JPH01283940A - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPH01283940A JPH01283940A JP63115244A JP11524488A JPH01283940A JP H01283940 A JPH01283940 A JP H01283940A JP 63115244 A JP63115244 A JP 63115244A JP 11524488 A JP11524488 A JP 11524488A JP H01283940 A JPH01283940 A JP H01283940A
- Authority
- JP
- Japan
- Prior art keywords
- oscillation
- oscillating
- bonding
- level
- electric energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 10
- 230000010355 oscillation Effects 0.000 claims abstract description 80
- 230000005284 excitation Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はワイヤボンディング方法の改良に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to an improvement in a wire bonding method.
第５図は従来一般に知られているこの種の方法であり、
図において、（１）はワイヤボンディングのためのボン
ディングツール、（２）はこのツーｌしく１）を励振す
る圧電子、（３）はこの圧電子（２＋の励振電源となる
出カドランス、（４）は励振電流レベルを検出するため
の低抵抗器、（５）は超音波発振器で・ツール（１）の
固有振動数に一致した周波数の電圧を予め定めたレベル
で出力する。（６）はこの起音波発振器（５）の発振時
間を設定する発振時間制御回路であり、起音波発振器（
５）と共にコントローラ部（７）を構成している。Figure 5 shows this type of method that is generally known in the past.
In the figure, (1) is a bonding tool for wire bonding, (2) is a piezoelectric that excites this tool (1), (3) is an output transformer that serves as an excitation power source for this piezoelectric (2+), (4) ) is a low resistor for detecting the excitation current level, and (5) is an ultrasonic oscillator that outputs a voltage with a frequency that matches the natural frequency of tool (1) at a predetermined level. This is an oscillation time control circuit that sets the oscillation time of this sonic wave oscillator (5).
5) together constitute a controller section (7).
次に動作について説明する。まず、コントローラ部（７
）の超音波発振器（５）でボンディングのツール（１）
の固有振動数に対応した周波数の電圧が第６図（ａ）の
ように所定レベルで出力される。このため、出カドラン
ス（３）を介し、圧電子（２１に励振［２が与えられ、
ツール（１］が超音波振動してワイヤボンディングがな
される。このボンディング時間は発振時間制御回路（６
）で設定され、その設定値で超音波発振器（５）が停止
される。ところで、コントローラ部（７）ではボンディ
ングされるチップに合せてボンディングに必要なパラメ
ータがティーチングされる。このパラメータの中で発振
条件の設定は難かしい点があり、特に発振重圧レベルと
発振時間は、使用者の経験と勘に頼るか又は試行錯誤に
より最適値に近づけて値を設定している。この発振条件
設定の難かしさは次に起因している。つまり、第１に、
ツールの振動周波数がボンディング面の影響を受けて共
振周波数からずれることになり、発振重圧レベルを第６
図（ａ）のように設定していても・第６図（ｂ） （ｃ
）のように発振電流レベルに差が発生すること。第２に
、発振時間及び発振漕圧レベルが小さければボンディン
グ面の接合力が弱くなり。Next, the operation will be explained. First, the controller section (7
) bonding tool (1) with ultrasonic oscillator (5)
A voltage having a frequency corresponding to the natural frequency of is outputted at a predetermined level as shown in FIG. 6(a). For this reason, excitation [2 is applied to the piezoelectric element (21) via the output transformer (3),
Wire bonding is performed by ultrasonic vibration of the tool (1).This bonding time is controlled by the oscillation time control circuit (6).
), and the ultrasonic oscillator (5) is stopped at the set value. By the way, parameters necessary for bonding are taught in the controller section (7) according to the chip to be bonded. Among these parameters, it is difficult to set the oscillation conditions, and in particular, the oscillation pressure level and oscillation time are set close to optimal values by relying on the user's experience and intuition or by trial and error. The difficulty in setting the oscillation conditions is due to the following. That is, firstly,
The vibration frequency of the tool is affected by the bonding surface and deviates from the resonant frequency, causing the oscillation pressure level to be reduced to 6.
Even if the settings are as shown in Figure (a), Figure 6 (b) (c
) that a difference occurs in the oscillation current level. Second, if the oscillation time and oscillation pressure level are small, the bonding force on the bonding surface will be weak.
ＩＣの信頼性が低下し、逆に大きければ接合力が強くな
りすぎ、ＩＣに不必要な衝撃を与えて同様に信頼性が低
下すること。第３に、発振時間が長い場合には接合力は
向上するがボンディングに時間がかかり過ぎて生産性の
低下をもたらすことなどである。従って、発振電圧レベ
ルと、発振時間の設定にあたっては、発振電圧レベルを
余り大とせずに、発振時間を長くして確実にボンディン
グするよう考慮される。The reliability of the IC decreases, and conversely, if the bonding force is too large, the bonding force becomes too strong, giving unnecessary shock to the IC, which also decreases the reliability. Thirdly, if the oscillation time is long, bonding strength is improved, but bonding takes too much time, resulting in a decrease in productivity. Therefore, when setting the oscillation voltage level and oscillation time, consideration is given to ensuring bonding by lengthening the oscillation time without increasing the oscillation voltage level too much.
従来のワイヤボンディング方法では、予め発振電圧レベ
ルや発振時間が設定されており、例えば発振電圧レベル
はボンディング面に大きな衝撃を与えない程度の値に定
められ、また、発振時間は確実にボンディングできるよ
う第７図Ｃｂ）のｔ２のように比較的長く定められるた
め、ボンディング時開が長くなり、生産性に劣るばかり
でなく、第７図（ｂ）のように、発振電圧レベルにかか
わらず一定のボンディング時間ｔ２となるため、発振電
圧レベルが大の場合はその値で長時間もボンディングさ
れ、チップに損傷を与えるばかりでなく、各チ、。In conventional wire bonding methods, the oscillation voltage level and oscillation time are set in advance. For example, the oscillation voltage level is set to a value that does not give a large impact to the bonding surface, and the oscillation time is set to a value that does not cause a large impact on the bonding surface, and the oscillation time is set to a value that does not cause a large impact on the bonding surface. Since t2 is set relatively long as shown in Fig. 7Cb), the opening time during bonding becomes long, which not only leads to poor productivity, but also as shown in Fig. 7(b). Since the bonding time is t2, if the oscillation voltage level is high, bonding will continue for a long time at that value, not only damaging the chip but also causing damage to each chip.
プによってボンディング面の接合力にばらつきが発生し
、信頼性が低下するという課題があった。There was a problem in that the bonding strength of the bonding surface varied due to the bonding process, reducing reliability.
この発明は上記のような従来の課題を解消するためにな
されたもので、チップを最適な発振電圧レベルで、最適
な発振時間だけボンディングでき、信頼性や生産性を向
上できるワイヤボンディング方法を得ることを目的とす
る。This invention was made to solve the above-mentioned conventional problems, and provides a wire bonding method that can bond chips at an optimal oscillation voltage level and for an optimal oscillation time, improving reliability and productivity. The purpose is to
この発明の第１の発明にかかるワイヤボンディング方法
は、ボンディング時において励振ゴ源に発生する発振電
圧レベルと発振両流レベルとで電力を演算して積算し、
このｍ算値が予め定めた電力量となった時に超音波発振
を停止するようにしたものである。The wire bonding method according to the first aspect of the present invention calculates and integrates the power from the oscillation voltage level generated in the excitation source and the oscillation current level during bonding,
Ultrasonic oscillation is stopped when this calculated value of m reaches a predetermined amount of power.
また・この発明の別の発明マは５発振主流レベルが設定
値より小さい場合には発振電圧レベルを上昇させるよう
にしたものである。Another aspect of the present invention is that the oscillation voltage level is raised when the 5-oscillation mainstream level is smaller than a set value.
この発明の第１の発明では、発振主流レベルをモニタし
、この発振電流レベルと発振電圧レベルとの積算７カ量
か、予め定められた電力量になった時点で自動的に発振
が停止され、ボンディング時間が短縮される。In the first aspect of the present invention, the oscillation main stream level is monitored, and the oscillation is automatically stopped when the cumulative amount of the oscillation current level and the oscillation voltage level or the predetermined amount of electric power is reached. , bonding time is reduced.
また、この発明の別の発明では、発振電流レベルが実用
発振電流レベル以下であ−ても、その値が検出されると
、発振電圧レベルが大となり、発振電流レベルが上昇し
、ボンディングが確実化され且つ生産性も向上される。Further, in another invention of the present invention, even if the oscillation current level is below the practical oscillation current level, when that value is detected, the oscillation voltage level increases, the oscillation current level increases, and bonding is ensured. This also improves productivity.
以下、この発明の一実施例を第１図で説明する。 An embodiment of the present invention will be described below with reference to FIG.
図において、（８）は発振電圧レベルを検出する発振電
圧検出手段、（９）は発振電流レベルを検出する発振電
流検出手段、ＱＯは上記発振電圧検出手段（８）の出力
と発振電流検出手段（９）の出力とを乗算し、電力量を
演算する電力量演算手段で、その電力量が設定電力量に
なると発振時間制御回路（６）を動作させて超音波発振
器（５）の発振動作を停止させる。その他の符号の説明
は従来装置と同様につき省略する。In the figure, (8) is an oscillation voltage detection means for detecting the oscillation voltage level, (9) is an oscillation current detection means for detecting the oscillation current level, and QO is the output of the oscillation voltage detection means (8) and the oscillation current detection means. (9) is multiplied by the output of the ultrasonic oscillator (5) to operate the oscillation time control circuit (6) to start the oscillation of the ultrasonic oscillator (5). to stop. Descriptions of other symbols are omitted as they are the same as in the conventional device.
次に動作について説明する。まず、発振電圧レベルと発
振電流レベルは夫々発振電圧検出手段（８）と発振電流
検出手段（９）で検出されており、この夫々の値が電力
量演算手段αＯで乗算されることにより、電力量が積算
される。この電力量は設定値と比較され、設定値になる
と発振時間制御回路（６）に停止動作指令を与える。従
って、超音波発振器（５）には発振時間制御回路（６）
から発振停止指令が入力され、超音波発振を停止する。Next, the operation will be explained. First, the oscillation voltage level and the oscillation current level are detected by the oscillation voltage detection means (8) and the oscillation current detection means (9), respectively, and these respective values are multiplied by the electric energy calculation means αO to calculate the electric power. The amount is accumulated. This amount of electric power is compared with a set value, and when it reaches the set value, a stop operation command is given to the oscillation time control circuit (6). Therefore, the ultrasonic oscillator (5) has an oscillation time control circuit (6).
An oscillation stop command is input from , and the ultrasonic oscillation is stopped.
これを第２図で詳述すると、第２図（ａ）のようにツー
ル（１）がボンデイング面に着地すると、ｔ１後に超音
波発振器（５）から発振され、ボンディングを開始する
。ここで、発振電流レベルが、第２図（ｂ）の１１のよ
うに大なる時には、電力量演算手段αＯでは短時間で所
定の電力量となるため、発振時間制御回路（６）を介し
超音波発振器（５）がｔ４のように短時間で発振を停止
する。This will be explained in detail with reference to FIG. 2. When the tool (1) lands on the bonding surface as shown in FIG. 2(a), the ultrasonic oscillator (5) emits oscillations after t1 and starts bonding. Here, when the oscillation current level is large as shown in 11 in FIG. 2(b), the power amount calculation means αO reaches the predetermined power amount in a short time, so the oscillation time control circuit (6) The sound wave oscillator (5) stops oscillating in a short time like t4.
また、発振９流レベルが■１、■、と小さくなるにつ１
、ボンディング時間はｔ６、ｔ６のように長くなる。Also, as the oscillation 9 current level decreases from ■1 to ■, 1
, the bonding time becomes longer as t6, t6.
このように、ＩＣチップには最適な超音波発振電力量が
印加されることになり、例えば従来の第７図（ｂ）と比
較すると、３ｔ２ ＞ ｔａ ＋ ｔ３ ＋ ｔ＠
のようにボンディング時間が短縮される。また、ＩＣチ
ッ・プに対しても過剰なボンディングが防止される。In this way, the optimal amount of ultrasonic oscillation power is applied to the IC chip, and for example, when compared with the conventional figure 7(b), 3t2 > ta + t3 + t@
Bonding time is reduced as shown in FIG. Further, excessive bonding to the IC chip is also prevented.
次にこの発明の他の発明を第３図で説明する。Next, another invention of this invention will be explained with reference to FIG.
図において、０℃は予め設定された発振電流レベルにな
るよう超音波発振器（５）の発振電圧レベルを上昇させ
るべくフィードバック制御する自動利得制御手段で、発
振電流レベルの設定値は、予め内部に設定しても良く、
また、ラーチングして設定しても良い。その他の符号の
説明は従来装置と同様であるので省略する。In the figure, 0°C is an automatic gain control means that performs feedback control to increase the oscillation voltage level of the ultrasonic oscillator (5) so that it reaches a preset oscillation current level. You can also set
Alternatively, it may be set by learning. Descriptions of other symbols are omitted because they are the same as those of the conventional device.
上記の様に構成されたものにおいては、発振電流検出手
段（９）が発振慣流レベルを検出した際に、その値が設
定値よりも小さい場合には、超音波発振器（５）の発振
電圧レベルを大とするようフィードバック制御する。従
って、ボンディング面の条件が悪くて発振電流レベルが
小さい場合であ−ても、第４図ら）のようにそのレベル
を大になされる。In the device configured as described above, when the oscillation current detection means (9) detects the oscillation current level, if the value is smaller than the set value, the oscillation voltage of the ultrasonic oscillator (5) Feedback control is performed to increase the level. Therefore, even if the bonding surface conditions are poor and the oscillation current level is low, the level is increased as shown in FIG. 4, etc.
このため、電力演算手段ＯＱでの積算漕力量が短時間で
設定電力量に達するので、超音波発振器（５）の発振時
間を小さくできることになる。つまり、従来の第７図（
ｂ）に比較すると、第４図のボンディング時間は３ ｔ
２ ＞ ３ ｔ７のように短縮され、しかも、確実にボ
ンディングできることになる。また、電力量演算手段Ｑ
ｄを用いて電力量で発振時間を制御しているので、ＩＣ
チップに対して過剰なボンディングが防止されることは
第１図の実施例の場合と同様である。Therefore, the integrated rowing force amount in the power calculation means OQ reaches the set power amount in a short time, so that the oscillation time of the ultrasonic oscillator (5) can be reduced. In other words, the conventional figure 7 (
b), the bonding time in Fig. 4 is 3 t
It is shortened to 2 > 3 t7, and moreover, bonding can be performed reliably. In addition, the electric power calculation means Q
Since the oscillation time is controlled by the amount of power using d, the IC
Similar to the embodiment of FIG. 1, excessive bonding to the chip is prevented.
なお、電力量の演算はアナログ回路による積分器や、デ
ジタル回路によるデジタル演算等が考えられるが特にこ
れらを限定するものではない。Note that the calculation of the amount of power may be performed using an integrator using an analog circuit, a digital calculation using a digital circuit, etc., but is not particularly limited to these.
以上のようにこの発明は、ボンディング時において励振
９源に発生する発振電圧レベルと発振電流レベルとで電
力を演算して積算し、この積算値が予め定めた漕力量と
なった時１ζ超音波発振を停止するようにしたので、ボ
ンディング時間を短縮でき生産性が向上する効果がある
。As described above, the present invention calculates and integrates power from the oscillation voltage level and oscillation current level generated in nine excitation sources during bonding, and when this integrated value reaches a predetermined amount of rowing force, 1ζ ultrasonic wave Since the oscillation is stopped, bonding time can be shortened and productivity can be improved.
また、この発明の別の発明では、発振電流レベルが設定
値より小さい場合には発振重圧レベルを上昇させるよう
にしたので、ボンディング時間の短縮をより一層図るこ
とができると共に、ボンディングの信頼性も向上できる
効果がある。Further, in another invention of the present invention, the oscillation pressure level is increased when the oscillation current level is smaller than the set value, so that the bonding time can be further shortened and the bonding reliability can be improved. There is an effect that can be improved.
第１図はこの発明の一実施例を示すブロック図、第２図
はその動作波形図、第３図はこの発明の他の実施例を示
すブロック図、第４図はその動作波形図％第５図は従来
装置のブロック図、第６図はその動作波形図、第７図は
第５図の発振電流レベルを示す動作波形図である。図中
、（８）は発振電圧検出手段、（９）は発振電流検出手
段、αｄは電力量演算手段、α力は自動利得制御手段で
ある。
なお、各図中同一符号は同−又は相当部分を示す。FIG. 1 is a block diagram showing one embodiment of this invention, FIG. 2 is an operating waveform diagram thereof, FIG. 3 is a block diagram showing another embodiment of this invention, and FIG. 4 is an operating waveform diagram thereof. 5 is a block diagram of the conventional device, FIG. 6 is an operating waveform diagram thereof, and FIG. 7 is an operating waveform diagram showing the oscillation current level of FIG. 5. In the figure, (8) is an oscillation voltage detection means, (9) is an oscillation current detection means, αd is a power amount calculation means, and α power is an automatic gain control means. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (2)
電圧レベルと発振電流レベルとで電力を演算して積算し
、この積算値が予め定めた電力量となった時に超音波発
振を停止するようにしたワイヤボンディング方法。(1) Power is calculated and integrated using the oscillation voltage level and oscillation current level generated in the excitation power supply during bonding, and when this integrated value reaches a predetermined amount of power, ultrasonic oscillation is stopped. Wire bonding method.
電圧レベルを上昇させるようにした特許請求の範囲第１
項記載のワイヤボンディング方法。(2) Claim 1 in which the oscillation voltage level is increased when the oscillation current level is smaller than a set value.
Wire bonding method described in section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63115244A JPH077785B2 (en) | 1988-05-11 | 1988-05-11 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63115244A JPH077785B2 (en) | 1988-05-11 | 1988-05-11 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01283940A true JPH01283940A (en) | 1989-11-15 |
| JPH077785B2 JPH077785B2 (en) | 1995-01-30 |
Family
ID=14657912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63115244A Expired - Lifetime JPH077785B2 (en) | 1988-05-11 | 1988-05-11 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH077785B2 (en) |
-
1988
- 1988-05-11 JP JP63115244A patent/JPH077785B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH077785B2 (en) | 1995-01-30 |
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