JPH01276634A - Semiconductor manufacturing apparatus - Google Patents

Abstract

PURPOSE:To prevent an influence of a magnetic field on the outside without damaging characteristics of a heater by a method wherein the heater is composed of two heater wires that have been wound in parallel and each in a coil shape and electric currents flowing through the two heater wires are controlled in such a way that they flow in directions opposite to each other and equally. CONSTITUTION:A heater 11 is constituted of two heater wires 12, 13 that have been wound in parallel and in a coil shape. Electric currents are supplied to the heater 11; the electric currents flowing through the two heater wires 12, 13 are controlled in such a way that they flow in directions opposite to each other and equally. Accordingly, magnetic fields that are generated by the equal electric currents flowing through the two parallel heater wires are cancelled mutually so as to prevent the magnetic fields from being generated. By this setup, it is possible to prevent an influence of the magnetic fields on the outside.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to semiconductor manufacturing equipment such as diffusion furnaces and low pressure CVD equipment.

BACKGROUND OF THE INVENTION With recent advances in semiconductor manufacturing technology, wafers have been rapidly progressing toward larger diameters, and manufacturing equipment for wafers with a diameter of 8 to 10 inches is now being put into practical use. Also,
Advanced control technology for manufacturing bags and storage is required, and currently many devices are controlled by computers.

FIG. 2 is a sectional view of a conventional diffusion furnace, and FIG. 3 shows a typical usage example.

In Fig. 2, 1 is a heat insulating part, 2 is a heater wrapped in a cylindrical shape along the inner surface of this heat insulating part and fixed, and a reaction tube installed to penetrate the space formed by the 3Vi heater 2. be. 2a and 2b are electrodes at both ends of the heater 2. The diffusion furnace thus formed is generally stacked in several stages as shown in FIG. 3, and is used with a computer-based control device 4 placed nearby.

5 is a display device of the control device 4, and a CRT display is used. Reference numeral 6 denotes an external storage device for the control device 4, and from the viewpoint of storage capacity, etc., it is a magnetic disk device, a magnetic
Tape devices, etc. are used.

In the above configuration, the control device 4 controls the electrodes 2 at both ends.
Electric current is passed from a and 2b to the heater 2 and the reaction tube 3
The temperature inside is controlled to maintain a predetermined temperature. That is, the amount of heat generated by the B heater 2 is controlled by increasing or decreasing the current flowing through the heater 2, and the temperature inside the reaction tube 3 is kept constant. The reaction tube 3 maintained at a constant temperature in this way
Insert the wafer into a predetermined position inside the external storage device 6.
Temperature 1 hour according to pre-stored processing conditions.

Diffusion processing of the wafer is carried out by controlling gas and the like. That is, the control device 4 converts the processing conditions stored in the external storage device 6 as magnetic signals into electrical signals, reads them, and controls the increase/decrease of the current of the heater 2 in accordance with the electrical signals.

Further, at this time, the display device 6 displays conditions such as temperature and gas, and the status of the diffusion furnace at that time.

Problems to be Solved by the Invention However, in the conventional configuration as described above, there was a problem in that the display device 5 and external storage device 6 of the control device 4 malfunctioned due to the strong magnetic field generated from the heater 2. That is, since the heater 2 is wound into a cylindrical shape, it operates as a coil and generates a strong magnetic field by the supplied current. This magnetic field reaches the outside of the diffusion furnace, and a heater 2 is used to control the temperature.
When the current supplied to the external storage device 6 changes, the strength of the magnetic field changes accordingly, and if the display device 5 is within its reach, image distortion and shaking may occur.
If this occurs, problems such as magnetic signal reversal may occur. Furthermore, as the diameter of wafers has become larger in recent years, the diameter of the heater has become larger, and the magnetic field often generated by the increase in the voltage applied to the heater 2 and the increase in the supplied current due to the increase in heat capacity has become stronger. However, the reach of the magnetic field to the outside has become vast, and the problems caused by this are becoming more and more noticeable.

The present invention is intended to solve such problems, and aims to provide a semiconductor manufacturing apparatus that prevents the influence of external magnetic fields without impairing the characteristics of the heater.

Means for Solving the Problem In order to solve this problem, the present invention provides a heater consisting of two heater wires wound in parallel in a coil shape;
A power supply unit that supplies current to the heater, a control unit that controls currents flowing through the two heater wires to be equal and opposite to each other, and a reaction tube that penetrates inside the heater. It is.

Effect: With this configuration, the magnetic fields generated by equal currents flowing through two parallel heater wires cancel each other out, thereby preventing the generation of a magnetic field and preventing the influence of the magnetic field on the outside.

EXAMPLE Hereinafter, an example of the present invention will be described based on the drawings.

In FIG. 1, reference numeral 11 denotes a heater formed by winding two mutually parallel heater wires 12 and 13 into a coil shape, and is fixed along the inner surface of a cylindrical heat insulating material 14. . Reference numeral 15 denotes a reaction tube 12a that is provided to penetrate the space formed by the heater 11.

12b, 13a, and 13b are electrodes at both ends of each of the heater wires 12 and 13. 16 is a power supply unit, which connects electrodes 12a, 12b and 13a through a power line 17;
Electric power is supplied to each heater wire 12 and 13 from 13b. 18 is a control device.

To explain the operation of the semiconductor manufacturing apparatus configured as above, first, the control device 18 runs from the stain source section 16 to the power line 17 and the electrodes 12a, 12b, 13a.
, 13b through two heaters AI 12 , 13
A current is passed through the reaction tube 15 to maintain the inside of the reaction tube 15 at a predetermined temperature. At this time, the currents flowing through the heater wires 12 and 13K are controlled so that they are in opposite directions and have equal current values.

That is, for example, when a current is passed from the electric FM 12a to the electric f@12b, the same current is passed from the electric FM 13b to the electric F@12b.
Control is performed so that the data is sent to the IM 13a. When a current is passed through the coiled heater 11 in this way, a magnetic field is generated in proportion to the current value, but the two heater wires 12 and 13 are always fixed in a coiled state in a parallel state. Since the currents flowing therein are in opposite directions, the magnetic fields generated from the heater wires 12 and 13 are in opposite directions and cancel each other out. Furthermore, since the values of the currents flowing through the two heater wires 12 and 13 are always controlled to be equal, the generated magnetic fields eventually cancel each other out completely, and no influence of the magnetic field on the outside occurs at all.

Although the present embodiment has been described using a DC power source, an AC power source may also be used as long as it satisfies the condition that the current values supplied to the two heater wires 12, 13 are always equal. In addition, if there is only one power supply system, the electric currents 12b and 13a and 12a and 13b are connected directly in FIG. Needless to say, the same effects as in this embodiment can be obtained.

Effects of the Invention As described above, according to the present invention, there is a heater consisting of two heater wires wound in parallel in a coil shape, and a Y! The magnetic field generated by the two coiled heater wires is This makes it possible to realize an excellent semiconductor manufacturing apparatus that can always cancel each other out and completely prevent the influence of magnetic fields on the outside.

[Brief explanation of the drawing]

FIG. 1 is a cutaway perspective view of a main part of a semiconductor manufacturing device according to an embodiment of the present invention, FIG. 2 is a cutaway perspective view of a main part of a conventional semiconductor manufacturing device, and FIG. 3 is a perspective view showing a typical usage example. It is. 11... Heater % 12a, 12b... Heater wire, 15... Reaction tube, 16... Power supply section, 18...
...Control unit.

Claims (1)

[Claims] 1. A heater consisting of two parallel heater wires wound in a coil, a power supply unit that supplies current to this heater, and currents flowing through the two heater wires in opposite directions and equal to each other. What is claimed is: 1. A semiconductor manufacturing apparatus comprising: a control section for controlling the heater; and a reaction tube that penetrates the inside of the heater.