JPH01252667A - Antistatic composition - Google Patents
Antistatic compositionInfo
- Publication number
- JPH01252667A JPH01252667A JP63080455A JP8045588A JPH01252667A JP H01252667 A JPH01252667 A JP H01252667A JP 63080455 A JP63080455 A JP 63080455A JP 8045588 A JP8045588 A JP 8045588A JP H01252667 A JPH01252667 A JP H01252667A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- antistatic
- semiconductor device
- composition
- resins
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 229920005989 resin Polymers 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims abstract description 25
- 239000002216 antistatic agent Substances 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- -1 acryl Chemical group 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 abstract description 10
- 230000005611 electricity Effects 0.000 abstract description 5
- 230000003068 static effect Effects 0.000 abstract description 5
- 238000010894 electron beam technology Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 abstract description 2
- 239000000835 fiber Substances 0.000 abstract description 2
- 239000000123 paper Substances 0.000 abstract description 2
- 239000004033 plastic Substances 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 239000009719 polyimide resin Substances 0.000 abstract description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 abstract description 2
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 abstract description 2
- 229920005992 thermoplastic resin Polymers 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 abstract 1
- 229920006305 unsaturated polyester Polymers 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 102000029797 Prion Human genes 0.000 description 3
- 108091000054 Prion Proteins 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229960003237 betaine Drugs 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Paints Or Removers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、半導体装置の封止樹脂表面に被覆形成する半
導体装置被覆用の帯電防止性組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an antistatic composition for coating a semiconductor device, which is formed on the surface of a sealing resin of a semiconductor device.
（従来の技術）
従来、樹脂封止型半導体装置は、第２図に示したように
、半導体素子１２が接着剤１６を介してリードフレーム
の半導体素子搭載部１１に裕載され、半導体素子１２の
電極とリードフレームのリード端子１３とがボンディン
グワイヤー１４によって電気的に接続され、半４体素子
１２と、ボンディングワイヤー１４と、リード端子１３
の一部とはトランスファー成形をした封止樹脂１５によ
って、半導体素子１２を外部雰囲気から保護するような
＠造が採られている。(Prior Art) Conventionally, in a resin-sealed semiconductor device, as shown in FIG. The electrode and the lead terminal 13 of the lead frame are electrically connected by the bonding wire 14, and the half-quad element 12, the bonding wire 14, and the lead terminal 13
A structure is adopted in which the semiconductor element 12 is protected from the external atmosphere by a sealing resin 15 that has been transfer molded.
（発明が解決しようとする課題）
このような構造の樹脂封止型半導体装置は、静電気等の
外部からの微弱電流によって半導体装置内部の半導体素
子が破壊されるという欠点がある。(Problems to be Solved by the Invention) A resin-sealed semiconductor device having such a structure has a drawback that a semiconductor element inside the semiconductor device is destroyed by a weak electric current from the outside such as static electricity.
また、トランスファー成形で封止した半導体装置表面は
、成形の後工程で傷がつき商品価値が低下するなどの欠
点があった。Furthermore, the surface of a semiconductor device sealed by transfer molding has the disadvantage that it is damaged in the post-molding process, reducing its commercial value.
本発明は上記の欠点を解消するためになされたもので、
静電気等の外部からの微弱電流によっても半導体素子が
破壊されずに、かつ半導体製造の後半工程において、傷
がつき商品価値が低下することのないような半導体装置
被覆用の帯電防止性組成物を提供しようとするものであ
る。The present invention has been made to solve the above-mentioned drawbacks.
To develop an antistatic composition for coating semiconductor devices that will not destroy semiconductor elements even by weak external currents such as static electricity, and will not cause scratches and decrease in commercial value in the later stages of semiconductor manufacturing. This is what we are trying to provide.
［発明の構成］
（課題を解決するための手段）
本発明者らは、上記の欠点を解決しようと種々検討を行
った結果、帯電防止剤を配合した樹脂組成物を被覆すれ
ば、上記目的が達成されることを見いだし、本発明を完
成させたものである。 すなわち、本発明は、
有機樹脂１００重量部に対し、帯電防止剤０．１〜２０
重量部配合したことを特徴とする半導体用の帯電防止性
組成物である。[Structure of the Invention] (Means for Solving the Problems) As a result of various studies in an attempt to solve the above-mentioned drawbacks, the present inventors found that the above-mentioned objectives can be achieved by coating with a resin composition containing an antistatic agent. The present invention has been completed by discovering that the following can be achieved. That is, in the present invention, 0.1 to 20 parts of the antistatic agent is added to 100 parts by weight of the organic resin.
This is an antistatic composition for semiconductors, characterized in that it contains part by weight of the antistatic composition.
本発明に用いる有機樹脂としては、エポキシ樹脂、アク
リル樹脂、不飽和ポリエステル樹脂、エポキシアクリレ
ート樹脂、ポリイミド樹脂等の熱又は電子線によって硬
化する樹脂やポリフェニレンサルファイド樹脂等の耐熱
性の高い熱可塑性樹脂等が挙げられ、これらは単独もし
くは２種以上混合して使用することができる。 熱硬化
の場合Ｇ二角虫媒としてイミダゾール、メラミン、パー
オキサイド等を使用することができるが、用いるベース
樹脂の種類によって触媒を選択することが必要である。Examples of organic resins used in the present invention include resins that are cured by heat or electron beams such as epoxy resins, acrylic resins, unsaturated polyester resins, epoxy acrylate resins, and polyimide resins, and thermoplastic resins with high heat resistance such as polyphenylene sulfide resins. These can be used alone or in a mixture of two or more. In the case of thermal curing, imidazole, melamine, peroxide, etc. can be used as the G dichotoxin medium, but it is necessary to select the catalyst depending on the type of base resin used.
同様に電子線（光）で硬化する場合の触媒としては、
２−エチルアントラキノン、アセトフェノン、ベンゾイ
ンメチルエーテル、ホスホニウム塩系等を、使用するベ
ース樹脂によって選択することが必要である。Similarly, as a catalyst for curing with electron beam (light),
It is necessary to select 2-ethylanthraquinone, acetophenone, benzoin methyl ether, phosphonium salts, etc. depending on the base resin used.
本発明に用いる帯電防止剤としては、従来、プラスチッ
ク、繊維、紙等に使用されているものをそのまま使用す
ることができ、特に限定されるものではない。 帯電防
止剤としては、ポリオキシエチレンアルキルアミン、ポ
リオキシエチレンアルキルアミド、ポリオキシエチレン
アルキルエーテル、ポリオキシエチレンアルキルフェニ
ルエーテル、グリセリン脂肪酸エステル、ソルビタン脂
肪酸エステル等の非イオン系の帯電防止剤、アルキルス
ルホネート、アルキルベンゼンスルホネート、アルキル
サルフェート、アルキルホスフェート等のアニオン系の
帯電防止剤、第４級アンモニウムクロライド、第４級ア
ンモニウムサルフェート、第４級アンモニウムナイトレ
ート等のカチオン系の帯電防止剤、アルキルベタイン型
、アルキルイミダシリン型、アルキルアラニン型等の両
性系の帯電防止剤、ポリビニルベンジル型カチオン、ポ
リアクリル酸型カチオン等の導電性樹脂帯電防止剤等が
挙げられる。 これらのうち工業的に生産されている帯
電防止剤としては、エレクトロストリッパーＮ、エレク
トロストリッパーＫ、アルヒトール２４Ｂ（花王アトラ
ス社製、商品名）、デートロンＮ、ナイスポールＴＦ−
２７、ナイスポールＴＦ−５３（日華化学工業社製、商
品名）、プリオンに−５、プリオンＡ−０１，プリオン
Ａ−１６０（竹本油脂社製、商品名） 、 Ｔｅｘｎｏ
ｌＲ２、Ｎｅｗｃｏ１２０、Ｎｅｗｃｏｌ ４０、Ｎｅ
ｖｃｏｌｌｏｏｏＦＣＰ＜日本乳化剤社製、商品名）、
ニューニレガンＡ Ｓ Ｋ ’（日本油脂社製、商品名
）等が挙げられ、これらは単独もしくは２種以上混合し
て使用することができる。 帯電防止剤の配合割合は、
有機樹脂１００重量部に対して０．１〜２０重量部を配
合する。 より好ましくは、０．２〜１０重量部である
。 帯電防止剤の配合割合が０，１重量部未満では十分
な帯電防止効果を得ることができず、また２０重量部を
超えると有機樹脂の反応性を低下させ好ましくない。As the antistatic agent used in the present invention, those conventionally used for plastics, fibers, paper, etc. can be used as they are, and are not particularly limited. Examples of antistatic agents include nonionic antistatic agents such as polyoxyethylene alkylamine, polyoxyethylene alkylamide, polyoxyethylene alkyl ether, polyoxyethylene alkyl phenyl ether, glycerin fatty acid ester, sorbitan fatty acid ester, and alkyl sulfonates. , anionic antistatic agents such as alkylbenzene sulfonate, alkyl sulfate, alkyl phosphate, cationic antistatic agents such as quaternary ammonium chloride, quaternary ammonium sulfate, quaternary ammonium nitrate, alkyl betaine type, alkyl Examples include amphoteric antistatic agents such as imidacilline type and alkylalanine type, and conductive resin antistatic agents such as polyvinylbenzyl type cation and polyacrylic acid type cation. Among these, industrially produced antistatic agents include Electrostripper N, Electrostripper K, Alhitol 24B (manufactured by Kao Atlas Co., Ltd., trade name), Daytron N, Nicepol TF-
27, Nicepol TF-53 (manufactured by Nicca Chemical Industry Co., Ltd., trade name), Prion Ni-5, Prion A-01, Prion A-160 (manufactured by Takemoto Yushi Co., Ltd., trade name), Texno
lR2, Newco120, Newcol 40, Ne
vcolloooFCP <manufactured by Nippon Nyukazai Co., Ltd., trade name),
New Niregan ASK' (manufactured by Nippon Oil & Fats Co., Ltd., trade name) and the like may be used, and these may be used alone or in a mixture of two or more. The blending ratio of antistatic agent is
It is blended in an amount of 0.1 to 20 parts by weight per 100 parts by weight of the organic resin. More preferably, it is 0.2 to 10 parts by weight. If the proportion of the antistatic agent is less than 0.1 parts by weight, a sufficient antistatic effect cannot be obtained, and if it exceeds 20 parts by weight, the reactivity of the organic resin is undesirably reduced.
本発明の帯電防止性組成物は粘度調整用とじて各種の溶
剤を使用することができる。 例えば、ブチルセロソル
ブ、エチルセロソルブ、ブチルセロソルブアセテート、
ブチルカルピトールアセテート、ブチルカルピトール、
Ｎ−メチルピロリドン等が挙げられ、これらは単独もし
くは２種以上混合して使用することができる。 また、
無ン容剤型にするには、使用するベース樹脂に応じてモ
ノマーを選定使用することができる。Various solvents can be used in the antistatic composition of the present invention to adjust the viscosity. For example, butyl cellosolve, ethyl cellosolve, butyl cellosolve acetate,
Butyl carpitol acetate, butyl carpitol,
Examples include N-methylpyrrolidone, which can be used alone or in combination of two or more. Also,
In order to make it into a containerless type, monomers can be selected and used depending on the base resin used.
さらに、本発明の主旨に反しない限度において、必要に
応じて組成物の作業性を調整するために、シリカ粉末、
炭酸カルシウム等の無機フィラーを添加配合することも
できる。Furthermore, within the scope of the gist of the present invention, silica powder,
Inorganic fillers such as calcium carbonate may also be added.
本発明の帯電防止性組成物は、以上の前述した各成分を
配合し、デイスパー等によって均一に分散して容易に製
造することができる。 こうして得られた組成物をスク
リーン、ロールコータ−等によって塗布した後、数秒か
ら数時間熱又は電子線によって硬化されることができる
が、熱硬化では１５０°Ｃで１時間オーブン硬化、電子
線では８０Ｗ／Ｃ１ｌ、 １〜３灯で１０〜２０秒紫
外線硬化することが好ましい。The antistatic composition of the present invention can be easily produced by blending the above-mentioned components and uniformly dispersing them using a disper or the like. After applying the composition obtained in this way using a screen, roll coater, etc., it can be cured by heat or electron beam for several seconds to several hours. It is preferable to cure with ultraviolet light for 10 to 20 seconds at 80 W/Cl and 1 to 3 lamps.
（作用）
半導体装置に帯電防止性組成物を被覆したことによって
、帯電防止効果によってゴミ等の付着や静電気から半導
体素子を保護することができるし、また封止後の損傷を
防止することができる。(Function) By coating the semiconductor device with the antistatic composition, the antistatic effect can protect the semiconductor element from adhesion of dust and static electricity, and also prevent damage after sealing. .
（実施例） 次に本発明を実施例によって説明する。(Example) Next, the present invention will be explained by examples.
実施例 １
エポキシ樹脂９５重量部、硬化触媒イミダゾール５重量
部、帯電防止剤ニューニレガンＡＳＫ （日本油脂社製
、商品名）１重量部、およびシリカ粉末１０重量部をデ
イスパーによって分散させて帯電防止性組成物を製造し
た。 この組成物を第１図に示したように樹脂封止型半
導体装置の封止樹脂表面に塗布硬化させた。 この樹脂
封止型半導体装置は、半導体素子２が接着剤７を介して
リードフレーム搭載部１に搭載され、リードフレームの
リード端子３と電極とがボンディングワイヤー４で接続
され、それらは封止樹脂５によって封止されでいる。
封止樹脂５の表面に帯電防止性組成物６が被覆されてい
る。 この樹脂封止型半導体装置について、表面抵抗値
による帯電防止効果および封止後の損傷試験を行ったの
で、その結果を第１表に示した。 本発明の組成物を塗
布した半導体装置は、帯電防止効果がよく、損傷もなく
、本発明の効果が確認できた。Example 1 An antistatic composition was prepared by dispersing 95 parts by weight of an epoxy resin, 5 parts by weight of a curing catalyst imidazole, 1 part by weight of an antistatic agent New Nilegan ASK (manufactured by NOF Corporation, trade name), and 10 parts by weight of silica powder. manufactured something. This composition was applied and cured on the surface of the encapsulating resin of a resin-encapsulated semiconductor device as shown in FIG. In this resin-sealed semiconductor device, a semiconductor element 2 is mounted on a lead frame mounting portion 1 via an adhesive 7, and lead terminals 3 and electrodes of the lead frame are connected with bonding wires 4, and they are bonded to the encapsulating resin. It is sealed by 5.
The surface of the sealing resin 5 is coated with an antistatic composition 6. This resin-sealed semiconductor device was tested for antistatic effect based on surface resistance value and damage test after sealing, and the results are shown in Table 1. The semiconductor device coated with the composition of the present invention had a good antistatic effect and was not damaged, confirming the effect of the present invention.
実施例 ２〜５
第１表に示した組成によって実施例１と同様にして帯電
防止性組成物をつくり、樹脂封止型半導体装置の封止樹
脂表面に塗布硬化させ、また実施例１と同様に特性試験
を行ったので、その結果を第１表にしな、 いずれも本
発明の効果を確認することができた。Examples 2 to 5 An antistatic composition was prepared in the same manner as in Example 1 using the composition shown in Table 1, and applied and cured on the surface of the sealing resin of a resin-encapsulated semiconductor device, and in the same manner as in Example 1. The results are shown in Table 1, and the effects of the present invention were confirmed in all cases.
比較例 １
第１表に示した組成によって樹脂組成物をつくり、以下
実施例１と同様にして半導体装置の封止樹脂表面に塗布
硬化させ、また同様に試験を行ったので、その結果を第
１表に示しな。Comparative Example 1 A resin composition was prepared according to the composition shown in Table 1, and applied and cured on the surface of the sealing resin of a semiconductor device in the same manner as in Example 1. The test was also conducted in the same manner. Shown in Table 1.
「発明の効果コ
以上の説明および第１表から明らかなように、本発明の
帯電防止性組成物は、優れた帯電防止効果を有するため
、これを塗布することによって、静電気等の外部からの
微弱電流による半導体素子の破壊を防止し、封止後の後
工程による傷を防止することができ商品価値の低下を防
ぐことができる。``Effects of the Invention'' As is clear from the above explanation and Table 1, the antistatic composition of the present invention has an excellent antistatic effect, so by applying it, it can reduce external forces such as static electricity. It is possible to prevent semiconductor elements from being destroyed by weak currents, to prevent damage caused by post-processing after sealing, and to prevent a decrease in commercial value.
【図面の簡単な説明】
第１図は本発明の組成物を被覆形成した樹脂封止型半導
体装置の断面図、第２図は従来の樹脂封止型半導体装置
の断面図である。
１．１１・・・半導体素子搭載部、 ２．１２・・・半
導体素子、 ３．１３・・・リード端子、 ４，１４・
・・ボンディングワイヤ、 ５，１５・・・封止樹脂、
６・・・帯電防止性組成物、 ７．１６・・・接着剤。
特許出願人 東芝ケミカル株式会社
第１図
第２図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view of a resin-sealed semiconductor device coated with the composition of the present invention, and FIG. 2 is a sectional view of a conventional resin-sealed semiconductor device. 1.11...Semiconductor element mounting part, 2.12...Semiconductor element, 3.13...Lead terminal, 4,14.
...Bonding wire, 5,15...Sealing resin,
6...Antistatic composition, 7.16...Adhesive. Patent applicant: Toshiba Chemical Corporation Figure 1 Figure 2
Claims (1)
２０重量部を配合することを特徴とする半導体装置被覆
用の帯電防止性組成物。1 Antistatic agent 0.1 to 100 parts by weight of organic resin
An antistatic composition for coating a semiconductor device, characterized in that it contains 20 parts by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63080455A JPH01252667A (en) | 1988-04-01 | 1988-04-01 | Antistatic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63080455A JPH01252667A (en) | 1988-04-01 | 1988-04-01 | Antistatic composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01252667A true JPH01252667A (en) | 1989-10-09 |
Family
ID=13718734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63080455A Pending JPH01252667A (en) | 1988-04-01 | 1988-04-01 | Antistatic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01252667A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0536147A1 (en) * | 1990-06-25 | 1993-04-14 | Dow Chemical Co | Antistatic polyolefin foams and films and method of making the foam and antistatic composition. |
| EP0971000A1 (en) * | 1997-03-25 | 2000-01-12 | Tokyo Electron Limited | Electronic/electric components used in clean room and substrate treatment apparatus |
| JP2012186634A (en) * | 2011-03-04 | 2012-09-27 | Murata Mfg Co Ltd | Electronic component |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50740A (en) * | 1973-05-02 | 1975-01-07 | ||
| JPS5437A (en) * | 1977-06-03 | 1979-01-05 | Kohkoku Chem Ind | Antistatic coating composition |
| JPS5578072A (en) * | 1978-12-05 | 1980-06-12 | Toyo Tire & Rubber Co Ltd | Antistatic corrosion-resistant paint |
| JPS6041051B2 (en) * | 1975-11-03 | 1985-09-13 | リサ−チ コ−ポレ−シヨン | Peptide for regulating intestinal intrinsic motility |
| JPS6131476A (en) * | 1984-07-20 | 1986-02-13 | Sekisui Chem Co Ltd | Electrically conductive paint composition, and electrically conductive synthetic resin plate or sheet |
| JPS62112670A (en) * | 1985-11-11 | 1987-05-23 | Fujikura Ltd | Electrically conductive ultraviolet curing paint |
-
1988
- 1988-04-01 JP JP63080455A patent/JPH01252667A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50740A (en) * | 1973-05-02 | 1975-01-07 | ||
| JPS6041051B2 (en) * | 1975-11-03 | 1985-09-13 | リサ−チ コ−ポレ−シヨン | Peptide for regulating intestinal intrinsic motility |
| JPS5437A (en) * | 1977-06-03 | 1979-01-05 | Kohkoku Chem Ind | Antistatic coating composition |
| JPS5578072A (en) * | 1978-12-05 | 1980-06-12 | Toyo Tire & Rubber Co Ltd | Antistatic corrosion-resistant paint |
| JPS6131476A (en) * | 1984-07-20 | 1986-02-13 | Sekisui Chem Co Ltd | Electrically conductive paint composition, and electrically conductive synthetic resin plate or sheet |
| JPS62112670A (en) * | 1985-11-11 | 1987-05-23 | Fujikura Ltd | Electrically conductive ultraviolet curing paint |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0536147A1 (en) * | 1990-06-25 | 1993-04-14 | Dow Chemical Co | Antistatic polyolefin foams and films and method of making the foam and antistatic composition. |
| EP0971000A1 (en) * | 1997-03-25 | 2000-01-12 | Tokyo Electron Limited | Electronic/electric components used in clean room and substrate treatment apparatus |
| EP0971000A4 (en) * | 1997-03-25 | 2000-07-19 | Tokyo Electron Ltd | Electronic/electric components used in clean room and substrate treatment apparatus |
| US6337365B1 (en) | 1997-03-25 | 2002-01-08 | Tokyo Electron Limited | Electronic/electric components used in clean room and substrate treatment apparatus |
| JP2012186634A (en) * | 2011-03-04 | 2012-09-27 | Murata Mfg Co Ltd | Electronic component |
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