JPH01283735A - Electron beam generating apparatus - Google Patents
Electron beam generating apparatusInfo
- Publication number
- JPH01283735A JPH01283735A JP63111546A JP11154688A JPH01283735A JP H01283735 A JPH01283735 A JP H01283735A JP 63111546 A JP63111546 A JP 63111546A JP 11154688 A JP11154688 A JP 11154688A JP H01283735 A JPH01283735 A JP H01283735A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- electron beam
- potential
- regulating means
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000001105 regulatory effect Effects 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/316—Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
- H01J2201/3165—Surface conduction emission type cathodes
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、絶縁基板上に形成された電子放出素子を具備
する電子線発生装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an electron beam generating device including an electron-emitting device formed on an insulating substrate.
［開示の概要］
本明細書及び図面は、絶縁基板上に形成された電子放出
素子を具備する電子線発生装置において、電子放出素子
の近傍に電位規定手段を設けることにより、電子ビーム
の軌道の不安定性を解消する技術を開示するものである
。[Summary of the Disclosure] This specification and the drawings describe an electron beam generating device that includes an electron-emitting device formed on an insulating substrate, in which the trajectory of the electron beam is controlled by providing a potential regulating means in the vicinity of the electron-emitting device. The present invention discloses a technique for eliminating instability.
〔従来の技術］
従来、簡単な構造で電子の放出が得られる素子として、
例えば、エム アイ エリンソン（Ｍ、 ＩＥｌｉｎｓ
ｏｎ）等によって発表された冷陰極素子が知られている
。〔ラジオ エンジニアリング エレクトロンフィシ４
−／ス （Ｒａｄｉｏ Ｅｎｇ、 Ｅｌｅｃｔｒｏｎ。[Prior art] Conventionally, as an element that can emit electrons with a simple structure,
For example, M.I.Elins
A cold cathode device announced by et al. on) is known. [Radio Engineering Electronifice 4
-/su (Radio Eng, Electron.
Ｐｈｙｓ、）第１０巻、 １２９０〜１２９８頁、 １
９１３５年Ｊこれは、絶縁基板上に形成された小面蹟の
薄膜に、膜面に平行に電流を流すことにより、電子放出
が生ずる現象を利用するもので、一般には表面伝導形電
子放出素子（以下、電子放出素子という）と呼ばれてい
る。Phys,) Volume 10, pp. 1290-1298, 1
9135J This utilizes the phenomenon in which electrons are emitted by passing a current parallel to the surface of the thin film formed on the insulating substrate, and is generally used in surface conduction electron-emitting devices. (hereinafter referred to as an electron-emitting device).
この電子放出素子としては、前記エリンソン等により開
発された５ｎ０２（Ｓｂ）ｆ’！膜を用いたもの、Ａｕ
薄膜によるもの［ジー、ディトマー“スインソリド ７
４ ルムス” （Ｇ、 Ｄｉｔｔｍｅｒ： ” Ｔｈ１
ｎ ＳｏｌｉｄＦｉｌｍｓ” 、 ９巻、３１７頁、
（１９７２年）Ｊ、１丁０薄膜によるもの［エム ハー
トウェル アンド シージー フォンスタッド“アイ
イー イー イートランス”イー デイ−コンク （Ｍ
、 Ｈａｒｔｗｅｌｌａｎｄ Ｃ，Ｇ、Ｆｏｎｓｔａ
ｄ ： ”ＩＥＥＥ Ｔｒａｎｓ、 ＥＤ
Ｃｏｎｆ、” ）５１Ｂ頁、 （１９７５年）］、カ
ーボン薄膜によるもの［荒木久他：゛真空°゛、第２６
巻、第１号、２２頁。This electron-emitting device is the 5n02(Sb)f'! developed by Ellingson et al. Those using membrane, Au
Thin film [G., Dittmar “Sinsolid 7]
4 Lumus” (G, Dittmer: ” Th1
n Solid Films”, volume 9, page 317,
(1972) J, 1-0 thin film [M. Hartwell and C.G. Fonstad “I.
E E E Trans” E D Conch (M
, Hartwelland C, G, Fonsta
d: “IEEE Trans, ED
Conf, ”) p. 51B, (1975)], by carbon thin film [Hisashi Araki et al.: “Vacuum °”, No. 26
Volume, No. 1, p. 22.
（１９８３年）］などが報告されている。(1983)] have been reported.
これらの電子放出素子は。These electron-emitting devices.
り高い電子放出効率が得られる
２） ４ＸＩＪ造が簡単であるため、製造が容易である
３）同一基板上に多数の素子を配列形成できる４）応答
速度が速い
等の利点があり、これを用いた電子線発生装置は、画像
表示装置の電子源としての応用が期待されている・
［発明が解決しようとする課題］
第４図は、従来の電子線発生装置を用いた画像表示装置
の説明図である０図において、１はたとえばガラスを材
料とする絶縁基板、２は金属もしくは金属酸化物もしく
はカーボンなどを材料とする薄膜で、その中間部には従
来公知のフォーミング処理により、電子放出部５が形成
されている。2) It is easy to manufacture because the 4XIJ structure is simple. 3) A large number of elements can be arrayed on the same substrate. 4) It has the advantages of fast response speed. The electron beam generator used is expected to be applied as an electron source for image display devices. [Problem to be solved by the invention] Figure 4 shows a diagram of an image display device using a conventional electron beam generator. In Figure 0, which is an explanatory drawing, 1 is an insulating substrate made of glass, for example, 2 is a thin film made of metal, metal oxide, carbon, etc., and the middle part is formed by a conventional forming process to emit electrons. A portion 5 is formed.
３と４は薄膜２に電圧を印加するために設けられた電極
で、３を正極、４を負極として用いる、電子放出素子１
００は、この２〜５の部材により構成される。６はガラ
ス板で、その内面には透明電極７を介して蛍光体ターゲ
ット８が設けられている。Electrodes 3 and 4 are provided for applying voltage to the thin film 2, and 3 is used as a positive electrode and 4 is used as a negative electrode.
00 is composed of these 2 to 5 members. Reference numeral 6 denotes a glass plate, on the inner surface of which a phosphor target 8 is provided via a transparent electrode 7.
上記装置において、透明電極７に例えば１０ｋＶの加速
電圧を印加し、同時に電極３と４の間に所定の電圧を印
加すれば、電子放出部５から電子ビームが放出され、蛍
光体ターゲット８が発光する。In the above device, if an accelerating voltage of, for example, 10 kV is applied to the transparent electrode 7 and a predetermined voltage is simultaneously applied between the electrodes 3 and 4, an electron beam is emitted from the electron emitting section 5 and the phosphor target 8 emits light. do.
しかしながら、従来の電子放出素子を用いた装置では、
電子ビームの軌道が安定せず、蛍光体スポットの形状が
変化してしまい、表示画像の品位が低下するという問題
点があった。これは電子放出素子の形成された絶縁基板
１の電位が不安定であり、電子ビームがその影響を受け
るからである。このような現象は、表示装置に限らず電
子放出素子を電子源とする電子線発生装置に特有の問題
であった・
本発明は、上記従来技術に鑑み、電子ビームの軌道を安
定させ、高品位の画像表示を実現する電子線発生装置を
提供することを目的とする。However, in devices using conventional electron-emitting devices,
There was a problem in that the trajectory of the electron beam was not stable, the shape of the phosphor spot changed, and the quality of the displayed image deteriorated. This is because the potential of the insulating substrate 1 on which the electron-emitting devices are formed is unstable, and the electron beam is affected by it. Such a phenomenon is a problem not only for display devices but also for electron beam generators that use electron-emitting devices as electron sources. An object of the present invention is to provide an electron beam generator that realizes high-quality image display.
［課題を解決するための手段］
本発明者らは、特に第４図の斜線で示した電子放出部５
の周辺部の電位が、電子ビームの軌道に太きく関与する
ことを見い出し本発明を完成するに到った。すなわち本
発明による電子線発生装置は、絶縁基板上に形成された
電子放出素子の近傍に、基板の表面電位を規定する電位
規定手段を設けたことを特徴とするものである。[Means for Solving the Problems] In particular, the present inventors have developed an electron-emitting section 5 indicated by diagonal lines in FIG.
It was discovered that the electric potential around the periphery of the electron beam greatly affects the trajectory of the electron beam, and the present invention was completed. That is, the electron beam generating device according to the present invention is characterized in that potential regulating means for regulating the surface potential of the substrate is provided in the vicinity of the electron-emitting device formed on the insulating substrate.
［作 用］
上記構成によれば、電子放出部近傍に常に一定の電位が
付与されることになる。したがって、電子ビームは表面
電位の変動等による影響を受けることなく、安定した軌
道で飛翔する。[Function] According to the above configuration, a constant potential is always applied to the vicinity of the electron emitting section. Therefore, the electron beam flies in a stable trajectory without being affected by changes in surface potential.
［実施例］ 第１図は本発明の第１の実施例を示すもので。[Example] FIG. 1 shows a first embodiment of the present invention.
電子放出素子の平面図である０図中１〜５は第４図の同
−符号部に対応し、同等部分を示す、９は絶縁基板１の
電子放出素子近傍の表面電位を規定する電極であって、
電位規定手段である。電極９としては、例えばＡ（ｊ＊
Ａｕ、 Ｏｒ、 Ａｇ＋ Ｃｕ、 Ｎ＋、 Ｎｏ等の
金属あるいはこれらの合金、あるいはＳｎＯ２゜ＩＴＯ
等の金属酸化物に代表される導電性材料が好適に用いら
れる。これらの導電性材料は、例えば蒸着、メツキ等の
製膜技術と、フォトリングラフィーやレーザー加工をは
じめとする各種パターニング技術を組み合せるか、ある
いは厚膜印刷技術等を用いることにより容易に形成する
ことができる。In Figure 0, which is a plan view of an electron-emitting device, 1 to 5 correspond to the same reference numerals in FIG. There it is,
It is a potential regulating means. As the electrode 9, for example, A(j*
Metals such as Au, Or, Ag+ Cu, N+, No, or alloys thereof, or SnO2゜ITO
Conductive materials typified by metal oxides such as the like are preferably used. These conductive materials can be easily formed by combining film forming techniques such as vapor deposition and plating with various patterning techniques such as photolithography and laser processing, or by using thick film printing techniques. be able to.
なお、第１図においては、絶縁基板ｌの表面が露出して
いる部分を斜線で示し、他の構成要素を白地で示す。In FIG. 1, the exposed surface of the insulating substrate l is shown with diagonal lines, and other components are shown with white background.
上記構成において、電極３と４の間に所定の電圧を印加
すると共に、電極９に電圧を印加して素子の駆動を行な
ったところ、電子ビーム軌道が安定し、良好な表示画像
を得ることができた。In the above configuration, when a predetermined voltage is applied between electrodes 3 and 4 and a voltage is applied to electrode 9 to drive the element, the electron beam trajectory becomes stable and a good display image can be obtained. did it.
ここで電極９と電子放出部５との間にはりｌの隙間が設
けられている。これは、電子放出素子と電極９との間で
短絡や放電が生じるのを防止するためのもので、このＷ
ｌの長さは電子放出素子と電極９との電位差により適宜
決定される。電子放出素子の電子放出部５に印加すべき
駆動電圧は、素子の材料や大きさ、形状により異なるた
め、電極９との間の電位差も場合によってそれぞれ異な
る。Here, a gap of a beam l is provided between the electrode 9 and the electron emitting section 5. This is to prevent a short circuit or discharge from occurring between the electron-emitting device and the electrode 9, and this W
The length of l is appropriately determined depending on the potential difference between the electron-emitting device and the electrode 9. Since the driving voltage to be applied to the electron emitting portion 5 of the electron emitting device differs depending on the material, size, and shape of the device, the potential difference between it and the electrode 9 also differs depending on the case.
本発明者らが多種の素子について実験した結果。The results of experiments conducted by the inventors on various types of elements.
ＷｌをｌμＩＩ〜５００μ腸の範囲の長さにすることに
より、電子ビームの軌道の安定性がより向上し、同時に
素子との絶縁性が維持でき、また製造時の歩留りを向上
させることができた。By setting Wl to a length in the range of lμII to 500μ, the stability of the electron beam trajectory was further improved, and at the same time insulation with the device could be maintained, and the manufacturing yield could be improved. .
なお、電子放出素子への配線と平行する部分の隙間Ｗ２
は、電気容量を低減するために、旧よりも大きくとられ
ている。Note that the gap W2 in the part parallel to the wiring to the electron-emitting device
has been made larger than the old one to reduce capacitance.
また、本発明者らの実験によれば、電極９に印加する電
位をｖｓ、電子放出素子の正極に印加する電位をＶｆａ
、負極に印加する電位をＶｆｃ とした時、 Ｖｆｃ
≦Ｖｓ≦Ｖｆａの範囲にＶｓを設定することにより、Ｗ
ｔをより小さくすることができ、良好な結果が得られた
。Also, according to the experiments conducted by the present inventors, the potential applied to the electrode 9 is vs, and the potential applied to the positive electrode of the electron-emitting device is Vfa.
, when the potential applied to the negative electrode is Vfc, Vfc
By setting Vs in the range of ≦Vs≦Vfa, W
It was possible to make t smaller, and good results were obtained.
第２図は１本発明の第２実施例を示すもので、第１図と
同様、電子放出素子の形成された絶縁基板の平面図であ
る。図中１．２．３及び５の各構成要素は第１図の場合
と同様であるが、本実施例では、電子放出素子の電極４
（負極）と電位規定手段９が一体化して、電極１０とし
て形成されている０本実施例によれば、第１図と比較し
て１表面型位を規定するための電極９への配線を別途設
ける必要がないことから、配線パターンを単純化でき、
取り出しａ数の増加を招くこともない、したがって多数
の電子放出素子を同一基板上に並べたマルチ電子源を構
成する際、第１図の形態よりも配列ピッチを小さくする
ことができる。また、取り出し線数が少ないため、外部
との結線が容易で、製造コストを低減できるうえ、電位
規定手段のために、電気回路を追加する必要がないので
、製造コストや消費電力を低減することができる。FIG. 2 shows a second embodiment of the present invention, and, like FIG. 1, is a plan view of an insulating substrate on which electron-emitting devices are formed. The components 1, 2, 3 and 5 in the figure are the same as those in FIG. 1, but in this example, the electrode 4 of the electron-emitting device
According to this embodiment, in which the negative electrode (negative electrode) and the potential regulating means 9 are integrated to form the electrode 10, the wiring to the electrode 9 for defining the surface type position is reduced compared to FIG. Since there is no need to provide a separate wiring pattern, the wiring pattern can be simplified.
This does not cause an increase in the number of electrons to be taken out, and therefore, when constructing a multi-electron source in which a large number of electron-emitting devices are arranged on the same substrate, the arrangement pitch can be made smaller than in the embodiment shown in FIG. In addition, since the number of lead-out wires is small, it is easy to connect to the outside, which reduces manufacturing costs.There is also no need to add an electric circuit for potential regulation means, which reduces manufacturing costs and power consumption. I can do it.
なお、第２図においては電位規定手段と電子放出素子の
負極とを一体化したが、電子放出素子の正極と一体化し
たものであっても良い。Although the potential regulating means and the negative electrode of the electron-emitting device are integrated in FIG. 2, they may be integrated with the positive electrode of the electron-emitting device.
あるいは、第３図に示すように、電子放出素子の正極と
一体化させた電極１２と、負極と一体化させた電極１１
の両方を設けるものであっても構わない。Alternatively, as shown in FIG. 3, the electrode 12 is integrated with the positive electrode of the electron-emitting device, and the electrode 11 is integrated with the negative electrode.
It is also possible to provide both.
上記実施例では、ガラス基板上に電子放出素子が形成さ
れている電子線発生装置を例に説明したが、本発明の適
用はこれに限定されるものではない、すなわち、基板材
質はガラスに限らず、たとえば、セラミクス等の高絶縁
性を有するものであれば、電位不定により電子ビーム軌
道が不安定になる問題は発生し易い、このような場合に
本発明を適用すれば、電位不定を改善することができる
。また、電子放出素子も、表面伝導形電子放出素子だけ
に限定されるものではなく、絶縁基板上に形成され、電
子放出素子辺の電位が不安定な素子であれば、本発明の
適用により、電子ビームの軌道を安定化させることが可
能である。In the above embodiment, an electron beam generator in which an electron-emitting device is formed on a glass substrate was explained as an example, but the application of the present invention is not limited to this. In other words, the substrate material is limited to glass. For example, if the material has high insulating properties such as ceramics, the problem that the electron beam trajectory becomes unstable due to potential instability is likely to occur.If the present invention is applied to such cases, the potential instability can be improved. can do. Further, the electron-emitting device is not limited to only the surface conduction type electron-emitting device, but can be formed on an insulating substrate and the potential on the side of the electron-emitting device is unstable, by applying the present invention. It is possible to stabilize the trajectory of the electron beam.
［発明の効果］
以上説明したように、本発明によれば、絶縁基板上に形
成された電子放出素子の近傍に、表面電位を規定する電
位規定手段を設けることにより。[Effects of the Invention] As described above, according to the present invention, a potential regulating means for regulating a surface potential is provided in the vicinity of an electron-emitting device formed on an insulating substrate.
従来問題となっていた電子ビーム軌道の不安定性を解決
でき、高品位の画像表示を実現することができる。The conventional problem of instability in the electron beam trajectory can be solved, and high-quality image display can be realized.
第１図〜第３図は本発明の各実施例を示す電子放出素子
の平面図、第４図は従来装置の説明図である。
１・・・絶縁基板
２・・・薄膜
３・・・電極（正極）
４・・・電極（負極）
５・・・電子放出部
９〜１２・・・電極（電位規定手段）
１００・・・電子放出素子1 to 3 are plan views of electron-emitting devices showing various embodiments of the present invention, and FIG. 4 is an explanatory diagram of a conventional device. 1... Insulating substrate 2... Thin film 3... Electrode (positive electrode) 4... Electrode (negative electrode) 5... Electron emission parts 9-12... Electrode (potential regulating means) 100... electron-emitting device
Claims (5)
を有する電子放出素子の近傍に前記絶縁基板の表面電位
を規定するための電位規定手段を設けたことを特徴とす
る電子線発生装置。(1) An electron beam generator characterized in that a potential regulating means for regulating the surface potential of the insulating substrate is provided in the vicinity of an electron-emitting element having a positive electrode and a negative electrode formed of a thin film on an insulating substrate. .
ことを特徴とする第１項記載の電子線発生装置。(2) The electron beam generating device according to item 1, wherein the potential regulating means is an electrode made of a conductive material.
〜５００μｍであることを特徴とする第１項記載の電子
線発生装置。(3) The distance between the potential regulating means and the electron-emitting device is 1 μm
2. The electron beam generating device according to claim 1, wherein the electron beam generating device has a diameter of 500 μm.
、負極に印加する電位をＶ＿ｆ＿ｃ、電位規定手段の電
位をＶ＿ｓとした時、Ｖ＿ｓはＶ＿ｆ＿ｃ≦Ｖ＿ｓ≦Ｖ
＿ｆ＿ａの範囲に含まれる電位であることを特徴とする
第１項記載の電子線発生装置。(4) The potential applied to the positive electrode of the electron-emitting device is V_f_a
, when the potential applied to the negative electrode is V_f_c and the potential of the potential regulating means is V_s, V_s is V_f_c≦V_s≦V.
2. The electron beam generating device according to claim 1, wherein the potential is within the range of _f_a.
極の少なくとも一方が一体化して設けられたことを特徴
とする第１項記載の電子線発生装置。(5) The electron beam generating device according to item 1, wherein the potential regulating means and at least one of the positive electrode and the negative electrode of the electron-emitting device are provided integrally.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11154688A JP2630985B2 (en) | 1988-05-10 | 1988-05-10 | Electron beam generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11154688A JP2630985B2 (en) | 1988-05-10 | 1988-05-10 | Electron beam generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01283735A true JPH01283735A (en) | 1989-11-15 |
| JP2630985B2 JP2630985B2 (en) | 1997-07-16 |
Family
ID=14564120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11154688A Expired - Fee Related JP2630985B2 (en) | 1988-05-10 | 1988-05-10 | Electron beam generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2630985B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01298624A (en) * | 1988-05-26 | 1989-12-01 | Canon Inc | Electron beam generator |
| JPH0714501A (en) * | 1993-06-22 | 1995-01-17 | Nec Corp | Field emission cold cathode and electron gun therewith |
| JPH07296717A (en) * | 1994-04-26 | 1995-11-10 | Nec Corp | Electric field discharging type cold negative electrode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5193660A (en) * | 1975-02-14 | 1976-08-17 | ||
| JPS6313247A (en) * | 1986-07-04 | 1988-01-20 | Canon Inc | Electron emission device and its manufacture |
-
1988
- 1988-05-10 JP JP11154688A patent/JP2630985B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5193660A (en) * | 1975-02-14 | 1976-08-17 | ||
| JPS6313247A (en) * | 1986-07-04 | 1988-01-20 | Canon Inc | Electron emission device and its manufacture |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01298624A (en) * | 1988-05-26 | 1989-12-01 | Canon Inc | Electron beam generator |
| JPH0714501A (en) * | 1993-06-22 | 1995-01-17 | Nec Corp | Field emission cold cathode and electron gun therewith |
| JPH07296717A (en) * | 1994-04-26 | 1995-11-10 | Nec Corp | Electric field discharging type cold negative electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2630985B2 (en) | 1997-07-16 |
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