recording mediumInfo
- Publication number
- JPH01298544A JPH01298544A JP63126929A JP12692988A JPH01298544A JP H01298544 A JPH01298544 A JP H01298544A JP 63126929 A JP63126929 A JP 63126929A JP 12692988 A JP12692988 A JP 12692988A JP H01298544 A JPH01298544 A JP H01298544A
- Authority
- JP
- Japan
- Prior art keywords
- film
- aln
- protective
- optical information
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 15
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 abstract description 11
- 239000011347 resin Substances 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 239000004417 polycarbonate Substances 0.000 abstract description 3
- 229920000515 polycarbonate Polymers 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 238000003848 UV Light-Curing Methods 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MSWZFWKMSRAUBD-RSVSWTKNSA-N (3r,4s,5s,6r)-3-amino-6-(hydroxymethyl)oxane-2,4,5-triol Chemical compound N[C@H]1C(O)O[C@H](CO)[C@@H](O)[C@H]1O MSWZFWKMSRAUBD-RSVSWTKNSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PENWSUJUKOTMCU-UHFFFAOYSA-N [Sn].[Pb].[Ge] Chemical compound [Sn].[Pb].[Ge] PENWSUJUKOTMCU-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- SUBGURZSWAMWPI-UHFFFAOYSA-N germanium lead Chemical compound [Ge].[Pb] SUBGURZSWAMWPI-UHFFFAOYSA-N 0.000 description 1
- IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光ビームを用いて情報が記録再生される光情報
記録媒体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical information recording medium on which information is recorded and reproduced using a light beam.
基板上に記録膜を成膜した光情報記録媒体は、データの
長期保存の目的に使用される。Optical information recording media in which a recording film is formed on a substrate are used for the purpose of long-term data storage.
この様な記録膜として、Ｇ ｅ −Ｔ ｅ系材料を主成
分としたもの（全体の８０％以上）が考えられている。As such a recording film, a film whose main component (more than 80% of the total) is a G e -Te type material is considered.
ここでＧｅ Ｔｅ系材料としては、テルル化ゲルマニ
ウムの他、テルル化ゲルマニウムのゲルマニウムを錫あ
るいは鉛で置換した、テルル化ゲルマニウム錫、テルル
化ゲルマニウム鉛及びテルル化ゲルマニウム錫鉛があり
、さらにこれらのテルルをセレンで置換した化合物を主
成分としたものが検討されている。この様な記録膜は、
高温高湿の環境下に放置されても記録材料の変化がなく
、記録データを正確に読み書きできることが必要である
。In addition to germanium telluride, the Ge Te-based materials include germanium tin telluride, germanium lead telluride, and germanium tin lead telluride, in which germanium in germanium telluride is replaced with tin or lead. A compound whose main component is a compound in which selenium is substituted is being considered. This kind of recording film is
It is necessary that the recording material does not change even if left in a high temperature and high humidity environment, and that recorded data can be read and written accurately.
例えばＧｅ−Ｔｅ系材料では、かかる点についてみると
高温高湿の環境下において徐々にではあるが酸化腐食し
、反射率や透過率という光学的性質が変化する現象があ
る。For example, Ge--Te based materials undergo oxidative corrosion, albeit gradually, in a high-temperature, high-humidity environment, resulting in a change in optical properties such as reflectance and transmittance.
この為、従来Ｇｅ−Ｔｅ系記録薄膜の両側に保護膜とし
て、蒸着法及びスパッタリング法によりＳ ｉｏ、Ｓ
ｉｏｚ 、Ｓ ｉｉ Ｎａなどの無機薄膜を被着させる
ことにより、高温高湿環境下における上記Ｇｅ−Ｔｅ系
記録薄膜の劣化を防止していた。For this reason, conventionally, Sio, S
Deterioration of the Ge-Te based recording thin film in a high temperature and high humidity environment was prevented by depositing an inorganic thin film such as Ioz, Sii Na or the like.
しかしながら、上述の様にＳｉＯ，ＳｉＯ２゜Ｓｉ＊Ｎ
４等の酸化物、窒化物等の無機保護膜を両側から被着さ
せるディスク構造では、光ビームを照射して記録膜にビ
ットを形成する際、体積収縮により、記録膜と密着して
いる保護膜軽クランクが発生し、この部分より水分が浸
透して、記録膜が酸化され、ＣＮ比が低下し、ビット誤
り率が増加する。またＳｉｎ、Ｓｉｎｇ等の酸化物の保
護膜は膜自体が酸素を保有しているため、記録膜との界
面で酸素原子との接触が激しいと考えられ、より一層記
録膜の酸化を助長することも考えられる。However, as mentioned above, SiO, SiO2゜Si*N
In a disk structure in which inorganic protective films such as oxides and nitrides such as No. A film light crank occurs, and moisture permeates through this portion, oxidizing the recording film, lowering the CN ratio and increasing the bit error rate. In addition, since the protective film of oxides such as Sin and Sing itself contains oxygen, it is thought that there is intense contact with oxygen atoms at the interface with the recording film, further promoting oxidation of the recording film. can also be considered.
本発明はこの様な水分の浸透を防止し、長期間にわたり
安定して情報を記録再生できる光情報記録媒体を提供す
ることを目的としてなされたものである。The present invention has been made with the object of providing an optical information recording medium that can prevent such moisture penetration and can stably record and reproduce information over a long period of time.
本発明は上記問題点を解決するために、保護膜としてＡ
ｌＮ無機保護膜を使用し、Ｇｅ−Ｔｅ系記録薄膜の両側
に被着させた構造の光情報記録媒体を提供するものであ
る。In order to solve the above problems, the present invention uses A as a protective film.
The present invention provides an optical information recording medium having a structure in which an IN inorganic protective film is applied on both sides of a Ge-Te based recording thin film.
本発明は以上の様な構成を有するものであるがの密着性
がよく、光ビーム照射によるビット形成時の体積収縮が
吸収される。このことがら記録薄膜にはクランクが生じ
に＜＜、酸化による劣化が完全に阻止され、高温高湿の
環境下に長期置かれても記録材料としての性質に変化が
生じない。Although the present invention has the above-mentioned configuration, it has good adhesion and absorbs volume shrinkage during bit formation due to light beam irradiation. As a result, the recording thin film is completely inhibited from deterioration due to oxidation, and its properties as a recording material do not change even if it is left in a high temperature and high humidity environment for a long period of time.
第１図は本発明による光情報記録媒体の一実施例を示し
たものである。即ち、ｌはポリカーボネート基板であり
、その上に保護膜２１止してＡｌｌＮ１１ｌを有し、更
にＧｅ−Ｔｅ系記録膜３．ＡｌＮ保護膜２２．紫外線硬
化樹脂（ＵＶ樹脂）Ｎ４をこの順序で積層した。ここで
、基板１はポリカーボネートに限ることなく、従来公知
のＰＭＭＡ。FIG. 1 shows an embodiment of an optical information recording medium according to the present invention. That is, 1 is a polycarbonate substrate, on which a protective film 21 is disposed and an AllN 111 is disposed, and a Ge-Te recording film 3. AlN protective film 22. Ultraviolet curing resin (UV resin) N4 was laminated in this order. Here, the substrate 1 is not limited to polycarbonate, but may be made of conventionally known PMMA.
ポリオレフィン、エポキシ等のプラスチック材。Plastic materials such as polyolefin and epoxy.
ガラス板、ｊｌ等の金属板等を使用できる。Ｇｅ−Ｔｅ
系薄膜３及びＡ桶護膜２１．２２はスパッタリング法に
より作製すう。ＵＶ樹脂はスピンナによりスピンコード
する。A glass plate, a metal plate such as JL, etc. can be used. Ge-Te
The system thin film 3 and the A-barrier films 21 and 22 are manufactured by sputtering. The UV resin is spin-coded using a spinner.
まず、真空槽内に基板１を入れ、高真空（〈１０−’Ｐ
ａ）に排気後、同一真空槽内で基板１にスパッタリング
法によりＡｌＮ保護膜２１．０ｅ−Ｔｅ系薄膜３．ＡＩ
！Ｎ保護１ｆＷ２２を連続で作製し、ここで真空を破壊
し、ＵＶ樹脂をスピンコードする。このＡ’Ｎ保護膜作
製は、Ａｒ＋Ｎ、雰囲気中、ＡｌＮターゲットを使用し
た反応性スパッタリング法により作製する。その時のＮ
２分率はＡＴに対しＴｏ、１〜０．４の範囲内である。First, place the substrate 1 in a vacuum chamber and place it in a high vacuum (<10-'P
After evacuation in step a), an AlN protective film 21.0e-Te based thin film 3. is applied to the substrate 1 by sputtering in the same vacuum chamber. AI
! N-protected 1fW22 is made in succession, where the vacuum is broken and the UV resin is spin-coded. This A'N protective film is manufactured by a reactive sputtering method using an AlN target in an Ar+N atmosphere. N at that time
The bisection ratio is To within the range of 1 to 0.4 with respect to AT.
この様に高真空（＜ ｌ Ｏ−’Ｐａ）に排気後、Ａｒ
＋Ｎｔ雰囲気中ＡｌＮターゲットの反応性スパッタリン
グにより、ＡｌＮＩＩＷを作製しているため膜中に酸素
原子を含まない。従って、酸化による劣化もない。After evacuation to high vacuum (< l O-'Pa) in this way, Ar
Since AlNIIW is produced by reactive sputtering of an AlN target in a +Nt atmosphere, the film does not contain oxygen atoms. Therefore, there is no deterioration due to oxidation.
本実施例によるディスク状光情報記録媒体にレーザビー
ムを照射し、回転数１８０Ｏｒｐｍで周波数ＩＭＨｚの
信号を記録し、その後ＪＩＳＣ５０２４Ｍ−１の温湿度
サイクル試験を行ったときのＣＮ比の変化を第２図ａ、
ビット誤り率の変化を第３図ａに示す。ｂは従来例であ
る。なお、本試験での１サイクルは通常の環境下では１
年に相当する。The disc-shaped optical information recording medium according to this example was irradiated with a laser beam, a signal with a frequency of IMHz was recorded at a rotation speed of 180 Orpm, and then a temperature/humidity cycle test according to JISC5024M-1 was performed. Figure a,
Figure 3a shows the change in bit error rate. b is a conventional example. Note that one cycle in this test is one cycle under normal circumstances.
corresponds to a year.
第２図、第３図からも明白なように、本実施例の様に、
Ｇｅ−Ｔｅ系材料の薄膜３をＡｆｆｉＮ保護１９２１．
２２で挾み、ＵＶ樹脂膜４を積層した円盤型光情報記録
媒体は、従来の様に、Ｇｅ−Ｔｅ系材料をＳ ｉｏ、Ｓ
ｊｏｔ 、Ｓ ｉｓ Ｎ４などの保護膜で挟み、樹脂
層を設ける構造のものに比べて、温湿度サイクル試験後
もＣＮ比、ビット誤り率の変化が小さいことを示してい
る。ＣＮ比が初期値（試験前の値）の３ｄＢ低下になる
時点また、ピント誤り率が初期値の３倍になる時点を媒
体寿命とすると、従来例の媒体寿命が３年であるのに比
べて、本実施例による光情報媒体では、媒体寿命が１０
年以上という長寿命になっていることがわかる。As is clear from FIGS. 2 and 3, as in this example,
Thin film 3 of Ge-Te based material is AffiN protected 1921.
The disk-shaped optical information recording medium sandwiched by 22 and laminated with UV resin film 4 is made of Ge-Te based material S io, S
This shows that the changes in the CN ratio and the bit error rate are smaller even after the temperature/humidity cycle test compared to those with a structure in which the resin layer is sandwiched between protective films such as jot or S is N4. If the media life is defined as the point at which the CN ratio decreases by 3 dB from the initial value (value before the test) and the point at which the focus error rate becomes three times the initial value, then the media life of the conventional example is 3 years. Therefore, the optical information medium according to this embodiment has a medium life of 10
It can be seen that they have a long lifespan of more than a year.
この様に本発明による光情報記録媒体は、保護膜として
ＡｌＮ膜を使用しているため、記録膜のビット部の変形
は密着性の優れたＡｌＮ膜層で吸収されてクラックが生
じに（く、Ｇｅ−Ｔｅ系材料の酸化、腐食を防止する効
果が高い。したがって高温高湿下に放置されても記録材
料の変化がなく、長期間にわたって正確に、情報を記録
再生することができる。As described above, since the optical information recording medium according to the present invention uses an AlN film as a protective film, deformation of the bit portion of the recording film is absorbed by the AlN film layer with excellent adhesion, preventing cracks from occurring. , is highly effective in preventing oxidation and corrosion of Ge-Te based materials.Therefore, even if left under high temperature and high humidity, the recording material does not change, and information can be accurately recorded and reproduced over a long period of time.
第１図は本発明による光情報記録媒体の断面図、第２図
は本発明による光情報記録媒体のＣＮ比の変化を示す線
図、第３図は同じくビット誤り率の変化を示す線図であ
る。
ｌ・・・基板
２１．２２・・・保護膜
３・・・Ｇｅ−Ｔｅ系薄膜
特許出願人 日本コロムビア株式会社′＄１１FIG. 1 is a cross-sectional view of the optical information recording medium according to the invention, FIG. 2 is a diagram showing changes in the CN ratio of the optical information recording medium according to the invention, and FIG. 3 is a diagram showing changes in the bit error rate. It is. l...Substrate 21.22...Protective film 3...Ge-Te thin film patent applicant Nippon Columbia Co., Ltd.'$11
Claims (1)
し、情報を記録する光情報記録媒体におて、Ｇｅ−Ｔｅ
系記録薄膜を、ＡｌＮ保護膜ではさむ構造としたことを
特徴とする光情報記録媒体。Ge-Te
An optical information recording medium characterized by having a structure in which a recording thin film is sandwiched between AlN protective films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63126929A JPH01298544A (en) | 1988-05-26 | 1988-05-26 | Optical information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63126929A JPH01298544A (en) | 1988-05-26 | 1988-05-26 | Optical information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01298544A true JPH01298544A (en) | 1989-12-01 |
Family
ID=14947395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63126929A Pending JPH01298544A (en) | 1988-05-26 | 1988-05-26 | Optical information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01298544A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02134739A (en) * | 1988-11-15 | 1990-05-23 | Nippon Columbia Co Ltd | Optical information recording medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6080144A (en) * | 1983-10-07 | 1985-05-08 | Sharp Corp | Optical memory element |
| JPS6262446A (en) * | 1985-09-13 | 1987-03-19 | Matsushita Electric Ind Co Ltd | Optical recording carriage |
-
1988
- 1988-05-26 JP JP63126929A patent/JPH01298544A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6080144A (en) * | 1983-10-07 | 1985-05-08 | Sharp Corp | Optical memory element |
| JPS6262446A (en) * | 1985-09-13 | 1987-03-19 | Matsushita Electric Ind Co Ltd | Optical recording carriage |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02134739A (en) * | 1988-11-15 | 1990-05-23 | Nippon Columbia Co Ltd | Optical information recording medium |
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