JPH01273337A - Package for accommodating semiconductor element - Google Patents
Package for accommodating semiconductor elementInfo
- Publication number
- JPH01273337A JPH01273337A JP10205088A JP10205088A JPH01273337A JP H01273337 A JPH01273337 A JP H01273337A JP 10205088 A JP10205088 A JP 10205088A JP 10205088 A JP10205088 A JP 10205088A JP H01273337 A JPH01273337 A JP H01273337A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- package
- external lead
- glass
- lead terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000011521 glass Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101100348017 Drosophila melanogaster Nazo gene Proteins 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体素子を収容する半導体素子収納用パッケ
ージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement in a semiconductor element housing package that houses a semiconductor element.
（従来技術及びその課題）
従来、半導体素子を収容するためのパッケージ、特にガ
ラスの溶着によって封止するガラス封止形の半導体素子
収納用パッケージは、絶縁基体と蓋体とから成り、内部
に半導体素子を収容する空所を有する絶縁容器と、該容
器内に収容される半導体素子を外部電気回路に電気的に
接続するための外部リード端子とから構成されており、
絶縁基体及び蓋体の相対向する主面に予め封止用のガラ
ス層を被着形成するとともに絶縁基体主面に外部リード
端子を固定し、半導体素子の各電極と外部リード端子と
をワイヤボンドした後、それぞれのガラス層を溶融一体
化させることによって内部に半導体素子を気密に封止し
ている。(Prior art and its problems) Conventionally, a package for accommodating a semiconductor element, especially a glass-sealed package for accommodating a semiconductor element sealed by glass welding, consists of an insulating base and a lid, and a semiconductor element is housed inside. It is composed of an insulating container having a cavity for accommodating the device, and an external lead terminal for electrically connecting the semiconductor device accommodated in the container to an external electric circuit,
A glass layer for sealing is formed in advance on the opposing main surfaces of the insulating base and the lid, and an external lead terminal is fixed on the main surface of the insulating base, and each electrode of the semiconductor element and the external lead terminal are wire bonded. After that, the respective glass layers are melted and integrated, thereby airtightly sealing the semiconductor element inside.
しかし乍ら、近時、半導体素子の駆動が高速となり、該
高速駆動する半導体素子を前記半導体素子収納用パッケ
ージに収容した場合、外部リード端子を伝わる信号の伝
播速度が遅く、半導体素子の高速駆動に対応しないとい
う問題を発生した。However, recently, the speed of driving semiconductor elements has increased, and when a semiconductor element driven at high speed is housed in the semiconductor element storage package, the propagation speed of the signal transmitted through the external lead terminal is slow, and the high speed driving of the semiconductor element The problem occurred that it was not compatible.
そこで上記問題点に鑑み外部リード端子及び該外部リー
ド端子を取着固定するガラスについてその材質を種々変
更し、外部リード端子を伝わる信号の伝播速度を調べた
結果、外部リード端子を伝わる信号の伝播速度は下記式
（１）に示す如く外部リード端子を取着固定する物質の
誘電率に太き（左右され、誘電率が高ければ高い程伝播
速度が遅くなることが判った。Therefore, in view of the above problems, we changed the material of the external lead terminal and the glass to which the external lead terminal is attached and fixed, and investigated the propagation speed of the signal transmitted through the external lead terminal. It has been found that the speed depends on the dielectric constant of the material to which the external lead terminal is attached and fixed, as shown in equation (1) below, and the higher the dielectric constant, the slower the propagation speed.
Ｔ□ ＝（１／Ｃ，） ε、し ・・（１）Ｔ７：信
号の伝播遅延
Ｃ０：光の速度
εＦ：外部リード端子を固定する物質
の比誘電率
Ｌ ：外部リード端子の長さ
従って、従来の半導体素子収納用パッケージは絶縁容器
を気密に封止し、外部リード端子を容器に取着固定する
ガラスが通常、酸化鉛−ホウ酸系ガラスから成っており
、該酸化鉛−ホウ酸系ガラスはその誘電率が１２．０〜
３５．０と高いことから外部リード端子を伝わる信号の
伝播速度が極めて遅いものとなり、近時の高速駆動を行
う半導体素子はその収容が不可となってしまうことを知
見した。T□ = (1/C,) ε, (1) T7: Signal propagation delay C0: Speed of light εF: Relative dielectric constant L of the material that fixes the external lead terminal: Length of the external lead terminal In conventional packages for storing semiconductor devices, the insulating container is hermetically sealed, and the glass for attaching and fixing the external lead terminals to the container is usually made of lead oxide-boric acid glass. The dielectric constant of glass is 12.0~
It has been found that since the value is as high as 35.0, the propagation speed of the signal transmitted through the external lead terminal becomes extremely slow, making it impossible to accommodate modern semiconductor devices that are driven at high speed.
（発明の目的）
本発明は上記知見に基づき案出されたもので、その目的
は駆動の高速化が進む半導体素子を確実に収容すること
ができる安価な半導体素子収納用パッケージを提供する
ことにある。(Object of the Invention) The present invention was devised based on the above knowledge, and its purpose is to provide an inexpensive package for storing semiconductor elements that can reliably accommodate semiconductor elements whose driving speeds are increasing. be.
（課題を解決するための手段）
本発明は絶縁基体と蓋体とから成り、内部に半導体素子
を収容するための空所を有する容器と、該容器内に収容
される半導体素子を外部電気回路に接続するための外部
リード端子とから成る半導体素子収納用パッケージにお
いて、前記外部リード端子の一端が前記絶縁基体の上面
に誘電率が８．０以下のガラス部材を介して取着固定さ
れていることを特徴とするものである。(Means for Solving the Problems) The present invention provides a container comprising an insulating base and a lid and having a cavity for accommodating a semiconductor element therein, and an external electric circuit for connecting the semiconductor element housed in the container. In a package for housing a semiconductor element, one end of the external lead terminal is attached and fixed to the upper surface of the insulating base via a glass member having a dielectric constant of 8.0 or less. It is characterized by this.
（実施例） 次に本発明を添付図面に基づき詳細に説明する。(Example) Next, the present invention will be explained in detail based on the accompanying drawings.
第１図は本発明の半導体素子収納用パッケージの一実施
例を示し、１はセラミック、ガラス等の電気絶縁材料か
ら成る絶縁基体、２は同じく電気絶縁材料から成る蓋体
である。この絶縁基体１と蓋体２とにより絶縁容器３が
構成される。FIG. 1 shows an embodiment of the semiconductor element storage package of the present invention, in which 1 is an insulating base made of an electrically insulating material such as ceramic or glass, and 2 is a lid made of an electrically insulating material. The insulating base 1 and the lid 2 constitute an insulating container 3.
前記絶縁基体１及び蓋体２はそのそれぞれの中央部に半
導体素子を収容するための凹部が形成してあり、絶縁基
体１の凹部底面には半導体素子４が樹脂、ガラス等の接
着材を介し取着固定される。The insulating base 1 and the lid 2 each have a recess formed in the center thereof for accommodating a semiconductor element, and the semiconductor element 4 is attached to the bottom of the recess of the insulating base 1 through an adhesive such as resin or glass. Installed and fixed.
尚、前記絶縁基体１及び蓋体２は従来周知のプレス成形
法を採用することによって形成され、例えば絶縁基体１
等がアルミナセラミックスから成る場合には第１図に示
すような絶縁基体又は蓋体に対応した形状を有するプレ
ス型内にアルミナセラミックスの粉末を充填させるとと
もに一定圧力を印加して成形し、しかる後、成形品を約
１５００℃の温度で焼成することによって製作される。Note that the insulating base 1 and the lid 2 are formed by employing a conventionally well-known press molding method, for example, the insulating base 1
etc. are made of alumina ceramics, the alumina ceramic powder is filled into a press mold having a shape corresponding to the insulating base or lid as shown in Figure 1, and a constant pressure is applied to form the mold. , is manufactured by firing a molded product at a temperature of about 1500°C.
前記絶縁基体１はその上面にアルミニウム（ＡＩ）、銅
（Ｃｕ）、コバール（Ｆｅ−Ｎｉ−Ｃｏ合金）等の金属
材料から成る外部リード端子５の一端がガラス部材６に
より取着固定されており、該外部リード端子５は半導体
素子４の各電極がワイヤ７を介し電気的に接続され、外
部リード端子５を外部回路に接続することにより半導体
素子４は外部回路と接続されることとなる。The insulating base 1 has one end of an external lead terminal 5 made of a metal material such as aluminum (AI), copper (Cu), Kovar (Fe-Ni-Co alloy) attached and fixed to the upper surface thereof by a glass member 6. The external lead terminals 5 are electrically connected to each electrode of the semiconductor element 4 via wires 7, and by connecting the external lead terminals 5 to an external circuit, the semiconductor element 4 is connected to the external circuit.
また前記外部リード端子５を絶縁基体１上面に取着固定
するガラス部材６は誘電率が８．０以下のガラスが使用
され、例えばホウケイ酸系のガラスが好適に使用される
。Further, the glass member 6 for attaching and fixing the external lead terminal 5 to the upper surface of the insulating substrate 1 is made of glass having a dielectric constant of 8.0 or less, for example, borosilicate glass is preferably used.
前記ガラス部材６はその誘電率が８．０以下の低い材料
により成っていることから該ガラス部材６で外部リード
端子５を絶縁基体１の上面に取着固定した場合、外部リ
ード端子５を伝わる電気信号の伝播速度を極めて速いも
のとなすことが可能となり、これによってパッケージ内
に高速駆動する半導体素子を収容させることができる。Since the glass member 6 is made of a material with a low dielectric constant of 8.0 or less, when the external lead terminal 5 is attached and fixed to the upper surface of the insulating base 1 using the glass member 6, the electric current is transmitted through the external lead terminal 5. It becomes possible to make the propagation speed of an electric signal extremely high, and as a result, a semiconductor element that is driven at high speed can be housed in a package.
。
尚、前記ガラス部材６はその誘電率が８．０を越えると
外部リード端子５を伝わる信号の伝播速度が遅くなり、
パッケージ内に近時の高速駆動をする半導体素子を収容
することができなくなってしまうことからガラス部材６
はその誘電率が８．０以下の材料に特定される。. Incidentally, when the dielectric constant of the glass member 6 exceeds 8.0, the propagation speed of the signal transmitted through the external lead terminal 5 becomes slow.
Since it is no longer possible to accommodate recent high-speed driving semiconductor elements in the package, the glass member 6
is specified as a material whose dielectric constant is 8.0 or less.
前記ガラス部材６は例えばホウケイ酸系のガラスから成
る場合、原料粉末としてのシリカ（ＳｉＯ□）６０〜７
０鰐ｔ％、酸化ホウ素（ＢｚＯｉ）２〜２５ｗｔ％、ア
ルミナ（Ａｌｚ（ｈ）１〜５ ｗｔ％、酸化ナトリウム
（ＮａｚＯ）０〜１５−ｔ％及びカルシア（Ｃａ０）Ｏ
〜１０−ｔ％を混合するとともに該混合粉末を約１００
０℃の温度で加熱溶融させることによって製作される。When the glass member 6 is made of borosilicate glass, for example, silica (SiO□) 60 to 7 as raw material powder is used.
0 t%, boron oxide (BzOi) 2-25 wt%, alumina (Alz(h) 1-5 wt%, sodium oxide (NazO) 0-15-t% and calcia (Ca0)O
~10-t% of the mixed powder and approximately 100% of the mixed powder
It is manufactured by heating and melting at a temperature of 0°C.
また前記ガラス部材６を用いて外部リード端子５を絶縁
基体１の上面に取着固定する方法としては、まずホウケ
イ酸系のガラスを粉砕してパウダー状となし、該パウダ
ーに適当な有機溶剤、溶媒を添加混合してガラスペース
トを作成する。次にこのガラスペーストを絶縁基体１の
上面に従来周知のスクリーン印刷法により塗布するとと
もに仮焼し、絶縁基体１上にガラス部材６を仮止めする
。In addition, as a method for attaching and fixing the external lead terminal 5 to the upper surface of the insulating base 1 using the glass member 6, first, borosilicate glass is crushed into a powder form, and a suitable organic solvent is added to the powder. A glass paste is created by adding and mixing a solvent. Next, this glass paste is applied to the upper surface of the insulating substrate 1 by a conventionally well-known screen printing method and calcined, and the glass member 6 is temporarily fixed on the insulating substrate 1.
そして最後に外部リード端子５の一端を前記仮止めされ
たガラス部材６上に！！２置するとともにこれを約９０
０℃の温度で加熱し、ガラス部材６を再溶融させること
によって行われる。Finally, place one end of the external lead terminal 5 on the temporarily fixed glass member 6! ! 2 and add this to about 90
This is done by heating at a temperature of 0° C. to remelt the glass member 6.
かくして、この半導体素子収納用パッケージによれば、
絶縁基体１の凹部底面に半導体素子４を取着固定すると
ともに該半導体素子４の各電極をワイヤ７により外部リ
ード端子５に接続させ、しかる後、絶縁基体１と蓋体２
とを蓋体２の下面に予め取着させておいた樹脂やガラス
等から成る接着材８を介し接合させることによって製品
としての半導体装置が完成する。Thus, according to this package for storing semiconductor elements,
The semiconductor element 4 is attached and fixed to the bottom of the recess of the insulating base 1, and each electrode of the semiconductor element 4 is connected to the external lead terminal 5 by a wire 7. After that, the insulating base 1 and the lid 2 are connected to each other.
A semiconductor device as a product is completed by bonding these through an adhesive 8 made of resin, glass, etc., which has been attached to the lower surface of the lid 2 in advance.
（発明の効果）
本発明の半導体素子収納用パッケージによれば半導体素
子を外部回路に電気的に接続するための外部リード端子
が誘電率８．０以下のガラス部材を介して絶縁基体上に
取着固定されていることから外部リード端子を伝わる電
気信号の伝播速度を極めて速いものとなすことができ、
パッケージ内に近時の高速駆動を行う半導体素子の収容
が可能となる。(Effects of the Invention) According to the semiconductor device storage package of the present invention, external lead terminals for electrically connecting the semiconductor device to an external circuit are mounted on an insulating substrate via a glass member having a dielectric constant of 8.0 or less. Because it is fixed, the propagation speed of the electrical signal transmitted through the external lead terminal can be made extremely fast.
It becomes possible to accommodate semiconductor elements that are recently driven at high speed in the package.
第１図は本発明の半導体素子収納用パッケージの一実施
例を示す断面図である。
１：絶縁基体
２：Ｍ体
３；容器
５：外部リード端子
６：ガラス部材FIG. 1 is a cross-sectional view showing an embodiment of the semiconductor element storage package of the present invention. 1: Insulating base 2: M body 3; Container 5: External lead terminal 6: Glass member
Claims (1)
するための空所を有する容器と、該容器内に収容される
半導体素子を外部電気回路に接続するための外部リード
端子とから成る半導体素子収納用パッケージにおいて、
前記外部リード端子の一端が前記絶縁基体の上面に誘電
率が８．０以下のガラス部材を介して取着固定されてい
ることを特徴とする半導体素子収納用パッケージ。A semiconductor consisting of a container consisting of an insulating base and a lid and having a cavity for accommodating a semiconductor element therein, and an external lead terminal for connecting the semiconductor element housed in the container to an external electric circuit. In the device storage package,
A package for housing a semiconductor element, wherein one end of the external lead terminal is attached and fixed to the upper surface of the insulating base via a glass member having a dielectric constant of 8.0 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10205088A JPH01273337A (en) | 1988-04-25 | 1988-04-25 | Package for accommodating semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10205088A JPH01273337A (en) | 1988-04-25 | 1988-04-25 | Package for accommodating semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01273337A true JPH01273337A (en) | 1989-11-01 |
Family
ID=14316937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10205088A Pending JPH01273337A (en) | 1988-04-25 | 1988-04-25 | Package for accommodating semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01273337A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5773879A (en) * | 1992-02-13 | 1998-06-30 | Mitsubishi Denki Kabushiki Kaisha | Cu/Mo/Cu clad mounting for high frequency devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5711847A (en) * | 1978-02-06 | 1982-01-21 | Ibm | Nonporous glass-ceramic body |
-
1988
- 1988-04-25 JP JP10205088A patent/JPH01273337A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5711847A (en) * | 1978-02-06 | 1982-01-21 | Ibm | Nonporous glass-ceramic body |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5773879A (en) * | 1992-02-13 | 1998-06-30 | Mitsubishi Denki Kabushiki Kaisha | Cu/Mo/Cu clad mounting for high frequency devices |
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