JPH0129783Y2 - - Google Patents
Info
- Publication number
- JPH0129783Y2 JPH0129783Y2 JP18826082U JP18826082U JPH0129783Y2 JP H0129783 Y2 JPH0129783 Y2 JP H0129783Y2 JP 18826082 U JP18826082 U JP 18826082U JP 18826082 U JP18826082 U JP 18826082U JP H0129783 Y2 JPH0129783 Y2 JP H0129783Y2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- slider
- holding
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 52
- 239000002994 raw material Substances 0.000 claims description 17
- 239000007791 liquid phase Substances 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18826082U JPS5991729U (ja) | 1982-12-13 | 1982-12-13 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18826082U JPS5991729U (ja) | 1982-12-13 | 1982-12-13 | 液相エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5991729U JPS5991729U (ja) | 1984-06-21 |
| JPH0129783Y2 true JPH0129783Y2 (enExample) | 1989-09-11 |
Family
ID=30406177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18826082U Granted JPS5991729U (ja) | 1982-12-13 | 1982-12-13 | 液相エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5991729U (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117616A (ja) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 液相エピタキシヤル成長方法 |
-
1982
- 1982-12-13 JP JP18826082U patent/JPS5991729U/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5991729U (ja) | 1984-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Iga et al. | Process Technology for Semiconductor Lasers: Crystal Growth and Microprocesses | |
| US4523962A (en) | Method for fabricating monocrystalline semiconductor layer on insulating layer by laser crystallization using a grid of anti-reflection coating disposed on poly/amorphous semiconductor | |
| US4796274A (en) | Semiconductor device with distributed bragg reflector | |
| GB2144337A (en) | Process for epitaxial growth | |
| US4764246A (en) | Buried undercut mesa-like waveguide and method of making same | |
| US6590920B1 (en) | Semiconductor lasers having single crystal mirror layers grown directly on facet | |
| JPH021387B2 (enExample) | ||
| JP3977920B2 (ja) | 半導体装置の製造方法 | |
| US4725112A (en) | Buried undercut mesa-like waveguide | |
| US4782035A (en) | Method of forming a waveguide for a DFB laser using photo-assisted epitaxy | |
| JPH04216693A (ja) | 自己安定化半導体回折格子の製作方法 | |
| US4716132A (en) | Method of manufacturing a distributed feedback type semiconductor device | |
| JPH0129783Y2 (enExample) | ||
| US4073676A (en) | GaAs-GaAlAs semiconductor having a periodic corrugation at an interface | |
| JPS6348438B2 (enExample) | ||
| US4859628A (en) | Interrupted liquid phase epitaxy process | |
| JPH021386B2 (enExample) | ||
| JPH0763053B2 (ja) | ＩｎＰ上へＩｎＧａＡｓＰを結晶成長する方法 | |
| JPS6154280B2 (enExample) | ||
| KR100319759B1 (ko) | 선택적 결정 성장법을 이용한 굴절률보상형 분산궤환형레이저다이오드의 제조 방법 | |
| GB2025123A (en) | Semiconductor laser device and method of manufacturing thesame | |
| JPH11204878A (ja) | 半導体レーザ及びその製造方法 | |
| JPS6065588A (ja) | 半導体レ−ザの製造方法 | |
| JPS61111522A (ja) | 液相エピタキシヤル成長装置 | |
| CA1293179C (en) | Interrupted liquid phase epitaxy process |