JPH01272111A - Vapor growth of compound semiconductor - Google Patents
Vapor growth of compound semiconductorInfo
- Publication number
- JPH01272111A JPH01272111A JP10114588A JP10114588A JPH01272111A JP H01272111 A JPH01272111 A JP H01272111A JP 10114588 A JP10114588 A JP 10114588A JP 10114588 A JP10114588 A JP 10114588A JP H01272111 A JPH01272111 A JP H01272111A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 150000001875 compounds Chemical class 0.000 title claims abstract description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 10
- 238000001947 vapour-phase growth Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 7
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010408 film Substances 0.000 abstract description 7
- 229910052733 gallium Inorganic materials 0.000 abstract description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- 230000006698 induction Effects 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical group C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- -1 GaAs compound Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XAZAQTBGMXGTBD-UHFFFAOYSA-N tributylarsane Chemical compound CCCC[As](CCCC)CCCC XAZAQTBGMXGTBD-UHFFFAOYSA-N 0.000 description 2
- 101100027969 Caenorhabditis elegans old-1 gene Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- 210000001015 abdomen Anatomy 0.000 description 1
- 230000007059 acute toxicity Effects 0.000 description 1
- 231100000403 acute toxicity Toxicity 0.000 description 1
- 239000002168 alkylating agent Substances 0.000 description 1
- 229940100198 alkylating agent Drugs 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- XEONXSLUONMTJI-UHFFFAOYSA-N propylarsenic Chemical compound CCC[As] XEONXSLUONMTJI-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- WWVNWQJKWKSDQM-UHFFFAOYSA-N triethylarsane Chemical compound CC[As](CC)CC WWVNWQJKWKSDQM-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分腎〕
本発明は■族原料としてトリアルキルアルシンを用いる
ｍ−■族化合物半導体の熱分解気相成長法の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Applications] The present invention relates to an improvement in a method for pyrolytic vapor phase growth of m-III group compound semiconductors using trialkylarsine as a group III raw material.
近年、■−ｖ族化合物半導体は半導体レーザー、ＦＥＴ
、Ｌ已り等種々のデバイス用に開発が進められている。In recent years, ■-v group compound semiconductors have been used in semiconductor lasers and FETs.
, L-length, and other various devices are being developed.
これらのデバイス用化合物半導体エピタキシャル結晶は
クロライド法、へイドライド法、ＭＢＥ法（分子線エピ
タキシャル成長法）、ＬＰＥ法（液相エピタキシャル成
長法）、ＭＯ−ＣＶＤ法（有機金属熱分解気相成長法）
により製作されており、特にＭＯ−ＣＶＤ法は新しい量
産法として注目を集めている。These device-use compound semiconductor epitaxial crystals are produced using the chloride method, heidide method, MBE method (molecular beam epitaxial growth method), LPE method (liquid phase epitaxial growth method), and MO-CVD method (metal-organic pyrolysis vapor phase growth method).
In particular, the MO-CVD method is attracting attention as a new mass production method.
この方法はＶ族元素であるＡｓソースとしてアルシン（
Ａｓｌｌｓ）が使用されている。一般に＾ｓ１１．ガス
は圧力容器に圧縮充填して使用に供されるが、近年その
使用量が増大したため、１ｌｓｌｌｓの安全な取扱い、
特に漏洩時の危険性に対する対策が重要な課題になって
いる。This method uses arsine (
Aslls) are used. Generally ^s11. Gas is compressed and filled into pressure vessels for use, but as the amount of gas used has increased in recent years, it has become important to ensure safe handling of 1lslls.
In particular, countermeasures against the risk of leakage have become an important issue.
Ａ ｓ Ｉｆ ｓ分子の■を全てアルキル基に置換、し
たトリアルキルアルシンＣＱｓ＾３）のうちトリメチル
アルシン（（Ｃ１ｌｉ）＊Ａｓ ） 、）リエチルアル
シン（（Ｃａｌｌｓ）ｓ＾Ｓ）はその急性毒性が低いこ
とが見出されており、さ、らにトリアルキルアルシンの
多くは常温で液体であり、漏れてもその平衡蒸気圧相当
量の影響ですみ、Ａ ｓ ＩＩ ｓガスより安全面で優
れていることから、トリアルキルアルシンをＡｓＨｌの
代替原料として用いる検討がなされている０例えば、ト
リメチルガリウム（（Ｃ１ｌｓ） ｓＧａ ）と（ＣＩ
ｌｓ）ｓ＾Ｓとを組み合わせてＧａＡｓエピタキシャル
薄膜を得る検討がなされている。Among the trialkylarsine CQs^3) in which all ■ in the A s If s molecule are replaced with alkyl groups, trimethylarsine ((C1li)*As),) lithylarsine ((Calls)s^S) has a high acute toxicity. In addition, many trialkylarsines are liquid at room temperature, and even if they leak, they are only affected by the amount equivalent to their equilibrium vapor pressure, making them safer than A s II s gases. For example, trimethylgallium ((C1ls) sGa ) and (CI
ls) s^S to obtain a GaAs epitaxial thin film is being considered.
しかしながら１．得られる腹の純度は口Ｈ８を用いる場
合よりも劣るという欠点がある。この原因の一つとして
、特に＾３に結合しているアルキル基の炭素がＧａＡｓ
結晶中に８！留してしまうことが原因であることが確か
められ、解決すべき問題となっていた。However, 1. There is a drawback that the purity of the obtained belly is inferior to that when using Mouth H8. One of the reasons for this is that the carbon of the alkyl group bonded to ^3 is GaAs.
8 in crystal! It was confirmed that the cause of the problem was that the driver was left behind, and it was a problem that needed to be resolved.
一方、＾ｓＨ，のＨの一部分をアルキル基に置き換えた
（Ｃ１１１ｓ）糞Ａｓ１１、（Ｃ，ｌｌ９）＾ａｌ１１
等のジアルキルアルシン、モノアルキルアルシンを＾ｓ
＃＋３代替原料として用いる検討が行われており、残留
不純物が減少した比較的良好な膜が得、られている、し
かしながら、このような部分アルキル化アルシンは、ア
ルキル化剤を過剰に用いて得ることができる全置換型、
すなわちＲ３Ａｓと異なり、純度良く合成することが非
常に困難であり、たとえ金属性不純物を通常の半導体試
薬並みに減らせたとしても、反応生成物としてはＲａＡ
ｓＨ，−ａ （ｎ −０＋１＋２＋３）の混合物となり
、合成コスト上昇の原因となる精蒸留を繰返し９行って
も分離困難なことが多い、このことは原料を気相で供給
する成長法においては重大であり、Ａ合物としての蒸気
圧を制御できないことを意味し、反応の供給を規定でき
ないという不都合を生じる。さらＣ２部分アルキル化ア
ルシンはその毒性が猛毒の八ｓ Ｉｆ ｓに近づく危惧
もある上にＡｓ ＩＩ ｘが混入する可能性を考慮する
と、合成や使用上特段の安全対策が不可欠であるという
欠点があった。On the other hand, (C111s) feces As11, (C,ll9)^al11 in which part of the H of ^sH, is replaced with an alkyl group
Dialkylarsine, monoalkylarsine, etc.
#+3 Studies have been conducted to use it as an alternative raw material, and relatively good films with reduced residual impurities have been obtained.However, such partially alkylated arsine cannot be obtained by using an excessive amount of alkylating agent. Full substitution type, which can be
In other words, unlike R3As, it is extremely difficult to synthesize with high purity, and even if the metallic impurities can be reduced to the same level as that of ordinary semiconductor reagents, the reaction product will be RaAs.
This results in a mixture of sH, -a (n -0+1+2+3), which is often difficult to separate even after 9 repeated rounds of distillation, which increases the synthesis cost. This is important in growth methods that supply raw materials in the gas phase. This means that the vapor pressure of Compound A cannot be controlled, resulting in the inconvenience that the reaction supply cannot be regulated. Furthermore, C2-partially alkylated arsine has the disadvantage that special safety measures are essential during synthesis and use, considering its toxicity to be close to that of the highly toxic 8s If s and the possibility of contamination with As II x. there were.
本発明の目的は上記の欠点を改良したＧａＡｓ化合物半
導体の気相成長法を提供することにある。An object of the present invention is to provide a method for vapor phase growth of GaAs compound semiconductors that improves the above-mentioned drawbacks.
すなわち、本発明は、Ｖ族原料としてトリアルキルアル
シンを用いるｍ−■族化合物半導体の熱分解気相成長法
において、アンモニアを添加することを特徴とする気相
成長方法を提供することにある。That is, an object of the present invention is to provide a vapor phase growth method characterized in that ammonia is added in a pyrolytic vapor phase growth method of an m-■ group compound semiconductor using trialkylarsine as a V group raw material.
本発明は上記の実情に鑑み鋭意検討の結果、■族原料の
アルキルアルシンにアンモニア（ＮＨｓ ）を添加する
ことにより、得られる化合物半導体気相成長薄膜の純度
が大幅に改良され、かつ安全性も向上できることを見出
したものである。The present invention was developed as a result of intensive studies in view of the above-mentioned circumstances. By adding ammonia (NHs) to alkylarsine, which is a Group Ⅰ raw material, the purity of the obtained compound semiconductor vapor phase grown thin film is greatly improved, and safety is also improved. This is something we have discovered that can be improved.
以下、本発明について詳述する。The present invention will be explained in detail below.
本発明に使用の第ｍ族原料としては通常、トリメチルガ
リウム、トリエチルガリウム等のアルキルガリウムを使
用し、第■族原料としてトリメチルアルシン、トリエチ
ルアルシン、トリーｎ−プロピルアルシン、トリー１−
プロピルアルシン、トリーｎ−ブチルアルシン、トリー
インブチルアルシン等のトリアルキルアルシンが使用さ
れる。The Group M raw materials used in the present invention usually include alkyl gallium such as trimethyl gallium and triethyl gallium, and the Group II raw materials include trimethylarsine, triethyl arsine, tri-n-propyl arsine, and tri-1-
Trialkylarsines such as propylarsine, tri-n-butylarsine, and tri-n-butylarsine are used.
また、本発明においては上記のトリアルキルアルシンに
加えてアンモニアを添加することが必要である。添加す
るアンモニアの量はトリアルキルアルシンの５モル％以
上が添加効果が顕著であるので好ましく、２０モル％以
上がより好ましい、一方。Further, in the present invention, it is necessary to add ammonia in addition to the above-mentioned trialkylarsine. The amount of ammonia to be added is preferably 5 mol % or more of the trialkylarsine since the addition effect is significant, and more preferably 20 mol % or more.
上限は特に限定されないが、余りに多いとアンモニア由
来の不純物を薄膜に取り込む場合があるので、好ましく
は５００モル％以下、より好ましくは２００モル％以下
である。The upper limit is not particularly limited, but if it is too large, impurities derived from ammonia may be incorporated into the thin film, so it is preferably 500 mol% or less, more preferably 200 mol% or less.
第１図は本発明を実施するための熱分解気相成長装置の
一例の概略図である。以下図を用いて本発明を具体的に
説明する。FIG. 1 is a schematic diagram of an example of a pyrolysis vapor phase growth apparatus for carrying out the present invention. The present invention will be specifically explained below using the drawings.
マスフローコントローラー（以下ＮＦＣ） １からの水
素ガスでバブラー２に容れられたトリアルキルガリウム
等の第■族原料をバブルさせて蒸発させる。蒸発するト
リアルキルガリウム量はバブラー２の温度、ＭＰＣＩの
水素量とＮＰＣ３で前取って決められた量に調節され、
反応器ｌＯに導入される。Mass flow controller (hereinafter referred to as NFC) Hydrogen gas from 1 bubbles and evaporates Group 1 raw materials such as trialkyl gallium contained in bubbler 2. The amount of trialkyl gallium to be evaporated is adjusted to a predetermined amount using the temperature of the bubbler 2, the amount of hydrogen in the MPCI, and the NPC 3.
into the reactor lO.
通常、トリアルキルガリウム原料がトリメチルガリウム
の場合、１０−’〜１０−’ｇｏ１ノ１ｎの範囲である
。Usually, when the trialkyl gallium raw material is trimethyl gallium, the range is from 10-' to 10-'go1-1n.
一方、ＭＦＣ４から水素ガスでバブラー５に容れられた
第■族原料であるトリメチルアルシン等のトリアルキル
アルシンをバブリングして蒸発させ、同様にＭＦＣ６を
通って反応器１０に導入される０通常、アルキルアルシ
ン／トリアルキルガリウムモル比は５〜２００の範囲が
一般的である。また、アンモニアは通常ボンベ７よりＭ
ＰＣＢを通って反応１１０に導入される。さらにキャリ
ヤーの水素ガスはＭＦＣ９を通って反応器１０に導入さ
れ原料と混合される。ｎ内には高周波誘導加熱が可能な
グラファイト支持台（サセプター）１２が設置され、高
周波誘導加熱コイル１１により５００〜８００℃に加熱
され、その上にＧａＡｓ基板１３が載置されており、前
記の導入された反応ガスは混合された後、基板付近で熱
分解し、基板１３上に化合物半導体１ｌｌｌとしてエピ
タキシャル成長する０反応後のガスは排気口１４から排
出される。On the other hand, trialkylarsine such as trimethylarsine, which is a Group Ⅰ raw material, contained in the bubbler 5 is bubbled with hydrogen gas from the MFC 4 to evaporate it, and similarly, the alkyl alkyl The arsine/trialkyl gallium molar ratio is generally in the range of 5 to 200. Also, ammonia is usually M from cylinder 7.
It is introduced into reaction 110 through the PCB. Further, the carrier hydrogen gas is introduced into the reactor 10 through the MFC 9 and mixed with the raw material. A graphite support (susceptor) 12 capable of high-frequency induction heating is installed inside n, and is heated to 500 to 800°C by a high-frequency induction heating coil 11, on which a GaAs substrate 13 is placed. After the introduced reaction gases are mixed, they are thermally decomposed near the substrate, and the gas after the zero reaction, which is epitaxially grown as a compound semiconductor on the substrate 13, is discharged from the exhaust port 14.
（発明の効果）
本発明においては第Ｖ族原料であるトリアルキルアルシ
ンにアンモニアを添加することにより、不純物、特に炭
素不純物の少ない良好な化合物半導体気相エピタキシ中
ル膜を製造することができ。(Effects of the Invention) In the present invention, by adding ammonia to trialkylarsine, which is a Group V raw material, it is possible to produce a good compound semiconductor vapor phase epitaxy film containing few impurities, especially carbon impurities.
また従来のアルシンを使用した方法に比較して安全性の
面で大幅に改良されており、工業的にみて有利な方法で
ある。Furthermore, compared to the conventional method using arsine, this method is significantly improved in terms of safety, and is an advantageous method from an industrial perspective.
（実施例］
以下、実施例及び比較例により本発明をより具体的に説
明するが、本発明はこれらにより限定されるものではな
い。(Examples) Hereinafter, the present invention will be explained in more detail with reference to Examples and Comparative Examples, but the present invention is not limited thereto.
実施例１，２、比較例１
第１図に示した装置によりＧａＡｓ基板温度６５０℃で
ＧａＡｓの成長を行ったａ （ＣｇＨｉ）３Ａｓ と（
ＣＨｓ） ｓＧａをそれぞれバブラー２．５でバブリン
グ用水素ガスに飽和させ、ＦＭＣ３，６を通して反応器
ｌＯに導入した。なお、（Ｃ１ｌｌｓ）ｓ＾ｓ 、（Ｃ
Ｈｓ）３Ｇａ各原料の供給量はＦＭＣＩ、４．３．６お
よびバブラー２．５の温度を１ａｖＩｉに４１１節する
ことにより、それぞれ２．２８Ｘ１０−’ｍｏｌ／ｓｉ
ｎ ｓ ５．１１ｘ１０−”ｍｏ１／ｓｔｎ とし、こ
れらのガスをＮ１１．ボンベ７からＭＰＣＢを通って導
入されたＮ１１．と混合し、更にＦＭＣ９を通って導入
されたキャリヤー水素ガス（２，７１／５ｉｎ）で希釈
した。Examples 1 and 2, Comparative Example 1 GaAs was grown using the apparatus shown in Fig. 1 at a GaAs substrate temperature of 650°C.
CHs) sGa was each saturated with hydrogen gas for bubbling using bubblers 2.5 and introduced into the reactor IO through FMCs 3 and 6. In addition, (C1lls)s^s, (C
Hs) 3Ga The supply amount of each raw material is 2.28X10-'mol/si by setting the temperature of FMCI, 4.3.6 and bubbler 2.5 to 1avIi.
n s 5.11x10-"mo1/stn, and these gases are mixed with N11. introduced from N11. cylinder 7 through the MPCB, and further with carrier hydrogen gas (2,71/stn) introduced through FMC9. 5 in).
Ｎ１１．ガスの供給量は（Ｃｌｌｓ）ｓ＾Ｓの２０モル
％となるように！ＩｉＩｗシた０反応中央部に高周波誘
導加熱できるグラファイト性支持台１２があり、この上
に（１００）面ＧａＡｓ単結晶基板！３を置き、成長温
度６５０℃に加熱し、前記導入原料ガスを吹きつけてエ
ピタキシャル成長を実施した。１時間の成長時間で約３
ＩＩ−の膜厚まで成長した。更に、ＮＨｔガスの量を（
Ｃａｌｌｓ）ｓ＾Ｓの１００モル％に変更した以外は上
記と同様な条件でエピタキシャル成長を実施した。N11. The gas supply amount should be 20 mol% of (Clls)s^S! At the center of the IiIw reaction, there is a graphite support 12 that can be heated by high-frequency induction, and on top of this is a (100)-plane GaAs single crystal substrate! 3 was placed, heated to a growth temperature of 650° C., and the introduced raw material gas was blown to perform epitaxial growth. Approximately 3 in 1 hour of growth time
The film grew to a film thickness of II-. Furthermore, the amount of NHt gas (
Epitaxial growth was carried out under the same conditions as above except that the amount of s^S was changed to 100 mol %.
また、比較のため、旧１．ガスを使用しない以外は実施
例と同様にエピタキシャル成長を実施した。Also, for comparison, the old 1. Epitaxial growth was performed in the same manner as in the example except that no gas was used.
得られたエピタキシャル成長膜をホトルミネッセンス測
定装置で測定した結果を第２図に示す。The results of measuring the obtained epitaxially grown film using a photoluminescence measuring device are shown in FIG.
何れの実施例とも、波長０．８２ ＃鋤近傍のバンド端
発光が強く認められ純度が向上していることが判った。In all Examples, strong band edge emission near the wavelength of 0.82 #plow was observed, indicating that the purity was improved.
更に不純物炭素起因の０．８３μｍピークのバンド端発
光に対する相対強度が比較例のものより顕著に減少して
いることからも炭素不純物が減少していることが判った
。Furthermore, it was also found that the carbon impurities were reduced because the relative intensity of the band edge emission of the 0.83 μm peak due to impurity carbon was significantly reduced compared to that of the comparative example.
第１図は本発明を実施するのに使用される気相成長装置
の一例の概略図であり、第２図は実施例。
比較例で得られたエピタキシャル成長膜のホトルミネッ
センススペクトルを示す図である。
ｌＯ・・−・反応器、１２−・・−・グラファイト支持
台、１３・・・−・ＧａＡｓ基板
ＮＨ３／Ｃ２Ｈ５〕内
モル％
三ＰｉＣ長 （ｎｍ）
厘２図
手続補正書く自発）FIG. 1 is a schematic diagram of an example of a vapor phase growth apparatus used to carry out the present invention, and FIG. 2 is an example. FIG. 3 is a diagram showing a photoluminescence spectrum of an epitaxially grown film obtained in a comparative example. 1O...--Reactor, 12---Graphite support, 13...--GaAs substrate NH3/C2H5] mol% 3PiC length (nm) 2 Figure procedure corrections spontaneously)
Claims (1)
Ｖ族化合物半導体の熱分解気相成長法において、アンモ
ニアを添加することを特徴とする化合物半導体の気相成
長方法。III- using trialkylarsine as a group V raw material
A method for vapor phase growth of a compound semiconductor, characterized in that ammonia is added in the pyrolytic vapor phase growth method for group V compound semiconductors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10114588A JPH01272111A (en) | 1988-04-22 | 1988-04-22 | Vapor growth of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10114588A JPH01272111A (en) | 1988-04-22 | 1988-04-22 | Vapor growth of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01272111A true JPH01272111A (en) | 1989-10-31 |
Family
ID=14292910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10114588A Pending JPH01272111A (en) | 1988-04-22 | 1988-04-22 | Vapor growth of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01272111A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260349A (en) * | 2008-04-11 | 2009-11-05 | Praxair Technol Inc | Reagent dispensing apparatus, and delivery method |
-
1988
- 1988-04-22 JP JP10114588A patent/JPH01272111A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009260349A (en) * | 2008-04-11 | 2009-11-05 | Praxair Technol Inc | Reagent dispensing apparatus, and delivery method |
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