JPH01265583A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPH01265583A
JPH01265583A JP9316188A JP9316188A JPH01265583A JP H01265583 A JPH01265583 A JP H01265583A JP 9316188 A JP9316188 A JP 9316188A JP 9316188 A JP9316188 A JP 9316188A JP H01265583 A JPH01265583 A JP H01265583A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor laser
photodetector
laser device
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9316188A
Other languages
Japanese (ja)
Inventor
Kazunori Tsukiki
槻木 和徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9316188A priority Critical patent/JPH01265583A/en
Publication of JPH01265583A publication Critical patent/JPH01265583A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve a device of this design in a heat dissipating property by a method wherein a photodetector is formed independently of a substrate on which a semiconductor element is mounted, and the photodetector is fixed to the substrate through the intermediary of an optional waveguide means. CONSTITUTION:A semiconductor laser element 2 is fixed onto a part of a surface of a substrate 1 excellent in a thermal conductivity. A photodetector 7 is fixed onto another part of the surface of the substrate 1 through the intermediary of an optical waveguide means which conducts a monitoring ray emitted from the element 2. When the element 2 is turned ON to start operating, intrinsic laser rays 11 are projected from a laser rays projecting end face 5. A monitoring ray 12 is projected from a laser ray projecting end face 6, the ray 12 is made to be incident on a transparent conductive bonding agent 10 and detected as a waveguide light by a photodetector 8. By these processes, a substrate excellent in A thermal conductivity can be used, so that a device is improved in a heat dissipating property.

Description

【発明の詳細な説明】 以下の順序に従フて本発明を説明する。[Detailed description of the invention] The present invention will be described in the following order.

A、産業上の利用分野 B1発明の概要 C0従来技術「第3図」 D、発明が解決しようとする問題点 E1問題点を解決するための手段 F0作用 G、実施例[第1図、第2図] H6発明の効果 (A、産業上の利用分野) 本発明は半導体レーザ装置、特に半導体レーザ素子の光
出力をモニターするフォトデテクタを備えた半導体レー
ザ装置に関する。
A. Field of industrial application B1 Overview of the invention C0 Prior art "Fig. 3" D. Problem to be solved by the invention E1 Means for solving the problem F0 Effect G. Examples [Fig. 1, [Figure 2] H6 Effects of the Invention (A. Field of Industrial Application) The present invention relates to a semiconductor laser device, and particularly to a semiconductor laser device equipped with a photodetector that monitors the optical output of a semiconductor laser element.

(B、発明の概要) 本発明は、上記の半導体レーザ装置において、放熱性を
高めるため、 半導体レーザ素子を良熱伝導性基板にマウンティングす
ることとし、フォトデテクタを良熱伝導性基板上に光導
波手段を介して固定して半導体レーザ素子から出射され
るモニター光を光導波手段によってフォトデテクタへ導
くようにしたものである。
(B. Summary of the Invention) In the semiconductor laser device described above, the present invention includes mounting the semiconductor laser element on a substrate with good thermal conductivity in order to improve heat dissipation, and mounting a photodetector on the substrate with good thermal conductivity. Monitor light emitted from a semiconductor laser element fixed via a wave means is guided to a photodetector by an optical wave guide means.

(C,従来技術)[第3図] コンパクトディスクプレイヤー、レーザディスクプレイ
ヤー等の光ピツクアップに光源として用いられる半導体
レーザ装置は、特願昭62−72565において紹介し
たように、レーザ光を発生する半導体レーザ素子のほか
にそのモニター光の強さを一定に保つコントロールのた
めにレーザ光をモニターするフォトデテクタを備えてい
るのが普通である。
(C, Prior Art) [Figure 3] A semiconductor laser device used as a light source for optical pickup in compact disc players, laser disc players, etc. is a semiconductor laser device that generates laser light, as introduced in Japanese Patent Application No. 72565/1983. In addition to the laser element, it is usually equipped with a photodetector that monitors the laser light in order to control the intensity of the monitor light to be kept constant.

第3図はそのような半導体レーザ装置の従来例を示すも
のである。同図において、aはシリコンからなる半導体
基板、bは該半導体基板aの一部上に固着された半導体
レーザ素子、Cは該半導体レーザ素子すの活性層、dは
半導体レーザ素子すの本来のレーザ光、即ち、信号の読
み取りに使用するレーザ光を出射する端面、eはそれと
反対側の端面であるところのモニター光出射端面である
。fは半導体基板aの表面部に形成されたフォトダイオ
ードで、半導体レーザ素子すから出射されたモニター光
を受光する。
FIG. 3 shows a conventional example of such a semiconductor laser device. In the figure, a is a semiconductor substrate made of silicon, b is a semiconductor laser device fixed on a part of the semiconductor substrate a, C is an active layer of the semiconductor laser device, and d is an original layer of the semiconductor laser device. The end face e emits a laser beam, that is, the laser light used for signal reading, and e is the monitor light emitting end face which is the opposite end face. A photodiode f is formed on the surface of the semiconductor substrate a, and receives monitor light emitted from the semiconductor laser element.

(D、発明が解決しようとする問題点)第3図に示した
従来の半導体レーザ装置には放熱性が悪く、そのため半
導体レーザ素子の寿命が低下するという問題がある。と
いうのは、半導体レーザ素子すがマウントされる基板a
はシリコン半導体基板からなり銅Cu等に比較して熱伝
導性が悪いからである。
(D. Problems to be Solved by the Invention) The conventional semiconductor laser device shown in FIG. 3 has a problem of poor heat dissipation, which shortens the life of the semiconductor laser element. This is because the substrate a on which the semiconductor laser element is mounted is
This is because it is made of a silicon semiconductor substrate and has poor thermal conductivity compared to copper or the like.

本発明はこのような問題点を解決すべく為されたもので
あり、半導体レーザ素子の光出力をモニターするフォト
デテクタを備えた半導体レーザ装置の放熱性を高くする
ことを目的とする。
The present invention has been made to solve these problems, and an object of the present invention is to improve the heat dissipation performance of a semiconductor laser device equipped with a photodetector that monitors the optical output of a semiconductor laser element.

(E、問題点を解決するための手段) 本発明半導体レーザ装置は上記問題点を解決するため、
半導体レーザ素子を良熱伝導性基板にマウンティングす
ることとし、フォトデテクタを良熱伝導性基板上に光導
波手段を介して固定して半導体レーザ素子から出射され
るモニター光を光導波手段によってフォトデテクタへ導
くようにしたことを特徴とする。
(E. Means for Solving the Problems) In order to solve the above problems, the semiconductor laser device of the present invention has the following steps:
The semiconductor laser device is mounted on a substrate with good thermal conductivity, and a photodetector is fixed on the substrate with good thermal conductivity via an optical waveguide, and the monitor light emitted from the semiconductor laser device is detected by the photodetector using the optical waveguide. It is characterized by being designed to lead to.

(F、作用) 本発明半導体レーザ装置によれば、フォトデテクタを半
導体レーザ素子がマウントされる基板に形成するのでは
なく、基板と別個に形成し、光導波手段を介してフォト
デテクタを基板に固定するので、基板としてシリコン半
導体基板ではなくそれより熱伝導性の良いものを用いる
ことができる。従って、半導体レーザ装置の放熱性を良
くすることができる。
(F. Effect) According to the semiconductor laser device of the present invention, the photodetector is not formed on the substrate on which the semiconductor laser element is mounted, but is formed separately from the substrate, and the photodetector is attached to the substrate via the optical waveguide. Since it is fixed, a substrate with better thermal conductivity than a silicon semiconductor substrate can be used instead of a silicon semiconductor substrate. Therefore, the heat dissipation of the semiconductor laser device can be improved.

そして、半導体レーザ素子から出射されたレーザ光は上
記光導波手段を介してフォトデテクタへ導くことができ
るのでフォトデテクタにより支障なく半導体レーザ素子
の出力レーザ光をモニターすることができる。
Since the laser light emitted from the semiconductor laser element can be guided to the photodetector via the optical waveguide means, the output laser light of the semiconductor laser element can be monitored by the photodetector without any trouble.

(G、実施例)[第1図、第2図] 以下、本発明半導体レーザ装置を図示実施例に従って詳
細に説明する。
(G. Embodiment) [FIGS. 1 and 2] Hereinafter, the semiconductor laser device of the present invention will be described in detail according to the illustrated embodiment.

第1図及び第2図は本発明半導体レーザ装置の一つの実
施例を示すもので、第1図は斜視図、第2図は断面図で
ある。
1 and 2 show one embodiment of the semiconductor laser device of the present invention, with FIG. 1 being a perspective view and FIG. 2 being a sectional view.

1は例えば銅C’uからなる基板、2は該基板1の一部
分上に半田層3を介してマウンティングされた半導体レ
ーザ素子、4は活性層、5は本来のレーザ光を出射する
レーザ光出射端面、6はモニター光出射端面であり、該
モニター光出射端面6は基板1の中央部側を向き、レー
ザ光出射端面5は外側を向いている。
1 is a substrate made of, for example, copper C'u; 2 is a semiconductor laser element mounted on a portion of the substrate 1 via a solder layer 3; 4 is an active layer; and 5 is a laser beam emitting device that emits the original laser beam. The end face 6 is a monitor light emitting end face, the monitor light emitting end face 6 faces toward the center of the substrate 1, and the laser light emitting end face 5 faces outward.

7はフォトデテクタで、シリコン半導体基板自の表面部
にフォトダイオード9を形成してなり、受光面を下向き
にして透明導電性接着剤10により基板1に接着されて
いる。
A photodetector 7 has a photodiode 9 formed on the surface of a silicon semiconductor substrate, and is bonded to the substrate 1 with a transparent conductive adhesive 10 with its light-receiving surface facing downward.

この半導体レーザ装置は、半導体レーザ素子2が点灯状
態になるとレーザ光出射端面5から本来のレーザ光11
が出射され、レーザ光出射端面6からモニター光12が
出射され、該モニター光12が透明導電性接着剤10に
入射し導波光としてフォトデテクタ8により受光される
In this semiconductor laser device, when the semiconductor laser element 2 is turned on, the original laser beam 11 is emitted from the laser beam emitting end face 5.
is emitted, a monitor light 12 is emitted from the laser light emitting end face 6, the monitor light 12 enters the transparent conductive adhesive 10, and is received by the photodetector 8 as waveguide light.

この半導体レーザ装置は、基板1が銅Cuという熱伝導
性の非常に良い材料からなるので放熱性が良い。そして
、光導波手段2から出射されたモニター光12を透明導
電性接着剤10によりフォトデテクタ7に導光すること
により半導体レーザ素子2のモニターを支障なく行うこ
とができる。
This semiconductor laser device has good heat dissipation because the substrate 1 is made of copper, a material with very good thermal conductivity. By guiding the monitor light 12 emitted from the optical waveguide 2 to the photodetector 7 using the transparent conductive adhesive 10, the semiconductor laser device 2 can be monitored without any trouble.

尚、本実施例においては接着剤10が光導波手段として
の役割を果しているが、薄い光導波手段をフォトデテク
タの受光面に固定し、そしてその光導波手段を普通の接
着剤で基板1に固定するようにする等本発明は種々の態
様で実施することができる。
In this embodiment, the adhesive 10 plays the role of the optical waveguide, but the thin optical waveguide is fixed to the light receiving surface of the photodetector, and then the optical waveguide is attached to the substrate 1 with an ordinary adhesive. The present invention can be implemented in various ways, such as by being fixed.

(H,発明の効果) 以上に述べたように、本発明半導体レーザ装置は、良熱
伝導性基板の表面の一部分上に半導体レーザ素子が固定
され、他の部分上に上記半導体レーザ素子からのモニタ
ー光を導く光導波手段を介してフォトデテクタが固定さ
れたことを特徴とするものである。
(H, Effects of the Invention) As described above, in the semiconductor laser device of the present invention, the semiconductor laser element is fixed on a part of the surface of the substrate with good thermal conductivity, and the semiconductor laser element is fixed on the other part. This device is characterized in that a photodetector is fixed via an optical waveguide that guides monitor light.

従って、本発明半導体レーザ装置によれば、フォトデテ
クタを半導体レーザ素子がマウントされる基板と別個に
形成し、光導波手段を介してフォトデテクタを基板に固
定するので、基板としてシリコン半導体基板より熱伝導
性の良いものを用いることができる。従ワて、半導体レ
ーザ装置の放熱性を良くすることができる。
Therefore, according to the semiconductor laser device of the present invention, the photodetector is formed separately from the substrate on which the semiconductor laser element is mounted, and the photodetector is fixed to the substrate via the optical waveguide means. A material with good conductivity can be used. Accordingly, the heat dissipation of the semiconductor laser device can be improved.

そして、半導体レーザ素子から出射されたレーザ光は上
記光導波手段を介してフォトデテクタへ導くことができ
るのでフォトデテクタにより支障なく半導体レーザ素子
の出力をモニターすることができる。
Since the laser light emitted from the semiconductor laser element can be guided to the photodetector via the optical waveguide means, the output of the semiconductor laser element can be monitored by the photodetector without any trouble.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図及び第2図は本発明半導体レーザ装置の一つの実
施例を示すもので、第1図は斜視図、第2図は断面図、
第3図は半導体レーザ装置の従来例を示す斜視図である
。 符号の説明 1・・・良熱伝導性基板、 2・・・半導体レーザ素子、 7・・・フォトデテクタ、 10・・・光導波手段。 断面図 第2図
1 and 2 show one embodiment of the semiconductor laser device of the present invention, FIG. 1 is a perspective view, FIG. 2 is a sectional view,
FIG. 3 is a perspective view showing a conventional example of a semiconductor laser device. Explanation of symbols 1... Good thermal conductive substrate, 2... Semiconductor laser element, 7... Photodetector, 10... Optical waveguide means. Cross-sectional view Figure 2

Claims (1)

【特許請求の範囲】 良熱伝導性基板の表面の一部分上に半導体レーザ素子が
固定され、 上記良熱伝導性基板の表面の他の部分上に上記半導体レ
ーザ素子からのモニター光を導く光導波手段を介してフ
ォトデテクタが固定され、 たことを特徴とする半導体レーザ装置
[Claims] A semiconductor laser element is fixed on a part of the surface of a substrate with good thermal conductivity, and an optical waveguide guides monitor light from the semiconductor laser element onto another part of the surface of the substrate with good thermal conductivity. A semiconductor laser device characterized in that a photodetector is fixed via a means.
JP9316188A 1988-04-15 1988-04-15 Semiconductor laser device Pending JPH01265583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9316188A JPH01265583A (en) 1988-04-15 1988-04-15 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9316188A JPH01265583A (en) 1988-04-15 1988-04-15 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPH01265583A true JPH01265583A (en) 1989-10-23

Family

ID=14074837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9316188A Pending JPH01265583A (en) 1988-04-15 1988-04-15 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH01265583A (en)

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