JPH01251672A - Photodiode for infrared ray detection - Google Patents
Photodiode for infrared ray detectionInfo
- Publication number
- JPH01251672A JPH01251672A JP63076079A JP7607988A JPH01251672A JP H01251672 A JPH01251672 A JP H01251672A JP 63076079 A JP63076079 A JP 63076079A JP 7607988 A JP7607988 A JP 7607988A JP H01251672 A JPH01251672 A JP H01251672A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forbidden band
- region
- cdte
- band semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title claims 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 229910004613 CdTe Inorganic materials 0.000 abstract description 14
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、赤外線を検出するフォトダイオードに関する
。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a photodiode that detects infrared rays.
（従来の技術）
従来の赤外線を検出するフォトダイオードの基本構成は
第２図に示す如くＰ形ＣｄＨｇＴｅ（以下ＣＭＴと略記
）基板８の表面上に、イオン注入法によりＮ頂域９を形
成したＰＮ接合をのダイオードである。この図にどいて
、１０はＩｎ信号電極。(Prior art) As shown in FIG. 2, the basic configuration of a conventional photodiode for detecting infrared rays is that an N top region 9 is formed on the surface of a P-type CdHgTe (hereinafter abbreviated as CMT) substrate 8 by ion implantation. It is a diode with a PN junction. In this figure, 10 is an In signal electrode.
１１ ハＡ ｕ ７− スｔｆｉＬ １２はパッジペー
ジ１ン用陽極硫化模（ＣｄＳ）、モして１３はＺｎＳ表
面医護模である。このフォトダイオードに表面から赤外
線が入射するとＣＭＴ中に電子正孔対が発生し、これら
が信号電荷として空乏１ｉｅＫ域を通過することにより
、外部へ信号電流が取出される。分光感度特性はＣＭＴ
の禁制帯曙、即ち結晶中のＨｇ組成比に依存する。11 is an anode sulfide pattern (CdS) for Pudge Page 1, and 13 is a ZnS surface medical protection pattern. When infrared rays are incident on this photodiode from the surface, electron-hole pairs are generated in the CMT, and these pass through the depletion 1ieK region as signal charges, whereby a signal current is taken out to the outside. Spectral sensitivity characteristics are CMT
The forbidden band depends on the Hg composition ratio in the crystal.
（発明が祥決しようとする課題）
第２図に示した従来の赤外線フォトダイオードは、以下
に述べるような問題点がある。まずＣＭＴ表面のパッジ
ページ１ンおよび保護層であるＣｄＳ模は、ダイオード
特性を左右する重要な部分であるが、形成条件に対する
制約が非常に厳しい。通常１易極硫化プロセスを最適化
して形成する。＠２に赤外線の入射方向が表面に限定さ
れている点である。理由はＣＭＴ結晶を薄くすることが
困難で。(Problems to be Solved by the Invention) The conventional infrared photodiode shown in FIG. 2 has the following problems. First, the pad page 1 on the surface of the CMT and the CdS pattern that is the protective layer are important parts that influence the diode characteristics, but there are very strict restrictions on the conditions for forming them. It is usually formed by optimizing the easy-to-use sulfurization process. @2 is that the direction of incidence of infrared rays is limited to the surface. The reason is that it is difficult to make CMT crystal thin.
裏面入射では信号キャリアが空乏層領域に到達できない
事、およびＡｕアース電極が赤外線と反射してしまうた
めである。したがって、Ｉｎ信号電極が赤外線を部分的
に阻止することを覚悟しつつ表面入射を選択せざるをえ
ない。This is because the signal carriers cannot reach the depletion layer region with backside incidence, and the Au ground electrode reflects infrared rays. Therefore, surface incidence must be selected while being prepared for the In signal electrode to partially block infrared rays.
本発明は上記のごとき問題を解決し、ダイオード表面の
パッジページ１ンと区画が容易で、かつ裏面入射が可能
な赤外線検知器用フォトダイオードを提供することを目
的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a photodiode for an infrared detector that can be easily divided into a pad page on the front surface of the diode and that can be illuminated from the back side.
（諌題を解決するための手段）
本発明にかかる赤外線検知器用フォトダイオードは、広
禁制帯半導体基板上ｌこ狭禁制帯半導体膜および広禁制
帯半導体ＷＩ膜を連続的φこエピタキシャルする。つづ
いてＰＮ接合頃領域形成後に最上１ｆｆｉをパッジペー
ジ１ン模で区画する。信号電極とアース電極は、広禁制
帯半導体模とパッジページ１ン模の両方あるいは片方を
部分的に除去してから形成する。(Means for Solving the Problem) In the photodiode for an infrared detector according to the present invention, a narrow bandgap semiconductor film and a wide bandgap semiconductor WI film are continuously epitaxially formed on a wide bandgap semiconductor substrate. Subsequently, after forming a region around the PN junction, the uppermost 1ffi is sectioned with a pad page 1 pattern. The signal electrode and the ground electrode are formed after partially removing both or one of the wide forbidden band semiconductor pattern and the pad page pattern.
（作用）
本発明によれば広禁制帯半導体膜とパッジページ１ン模
が、フォトダイオードの表面区画模として作用する。−
万、エピタキシャル基板は広禁制帯半導体であるので赤
外線吸収が小さい為、裏面入射が可能とある。(Function) According to the present invention, the wide bandgap semiconductor film and the pad page pattern function as surface partition patterns of the photodiode. −
Since the epitaxial substrate is a wide bandgap semiconductor, its infrared absorption is small, so backside incidence is possible.
（実施例）
本発明の実施例を第１図を用いて説明する。フォトダイ
オードを構成するウェーハは、ＣｄＴｅ広禁制帯半導体
基板１上に狭禁制帯半導体ＣＭＴ層（Ｐ型）２と広禁制
帯半導体ＣｄＴｅ薄摸層３を、連続的憂こエピタキシャ
ル成長させ″たものである。Ｎ領域４をイオン注入で形
成した後に、最上面をＺｎＳパッジページ１ン模５で１
４しであるうただし、 Ｉｎ信号電極６の領域はＺｎ
Ｓ模が、またＡｕアース電極７の領域はＺｎＳ模とＣｄ
Ｔｅ＠模が除去されている。信号電極領域のＣｄＴｅ薄
模を薄膜しない理由は、ＣｄＴｅ薄摸層がイオン注入で
低抵抗化すること、およびＰＮ接合頃領域プロセス中１
こ雰囲気にさらされることなく特性が安定するためであ
る。(Example) An example of the present invention will be described with reference to FIG. The wafer constituting the photodiode is one in which a narrow bandgap semiconductor CMT layer (P type) 2 and a wide bandgap semiconductor CdTe thin pattern layer 3 are continuously grown epitaxially on a CdTe wide bandgap semiconductor substrate 1. After forming N region 4 by ion implantation, the top surface is covered with ZnS pad page 1 pattern 5.
However, the region of the In signal electrode 6 is Zn.
The S pattern, and the area of the Au ground electrode 7 are the ZnS pattern and the Cd pattern.
Te@model has been removed. The reason why the CdTe thin layer in the signal electrode region is not made thin is that the resistance of the CdTe thin layer is lowered by ion implantation, and the reason is that the resistance of the CdTe thin layer is lowered by ion implantation, and that
This is because the characteristics are stabilized without being exposed to this atmosphere.
このような構造において、赤外線が裏面（ＣｄＴｅ基板
１側）から入射すると、赤外線はＣｄＴｅ基板を透過し
Ｐ梨ＣＭＴＩｍ２中で吸収される。ここで電子正孔対が
発生して、少数キャリアである電子がＰＮ接合領域（？
！乏層領域）へ流れ込む。信号電流はＩｎ電極を経て、
外部信号回路へ出力される。In such a structure, when infrared rays are incident from the back surface (CdTe substrate 1 side), the infrared rays are transmitted through the CdTe substrate and absorbed in the Pear CMTIm2. Electron-hole pairs are generated here, and electrons, which are minority carriers, are transferred to the PN junction (?
! flows into the depleted region). The signal current passes through the In electrode,
Output to external signal circuit.
本発明は、上記した実施例に限られるものではない。例
えば、広禁制帯半導体基板としてＣｄＴｅ以外憂こＧａ
Ａｓ、ＣｄＺｎＴｅ、ＺｎＴｅを、狭禁制帯半導体層と
してＣＭＴ以外にはＨｇＺｎＴｅを用いることが可能で
ある。また広禁制帯半導本薄模３として、ＣｄＴｅ以外
にＨｇｍ成比の小さいＣＭＴやＺｎＴｅｊｐ用いること
ができる。The present invention is not limited to the embodiments described above. For example, Ga other than CdTe can be used as a wide forbidden semiconductor substrate.
As, CdZnTe, and ZnTe can be used as the narrow bandgap semiconductor layer, and HgZnTe can be used other than CMT. In addition to CdTe, CMT or ZnTejp with a small Hgm ratio can be used as the wide forbidden semiconductor thin pattern 3.
本発明のフォトダイオード構造によれば、ダイオード長
面のパッジページ１ンと保護が容易で、かつ赤外線の裏
面入射が可能な赤外線フォトダイオードが得られる。According to the photodiode structure of the present invention, it is possible to obtain an infrared photodiode that is easy to protect due to the padding on the long side of the diode and allows infrared rays to be incident on the back side.
第１図は本発明の一実施例を説明するための断面構造図
を表す。第２図は、従来例を説明するための同様な図で
ある。
１・・・ＣｄＴｅ広禁制帯半導埠基板、２・・・ＣＭＴ
層、３・・・広禁制帯ＣｄＴａ薄模層薄膜・・・Ｎ領域
、５・・・ＺｎＳパッシベーション膜、６・・・Ｉｎ信
号電極、７・・・Ａｕアース電極。
代理人 弁理士 則 近 憲 借
間 松山光之FIG. 1 shows a cross-sectional structural diagram for explaining one embodiment of the present invention. FIG. 2 is a similar diagram for explaining a conventional example. 1...CdTe wide forbidden band semiconductor board, 2...CMT
Layer, 3... wide forbidden band CdTa thin layer thin film... N region, 5... ZnS passivation film, 6... In signal electrode, 7... Au ground electrode. Agent Patent attorney Nori Chika Rented room Mitsuyuki Matsuyama
Claims (1)
帯半導体基板上に、赤外光を吸収する狭禁制帯半導体膜
および表面を安定化する広禁制帯半導体薄膜を連続的に
エピタキシャル成長させたウェーハを用いて、ＰＮ接合
領域を形成した後に最上面をパッシベーション膜で保護
し、前記広禁制帯半導体薄膜とパッシベーション膜の両
方あるいは片方を部分的に除去してアース電極と信号電
極を配設したことを特徴とする赤外線検出用フォトダイ
オード。A narrow bandgap semiconductor film that absorbs infrared light and a wide bandgap semiconductor thin film that stabilizes the surface are epitaxially grown on a wide bandgap semiconductor substrate that transmits infrared light in the wavelength range targeted for detection. After forming a PN junction region using a wafer, the top surface is protected with a passivation film, and both or one of the wide forbidden semiconductor thin film and the passivation film is partially removed to provide a ground electrode and a signal electrode. A photodiode for infrared detection that is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63076079A JP2670289B2 (en) | 1988-03-31 | 1988-03-31 | Infrared detecting photodiode and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63076079A JP2670289B2 (en) | 1988-03-31 | 1988-03-31 | Infrared detecting photodiode and method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01251672A true JPH01251672A (en) | 1989-10-06 |
| JP2670289B2 JP2670289B2 (en) | 1997-10-29 |
Family
ID=13594808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63076079A Expired - Fee Related JP2670289B2 (en) | 1988-03-31 | 1988-03-31 | Infrared detecting photodiode and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2670289B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401986A (en) * | 1992-07-21 | 1995-03-28 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector with II-VI passivation layer |
| CN105576078A (en) * | 2015-12-29 | 2016-05-11 | 中国电子科技集团公司第十一研究所 | Preparation method of CdS-based schottky detector chip passivation film |
| CN113328005A (en) * | 2021-05-27 | 2021-08-31 | 中国科学技术大学 | Photoelectric detector and preparation method thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210133493A (en) | 2020-04-29 | 2021-11-08 | 삼성전자주식회사 | Sensor and electronic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246878A (en) * | 1988-03-28 | 1989-10-02 | Mitsubishi Electric Corp | Photodetecting element |
-
1988
- 1988-03-31 JP JP63076079A patent/JP2670289B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246878A (en) * | 1988-03-28 | 1989-10-02 | Mitsubishi Electric Corp | Photodetecting element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5401986A (en) * | 1992-07-21 | 1995-03-28 | Santa Barbara Research Center | Bake-stable HgCdTe photodetector with II-VI passivation layer |
| CN105576078A (en) * | 2015-12-29 | 2016-05-11 | 中国电子科技集团公司第十一研究所 | Preparation method of CdS-based schottky detector chip passivation film |
| CN113328005A (en) * | 2021-05-27 | 2021-08-31 | 中国科学技术大学 | Photoelectric detector and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2670289B2 (en) | 1997-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |