JPH01294861A - Ion beam mixing method - Google Patents

Abstract

PURPOSE:To form a thin film excellent in adhesive strength and practically free from peeling by forming a thin film while allowing the radiation direction of sputtered target grains and the radiation direction of an ion beam for ion implantation to intersect each other in the inner part of a turning hollow cylindrical specimen. CONSTITUTION:A hollow cylindrical specimen 9 is inserted into a rotating shaft 1 and fixed to this rotating shaft 1 and a rotary motion is provided by means of a driving device 3, and the inside of a vacuum chamber 8 is evacuated to high vacuum. An Ar ion beam is radiated from an ion gun 5 to a Ti target 7, and an N2 ion beam is radiated from another ion gun 6. Ti grains sputtered from the target 7 by means of the Ar ion beam are allowed to adhere to the internal surface of the specimen 9, and, when the part to which Ti is allowed to adhere rotates in a 180-degree arc by the turning of the specimen 9, ions are implanted by means of the N2 ion beam from the lower part. The part into which ions are implanted is further rotated in a 180-degree arc to undergo the adhesion of Ti, and then rotated in a 180-degree arc to undergo ion implantation again. As the result of performing ion beam mixing by alternately repeating the thin film coating with Ti grains and the ion implantation as mentioned above, a TiN film having superior adhesive strength can be formed.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to an ion beam mixing method that simultaneously operates thin film coating and ion implantation to form a thin film by ion beam mixing on the inner surface of a hollow cylindrical sample. .

[Background of the invention]

The ion beam mixing method is a method in which thin film coating and ion implantation are performed simultaneously or alternately on the sample surface to form a thin film. It is used to produce excellent ceramic thin films such as TiN and TiC. Conventionally, in order to perform the above-mentioned ion beam mixing method in an ion beam sputtering apparatus equipped with two opposing ion guns in a vacuum chamber, the steps shown in FIGS.
There is a street. In the ion beam sputtering apparatus, an ion gun 5, 6, a target holder 4 to which a target 7 is attached, and a sample holder 10 to which a sample 9 is attached are arranged above and below a vacuum chamber 8, and the interior of the vacuum chamber 8 is kept in a high vacuum state during thin film formation. be placed. FIG. 3 shows a case in which samples are simultaneously irradiated. Taking TiN film formation as an example, the Ti target 7 is irradiated with an ion beam of inert gas such as argon from the upper ion gun 5 to knock out Ti particles and form a sample 9. T on the surface
Form a coating layer i. At the same time, lower ion gun 6
An active nitrogen ion beam is irradiated onto the surface of the sample 9 from the ion beam, and ion beam mixing is performed. At the initial stage of thin film formation, the surface of the sample is irradiated with a nitrogen ion beam, so nitrogen ions are injected into the surface of the sample 9, and the ions collide with the attached Ti particles, producing the effect of pushing the Ti particles into the interior of the sample 9. Therefore, mixing occurs near the boundary between the surface of the sample 9 and the thin film, forming a new layer in which Ti atoms, nitrogen atoms, and sample atoms are mixed. This mixed layer makes it possible to form a thin film that is difficult to peel off and has improved adhesion by several orders of magnitude compared to thin films produced by vacuum evaporation, ion blasting, sputtering, etc. In the same method, target particles and implanted ions need to be irradiated at the same location, and the sample shape in which a thin film can be formed is limited to a planar shape.

In addition, Figure 4 shows a case in which the coating shown in Figure (A) and the ion implantation shown in Figure (B) are repeated alternately, and the setting range of the ion implantation angle can be wider than in the case of Figure 3, but because of the alternating irradiation, The disadvantage is that it takes a long time to prepare the sample.

Therefore, in order to form a thin film by ion beam mixing on the inner surface of a hollow cylindrical sample using the conventional method using the above ion beam sputtering apparatus, the method shown in FIG. 4 must be devised.

[Purpose of the invention]

An object of the present invention is to eliminate the drawbacks of the prior art described above and to provide a method for forming an ion beam mixed thin film by simultaneously operating thin film coating and ion implantation on the inner surface of a hollow cylindrical sample.

[Summary of the invention]

The present invention provides an ion beam sputtering device equipped with two opposing ion guns in a vacuum chamber, and when forming a thin film on the inner surface of a hollow cylindrical sample, the coating is formed by attaching the sample to a rotating sample holder and rotating it. 1 side
Focusing on the direction of the ion gun that performs one ion implantation by rotation, the position of the sample was set so that the inner surface of the sample was irradiated with the coating and ion implantation intersecting, and the surface to be coated and ion implanted was Although they are separate, since the sample is rotated, if the rotation speed is increased, the same ion beam mixing effect as simultaneous irradiation can be obtained.

[Embodiments of the invention]

An embodiment of the present invention will be described below using the sample holder shown in FIG. The sample holder consists of a sample rotation shaft 1, which has a concave space in the center of the axis, a screw hole used for attaching the sample, and a screw hole used for attaching the shaft that transmits the striking force that rotates the sample; It is comprised of a drive transmission shaft 2 that transmits rotational force to a motor 1 and a rotational movement drive device 3 that generates rotational force.

FIG. 2 shows an embodiment of the present invention, in which the sample holder shown in FIG. This is a case where a ceramic thin film of TiN is formed on the inner surface of sample 9. The vacuum chamber 8 where the thin film is formed includes:
Ion gun used for thin film coating on top 5. At the bottom, an ion gun 6 for implanting ions, a target holder 4 for attaching a target 7 to be a thin film material, and the sample holder are arranged. After the sample 9 is inserted into the sample rotating shaft 1 of the sample holder, it is screwed and rotated by the rotational movement drive device 3 during film formation.

The interior of the empty chamber 8 at the initial stage of thin film formation is brought into a high vacuum state. The ion gun 5 emits an argon in-beam, the ion gun 6 emits a nitrogen ion beam, and the target 7 is made of Ti. The position of the sample 9 is set so that the target particles and the implanted ions intersect and are irradiated on the inner surface of the sample.

When the Ti target 7 is irradiated with an argon ion beam from the ion gun 5, Ti particles are ejected and adhere to the inner surface of the sample 9. Since the sample 9 is rotating, the portion to which Ti is attached is rotated 180 degrees and then irradiated with a nitrogen ion beam from the ion gun 6 from below to be ion-implanted. After rotating the ion-implanted part by 18°, Ti is attached, and then rotated by 180°.
After rotation, ions are implanted again. A TiN film is produced as a result of ion beam mixing in which adhesion, that is, thin film coating and ion implantation are alternately repeated.

Since the sample 9 is being rotated, increasing the rotation speed will speed up the irradiation cycle for thin film coating and ion implantation, resulting in the same ion beam mixing effect as when the above two types of processing are performed simultaneously, that is, the interaction between the sample 9 and the thin film. By forming a mixed layer between the two, a thin film with excellent adhesion and difficult to peel off can be produced.

〔Effect of the invention〕

According to the present invention, in an ion beam sputtering apparatus equipped with two opposing ion guns in a vacuum chamber, target particles sputtered inside a rotating hollow cylindrical sample and the irradiation direction of the ion beam for ion implantation are controlled. Since we have provided a method for producing a thin film by intersecting each other, it is possible to simultaneously operate thin film coating and ion implantation to uniformly form a thin film by ion beam mixing on the inner surface of a hollow cylindrical sample. Further, if a ceramic thin film such as TiN is formed on the inner surface of a slide bearing of the same shape according to the present invention, the service life can be extended due to the low abrasion properties of TiN.

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a sample holder used in carrying out the present invention;
FIG. 2 is a sectional view showing the basic components of an example of equipment necessary to carry out the method of the present invention, and FIGS. 3 and 4 show the basic components of an example of equipment necessary to carry out the conventional method. FIG. In the figure, 1 is a sample rotation axis, 2 is a drive transmission axis, 3 is a rotary motion thigh movement device, 4 is a target holder, 5 is an ion gun, 6 is an ion gun, 7 is a target, 9 is a sample, and 10 is a sample holder. It is. Name of patent applicant Hitachi Koki Co., Ltd.? /I! 1 2nd mouth 3rd figure 41!1

Claims (1)

[Claims] In an ion beam sputtering device equipped with two opposing ion guns in a vacuum chamber that mix target particles and implanted ions on the sample surface to form a thin film, a hollow cylindrical sample is rotatably held in a sample holder. Sputtered target particles are attached to the inner surface of a hollow cylindrical sample,
An ion beam mixing method characterized by forming a thin film by injecting ions at a position opposite to the position where the sample is deposited while rotating the hollow cylindrical sample.