JPH01296167A - Probe card - Google Patents

Probe card

Info

Publication number
JPH01296167A
JPH01296167A JP12746988A JP12746988A JPH01296167A JP H01296167 A JPH01296167 A JP H01296167A JP 12746988 A JP12746988 A JP 12746988A JP 12746988 A JP12746988 A JP 12746988A JP H01296167 A JPH01296167 A JP H01296167A
Authority
JP
Japan
Prior art keywords
probe card
probe
hole
fixing member
wall surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12746988A
Other languages
Japanese (ja)
Other versions
JP2634191B2 (en
Inventor
Yasuharu Nakajima
康晴 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63127469A priority Critical patent/JP2634191B2/en
Publication of JPH01296167A publication Critical patent/JPH01296167A/en
Application granted granted Critical
Publication of JP2634191B2 publication Critical patent/JP2634191B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Measuring Leads Or Probes (AREA)
  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To make the measurement of electric characteristic of a semiconductor element highly accurate, by mixing-in an electric wave absorbing material at least in a portion adjacent to a probe needle of a fixing member for fixing said probe needle so as to absorb the high frequency components. CONSTITUTION:A circuit pattern 4 is formed on the surface of a substrate of a probe card 2. A probe needle 9 is fixed to a through hole 7 via a fixing member 8. Electric have absorbing material composed of magnetic substance such as ferrite powders or the like is mixed in epoxy resin of the fixing member 8. An end 9a of the probe needle 9 is brought into touch with each pad 13 formed on a semiconductor wafer 12 on a probing device 11. Accordingly, when the electric characteristic of the semiconductor is measured, an oscillating phenomenon brought about by way of the parasitic capacity present between the needles 9 is absorbed by the wave absorbing material. Therefore, the measurement of the electric characteristic can be positively performed with high accuracy.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、半導体ウェハに形成された半導体素子の電気
的特性の測定に用いられるプローブカードに関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a probe card used for measuring electrical characteristics of semiconductor elements formed on a semiconductor wafer.

(従来の技術) 第3図(a)は従来例のプローブカードの平面図であり
、第3図(b)は第3図(a)のA−A線に沿う断面図
である。これらの図に示されている従来例のプローブカ
ードlは、平面視形状がほぼ矩形をなすプローブカード
基板2を備えている。
(Prior Art) FIG. 3(a) is a plan view of a conventional probe card, and FIG. 3(b) is a sectional view taken along line A--A in FIG. 3(a). The conventional probe card 1 shown in these figures includes a probe card board 2 having a substantially rectangular shape in plan view.

このプローブカード基板2の表面3には、複数の配線パ
ターン4.・・・か形成されている。この配線パターン
4.・・・の一端はプローブカード基板2の端部5側の
コネクタ端子6のそれぞれに個別に接続されている。ま
た、配線パターン4.・・・の他端は、プローブカード
基板2のほぼ中央部の所定箇所に形成された平面円形の
貫通孔7の内周縁部にまで延びて形成されている。
The surface 3 of this probe card board 2 has a plurality of wiring patterns 4. ...is formed. This wiring pattern 4. ... are individually connected to each of the connector terminals 6 on the end 5 side of the probe card board 2. Also, wiring pattern 4. . . . The other end is formed to extend to the inner peripheral edge of a through hole 7 which is circular in plan and formed at a predetermined location approximately in the center of the probe card board 2.

8はプローブカード基板2の厚みよりも厚く、かつ、そ
の平面視形状が貫通孔7と対応した外形に形成された固
定部材であって、その外周壁面がプローブカード基板2
の貫通孔7の内周壁面に当接するようにして、その貫通
孔7内に配設されている。
Reference numeral 8 denotes a fixing member that is thicker than the probe card board 2 and whose planar shape corresponds to the through hole 7, and whose outer peripheral wall surface is thicker than the probe card board 2.
It is arranged in the through hole 7 so as to come into contact with the inner circumferential wall surface of the through hole 7 .

9、・・・は複数の、この例では6本の、プローブ針で
あって、各プローブ針9.・・・は、それらの各先端9
a、・・・がプローブカード基板2の裏面側から下方へ
突出するように、プローブカード基板2の貫通孔7の内
周壁面と、固定部材8の外周壁面との間に挟持固定され
ている。
9, . . . are a plurality of probe needles, six in this example, and each probe needle 9. ...is each tip 9 of them
a, . . . are sandwiched and fixed between the inner peripheral wall surface of the through hole 7 of the probe card board 2 and the outer peripheral wall surface of the fixing member 8 so as to protrude downward from the back side of the probe card board 2. .

上記構成の従来例のプローブカード1による半導体素子
の電気的特性の測定においては、まず、プローブ針9.
・・・それぞれの位置を、図示しない半導体ウェハ上に
形成された半導体素子のパッドと対応した位置に設定し
、そのプローブ針9.・・・の各先端9a、・・・をプ
ローブカード基板2の貫通孔7から突出させた状態でも
って、固定部材8を介してプローブカード基板2にその
プローブ針9゜・・・を固定する。次いで、このプロー
ブカードlと測定対象である半導体ウェハとを、互いに
対向配置した状態でウェハプロービング装置に装着し、
プローブ針9.・・・を通じて半導体素子と外部電源と
測定機器などとの間で測定用人出力信号の授受を行うこ
とにより、半導体素子の電気的特性を測定する。
In measuring the electrical characteristics of a semiconductor element using the conventional probe card 1 having the above configuration, first, the probe needle 9.
. . . Each position is set to correspond to a pad of a semiconductor element formed on a semiconductor wafer (not shown), and the probe needle 9. The probe needles 9°... are fixed to the probe card board 2 via the fixing member 8 with the tips 9a,... of the probes protruding from the through holes 7 of the probe card board 2. . Next, this probe card l and the semiconductor wafer to be measured are mounted on a wafer probing device in a state where they are placed facing each other,
Probe needle9. The electrical characteristics of the semiconductor element are measured by transmitting and receiving output signals for measurement between the semiconductor element, an external power source, and a measuring device through...

(発明が解決しようとする課題) 上記のプローブカードを用いての半導体素子の電気的測
定にあっては、半導体素子の入力側と出力側とのそれぞ
れに対応するプローブ針間に存在している寄生容量を介
してその入出力間に高周波成分が正帰還されることがあ
り、その正帰還により発振現象が発生して半導体素子の
電気的特性を高精度で測定することができなくなること
があるという問題があった。
(Problem to be Solved by the Invention) In electrical measurement of a semiconductor device using the above-mentioned probe card, there are High frequency components may be positively fed back between the input and output via parasitic capacitance, and this positive feedback may cause an oscillation phenomenon, making it impossible to measure the electrical characteristics of semiconductor devices with high precision. There was a problem.

本発明は、上記に鑑みてなされたものであって、半導体
素子の入出力側に対応するプローブ針相互間に存在する
寄生容量による高周波成分を吸収することで、上記発振
現象を抑制して、半導体素子の電気的特性を高精度で確
実に行うことができるようにすることを目的としている
The present invention has been made in view of the above, and suppresses the above oscillation phenomenon by absorbing high frequency components due to parasitic capacitance existing between probe needles corresponding to the input and output sides of a semiconductor element. The purpose is to ensure that the electrical characteristics of semiconductor devices can be determined with high precision.

(課題を解決するための手段) 前記目的を達成するために、本発明のプローブカードに
おいては、配線パターンを備え、かつ、当該表面から裏
面にかけて貫通した貫通孔を所定箇所に有するとともに
、前記配線パターンがその貫通孔の内周縁部にまで延び
て形成されたプローブカード基板と、前記プローブカー
ド基板におけるその貫通孔の内周壁面にその外周壁面が
入り込むことのできる外形を有し、かつ前記プローブカ
ード基板の前記内周壁面とその外周壁面とが当接するよ
うに当該貫通孔内部に配設された固定部材と、一端が前
記配線パターンに接続され、他端におけるその先端部が
前記プローブカード基板の裏面側から下方へ向けて突出
するように前記貫通孔の内周壁面と前記固定部材の外周
壁面とで挟持固定されたプローブ針とを具備したプロー
ブカードにおいて、前記固定部材には、少なくとも前記
プローブ針付近の部分に電波吸収材が混入されているこ
とを特徴としている。
(Means for Solving the Problems) In order to achieve the above object, the probe card of the present invention is provided with a wiring pattern and has a through hole penetrating from the front surface to the back surface at a predetermined location, and the A probe card board having a pattern extending to the inner peripheral edge of the through hole, and an outer shape that allows the outer peripheral wall surface to fit into the inner peripheral wall surface of the through hole in the probe card board, and the probe A fixing member is disposed inside the through hole so that the inner circumferential wall surface and the outer circumferential wall surface of the card board are in contact with each other, and one end thereof is connected to the wiring pattern, and the tip portion of the other end is connected to the probe card board. In the probe card, the probe needle is provided with a probe needle held and fixed between the inner peripheral wall surface of the through hole and the outer peripheral wall surface of the fixing member so as to protrude downward from the back side of the probe card. It is characterized by a radio wave absorbing material mixed into the area near the probe needle.

(作用) かかる構成によれば、固定部材に電波吸収材が混入され
ているので、半導体素子の入出力間に対応するプローブ
針相互間に存在する寄生容量に付随して発生した発振現
象に伴って生起する高周波成分は、その電波吸収材で吸
収されることから、その高周波成分か正帰還されなくな
り、その結果、その発振現象は効果的に抑制されること
になる。
(Function) According to this configuration, since the radio wave absorbing material is mixed into the fixing member, the oscillation phenomenon that occurs due to the parasitic capacitance that exists between the probe needles corresponding to the input and output of the semiconductor element. Since the high frequency component generated by the radio wave absorbing material is absorbed by the radio wave absorbing material, the high frequency component is no longer fed back positively, and as a result, the oscillation phenomenon is effectively suppressed.

(実施例) 以下、本発明の実施例を図面を参照して詳細に説明する
。第1図(a)は本発明の実施例に係るプローブカード
の平面図であり、第1図(b)は第1図(a)のB−B
線に沿う断面図であり、第2図は同実施例のプローブカ
ードを測定機器に組み込んだ場合の断面図である。これ
らの図に示された本実施例のプローブカードlOにおい
て、それが有する部分および部品と、従来例に係る第3
図(a)および第3図(b)のプローブカード1と対応
する部分および部品には同一の符号を付し、それらにつ
いては名称を列記するにとどめて、その詳細な説明は省
略する。
(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1(a) is a plan view of a probe card according to an embodiment of the present invention, and FIG.
FIG. 2 is a cross-sectional view taken along the line, and FIG. 2 is a cross-sectional view when the probe card of the same embodiment is incorporated into a measuring instrument. In the probe card 10 of this embodiment shown in these figures, the parts and parts it has, and the third part according to the conventional example.
Portions and components corresponding to those of the probe card 1 in FIGS. (a) and 3(b) are designated by the same reference numerals, and their detailed explanations will be omitted except for listing their names.

すなわち、2はプローブカード基板、3はプローブカー
ド基板2の表面、4はプローブカード基板2の表面3に
形成された配線パターン、6はプローブカード基板2の
端部5に取り付けられたコネクタ端子、7はプローブカ
ード基板2に形成された貫通孔、8はその貫通孔7に固
定された固定部材、9はプローブ針、9aはそのプロー
ブ針9の先端である。
That is, 2 is a probe card board, 3 is a surface of the probe card board 2, 4 is a wiring pattern formed on the surface 3 of the probe card board 2, 6 is a connector terminal attached to the end 5 of the probe card board 2, 7 is a through hole formed in the probe card board 2, 8 is a fixing member fixed to the through hole 7, 9 is a probe needle, and 9a is the tip of the probe needle 9.

固定部材8を除いては、従来例と同様の上記基本構成を
有する本実施例のプローブカードIOにあっては、固定
部材8がフェライト粉などの磁性材料からなる電波吸収
材がエポキシ系樹脂中に混入された構造になっているこ
とに特徴を有している。
In the probe card IO of this embodiment, which has the same basic configuration as the conventional example except for the fixing member 8, the fixing member 8 is made of a radio wave absorbing material made of a magnetic material such as ferrite powder, and is contained in an epoxy resin. It is characterized by a structure in which it is mixed with

この場合、この固定部材8中の電波吸収材は必ずしもそ
の固定部材8の全体に混入されている必要はなく、少な
くともプローブ針9付近のところに部分的に混入されて
いるだけであってもよい。
In this case, the radio wave absorbing material in the fixing member 8 does not necessarily need to be mixed into the entire fixing member 8, and may be mixed at least partially in the vicinity of the probe needle 9. .

そして、本実施例では、そのような構成の固定部材8が
、その外周壁面が貫通孔7の内周壁面に対応させられた
状態でその貫通孔7の内部に配置されている。
In this embodiment, the fixing member 8 having such a configuration is disposed inside the through hole 7 with its outer circumferential wall surface corresponding to the inner circumferential wall surface of the through hole 7.

上記構成を有する本実施例のプローブカード10による
半導体素子の電気的測定は、まず、第2図に示すように
、ブロービング装置のステージl夏の上に配置された半
導体ウェハI2の表面に形成されている半導体素子の各
パッド13.・・・に対向するように各プローブ針9.
・・を位置決めし、各プローブ針9.・・・それぞれの
先端9a、・・・をプローブカード基板2の貫通孔7か
ら下方に突出させ、電波吸収材が混入されている固定部
材8を介してプローブカード基板2を固定配置する。そ
の状態で、ブロービング装置のステージ11上に載置固
定されている半導体ウェハ12に対してプローブ針9.
・・それぞれの各先端9a、・・・を、半導体素子のパ
ッド13にそれぞれ接触させ、各プローブ針9、・・・
と、配線パターン4と、コネクタ端子6とを介して半導
体素子と外部電源や測定機器などとの間で測定用入出力
信号の授受を行わせて、この半導体素子の電気的特性の
測定を行う。
The electrical measurement of a semiconductor element using the probe card 10 of this embodiment having the above-mentioned configuration is carried out first as shown in FIG. 2. First, as shown in FIG. Each pad 13. Each probe needle 9.
..., position each probe needle 9. The tips 9a, . . . of each probe card board 2 are made to protrude downward from the through hole 7 of the probe card board 2, and the probe card board 2 is fixedly arranged via a fixing member 8 mixed with a radio wave absorbing material. In this state, the probe needle 9.
Each tip 9a,... is brought into contact with the pad 13 of the semiconductor element, and each probe needle 9,...
The electrical characteristics of the semiconductor element are measured by transmitting and receiving measurement input/output signals between the semiconductor element and an external power supply, measuring equipment, etc. via the wiring pattern 4 and the connector terminal 6. .

この測定において、半導体素子の入力側および出力側の
それぞれに対応しているプローブ針間に存在している上
記の寄生容信を介してその入出力間に高周波成分の正帰
還がかかって発振現象が生起することになるが、本実施
例においては固定部材の内部に混入されている電波吸収
材により、その高周波成分が吸収されることから、上記
発振現象が抑制されることとなる。
In this measurement, oscillation occurs due to positive feedback of high frequency components between the input and output via the above-mentioned parasitic contact between the probe needles corresponding to the input and output sides of the semiconductor element. However, in this embodiment, the radio wave absorbing material mixed inside the fixing member absorbs the high frequency component, so that the above oscillation phenomenon is suppressed.

この場合、1つの半導体素子の電気的測定が終了するご
とに、ブロービング装置のステージを所定距離ずつ移動
させることにより、半導体ウェハに形成された半導体素
子の電気的特性の測定を順次に行う。
In this case, each time the electrical measurement of one semiconductor element is completed, the stage of the blowing device is moved by a predetermined distance to sequentially measure the electrical characteristics of the semiconductor elements formed on the semiconductor wafer.

(発明の効果) 以上説明したことから明らかなように本発明によれば、
固定部材中に電波吸収材が混入されていることから、半
導体素子およびその電気的特性の測定系を介して発生ず
る発振現象による高周波成分については、これを、その
電波吸収材によって、効果的に吸収させることができる
。したがって、本発明では半導体素子の電気的特性の測
定を高精度で確実に行うことができる。
(Effects of the Invention) As is clear from the above explanation, according to the present invention,
Since a radio wave absorbing material is mixed into the fixing member, high frequency components due to oscillation phenomena that occur through the semiconductor device and its electrical characteristic measurement system can be effectively absorbed by the radio wave absorbing material. It can be absorbed. Therefore, according to the present invention, it is possible to reliably measure the electrical characteristics of a semiconductor element with high precision.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は本発明の一実施例に係る半導体素子のプ
ローブカードの平面図、第1図(b)は第1図(a)の
A−A線に沿う断面図、第2図は測定機器のステージと
、その上に配置された半導体ウェハと、その半導体ウェ
ハのパッド上にプローブ針が接触した状態にある第1図
(b)に対応するそのプローブカードの断面図である。 第3図(a)は従来例のプローブカードの平面図、第3
図(b)は第3図(a)のB−B線に沿う断面図である
。 2・・・プローブカード基板、3・・・プローブカード
基板の表面、4・・配線パターン、6・・コネクタ端子
、7・・・貫通孔、8・・・固定部材、9・・・プロー
ブ針、9a・・・プローブ針の先端、10・・・プロー
ブカード、II・・・ステージ、I2・・・半導体ウェ
ハ、13・・・半導体ウェハのパッド。 図中、同一符号は同一部分または相当部分を示している
FIG. 1(a) is a plan view of a probe card for a semiconductor device according to an embodiment of the present invention, FIG. 1(b) is a sectional view taken along line A-A in FIG. 1(a), and FIG. 1(b) is a sectional view of the stage of the measuring instrument, the semiconductor wafer placed thereon, and the probe card corresponding to FIG. 1(b) in which the probe needle is in contact with the pad of the semiconductor wafer. Figure 3(a) is a plan view of a conventional probe card;
FIG. 3(b) is a sectional view taken along line BB in FIG. 3(a). 2... Probe card board, 3... Surface of probe card board, 4... Wiring pattern, 6... Connector terminal, 7... Through hole, 8... Fixing member, 9... Probe needle , 9a... Tip of probe needle, 10... Probe card, II... Stage, I2... Semiconductor wafer, 13... Pad of semiconductor wafer. In the drawings, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims] (1)配線パターンを備え、かつ、当該表面から裏面に
かけて貫通した貫通孔を所定箇所に有するとともに、前
記配線パターンがその貫通孔の内周縁部にまで延びて形
成されたプローブカード基板と、前記プローブカード基
板におけるその貫通孔の内周壁面にその外周壁面が入り
込むことのできる外形を有し、かつ前記プローブカード
基板の前記内周壁面とその外周壁面とが当接するように
当該貫通孔内部に配設された固定部材と、一端が前記配
線パターンに接続され、他端におけるその先端部が前記
プローブカード基板の裏面側から下方へ向けて突出する
ように前記貫通孔の内周壁面と前記固定部材の外周壁面
とで挟持固定されたプローブ針とを具備したプローブカ
ードにおいて、前記固定部材には、少なくとも前記プロ
ーブ針付近の部分に電波吸収材が混入されていることを
特徴とするプローブカード。
(1) A probe card board having a wiring pattern and having a through hole penetrating from the front surface to the back surface at a predetermined location, and the wiring pattern extending to the inner peripheral edge of the through hole; The through hole has an outer shape that allows the outer peripheral wall surface to fit into the inner peripheral wall surface of the through hole in the probe card board, and the inside of the through hole is such that the inner peripheral wall surface of the probe card board and the outer peripheral wall surface are in contact with each other. The disposed fixing member is connected to the inner circumferential wall surface of the through hole such that one end is connected to the wiring pattern and the tip portion of the other end protrudes downward from the back side of the probe card board. A probe card comprising a probe needle clamped and fixed to an outer circumferential wall surface of a member, characterized in that the fixing member contains a radio wave absorbing material at least in a portion near the probe needle.
JP63127469A 1988-05-24 1988-05-24 Probe card Expired - Lifetime JP2634191B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63127469A JP2634191B2 (en) 1988-05-24 1988-05-24 Probe card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63127469A JP2634191B2 (en) 1988-05-24 1988-05-24 Probe card

Publications (2)

Publication Number Publication Date
JPH01296167A true JPH01296167A (en) 1989-11-29
JP2634191B2 JP2634191B2 (en) 1997-07-23

Family

ID=14960699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63127469A Expired - Lifetime JP2634191B2 (en) 1988-05-24 1988-05-24 Probe card

Country Status (1)

Country Link
JP (1) JP2634191B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055778A (en) * 1989-10-02 1991-10-08 Nihon Denshizairyo Kabushiki Kaisha Probe card in which contact pressure and relative position of each probe end are correctly maintained
US5134365A (en) * 1989-07-11 1992-07-28 Nihon Denshizairyo Kabushiki Kaisha Probe card in which contact pressure and relative position of each probe end are correctly maintained
US7138813B2 (en) 1999-06-30 2006-11-21 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236241A (en) * 1984-04-30 1985-11-25 カスケード・マイクロテツク・インコーポレイテツド Wafer probe

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236241A (en) * 1984-04-30 1985-11-25 カスケード・マイクロテツク・インコーポレイテツド Wafer probe

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5134365A (en) * 1989-07-11 1992-07-28 Nihon Denshizairyo Kabushiki Kaisha Probe card in which contact pressure and relative position of each probe end are correctly maintained
US5055778A (en) * 1989-10-02 1991-10-08 Nihon Denshizairyo Kabushiki Kaisha Probe card in which contact pressure and relative position of each probe end are correctly maintained
US7138813B2 (en) 1999-06-30 2006-11-21 Cascade Microtech, Inc. Probe station thermal chuck with shielding for capacitive current
US7355420B2 (en) 2001-08-21 2008-04-08 Cascade Microtech, Inc. Membrane probing system
US7492175B2 (en) 2001-08-21 2009-02-17 Cascade Microtech, Inc. Membrane probing system
US7492172B2 (en) 2003-05-23 2009-02-17 Cascade Microtech, Inc. Chuck for holding a device under test
US7876115B2 (en) 2003-05-23 2011-01-25 Cascade Microtech, Inc. Chuck for holding a device under test
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US8013623B2 (en) 2004-09-13 2011-09-06 Cascade Microtech, Inc. Double sided probing structures

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