JPH01260833A - Vapor growth method of insulating film - Google Patents
Vapor growth method of insulating filmInfo
- Publication number
- JPH01260833A JPH01260833A JP8880688A JP8880688A JPH01260833A JP H01260833 A JPH01260833 A JP H01260833A JP 8880688 A JP8880688 A JP 8880688A JP 8880688 A JP8880688 A JP 8880688A JP H01260833 A JPH01260833 A JP H01260833A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- reaction
- oxynitride
- gas
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000012495 reaction gas Substances 0.000 claims abstract description 17
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 abstract description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000007789 gas Substances 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 230000005587 bubbling Effects 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910020175 SiOH Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
オキシナイトライド絶縁膜を化学気相成長させる新規方
法に関し、
特に、キャパシタの小型、高容量化による半導体装置の
高集積化を目的とし、
オキシナイトライドにてなる絶縁膜を、有機オキシシラ
ンとアンモニアとの混合反応ガスを使用し、化学気相成
長により成長させることを特徴とし構成する。[Detailed Description of the Invention] [Summary] This invention relates to a new method for chemical vapor deposition of an oxynitride insulating film, particularly for the purpose of increasing the integration of semiconductor devices by making capacitors smaller and increasing their capacitance. The insulating film is grown by chemical vapor deposition using a mixed reaction gas of organic oxysilane and ammonia.
本発明は絶縁膜の気相成長方法、特に、半導体装置のキ
ャパシタ絶縁膜をオキシナイトライド（Ｓｉｘｔｙ Ｎ
Ｚ）にて形成する新規方法に関する。The present invention relates to a method for vapor phase growth of an insulating film, and in particular, to a method for growing a capacitor insulating film of a semiconductor device using oxynitride (SixtyN).
Z).
近年の半導体装置は、高集積化、構成の微細化に伴って
、小面積で高容量のキャパシタを構成するため、その絶
縁膜に一層の薄膜化が要求されるようになった。これら
のため、リーク電流が小さく絶縁性に優れ、誘電率の大
きい絶縁膜を再現性良く成長する必要がある。2. Description of the Related Art In recent years, semiconductor devices have become highly integrated and have finer structures, and in order to form capacitors with small areas and high capacitance, the insulating films thereof are required to be thinner. For these reasons, it is necessary to grow an insulating film with low leakage current, excellent insulation properties, and high dielectric constant with good reproducibility.
第２図はＭＯＳメモリ装置の一部分を拡大した断面図で
ある。FIG. 2 is an enlarged cross-sectional view of a portion of the MOS memory device.
第２図において、１はシリコンの単結晶基板、２は熱酸
化によるＳｉ ＯＨ膜、３はゲート電極、４は化学気相
成長させたＳｉ ＯＨ膜であり、キャパシタ絶縁膜５は
、ポリシリコン膜６と７の間に形成される。In FIG. 2, 1 is a silicon single crystal substrate, 2 is a thermally oxidized SiOH film, 3 is a gate electrode, 4 is a chemical vapor grown SiOH film, and the capacitor insulating film 5 is a polysilicon film. Formed between 6 and 7.
従来、半導体装置のキャパシタ絶縁膜５は、シランとア
ンモニアとの混合ガスを反応ガスとし、化学気相成長に
よって成長しており、
３ＳｉＨ４＋４ＮＨｓ→５ｉｓＮａ ＋１２Ｈｚの反応
を利用し、ポリシリコン膜６の上に成長させた絶縁膜（
窒化シリコン膜： Ｓｉ、Ｎ、膜）５は、厚さが数百人
程度であった。ところが、半導体装置の高集積化および
素子の微細化に伴って、キャパシタの面積が小さくなる
と、その絶縁膜５は薄くなり、リーク電流が比較的大き
いことで知られる５ｉｓＮａ膜は、絶縁性に問題が生じ
る。Conventionally, the capacitor insulating film 5 of a semiconductor device has been grown by chemical vapor deposition using a mixed gas of silane and ammonia as a reaction gas. The grown insulating film (
The silicon nitride film (Si, N, film) 5 was about several hundred thick. However, as the area of the capacitor becomes smaller due to higher integration of semiconductor devices and miniaturization of elements, the insulating film 5 becomes thinner, and the 5isNa film, which is known for its relatively large leakage current, has problems with insulation. occurs.
そこで、５ｉｓＮ４膜と比較して誘電率がほぼ同等であ
り、リーク電流の小さいオキシナイトライドを、キャパ
シタの絶縁膜５に利用するようになったが、オキシナイ
トライドにてなる従来の絶縁膜５は、シラン（ＳｉＨ４
）とアンモニア（Ｎｌ（、）と酸化窒素（ＮＺ Ｏ）の
混合ガスを反応ガスに使用し、化学気相成長法によって
成長させていた。Therefore, oxynitride, which has almost the same dielectric constant as the 5isN4 film and has a small leakage current, has been used for the insulating film 5 of the capacitor, but the conventional insulating film 5 made of oxynitride is silane (SiH4
), ammonia (Nl), and nitrogen oxide (NZ O) as the reaction gas, and was grown by chemical vapor deposition.
第３図は従来のキャパシタ絶縁膜を成長させる化学気相
成長装置（ＣＶＤ装置）の概略を示す側面図である。FIG. 3 is a side view schematically showing a conventional chemical vapor deposition apparatus (CVD apparatus) for growing a capacitor insulating film.
第３図において、ヒータ１１によって所定温度に加熱さ
れる反応管１２は、基板ホルダ１３に搭載された多数の
シリコン基板（ウェーハ）ｌを収容し、一端に反応ガス
１４の供給管１５を接続し、他端の排気管１６が排気装
置に接続される。In FIG. 3, a reaction tube 12 heated to a predetermined temperature by a heater 11 accommodates a large number of silicon substrates (wafers) l mounted on a substrate holder 13, and has one end connected to a supply tube 15 for a reaction gas 14. , the exhaust pipe 16 at the other end is connected to an exhaust device.
基板１に成長させる絶縁膜がＳｉ、Ｎ４であるとき、Ｓ
ｉＨ，とＮＨ，を混合した反応ガス１４は、バルブ１８
を開き供給管１５より反応管１２に供給される。他方、
成長させる絶縁膜がオキシナイトライドであるときは、
反応ガス１４にＳＬＨ，とＮＨ３およびＮ、Ｏの混合ガ
スを使用することになる。When the insulating film grown on the substrate 1 is Si, N4, S
The reaction gas 14, which is a mixture of iH and NH, is supplied to the valve 18.
is opened and supplied to the reaction tube 12 from the supply tube 15. On the other hand,
When the insulating film to be grown is oxynitride,
A mixed gas of SLH, NH3, N, and O is used as the reaction gas 14.
従来方法によって成長されるオキシナイトライドの絶縁
膜は、その成長に要する酸素原子が微量であるため、Ｓ
ｉＨ，およびＮＨ３に混合するＮ、Ｏの量をコントロー
ルすることが困難であり、誘電率の再現性が悪いという
問題点があった。Oxynitride insulating films grown by conventional methods require only a small amount of oxygen atoms for growth, so S
It is difficult to control the amounts of N and O mixed into iH and NH3, and there is a problem in that the reproducibility of the dielectric constant is poor.
本発明は前記問題点を除去し、再現性よくオキシナイト
ライドの絶縁膜を成長せしめることによって、例えば半
導体装置に形成されるキャパシタの小型、高容量化を実
現し、集積化の高い半導体装置を提供することを目的と
する。The present invention eliminates the above-mentioned problems and grows an oxynitride insulating film with good reproducibility, thereby realizing the miniaturization and high capacity of capacitors formed in semiconductor devices, for example, and realizing highly integrated semiconductor devices. The purpose is to provide.
本発明は第１図によれば、オキシナイトライドにてなる
絶縁膜を、テトラエトキシシラン等の有機オキシシラン
２２とアンモニア３０との混合反応ガス１４を使用し、
化学気相成長により成長させることを特徴とする絶縁膜
の気相成長方法である。According to FIG. 1, the present invention uses an insulating film made of oxynitride using a mixed reaction gas 14 of an organic oxysilane 22 such as tetraethoxysilane and ammonia 30,
This is a method of vapor phase growth of an insulating film characterized by growth by chemical vapor deposition.
上記手段によれば、有機オキシシランとアンモニアとの
混合ガスを反応ガスとして使用することより、化学気相
成長装置の反応管内におけるシリコン分圧と酸素分圧と
の比は、シリコンおよび酸素が有機オキシシランの分解
によって供給されるため常時一定となり、安定条件の下
でオキシナイトライドが成長することになる。従って、
該オキシナイトライドを絶縁膜としたキャパシタは、ロ
フト間で組成比等の膜質のばらつきが少なくて再現性に
優れ、小型、高容量化設計になるキャパシタの量産が高
品質に可能となり、半導体装置の高集積化に寄与する。According to the above means, since a mixed gas of organic oxysilane and ammonia is used as a reaction gas, the ratio of the silicon partial pressure to the oxygen partial pressure in the reaction tube of the chemical vapor deposition apparatus is such that silicon and oxygen are Since it is supplied by the decomposition of , it remains constant at all times, and oxynitride grows under stable conditions. Therefore,
Capacitors using this oxynitride as an insulating film have excellent reproducibility with little variation in film quality such as composition ratio between lofts, making it possible to mass-produce high-quality capacitors with compact and high-capacity designs, and improve semiconductor devices. Contributes to high integration.
以下に、図面を用いて本発明によるキャパシタ絶縁膜の
形成方法を説明する。A method for forming a capacitor insulating film according to the present invention will be described below with reference to the drawings.
第１図は本発明方法の一実施例に係わる化学気相成長装
置の概略を示す側面図である。前出図と共通部分に同一
符号を使用した第１図において、ヒータ１１によって所
定温度に加熱される反応管１２は、基板ホルダ１３に搭
載された多数のシリコン基板１を収容し、一端に接続し
た反応ガス供給管１５はＮＨ３３０の供給源およびバブ
リング装置２１に接続し、他端の排気管１６が排気装置
に接続される。FIG. 1 is a side view schematically showing a chemical vapor deposition apparatus according to an embodiment of the method of the present invention. In FIG. 1, in which the same reference numerals are used for parts common to the previous figure, a reaction tube 12 heated to a predetermined temperature by a heater 11 accommodates a large number of silicon substrates 1 mounted on a substrate holder 13, and is connected to one end. The reactant gas supply pipe 15 is connected to a supply source of NH330 and a bubbling device 21, and the exhaust pipe 16 at the other end is connected to an exhaust device.
バブリング装置２１は、有機オキシシラン例えばテトラ
エトキシシラン（Ｓｔ（ＯＣｚＨｓ） ＊） ２２を収
容する石英容器２３と、５ｔ（ＯＣＪｓ） ＜２２にキ
ャリアガス例えば窒素ガス（Ｎｚ）２４をバブリングさ
せるパブリング管２５と、Ｓｉ （ＯＣｚＨｓ） ４２
２を一定温度に維持するするため石英容器２３を収容す
る恒温槽３１を具え、５ｉ（ＣＪｓ）４２２とＮ２２４
の混合ガス２６は、石英管２７を介して反応ガス供給管
１５に接続される。The bubbling device 21 includes a quartz container 23 containing an organic oxysilane such as tetraethoxysilane (St(OCzHs)*) 22, and a bubbling tube 25 for bubbling a carrier gas such as nitrogen gas (Nz) 24 into the 5t(OCJs)<22. , Si (OCzHs) 42
5i (CJs) 422 and N224.
The mixed gas 26 is connected to the reaction gas supply pipe 15 via a quartz tube 27.
このような装置において、パルプ２８と２９を開きＮＨ
ｚ３０と混合ガス２６とを適当に混合させた反応ガス１
４を、０．５〜１．５ Ｔｏｒｒに減圧し７５０〜８０
０℃に加熱した反応管１２に供給すると、Ｘ−３ｉ（Ｏ
Ｃｚ Ｈｓ）ｔ ＋ Ｚ−ＮＨｓ−＋５ｉｘＯｙ Ｎｚ
＋４ｘ−Ｃｚ Ｈａ ＋（４−ｙ） Ｈｚ Ｏ＋ （
ｙ−２ｘ ＋３／２・ｚ ） Ｈｔの反応によって、Ｓ
１ｘｏｙ Ｎｚ（オキシナイトライド）の膜が基板表
面に成長する。In such a device, pulps 28 and 29 are opened and NH
Reaction gas 1 made by appropriately mixing z30 and mixed gas 26
4 to 0.5 to 1.5 Torr and 750 to 80
When supplied to the reaction tube 12 heated to 0°C, X-3i(O
Cz Hs)t + Z-NHs-+5ixOy Nz
+4x-Cz Ha +(4-y) Hz O+ (
y-2x +3/2・z) By the reaction of Ht, S
A film of 1xoy Nz (oxynitride) is grown on the substrate surface.
なお、前記実施例では有機オキシシランとして珪酸エチ
ルを使用したが、本発明方法は他の有機オキシシラン、
例えば
テトラメトキシシラン ５ｔ（ＯＣＨｉ）ｔエチルトリ
エトキシシラン
（Ｃｚ Ｈｓ）Ｓｔ（ＯＣｚ Ｈｓ）ｘアミルトリエト
キシシラン
Ｃｓ ＨｚＳｉ（ＯＣｚ Ｈｓｈ
ビニールトリエトキシシラン
ＣＨｚ＝ＣＨＳ ｉ（ＯＣｔ Ｈｓ）＋フェノールトリ
エトキシシラン
Ｃ６Ｈ５Ｓ ｉ（ＯＣｔ Ｈａ）ツ
ジメチルダイオキシシラン
（ＣＨ３） ｚ Ｓ ｉ（ＯＣｚ Ｈ５） ！ジフェニ
ルダイオキシシラン
（Ｃ６Ｈｓ）ｚ ５ｉ（ＯＣｚ Ｈｓ）ｚが使用できる
と共に、有機オキシシランのバブリング用のキャリアガ
スとして前記反応に関わらず安定なもの、例えばアルゴ
ンガスやヘリウムガス等を使用可能であり、有機オキシ
シランの蒸気はバブリングなしに可能であることを付記
する。Note that in the above examples, ethyl silicate was used as the organic oxysilane, but the method of the present invention can be performed using other organic oxysilanes,
For example, tetramethoxysilane 5t (OCHi) t ethyltriethoxysilane (Cz Hs) St (OCz Hs) i(OCt Ha) dimethyl dioxysilane (CH3) z S i (OCz H5) !Diphenyl dioxysilane (C6Hs) z 5i (OCz Hs) z can be used and can also be used in the above reaction as a carrier gas for bubbling of organic oxysilane. Regardless, it is possible to use a stable gas such as argon gas or helium gas, and it should be noted that organic oxysilane vapor can be used without bubbling.
以上説明したように本発明方法によれば、有機オキシシ
ランとアンモニアとの混合ガスを反応ガスとした化学気
相成長によって成長させたオキシナイトライドは、反応
管内におけるシリコン分圧と酸素分圧との比が常時一定
となり、安定条件の下で成長することになる。従って、
該オキシナイトライドを絶縁膜としたキャパシタは、ロ
ット間における組成比等の膜質のばらつきが少なくて再
現性に優れ、小型、高容量化設計になるキャパシタを量
産可能とし、半導体装置の高集積化等に寄与した効果が
ある。As explained above, according to the method of the present invention, oxynitride grown by chemical vapor deposition using a mixed gas of organic oxysilane and ammonia as a reaction gas is produced by the reaction between the silicon partial pressure and the oxygen partial pressure in the reaction tube. The ratio remains constant and growth occurs under stable conditions. Therefore,
Capacitors using this oxynitride as an insulating film have excellent reproducibility with little variation in film quality such as composition ratio between lots, making it possible to mass produce capacitors designed to be smaller and have higher capacitance, and contributing to higher integration of semiconductor devices. There is an effect that contributes to etc.
第１図は本発明方法の一実施例に係わる化学気相成長装
置の概略側面図、
第２図はＭＯＳメモリ装置の一部分、
第３図は従来の化学気相成長装置の概略側面図、である
。
図中において、
１ は基キ反、
５はキャパシタ１色縁膜、
６．７はポリシリコン膜、
１２は反応管、
１４は混合反応ガス、
２２は有機オキシシラン、
３０はアンモニアガス、
を示す。
へイＯ５〆（巳１）Ａ畳１１ の−台すりうゝ第ｚｍ
イ追釆６リイ巴り町へ本目ｈ＼長１し置の不良し田各側
面Ｄ］第３図FIG. 1 is a schematic side view of a chemical vapor deposition apparatus according to an embodiment of the method of the present invention, FIG. 2 is a part of a MOS memory device, and FIG. 3 is a schematic side view of a conventional chemical vapor deposition apparatus. be. In the figure, 1 is a base film, 5 is a capacitor single color film, 6.7 is a polysilicon film, 12 is a reaction tube, 14 is a mixed reaction gas, 22 is an organic oxysilane, and 30 is an ammonia gas. Hei O5 〆 (Snake 1) A tatami 11 -Ochi -Ruri Uto ZM Ichi 6 Rey Tomo -cho, the main H＼
Claims (1)
キシシラン（２２）とアンモニア（３０）との混合反応
ガス（１４）を使用し、化学気相成長により成長させる
ことを特徴とする絶縁膜の気相成長方法。An insulating film (5) made of oxynitride is grown by chemical vapor deposition using a mixed reaction gas (14) of organic oxysilane (22) and ammonia (30). Vapor phase growth method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8880688A JPH01260833A (en) | 1988-04-11 | 1988-04-11 | Vapor growth method of insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8880688A JPH01260833A (en) | 1988-04-11 | 1988-04-11 | Vapor growth method of insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01260833A true JPH01260833A (en) | 1989-10-18 |
Family
ID=13953127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8880688A Pending JPH01260833A (en) | 1988-04-11 | 1988-04-11 | Vapor growth method of insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01260833A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04162428A (en) * | 1990-10-24 | 1992-06-05 | Nec Corp | Manufacture of semiconductor device |
| US5362686A (en) * | 1990-06-05 | 1994-11-08 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method for protective silicon oxynitride film |
| EP1470264A1 (en) * | 2001-12-28 | 2004-10-27 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure cvd |
-
1988
- 1988-04-11 JP JP8880688A patent/JPH01260833A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362686A (en) * | 1990-06-05 | 1994-11-08 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing method for protective silicon oxynitride film |
| JPH04162428A (en) * | 1990-10-24 | 1992-06-05 | Nec Corp | Manufacture of semiconductor device |
| EP1470264A1 (en) * | 2001-12-28 | 2004-10-27 | Applied Materials, Inc. | Methods for silicon oxide and oxynitride deposition using single wafer low pressure cvd |
| EP1470264A4 (en) * | 2001-12-28 | 2007-05-16 | Applied Materials Inc | Methods for silicon oxide and oxynitride deposition using single wafer low pressure cvd |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI274790B (en) | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition | |
| EP0010910B1 (en) | Method for forming an insulating film layer on a semiconductor substrate surface | |
| George et al. | Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB… binary reaction sequence chemistry | |
| US5032545A (en) | Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby | |
| US5484749A (en) | Manufacturing method of semiconductor device | |
| US5290736A (en) | Method of forming interlayer-insulating film using ozone and organic silanes at a pressure above atmospheric | |
| EP0605205B1 (en) | Method for chemical vapor deposition and apparatus therefor | |
| US4708884A (en) | Low temperature deposition of silicon oxides for device fabrication | |
| IE914500A1 (en) | Process for producing a smooth, polycrystalline silicon¹layer doped with arsenic for highly integrated circuits | |
| JP2005534179A (en) | Low temperature dielectric deposition using aminosilane and ozone. | |
| US5324539A (en) | Method for forming CVD thin glass films | |
| EP0212691A1 (en) | Low temperature chemical vapor deposition of silicon dioxide films | |
| JP2001332550A (en) | Semiconductor device and its manufacturing method | |
| JPH01260833A (en) | Vapor growth method of insulating film | |
| JP2004288979A (en) | Method for forming insulating film | |
| JP3836553B2 (en) | Method for manufacturing silicon insulating film | |
| KR100200888B1 (en) | Method of forming an inter-layer insulating film | |
| US3843398A (en) | Catalytic process for depositing nitride films | |
| WO2009134080A2 (en) | Method for depositing polysilicon thin film with ultra-fine crystal grains | |
| SE427399B (en) | COATING COMPOSITION PREFERRED INTENDED FOR SEMICONDUCTORS AS WELL AS PREPARING THE COMPOSITION | |
| KR20050018641A (en) | Low temperature dielectric deposition using aminosilane and ozone | |
| KR100341059B1 (en) | A Method for Forming Poly-Crystalline Silicon Thin Film | |
| JP2890698B2 (en) | Method of forming silicon nitride film | |
| KR101046757B1 (en) | Capacitor of semiconductor device and manufacturing method thereof | |
| JPH06342786A (en) | Forming method of insulating film and vacuum cvd device |