JPH01271915A - Magnetic storage body and magnetic storage device and its manufacture - Google Patents
Magnetic storage body and magnetic storage device and its manufactureInfo
- Publication number
- JPH01271915A JPH01271915A JP9942788A JP9942788A JPH01271915A JP H01271915 A JPH01271915 A JP H01271915A JP 9942788 A JP9942788 A JP 9942788A JP 9942788 A JP9942788 A JP 9942788A JP H01271915 A JPH01271915 A JP H01271915A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal
- magnetic
- magnetic storage
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 44
- 238000003860 storage Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 11
- 229930195729 fatty acid Natural products 0.000 claims abstract description 11
- 239000000194 fatty acid Substances 0.000 claims abstract description 11
- 150000004665 fatty acids Chemical class 0.000 claims abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000460 chlorine Substances 0.000 abstract description 4
- 229910052801 chlorine Inorganic materials 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000344 soap Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000714 At alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は磁気記憶装置(磁気ディスク装置、磁気ドラム
装置及び磁気テープ装置)及び該磁気記憶装置に用いら
れる磁気記憶体(以下、記憶体と呼ぶ)及びその製造方
法に関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to magnetic storage devices (magnetic disk devices, magnetic drum devices, and magnetic tape devices) and magnetic storage bodies (hereinafter referred to as storage bodies) used in the magnetic storage devices. ) and its manufacturing method.
金属磁性媒体(以下、全4媒体と呼ぶ)を有する記憶体
に於いては、記録再生ヘッド(以下、ヘッドと呼ぶ)と
の接触に耐えるだけの充分な植械的信頼性と水分、塩素
等の腐食環境に充分耐える耐食性が要求される。A storage body having a metal magnetic medium (hereinafter referred to as all four media) must have sufficient mechanical reliability to withstand contact with a recording/reproducing head (hereinafter referred to as a head) and must be free from moisture, chlorine, etc. Corrosion resistance is required to withstand corrosive environments.
従来より基板はアルマイト処理やN1−Pメツキ等の非
磁性メツキ処理後、鏡面化やすし目付けのための研摩が
施こされたAt合金基板やガラス板、セラミック板等が
用いられ、次にN1−P。Conventionally, the substrates used are At alloy substrates, glass plates, ceramic plates, etc., which have been subjected to alumite treatment or non-magnetic plating treatment such as N1-P plating, and then polished to make them mirror-finished or have a surface density. P.
N i −Ou −P等の非磁性メツキやOr、Bi等
の被覆の有無の後、強磁性金属媒体を被覆し、更にSi
n、(ポリケイ酸を含む)、ktN、O。After non-magnetic plating such as Ni-Ou-P and coating with Or, Bi, etc., a ferromagnetic metal medium is coated, and then Si is coated.
n, (including polysilicic acid), ktN, O.
Si、N、とkt20.の固溶体等の保護膜が被覆され
、更にパー70ロポリエーテルに代表される液体潤滑剤
や高級アルコールや脂肪酸に代表される固体潤滑剤の薄
層が被覆される。Si, N, and kt20. A protective film such as a solid solution of is coated, and a thin layer of a liquid lubricant typified by Per70 polyether or a solid lubricant typified by higher alcohol or fatty acid is further coated.
上記記憶体は一応の耐久性能を有し、既に市場に出回り
始めているものの大きな欠点を有している。Although the above-mentioned memory bodies have a certain level of durability and have already begun to appear on the market, they have major drawbacks.
上記記憶体を搭載した磁気記憶装置を40℃80%R,
H,の環境下に放置すると記憶体1枚の1〜2ケ所に腐
食点が発生し、ディフェクトエラーに至る。又記憶体と
ヘッドとの接触を繰り返すことにより、両者間の摩擦係
数が増大し、スピンドルモーターがしばしば停止に至っ
た。A magnetic storage device equipped with the above storage body was heated at 40℃80%R.
If left in an environment of H., corrosion points will occur in one or two places on one memory body, leading to defect errors. Furthermore, repeated contact between the storage body and the head increased the coefficient of friction between them, often causing the spindle motor to stop.
従来の技術では、金属媒体の耐食性を充分に確保できず
、又記憶体とヘッド間の機械的信頼性を充分に確保でき
ないという課題を有していた。Conventional techniques have had the problem of not being able to ensure sufficient corrosion resistance of the metal medium, and not being able to ensure sufficient mechanical reliability between the storage body and the head.
本発明は上記の課題を解決するものであり、その目的と
するところは、水分や塩素等の環境下に於ける金属媒体
の耐食性を飛躍的に向上させるとともに、記憶体とヘッ
ド間の摩擦係数を大幅に低減し、且つその効果を長期に
維持しうる信頼性に優れた記憶体の製造、提供と該記憶
体を用いた磁気記憶装置を提供することにある。The present invention solves the above problems, and its purpose is to dramatically improve the corrosion resistance of metal media in environments containing moisture and chlorine, and to improve the coefficient of friction between the storage body and the head. It is an object of the present invention to manufacture and provide a highly reliable memory body that can significantly reduce the amount of water and maintain its effect for a long period of time, and to provide a magnetic memory device using the memory body.
本発明は、基体上に金属磁性媒体が被覆され、該金属磁
性媒体上に該金属磁性媒体を構成する金属元素の酸化物
薄膜が被覆され、次に該酸化物薄膜上に炭素質薄膜が被
覆され、更に脂肪酸の金属塩を被覆せしめた事を特徴と
する。In the present invention, a metal magnetic medium is coated on a substrate, a thin oxide film of a metal element constituting the metal magnetic medium is coated on the metal magnetic medium, and then a carbonaceous thin film is coated on the oxide thin film. and is further coated with a metal salt of a fatty acid.
金属媒体は従来技術と同様の材料、製法によって形成す
る。すなわち、00.IFe、Or、Ni、P、貴金属
等から成る合金を、湿式メツキ、法やスパッタリングに
代表される乾式成膜法で形成する。The metal medium is formed using the same materials and manufacturing methods as in the prior art. That is, 00. An alloy made of IFe, Or, Ni, P, noble metals, etc. is formed by a dry film forming method such as wet plating, sputtering, or the like.
上記金属媒体を構成する金属元素の酸化物は、Co3O
4、Fe、O5,0rb1等に代表きれるが、PVD法
やOVD法等の乾式成膜法や有機金属化合物の熱分解法
等の湿式成膜法によって得られるが、最も適切な方法は
、酸素ガスを含むガス体のプラズマにさらす事によって
酸化物を成長される方法である。膜厚は50〜200k
が適切である。The oxide of the metal element constituting the metal medium is Co3O
4, Fe, O5, 0rb1, etc. can be obtained by dry film forming methods such as PVD and OVD methods, and wet film forming methods such as thermal decomposition of organometallic compounds, but the most suitable method is oxygen This is a method in which oxides are grown by exposing them to plasma of a gas containing gas. Film thickness is 50-200K
is appropriate.
炭素質薄膜は、グラファイト、ダイヤモンド。Carbon thin films are graphite and diamond.
アモルファスの単独、混合、積層であり、100〜50
0^の膜厚が適切である。成膜は、スパッタリング法、
イオンブレーティング法等のPVD法やOVD法の乾式
成膜法で可能である。Amorphous, single, mixed, laminated, 100 to 50
A film thickness of 0^ is appropriate. Film formation is done by sputtering method,
This can be done by a dry film forming method such as a PVD method such as an ion blasting method or an OVD method.
脂肪酸の金属塩は、飽和、不飽和或いは直鎖。Metal salts of fatty acids can be saturated, unsaturated or straight chain.
分校の制限は無い脂肪酸と金属との塩であり、−般にセ
ッケン或いは金属セッケンと称される物質を言い、望ま
しくは炭素数12以上の直鎖の脂肪酸と1価、2価、3
価の金属と塩である。これらは単独もしくは混合し、可
溶性溶媒に希釈した後スプレー法、スピンナー法、ディ
ッピング法や超音波噴霧吹き付は法等の既知の製法で塗
布し、必要に応じて焼成する。溶媒希釈の割合は得たい
膜厚に応じて適宜決定する。又焼成は50〜150℃
1分−820分で充分であり、膜厚は20〜1soXが
適切である。It is a salt of a fatty acid and a metal, which has no restrictions on branching properties, and is generally referred to as a soap or metal soap.
metals and salts. These may be used alone or in combination, diluted with a soluble solvent, applied by a known manufacturing method such as a spray method, a spinner method, a dipping method, or an ultrasonic spray method, and baked if necessary. The ratio of solvent dilution is appropriately determined depending on the desired film thickness. Also, firing is at 50-150℃
A time of 1 minute to 820 minutes is sufficient, and a film thickness of 20 to 1 soX is appropriate.
本発明によれば、金属媒体上に、硬度、緻密性、絶縁性
に優れ、ヘッド材料との凝着を起こしにくい酸化物薄膜
が被覆される。特に酸素ガスを含むガス体のプラズマ処
理により、金属媒体上の付着物は除去され、極めてピン
ホールが少なく且つ金属媒体との密着性に優れる酸化物
薄膜が被覆される。According to the present invention, a metal medium is coated with an oxide thin film that has excellent hardness, denseness, and insulation properties, and is less likely to adhere to the head material. Particularly, by plasma treatment of a gas containing oxygen gas, deposits on the metal medium are removed, and a thin oxide film with extremely few pinholes and excellent adhesion to the metal medium is coated.
該酸化物薄膜が水分や塩素等の腐食因子から金属媒体を
保詣する。又炭素質薄膜そして脂肪酸の金属塩の薄膜に
よってヘッドとの耐摩耗性を確保しようとするものであ
るが、ヘッドの衝撃摩耗が繰り返されることにより、ヘ
ッドが炭素質薄膜を通過し金属媒体部に至る場合が生じ
、それによりヘッドが致命的ダメージを受け、ヘッドク
ララシーに至った。本発明ではヘッドが炭素質膜を通過
しても、金属媒体に直接接触することが無く、酸化物薄
膜の低摩擦係数、非凝着性によってヘッドにほとんどダ
メージを与える事は無い。The thin oxide film protects the metal medium from corrosive agents such as moisture and chlorine. In addition, a thin film of carbonaceous material and a thin film of metal salt of fatty acid are used to ensure wear resistance between the head and the head, but repeated impact wear on the head causes the head to pass through the thin film of carbonaceous material and damage the metal media. This resulted in fatal damage to the head, resulting in head clarity. In the present invention, even when the head passes through the carbonaceous film, it does not come into direct contact with the metal medium, and the low coefficient of friction and non-adhesive properties of the oxide thin film cause almost no damage to the head.
以上により長期機械的信頼性及び保存信頼性に優れた記
憶体の製造、提供が可能になり、更に該憶記体を用いる
ことにより磁気記憶装置の信頼性は著るしく向上した。As described above, it has become possible to manufacture and provide a memory body with excellent long-term mechanical reliability and storage reliability, and furthermore, by using the memory body, the reliability of a magnetic memory device has been significantly improved.
境面仕上げされたディスク状アルミニウム合金基板上に
非磁性N1−P合金メツキを約15μm厚を施こした後
、研摩により表面粗度Rα=70〜120X、Rmax
=7oo〜15oo又に表面すし目付は加工し、更にc
o −N i −P合金メツキを約[105μm厚に施
こした。After applying non-magnetic N1-P alloy plating to a thickness of approximately 15 μm on a surface-finished disk-shaped aluminum alloy substrate, the surface roughness Rα = 70 to 120X, Rmax is achieved by polishing.
= 7oo ~ 15oo, and the surface weight is processed and further c
o-Ni-P alloy plating was applied to a thickness of approximately 105 μm.
次にマグネトロンスパッタ装置に上記基板をセットし、
5 X 10−’ torrまで排気後、酸素ガスを導
入し、0−1tOrr とし、RF印加(基板を陰極
)400Wで第1表に示す処理時間により、金属媒体上
に酸化物薄膜を成長させた。Next, set the above substrate in a magnetron sputtering device,
After evacuation to 5 x 10-' torr, oxygen gas was introduced to set the pressure to 0-1 tOrr, and an oxide thin film was grown on the metal medium by applying RF (substrate as cathode) at 400 W for the processing time shown in Table 1. .
次に酸素ガスの導入を止め、再び5 X 10−”to
rrまで排気後、Arガスを導入し、同じく第1表に示
したターゲットを用い、パワー密度4W/−で炭素質薄
膜を成膜した。Next, the introduction of oxygen gas was stopped and the 5 × 10-”to
After evacuation to rr, Ar gas was introduced, and a carbonaceous thin film was formed using the target shown in Table 1 at a power density of 4 W/-.
更に同じく第1表に示す脂肪酸の金属塩をメタノールと
フロン11 g′Vco、o s w/v% (1’
)’l+度テ希釈し、ディッピング法(j Ocm /
m )で塗布した。Furthermore, metal salts of fatty acids shown in Table 1 were mixed with methanol and Freon 11 g'Vco, o s w/v% (1'
)'l + degree diluted and dipping method (j Ocm /
m).
第 1 表
上記製造方法により作製した記憶体と、3370タイプ
の薄膜ヘッド(フライ・昂イト0.15μ扉p 977
L /see )を用い磁気記憶装置を作製し、下記試
験によって評価した。結果は第2表に示す。Table 1 Memory bodies manufactured by the above manufacturing method and 3370 type thin film head (Fly 0.15μ door p 977
A magnetic storage device was manufactured using L/see) and evaluated by the following test. The results are shown in Table 2.
(g a s s耐久試験
O3S動作(立ち上がり、立ち下がり時間10sec)
前後の外観変化、静摩擦係数と出力の低下率を求める。(Ga ss durability test O3S operation (rise and fall time 10 seconds)
Determine the change in appearance before and after, the coefficient of static friction, and the rate of decrease in output.
(2)耐食性試験
80℃、90%R,H,の環境下に放置して、放置時間
の経過をおって、ミッシングビット数を測定し、その増
加が認められた時点を寿命と判断した。(2) Corrosion Resistance Test The product was left in an environment of 80°C and 90% R, H, and after the time had passed, the number of missing bits was measured, and the time when the number of missing bits increased was determined to be the end of its life.
第 2 表
〔発明の効果〕
高記録密−度対応の記憶体としての薄膜型記惚体を用い
た磁気記憶装置が登場して久しいが、長期信頼性に対す
る不安からその使用は一部に限られていた。Table 2 [Effects of the Invention] Magnetic storage devices using thin-film eclipses have been on the market for a long time as storage media compatible with high recording densities, but their use is limited to some due to concerns about long-term reliability. It was getting worse.
本発明によれば、加温理工で記憶体が用いられても金属
媒体は実用的に何等の影響を受けず、又増々硬質化、低
フライハイド化するヘッドを用いての機械的信頼性が高
いので、更に小型化し、厳しい環境下で用いられる磁気
記憶装置に搭載されても、記憶体、ヘッドはともに特性
劣化は、はとんど認められない。According to the present invention, even if a memory medium is used in heating process, the metal medium will not be affected in any way in practical terms, and the mechanical reliability will be improved even with heads that are becoming increasingly hard and have low fly-hide. Since it is expensive, even if it is further miniaturized and installed in a magnetic storage device used in harsh environments, there will hardly be any noticeable deterioration in the characteristics of both the storage body and the head.
以上の如く、高記録密度対応の高耐久性記憶体の製造、
提供そして該記憶体を用いることにより信頼性の高い磁
気記憶装置の提供が可能になった以上
出願人 セイコーエプソン株式会社As described above, manufacturing of highly durable memory bodies compatible with high recording density,
Applicant: Seiko Epson Corporation
Claims (6)
体上に該金属磁性媒体を構成する金属元素の酸化物薄膜
が被覆され、次に該酸化物薄膜上に炭素質薄膜が被覆さ
れ、更に脂肪酸の金属塩を被覆せしめた事を特徴とする
磁気記憶体。(1) A metal magnetic medium is coated on a substrate, a thin oxide film of a metal element constituting the metal magnetic medium is coated on the metal magnetic medium, and then a carbonaceous thin film is coated on the oxide thin film. , a magnetic memory further coated with a metal salt of a fatty acid.
磁気記憶装置。(2) A magnetic storage device characterized by using the magnetic storage body according to item 1.
磁性媒体上に該金属磁性媒体を構成する金属元素の酸化
物薄膜を形成させる工程、次に該酸化物薄膜上に炭素質
薄膜を形成させる工程、更に該炭素質薄膜上に脂肪酸の
金属塩の薄膜を形成させる工程より成る事を特徴とする
磁気記憶体の製造方法。(3) A step of forming a metal magnetic medium on the substrate, then a step of forming an oxide thin film of a metal element constituting the metal magnetic medium on the metal magnetic medium, and then a carbonaceous thin film on the oxide thin film. 1. A method for manufacturing a magnetic memory body, comprising the steps of: forming a thin film of a metal salt of a fatty acid on the carbonaceous thin film;
ス含むガス体のプラズマにさらす事により、該金属磁性
媒体の酸化物薄膜を形成させる事を特徴とする第3項記
載の磁気記憶体の製造方法。(4) Manufacture of the magnetic storage body according to item 3, characterized in that a thin oxide film of the metal magnetic medium is formed by exposing the substrate coated with the metal magnetic medium to plasma of a gas containing at least oxygen gas. Method.
体。(5) A magnetic memory obtained by the manufacturing method described in item 4.
磁気記憶装置。(6) A magnetic storage device characterized by using the magnetic storage body according to item 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9942788A JPH01271915A (en) | 1988-04-22 | 1988-04-22 | Magnetic storage body and magnetic storage device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9942788A JPH01271915A (en) | 1988-04-22 | 1988-04-22 | Magnetic storage body and magnetic storage device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01271915A true JPH01271915A (en) | 1989-10-31 |
Family
ID=14247156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9942788A Pending JPH01271915A (en) | 1988-04-22 | 1988-04-22 | Magnetic storage body and magnetic storage device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01271915A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000049608A1 (en) * | 1999-02-16 | 2000-08-24 | Hyundai Electronics America, Inc. | Magnetic recording medium with improved performance properties and methods |
-
1988
- 1988-04-22 JP JP9942788A patent/JPH01271915A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000049608A1 (en) * | 1999-02-16 | 2000-08-24 | Hyundai Electronics America, Inc. | Magnetic recording medium with improved performance properties and methods |
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