JPH01296628A - Equipment and method for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE:To enable the long time high temperature heat treatment as well as the short time rapid heating and quenching processing to be performed by a method wherein the title manufacturing equipment is provided with a furnace in large heating capacity for the long time high temperature processing as well as another furnace in small heating capacity for the short time rapid heating and quenching processing. CONSTITUTION:The title manufacturing equipment is provided with the first furnace 11 in large heating capacity for long time high temperature processing as well as the second furnace 12 in small heating capacity for short time rapid heating and quenching processing. Thus, a material 13 to be heat-treated can be cooling down- processed in descending temperature by shifting said material 13 to the second furnace 12 kept at the same temperature as that in the first furnace 11 through the intermediary of the first shifting means 14 to control the cooling temperature in the second furnace 12 after performing the stable high temperature heat treatment of said material 13 in the first furnace 11. Through these procedures, the long time stable heat treatment can be performed enabling the cooling speed of said material 13 to be controlled as well as the heat treatment in the descending temperature to be performed without depending upon the proper heating capacities of the heat treatment devices.

Description

[Detailed Description of the Invention] [Summary] The present invention relates to semiconductor manufacturing equipment, particularly a heat treatment equipment for heat treatment of semiconductor wafers, which can perform stable heat treatment for a long period of time and is not dependent on the heat capacity specific to the heat treatment equipment. , the purpose of which is to control the cooling rate of the object to be heat-treated and perform temperature-lowering heat treatment on the object, and a first furnace and a second furnace having different heat capacities are adjacent to each other, and the first furnace and the second furnace are adjacent to each other and have different heat capacities. The first furnace is equipped with a moving means for moving the object to be heat treated and an opening/closing means for blocking radiant heat between the furnace and the second furnace, and the first furnace is a furnace with a large heat capacity capable of performing high-temperature treatment for a long time; A first furnace is comprised of a furnace with a small heat capacity that performs rapid heating and cooling treatment for a short time, and is equipped with a furnace body, a resistance heating element, a heat treatment chamber, a shutter, and a moving stage; The second furnace is provided with an outer lamp heating body, a heat treatment chamber, a shutter, and a first moving means for taking the heat treatment object into and out of the first furnace, and is provided in the second furnace. the first via the second moving means;
The furnace includes separating and connecting the second furnace and the second furnace.

[Industrial application field]

The present invention relates to a semiconductor device manufacturing apparatus and a manufacturing method thereof, and more specifically, to a heat treatment apparatus and a temperature lowering treatment method for heat treatment of semiconductor wafers.

Recently, during heat treatment of semiconductor wafers 9, for example, during pulling growth of silicon ingots, the heat history may have different characteristics depending on the position above and below it depending on the amount of oxygen mixed in and its distribution. There is a need for a manufacturing apparatus that can perform heat treatment that involves high temperature treatment for a long time, and temperature-lowering treatment that can control the cooling rate of semiconductor wafers by controlling the amount of oxygen precipitated.

[Prior Art] FIG. 7 is an explanatory diagram of a conventional semiconductor manufacturing apparatus and a semiconductor device manufacturing method.

Figure (a) is a schematic diagram showing a heat treatment apparatus.

In the figure, ■ is a furnace body made of refractory material;
la is a heat treatment chamber, 2a and 2b are heating elements such as resistance heating elements,
3 is a shutter that blocks radiant heat.

Reference numeral 4 denotes an object to be heat-treated, such as a semiconductor wafer, and 5 is a moving stage that can move in the movement direction A while holding the object to be heat-treated.

In addition, since the heat capacity of the furnace body 1 is large, the object to be heat-treated can be stably heat-treated at high temperature for a long time.

FIG. 3(a) shows a thermal characteristic diagram of the heat treatment apparatus.

In the figure, the vertical axis is the furnace temperature θ [°C], the horizontal axis is the operating time T (hr), and tl is the furnace body 1 required to raise the heat treatment chamber 1a to a set temperature of 1000 ('[2]). It is the rise time that is proportional to the heat capacity.The characteristic curve shown by the solid line is the furnace temperature versus operating time (θ-T thermal characteristic) characteristic.

In addition, t3 is a steady heating time which varies depending on the heat treatment conditions of the object to be heat treated, and t is a standing time of the furnace when the heating elements 2a and 2b are turned off and the furnace is left to stand. Note that C indicated by diagonal lines is the cooling control range required for the object to be heat treated 4. For example, in order to erase the thermal history of a semiconductor wafer, it is necessary to control the cooling rate depending on the amount of oxygen precipitated on the wafer. This is the range of This can, for example, eliminate the thermal history phenomenon in which the characteristics of a semiconductor wafer change between the upper and lower parts of the ingot due to the mixing of oxygen into the ingot during the manufacturing process of the silicon ingot and the difference in the oxygen distribution. This is a range that requires temperature-lowering treatment to precipitate oxygen and control the gettering effect. Note that the cooling temperature θc −1000 ('[2] ~600
The amount of oxygen precipitated can be controlled by performing temperature-lowering treatment by varying the cooling time tc (hr) and the cooling time tc (hr).

[Problem to be solved by the invention]

By the way, according to the conventional heat treatment apparatus, heat treatment is performed for a predetermined period of time depending on the heat treatment conditions of the object to be heat treated 4, and then the heating elements 2a, 2b, etc. are left in the 0FFL furnace.

Therefore, stable heat treatment can be performed for a long time, but
There are the following problems.

■In order to increase the processing efficiency of heat treatment equipment,
If the semiconductor wafer is taken out of the heat treatment chamber 1a immediately after the steady-state heating time t2 shown in FIG. 7(b), plastic deformation of the semiconductor wafer may occur, for example.

This is because the semiconductor wafer is taken out from the furnace at room temperature, which causes a sharp temperature gradient in the temperature characteristics of the wafer, resulting in crystal dislocation defects called thermal slip phenomenon. It is.

■Also, if it is necessary to control the cooling rate of the object to be heat treated 4 in the cooling control range C in Figure (b) due to the large heat capacity of the heat treatment equipment, it is necessary to Although it is possible to deal with cases that match the dependent cooling characteristics, for example, cases where the cooling rate of the semiconductor wafer is varied within the cooling control range C that requires control of the amount of oxygen precipitated within the semiconductor wafer can be dealt with. The problem is that it cannot be done.

The present invention was created in view of the problems of the conventional examples, and is capable of performing stable heat treatment for a long period of time, and is capable of controlling the cooling rate of the object to be heat treated without depending on the heat capacity specific to the heat treatment apparatus. An object of the present invention is to provide a semiconductor device manufacturing apparatus and a manufacturing method thereof that enable controlled temperature-lowering heat treatment.

[Means to solve the problem]

As shown in FIG. 1.2 and one embodiment of the semiconductor device manufacturing apparatus and manufacturing method of the present invention in FIGS. 1
The furnace 11 and the second furnace 12 are adjacent to each other, and between the first furnace 11 and the second furnace 12, there is a moving means 14 for moving the object to be heat treated 13, and an opening/closing means for blocking radiant heat. means 15, wherein the first furnace 11 is a furnace with a large heat capacity that performs high-temperature treatment for a long time, and the second furnace 12 is a furnace with a small heat capacity that performs rapid heating and cooling treatment for a short time. The principle of the semiconductor device manufacturing method is as follows: a first furnace 11 with a large heat capacity performs the desired heat treatment on the object to be heat treated 13; The object to be heat treated 13 is moved to the second furnace 12, and the second furnace 1
2, the cooling rate of the object to be heat-treated 13 is controlled and the temperature lowering process is performed. 21
d, a furnace body 22a, an infrared lamp heating body 22b, a heat treatment chamber 22C, shutters 23b, 2
3c, and a second furnace 12 provided with a first moving means 14 for taking the object to be heat treated 13 in and out of the first furnace 11, and a second furnace 12 provided in the second furnace 12. The first furnace 11 and the second furnace 12 are separated and connected via the moving means 24, and the manufacturing method is performed by controlling the output of the heating body 21b of the first furnace 11. The furnace 11 of No. 1 is maintained at a temperature at which the object to be heat treated 13 can enter and exit, and at an arbitrary time T1, the shutter 23a is opened and closed,
The object to be heat treated 13 is introduced into the first furnace 11, the temperature of the first furnace 11 is raised to a desired treatment temperature, and the object to be heat treated 13 is heated for the desired treatment time and at the treatment temperature until the heat treatment end time T4. , several minutes before the heat treatment time T4, the second furnace 12
The output of the heating body 22b is controlled to raise the temperature of the second furnace 12 to be the same as the temperature of the first furnace 11, and at the heat treatment end time T4, the opening/closing device 23a,
23b and 23c are opened and closed, the object to be heat treated 13 is moved to the second furnace 12 via the first moving means 14, and the output of the heating body 22b of the second furnace 12 is controlled to control the cooling rate. The second manufacturing apparatus and the manufacturing method thereof are characterized in that the second manufacturing apparatus and the manufacturing method thereof are
is transferred from the first furnace 11 to the second furnace 12, the second furnace 12 is separated from the first furnace 11, the first furnace 11 is subjected to a rapid cooling treatment, and the first furnace 11 is The temperature is lowered to a temperature at which the next heat-treated material 13 can be introduced, and the temperature at which the next heat-treated material 13 can be introduced is maintained, thereby achieving the above object.

[Operation] According to the principle of the manufacturing apparatus and manufacturing method of the present invention, for a long time,
It is equipped with a first furnace with a large heat capacity that performs high-temperature treatment, and a second furnace with a small heat capacity that performs rapid heating and cooling treatment for a short time.

For this reason, after the object to be heat-treated is subjected to stable high-temperature heat treatment in the first furnace, the object to be heat-treated is transferred to the second furnace maintained at the same temperature as the first furnace via the first moving means. move,
By controlling the cooling temperature of the second furnace, the object to be heat treated can be cooled down.

As a result, the thermal characteristics of the heat-treated object are not subjected to thermal stress due to a sharp temperature gradient as in the conventional method, and the heat-treated object is able to eliminate the thermal history phenomenon and control the amount of oxygen precipitated. becomes possible.

Further, according to the manufacturing apparatus and manufacturing method of the present invention, a first furnace that performs high-temperature treatment for a long time using a resistance heating element as a heat source;
A second furnace that performs rapid heating and cooling treatment for a short time using an infrared lamp heating element as a heat source, and first and second moving means are provided in the second furnace.

For this reason, after the object to be heat-treated is subjected to high-temperature treatment for a long time using a resistance heating element in the first furnace, the object to be heat-treated is moved to the second furnace by operating the first moving means. The first furnace and the second furnace are separated by operating the moving means, and the temperature lowering process can be performed in the second furnace by controlling the output voltage of the infrared lamp heater.

As a result, the temperature in the heat treatment chamber of the first furnace can be rapidly lowered to prepare for the introduction of the next heat treatment object, etc.
It becomes possible to improve the processing efficiency of the first furnace.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

3 to 6 are diagrams for explaining a semiconductor device manufacturing apparatus and its manufacturing method according to an embodiment of the present invention, and FIG.
1 shows a structural diagram of a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

In the figure, 11 is a first furnace that performs high-temperature treatment for a long time, and includes a furnace body 21a with a large heat capacity made of a refractory material, a heat insulating material, etc., a resistance heating element 21b that performs high-temperature heating for a long time, and a and a heat treatment chamber 21c for heat-treating the semiconductor wafer 13.

A moving stage 21 that holds and moves the semiconductor wafer 13
d, and a shutter 23a.

Note that the shutter 23a is connected to the heat treatment chamber 21 of the furnace body 21a.
It is installed at the entrance and exit of the room c and has the function of blocking radiant heat. Further, the heating body may be a direct heating method such as a resistance heating body 21b or a high frequency induction furnace.

An indirect heating method such as a gas burner combustion furnace may also be used.

Further, 12 is a second furnace that performs rapid heating and cooling treatment for a short time, and includes a furnace body 22a with a small heat capacity, an infrared lamp heating body 22b, a heat treatment chamber 22c, and shutters 23b, 23.
C, and the first moving means 14 for introducing the moving stage 21d into the second furnace 12.

The second moving means 24 moves the second furnace 12 itself.

The second moving means 24 operates the first moving means 14 to move the semiconductor wafer 13 to the second furnace 1 after subjecting the semiconductor wafer 13 to high temperature treatment for a long time in the first furnace 11.
2, the first furnace 11 and second furnace 12 are separated.

FIG. 4 is a top view of the semiconductor device manufacturing apparatus according to the embodiment of the present invention.

In the figure, the second furnace 12 is moved, for example, along a track 25 in the moving direction of the first furnace 11, so that the heat treatment chamber 21c of the first furnace 11 does not interfere with the taking in and out of other objects to be heat treated. This will allow the vehicle to be evacuated to a position where it will not be possible.

Note that after the second furnace 12 is evacuated, the first furnace 11 is rapidly cooled down to a temperature at which the semiconductor wafer 13 can be introduced, for example, and preparations are made for introducing the next object to be heat-treated.

This improves the processing efficiency of the first furnace 11.

Furthermore, if the second moving means 24 is not provided, the processing efficiency decreases, but the cost of the manufacturing apparatus itself can be reduced.

These constitute a semiconductor device manufacturing apparatus according to an embodiment of the present invention.

FIG. 5 is a flowchart illustrating a method for manufacturing a semiconductor device according to an embodiment of the present invention.

In the figure, the output voltage, etc. of the resistance heating element 21b of the first furnace 11 is controlled by Pl, and the heat treatment chamber 21c of the first furnace 11 is heated.
The temperature is maintained at a temperature at which the semiconductor wafer 13 can be taken in and taken out.

Next, at time T1 at P2, the shutter 23a is opened and closed, the semiconductor wafer 13 is set in the first furnace 11, and the temperature of the first furnace 11 is raised to a desired processing temperature, for example, 1000 ("C").

Further, at P, the semiconductor wafer 13 is heat-treated for a desired processing time, for example, 100 hours, while maintaining the processing conditions of a heating temperature of 1000C.

On the other hand, at P4, several minutes before the heat treatment end time T, for example, at time T, the output voltage of the infrared lamp heating element 22b of the second furnace 12 is controlled, and the heat treatment chamber 22c of the second furnace 12 is heated. The temperature of the heat treatment chamber of the first furnace 11 (1000('[2
] ) to maintain the same.

Next, at time T, the shutter 23 is heated at P.
a, 23b, and 23c are opened and closed, and the moving stage 21d holding the semiconductor wafer 13 is introduced into the heat treatment chamber 22c of the second furnace 12 by operating the first moving means 14.

Next, the output voltage of the infrared lamp heating element 22b of the second furnace 12 is lowered to control its output, and, for example, the cooling rate is controlled to 100 ('C/C/C/C), and the semiconductor wafer 1
3. Perform the temperature-lowering cooling process.

Since the cooling rate can be controlled by this, it is possible to control the amount of oxygen precipitated, which is necessary for, for example, erasing the thermal history phenomenon that occurred during the production of the silicon ingot of the semiconductor wafer 13 or controlling the gettering effect. Become.

Note that after the semiconductor wafer 13 is moved from the heat treatment chamber 21c of the first furnace 11 to the second furnace 12 at P, the resistance heating body 21b and the shutter 23a are controlled to move the semiconductor wafer 13 from the heat treatment chamber 21c of the first furnace 11 to the second furnace 12. The temperature of the semiconductor wafer 13 is lowered to a temperature at which the next semiconductor wafer 13 can be introduced. Thereafter, the process returns to Pl and repeats the same operation to perform high-temperature, long-time processing and short-time temperature cooling processing on the semiconductor wafer 13.

FIG. 6 is an explanatory diagram of a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 6(a) shows a thermal diagram of the first furnace.

In the figure, the vertical axis is the furnace temperature θ+('c), and the first
This is the temperature of the heat treatment chamber 21c of the furnace 11. Further, the horizontal axis is time T [minutes], which indicates the time related to heating and cooling processing. Note that L□ is the heating characteristic.

LCI is a cooling characteristic.

Further, T is an arbitrary time, for example, the semiconductor wafer 13
The temperature that can be introduced into the first furnace 1 has increased to 500 ('[2]
1 is the time to introduce the semiconductor wafer 13 into the heat treatment chamber 21C. T2 is the time when the semiconductor wafer 13 rises to a desired temperature, for example, 1000 (2), and T, -T
, is the start-up time, which is a time proportional to the heat capacity of the furnace body 21a.

Further, T4 is the end time of the heat treatment.

Note that the dashed line indicates natural heat dissipation characteristics, and
This characteristic depends on the heat capacity of 1a.

Note that Ts' is the time after natural heat dissipation, when the temperature inside the furnace drops and the next semiconductor wafer can be introduced. Again. C controls the shutter 23a and the resistance heating element 21b to open the first furnace 11.
It shows rapid cooling characteristics. Note that Ts indicates the introduction time when the temperature of the heat treatment chamber of the first furnace 11 becomes such that the semiconductor wafer 13 can be introduced.

Figure (b) shows the thermal characteristics of the second furnace.

In the figure, LH2 indicates heating characteristics and LC2 indicates cooling characteristics.

Further, L1 to L4 are temperature decreasing cooling characteristics, and the semiconductor wafer 1
3 represents the cooling rate control range C of No. 3. Furthermore, L s
i indicates the critical heat dissipation characteristic of the wafer, which is a critical characteristic that if the wafer is cooled with a temperature gradient below the critical heat dissipation characteristic L si of the wafer, a thermal slip phenomenon occurs and crystal dislocation defects are generated.

Here, T is a time several minutes before the heat treatment end time T4, and is the start time of the second furnace 12.

The same figure ([2] is a thermal characteristic diagram of a semiconductor wafer.

In the figure, the overall thermal characteristics of the semiconductor wafer are calculated from the normal temperature state of the semiconductor wafer 13 to the heating characteristic LNI of the first furnace 11.
The figure shows the relationship between the wafer temperature θ3 ('[2] and the opposing distance T [minutes]) which is further affected by the temperature decreasing cooling characteristic L0 of the second furnace 12 and reaches the room temperature state.

In this way, a furnace 1 with a large heat capacity that performs high-temperature treatment for a long time, for example, the furnace body 21a, the resistance heating element 21b, the heat treatment chamber 21c, and the moving stage 21d.

A first furnace 11 consisting of a shutter 23a, and a furnace 2 with a small heat capacity that performs rapid heating and cooling processes for a short time, such as a furnace body 22.
a, infrared lamp heating body 22b, heat treatment chamber 22c, 1st.
A second furnace 12 is provided with two moving means 14, 24.

For this reason, after the semiconductor wafer 13 is subjected to stable high-temperature heat treatment by the resistance heating body 21b for a desired heat treatment time in the first furnace 11, the heat treatment end time T, The temperature of the second furnace 12 is maintained at the same temperature as the first furnace 11, e.g.
By moving the semiconductor wafer 13 to and controlling the output voltage etc. of the infrared lamp heating body 22b of the second furnace 12,
For example, the cooling rate of the semiconductor wafer 13 is 200 ('C/C/
It becomes possible to perform cooling treatment at a temperature of about a minute.

As a result, in the overall thermal characteristics of the semiconductor wafer 13,
It becomes possible to control gettering effects by erasing the thermal history phenomenon experienced during ingot production of semiconductor wafers and controlling the amount of oxygen precipitated, without being subjected to thermal stress due to sudden temperature gradients as in the past. .

Further, according to the embodiment of the present invention, the second furnace 12 can be separated from the first furnace 11 by the second moving means 24, so that natural heat dissipation characteristics are improved. At the time T,' when the temperature inside the first furnace decreases and the next semiconductor wafer can be introduced, the semiconductor wafer 13 is moved to the second furnace 12, the first furnace 11 is rapidly cooled, and the next semiconductor wafer 13 is transferred to the second furnace 12. The operating time of the first furnace 11 can be omitted by the difference from -11T when the introduction temperature reaches, for example, 500 [° C.]. This makes it possible to improve the processing efficiency of the first furnace 11.

〔Effect of the invention〕

As explained above, according to the present invention, it is possible to perform stable high-temperature heat treatment for a long time and rapid cooling temperature reduction treatment for a short time, which is required for the object to be heat-treated.

Therefore, for example, by controlling the amount of oxygen precipitated depending on the cooling rate of the semiconductor wafer, it is possible to erase the thermal history and control the gettering effect.

This makes it possible to provide a semiconductor wafer free of slip lines, crystal defects, and warpage, thereby making it possible to improve the yield of semiconductor elements and manufacture highly reliable semiconductor devices.

[Brief explanation of the drawing]

Part 1 is a principle diagram related to the semiconductor device manufacturing apparatus of the present invention, Figure 2 is a principle diagram related to the semiconductor device manufacturing method of the present invention, and Figure 3 is a semiconductor device according to an embodiment of the present invention. FIG. 4 is a top view of the semiconductor device manufacturing apparatus according to the embodiment of the present invention; FIG. 5 is a flowchart illustrating the semiconductor device manufacturing method according to the embodiment of the present invention; 6(a), (b), ([2] is an explanatory diagram related to the method for manufacturing a semiconductor device according to an embodiment of the present invention, FIG. 7(a)
, (b) are explanatory diagrams related to a conventional semiconductor manufacturing apparatus and a semiconductor device manufacturing method. (Explanation of symbols) 11...First furnace, 12...Second furnace, 1.21a, 22a...Furnace body, la, 21c, 22c...Heat treatment chamber, 2a, 2b, 2
1b...-heating body (resistance heating body), 22b... infrared lamp heating body, 3, 15. 23 a to 23 c-・Shi + Tsuta- (opening/closing case M), 4.13... Semiconductor wafer (object to be heat treated), 5.21
d...Moving stage, 14...First moving means, 24...Second moving means, 25...Trajectory, A, B...Movement direction, C...Cooling rate control range , L, , L Pass 2...Heating characteristics, L c+~Lc! ...Cooling characteristics, L0-L4... Temperature drop cooling characteristics, L si... Wafer critical heat radiation characteristics, Loc... Rapid cooling characteristics, Lo... Natural heat radiation characteristics, T, T,, T, ・...Time or arbitrary time, T4...
Heat treatment end time, 'r,,'r,'... Time at which introduction is possible, θ1. θ2.
θ3. θ...Temperature, θ0...Cooling temperature range, Ll...Rise time, 1,...Steady heating time, t...Leave time, tc...Cooling time.

Claims (1)

[Claims] [1] A first furnace (11) and a second furnace (11) having different heat capacities.
2) are adjacent to each other, and a moving means (14) for moving the object to be heat treated (13) between the first furnace (11) and the second furnace (12), and a moving means (14) that blocks radiant heat. opening/closing means (15), the first furnace (11) is a furnace with a large heat capacity that performs high temperature treatment for a long time, and the second furnace (12) performs rapid heating and quenching treatment for a short time. 1. A semiconductor device manufacturing device characterized by a furnace having a small heat capacity. [2] A first furnace (11) with a large heat capacity performs the desired heat treatment on the object to be heat treated (13), and a second furnace (11) with a small heat capacity that is approximately equal to the temperature of the first furnace (11) is heated. 12) A semiconductor device characterized in that the object to be heat treated (13) is moved to the second furnace (12), the cooling rate of the object to be heat treated (13) is controlled by the second furnace (12), and the temperature of the object (13) is lowered. manufacturing method. [3] A first furnace (11) equipped with a furnace body (21a), a resistance heating element (21b), a heat treatment chamber (21c), a shutter (23a), and a moving stage (21d), a furnace body (22a), an infrared lamp heating element (22b), a heat treatment chamber (22c), shutters (23b, 23c), and a first moving means (14) for moving the object to be heat treated (13) into and out of the first furnace (11); A second furnace (12
), and a second moving means (2) provided in the second furnace (12).
4) A semiconductor device manufacturing apparatus characterized in that a first furnace (11) and a second furnace (12) are separated and connected via a. (4) Control the output of the heating element (21b) of the first furnace (11) to maintain the first furnace (11) at a temperature at which the material to be heat treated (13) can be introduced, and at any time ( At T_1), the shutter (23a)
The object to be heat treated (13) is transferred to the first furnace (11).
the first furnace (11) is heated to the desired treatment temperature, the object to be heat treated (13) is heated for the desired treatment time and treatment temperature until the heat treatment end time (T_4), and the heat treatment is completed at the heat treatment time. A few minutes before (T_4), the output of the heating element (22b) of the second furnace (12) is controlled to make the temperature of the second furnace (12) the same as the temperature of the first furnace (11). At the end time of the heat treatment (T_4), the switchgear (
23a, 23b, 23c) to open and close the object to be heat treated (13
) to the second furnace (12) via the first moving means (14)
A method for manufacturing a semiconductor device, characterized in that the output of the heating element (22b) of the second furnace (12) is controlled to adjust the cooling rate to perform temperature-lowering heat treatment on the object to be heat treated. [5] After the object to be heat treated (13) is moved from the first furnace (11) to the second furnace (12), the second furnace (12) is separated from the first furnace (11), The first furnace (11) is subjected to a rapid cooling treatment, and the temperature of the first furnace (11) is lowered to a temperature at which the next heat-treated material (13) can be introduced, and the temperature at which the next heat treatment material (13) can be introduced is maintained. Manufacturing equipment for semiconductor devices.