JPH01281475A - Image forming method - Google Patents
Image forming methodInfo
- Publication number
- JPH01281475A JPH01281475A JP63110494A JP11049488A JPH01281475A JP H01281475 A JPH01281475 A JP H01281475A JP 63110494 A JP63110494 A JP 63110494A JP 11049488 A JP11049488 A JP 11049488A JP H01281475 A JPH01281475 A JP H01281475A
- Authority
- JP
- Japan
- Prior art keywords
- image
- light
- electrophotographic photoreceptor
- curved surface
- coherent light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 21
- 230000001427 coherent effect Effects 0.000 claims abstract description 17
- 108091008695 photoreceptors Proteins 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000032258 transport Effects 0.000 description 13
- -1 polyazo Polymers 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 8
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 7
- 239000000049 pigment Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
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- 239000002184 metal Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
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- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical class [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
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- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
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- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
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- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
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- 150000002148 esters Chemical class 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
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- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
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- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
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- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Discharging, Photosensitive Material Shape In Electrophotography (AREA)
- Exposure Or Original Feeding In Electrophotography (AREA)
- Fax Reproducing Arrangements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子写真感光体に可干渉性光を照射して静電
像を形成し、可視化する像形成方法において、可干渉性
光の干渉による画像の縞模様の発生を防止する像形成方
法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an image forming method in which an electrophotographic photoreceptor is irradiated with coherent light to form an electrostatic image and visualized. The present invention relates to an image forming method that prevents the occurrence of striped patterns in images.
従来の技術
電子写真プロセスは、通常、電子写真感光体の表面を帯
電した後、画像露光を施し、形成された静電像をトナー
現像し、トナー像を転写紙に転写定着して投写物を(q
るプロセスでおり、感光体は、必要に応じて除電、クリ
ーニングなどの処理が行われた後、次の接写サイクルに
移行する。Conventional technology In the electrophotographic process, the surface of an electrophotographic photoreceptor is normally charged, imagewise exposed, the formed electrostatic image is developed with toner, and the toner image is transferred and fixed onto transfer paper to form a projected object. (q
In this process, the photoreceptor is subjected to processes such as neutralization and cleaning as necessary, and then moves on to the next close-up cycle.
近年、デジタル信号を可視化するプリンターとして、レ
ーザー光を光源とした電子写真プロセスを有するレーザ
ープリンターが実用化されている。In recent years, laser printers that use an electrophotographic process using laser light as a light source have been put into practical use as printers that visualize digital signals.
この場合、画像情報によって変調されたレーザー光を感
光体に照射する像形成方法がとられるが、レーザー光は
、可干渉性であるため、感光層内部で多重反射を起こし
て、干渉を起こしやすい。In this case, an image forming method is used in which the photoreceptor is irradiated with a laser beam modulated by image information, but since the laser beam is coherent, multiple reflections occur inside the photosensitive layer, which tends to cause interference. .
一方、電子写真感光体については、無機光導電体を使用
したものと、有機光導電体を使用したものとに分けられ
るが、後者を使用したものは、無公害、高生産性、低コ
ストなどの利点があるため、多く用いられるようになっ
ている。On the other hand, electrophotographic photoreceptors can be divided into those using inorganic photoconductors and those using organic photoconductors, but those using the latter are non-polluting, high productivity, low cost, etc. It has become widely used because of its advantages.
ところが、有機光導電体のうち、光を吸収して電荷を発
生する物質は、電荷保持力に乏しく、逆に、電荷保持力
が良好で成膜性にする優れた物質は、一般に光導電性が
低いという欠点がある。However, among organic photoconductors, substances that absorb light and generate electric charge have poor charge retention ability, and conversely, materials that have good charge retention ability and are excellent in film forming properties generally have poor photoconductivity. It has the disadvantage of being low.
この問題を解決するために、感光層を、光を吸収して電
荷を発生する電荷発生層と、その電荷を輸送する電荷輸
送層とに機能分離した積層型にすることが(jわれてい
る。しかしながら、この様な積層型の感光図の場合には
、可干渉性の光を用いると、干渉を起こしやすいという
問題がある。In order to solve this problem, it is necessary to make the photosensitive layer a laminated type in which the functions are separated into a charge generation layer that absorbs light and generates charges, and a charge transport layer that transports the charges. However, in the case of such a laminated photosensitive diagram, there is a problem that interference is likely to occur when coherent light is used.
これについて、第2図によって説明する。第2図は、基
体3上の感光層が、電荷発生層1.と電荷輸送層2とに
機能分離された積層型電子写真感光体の断面図である。This will be explained with reference to FIG. FIG. 2 shows that the photosensitive layer on the substrate 3 is a charge generating layer 1. 2 is a cross-sectional view of a laminated electrophotographic photoreceptor in which functions are separated into a charge transport layer 2 and a charge transport layer 2. FIG.
入射光の光束は、ある大きさをもって感光層に入射する
が、そのうち、92や13の成分には、21のうち、電
荷発生層表面または基体表面の反射光の成分が重畳し、
干渉が引ぎ起こされる。干渉によって光の強度はもとの
入射光に比べて、強められるか弱められる。そのため、
電荷発生層に入射する光の強度は、91′、J)2’
、Q3’ のそれぞれが異なるものとなり、画像に縞模
様を生じるようになる。なお、電荷発生層は、一般的に
膜厚は薄いので、そこで吸収されずに透過する成分もあ
るので、干渉の原因となるのである。現実には、第2図
に示す感光層のほか、層の構成により、複雑な干渉が引
き起こされる。The luminous flux of the incident light enters the photosensitive layer with a certain magnitude, but among the components 92 and 13, the component of the light reflected from the charge generation layer surface or the substrate surface among 21 is superimposed,
interference is caused. Due to interference, the intensity of light is either strengthened or weakened compared to the original incident light. Therefore,
The intensity of light incident on the charge generation layer is 91', J)2'
, Q3' are different from each other, resulting in a striped pattern in the image. Note that since the charge generation layer is generally thin, some components may pass through without being absorbed therein, causing interference. In reality, complex interference is caused by the structure of the layers in addition to the photosensitive layer shown in FIG.
このような干渉を防止するための手段として、例えば、
特開昭57−165844号公報には、基体表面に光散
乱反射層を設けることが開示されている。As a means to prevent such interference, for example,
JP-A-57-165844 discloses providing a light scattering and reflective layer on the surface of a substrate.
また、特開昭57−165845号公報には、基体表面
に光吸収層を設けることが開示されている。一方、特開
昭58−171057号公報には、基体表面を粗面化す
ることなど、各種の手段が知られている。Furthermore, Japanese Patent Laid-Open No. 57-165845 discloses providing a light absorption layer on the surface of the substrate. On the other hand, Japanese Patent Laid-Open No. 58-171057 discloses various methods such as roughening the surface of the substrate.
発明が解決しようとする課題
これら従来の技術では、光散乱反射層、または光吸収層
を設けたり、基体表面を粗面化するなど、感光体の製造
方法が複雑になり、したがってまた、電子写真感光体の
構造も複雑になるという欠点があった。Problems to be Solved by the Invention In these conventional techniques, the manufacturing method of the photoreceptor is complicated, such as by providing a light-scattering reflective layer or a light-absorbing layer or roughening the surface of the substrate. There was also a drawback that the structure of the photoreceptor was complicated.
本発明は、従来の技術における上記のような問題点を解
決することを目的とする。The present invention aims to solve the above-mentioned problems in the conventional technology.
すなわち、本発明の目的は、感光体の層構成や製造方法
が少雄でないものを用いて、画像に縞模様を生じさせる
ことがない像形成方法を提供することにある。That is, an object of the present invention is to provide an image forming method that does not cause a striped pattern on an image by using a photoreceptor having a layer structure and a manufacturing method that are not inferior.
課題を解決するだめの手段及び作用
光の干渉を防止するためには、反射光のうち、干渉に寄
与する成分を少なくさせることが効果的であるので、本
発明は、反射光を広く分散させて干渉を減少させるよう
に、感光体を像様露光するものである。In order to solve the problem and prevent the interference of the working light, it is effective to reduce the components of the reflected light that contribute to the interference. The photoreceptor is exposed imagewise to reduce interference.
゛すなわち、本発明は、基体上に感光層を有する電子写
真感光体を帯電し、次いで像様に変調された可干渉性光
を照射し、感光層の表面電位を減衰させて静電像を形成
した後、電位の低い部分を現像し、電位の高い部分を現
像しないような反転現像方式により可視像を形成する像
形成方法において、電子写真感光体における曲率半径2
0m以下の曲面部分に該可干渉性光を入射することを特
徴とする。That is, in the present invention, an electrophotographic photoreceptor having a photosensitive layer on a substrate is charged, and then imagewise modulated coherent light is irradiated to attenuate the surface potential of the photosensitive layer to form an electrostatic image. In an image forming method in which a visible image is formed by a reversal development method in which a portion of low potential is developed and a portion of high potential is not developed after formation, a radius of curvature 2 in an electrophotographic photoreceptor is used.
It is characterized in that the coherent light is incident on a curved surface portion of 0 m or less.
本発明について、図面によって説明する。第1図は、電
子写真感光体が曲面を形成する部分の模式的断面図であ
る。入射光は、ある大きざの光束Ll 、L2 、L3
をもって感光層に入射するが。The present invention will be explained with reference to the drawings. FIG. 1 is a schematic cross-sectional view of a portion where an electrophotographic photoreceptor forms a curved surface. The incident light is a luminous flux Ll, L2, L3 of a certain size.
The light is incident on the photosensitive layer.
基体3が曲面になっているので、感光層を構成する電荷
輸送層2及び電荷発生層1を透過する光Ll’ 、L2
’ 、L3’ は、基体表面で反射光となって発散する
。そのため、入射光と反射光の角度がずれるので、干渉
が起こり難くなる。すなわち、入射光L2の反射光L2
″と入射光L3は、角度がずれるので、干渉しにくくな
る。Since the base body 3 has a curved surface, light Ll', L2 that passes through the charge transport layer 2 and the charge generation layer 1 that constitute the photosensitive layer
', L3' becomes reflected light on the substrate surface and diverges. Therefore, since the angles of the incident light and reflected light are shifted, interference becomes less likely to occur. That is, reflected light L2 of incident light L2
'' and the incident light L3 are at different angles, so they are less likely to interfere with each other.
上記のように、反射光の発散は、曲面の曲率が大きいほ
ど大きくなるので、曲率が大きいほど干渉が起こり難く
なるが、干渉を全くなくすことは(゛きない。As mentioned above, the divergence of reflected light increases as the curvature of the curved surface increases, so interference becomes less likely to occur as the curvature increases, but it is impossible to completely eliminate interference.
ところで、感光層への入射光が、感光層内部で多重反射
することにより、入射光が干渉して、その光強度が変動
する場合でおっても、像露光部の表面電位の変動幅が±
20V以内でめれば、形成される静電@を反転現像する
場合には、得られるコピー画像において、干渉による画
像濃度むらが殆ど問題とならなくなることが判明した。Incidentally, even if the light incident on the photosensitive layer undergoes multiple reflections within the photosensitive layer, causing interference and the light intensity to fluctuate, the fluctuation width of the surface potential of the image-exposed area will be within ±.
It has been found that if the voltage is within 20 V, when the electrostatic charge that is formed is reversely developed, image density unevenness due to interference hardly becomes a problem in the obtained copy image.
そこで、本発明は、像露光部の表面電位の変動幅が±2
0V以内になるようにするために、感光体の像露光部の
曲率を大きくしたものであって、曲率半径が20mm以
下になると、像露光部の表面電位の変動幅が±20V以
内になるのである。したがって、本発明においては、電
子写真感光体に曲率半径が20#以下の曲面を形成する
部分を作り、その部分に可干渉性光を照射するもので必
って、それにより、反転現像によって得られるコピー画
像には、干渉による画像濃度むらが発生しなくなる。Therefore, in the present invention, the variation width of the surface potential of the image exposure part is ±2.
In order to keep the voltage within 0V, the curvature of the image-exposed area of the photoreceptor is increased.If the radius of curvature is 20 mm or less, the fluctuation width of the surface potential of the image-exposed area will be within ±20V. be. Therefore, in the present invention, a portion forming a curved surface with a radius of curvature of 20# or less is created on the electrophotographic photoreceptor, and coherent light is irradiated to that portion, thereby making it possible to obtain the desired result by reversal development. In the copied image, image density unevenness due to interference no longer occurs.
次に、本発明で使用される電子写真感光体について説明
する。Next, the electrophotographic photoreceptor used in the present invention will be explained.
電子写真感光体としては、無機光導電体を使用するもの
、有機光導電体を使用するもの、いずれのものでも使用
できるが、本発明が好適に適用できるのは、主に積層型
感光層を有する電子写真感光体である。有機光導電体を
使用した場合には、無公害、高生産性、低コストなどの
利点があるため有利である。As an electrophotographic photoreceptor, either one using an inorganic photoconductor or one using an organic photoconductor can be used, but the present invention is preferably applicable mainly to those using a laminated photoconductor. It is an electrophotographic photoreceptor with When an organic photoconductor is used, it is advantageous because it has advantages such as non-pollution, high productivity, and low cost.
積層型感光層を構成する電荷発生層は、三方晶型セレン
、非晶質セレン、5e−Te合金、5e−AS合金、七
ノアゾまたはポリアゾ顔料、多環キノン顔料、ペリレン
顔料、インジゴ顔料、ビスベンゾイミダゾール顔料、フ
タロシアニン顔料、キプクリドン顔料、ビリリウム化合
物、スクェアリウム化合物、シアニン化合物、キノシア
ニン化合物、トリメチン化合物、アズレニウム化合物等
の電荷発生物質を、必要に応じてポリエステル、ポリス
チレン、セルロース脂肪酸エステル、ボ1ノ(メタ)ア
クリル醗エステル樹脂、ポリビニルブチラール、塩化ビ
ニル−酢酸ビニル共重合体等の結石樹脂の溶液に分散さ
せ、塗布することによって形成されたものである。電荷
発生層の膜厚は、0.05〜5μmの範囲にあるのが好
ましい。The charge generation layer constituting the laminated photosensitive layer includes trigonal selenium, amorphous selenium, 5e-Te alloy, 5e-AS alloy, heptanoazo or polyazo pigment, polycyclic quinone pigment, perylene pigment, indigo pigment, bis Charge-generating substances such as benzimidazole pigments, phthalocyanine pigments, cypcridone pigments, biryllium compounds, squalium compounds, cyanine compounds, quinocyanine compounds, trimethine compounds, and azulenium compounds may be added to polyester, polystyrene, cellulose fatty acid ester, boron, etc. as necessary. It is formed by dispersing it in a solution of calculus resin such as (meth)acrylic ester resin, polyvinyl butyral, vinyl chloride-vinyl acetate copolymer, etc., and applying it. The thickness of the charge generation layer is preferably in the range of 0.05 to 5 μm.
半導体レーザー光を使用する電子写真感光体の場合には
、電荷発生物質として、フタロシアニンまたはスクェア
リウム化合物が好ましい。In the case of an electrophotographic photoreceptor that uses semiconductor laser light, phthalocyanine or a squareium compound is preferable as the charge generating substance.
フタロシアニンとしては、光導電体素子であるフタロシ
アニンで市ればよく、無金属フタロシアニンまたは金属
フタロシアニン、或いはこれらの混合物である。金属フ
タロシアニンの金属としては、銅、銀、ベリリウム、マ
グネシウム、カルシウム、亜鉛、カドミウム、バリウム
、水銀、アルミニウム、ガリウム、インジウム、ランタ
ン、ネオジウム、(ノマリウム、ユーロピウム、ガドリ
ニウム、ジスプロシウム、ホルミウム、ナトリウム、リ
チウム、イッテルビウム、ルテチウム、チタン、錫、八
ツニウム、鉛、トリウム、バナジウム、アンチモン、ク
ロム、モリブデン、ウラン1.マンガン、鉄、コバルト
、ニッケル、ロジウム、パラジウム、オスミウム及び白
金等があげられる。また、フタロシアニン核の中心には
、金属原子ではなく、3価以上の原子価を有するハロゲ
ン化金属または駿化金属が存在していてもよい。また、
フタロシアニンとしては、種々の結晶系を有するものが
知られているが、例えば、α型、β型、γ型、δ型、ε
型、X型等の結晶系のものが使用される。The phthalocyanine may be a phthalocyanine which is a photoconductor element, and may be a metal-free phthalocyanine, a metal phthalocyanine, or a mixture thereof. Metal phthalocyanines include copper, silver, beryllium, magnesium, calcium, zinc, cadmium, barium, mercury, aluminum, gallium, indium, lanthanum, neodymium, (nomarium, europium, gadolinium, dysprosium, holmium, sodium, lithium, Ytterbium, lutetium, titanium, tin, octunium, lead, thorium, vanadium, antimony, chromium, molybdenum, uranium 1. Manganese, iron, cobalt, nickel, rhodium, palladium, osmium, platinum, etc. Also, phthalocyanine Instead of a metal atom, a metal halide or a metal hydride having a valence of 3 or more may be present at the center.
Phthalocyanines are known to have various crystal systems, such as α-type, β-type, γ-type, δ-type, ε-type.
Crystal systems such as type and X type are used.
スクェアリウム化合物としては、特開昭59−1257
35号、同60−128452〜5号、同60−131
538号公報等に記載のものがあげられる。As a squalium compound, JP-A-59-1257
No. 35, No. 60-128452-5, No. 60-131
Examples include those described in Publication No. 538 and the like.
電荷輸送層は、芳香族第3級アミン化合物、ごドラシン
化合物、ピラゾリン化合物、オキサゾール化合物、オキ
サジアゾール化合物、スチルベン誘導体、カルバゾール
化合物等の電荷輸送物質を、必要に応じて、ポリカーボ
ネート、ボリアリレート、ポリエステル、ポリスチレン
、スチレン−7クリロニトリル共重合体、ポリサルホン
、ポリメタクリル酸エステル類、スチレン−メタクリル
酸エステル共重合体等の成膜性樹脂と共に、両者を溶解
可能な溶剤に溶かして塗布し、形成される。The charge transport layer contains a charge transport substance such as an aromatic tertiary amine compound, a godracine compound, a pyrazoline compound, an oxazole compound, an oxadiazole compound, a stilbene derivative, or a carbazole compound, and if necessary, a charge transport substance such as polycarbonate, polyarylate, Formed by dissolving them together with a film-forming resin such as polyester, polystyrene, styrene-7-crylonitrile copolymer, polysulfone, polymethacrylic acid esters, and styrene-methacrylic acid ester copolymer in a solvent that can dissolve them. be done.
電荷輸送層の膜厚は、5〜50仮程度である。The thickness of the charge transport layer is approximately 5 to 50 mm.
基体としては、導電性支持体、例えば、アルミニウム、
銅、鉄、亜鉛、ニッケル等の金、睨のドラム、及びシー
ト、紙、プラスチック又はガラス上にアルミニウム、銅
、金、銀、白金、パラジウム、チタン、ニッケルークロ
ム、ステンレス鋼、銅−インジウム等の金属を蒸着する
か、酸化インジウム、酸化錫等の導電性金属化合物を黒
石するか、金属箔をラミネートするか、又はカーボンブ
ラック、酸化インジウム、酸化錫−散化アンチモン粉、
金属粉等を結着樹脂に分散し、塗布することによって導
電処理したドラム状、シート状、プレート状のものなど
、公知の材料を用いることができる。As a substrate, an electrically conductive support such as aluminum,
Copper, iron, zinc, nickel, etc. gold, glazed drums, and aluminum, copper, gold, silver, platinum, palladium, titanium, nickel-chromium, stainless steel, copper-indium, etc. on sheet, paper, plastic or glass. or deposit a conductive metal compound such as indium oxide or tin oxide, or laminate a metal foil, or deposit carbon black, indium oxide, tin oxide-dispersed antimony powder,
Known materials such as drum-shaped, sheet-shaped, or plate-shaped materials can be used, which are conductive-treated by dispersing metal powder or the like in a binder resin and applying the coating.
基体上には障壁層を設けてもよい。障壁層は、基体から
の不必要な電荷の注入を阻止するためにイj効でめり、
感光層の帯電性を高めたり、画質を向上させる作用があ
る。更に、感光層と基体との接着性を向上させる作用も
ある。障壁層を構成する材料としては、ポリビニルアル
コール、ポリビニルピロリドン、ポリビニルごリジン、
セルロースニーデル類、セルロースエステル類、ポリア
ミド、ポリウレタン、力ぜイン、ピラチン、ポリグルタ
ミン酸、澱(分、スターブ−アセテ−1〜、アミノF2
粉、ポリアクリル酸、ポリアクリルアミド等があげられ
る。これらの材料の抵抗率は105〜1014Ω・cm
程度が好ましい。障壁図の膜厚は0.05〜2μm程度
に設定する。A barrier layer may be provided on the substrate. The barrier layer is designed to prevent unnecessary charge injection from the substrate.
It has the effect of increasing the chargeability of the photosensitive layer and improving image quality. Furthermore, it also has the effect of improving the adhesion between the photosensitive layer and the substrate. Materials constituting the barrier layer include polyvinyl alcohol, polyvinylpyrrolidone, polyvinyl lysine,
Cellulose needles, cellulose esters, polyamide, polyurethane, glutinous acid, pyratine, polyglutamic acid, lees (min., starved acetate-1~, amino F2)
Examples include powder, polyacrylic acid, polyacrylamide, etc. The resistivity of these materials is 105-1014 Ωcm
degree is preferred. The film thickness of the barrier diagram is set to about 0.05 to 2 μm.
本発明の電子写真感光体において、可干渉付光を入射す
る部分の曲率半径を20#以下にするには、電子写真感
光体が、円筒体の場合には、その外径を40#以下のも
のにすればよい。また、電子写真感光体がベルト体でお
る場合には、その曲率半径が20s以下の曲面を形成す
るように屈曲さければよい。In the electrophotographic photoreceptor of the present invention, in order to make the radius of curvature of the portion into which the coherent light is incident not more than 20#, if the electrophotographic photoreceptor is a cylindrical body, the outer diameter should be set to 40# or less. Just make it into something. Further, when the electrophotographic photoreceptor is a belt, it is sufficient to bend the belt so as to form a curved surface with a radius of curvature of 20 seconds or less.
第3図は、電子写真感光体がベル1〜体である場合の要
部の断面図を示す。ベルト状感光体4は、帯電器6で帯
電され、ローラー5により屈曲させられる。この1m曲
部の曲面部分に、可干渉光7を照射するように構成する
。ローラー5の半径は、小さいはど好まり、い。電子写
真感光体がベルト体である場合は、ローラーにより曲率
半径を相当小さくすることが可能であるので、ベルト体
の方か円筒体の場合よりも有利であることがある。FIG. 3 shows a sectional view of essential parts when the electrophotographic photoreceptor is a bell body. The belt-shaped photoreceptor 4 is charged by a charger 6 and bent by a roller 5. The structure is such that the coherent light 7 is irradiated onto the curved surface portion of this 1 m curved section. The radius of the roller 5 is preferably small. When the electrophotographic photoreceptor is a belt, the radius of curvature can be made considerably smaller by using rollers, so a belt may be more advantageous than a cylindrical body.
なあ、干渉による表面電位の変動幅は、できる限り小さ
い方が好ましいが、電位の変動幅を小さくするには、1
)感光層(電荷発生層)の光吸収量を増やし、反射光を
減らすこと、2)感光層の感度を高め光減衰を早めるこ
とにより、低電位の飽和領I戎で使用すること、3)感
光層の光減衰曲線を改良し、低電位の飽flO領域の感
度を平坦にすること、等があげられる。本発明の像形成
方法は、上記のような電位の変動幅を小さくする為の手
段と併用すると、より好都合である。例えば、第4図に
示ず電子写真感光体の光減衰曲線において、Cで示され
る部分のように表面電位の平坦部を利用すれば、入射光
が干渉して強弱を生じても表面電位の変動は小さくなる
。By the way, it is preferable that the fluctuation width of the surface potential due to interference be as small as possible, but in order to reduce the fluctuation width of the potential, 1
) Increase the amount of light absorbed by the photosensitive layer (charge generation layer) and reduce reflected light; 2) Increase the sensitivity of the photosensitive layer and accelerate light attenuation to enable use in the low potential saturation region; 3) Examples include improving the optical attenuation curve of the photosensitive layer and flattening the sensitivity of the low potential saturated flO region. The image forming method of the present invention is more advantageous when used in combination with a means for reducing the potential fluctuation range as described above. For example, if you use a flat part of the surface potential like the part C in the light attenuation curve of an electrophotographic photoreceptor (not shown in FIG. Fluctuations will be smaller.
実施例
実施例1
基体として、40#φX260sφのアルミニウムバイ
ブを使用した。これに、共重合ナイロン樹脂(商品名:
CH3000、東し製)のメタノール/ブタノール溶
液を、リング塗布機により塗布して、付属0.7跪の障
壁層を形成した。Examples Example 1 An aluminum vibrator of 40 #φ x 260 sφ was used as the base. To this, copolymerized nylon resin (product name:
A methanol/butanol solution of CH3000 (manufactured by Toshi) was applied using a ring coater to form an attached 0.7-layer barrier layer.
次いで、3部のバナジルフタロシアニンをポリエステル
樹脂(商品名: PE100 、グツドイヤー・ケミカ
ル社製〉の10%シクロへキザノン溶液70部に分散し
た。分散操作は、8#φポールを用いて、混合物をボー
ルミルにて4時間混合lることにより行った。これに2
−ブタノン10部を加えて塗布液とし、上記障壁層上に
リング塗布機で塗布し、膜雫0.4μmの電荷発生層を
形成した。Next, 3 parts of vanadyl phthalocyanine was dispersed in 70 parts of a 10% cyclohexanone solution of a polyester resin (trade name: PE100, manufactured by Gutdeyer Chemical Co.).The dispersion operation was performed by ball milling the mixture using an 8#φ pole. This was done by mixing for 4 hours at a
- 10 parts of butanone was added to prepare a coating solution, which was coated onto the barrier layer using a ring coater to form a charge generation layer with a film droplet thickness of 0.4 μm.
形成された電荷発生層の上に、電荷輸送層を形成し・た
。すなわち、N、N’ −シフIニル−N。A charge transport layer was formed on the formed charge generation layer. That is, N,N'-Sifinyl-N.
N′−ビス(3−メチルフェニル)−[1,1’−ビフ
ェニル]−4,4’ −ジアミン4部を電荷輸送材料と
し、ポリカーボネートZ樹脂6部と共にモノクロロベン
ゼン40部に溶解させ、得られた溶液を浸漬塗布装置に
よって110m/分の引上げ速度で塗布した。110℃
で1時間乾燥して、膜厚20期の電荷輸送層を形成し、
電子写真感光体を得た。4 parts of N'-bis(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine was used as a charge transport material, and dissolved in 40 parts of monochlorobenzene together with 6 parts of polycarbonate Z resin. The solution was applied using a dip coating device at a pulling speed of 110 m/min. 110℃
was dried for 1 hour to form a charge transport layer with a thickness of 20,
An electrophotographic photoreceptor was obtained.
この電子写真感光体を一500Vとなるように帯電させ
、次いで、像様露光、負帯電現像剤による反転現像、転
写、ゴムア1ノードによるクリーニングなどの電子写真
プロセスを有するプリンターによって評価した。This electrophotographic photoreceptor was charged to -500 V, and then evaluated using a printer having electrophotographic processes such as imagewise exposure, reversal development with a negatively charged developer, transfer, and cleaning with a rubber electrode.
まず、露光光源として、非干渉性光源を使用して、表面
電位の光減衰曲線を求めた。その結果を第4図に、曲線
Aとして示す。なお、第4図中、縦軸は表面電位を示し
、横軸は光り強度を示す。First, a light attenuation curve of surface potential was determined using an incoherent light source as an exposure light source. The results are shown as curve A in FIG. In FIG. 4, the vertical axis represents the surface potential, and the horizontal axis represents the light intensity.
次に、露光光源として、波長785nm 、感光体表面
での強度7ergs/7の半導体レーザーを用い、イメ
ージライトスキャンによって像様露光した。この場合の
尤照射部の電位を測定したところ、−85〜−120v
の変動があった。形成された静電像を反転現像して、コ
ピー画像を得たところ、縞模様は殆ど見られなかった。Next, imagewise exposure was performed by image light scanning using a semiconductor laser having a wavelength of 785 nm and an intensity of 7 ergs/7 on the surface of the photoreceptor as an exposure light source. When we measured the potential of the irradiated part in this case, it was -85 to -120v.
There was a change in When the formed electrostatic image was reversely developed to obtain a copy image, almost no striped pattern was observed.
比較例1
基体として、60.φx260gφのアルミニウムバイ
ブを使用して、実施例1に8&プると同様の感光層を形
成し・、電子写真感光体を作製した。この電子゛す真感
光体を、実施例1におけると同様の電子写真プロセスを
有するプリンターによって計1山した。実施例1におけ
ると同様のレーザー光によって光照射し、電位を測定し
たところ、−80〜−125Vの変動がめった。形成さ
れた静電像を現像して、コピー画像を作成したところ、
黒地部に縞模様が生じており、実施例1におけるよりも
劣る画質のものでめった。Comparative Example 1 As a substrate, 60. Using an aluminum vibrator of φx260 gφ, a photosensitive layer similar to that of Example 1 was formed by 8&p; to produce an electrophotographic photoreceptor. A total of one stack of this electrophotoreceptor was prepared using a printer having the same electrophotographic process as in Example 1. When light was irradiated with the same laser beam as in Example 1 and the potential was measured, a fluctuation of -80 to -125V was observed. When the formed electrostatic image was developed and a copy image was created,
A striped pattern appeared in the black background area, and the image quality was inferior to that in Example 1.
実施例2
N荷発生層の膜厚を0.3m、電荷輸送層の膜厚を23
尤にした以外は、実施例1におけると同様にして電子写
真感光体を作製し、まず、光減衰曲線を測定した。その
結果を第4図に曲線Bとして示O
次に、感光体表面での強度10erQS/C屑の半導体
レーザー光を照射して、電位を測定したところ、−85
〜−120Vの変動があった。形成された静電像を反転
現像して、コピー画像を得たところ、縞模様は殆ど見ら
れなかった。Example 2 The thickness of the N charge generation layer was 0.3 m, and the thickness of the charge transport layer was 23 m.
An electrophotographic photoreceptor was produced in the same manner as in Example 1, except that the light attenuation curve was measured. The results are shown in Figure 4 as curve B.Next, when the photoreceptor surface was irradiated with a semiconductor laser beam of intensity 10erQS/C chips and the potential was measured, it was found that -85
There was a fluctuation of ~-120V. When the formed electrostatic image was reversely developed to obtain a copy image, almost no striped pattern was observed.
実施例3
基体として、30mφX260sφのアルミニウムパイ
プを使用して、実施例1におけると同様の感光層を形成
し、電子写真感光体を作製した。この電子写真感光体を
、実施例1におけると同様の電子写真プロセスを有する
プリンターによって評価した。感光体表面での強度8
ergs、” Cmの半導体レーザー光を照射1ノで、
電位を測定したところ、−120〜−150Vの変動が
あった。形成された静電像を現像して、]ビー画像を作
成したところ、縞模様は殆ど見られなかった。Example 3 Using an aluminum pipe of 30 mφ x 260 sφ as a substrate, a photosensitive layer similar to that in Example 1 was formed to produce an electrophotographic photoreceptor. This electrophotographic photoreceptor was evaluated using a printer having the same electrophotographic process as in Example 1. Strength on photoreceptor surface 8
ergs,” Irradiate with a semiconductor laser beam of “Cm” at 1 no.
When the potential was measured, there was a fluctuation of -120 to -150V. When the formed electrostatic image was developed to create a bee image, almost no striped pattern was observed.
発明の効果
本発明は、Nチ写真感光体における曲率半径20m以下
の曲面部分に可干渉性光を入射するから、可干渉性光を
使用して静N像を形成し、反転現像によつ−C可視像を
(qる場合、画像に干渉による縞模様が発生することが
ない。したがって、優れた画質の]ビー画像を得ること
ができる。Effects of the Invention In the present invention, since coherent light is incident on a curved surface portion with a radius of curvature of 20 m or less on an N-chi photoreceptor, a static N image is formed using the coherent light, and a static N image is formed by reversal development. - When the visible image is converted to (q), a fringe pattern due to interference does not occur in the image. Therefore, a bee image of excellent image quality can be obtained.
第1図及び第2図は、干渉による縞模様の発生機構を説
明するための説明図、第3図は電子写真感光体がベル1
〜体でおる場合における本発明を説明づるための要部の
断面図、第4図は本発明において使用する電子写真感光
体の光減衰曲線を示すグラフでおる。
1・・・電荷発生層、2・・・N荷輸送層、3・・・基
体、4・・・ペル1〜私感光体、5・・・ローラー、6
・・・帯電器、7・・・可干渉光。
特許出願人 富士ゼロックス株式会社代理人
弁理士 渡部 剛
l+1L2L3
光強1f(arp /〜)
第4図1 and 2 are explanatory diagrams for explaining the generation mechanism of striped patterns due to interference, and FIG. 3 shows that the electrophotographic photoreceptor is
FIG. 4 is a sectional view of the main parts for explaining the present invention in the case where the electrophotographic photoreceptor is used in the present invention. DESCRIPTION OF SYMBOLS 1... Charge generation layer, 2... N charge transporting layer, 3... Substrate, 4... Pel 1-I photoreceptor, 5... Roller, 6
...Charger, 7...Coherent light. Patent applicant Fuji Xerox Co., Ltd. Agent
Patent attorney Tsuyoshi Watanabe l+1L2L3 Mitsuru 1f (arp/~) Figure 4
Claims (3)
、次いで像様に変調された可干渉性光を照射し、感光層
の表面電位を減衰させて静電像を形成した後、電位の低
い部分を現像し、電位の高い部分を現像しないような反
転現像方式により可視像を形成する像形成方法において
、電子写真感光体における曲率半径20mm以下の曲面
部分に該可干渉性光を入射することを特徴とする像形成
方法。(1) After charging an electrophotographic photoreceptor having a photosensitive layer on a substrate, and then irradiating imagewise modulated coherent light to attenuate the surface potential of the photosensitive layer to form an electrostatic image, In an image forming method in which a visible image is formed by a reversal development method in which areas with a low potential are developed and areas with a high potential are not developed, the coherent light is applied to a curved surface area of an electrophotographic photoreceptor with a radius of curvature of 20 mm or less. An image forming method characterized in that:
ある請求項(1)記載の像形成方法。(2) The image forming method according to claim (1), wherein the electrophotographic photoreceptor is a cylindrical body having an outer diameter of 40 mm or less.
mm以下の曲面部分を形成させ、該曲面部分に可干渉性
光を照射する請求項(1)記載の像形成方法。(3) The electrophotographic photoreceptor is a belt body, and the radius of curvature is 20
The image forming method according to claim 1, wherein a curved surface portion having a diameter of mm or less is formed, and the curved surface portion is irradiated with coherent light.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63110494A JP2712277B2 (en) | 1988-05-09 | 1988-05-09 | Image forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63110494A JP2712277B2 (en) | 1988-05-09 | 1988-05-09 | Image forming method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01281475A true JPH01281475A (en) | 1989-11-13 |
JP2712277B2 JP2712277B2 (en) | 1998-02-10 |
Family
ID=14537176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63110494A Expired - Fee Related JP2712277B2 (en) | 1988-05-09 | 1988-05-09 | Image forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2712277B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5310612A (en) * | 1991-03-11 | 1994-05-10 | Fuji Xerox Co., Ltd. | Image-holding member and production method thereof, method for forming image-forming master using the image-holding member and the forming apparatus, and image-forming method using them |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62173759A (en) * | 1986-01-27 | 1987-07-30 | Hitachi Ltd | Thyristor |
JPS62299980A (en) * | 1986-06-20 | 1987-12-26 | Canon Inc | Light beam scanning type recording device |
JPS63121851A (en) * | 1986-11-11 | 1988-05-25 | Canon Inc | Electrophotographic photoreceptive member |
-
1988
- 1988-05-09 JP JP63110494A patent/JP2712277B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62173759A (en) * | 1986-01-27 | 1987-07-30 | Hitachi Ltd | Thyristor |
JPS62299980A (en) * | 1986-06-20 | 1987-12-26 | Canon Inc | Light beam scanning type recording device |
JPS63121851A (en) * | 1986-11-11 | 1988-05-25 | Canon Inc | Electrophotographic photoreceptive member |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5310612A (en) * | 1991-03-11 | 1994-05-10 | Fuji Xerox Co., Ltd. | Image-holding member and production method thereof, method for forming image-forming master using the image-holding member and the forming apparatus, and image-forming method using them |
US5411826A (en) * | 1991-03-11 | 1995-05-02 | Fuji Xerox Co., Ltd. | Image-holding member and production method thereof, method for forming image-forming master using the image-holding member and the forming apparatus, and image-forming method using them |
US5464716A (en) * | 1991-03-11 | 1995-11-07 | Fuji Xerox Co., Ltd. | Image-holding member and production method thereof, method for forming image-forming master using the image-holding member and the forming apparatus, and image-forming method using them |
Also Published As
Publication number | Publication date |
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JP2712277B2 (en) | 1998-02-10 |
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